258:
crystal lattice of each material. For most epitaxial growths, the new layer is usually crystalline and each crystallographic domain of the overlayer must have a well-defined orientation relative to the substrate crystal structure. Epitaxy can involve single-crystal structures, although grain-to-grain epitaxy has been observed in granular films. For most technological applications, single-domain epitaxy, which is the growth of an overlayer crystal with one well-defined orientation with respect to the substrate crystal, is preferred. Epitaxy can also play an important role while growing superlattice structures.
1041:
1033:
889:
810:
equilibrium between dissolution and deposition, the deposition of the semiconductor crystal on the substrate is relatively fast and uniform. The most used substrate is indium phosphide (InP). Other substrates like glass or ceramic can be applied for special applications. To facilitate nucleation, and to avoid tension in the grown layer the thermal expansion coefficient of substrate and grown layer should be similar.
872:. The concentration of impurity in the gas phase determines its concentration in the deposited film. Doping can also be achieved by a site-competition technique, where the growth precursor ratios are tuned to enhance the incorporation of vacancies, specific dopant species or vacant-dopant clusters into the lattice. Additionally, the high temperatures at which epitaxy is performed may allow dopants to
576:. Manufacturing issues include control of the amount and uniformity of the deposition's resistivity and thickness, the cleanliness and purity of the surface and the chamber atmosphere, the prevention of the typically much more highly doped substrate wafer's diffusion of dopant to the new layers, imperfections of the growth process, and protecting the surfaces during manufacture and handling.
585:
838:
growth. The annealing step used to recrystallize or heal silicon layers amorphized during ion implantation is also considered to be a type of solid phase epitaxy. The impurity segregation and redistribution at the growing crystal-amorphous layer interface during this process is used to incorporate low-solubility dopants in metals and silicon.
646:
829:. The process has been used to create silicon for thin-film solar cells and far-infrared photodetectors. Temperature and centrifuge spin rate are used to control layer growth. Centrifugal LPE has the capability to create dopant concentration gradients while the solution is held at constant temperature.
552:
involves epitaxial growth between the grains of a multicrystalline epitaxial and seed layer. This can usually occur when the seed layer only has an out-of-plane texture but no in-plane texture. In such a case, the seed layer consists of grains with different in-plane textures. The epitaxial overlayer
314:
is a kind of epitaxy performed with materials that are different from each other. In heteroepitaxy, a crystalline film grows on a crystalline substrate or film of a different material. This technology is often used to grow crystalline films of materials for which crystals cannot otherwise be obtained
285:
of the film aligning with the index of the substrate. In the simplest case, the epitaxial layer can be a continuation of the same semiconductor compound as the substrate; this is referred to as homoepitaxy. Otherwise, the epitaxial layer will be composed of a different compound; this is referred to
280:
One of the main commercial applications of epitaxial growth is in the semiconductor industry, where semiconductor films are grown epitaxially on semiconductor substrate wafers. For the case of epitaxial growth of a planar film atop a substrate wafer, the epitaxial film's lattice will have a specific
1211:
were small enough to fit into a truly close-packed structure of oxygen anions then the spacing between the nearest neighbour oxygen sites would be the same for both species. The radius of the oxygen ion, however, is only 1.36 Ă
and the Fe cations are big enough to cause some variations. The Fe radii
809:
Liquid-phase epitaxy (LPE) is a method to grow semiconductor crystal layers from the melt on solid substrates. This happens at temperatures well below the melting point of the deposited semiconductor. The semiconductor is dissolved in the melt of another material. At conditions that are close to the
257:
layers are formed with one or more well-defined orientations with respect to the crystalline seed layer. The deposited crystalline film is called an epitaxial film or epitaxial layer. The relative orientation(s) of the epitaxial layer to the seed layer is defined in terms of the orientation of the
837:
Solid-phase epitaxy (SPE) is a transition between the amorphous and crystalline phases of a material. It is usually produced by depositing a film of amorphous material on a crystalline substrate, then heating it to crystallize the film. The single-crystal substrate serves as a template for crystal
528:
is larger than that, the film experiences a volumetric strain that builds with each layer until a critical thickness. With increased thickness, the elastic strain in the film is relieved by the formation of dislocations, which can become scattering centers that damage the quality of the structure.
922:
Sometimes many separate crystals form the overgrowth on a single substrate, and then if there is epitaxy all the overgrowth crystals will have a similar orientation. The reverse, however, is not necessarily true. If the overgrowth crystals have a similar orientation there is probably an epitaxic
614:
In the VW growth regime, the epitaxial film grows out of 3D nuclei on the growth surface. In this mode, the adsorbate-adsorbate interactions are stronger than adsorbate-surface interactions, leading to island formation by local nucleation and the epitaxial layer is formed when the islands join.
591:. Cross-section views of the three primary modes of thin-film growth including (a) VolmerâWeber (VW: island formation), (b) Frankâvan der Merwe (FM: layer-by-layer), and (c) StranskiâKrastanov (SK: layer-plus-island). Each mode is shown for several different amounts of surface coverage, Î.
700:
where (g) and (s) represent gas and solid phases, respectively. This reaction is reversible, and the growth rate depends strongly upon the proportion of the two source gases. Growth rates above 2 micrometres per minute produce polycrystalline silicon, and negative growth rates
1128:
plane of hematite (perpendicular to the c axis). In epitaxy these directions tend to line up with each other, resulting in the axis of the rutile overgrowth being parallel to the c axis of hematite, and the c axis of rutile being parallel to one of the axes of hematite.
478:
of the film and the substrate. The film and substrate could have similar lattice spacings but also different thermal expansion coefficients. If a film is grown at a high temperature, it can experience large strains upon cooling to room temperature. In reality,
625:
Practical epitaxial growth, however, takes place in a high supersaturation regime, away from thermodynamic equilibrium. In that case, the epitaxial growth is governed by adatom kinetics rather than thermodynamics, and 2D step-flow growth becomes dominant.
297:
is a kind of epitaxy performed with only one material, in which a crystalline film is grown on a substrate or film of the same material. This technology is often used to grow a more pure film than the substrate and to fabricate layers with different
2052:; Samperi, S. A.; Beeman, Jeffrey W.; Haller, Eugene E. (8 February 2002). Strojnik, Marija; Andresen, Bjorn F. (eds.). "Liquid phase epitaxy centrifuge for growth of ultrapure gallium arsenide for far-infrared photoconductors".
545:
is a process in which the heteroepitaxial film is growing vertically and laterally simultaneously. In 2D crystal heterostructure, graphene nanoribbons embedded in hexagonal boron nitride give an example of pendeo-epitaxy.
621:
The SK mode is a combination of VW and FM modes. In this mechanism, the growth initiates in the FM mode, forming 2D layers, but after reaching a critical thickness, enters a VW-like 3D island growth regime.
1204:(a plane that symmetrically "cuts off" a corner of a cube). The hematite structure is based on close-packed oxygen anions stacked in an AB-AB sequence, which results in a crystal with hexagonal symmetry.
416:
2207:
Zhang, Xiankun; Gao, Li; Yu, Huihui; Liao, Qingliang; Kang, Zhuo; Zhang, Zheng; Zhang, Yue (20 July 2021). "Single-Atom
Vacancy Doping in Two-Dimensional Transition Metal Dichalcogenides".
1024:
parameters, a = 8.16 Ă
, b = 12.87 Ă
, c = 7.11 Ă
, Îą = 93.45°, β = 116.4°, Îł = 90.28° for albite and a = 8.5784 Ă
, b = 12.96 Ă
, c = 7.2112 Ă
, ι = 90.3°, β = 116.05°, γ = 89° for microcline.
539:
is a process similar to heteroepitaxy except that thin-film growth is not limited to two-dimensional growth; the substrate is similar only in structure to the thin-film material.
506:
350:
Heteroepitaxy occurs when a film of different composition and/or crystalline films grown on a substrate. In this case, the amount of strain in the film is determined by the
526:
1988:
2164:
Larkin, David J.; Neudeck, Philip G.; Powell, J. Anthony; Matus, Lawrence G. (26 September 1994). "Site-competition epitaxy for superior silicon carbide electronics".
2250:
Holmes-Hewett, W. F. (16 August 2021). "Electronic structure of nitrogen-vacancy doped SmN: Intermediate valence and 4f transport in a ferromagnetic semiconductor".
472:
445:
2129:
Custer, J.S.; Polman, A.; Pinxteren, H. M. (15 March 1994). "Erbium in crystal silicon: Segregation and trapping during solid phase epitaxy of amorphous silicon".
926:
Some authors consider that overgrowths of a second generation of the same mineral species should also be considered as epitaxy, and this is common terminology for
553:
then creates specific textures along each grain of the seed layer, due to lattice matching. This kind of epitaxial growth doesn't involve single-crystal films.
533:
systems thanks to the additional energy caused by de deformation. A very popular system with great potential for microelectronic applications is that of SiâGe.
709:
byproduct is present. (Hydrogen chloride may be intentionally added to etch the wafer.) An additional etching reaction competes with the deposition reaction:
308:
is a process similar to homoepitaxy except that the thin-film growth is not limited to two-dimensional growth. Here the substrate is the thin-film material.
618:
In the FM growth mode, adsorbate-surface and adsorbate-adsorbate interactions are balanced, which promotes 2D layer-by-layer or step-flow epitaxial growth.
51:
2658:
233:
935:
1325:
162:
2603:
2467:
1566:
1458:
1357:
K, Prabahar (26 October 2020). "Grain to Grain
Epitaxy-Like Nano Structures of (Ba,Ca)(ZrTi)O3/ CoFe2O4 for MagnetoâElectric Based Devices".
1825:
A. Y. Cho, "Growth of III\âV semiconductors by molecular beam epitaxy and their properties," Thin Solid Films, vol. 100, pp. 291â317, 1983.
192:
2017:
Tenth E.C. Photovoltaic Solar Energy
Conference: Proceedings of the International Conference, held at Lisbon, Portugal, 8â12 April 1991
2668:
1796:
328:
2416:
Acta
Crystallographica Section A Crystal Physics, Diffraction, Theoretical and General Crystallography Volume 33, Part 4 (July 1977)
2106:
2025:
1964:
1924:
1835:
Cheng, K. Y. (November 1997). "Molecular beam epitaxy technology of III-V compound semiconductors for optoelectronic applications".
766:
The reaction chamber where this process takes place may be heated by lamps located outside the chamber. A common technique used in
1057:
797:, in which precursor gases are alternatively pulsed into a chamber, leading to atomic monolayer growth by surface saturation and
137:
868:
in the source gas, liberated by evaporation or wet etching of the surface, may also diffuse into the epitaxial layer and cause
359:
600:
1431:
1268:
606:
142:
2653:
2544:
Waldmann, T. (2012). "The role of surface defects in large organic molecule adsorption: substrate configuration effects".
1765:
Encyclopedia of
Materials: Science and Technology, Sect. 1.9, Physical Properties of Thin Films and Artificial Multilayers
1088:
Some pairs of minerals that are not related structurally or compositionally may also exhibit epitaxy. A common example is
958:
226:
101:
1812:
1049:
182:
1649:
Chen, Lingxiu; Wang, Haomin; Tang, Shujie (2017). "Edge control of graphene domains grown on hexagonal boron nitride".
561:
1248:. Indeed, epitaxy is the only affordable method of high quality crystal growth for many semiconductor materials. In
790:, on the other hand, is an ultra-high vacuum process that uses gas phase precursors to generate the molecular beam.
702:
1245:
1109:
658:
654:
2663:
2501:
Waldmann, T. (2011). "Growth of an oligopyridine adlayer on Ag(100) â A scanning tunnelling microscopy study".
1220:(4 or 8). Nevertheless, the O spacings are similar for the two minerals hence hematite can readily grow on the
1010:
946:
219:
1395:
Hwang, Cherngye (30 September 1998). "Imaging of the grain-to-grain epitaxy in NiFe/FeMn thin-film couples".
1113:
670:
344:
299:
1300:
931:
849:
842:
771:
767:
569:
172:
482:
2366:
White, John S.; Richards, R. Peter (17 February 2010). "Let's Get It Right: EpitaxyâA Simple
Concept?".
1315:
1295:
900:
In mineralogy, epitaxy is the overgrowth of one mineral on another in an orderly way, such that certain
787:
666:
934:
level on a semiconductor substrate of the same material. For naturally produced minerals, however, the
2622:
2553:
2510:
2375:
2321:
2259:
2173:
2138:
2061:
1879:
1723:
1668:
1605:
1513:
1330:
794:
530:
50:
1305:
1217:
316:
167:
511:
2399:
2345:
2283:
2232:
2077:
1950:
1711:
1692:
1658:
1595:
1503:
1374:
1310:
825:. Centrifugally formed film growth is a process used to form thin layers of materials by using a
187:
147:
17:
2599:
2569:
2526:
2463:
2391:
2337:
2275:
2224:
2189:
2102:
2021:
2015:
1960:
1954:
1920:
1914:
1895:
1852:
1792:
1684:
1631:
1562:
1539:
1492:"Silane-catalysed fast growth of large single-crystalline graphene on hexagonal boron nitride"
1454:
1427:
1121:
916:
905:
901:
706:
177:
70:
2096:
1786:
2561:
2518:
2383:
2329:
2267:
2216:
2181:
2146:
2069:
1887:
1844:
1731:
1676:
1621:
1613:
1529:
1521:
1474:
1404:
1366:
1260:
822:
573:
475:
332:
111:
1040:
450:
423:
2626:
1249:
737:
635:
320:
253:
means "on top ofâ) refers to a type of crystal growth or material deposition in which new
202:
132:
91:
42:
2632:
2557:
2514:
2379:
2325:
2263:
2177:
2142:
2065:
1883:
1727:
1672:
1609:
1517:
1200:
stacked in an ABC-ABC sequence. In this packing the close-packed layers are parallel to
315:
and to fabricate integrated crystalline layers of different materials. Examples include
1626:
1583:
1534:
1491:
1335:
1280:
1264:
1241:
1032:
888:
733:
266:
197:
116:
96:
2647:
2403:
2349:
2287:
2236:
2081:
1891:
1791:(2nd ed.). Chichester, West Sussex, England: John Wiley & Sons. p. 23.
1378:
1285:
942:
927:
919:
are clear then the epitaxic relationship can be deduced just by a visual inspection.
798:
783:
649:
Figure 1: Basic processes inside the growth chambers of a) MOVPE, b) MBE, and c) CBE.
1696:
661:
methods that deliver the precursors to the substrate in gaseous state. For example,
2446:
Nesse, William (2000). Introduction to
Mineralogy. Oxford University Press. Page 79
2098:
Chemical
Physics of Thin Film Deposition Processes for Micro- and Nano-Technologies
2049:
1229:
1225:
1221:
1201:
1125:
1117:
740:
source gases. For instance, the silane reaction occurs at 650 °C in this way:
282:
207:
106:
1735:
2591:
2483:
2457:
1448:
2271:
1045:
1014:
756:
281:
orientation relative to the substrate wafer's crystalline lattice, such as the
157:
2220:
941:
Another man-made application of epitaxy is the making of artificial snow using
915:
If the crystals of both minerals are well formed so that the directions of the
302:
levels. In academic literature, homoepitaxy is often abbreviated to "homoepi".
2426:
2387:
2333:
1257:
1073:
986:
826:
75:
2427:"FMF - Friends of Minerals Forum, discussion and message board :: Index"
2395:
2341:
2279:
2228:
2193:
1899:
1856:
813:
Centrifugal liquid-phase epitaxy is used commercially to make thin layers of
1870:
Tsang, W.T. (1989). "From chemical vapor epitaxy to chemical beam epitaxy".
1760:
1584:"Oriented graphene nanoribbons embedded in hexagonal boron nitride trenches"
1320:
1253:
1162:
1065:
1021:
873:
857:
818:
775:
31:
2573:
2530:
1813:"Applied Materials Series 7600 Epitaxial Reactor System - the Chip History"
1688:
1635:
1543:
1370:
2048:
Katterloher, Reinhard O.; Jakob, Gerd; Konuma, Mitsuharu; Krabbe, Alfred;
755:
VPE is sometimes classified by the chemistry of the source gases, such as
1290:
1138:
1097:
1077:
938:(IMA) definition requires that the two minerals be of different species.
861:
674:
340:
324:
1916:
Liquid Phase
Epitaxy of Electronic, Optical and Optoelectronic Materials
1617:
1036:
Rutile on hematite, from Novo
Horizonte, Bahia, Northeast Region, Brazil
793:
Another widely used technique in microelectronics and nanotechnology is
584:
2565:
2522:
2456:
Klein, Cornelis; Hurlbut, Cornelius Searle; Dana, James Dwight (1993).
1953:; Parkin, S. S. P.; Dobson, P. J.; Neave, J. H.; Arrott, A. S. (2013).
1680:
1525:
1208:
1116:, but there are directions of similar spacing between the atoms in the
814:
786:; practically free space) to the substrate and start epitaxial growth.
653:
Homoepitaxial growth of semiconductor thin films are generally done by
595:
Heteroepitaxial growth is classified into three primary growth modes--
557:
336:
254:
65:
2073:
1478:
2185:
2150:
2014:
Luque, A.; Sala, G.; Palz, Willeke; Santos, G. dos; Helm, P. (2012).
1848:
1712:"Phänomenologische Theorie der Kristallabscheidung an Oberflächen. I"
1408:
1194:
1089:
1061:
962:
904:
of the two minerals are aligned. This occurs when some planes in the
865:
853:
779:
729:
1663:
1600:
1508:
645:
1056:
Minerals that have the same composition but different structures (
1039:
1031:
909:
908:
of the overgrowth and the substrate have similar spacings between
893:
887:
852:
during deposition by adding impurities to the source gas, such as
760:
644:
930:
scientists who induce epitaxic growth of a film with a different
774:(MBE). In this method, a source material is heated to produce an
565:
1450:
Epitaxy of Semiconductors: Introduction to Physical Principles
1213:
1197:
2637:
1959:. Springer Science & Business Media. pp. 174â176.
2619:
1956:
Thin Film Growth Techniques for Low-Dimensional Structures
411:{\displaystyle \varepsilon ={\frac {a_{f}-a_{s}}{a_{f}}}}
1453:. Springer Science & Business Media. pp. 4â6.
876:
into the growing layer from other layers in the wafer (
2101:. Springer Science & Business Media. p. 45.
1473:
M. Schreck et al., Appl. Phys. Lett. 78, 192 (2001);
514:
485:
453:
426:
362:
949:
silver iodide and ice have similar cell dimensions.
778:
beam of particles, which travel through a very high
2598:(2nd ed.). Upper Saddle River: Prentice Hall.
1193:. The magnetite structure is based on close-packed
529:Heteroepitaxy is commonly used to create so-called
124:
83:
57:
41:
30:"Epitaxis" redirects here. Not to be confused with
1490:Tang, Shujie; Wang, Haomin; Wang, Huishan (2015).
520:
500:
466:
439:
410:
1060:) may also have epitaxic relations. Examples are
1788:An Introduction To Semiconductor Microtechnology
1754:
1752:
1048:after magnetite, with terraced epitaxial faces.
27:Crystal growth process relative to the substrate
2215:(8). American Chemical Society (ACS): 655â668.
892:Rutile epitaxial on hematite nearly 6 cm long.
2258:(7). American Physical Society (APS): 075124.
1989:"Speedy production of silicon for solar cells"
2629:: a central forum for the epitaxy-communities
1945:
1943:
1582:Chen, Lingxiu; He, Li; Wang, Huishan (2017).
1212:vary from 0.49 Ă
to 0.92 Ă
, depending on the
961:) may have epitaxic relations. An example is
568:(CMOS), but it is particularly important for
227:
8:
2596:Introduction to Microelectronic Fabrication
1919:. John Wiley & Sons. pp. 134â135.
234:
220:
38:
1662:
1625:
1599:
1533:
1507:
513:
484:
458:
452:
431:
425:
400:
389:
376:
369:
361:
1120:plane of rutile (perpendicular to the a
583:
566:complementary metalâoxideâsemiconductors
1422:Christensen, Morten Jagd (April 1997).
1390:
1388:
1346:
957:Minerals that have the same structure (
936:International Mineralogical Association
677:at approximately 1200 to 1250 °C:
508:is necessary for obtaining epitaxy. If
1561:. Elsevier Science. pp. 513â588.
1352:
1350:
1326:Vertical-cavity surface-emitting laser
1252:, epitaxy is used to create and study
277:(ĎΏΞΚĎ), meaning "an ordered manner".
2442:
2440:
2361:
2359:
2307:
2305:
2303:
2301:
2299:
2297:
2054:Infrared Spaceborne Remote Sensing IX
1987:Christensen, Arnfinn (29 July 2015).
1913:Capper, Peter; Mauk, Michael (2007).
1424:Epitaxy, Thin films and Superlattices
923:relationship, but it is not certain.
7:
2431:www.mineral-forum.com/message-board/
2640:: a specialized software in epitaxy
2546:Physical Chemistry Chemical Physics
2503:Physical Chemistry Chemical Physics
560:-based manufacturing processes for
501:{\displaystyle \varepsilon <9\%}
193:Shaping processes in crystal growth
2374:(2). Informa UK Limited: 173â176.
2320:(4). Informa UK Limited: 317â320.
1224:faces of magnetite, with hematite
495:
329:aluminium gallium indium phosphide
25:
2312:Rakovan, John (2006). "Epitaxy".
2172:(13). AIP Publishing: 1659â1661.
1785:Morgan, D. V.; Board, K. (1991).
2659:Semiconductor device fabrication
1716:Zeitschrift fĂźr Kristallographie
665:is most commonly deposited from
49:
18:Centifugually formed film growth
1447:Udo W. Pohl (11 January 2013).
163:Fractional crystallization
2209:Accounts of Materials Research
1269:scanning tunnelling microscopy
1:
1878:(1â4). Elsevier BV: 121â131.
1736:10.1524/zkri.1958.110.1-6.372
1557:F. Francis, Lorraine (2016).
1892:10.1016/0022-0248(89)90364-3
1426:. Risø National Laboratory.
945:, which is possible because
562:bipolar junction transistors
521:{\displaystyle \varepsilon }
273:(áźĎÎŻ), meaning "above", and
183:Laser-heated pedestal growth
2590:Jaeger, Richard C. (2002).
2272:10.1103/physrevb.104.075124
1759:Brune, H. (14 April 2009).
173:Hydrothermal synthesis
138:BridgmanâStockbarger method
2685:
2221:10.1021/accountsmr.1c00097
2131:Journal of Applied Physics
1397:Journal of Applied Physics
1009:. Both these minerals are
848:An epitaxial layer can be
633:
29:
2669:Methods of crystal growth
2388:10.1080/00357521003591165
2334:10.3200/rmin.81.4.317-320
2020:. Springer. p. 694.
1872:Journal of Crystal Growth
1246:semiconductor fabrication
728:Silicon VPE may also use
659:physical vapor deposition
215:
143:Van Arkelâde Boer process
129:
88:
62:
48:
1256:and multilayer films of
705:) may occur if too much
168:Fractional freezing
2166:Applied Physics Letters
1837:Proceedings of the IEEE
671:germanium tetrachloride
570:compound semiconductors
345:hexagonal boron nitride
148:Czochralski method
1371:10.1021/acsanm.0c02265
1301:Selective area epitaxy
1228:parallel to magnetite
1053:
1037:
897:
772:molecular beam epitaxy
768:compound semiconductor
650:
592:
550:Grain-to-grain epitaxy
522:
502:
468:
441:
412:
125:Methods and technology
1710:Bauer, Ernst (1958).
1588:Nature Communications
1496:Nature Communications
1316:Thermal laser epitaxy
1296:Quantum cascade laser
1133:Hematite on magnetite
1043:
1035:
917:crystallographic axes
891:
788:Chemical beam epitaxy
667:silicon tetrachloride
648:
587:
523:
503:
469:
467:{\displaystyle a_{s}}
442:
440:{\displaystyle a_{f}}
413:
335:(GaAs) or diamond or
2654:Thin film deposition
2633:Deposition processes
2625:9 March 2013 at the
2488:abulafia.mt.ic.ac.uk
2459:Manual of mineralogy
2368:Rocks & Minerals
2314:Rocks & Minerals
2095:Pauleau, Y. (2012).
1559:Materials Processing
1359:ACS Appl. Nano Mater
1331:Wake Shield Facility
1058:polymorphic minerals
1028:Polymorphic minerals
795:atomic layer epitaxy
512:
483:
451:
424:
360:
2558:2012PCCP...1410726W
2515:2011PCCP...1320724W
2380:2010RoMin..85..173W
2326:2006RoMin..81..317R
2264:2021PhRvB.104g5124H
2178:1994ApPhL..65.1659L
2143:1994JAP....75.2809C
2066:2002SPIE.4486..200K
1884:1989JCrGr..95..121T
1728:1958ZK....110..372B
1673:2017arXiv170601655C
1618:10.1038/ncomms14703
1610:2017NatCo...814703C
1518:2015NatCo...6.6499T
1403:(6115): 6115â6117.
1365:(11): 11098â11106.
1306:Silicon on sapphire
1240:Epitaxy is used in
1218:coordination number
1216:(2+ or 3+) and the
1137:Another example is
1020:, and with similar
959:isomorphic minerals
953:Isomorphic minerals
602:Frankâvan der Merwe
556:Epitaxy is used in
317:silicon on sapphire
117:Single crystal
97:Crystal growth
2566:10.1039/C2CP40800G
2523:10.1039/C1CP22546D
1681:10.1039/C7NR02578E
1526:10.1038/ncomms7499
1311:Single event upset
1265:single crystalline
1084:Rutile on hematite
1054:
1038:
902:crystal directions
898:
763:(MOVPE or MOCVD).
651:
608:StranskiâKrastanov
593:
564:(BJTs) and modern
518:
498:
464:
437:
408:
286:as heteroepitaxy.
188:Micro-pulling-down
2605:978-0-201-44494-0
2592:"Film Deposition"
2469:978-0-471-57452-1
2252:Physical Review B
2074:10.1117/12.455132
1993:sciencenordic.com
1843:(11): 1694â1714.
1568:978-0-12-385132-1
1479:10.1063/1.1337648
1460:978-3-642-32970-8
1261:organic molecules
707:hydrogen chloride
476:lattice constants
406:
244:
243:
178:Kyropoulos method
107:Seed crystal
102:Recrystallization
71:Crystal structure
16:(Redirected from
2676:
2609:
2578:
2577:
2552:(30): 10726â31.
2541:
2535:
2534:
2498:
2492:
2491:
2480:
2474:
2473:
2453:
2447:
2444:
2435:
2434:
2423:
2417:
2414:
2408:
2407:
2363:
2354:
2353:
2309:
2292:
2291:
2247:
2241:
2240:
2204:
2198:
2197:
2186:10.1063/1.112947
2161:
2155:
2154:
2151:10.1063/1.356173
2126:
2120:
2119:
2117:
2115:
2092:
2086:
2085:
2050:Haegel, Nancy M.
2045:
2039:
2038:
2036:
2034:
2011:
2005:
2004:
2002:
2000:
1984:
1978:
1977:
1975:
1973:
1951:Farrow, R. F. C.
1947:
1938:
1937:
1935:
1933:
1910:
1904:
1903:
1867:
1861:
1860:
1849:10.1109/5.649646
1832:
1826:
1823:
1817:
1816:
1809:
1803:
1802:
1782:
1776:
1775:
1773:
1771:
1756:
1747:
1746:
1744:
1742:
1722:(1â6): 372â394.
1707:
1701:
1700:
1666:
1646:
1640:
1639:
1629:
1603:
1579:
1573:
1572:
1554:
1548:
1547:
1537:
1511:
1487:
1481:
1471:
1465:
1464:
1444:
1438:
1437:
1419:
1413:
1412:
1409:10.1063/1.342110
1392:
1383:
1382:
1354:
1192:
1191:
1190:
1182:
1181:
1173:
1172:
1160:
1159:
1158:
1150:
1149:
1112:and hematite is
1019:
1008:
1007:
1006:
998:
997:
984:
983:
982:
974:
973:
823:gallium arsenide
761:metalorganic VPE
574:gallium arsenide
527:
525:
524:
519:
507:
505:
504:
499:
473:
471:
470:
465:
463:
462:
446:
444:
443:
438:
436:
435:
417:
415:
414:
409:
407:
405:
404:
395:
394:
393:
381:
380:
370:
352:lattice mismatch
333:gallium arsenide
236:
229:
222:
112:Protocrystalline
53:
39:
21:
2684:
2683:
2679:
2678:
2677:
2675:
2674:
2673:
2664:Crystallography
2644:
2643:
2627:Wayback Machine
2616:
2606:
2589:
2586:
2581:
2543:
2542:
2538:
2509:(46): 20724â8.
2500:
2499:
2495:
2484:"Shannon Radii"
2482:
2481:
2477:
2470:
2455:
2454:
2450:
2445:
2438:
2425:
2424:
2420:
2415:
2411:
2365:
2364:
2357:
2311:
2310:
2295:
2249:
2248:
2244:
2206:
2205:
2201:
2163:
2162:
2158:
2128:
2127:
2123:
2113:
2111:
2109:
2094:
2093:
2089:
2047:
2046:
2042:
2032:
2030:
2028:
2013:
2012:
2008:
1998:
1996:
1995:. ScienceNordic
1986:
1985:
1981:
1971:
1969:
1967:
1949:
1948:
1941:
1931:
1929:
1927:
1912:
1911:
1907:
1869:
1868:
1864:
1834:
1833:
1829:
1824:
1820:
1811:
1810:
1806:
1799:
1784:
1783:
1779:
1769:
1767:
1758:
1757:
1750:
1740:
1738:
1709:
1708:
1704:
1648:
1647:
1643:
1594:(2017): 14703.
1581:
1580:
1576:
1569:
1556:
1555:
1551:
1489:
1488:
1484:
1472:
1468:
1461:
1446:
1445:
1441:
1434:
1421:
1420:
1416:
1394:
1393:
1386:
1356:
1355:
1348:
1344:
1277:
1250:surface science
1238:
1189:
1186:
1185:
1184:
1180:
1177:
1176:
1175:
1171:
1169:
1168:
1167:
1165:
1157:
1154:
1153:
1152:
1148:
1145:
1144:
1143:
1141:
1135:
1107:
1103:
1095:
1086:
1071:
1030:
1017:
1005:
1002:
1001:
1000:
996:
993:
992:
991:
989:
981:
978:
977:
976:
972:
969:
968:
967:
965:
955:
886:
846:
835:
807:
751:
747:
738:trichlorosilane
724:
720:
716:
696:
692:
688:
684:
643:
638:
636:Epitaxial wafer
632:
582:
510:
509:
481:
480:
454:
449:
448:
427:
422:
421:
396:
385:
372:
371:
358:
357:
321:gallium nitride
292:
265:comes from the
240:
203:Verneuil method
92:Crystallization
43:Crystallization
35:
28:
23:
22:
15:
12:
11:
5:
2682:
2680:
2672:
2671:
2666:
2661:
2656:
2646:
2645:
2642:
2641:
2635:
2630:
2615:
2614:External links
2612:
2611:
2610:
2604:
2585:
2582:
2580:
2579:
2536:
2493:
2475:
2468:
2448:
2436:
2418:
2409:
2355:
2293:
2242:
2199:
2156:
2121:
2107:
2087:
2040:
2026:
2006:
1979:
1965:
1939:
1925:
1905:
1862:
1827:
1818:
1804:
1798:978-0471924784
1797:
1777:
1761:"Growth Modes"
1748:
1702:
1641:
1574:
1567:
1549:
1502:(6499): 6499.
1482:
1466:
1459:
1439:
1432:
1414:
1384:
1345:
1343:
1340:
1339:
1338:
1336:Zhores Alferov
1333:
1328:
1323:
1318:
1313:
1308:
1303:
1298:
1293:
1288:
1283:
1281:Heterojunction
1276:
1273:
1242:nanotechnology
1237:
1234:
1187:
1178:
1170:
1155:
1146:
1134:
1131:
1105:
1101:
1093:
1085:
1082:
1069:
1029:
1026:
1003:
994:
979:
970:
954:
951:
885:
882:
845:
840:
834:
831:
806:
803:
753:
752:
749:
745:
734:dichlorosilane
726:
725:
722:
718:
714:
698:
697:
694:
690:
686:
682:
642:
639:
631:
628:
581:
578:
543:Pendeo-epitaxy
537:Heterotopotaxy
517:
497:
494:
491:
488:
461:
457:
434:
430:
403:
399:
392:
388:
384:
379:
375:
368:
365:
291:
288:
242:
241:
239:
238:
231:
224:
216:
213:
212:
211:
210:
205:
200:
198:Skull crucible
195:
190:
185:
180:
175:
170:
165:
160:
155:
150:
145:
140:
135:
127:
126:
122:
121:
120:
119:
114:
109:
104:
99:
94:
86:
85:
81:
80:
79:
78:
73:
68:
60:
59:
55:
54:
46:
45:
26:
24:
14:
13:
10:
9:
6:
4:
3:
2:
2681:
2670:
2667:
2665:
2662:
2660:
2657:
2655:
2652:
2651:
2649:
2639:
2638:CrystalXE.com
2636:
2634:
2631:
2628:
2624:
2621:
2618:
2617:
2613:
2607:
2601:
2597:
2593:
2588:
2587:
2583:
2575:
2571:
2567:
2563:
2559:
2555:
2551:
2547:
2540:
2537:
2532:
2528:
2524:
2520:
2516:
2512:
2508:
2504:
2497:
2494:
2489:
2485:
2479:
2476:
2471:
2465:
2461:
2460:
2452:
2449:
2443:
2441:
2437:
2432:
2428:
2422:
2419:
2413:
2410:
2405:
2401:
2397:
2393:
2389:
2385:
2381:
2377:
2373:
2369:
2362:
2360:
2356:
2351:
2347:
2343:
2339:
2335:
2331:
2327:
2323:
2319:
2315:
2308:
2306:
2304:
2302:
2300:
2298:
2294:
2289:
2285:
2281:
2277:
2273:
2269:
2265:
2261:
2257:
2253:
2246:
2243:
2238:
2234:
2230:
2226:
2222:
2218:
2214:
2210:
2203:
2200:
2195:
2191:
2187:
2183:
2179:
2175:
2171:
2167:
2160:
2157:
2152:
2148:
2144:
2140:
2136:
2132:
2125:
2122:
2110:
2108:9789401003537
2104:
2100:
2099:
2091:
2088:
2083:
2079:
2075:
2071:
2067:
2063:
2059:
2055:
2051:
2044:
2041:
2029:
2027:9789401136228
2023:
2019:
2018:
2010:
2007:
1994:
1990:
1983:
1980:
1968:
1966:9781468491456
1962:
1958:
1957:
1952:
1946:
1944:
1940:
1928:
1926:9780470319499
1922:
1918:
1917:
1909:
1906:
1901:
1897:
1893:
1889:
1885:
1881:
1877:
1873:
1866:
1863:
1858:
1854:
1850:
1846:
1842:
1838:
1831:
1828:
1822:
1819:
1814:
1808:
1805:
1800:
1794:
1790:
1789:
1781:
1778:
1766:
1762:
1755:
1753:
1749:
1737:
1733:
1729:
1725:
1721:
1717:
1713:
1706:
1703:
1698:
1694:
1690:
1686:
1682:
1678:
1674:
1670:
1665:
1660:
1656:
1652:
1645:
1642:
1637:
1633:
1628:
1623:
1619:
1615:
1611:
1607:
1602:
1597:
1593:
1589:
1585:
1578:
1575:
1570:
1564:
1560:
1553:
1550:
1545:
1541:
1536:
1531:
1527:
1523:
1519:
1515:
1510:
1505:
1501:
1497:
1493:
1486:
1483:
1480:
1476:
1470:
1467:
1462:
1456:
1452:
1451:
1443:
1440:
1435:
1429:
1425:
1418:
1415:
1410:
1406:
1402:
1398:
1391:
1389:
1385:
1380:
1376:
1372:
1368:
1364:
1360:
1353:
1351:
1347:
1341:
1337:
1334:
1332:
1329:
1327:
1324:
1322:
1319:
1317:
1314:
1312:
1309:
1307:
1304:
1302:
1299:
1297:
1294:
1292:
1289:
1287:
1286:Island growth
1284:
1282:
1279:
1278:
1274:
1272:
1270:
1267:surfaces via
1266:
1262:
1259:
1255:
1251:
1247:
1243:
1235:
1233:
1231:
1227:
1223:
1219:
1215:
1210:
1205:
1203:
1199:
1196:
1164:
1140:
1132:
1130:
1127:
1123:
1119:
1115:
1111:
1099:
1091:
1083:
1081:
1079:
1075:
1067:
1063:
1059:
1051:
1047:
1042:
1034:
1027:
1025:
1023:
1016:
1012:
988:
964:
960:
952:
950:
948:
944:
943:silver iodide
939:
937:
933:
929:
928:semiconductor
924:
920:
918:
913:
911:
907:
903:
895:
890:
883:
881:
879:
878:out-diffusion
875:
871:
867:
863:
859:
855:
851:
844:
841:
839:
832:
830:
828:
824:
820:
816:
811:
804:
802:
800:
799:chemisorption
796:
791:
789:
785:
781:
777:
773:
769:
764:
762:
758:
743:
742:
741:
739:
735:
731:
712:
711:
710:
708:
704:
680:
679:
678:
676:
672:
668:
664:
660:
656:
647:
640:
637:
629:
627:
623:
619:
616:
612:
610:
609:
604:
603:
598:
590:
586:
579:
577:
575:
571:
567:
563:
559:
554:
551:
547:
544:
540:
538:
534:
532:
515:
492:
489:
486:
477:
459:
455:
432:
428:
418:
401:
397:
390:
386:
382:
377:
373:
366:
363:
355:
353:
348:
346:
342:
338:
334:
331:(AlGaInP) on
330:
326:
322:
318:
313:
312:Heteroepitaxy
309:
307:
303:
301:
296:
289:
287:
284:
278:
276:
272:
268:
264:
259:
256:
252:
248:
237:
232:
230:
225:
223:
218:
217:
214:
209:
206:
204:
201:
199:
196:
194:
191:
189:
186:
184:
181:
179:
176:
174:
171:
169:
166:
164:
161:
159:
156:
154:
151:
149:
146:
144:
141:
139:
136:
134:
131:
130:
128:
123:
118:
115:
113:
110:
108:
105:
103:
100:
98:
95:
93:
90:
89:
87:
82:
77:
74:
72:
69:
67:
64:
63:
61:
56:
52:
47:
44:
40:
37:
33:
19:
2595:
2584:Bibliography
2549:
2545:
2539:
2506:
2502:
2496:
2487:
2478:
2458:
2451:
2430:
2421:
2412:
2371:
2367:
2317:
2313:
2255:
2251:
2245:
2212:
2208:
2202:
2169:
2165:
2159:
2134:
2130:
2124:
2112:. Retrieved
2097:
2090:
2057:
2053:
2043:
2031:. Retrieved
2016:
2009:
1997:. Retrieved
1992:
1982:
1970:. Retrieved
1955:
1930:. Retrieved
1915:
1908:
1875:
1871:
1865:
1840:
1836:
1830:
1821:
1807:
1787:
1780:
1768:. Retrieved
1764:
1739:. Retrieved
1719:
1715:
1705:
1654:
1650:
1644:
1591:
1587:
1577:
1558:
1552:
1499:
1495:
1485:
1469:
1449:
1442:
1423:
1417:
1400:
1396:
1362:
1358:
1239:
1236:Applications
1206:
1136:
1108:. Rutile is
1087:
1080:, both ZnS.
1055:
956:
940:
925:
921:
914:
899:
877:
869:
847:
836:
812:
808:
805:Liquid-phase
792:
765:
754:
727:
699:
662:
652:
624:
620:
617:
613:
607:
601:
597:VolmerâWeber
596:
594:
588:
555:
549:
548:
542:
541:
536:
535:
419:
356:
351:
349:
311:
310:
306:Homotopotaxy
305:
304:
294:
293:
283:Miller index
279:
274:
270:
262:
260:
250:
246:
245:
208:Zone melting
152:
58:Fundamentals
36:
2620:epitaxy.net
2137:(6): 2809.
2060:: 200â209.
1657:(32): 1â6.
1052:, Argentina
1046:pseudomorph
1015:space group
833:Solid-phase
759:(HVPE) and
757:hydride VPE
641:Vapor-phase
295:Homoepitaxy
255:crystalline
158:Flux method
2648:Categories
1664:1706.01655
1601:1703.03145
1509:1503.02806
1433:8755022987
1342:References
1124:) and the
1110:tetragonal
1074:sphalerite
1068:, both FeS
987:microcline
870:autodoping
827:centrifuge
776:evaporated
770:growth is
634:See also:
76:Nucleation
2462:. Wiley.
2404:128758902
2396:0035-7529
2350:219714821
2342:0035-7529
2288:238671328
2280:2469-9950
2237:237642245
2229:2643-6728
2194:0003-6951
2114:3 October
2082:137003113
2033:3 October
1999:3 October
1972:3 October
1932:3 October
1900:0022-0248
1857:0018-9219
1651:Nanoscale
1379:228995039
1321:Thin film
1254:monolayer
1163:magnetite
1066:marcasite
1044:Hematite
1022:unit cell
1011:triclinic
947:hexagonal
858:phosphine
819:germanium
748:â Si + 2H
605:(FM) and
580:Mechanism
516:ε
496:%
487:ε
383:−
364:ε
323:(GaN) on
261:The term
32:Epistaxis
2623:Archived
2574:22751288
2531:21952443
1697:11602229
1689:28580985
1636:28276532
1544:25757864
1291:Nano-RAM
1275:See also
1258:adsorbed
1139:hematite
1114:trigonal
1098:hematite
1078:wurtzite
1050:La Rioja
906:lattices
896:, Brazil
884:Minerals
862:diborane
675:hydrogen
655:chemical
589:Figure 1
572:such as
474:are the
341:graphene
325:sapphire
249:(prefix
84:Concepts
2554:Bibcode
2511:Bibcode
2376:Bibcode
2322:Bibcode
2260:Bibcode
2174:Bibcode
2139:Bibcode
2062:Bibcode
1880:Bibcode
1724:Bibcode
1669:Bibcode
1627:5347129
1606:Bibcode
1535:4382696
1514:Bibcode
1244:and in
1209:cations
1207:If the
1013:, with
874:diffuse
866:Dopants
815:silicon
721:â 2SiCl
703:etching
663:silicon
630:Methods
558:silicon
531:bandgap
347:(hBN).
337:iridium
263:epitaxy
247:Epitaxy
153:Epitaxy
66:Crystal
2602:
2572:
2529:
2466:
2402:
2394:
2348:
2340:
2286:
2278:
2235:
2227:
2192:
2105:
2080:
2024:
1963:
1923:
1898:
1855:
1795:
1695:
1687:
1634:
1624:
1565:
1542:
1532:
1457:
1430:
1377:
1214:charge
1198:anions
1195:oxygen
1090:rutile
1072:, and
1062:pyrite
966:NaAlSi
963:albite
932:doping
854:arsine
843:Doping
821:, and
780:vacuum
736:, and
730:silane
693:+ 4HCl
673:) and
611:(SK).
599:(VW),
420:Where
339:, and
300:doping
269:roots
133:Boules
2400:S2CID
2346:S2CID
2284:S2CID
2233:S2CID
2078:S2CID
1770:3 May
1741:3 May
1693:S2CID
1659:arXiv
1596:arXiv
1504:arXiv
1375:S2CID
1230:(111)
1226:(001)
1222:(111)
1202:(111)
1126:(001)
1118:(100)
990:KAlSi
910:atoms
894:Bahia
860:, or
850:doped
447:and
290:Types
275:taxis
267:Greek
2600:ISBN
2570:PMID
2527:PMID
2464:ISBN
2392:ISSN
2338:ISSN
2276:ISSN
2225:ISSN
2190:ISSN
2116:2017
2103:ISBN
2058:4486
2035:2017
2022:ISBN
2001:2017
1974:2017
1961:ISBN
1934:2017
1921:ISBN
1896:ISSN
1853:ISSN
1793:ISBN
1772:2022
1743:2022
1685:PMID
1632:PMID
1563:ISBN
1540:PMID
1455:ISBN
1428:ISBN
1122:axis
1076:and
1064:and
782:(10
723:2(g)
717:+ Si
715:4(g)
713:SiCl
689:â Si
687:2(g)
685:+ 2H
683:4(g)
681:SiCl
669:(or
490:<
251:epi-
2562:doi
2519:doi
2384:doi
2330:doi
2268:doi
2256:104
2217:doi
2182:doi
2147:doi
2070:doi
1888:doi
1845:doi
1732:doi
1720:110
1677:doi
1622:PMC
1614:doi
1530:PMC
1522:doi
1475:doi
1405:doi
1367:doi
1263:on
1161:on
1096:on
1092:TiO
985:on
880:).
744:SiH
719:(s)
695:(g)
691:(s)
657:or
354:Ô:
343:on
271:epi
2650::
2594:.
2568:.
2560:.
2550:14
2548:.
2525:.
2517:.
2507:13
2505:.
2486:.
2439:^
2429:.
2398:.
2390:.
2382:.
2372:85
2370:.
2358:^
2344:.
2336:.
2328:.
2318:81
2316:.
2296:^
2282:.
2274:.
2266:.
2254:.
2231:.
2223:.
2211:.
2188:.
2180:.
2170:65
2168:.
2145:.
2135:75
2133:.
2076:.
2068:.
2056:.
1991:.
1942:^
1894:.
1886:.
1876:95
1874:.
1851:.
1841:85
1839:.
1763:.
1751:^
1730:.
1718:.
1714:.
1691:.
1683:.
1675:.
1667:.
1653:.
1630:.
1620:.
1612:.
1604:.
1590:.
1586:.
1538:.
1528:.
1520:.
1512:.
1498:.
1494:.
1401:64
1399:.
1387:^
1373:.
1361:.
1349:^
1271:.
1232:.
1174:Fe
1166:Fe
1142:Fe
1100:Fe
912:.
864:.
856:,
817:,
801:.
784:Pa
732:,
327:,
319:,
2608:.
2576:.
2564::
2556::
2533:.
2521::
2513::
2490:.
2472:.
2433:.
2406:.
2386::
2378::
2352:.
2332::
2324::
2290:.
2270::
2262::
2239:.
2219::
2213:2
2196:.
2184::
2176::
2153:.
2149::
2141::
2118:.
2084:.
2072::
2064::
2037:.
2003:.
1976:.
1936:.
1902:.
1890::
1882::
1859:.
1847::
1815:.
1801:.
1774:.
1745:.
1734::
1726::
1699:.
1679::
1671::
1661::
1655:9
1638:.
1616::
1608::
1598::
1592:8
1571:.
1546:.
1524::
1516::
1506::
1500:6
1477::
1463:.
1436:.
1411:.
1407::
1381:.
1369::
1363:3
1188:4
1183:O
1179:2
1156:3
1151:O
1147:2
1106:3
1104:O
1102:2
1094:2
1070:2
1018:1
1004:8
999:O
995:3
980:8
975:O
971:3
750:2
746:4
701:(
493:9
460:s
456:a
433:f
429:a
402:f
398:a
391:s
387:a
378:f
374:a
367:=
235:e
228:t
221:v
34:.
20:)
Text is available under the Creative Commons Attribution-ShareAlike License. Additional terms may apply.
