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In 1974, he became ranked second in the country in the 50 and over marathon category. He spent most of the rest of his life working in childcare for infants, toddlers and young children including his grandchildren and church group. He died in 2006 at the age of 81. The cause of death was
270:(GaAs). The model explains essentially most of the materials used in semiconductor technology. The theoretical literature describing the electronics and optical responses of these semiconductors all rely heavily on this model, as does the very active field of
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IV, III-V and II-VI semiconductors. This 1957 publication is still prominent in scientific literature and textbooks more than 50 years after its discovery (the paper has about 3377 citations despite the fact that modern
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research. He published widely in scientific journals. Perhaps his best known paper was published in 1956 on a technique to calculate the structure of solids. This technique is referred to as the
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266:. Kane improved previous valence band models by adding the lowest conduction band. This model was extended later to take into account the non-parabolicity of materials such as
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Chandrasekhar, M., Cardona, M. and Kane, E. O. (1977). "INTRABAND RAMAN-SCATTERING BY FREE CARRIERS IN HEAVILY DOPED N-SI." Physical Review B 16(8): 3579-3595. (cited by 66)
686:
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Baraff, G. A., E. O. Kane and M. Schlueter (1980). "THEORY OF THE SILICON VACANCY - AN ANDERSON NEGATIVE-U SYSTEM." Physical Review B 21(12): 5662-5686. (cited by 447)
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in Murray Hill, New Jersey in 1961. He continued his semiconductor research at Bell Labs, at the interface between experimental and theoretical physics, until
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Lok C. Lew Yan Voon and Morten
Willatzen, "The k.p Method" Electronic Properties of Semiconductors, Springer, Springer-Verlag Berlin, Heidelberg, 2009.
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undercount citations for papers published before the mid-1990s). The model is now often cited via books where it is discussed, most notably in Yu's and
641:
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Kane, E. O. (1956). "ENERGY BAND STRUCTURE IN P-TYPE GERMANIUM AND SILICON." Journal of
Physics and Chemistry of Solids 1(1-2): 82-99. (cited by 721)
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Kane, E. O. and A. B. Kane (1978). "DIRECT CALCULATION OF WANNIER FUNCTIONS - SI VALENCE BANDS." Physical Review B 17(6): 2691-2704. (cited by 53)
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Kane, E. O. (1959). "THE SEMI-EMPIRICAL APPROACH TO BAND STRUCTURE." Journal of
Physics and Chemistry of Solids 8: 38-44. (cited by 28)
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Kane, E. O. (1963). "THOMAS-FERMI APPROACH TO IMPURE SEMICONDUCTOR BAND STRUCTURE." Physical Review 131(1): 79-&. (cited by 691)
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Kane, E. O. (1957). "BAND STRUCTURE OF INDIUM ANTIMONIDE." Journal of
Physics and Chemistry of Solids 1(4): 249-261. (cited by 3377)
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Kane, E. O. (1959). "ZENER TUNNELING IN SEMICONDUCTORS." Journal of
Physics and Chemistry of Solids 12(2): 181-188. (cited by 749)
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Kane, E. O. (1967). "ELECTRON SCATTERING BY PAIR PRODUCTION IN SILICON." Physical Review 159(3): 624-&. (cited by 481)
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method, Voon and
Willatzen devote several chapters to explaining Kane models. They note that Kane's quasi-degenerate
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in
Schenectady, New York. There he began contributing to the theoretical underpinnings of the then-new field of
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in his publications, was an
American physicist who established some of the basic understanding of the theory of
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Peter Y. Yu and Manuel
Cardona, "Fundamentals of Semiconductors, Physics and Materials Properties, Springer,
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EO Kane and AB Kane, "Direct calculation of
Wannier Functions; Si valence bands, Physical Review B, 1978.
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Kane, E. O. (1961). "THEORY OF TUNNELING." Journal of Applied Physics 32(1): 83-&. (cited by 778)
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to study towards his PhD in physics, which was awarded in 1953 on an experimental project related to
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that are now used in consumer and other electronics. He was one of the main developers of the
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of the structure of energy bands of semiconductors. The Kane Hamiltonian describes the
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Kane, E. O. (1956). "Energy band structure in p-type germanium and silicon".
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Kane, E. O. (January 1, 1966), Willardson, R. K.; Beer, Albert C. (eds.),
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in California and then moved to the Theoretical Physics Department in
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132:, and interrupted his education to serve in the army during
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Kane, E. O. (1957). "Band structure of indium antimonide".
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perturbation method to determine what became known as the
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History of science and technology in the United States
262:approach worked well for semiconductors with small
92:, was a doctor who was so enamoured of the idea of
274:phenomena in size-limited crystalline structures.
112:. His father, Thomas Leiper Kane, died in 1933 of
116:. He later moved with his mother and siblings to
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33:(December 23, 1924 – March 23, 2006), known as
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627:United States Army personnel of World War II
48:which is used to calculate band structures.
194:. They lived together for over 40 years in
166:Kane left General Electric in 1959 to join
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510:Journal of Physics and Chemistry of Solids
466:Journal of Physics and Chemistry of Solids
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438:Bowen, Norman R.; Zobell, Albert L.; Jr.
383:"Physics Today Daily Edition Departments"
359:Allegheny National Forest Visitors Bureau
687:Fellows of the American Physical Society
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120:, where he stayed through high school.
108:Kane was born on December 23, 1924 in
440:"General Thomas L. Kane: the Pioneer"
190:Kane married Anne Bassler in 1950 in
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682:Military personnel from Pennsylvania
662:People from Union County, New Jersey
150:General Electric Research Laboratory
584:(Print) 978-3-642-00710-1 (Online)
563:Citation statistics retrieved from
96:that he surgically removed his own
657:People from Daytona Beach, Florida
396:"Obituary of Evan O' Neill Kane".
178:was broken up. He then worked for
163:for band structure calculations.
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425:"Bradley & Son Funeral Homes"
234:in sp bonded semiconductors: the
148:technology. Kane then joined the
88:. Kane's grandfather, also named
72:General. He also helped with the
642:20th-century American physicists
249:Fundamentals of Semiconductors
140:in 1948, and went directly to
1:
334:Semiconductors and Semimetals
128:Kane was an undergraduate at
652:Scientists from Pennsylvania
530:10.1016/0022-3697(57)90013-6
486:10.1016/0022-3697(56)90014-2
232:valence and conduction bands
677:United States Army soldiers
632:Princeton University alumni
444:www.churchofjesuschrist.org
330:"Chapter 3 The k •p Method"
202:complications secondary to
100:to show its effectiveness.
76:and successfully urged the
56:Kane's great, great uncle,
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210:. He had three children.
204:myeloproliferative disease
196:New Providence, New Jersey
182:until he retired in 1984.
80:not to go to war with the
64:, who founded the town of
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637:Cornell University alumni
599:10.1007/978-3-540-92872-0
647:Semiconductor physicists
192:Lancaster, Pennsylvania
78:Buchanan Administration
667:People of the Cold War
118:Daytona Beach, Florida
278:Selected publications
254:In their book on the
16:For the surgeon, see
355:"Kane, Pennsylvania"
138:Princeton University
136:. He graduated from
130:Princeton University
74:Underground Railroad
522:1957JPCS....1..249K
478:1956JPCS....1...82K
260:perturbation theory
46:perturbation theory
567:, 28 February 2017
142:Cornell University
110:Kane, Pennsylvania
70:American Civil War
66:Kane, Pennsylvania
62:Thomas Leiper Kane
25:American physicist
582:978-3-642-00709-5
406:10.1063/pt.4.2301
172:Bell Laboratories
90:Evan O'Neill Kane
31:Evan O'Neill Kane
18:Evan O'Neill Kane
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94:local anesthesia
58:Elisha Kent Kane
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134:World War II
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622:2006 deaths
617:1924 births
146:vacuum tube
611:Categories
449:August 15,
364:August 15,
340:August 15,
315:References
224:Kane model
214:Kane model
35:E. O. Kane
264:band gaps
247:'s book,
114:pneumonia
68:, was an
400:. 2013.
180:BellCore
176:AT&T
98:appendix
52:Ancestry
518:Bibcode
474:Bibcode
272:quantum
245:Cardona
82:Mormons
580:
161:method
124:Career
236:group
578:ISBN
451:2024
366:2024
342:2024
206:and
104:Life
595:doi
526:doi
482:doi
402:doi
256:k·p
226:or
220:k·p
159:k·p
84:in
44:k·p
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