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crystals he could alter the propensity of the electrons to move from low energy to high energy orbits, and vice versa, thus transforming the efficiency of laser light production. The genesis of the strained layer laser (aka strained quantum well laser). He did not patent the idea and so received no
346:, the first direct observations of scattering by the central cell potential of impurities, the proposal and experimental confirmation of intervalence band absorption as an important loss mechanism in semiconductor lasers and the prediction that the threshold current in a
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Fehse, R.; Tomic, S.; Adams, A. R.; Sweeney, S. J.; O'Reilly, E. P.; Andreev, A.; Riechert, H. (2002). "A quantitative study of radiative, Auger, and defect related recombination processes in 1.3-μm GaInNAs-based quantum-well lasers".
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338:, Professor Adams has done much to advance the use of strain as an important variable in understanding the basic physics of devices. His contributions include the first demonstration of the Gamma-L-X ordering of the
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can be greatly reduced if the wells are grown in a state of compressive stress. These latter ideas are currently being pursued vigorously around the world where they are resulting in lasers having greatly enhanced
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to study physics, in part because he didn't have the foreign language qualifications demanded by most other universities. He also completed his PhD at
Leicester with Professor
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Adams, A. R.; Asada, M.; Suematsu, Y.; Arai, S. (1980). "The
Temperature Dependence of the Efficiency and Threshold Current of In1-xGaxAsyP1-y
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Who's Who 2014, A & C Black, an imprint of
Bloomsbury Publishing plc, 2014; online edn, Oxford University Press
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exam he attended the local technical school where he represented
Southeast Essex at both football and cricket.
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208:. Most modern homes will have several of these devices in their homes in all types of electronic equipment.
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After returning to the
University of Surrey to continue research. While walking with his wife Helga on
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O'Reilly, E. P.; Adams, A. R. (1994). "Band-structure engineering in strained semiconductor lasers".
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Distinguished for his pioneering work on the application of high pressure techniques to the study of
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and his father was born with TB thus being excused from school on medical grounds, before working as
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in 1995, and elected as a Fellow of the Royal
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financial gain from a technology that is used in virtually every household in the world.
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and gym owner. Adams' mother left school at the age of 12. Adams was evacuated from
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Back in
Britain at the University of Surrey he conducted microwave research using
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494:"A catalyst to our digital world: strained quantum well lasers—Full Case Study"
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Since retirement from the
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Adams was born to a non-academic family. His grandmother had died from
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The electrical and optical properties of ortho-rhombic sulphur crystals
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crystals under high pressure. In 1980 he took a sabbatical to work on
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408:"EC/1996/01: Adams, Alfred Rodney: Library and Archive Catalogue"
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Biography from the
Department of Physics, University of Surrey
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for his pioneering work on strained-layer laser structures.
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for his pioneering work on strained-layer laser structures.
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IEEE Journal of Selected Topics in Quantum Electronics
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BBC Radio 4, The Life Scientific. Profile of Alf Adams
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in Germany, where he met and married his wife Helga.
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653:: A celebration of science in the UK, 5 July 2006
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330:. His nomination for the Royal Society reads:
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410:. London: The Royal Society. Archived from
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562:Related to Intervalence Band Absorption".
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19:For other people named Alfred Adams, see
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376:In March 2014 he was the subject of the
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1019:Alumni of the University of Leicester
989:Academics of the University of Surrey
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309:beach he realised that by straining
564:Japanese Journal of Applied Physics
525:IEEE Journal of Quantum Electronics
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280:Karlsruhe Institute of Technology
206:strained-layer quantum-well laser
119:Karlsruhe Institute of Technology
481:Cyprus University of Technology
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364:Rank Prize in Optoelectronics
300:Tokyo Institute of Technology
221:Rank Prize in Optoelectronics
124:Tokyo Institute of Technology
21:Alfred Adams (disambiguation)
994:Fellows of the Royal Society
461:"ADAMS, Prof. Alfred Rodney"
272:Orthorhombic crystal systems
83:Strained quantum-well lasers
1014:People from Hadleigh, Essex
953:Vernon Benjamin Mountcastle
362:In 2014 he was awarded the
322:In 1995 he was awarded the
193:Alfred ("Alf") Rodney Adams
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816:Francis Patrick McCormick
628:10.1109/JSTQE.2002.801684
200:(born 1939) is a British
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336:semiconducting materials
227:Early life and education
910:Grant Robert Sutherland
833:Stewart Crichton Miller
470:(subscription required)
324:Duddell Medal and Prize
264:University of Leicester
217:Duddell Medal and Prize
72:University of Leicester
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340:conduction band minima
878:Christopher Sachrajda
380:programme, Professor
276:postdoctoral research
968:Martin Schwarzschild
658:The Rank Prize Funds
584:10.1143/JJAP.19.L621
213:University of Surrey
114:University of Surrey
948:Jacques-Louis Lions
800:Martin Geoffrey Low
620:2002IJSTQ...8..801F
576:1980JaJAP..19L.621A
537:1994IJQE...30..366O
386:The Life Scientific
255:. After taking his
45:Alfred Rodney Adams
893:George D. W. Smith
775:Michael Denis Gale
750:Patrick J. Dowling
739:John Michael Brown
357:emeritus professor
348:quantum-well laser
318:Honours and awards
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920:Phillip V. Tobias
268:Walter Eric Spear
204:who invented the
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101:Scientific career
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262:He attended
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253:World War II
233:tuberculosis
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107:Institutions
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1004:1939 births
899:Edwin Smith
873:Martin Roth
868:Peter Pusey
805:Andrew Lyne
732:David Beach
498:SET squared
378:BBC Radio 4
367: [
307:Bournemouth
257:eleven-plus
983:Categories
795:David Lane
614:(4): 801.
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391:References
302:in Japan.
56:1939-11-11
770:Jim Feast
716:Alf Adams
249:The Blitz
202:physicist
32:Alf Adams
700:elected
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418:26 March
178:/physics
936:Foreign
709:Fellows
702:in 1996
696:of the
694:Fellows
616:Bibcode
572:Bibcode
533:Bibcode
508:2 April
247:during
237:cobbler
180:/people
167:Website
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560:Lasers
286:Career
184:_adams
172:surrey
145:(1964)
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134:Thesis
95:(1996)
89:Awards
588:S2CID
371:]
241:boxer
510:2015
420:2014
344:GaAs
182:/alf
50:Born
624:doi
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541:doi
384:'s
342:in
270:on
251:in
197:FRS
176:.uk
174:.ac
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