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at the
Central Bureau of Telecommunications Technology of the German Postal Service, in 1953, it continues to influence the design of modern high-speed bipolar junction transistors.
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Early drift transistors were made by diffusing the base dopant in a way that caused a higher doping concentration near the emitter reducing towards the collector.
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Another way to speed the base transit time of this type of transistor is to vary the band gap across the base, e.g. in the SiGe BJT the base of Si
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This graded base happens automatically with the double diffused planar transistor (so they aren't usually called drift transistors).
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can be grown with η approx 0.2 by the collector and reducing to 0 near the emitter (keeping the dopant concentration constant).
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Influence of
Mobility and Lifetime Variations on Drift-Field Effects in Silicon-Junction Devices
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IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 48, NO. 11, NOVEMBER 2001
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Germanium diffused junction transistors were used by IBM in their
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93:Saturated Drift Transistor Resistor Logic
130:Fundamentals of Semiconductor Devices.
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71:Similar high speed transistors
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119:Bipolar Transistor. Chenning
156:PDF needs IEEE subscription
150:PDF needs IEEE subscription
41:bipolar junction transistor
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146:Herb’s Bipolar Transistors
50:in the base to reduce the
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37:graded base transistor
29:drift-field transistor
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175:1953 introductions
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170:Transistor types
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