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from 1984 to 1996. In 1996 she returned to Japan as a professor in the
Hiroshima University Faculty of Engineering, taking a special appointment in 2015 with the HiSIM (Hiroshima-University STARC IGFET Model) Research Center.
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The
Physics and Modeling of MOSFETs: Surface-Potential Model HiSIM (with Hans Jürgen Mattausch and Tatsuya Ezaki, World Scientific, 2008)
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30:, born 1949) is a Japanese electronics engineer specializing in the design, modeling, and simulation of electronic components based on
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in 2007, "for contributions to nanoscale metal oxide semiconductor field effect transistor compact modeling".
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Miura-Mattausch has a doctorate from
Hiroshima University. She was a researcher in Germany at the
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94:(edited with Ludwig Treitinger, Springer, 1988)
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87:Miura-Mattausch is the author or editor of:
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271:Academic staff of Hiroshima University
171:, Hiroshima University, 10 March 2008
141:"Mentor Interview: Prof.Mitiko MIURA"
92:Ultra-Fast Silicon Bipolar Technology
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75:Miura-Mattausch was elected as an
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251:Japanese electronics engineers
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16:Japanese electronics engineer
147:, Hiroshima University, 2015
266:Hiroshima University alumni
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261:Women electrical engineers
62:from 1981 to 1984, and at
120:, German National Library
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256:Japanese women engineers
189:"Mitiko Miura-Mattausch"
165:"Professor Mitiko Miura"
46:. She is a professor at
117:Miura-Mattausch, Mitiko
214:IEEE Fellows directory
20:Mitiko Miura-Mattausch
54:Education and career
48:Hiroshima University
276:Fellows of the IEEE
38:and new models for
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145:Taoyaka Program
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32:semiconductors
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169:Research NOW
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241:1949 births
193:IEEE Xplore
77:IEEE Fellow
71:Recognition
40:transistors
235:Categories
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199:2024-08-31
175:2024-08-31
151:2024-08-31
124:2024-08-31
102:References
24:Japanese
64:Siemens
36:MOSFETs
217:, IEEE
195:, IEEE
83:Books
44:LDMOS
28:三浦 道子
42:in
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