1068:: AlN 0.081 C/m > InN 0.032 C/m > GaN 0.029 C/m). Moreover, the piezoelectric nature of AlN gives rise to internal piezoelectric polarization charges under strain. These polarization effects can be utilized to induce a high density of free carriers at III-nitride semiconductor heterostructure interfaces completely dispensing with the need of intentional doping. Owing to the broken inversion symmetry along the polar direction, AlN thin film can be grown on either metal-polar or nitrogen-polar faces. Their bulk and surface properties depend significantly on this choice. The polarization effect is currently under investigation for both polarities.
1181:) and large thermal conductivity. This is due to its small atomic mass, strong interatomic bonds, and simple crystal structure. This property makes AlN attractive for application in high speed and high power communication networks. Many devices handle and manipulate large amounts of energy in small volumes and at high speeds, so due to the electrically insulating nature and high thermal conductivity of AlN, it becomes a potential material for high-power power electronics. Among group III-nitride materials, AlN has higher thermal conductivity compared to
314:
193:
729:
724:
734:
130:
123:
889:
63:
1338:(HEMTs) have attracted a high level of attention due to AlN’s superior properties, such as better thermal management, reduced buffer leakage, and excellent integration for all nitride electronics. AlN buffer layer is a critical building block for AlN-based HEMTs, and it has been grown by using MOCVD or MBE on different substrates. Building on top of AlN buffer, n-channel devices with
940:
1197:
even at room temperature, surface oxide layers of 5–10 nm thickness have been detected. This oxide layer protects the material up to 1,370 °C (1,640 K; 2,500 °F). Above this temperature bulk oxidation occurs. Aluminium nitride is stable in hydrogen and carbon-dioxide atmospheres up to 980 °C (1,250 K; 1,800 °F).
894:
1196:
Aluminium nitride is stable at high temperatures in inert atmospheres and melts at about 2,200 °C (2,470 K; 3,990 °F). In a vacuum, AlN decomposes at ~1,800 °C (2,070 K; 3,270 °F). In the air, surface oxidation occurs above 700 °C (973 K; 1,292 °F), and
1555:
Cheng, Zhe; Koh, Yee Rui; Mamun, Abdullah; Shi, Jingjing; Bai, Tingyu; Huynh, Kenny; Yates, Luke; Liu, Zeyu; Li, Ruiyang; Lee, Eungkyu; Liao, Michael E.; Wang, Yekan; Yu, Hsuan Ming; Kushimoto, Maki; Luo, Tengfei; Goorsky, Mark S.; Hopkins, Patrick E.; Amano, Hiroshi; Khan, Asif; Graham, Samuel
1063:
between aluminium and nitrogen atoms. Furthermore, the non-centrosymmetric wurtzite crystal structure gives rise to a net polarization along the c-axis. Compared with other III-nitride materials, AlN has a larger spontaneous polarization due to the higher nonideality of its crystal structure
54:
892:
742:
704:
1342:(2DEG) and p-channel devices with 2D hole gas (2DHG) have been demonstrated. The combination of high-density 2DEG and 2DHG on the same semiconductor platform makes it a potential candidate for CMOS devices.
1188:
Thermal expansivity is another critical property for high temperature applications. The calculated thermal expansion coefficients of AlN at 300 K are 4.2×10 Kalong a-axis and 5.3×10 K along c-axis.
1841:
Ambacher, O.; Foutz, B.; Smart, J.; Shealy, J. R.; Weimann, N. G.; Chu, K.; Murphy, M.; Sierakowski, A. J.; Schaff, W. J.; Eastman, L. F.; Dimitrov, R.; Mitchell, A.; Stutzmann, M. (2000-01-01).
2202:
Xiong, Chi; Pernice, Wolfram H. P.; Sun, Xiankai; Schuck, Carsten; Fong, King Y.; Tang, Hong X. (2012). "Aluminum nitride as a new material for chip-scale optomechanics and nonlinear optics".
1305:
AlN is also used to build piezoelectric micromachined ultrasound transducers, which emit and receive ultrasound and which can be used for in-air rangefinding over distances of up to a meter.
828:
2159:
Chih-ming Lin; Ting-ta Yen; Yun-ju Lai; Felmetsger, V. V.; Hopcroft, M. A.; Kuypers, J. H.; Pisano, A. P. (March 2010). "Temperature-compensated aluminum nitride lamb wave resonators".
1166:, high-quality MOCVD-grown AlN single crystal has an intrinsic thermal conductivity of 321 W/(m·K), consistent with a first-principle calculation. For an electrically insulating
893:
953:
820:
1059:
AlN is its spontaneous polarization. The origin of spontaneous polarization is the strong ionic character of chemical bonds in wurtzite AlN due to the large difference in
2263:
Yamakawa, Tomohiro; Tatami, Junichi; Wakihara, Toru; Komeya, Katsutoshi; Meguro, Takeshi; MacKenzie, Kenneth J. D.; Takagi, Shinichi; Yokouchi, Masahiro (2005-10-04).
1312:. AlN nanotubes as inorganic quasi-one-dimensional nanotubes, which are isoelectronic with carbon nanotubes, have been suggested as chemical sensors for toxic gases.
895:
1052:
at high pressures. In AlN wurtzite crystal structure, Al and N alternate along the c-axis, and each bond is tetrahedrally coordinated with four atoms per unit cell.
1212:
through attack on the aluminium-nitride grains. The material hydrolyzes slowly in water. Aluminium nitride is resistant to attack from most molten salts, including
2605:
1290:
have permitted the deposition of piezoelectric AlN films on polymeric substrates, thus enabling the development of flexible SAW devices. One application is an
363:
2426:
Ahmadi, A.; Hadipour, N. L.; Kamfiroozi, M.; Bagheri, Z. (2012). "Theoretical study of aluminium nitride nanotubes for chemical sensing of formaldehyde".
3078:
2674:
1890:
Hickman, Austin Lee; Chaudhuri, Reet; Bader, Samuel James; Nomoto, Kazuki; Li, Lei; Hwang, James C M; Grace Xing, Huili; Jena, Debdeep (2021-04-01).
824:
4778:
1536:
917:
2560:
2086:
1673:
1628:
Vandamme, Nobuko S.; Richard, Sarah M.; Winzer, Stephen R. (1989). "Liquid-Phase
Sintering of Aluminum Nitride by Europium Oxide Additives".
651:
2461:
Ahmadi
Peyghan, A.; Omidvar, A.; Hadipour, N. L.; Bagheri, Z.; Kamfiroozi, M. (2012). "Can aluminum nitride nanotubes detect the toxic NH
2350:
1185:(GaN). Therefore, AlN is more advantageous than GaN in terms of heat dissipation in many power and radio frequency electronic devices.
3477:
1843:"Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures"
2598:
2574:
1335:
1295:
328:
1048:
phase, which is synthesized primarily in the form of thin films. It is predicted that the cubic phase of AlN (zb-AlN) can exhibit
4788:
4768:
3102:
1666:
Aluminium nitride based functional materials, prepared from nano/micron-sized powders via hot pressing/pressureless sintering
1299:
1045:
4773:
3388:
3146:
808:
473:
960:
4763:
2591:
1339:
1308:
Metallization methods are available to allow AlN to be used in electronics applications similar to those of alumina and
1041:
995:
786:
271:
733:
728:
3367:
2777:
2501:
2393:
292:
860:
723:
4147:
3839:
3173:
3126:
1424:
1557:
3333:
3053:
2909:
1457:
Fukumoto, S.; Hookabe, T.; Tsubakino, H. (2010). "Hydrolysis behavior of aluminum nitride in various solutions".
1324:
903:
774:
200:
53:
1947:
Xu, Runjie Lily; Muñoz Rojo, Miguel; Islam, S. M.; Sood, Aditya; Vareskic, Bozo; Katre, Ankita; Mingo, Natalio;
1170:, it is 70–210 W/(m·K) for polycrystalline material, and as high as 285 W/(m·K) for single crystals).
4783:
3889:
3733:
3650:
3350:
3201:
2368:
2310:"Recent Progress in Polymeric Flexible Surface Acoustic Wave Devices: Materials, Processing, and Applications"
848:
844:
4616:
2929:
2657:
1291:
1205:
1022:
836:
812:
188:
4485:
4002:
3835:
3470:
3058:
2712:
2638:
2633:
1240:
627:
4465:
4138:
4716:
4025:
3720:
2875:
2850:
2741:
2628:
1530:
1275:
756:
716:
591:
4265:
4090:
2264:
2369:"ACPF-7001: Agilent Technologies Announces FBAR Filter for U.S. PCS Band Mobile Phones and Data Cards"
4675:
4591:
4423:
4180:
3916:
3746:
3313:
2904:
2867:
2643:
2513:
2474:
2435:
2221:
2115:
2033:
1978:
1903:
1854:
1579:
1510:
1419:
1404:
1328:
1316:
1163:
1071:
Critical spontaneous and piezoelectric polarization constants for AlN are listed in the table below:
1026:
991:
832:
491:
32:
4362:
4079:
4068:
3455:
4161:
3636:
3009:
2941:
2896:
2891:
2859:
2842:
2826:
2720:
2614:
1394:
1279:
1034:
309:
89:
4626:
4601:
4323:
4244:
3876:
3872:
3277:
3033:
3021:
2997:
2785:
2769:
2736:
2704:
2648:
2537:
2245:
2211:
2184:
2141:
2002:
1968:
1948:
1929:
1823:
1795:
1595:
1569:
1474:
1399:
1247:
in the presence of gaseous nitrogen or ammonia or by direct nitridation of aluminium. The use of
796:
3417:
2078:
792:
1173:
AlN is one of the few materials that have both a wide and direct bandgap (almost twice that of
804:
778:
4758:
4706:
4701:
4696:
4646:
4596:
4581:
4308:
4234:
4200:
4120:
4036:
3944:
3785:
3587:
3463:
3293:
3244:
3224:
3041:
2981:
2969:
2814:
2793:
2761:
2753:
2570:
2529:
2331:
2284:
2237:
2176:
2133:
2082:
2051:
1994:
1921:
1872:
1815:
1773:
1669:
1287:
1228:
1060:
1049:
678:
507:
481:
39:
4680:
4611:
4606:
4418:
4413:
4397:
4392:
4303:
4142:
4133:
4021:
4016:
3998:
3993:
3934:
3852:
3755:
3551:
2801:
2521:
2482:
2443:
2321:
2276:
2265:"Synthesis of AlN Nanopowder from γ-Al2O3 by Reduction-Nitridation in a Mixture of NH3-C3H8"
2229:
2168:
2123:
2119:
2041:
1986:
1911:
1862:
1807:
1763:
1702:
1637:
1587:
1518:
1466:
1366:
1007:
553:
446:
391:
1725:
840:
280:
170:
99:
4659:
4641:
4631:
4621:
4478:
4451:
4281:
4239:
4229:
4213:
4115:
3964:
3954:
3830:
3817:
3798:
3600:
3567:
3534:
3528:
2957:
2667:
1409:
1320:
1309:
1244:
1182:
1178:
1174:
816:
219:
2517:
2478:
2439:
2233:
2225:
2128:
2103:
2037:
1982:
1907:
1858:
1583:
1514:
856:
313:
192:
150:
4711:
4636:
4586:
4504:
4342:
4295:
4270:
4190:
3925:
3902:
3857:
3765:
3710:
3690:
3664:
3524:
3189:
2071:
1641:
1414:
1003:
931:
545:
1811:
1591:
1327:, wavelengths as short as 250 nm have been achieved. In 2006, an inefficient AlN
4752:
4352:
4171:
4052:
3977:
3618:
3614:
3577:
2408:
2280:
2249:
2145:
1933:
1827:
1599:
1389:
1376:
1283:
608:
435:
181:
2188:
2006:
1478:
868:
4375:
4333:
4101:
3775:
2541:
1957:"Thermal conductivity of crystalline AlN and the influence of atomic-scale defects"
1750:
Dancy, G. Selva; Sheeba, V. Benaline; Louis, C. Nirmala; Amalraj, A. (2015-09-30).
1201:
800:
574:
1956:
1355:
electronic substrates, chip carriers where high thermal conductivity is essential,
1259:
or CaO, and hot pressing is required to produce a dense technical-grade material.
244:
62:
2486:
1892:"Next generation electronics on the ultrawide-bandgap aluminum nitride platform"
770:
521:
17:
2502:"An Aluminium Nitride Light-Emitting Diode with a Wavelength of 210 Nanometres"
1916:
1891:
1522:
1501:
Feneberg, M.; Leute, R. A. R.; Neuschl, B.; Thonke, K.; Bickermann, M. (2010).
852:
3705:
3680:
2447:
1768:
1751:
1691:"Ueber das Stickstoffmagnesium und die Affinitäten des Stickgases zu Metallen"
1470:
457:
407:
161:
2335:
2288:
2241:
2137:
2104:"Wear characteristics of Al-AlN composites produced in-situ by nitrogenation"
2055:
1998:
1925:
1876:
1819:
1777:
1706:
766:
3511:
2566:
2172:
1271:
1248:
987:
976:
2533:
2326:
2309:
2180:
1952:
1362:
1217:
1213:
1056:
999:
979:
916:
909:
902:
875:
513:
467:
2525:
2102:
Pradhan, S; Jena, S K; Patnaik, S C; Swain, P K; Majhi, J (2015-02-19).
1752:"Superconductivity in Group III-V Semiconductor AlN Under High Pressure"
1558:"Experimental observation of high intrinsic thermal conductivity of AlN"
1302:
device that uses aluminium nitride sandwiched between two metal layers.
462:
insoluble, subject of hydrolysis in water solutions of bases and acids
3502:
3487:
1267:
1167:
983:
425:
231:
201:
2583:
2161:
IEEE Transactions on
Ultrasonics, Ferroelectrics and Frequency Control
1990:
1075:
Critical spontaneous and piezoelectric polarization constants for AlN
762:
3623:
2046:
2021:
1867:
1842:
1209:
1002:
of ~6 eV at room temperature and has a potential application in
1690:
930:
Except where otherwise noted, data are given for materials in their
1973:
1574:
2216:
1664:
Fesenko I. P.; Prokopiv M. M.; Chasnyk V. I.; et al. (2015).
1372:
255:
141:
129:
122:
112:
1762:(3). Instituto de Quimica - Univ. Federal do Mato Grosso do Sul.
1018:
AlN was first synthesized in 1862 by F. Briegleb and A. Geuther.
910:
3165:
864:
3459:
2587:
994:
of up to 321 W/(m·K) and is an electrical insulator. Its
297:
1025:
of 10–10 Ω⋅cm, rising to 10–10 Ω⋅cm when doped.
887:
2108:
IOP Conference Series: Materials
Science and Engineering
948:
3217:
3164:
2729:
2697:
2666:
2621:
2351:"Apple, Samsung Cellphone Filter Orders Lift Avago"
1044:crystal structure, but also has a metastable cubic
2070:
1294:, widely used in mobile phones, which is called a
1315:Currently there is much research into developing
452:hydrolyses (powder), insoluble (monocrystalline)
2022:"Thermal expansion of some diamondlike crystals"
243:
1796:"Growth and applications of Group III-nitrides"
1040:The material exists primarily in the hexagonal
891:
98:
3471:
2599:
2413:International Solid State Circuits Conference
2020:Slack, Glen A.; Bartram, S. F. (1975-01-01).
1756:Orbital - the Electronic Journal of Chemistry
8:
1223:Aluminium nitride can be patterned with a Cl
440:2,500 °C (4,530 °F; 2,770 K)
1732:. Sankt-Peterburg: FTI im. A. F. Ioffe, RAN
1352:dielectric layers in optical storage media,
3478:
3464:
3456:
3161:
2663:
2606:
2592:
2584:
1323:based semiconductors and, using the alloy
1274:crystalline aluminium nitride is used for
1055:One of the unique intrinsic properties of
312:
191:
169:
45:
31:"AlN" redirects here. For other uses, see
2325:
2215:
2127:
2045:
1972:
1915:
1866:
1767:
1573:
279:
4511:
4507:
4468:
4458:
4454:
4406:
4402:
4382:
4378:
4369:
4365:
4355:
4336:
4326:
4315:
4311:
4288:
4284:
4273:
4248:
4220:
4216:
4207:
4203:
4193:
4174:
4164:
4154:
4150:
4127:
4123:
4108:
4104:
4093:
4082:
4071:
4028:
4009:
4005:
3984:
3980:
3971:
3967:
3957:
3947:
3928:
3919:
3909:
3905:
3896:
3892:
3883:
3879:
3846:
3842:
3824:
3820:
3805:
3801:
3792:
3788:
3778:
3768:
3749:
3740:
3736:
3727:
3723:
3713:
3683:
3658:
3654:
3644:
3640:
3630:
3626:
3607:
3603:
3594:
3590:
3580:
3570:
3558:
3554:
3537:
3518:
3514:
3505:
3153:
3149:
2394:"A Gestural Interface for Smart Watches"
1720:
1718:
1716:
1550:
1548:
1546:
1073:
1021:AlN, in the pure (undoped) state has an
2269:Journal of the American Ceramic Society
1630:Journal of the American Ceramic Society
1437:
368:
333:
308:
3546:
3486:Salts and covalent derivatives of the
1528:
1331:emission at 210 nm was reported.
182:
4570:
2562:CRC Handbook of Chemistry and Physics
1800:Journal of Physics D: Applied Physics
1789:
1787:
1443:
1441:
340:Key: PIGFYZPCRLYGLF-UHFFFAOYSA-N
149:
7:
3498:
1951:; Xing, Huili Grace; Jena, Debdeep;
1896:Semiconductor Science and Technology
1319:to operate in the ultraviolet using
1278:sensors (SAWs) deposited on silicon
2409:"3D Ultrasonic Gesture Recognition"
2375:. EN-Genius Network Ltd. 2002-05-27
2308:Lamanna, Leonardo (November 2023).
1535:: CS1 maint: untitled periodical (
1286:properties. Recent advancements in
350:Key: PIGFYZPCRLYGLF-PXKYIXAJAH
234:
2500:Taniyasu, Y.; et al. (2006).
2415:. San Francisco. pp. 210–211.
1689:Briegleb, F.; Geuther, A. (1862).
1642:10.1111/j.1151-2916.1989.tb07662.x
1345:Among the applications of AlN are
1336:high electron mobility transistors
371:147238((4)6)456(6)7878(69)54732819
25:
2428:Sensors and Actuators B: Chemical
1695:Justus Liebigs Annalen der Chemie
1592:10.1103/PhysRevMaterials.4.044602
1296:thin-film bulk acoustic resonator
1200:The material dissolves slowly in
1192:Stability and chemical properties
397:
2559:Haynes, William M., ed. (2016).
2281:10.1111/j.1551-2916.2005.00693.x
938:
732:
727:
722:
400:
376:1(6)723(95)184556787854(94)73428
61:
52:
2314:Advanced Materials Technologies
1014:History and physical properties
934:(at 25 °C , 100 kPa).
4779:Light-emitting diode materials
3218:Organoaluminium(III) compounds
1:
2407:Przybyla, R.; al, et (2014).
2349:Tsuruoka, Doug (2014-03-17).
2234:10.1088/1367-2630/14/9/095014
2129:10.1088/1757-899X/75/1/012034
1029:occurs at a field of 1.2–1.8
2487:10.1016/j.physe.2012.02.018
1812:10.1088/0022-3727/31/20/001
420:white to pale-yellow solid
4805:
4572:
2026:Journal of Applied Physics
1961:Journal of Applied Physics
1847:Journal of Applied Physics
1794:Ambacher, O (1998-10-21).
1523:10.1103/physrevb.82.075208
1425:Titanium aluminium nitride
1239:AlN is synthesized by the
412:40.989 g/mol
29:
3548:
3495:
2448:10.1016/j.snb.2011.12.001
2355:Investor's Business Daily
1769:10.17807/orbital.v7i3.628
1726:"AlN – Aluminium Nitride"
1668:. EPC ALCON. p. 11.
1562:Physical Review Materials
1325:aluminium gallium nitride
928:
703:
698:
601:
563: = 0.31117 nm,
500:
384:
359:
324:
82:
74:
69:
60:
51:
1917:10.1088/1361-6641/abe5fd
1707:10.1002/jlac.18621230212
787:Precautionary statements
38:Not to be confused with
4789:Wurtzite structure type
4769:Piezoelectric materials
2173:10.1109/TUFFC.2010.1443
2120:2015MS&E...75a2034P
2073:Semiconductor Materials
1471:10.1023/A:1004718329003
1023:electrical conductivity
567: = 0.49788 nm
2327:10.1002/admt.202300362
2204:New Journal of Physics
2077:. CRC Press. pp.
2069:Berger, L. I. (1997).
1358:military applications,
1241:carbothermal reduction
898:
347:InChI=1/Al.N/rAlN/c1-2
1317:light-emitting diodes
1276:surface acoustic wave
1206:grain-boundary attack
897:
592:Coordination geometry
4774:III-V semiconductors
1420:Aluminium oxynitride
1405:Aluminium antimonide
1365:to grow crystals of
1164:thermal conductivity
1027:Electrical breakdown
998:phase (w-AlN) has a
992:thermal conductivity
880:(fire diamond)
492:Thermal conductivity
33:Aln (disambiguation)
4764:Aluminium compounds
2615:Aluminium compounds
2526:10.1038/nature04760
2518:2006Natur.441..325T
2479:2012PhyE...44.1357A
2440:2012SeAcB.161.1025A
2226:2012NJPh...14i5014X
2038:1975JAP....46...89S
1983:2019JAP...126r5105X
1949:Goodson, Kenneth E.
1908:2021SeScT..36d4001H
1859:2000JAP....87..334A
1584:2020PhRvM...4d4602C
1515:2010PhRvB..82g5208F
1395:Aluminium phosphide
1076:
1035:dielectric strength
447:Solubility in water
48:
27:Nitride of aluminum
2473:(7–8): 1357–1360.
1400:Aluminium arsenide
1298:(FBAR). This is a
1074:
961:Infobox references
899:
47:Aluminium nitride
46:
4743:
4742:
4737:
4736:
3453:
3452:
3449:
3448:
2693:
2692:
2565:(97th ed.).
2512:(7091): 325–328.
2088:978-0-8493-8912-2
1991:10.1063/1.5097172
1806:(20): 2653–2710.
1675:978-966-8449-53-6
1618:Haynes, p. 12.80.
1491:Haynes, p. 12.85.
1465:(11): 2743–2748.
1349:opto-electronics,
1282:because of AlN's
1229:reactive ion etch
1160:
1159:
1061:electronegativity
1050:superconductivity
973:Aluminium nitride
969:Chemical compound
967:
966:
757:Hazard statements
679:Gibbs free energy
508:Crystal structure
482:Electron mobility
293:CompTox Dashboard
131:Interactive image
124:Interactive image
40:Aluminium nitrate
16:(Redirected from
4796:
4691:
4685:
4670:
4664:
4514:
4472:
4461:
4434:
4428:
4409:
4385:
4372:
4358:
4339:
4330:
4318:
4291:
4277:
4252:
4223:
4210:
4196:
4177:
4168:
4157:
4130:
4111:
4097:
4086:
4075:
4063:
4057:
4047:
4041:
4032:
4012:
3987:
3974:
3960:
3951:
3931:
3922:
3912:
3899:
3886:
3868:
3862:
3849:
3827:
3808:
3795:
3781:
3772:
3752:
3743:
3730:
3717:
3701:
3695:
3686:
3675:
3669:
3661:
3647:
3633:
3610:
3597:
3583:
3574:
3561:
3541:
3531:
3521:
3508:
3499:
3480:
3473:
3466:
3457:
3273:
3272:
3271:
3263:
3262:
3254:
3253:
3162:
3156:
2664:
2608:
2601:
2594:
2585:
2580:
2569:. p. 4.45.
2546:
2545:
2497:
2491:
2490:
2458:
2452:
2451:
2434:(1): 1025–1029.
2423:
2417:
2416:
2404:
2398:
2397:
2390:
2384:
2383:
2381:
2380:
2365:
2359:
2358:
2346:
2340:
2339:
2329:
2305:
2299:
2298:
2296:
2295:
2260:
2254:
2253:
2219:
2199:
2193:
2192:
2156:
2150:
2149:
2131:
2099:
2093:
2092:
2076:
2066:
2060:
2059:
2049:
2047:10.1063/1.321373
2017:
2011:
2010:
1976:
1944:
1938:
1937:
1919:
1887:
1881:
1880:
1870:
1868:10.1063/1.371866
1838:
1832:
1831:
1791:
1782:
1781:
1771:
1747:
1741:
1740:
1738:
1737:
1722:
1711:
1710:
1686:
1680:
1679:
1661:
1655:
1652:
1646:
1645:
1636:(8): 1409–1414.
1625:
1619:
1616:
1610:
1609:
1607:
1606:
1577:
1552:
1541:
1540:
1534:
1526:
1498:
1492:
1489:
1483:
1482:
1454:
1448:
1447:Haynes, p. 4.45.
1445:
1427:, TiAlN or AlTiN
1367:gallium arsenide
1288:material science
1077:
1032:
1008:deep ultraviolet
990:. It has a high
951:
945:
942:
941:
919:
912:
905:
890:
870:
866:
862:
858:
854:
850:
846:
842:
838:
834:
830:
826:
822:
818:
814:
810:
806:
802:
798:
794:
780:
776:
772:
768:
764:
736:
731:
726:
690:
668:
641:
617:
602:Thermochemistry
554:Lattice constant
402:
399:
392:Chemical formula
317:
316:
301:
299:
283:
247:
236:
220:Gmelin Reference
203:
195:
184:
173:
153:
133:
126:
102:
65:
56:
49:
43:
36:
21:
18:Aluminum nitride
4804:
4803:
4799:
4798:
4797:
4795:
4794:
4793:
4784:III-V compounds
4749:
4748:
4746:
4744:
4739:
4738:
4692:
4689:
4686:
4683:
4671:
4668:
4665:
4662:
4513:
4509:
4505:
4470:
4466:
4460:
4456:
4452:
4435:
4432:
4429:
4426:
4408:
4404:
4400:
4399:
4384:
4380:
4376:
4374:
4371:
4367:
4363:
4357:
4353:
4341:
4338:
4334:
4332:
4328:
4324:
4317:
4313:
4309:
4290:
4286:
4282:
4275:
4271:
4250:
4246:
4222:
4218:
4214:
4212:
4209:
4205:
4201:
4195:
4191:
4179:
4176:
4172:
4170:
4166:
4162:
4156:
4152:
4148:
4141:
4132:
4129:
4125:
4121:
4110:
4106:
4102:
4095:
4091:
4084:
4080:
4073:
4069:
4064:
4061:
4058:
4055:
4048:
4045:
4042:
4039:
4030:
4026:
4024:
4011:
4007:
4003:
4001:
3986:
3982:
3978:
3976:
3973:
3969:
3965:
3959:
3955:
3953:
3949:
3945:
3933:
3930:
3926:
3924:
3921:
3917:
3911:
3907:
3903:
3901:
3898:
3894:
3890:
3888:
3885:
3881:
3877:
3875:
3871:
3869:
3866:
3863:
3860:
3851:
3848:
3844:
3840:
3838:
3829:
3826:
3822:
3818:
3807:
3803:
3799:
3797:
3794:
3790:
3786:
3780:
3776:
3774:
3770:
3766:
3754:
3751:
3747:
3745:
3742:
3738:
3734:
3732:
3729:
3725:
3721:
3719:
3715:
3711:
3704:
3702:
3699:
3696:
3693:
3685:
3681:
3676:
3673:
3670:
3667:
3663:
3660:
3656:
3652:
3649:
3646:
3642:
3638:
3635:
3632:
3628:
3624:
3617:
3609:
3605:
3601:
3599:
3596:
3592:
3588:
3582:
3578:
3576:
3572:
3568:
3560:
3556:
3552:
3539:
3535:
3533:
3529:
3527:
3523:
3520:
3516:
3512:
3510:
3507:
3503:
3491:
3484:
3454:
3445:
3441:
3437:
3433:
3429:
3425:
3421:
3412:
3408:
3404:
3400:
3396:
3392:
3383:
3379:
3375:
3371:
3362:
3358:
3354:
3345:
3341:
3337:
3329:
3325:
3321:
3317:
3309:
3305:
3301:
3297:
3289:
3285:
3281:
3270:
3267:
3266:
3265:
3261:
3258:
3257:
3256:
3252:
3249:
3248:
3247:
3245:
3240:
3236:
3232:
3228:
3213:
3209:
3205:
3197:
3193:
3185:
3181:
3177:
3160:
3155:
3151:
3147:
3142:
3138:
3134:
3130:
3122:
3118:
3114:
3110:
3106:
3098:
3094:
3090:
3086:
3082:
3074:
3070:
3066:
3062:
3049:
3045:
3037:
3029:
3025:
3017:
3013:
3005:
3001:
2993:
2989:
2985:
2977:
2973:
2965:
2961:
2953:
2949:
2945:
2937:
2933:
2925:
2921:
2917:
2913:
2900:
2887:
2883:
2879:
2871:
2863:
2854:
2846:
2838:
2834:
2830:
2822:
2818:
2805:
2797:
2789:
2781:
2773:
2765:
2757:
2749:
2745:
2725:
2716:
2708:
2689:
2686:
2682:
2678:
2668:Organoaluminium
2662:
2652:
2617:
2612:
2577:
2558:
2555:
2550:
2549:
2499:
2498:
2494:
2464:
2460:
2459:
2455:
2425:
2424:
2420:
2406:
2405:
2401:
2392:
2391:
2387:
2378:
2376:
2367:
2366:
2362:
2348:
2347:
2343:
2307:
2306:
2302:
2293:
2291:
2262:
2261:
2257:
2201:
2200:
2196:
2158:
2157:
2153:
2101:
2100:
2096:
2089:
2068:
2067:
2063:
2019:
2018:
2014:
1946:
1945:
1941:
1889:
1888:
1884:
1840:
1839:
1835:
1793:
1792:
1785:
1749:
1748:
1744:
1735:
1733:
1724:
1723:
1714:
1688:
1687:
1683:
1676:
1663:
1662:
1658:
1654:Haynes, p. 5.4.
1653:
1649:
1627:
1626:
1622:
1617:
1613:
1604:
1602:
1554:
1553:
1544:
1527:
1500:
1499:
1495:
1490:
1486:
1459:J. Mat. Science
1456:
1455:
1451:
1446:
1439:
1434:
1410:Gallium nitride
1386:
1340:2D electron gas
1321:gallium nitride
1310:beryllium oxide
1265:
1258:
1254:
1251:aids, such as Y
1245:aluminium oxide
1237:
1226:
1194:
1183:gallium nitride
1130:
1121:
1112:
1103:
1094:
1085:
1067:
1030:
1016:
1004:optoelectronics
970:
963:
958:
957:
956: ?)
947:
943:
939:
935:
924:
923:
922:
921:
914:
907:
900:
896:
888:
789:
759:
745:
719:
691:
685:
681:
669:
666:
660:
656:
653:
652:Std enthalpy of
645:20.2 J/(mol·K)
642:
639:
632:
629:
621:30.1 J/(mol·K)
618:
611:
594:
582:
568:
556:
540:
532:
524:
510:
449:
394:
380:
377:
372:
367:
366:
355:
352:
351:
348:
342:
341:
338:
332:
331:
320:
302:
295:
286:
266:
250:
237:
222:
213:
176:
156:
136:
116:
105:
92:
78:
44:
37:
30:
28:
23:
22:
15:
12:
11:
5:
4802:
4800:
4792:
4791:
4786:
4781:
4776:
4771:
4766:
4761:
4751:
4750:
4741:
4740:
4735:
4734:
4731:
4728:
4725:
4722:
4719:
4714:
4709:
4704:
4699:
4694:
4688:
4682:
4678:
4673:
4667:
4661:
4657:
4654:
4650:
4649:
4644:
4639:
4634:
4629:
4624:
4619:
4614:
4609:
4604:
4599:
4594:
4589:
4584:
4579:
4575:
4574:
4571:
4568:
4567:
4564:
4561:
4558:
4555:
4552:
4549:
4546:
4543:
4540:
4537:
4534:
4531:
4528:
4525:
4522:
4519:
4516:
4502:
4498:
4497:
4494:
4491:
4488:
4483:
4474:
4463:
4449:
4446:
4443:
4440:
4437:
4431:
4425:
4421:
4416:
4411:
4395:
4390:
4387:
4360:
4349:
4348:
4345:
4321:
4306:
4301:
4298:
4293:
4279:
4268:
4263:
4260:
4257:
4254:
4242:
4237:
4232:
4227:
4225:
4198:
4187:
4186:
4183:
4159:
4145:
4136:
4118:
4113:
4099:
4088:
4077:
4066:
4060:
4054:
4050:
4044:
4038:
4034:
4019:
4014:
3996:
3991:
3989:
3962:
3941:
3940:
3937:
3914:
3865:
3859:
3855:
3833:
3815:
3810:
3783:
3762:
3761:
3758:
3708:
3698:
3692:
3688:
3678:
3672:
3666:
3621:
3612:
3585:
3564:
3563:
3549:
3547:
3545:
3543:
3497:
3496:
3493:
3492:
3485:
3483:
3482:
3475:
3468:
3460:
3451:
3450:
3447:
3446:
3444:
3443:
3439:
3435:
3431:
3427:
3423:
3419:
3415:
3410:
3406:
3402:
3398:
3394:
3390:
3386:
3381:
3377:
3373:
3369:
3365:
3360:
3356:
3352:
3348:
3343:
3339:
3335:
3331:
3327:
3323:
3319:
3315:
3311:
3307:
3303:
3299:
3295:
3291:
3287:
3283:
3279:
3275:
3268:
3259:
3250:
3242:
3238:
3234:
3230:
3226:
3221:
3219:
3215:
3214:
3212:
3211:
3207:
3203:
3199:
3195:
3191:
3187:
3183:
3179:
3175:
3170:
3168:
3159:
3158:
3144:
3140:
3136:
3132:
3128:
3124:
3120:
3116:
3112:
3108:
3104:
3100:
3096:
3092:
3088:
3084:
3080:
3076:
3072:
3068:
3064:
3060:
3056:
3051:
3047:
3043:
3039:
3035:
3031:
3027:
3023:
3019:
3015:
3011:
3007:
3003:
2999:
2995:
2991:
2987:
2983:
2979:
2975:
2971:
2967:
2963:
2959:
2955:
2951:
2947:
2943:
2939:
2935:
2931:
2927:
2923:
2919:
2915:
2911:
2907:
2902:
2898:
2894:
2889:
2885:
2881:
2877:
2873:
2869:
2865:
2861:
2857:
2852:
2848:
2844:
2840:
2836:
2832:
2828:
2824:
2820:
2816:
2812:
2807:
2803:
2799:
2795:
2791:
2787:
2783:
2779:
2775:
2771:
2767:
2763:
2759:
2755:
2751:
2747:
2743:
2739:
2733:
2731:
2727:
2726:
2724:
2723:
2718:
2714:
2710:
2706:
2701:
2699:
2695:
2694:
2691:
2690:
2684:
2680:
2676:
2673:
2671:
2661:
2660:
2655:
2650:
2646:
2641:
2636:
2631:
2625:
2623:
2619:
2618:
2613:
2611:
2610:
2603:
2596:
2588:
2582:
2581:
2575:
2554:
2551:
2548:
2547:
2492:
2462:
2453:
2418:
2399:
2385:
2360:
2341:
2300:
2275:(1): 171–175.
2255:
2194:
2167:(3): 524–532.
2151:
2094:
2087:
2061:
2012:
1967:(18): 185105.
1955:(2019-11-14).
1939:
1882:
1853:(1): 334–344.
1833:
1783:
1742:
1730:Ioffe Database
1712:
1701:(2): 228–241.
1681:
1674:
1656:
1647:
1620:
1611:
1542:
1493:
1484:
1449:
1436:
1435:
1433:
1430:
1429:
1428:
1422:
1417:
1415:Indium nitride
1412:
1407:
1402:
1397:
1392:
1385:
1382:
1381:
1380:
1379:manufacturing.
1370:
1359:
1356:
1353:
1350:
1264:
1261:
1256:
1252:
1236:
1233:
1224:
1208:and in strong
1193:
1190:
1158:
1157:
1154:
1151:
1148:
1145:
1142:
1139:
1135:
1134:
1128:
1125:
1119:
1116:
1110:
1107:
1101:
1098:
1092:
1089:
1083:
1080:
1065:
1033:10 V/mm (
1015:
1012:
968:
965:
964:
959:
937:
936:
932:standard state
929:
926:
925:
915:
908:
901:
886:
885:
884:
883:
881:
872:
871:
829:P305+P351+P338
821:P303+P361+P353
813:P301+P330+P331
790:
785:
782:
781:
760:
755:
752:
751:
746:
741:
738:
737:
720:
715:
712:
711:
701:
700:
696:
695:
694:−287.0 kJ/mol
692:
683:
677:
674:
673:
672:−318.0 kJ/mol
670:
664:
658:
650:
647:
646:
643:
637:
626:
623:
622:
619:
607:
604:
603:
599:
598:
595:
590:
587:
586:
583:
573:
570:
569:
559:
557:
552:
549:
548:
538:
530:
525:
520:
517:
516:
511:
506:
503:
502:
498:
497:
494:
488:
487:
486:~300 cm/(V·s)
484:
478:
477:
470:
464:
463:
460:
454:
453:
450:
445:
442:
441:
438:
432:
431:
428:
422:
421:
418:
414:
413:
410:
404:
403:
395:
390:
387:
386:
382:
381:
379:
378:
375:
373:
370:
362:
361:
360:
357:
356:
354:
353:
349:
346:
345:
343:
339:
336:
335:
327:
326:
325:
322:
321:
319:
318:
305:
303:
291:
288:
287:
285:
284:
276:
274:
268:
267:
265:
264:
260:
258:
252:
251:
249:
248:
240:
238:
230:
227:
226:
223:
218:
215:
214:
212:
211:
207:
205:
197:
196:
186:
178:
177:
175:
174:
166:
164:
158:
157:
155:
154:
146:
144:
138:
137:
135:
134:
127:
119:
117:
110:
107:
106:
104:
103:
95:
93:
88:
85:
84:
80:
79:
76:
72:
71:
67:
66:
58:
57:
26:
24:
14:
13:
10:
9:
6:
4:
3:
2:
4801:
4790:
4787:
4785:
4782:
4780:
4777:
4775:
4772:
4770:
4767:
4765:
4762:
4760:
4757:
4756:
4754:
4747:
4732:
4729:
4726:
4723:
4720:
4718:
4715:
4713:
4710:
4708:
4705:
4703:
4700:
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2672:
2670:(I) compounds
2669:
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2640:
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2589:
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2578:
2576:9781498754293
2572:
2568:
2564:
2563:
2557:
2556:
2553:Cited sources
2552:
2543:
2539:
2535:
2531:
2527:
2523:
2519:
2515:
2511:
2507:
2503:
2496:
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2468:
2465:molecules?".
2457:
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2256:
2251:
2247:
2243:
2239:
2235:
2231:
2227:
2223:
2218:
2213:
2210:(9): 095014.
2209:
2205:
2198:
2195:
2190:
2186:
2182:
2178:
2174:
2170:
2166:
2162:
2155:
2152:
2147:
2143:
2139:
2135:
2130:
2125:
2121:
2117:
2114:(1): 012034.
2113:
2109:
2105:
2098:
2095:
2090:
2084:
2080:
2075:
2074:
2065:
2062:
2057:
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2039:
2035:
2031:
2027:
2023:
2016:
2013:
2008:
2004:
2000:
1996:
1992:
1988:
1984:
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1975:
1970:
1966:
1962:
1958:
1954:
1950:
1943:
1940:
1935:
1931:
1927:
1923:
1918:
1913:
1909:
1905:
1902:(4): 044001.
1901:
1897:
1893:
1886:
1883:
1878:
1874:
1869:
1864:
1860:
1856:
1852:
1848:
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1643:
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1624:
1621:
1615:
1612:
1601:
1597:
1593:
1589:
1585:
1581:
1576:
1571:
1568:(4): 044602.
1567:
1563:
1559:
1551:
1549:
1547:
1543:
1538:
1532:
1524:
1520:
1516:
1512:
1509:(7): 075208.
1508:
1504:
1497:
1494:
1488:
1485:
1480:
1476:
1472:
1468:
1464:
1460:
1453:
1450:
1444:
1442:
1438:
1431:
1426:
1423:
1421:
1418:
1416:
1413:
1411:
1408:
1406:
1403:
1401:
1398:
1396:
1393:
1391:
1390:Boron nitride
1388:
1387:
1383:
1378:
1377:semiconductor
1374:
1371:
1368:
1364:
1360:
1357:
1354:
1351:
1348:
1347:
1346:
1343:
1341:
1337:
1332:
1330:
1326:
1322:
1318:
1313:
1311:
1306:
1303:
1301:
1297:
1293:
1289:
1285:
1284:piezoelectric
1281:
1277:
1273:
1269:
1262:
1260:
1250:
1246:
1242:
1234:
1232:
1230:
1221:
1219:
1215:
1211:
1207:
1203:
1202:mineral acids
1198:
1191:
1189:
1186:
1184:
1180:
1176:
1171:
1169:
1165:
1162:AlN has high
1155:
1152:
1149:
1146:
1143:
1140:
1137:
1136:
1133:
1126:
1124:
1117:
1115:
1108:
1106:
1099:
1097:
1090:
1088:
1081:
1079:
1078:
1072:
1069:
1062:
1058:
1053:
1051:
1047:
1043:
1038:
1036:
1028:
1024:
1019:
1013:
1011:
1010:frequencies.
1009:
1006:operating at
1005:
1001:
997:
993:
989:
985:
982:) is a solid
981:
978:
974:
962:
955:
950:
933:
927:
920:
913:
906:
882:
879:
878:
874:
873:
791:
788:
784:
783:
761:
758:
754:
753:
750:
747:
744:
740:
739:
735:
730:
725:
721:
718:
714:
713:
709:
707:
702:
697:
693:
688:
680:
676:
675:
671:
663:
655:
649:
648:
644:
636:
631:
625:
624:
620:
615:
610:
609:Heat capacity
606:
605:
600:
596:
593:
589:
588:
584:
580:
576:
575:Formula units
572:
571:
566:
562:
558:
555:
551:
550:
547:
543:
536:
529:
526:
523:
519:
518:
515:
512:
509:
505:
504:
499:
495:
493:
490:
489:
485:
483:
480:
479:
475:
471:
469:
466:
465:
461:
459:
456:
455:
451:
448:
444:
443:
439:
437:
436:Melting point
434:
433:
429:
427:
424:
423:
419:
416:
415:
411:
409:
406:
405:
396:
393:
389:
388:
383:
374:
369:
365:
358:
344:
337:InChI=1S/Al.N
334:
330:
323:
315:
311:
310:DTXSID8066977
307:
306:
304:
294:
290:
289:
282:
278:
277:
275:
273:
270:
269:
262:
261:
259:
257:
254:
253:
246:
242:
241:
239:
233:
229:
228:
224:
221:
217:
216:
209:
208:
206:
204:
199:
198:
194:
190:
187:
185:
183:ECHA InfoCard
180:
179:
172:
168:
167:
165:
163:
160:
159:
152:
148:
147:
145:
143:
140:
139:
132:
128:
125:
121:
120:
118:
114:
109:
108:
101:
97:
96:
94:
91:
87:
86:
81:
73:
68:
64:
59:
55:
50:
41:
34:
19:
4745:
4476:
3812:
2809:
2561:
2509:
2505:
2495:
2470:
2466:
2456:
2431:
2427:
2421:
2412:
2402:
2388:
2377:. Retrieved
2373:wirelessZONE
2372:
2363:
2354:
2344:
2317:
2313:
2303:
2292:. Retrieved
2272:
2268:
2258:
2207:
2203:
2197:
2164:
2160:
2154:
2111:
2107:
2097:
2072:
2064:
2032:(1): 89–98.
2029:
2025:
2015:
1964:
1960:
1942:
1899:
1895:
1885:
1850:
1846:
1836:
1803:
1799:
1759:
1755:
1745:
1734:. Retrieved
1729:
1698:
1694:
1684:
1665:
1659:
1650:
1633:
1629:
1623:
1614:
1603:. Retrieved
1565:
1561:
1531:cite journal
1506:
1503:Phys. Rev. B
1502:
1496:
1487:
1462:
1458:
1452:
1344:
1333:
1314:
1307:
1304:
1266:
1263:Applications
1238:
1222:
1199:
1195:
1187:
1172:
1161:
1131:
1122:
1113:
1104:
1095:
1086:
1070:
1054:
1039:
1020:
1017:
972:
971:
876:
748:
705:
686:
661:
634:
613:
597:Tetrahedral
578:
564:
560:
541:
534:
527:
496:321 W/(m·K)
256:RTECS number
83:Identifiers
75:Other names
2860:Al(OH)(OAc)
1268:Epitaxially
1235:Manufacture
743:Signal word
544:, No. 186,
522:Space group
430:3.255 g/cm
417:Appearance
385:Properties
189:100.041.931
151:CHEBI:50884
4753:Categories
2379:2008-10-18
2294:2023-06-26
1974:1904.00345
1736:2014-01-01
1605:2020-04-03
1575:1911.01595
1432:References
1334:AlN-based
1046:zincblende
717:Pictograms
501:Structure
472:6.015 eV (
458:Solubility
408:Molar mass
281:7K47D7P3M0
162:ChemSpider
111:3D model (
100:24304-00-5
90:CAS Number
2567:CRC Press
2467:Physica E
2336:2365-709X
2289:0002-7820
2250:118571039
2242:1367-2630
2217:1210.0975
2146:137160554
2138:1757-899X
2056:0021-8979
1999:0021-8979
1953:Pop, Eric
1934:233936255
1926:0268-1242
1877:0021-8979
1828:250782290
1820:0022-3727
1778:1984-6428
1600:207780348
1292:RF filter
1272:thin film
1249:sintering
1214:chlorides
988:aluminium
861:P403+P233
849:P337+P313
845:P332+P313
825:P304+P340
817:P302+P352
708:labelling
654:formation
628:Std molar
263:BD1055000
210:246-140-8
202:EC Number
4759:Nitrides
2534:16710416
2189:20028149
2181:20211766
2007:90262793
1556:(2020).
1479:91552821
1384:See also
1363:crucible
1218:cryolite
1210:alkalies
1204:through
1057:wurtzite
1042:wurtzite
1000:band gap
996:wurtzite
877:NFPA 704
699:Hazards
514:Wurtzite
468:Band gap
4573:
3488:nitride
3434:ClAl(CH
3202:NaAl(SO
2868:Al(OAc)
2730:Al(III)
2542:4373542
2514:Bibcode
2475:Bibcode
2436:Bibcode
2222:Bibcode
2116:Bibcode
2034:Bibcode
1979:Bibcode
1904:Bibcode
1855:Bibcode
1580:Bibcode
1511:Bibcode
1227:-based
1168:ceramic
984:nitride
954:what is
952: (
749:Warning
682:(Δ
630:entropy
426:Density
232:PubChem
3278:(Al(CH
3190:KAl(SO
3178:)Al(SO
3059:Al(OH)
2930:Al(MnO
2851:Al(OH)
2843:Al(OH)
2778:NaAlCl
2762:Al(CN)
2698:Al(II)
2573:
2540:
2532:
2506:Nature
2334:
2320:(21).
2287:
2248:
2240:
2187:
2179:
2144:
2136:
2085:
2081:–124.
2054:
2005:
1997:
1932:
1924:
1875:
1826:
1818:
1776:
1672:
1598:
1477:
1280:wafers
1270:grown
1156:4.982
1153:3.112
1141:-0.60
1114:(GPa)
1105:(GPa)
1096:(C/m)
1087:(C/m)
949:verify
946:
474:direct
364:SMILES
225:13611
70:Names
3372:CH(CH
3368:Al(CH
3318:CH(CH
3314:Al(CH
3294:(Al(C
3166:Alums
3103:LiAlH
3079:NaAlH
3054:AlOHO
3034:AlAsO
2884:(OAc)
2815:Al(NO
2742:Al(BH
2622:Al(I)
2538:S2CID
2246:S2CID
2212:arXiv
2185:S2CID
2142:S2CID
2003:S2CID
1969:arXiv
1930:S2CID
1824:S2CID
1596:S2CID
1570:arXiv
1475:S2CID
1373:steel
1361:as a
1144:1.46
1037:).
329:InChI
245:90455
171:81668
142:ChEBI
113:JSmol
4479:PbNH
4377:Ba(N
4215:Sr(N
3979:Ca(N
3800:Mg(N
3602:Be(N
3553:He(N
3418:Ti(C
3389:Al(C
3351:Al(C
3334:Al(C
3225:Al(C
2946:(MoO
2910:Al(C
2905:AlSb
2897:AlPO
2770:AlCl
2754:AlBr
2737:AlAs
2675:Al(C
2658:AlOH
2634:AlCl
2629:AlBr
2571:ISBN
2530:PMID
2332:ISSN
2285:ISSN
2238:ISSN
2177:PMID
2134:ISSN
2083:ISBN
2052:ISSN
1995:ISSN
1922:ISSN
1873:ISSN
1816:ISSN
1774:ISSN
1670:ISBN
1537:link
1375:and
1300:MEMS
1216:and
1177:and
1150:373
1147:108
1138:AlN
1132:(Å)
1123:(Å)
869:P501
865:P405
857:P363
853:P362
841:P321
837:P312
833:P310
809:P280
805:P271
801:P264
797:P261
793:P260
779:H411
775:H373
771:H335
767:H319
763:H315
272:UNII
4733:No
4730:Md
4727:Fm
4724:Es
4721:Cf
4717:BkN
4712:CmN
4707:AmN
4702:PuN
4697:NpN
4676:PaN
4656:Ac
4653:**
4647:YbN
4642:TmN
4637:ErN
4632:HoN
4627:DyN
4622:TbN
4617:GdN
4612:EuN
4607:SmN
4602:PmN
4597:NdN
4592:PrN
4587:CeN
4582:LaN
4566:Og
4563:Ts
4560:Lv
4557:Mc
4554:Fl
4551:Nh
4548:Cn
4545:Rg
4542:Ds
4539:Mt
4536:Hs
4533:Bh
4530:Sg
4527:Db
4524:Rf
4521:Lr
4518:**
4501:Fr
4496:Rn
4493:At
4490:Po
4486:BiN
4448:Au
4445:Pt
4442:Ir
4439:Os
4414:TaN
4398:HfN
4393:LuN
4354:CsN
4347:Xe
4304:SbN
4300:Sn
4296:InN
4266:PdN
4262:Rh
4259:Ru
4256:Tc
4240:NbN
4235:ZrN
4192:RbN
4185:Kr
4181:+Br
4173:BrN
4143:+As
4139:AsN
4134:-Ge
4116:GaN
4022:CrN
3999:TiN
3994:ScN
3939:Ar
3935:+Cl
3927:ClN
3918:NCl
3831:-Si
3813:AlN
3777:NaN
3760:Ne
3579:LiN
3490:ion
3264:AlO
3174:(NH
3152:AlF
3115:OCH
3107:(OC
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