Knowledge (XXG)

Hans-Joachim Queisser

Source đź“ť

42: 248:, where he worked on crystal growth, epitaxy, diffusion, lattice defects, junction properties and solar cells. It was during this time that he and Shockley calculated the maximal theoretical efficiency of silicon solar cells to be around 31%. He and his co-worker Richard Finch first identified oxygen-induced stacking faults and achieved the first 496: 511: 501: 526: 516: 506: 531: 465: 283: 126: 357: 205:
to work on power plants and asked his fiancée to join him. She wanted to return to Germany, and Hans Joachim was born shortly after their return in 1931, in
536: 221:
through an apprenticeship program and working as a technician at a research institute in Berlin. However, he instead applied for a scholarship in the
521: 481: 278:
device. Modifications of the basic design represent practically every LED in existence today. In 1966, he left Bell to become a professor at the
299: 399: 460: 241: 118: 249: 541: 182: 101: 279: 122: 230: 91: 303: 245: 307: 146: 491: 448: 486: 271: 226: 218: 87: 83: 234: 194: 174: 456: 213:
during the air raid in 1945 and states that he survived "barely". His father was sent to the
382: 260: 133: 332: 264: 41: 452: 275: 475: 421: 222: 202: 229:
for 1951 and 1952. He returned to Germany and obtained his Ph.D. in physics at the
214: 369:
William Shockley and Hans J. Queisser, "Detailed Balance Limit of Efficiency of
267:. It was during this time that he invented a high-power luminescent diode, an 178: 17: 468:, presentation by Queisser on the history of Silicon Valley, with materials. 287: 256: 497:
Officers Crosses of the Order of Merit of the Federal Republic of Germany
268: 150: 210: 198: 170: 72: 386: 206: 166: 68: 252:
on semiconductors with J. Washburn and G. Thomas at UC Berkeley.
240:
After graduating in Göttingen, Queisser accepted a job at the
185:, which is now considered the key contribution in this field. 512:
Members of the German National Academy of Sciences Leopoldina
451:, Queisser's autobiographical work on the early history of 274:(LED) that now forms the basis of almost every household 290:. He served in this role until his retirement in 1998. 502:
Recipients of the Order of Merit of Baden-WĂĽrttemberg
177:. He is best known for co-authoring the 1961 work on 142: 132: 114: 97: 79: 51: 32: 193:Queisser was born in Berlin and his father was a 46:Hans-Joachim Queisser in Bonn on January 20, 1995 282:. In 1970, he became a founding director of the 217:after the war, and Queisser wanted to enter the 527:Academic staff of Goethe University Frankfurt 284:Max Planck Institute for Solid State Research 127:Max Planck Institute for Solid State Research 8: 360:, Computer History Museum, 27 February 2006. 40: 29: 517:Presidents of the German Physical Society 352: 350: 327: 325: 323: 181:that detailed what is today known as the 507:Fellows of the American Physical Society 27:German solid state physicist (born 1931) 402:. German Academy of Sciences Leopoldina 381:, Volume 32 (March 1961), pp. 510–519; 319: 300:German Academy of Sciences Leopoldina 7: 532:Humboldt University of Berlin alumni 25: 233:in 1958 under the supervision of 466:"Bringing Silicon to the Valley" 302:in 1994. He was a Fellow of the 298:Queisser became a member of the 250:transmission electron microscopy 449:"The Conquest of the Microchip" 242:Shockley Transistor Corporation 119:Shockley Transistor Corporation 537:University of Göttingen alumni 522:Max Planck Institute directors 482:20th-century German physicists 358:"Oral History of Han Queisser" 201:. In 1928 he travelled to the 1: 255:Queisser left Shockley for 558: 379:Journal of Applied Physics 306:. He was president of the 335:. Computer History Museum 304:American Physical Society 246:Mountain View, California 156: 107: 39: 225:and was accepted to the 400:"Hans-Joachim Queisser" 377:Junction Solar Cells", 310:between 1976 and 1977. 308:German Physical Society 280:University of Frankfurt 231:University of Göttingen 183:Shockley–Queisser limit 123:University of Frankfurt 102:Shockley–Queisser limit 92:University of Göttingen 542:Scientists from Berlin 175:solid-state physicist 163:Hans-Joachim Queisser 34:Hans-Joachim Queisser 272:light emitting diode 259:in 1964, working on 227:University of Kansas 219:University of Berlin 189:Education and career 147:Horst Ludwig Störmer 88:University of Kansas 84:University of Berlin 195:mechanical engineer 165:(born 6 July 1931, 387:10.1063/1.1736034 294:Honors and awards 160: 159: 143:Doctoral students 109:Scientific career 16:(Redirected from 549: 436: 435: 433: 432: 418: 412: 411: 409: 407: 396: 390: 367: 361: 354: 345: 344: 342: 340: 329: 261:gallium arsenide 134:Doctoral advisor 65: 61: 59: 44: 30: 21: 557: 556: 552: 551: 550: 548: 547: 546: 472: 471: 445: 440: 439: 430: 428: 422:"Hans Queisser" 420: 419: 415: 405: 403: 398: 397: 393: 368: 364: 356:Craig Addison, 355: 348: 338: 336: 333:"Hans Queisser" 331: 330: 321: 316: 296: 265:optoelectronics 191: 149: 125: 121: 90: 86: 75: 66: 63: 57: 55: 47: 35: 28: 23: 22: 15: 12: 11: 5: 555: 553: 545: 544: 539: 534: 529: 524: 519: 514: 509: 504: 499: 494: 489: 484: 474: 473: 470: 469: 463: 453:Silicon Valley 444: 443:External links 441: 438: 437: 413: 391: 362: 346: 318: 317: 315: 312: 295: 292: 276:remote control 190: 187: 158: 157: 154: 153: 144: 140: 139: 136: 130: 129: 116: 112: 111: 105: 104: 99: 98:Known for 95: 94: 81: 77: 76: 67: 53: 49: 48: 45: 37: 36: 33: 26: 24: 14: 13: 10: 9: 6: 4: 3: 2: 554: 543: 540: 538: 535: 533: 530: 528: 525: 523: 520: 518: 515: 513: 510: 508: 505: 503: 500: 498: 495: 493: 492:Living people 490: 488: 485: 483: 480: 479: 477: 467: 464: 462: 461:0-674-16297-8 458: 454: 450: 447: 446: 442: 427: 423: 417: 414: 401: 395: 392: 388: 384: 380: 376: 372: 366: 363: 359: 353: 351: 347: 334: 328: 326: 324: 320: 313: 311: 309: 305: 301: 293: 291: 289: 285: 281: 277: 273: 270: 266: 262: 258: 253: 251: 247: 243: 238: 236: 235:Rudolf Hilsch 232: 228: 224: 223:United States 220: 216: 212: 208: 204: 203:United States 200: 196: 188: 186: 184: 180: 176: 172: 168: 164: 155: 152: 148: 145: 141: 138:Rudolf Hilsch 137: 135: 131: 128: 124: 120: 117: 113: 110: 106: 103: 100: 96: 93: 89: 85: 82: 78: 74: 70: 64:(age 93) 54: 50: 43: 38: 31: 19: 18:Hans Queisser 429:. Retrieved 425: 416: 404:. Retrieved 394: 378: 374: 370: 365: 337:. Retrieved 297: 254: 239: 215:Soviet Union 209:. He was in 192: 162: 161: 115:Institutions 108: 62:July 6, 1931 487:1931 births 339:January 17, 179:solar cells 476:Categories 431:2023-01-06 314:References 58:1931-07-06 288:Stuttgart 257:Bell Labs 80:Education 269:infrared 151:Karl Leo 211:Dresden 199:Siemens 173:) is a 171:Germany 73:Germany 459:  406:1 June 207:Berlin 167:Berlin 69:Berlin 457:ISBN 408:2021 341:2017 263:for 197:for 52:Born 426:CHM 383:doi 286:at 244:in 478:: 455:, 424:. 349:^ 322:^ 237:. 169:, 71:, 60:) 434:. 410:. 389:. 385:: 375:n 373:- 371:p 343:. 56:( 20:)

Index

Hans Queisser

Berlin
Germany
University of Berlin
University of Kansas
University of Göttingen
Shockley–Queisser limit
Shockley Transistor Corporation
University of Frankfurt
Max Planck Institute for Solid State Research
Doctoral advisor
Horst Ludwig Störmer
Karl Leo
Berlin
Germany
solid-state physicist
solar cells
Shockley–Queisser limit
mechanical engineer
Siemens
United States
Berlin
Dresden
Soviet Union
University of Berlin
United States
University of Kansas
University of Göttingen
Rudolf Hilsch

Text is available under the Creative Commons Attribution-ShareAlike License. Additional terms may apply.

↑