180:, where Ti, Zr, and Hf are preferable. The amount of carbide-forming metal must be sufficient to coat at least 25% of the diamond grains, as otherwise, the bonding is insufficient, and the heat transfer between matrix and diamond grains is weak, which leads to loss of effectivity towards the level of the matrix metal alone. The material may deform at higher temperatures and must be low to prevent the formation of too thick a carbide layer that would hinder heat transfer. The volume of diamond should be higher than 30 vol.%, as a lower ratio does not provide a significant increase of thermal conductivity, and lower than 70 vol.% as a higher ratio of diamond makes thermal expansion matching to semiconductors difficult. The grains should also be surrounded with metal to avoid deformation due to different thermal expansion coefficients between diamond and metal; the carbide coating assists with this.
118:. The material shows some plasticity. High mechanical strain causes brittle failure in the diamond grains and ductile failure in the matrix. The diamond grains give the alloy a degree of surface texture; when a smooth surface is desired, the alloy can be plated and polished.
105:
layer that assists bonding, then coated with 100 nanometers of copper to avoid carbide oxidation, then compacted in a mold and infiltrated with molten copper-silver alloy. Adding 55 vol.% of diamond yields material with thermal expansion matching that of
74:
82:
114:. Copper can be used instead of copper-silver alloy, but the higher melting point may cause a partial transformation of diamond to
288:
228:
244:
210:
90:
59:
89:
project. Dymalloy is prepared from diamond powder of about 25 micrometers in size. The grains are coated by
303:
293:
20:
39:
86:
63:
43:
298:
259:, In Science and Technology Review, March 1996, Lawrence Livermore National Laboratory, p. 3
107:
102:
78:
55:
51:
232:
188:
282:
32:
269:
225:
67:
157:
141:
137:
121:
In 1996, the price for a 10×10×0.1 cm substrate was quoted as USD 200.
211:
Dymalloy: a composite material for high power density electronic components
256:
177:
173:
165:
153:
115:
94:
169:
161:
149:
111:
98:
47:
35:
129:
125:
85:. It was first researched for use in space-based electronics for the
28:
24:
124:
Similar alloys are possible with the metal phase of one or more of
184:
272:, European Patent EP0898310; filed 07/29/1998; issued 07/06/2005
145:
133:
226:
Copper-diamond composite substrates for electronic components
110:; a slightly higher amount of diamond allows matching to
245:
Diamond-copper-silver alloy developed for MCM substrates
270:
Manufacturing process of a heat sink for semiconductors
187:, with aluminium instead of copper-silver alloy and
46:can be adjusted to match other materials, e.g.,
8:
93:with 10 nanometers thick layer of alloy of
257:Developmental work continues on dymalloy
200:
83:Lawrence Livermore National Laboratory
7:
206:
204:
152:-forming metal can be selected from
73:Dymalloy was developed as part of
14:
62:for high-power and high-density
66:, where it aids with removing
1:
54:chips. It is chiefly used in
320:
91:physical vapor deposition
42:of 420 W/(m·K), and its
289:Metal matrix composites
268:Nishibayashi, Yoshiki,
183:A similar material is
21:metal matrix composite
38:. It has a very high
191:instead of diamond.
40:thermal conductivity
235:, January 25, 1995
231:2011-07-22 at the
64:multi-chip modules
31:alloy matrix with
87:Brilliant Pebbles
44:thermal expansion
311:
273:
266:
260:
254:
248:
242:
236:
219:
213:
208:
108:gallium arsenide
103:tungsten carbide
79:Sun Microsystems
56:microelectronics
52:gallium arsenide
319:
318:
314:
313:
312:
310:
309:
308:
279:
278:
277:
276:
267:
263:
255:
251:
243:
239:
233:Wayback Machine
221:Davidson, H. L
220:
216:
209:
202:
197:
189:silicon carbide
12:
11:
5:
317:
315:
307:
306:
301:
296:
291:
281:
280:
275:
274:
261:
249:
247:, July 1, 1994
237:
214:
199:
198:
196:
193:
13:
10:
9:
6:
4:
3:
2:
316:
305:
304:Chip carriers
302:
300:
297:
295:
294:Copper alloys
292:
290:
287:
286:
284:
271:
265:
262:
258:
253:
250:
246:
241:
238:
234:
230:
227:
224:
218:
215:
212:
207:
205:
201:
194:
192:
190:
186:
181:
179:
175:
171:
167:
163:
159:
155:
151:
147:
143:
139:
135:
131:
127:
122:
119:
117:
113:
109:
104:
100:
96:
92:
88:
84:
80:
76:
71:
69:
65:
61:
57:
53:
49:
45:
41:
37:
34:
30:
26:
22:
18:
264:
252:
240:
222:
217:
182:
123:
120:
101:, forming a
72:
16:
15:
60:a substrate
283:Categories
195:References
68:waste heat
158:zirconium
142:magnesium
138:aluminium
97:with 26%
229:Archived
178:chromium
174:tantalum
166:vanadium
154:titanium
116:graphite
95:tungsten
77:between
27:and 80%
17:Dymalloy
299:Diamond
170:niobium
162:hafnium
150:carbide
112:silicon
99:rhenium
48:silicon
36:diamond
23:of 20%
223:et al.
176:, and
148:. The
144:, and
130:copper
126:silver
33:type I
29:silver
25:copper
185:AlSiC
75:CRADA
19:is a
146:zinc
134:gold
81:and
50:and
58:as
285::
203:^
172:,
168:,
164:,
160:,
156:,
140:,
136:,
132:,
128:,
70:.
Text is available under the Creative Commons Attribution-ShareAlike License. Additional terms may apply.