737:. This was followed by demonstration of operation of the device at elevated temperatures by Baliga in 1985. Successful efforts to suppress the latch-up of the parasitic thyristor and the scaling of the voltage rating of the devices at GE allowed the introduction of commercial devices in 1983, which could be used for a wide variety of applications. The electrical characteristics of GE's device, IGT D94FQ/FR4, were reported in detail by Marvin W. Smith in the proceedings of PCI April 1984. Smith showed in Fig. 12 of the proceedings that turn-off above 10 amperes for gate resistance of 5 kΩ and above 5 amperes for gate resistance of 1 kΩ was limited by switching safe operating area although IGT D94FQ/FR4 was able to conduct 40 amperes of collector current. Smith also stated that the switching safe operating area was limited by the latch-up of the parasitic thyristor.
823:"Becke’s device" and is described in US Patent 4364073. The difference between "Plummer’s device" and "Becke’s device" is that "Plummer’s device" has the mode of thyristor action in its operation range, but "Becke’s device" never has the mode of thyristor action in its entire operation range. This is a critical point, because the thyristor action is the same as so-called "latch-up". Latch-up is the main cause of fatal device failure. Thus, theoretically, "Plummer’s device" never realizes a rugged or strong power device which has a large safe operating area. The large safe operating area can be achieved only after latch-up is completely suppressed and eliminated in the entire device operation range. However, the Becke's patent (US Patent 4364073) did not disclose any measures to realize actual devices.
741:
IGBTs were directly connected without any loads across a 600 V constant-voltage source and were switched on for 25 microseconds. The entire 600 V was dropped across the device, and a large short-circuit current flowed. The devices successfully withstood this severe condition. This was the first demonstration of so-called "short-circuit-withstanding-capability" in IGBTs. Non-latch-up IGBT operation was ensured, for the first time, for the entire device operation range. In this sense, the non-latch-up IGBT proposed by Hans W. Becke and Carl F. Wheatley was realized by A. Nakagawa et al. in 1984. Products of non-latch-up IGBTs were first commercialized by
623:
1114:
994:
rating of both MOSFET and IGBT devices increases, the depth of the n- drift region must increase and the doping must decrease, resulting in roughly square relationship decrease in forward conduction versus blocking voltage capability of the device. By injecting minority carriers (holes) from the collector p+ region into the n- drift region during forward conduction, the resistance of the n- drift region is considerably reduced. However, this resultant reduction in on-state forward voltage comes with several penalties:
1196:
1159:
38:
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latch-up caused the fatal device failure. IGBTs had, thus, been established when the complete suppression of the latch-up of the parasitic thyristor was achieved. Later, Hans W. Becke and Carl F. Wheatley developed a similar device claiming non-latch-up. They patented the device in 1980, referring to it as "power MOSFET with an anode region" for which "no thyristor action occurs under any device operating conditions".
330:
1058:, and other programs. To simulate an IGBT circuit, the device (and other devices in the circuit) must have a model which predicts or simulates the device's response to various voltages and currents on their electrical terminals. For more precise simulations the effect of temperature on various parts of the IGBT may be included with the simulation. Two common methods of modeling are available:
1222:
874:(GTOs). This excellent feature of the IGBT had suddenly emerged when the non-latch-up IGBT was established in 1984 by solving the problem of so-called "latch-up", which is the main cause of device destruction or device failure. Before that, the developed devices were very weak and were easy to be destroyed because of "latch-up". Therefore, the inventor of actual devices is Akio Nakagawa.
80:
666:
654:(MOSFET) was also invented at Bell Labs. In 1957 Frosch and Derick published their work on building the first silicon dioxide transistors, including a NPNP transistor, the same structure as the IGBT. The basic IGBT mode of operation, where a pnp transistor is driven by a MOSFET, was first proposed by K. Yamagami and Y. Akagiri of
843:
MOSFET with an anode region". This patent has been called "the seminal patent of the insulated gate bipolar transistor". The patent claimed that "no thyristor action occurs under any device operating conditions". This substantially means that the device exhibits non-latch-up IGBT operation over the entire device operation range.
701:(GTOs). This excellent feature of the IGBT had suddenly emerged when the non-latch-up IGBT was established in 1984 by solving the problem of so-called "latch-up", which is the main cause of device destruction or device failure. Before that, the developed devices were very weak and were easy to be destroyed because of "latch-up".
740:
Complete suppression of the parasitic thyristor action and the resultant non-latch-up IGBT operation for the entire device operation range was achieved by A. Nakagawa et al. in 1984. The non-latch-up design concept was filed for US patents. To test the lack of latch-up, the prototype 1200 V
1101:
The wearout failures mainly include bias temperature instability (BTI), hot carrier injection (HCI), time-dependent dielectric breakdown (TDDB), electromigration (ECM), solder fatigue, material reconstruction, corrosion. The overstress failures mainly include electrostatic discharge (ESD), latch-up,
846:
In actual devices, IGT developed by Baliga is not IGBT, because its operation range is limited by the latch-up of the parasitic thyristor. Marvin W. Smith stated that "IGT is not intended to replace bipolar transistors or power MOSFETs" in the
Section of SUMMARY in the proceedings of PCI April 1984.
842:
In 1978 J. D. Plummer and B. Scharf patented an NPNP transistor device combining MOS and bipolar capabilities for power control and switching. Later, Hans W. Becke and Carl F. Wheatley invented a similar device, for which they filed a patent application in 1980, and which they referred to as "power
1024:
The on-state forward voltage drop in IGBTs behaves very differently from power MOSFETS. The MOSFET voltage drop can be modeled as a resistance, with the voltage drop proportional to current. By contrast, the IGBT has a diode-like voltage drop (typically of the order of 2V) increasing only with the
673:
In 1978 J. D. Plummer and B. Scharf patented a NPNP transistor device combining MOS and bipolar capabilities for power control and switching. The development of IGBT was characterized by the efforts to completely suppress the thyristor operation or the latch-up in the four-layer device because the
993:
An IGBT features a significantly lower forward voltage drop compared to a conventional MOSFET in higher blocking voltage rated devices, although MOSFETS exhibit much lower forward voltage at lower current densities due to the absence of a diode Vf in the IGBT's output BJT. As the blocking voltage
854:
In the early development stage of IGBT, all the researchers tried to increase the latch-up current itself in order to suppress the latch-up of the parasitic thyristor. However, all these efforts failed because IGBT could conduct enormously large current. Successful suppression of the latch-up was
681:
In the early development stage of IGBT, all the researchers tried to increase the latch-up current itself in order to suppress the latch-up of the parasitic thyristor. However, all these efforts failed because IGBT could conduct enormously large current. Successful suppression of the latch-up was
830:
commercialized "non-latch-up IGBT" in 1985. Stanford
University insisted in 1991 that Toshiba's device infringed US Patent RE33209 of "Plummer’s device". Toshiba answered that "non-latch-up IGBTs" never latched up in the entire device operation range and thus did not infringe Plummer's US Patent
732:
community to be severely restricted by its slow switching speed and latch-up of the parasitic thyristor structure inherent within the device. However, it was demonstrated by Baliga and also by A. M. Goodman et al. in 1983 that the switching speed could be adjusted over a broad range by
850:
A. Nakagawa et al. invented the device design concept of non-latch-up IGBTs in 1984. The invention is characterized by the device design setting the device saturation current below the latch-up current, which triggers the parasitic thyristor. This invention realized complete suppression of the
822:
On the other hand, Hans W. Becke proposed, in 1980, another device in which the thyristor action is eliminated under any device operating conditions although the basic device structure is the same as that proposed by J. D. Plummer. The device developed by Hans W. Becke is referred here as
677:
A. Nakagawa et al. invented the device design concept of non-latch-up IGBTs in 1984. The invention is characterized by the device design setting the device saturation current below the latch-up current, which triggers the parasitic thyristor. This invention realized complete suppression of the
855:
made possible by limiting the maximal collector current, which IGBT could conduct, below the latch-up current by controlling/reducing the saturation current of the inherent MOSFET. This was the concept of non-latch-up IGBT. "Becke’s device" was made possible by the non-latch-up IGBT.
682:
made possible by limiting the maximal collector current, which IGBT could conduct, below the latch-up current by controlling/reducing the saturation current of the inherent MOSFET. This was the concept of non-latch-up IGBT. "Becke’s device" was made possible by the non-latch-up IGBT.
1003:) is placed in anti-parallel with the IGBT to conduct current in the opposite direction. The penalty isn't overly severe because at higher voltages, where IGBT usage dominates, discrete diodes have a significantly higher performance than the body diode of a MOSFET.
1086:. Hefner's model is fairly complex but has shown good results. Hefner's model is described in a 1988 paper and was later extended to a thermo-electrical model which include the IGBT's response to internal heating. This model has been added to a version of the
168:
well into the ultrasonic-range frequencies, which are at least ten times higher than audio frequencies handled by the device when used as an analog audio amplifier. As of 2010, the IGBT was the second most widely used power transistor, after the
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RE33209. Stanford
University never responded after Nov. 1992. Toshiba purchased the license of Becke's patent but never paid any license fee for "Plummer’s device". Other IGBT manufacturers also paid the license fee for Becke's patent.
2301:
1195:
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The additional PN junction blocks reverse current flow. This means that unlike a MOSFET, IGBTs cannot conduct in the reverse direction. In bridge circuits, where reverse current flow is needed, an additional diode (called a
1029:
of the current. Additionally, MOSFET resistance is typically lower for smaller blocking voltages, so the choice between IGBTs and power MOSFETS will depend on both the blocking voltage and current involved in a particular
646:. The junction version known as the bipolar junction transistor (BJT), invented by Shockley in 1948. Later the similar thyristor was proposed by William Shockley in 1950 and developed in 1956 by power engineers at
818:
In 1978 J. D. Plummer and B. Scharf patented a NPNP transistor device combining MOS and bipolar capabilities for power control and switching. The device proposed by
Plummer is referred here as "Plummer’s device".
1113:
1006:
The reverse bias rating of the N-drift region to collector P+ diode is usually only of tens of volts, so if the circuit application applies a reverse voltage to the IGBT, an additional series diode must be
858:
The IGBT is characterized by its ability to simultaneously handle a high voltage and a large current. The product of the voltage and the current density that the IGBT can handle reached more than 5
786:
and excellent ruggedness and tolerance of overloads. Extremely high pulse ratings of second- and third-generation devices also make them useful for generating large power pulses in areas including
685:
The IGBT is characterized by its ability to simultaneously handle a high voltage and a large current. The product of the voltage and the current density that the IGBT can handle reached more than 5
802:. High pulse ratings and low prices on the surplus market also make them attractive to the high-voltage hobbyists for controlling large amounts of power to drive devices such as solid-state
651:
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1010:
The minority carriers injected into the N-drift region take time to enter and exit or recombine at turn-on and turn-off. This results in longer switching times, and hence higher
102:
primarily forming an electronic switch. It was developed to combine high efficiency with fast switching. It consists of four alternating layers (NPNP) that are controlled by a
1355:
1034:
In general, high voltage, high current and lower frequencies favor the IGBT while low voltage, medium current and high switching frequencies are the domain of the MOSFET.
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The first silicon dioxide transistor was built by Frosch and Derick between 1955 and 1957. One of the devices was an NPNP transistor, the same structure as the IGBT.
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parasitic thyristor action, for the first time, because the maximal collector current was limited by the saturation current and never exceeded the latch-up current.
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parasitic thyristor action, for the first time, because the maximal collector current was limited by the saturation current and never exceeded the latch-up current.
2533:
2414:
Patil, N.; Celaya, J.; Das, D.; Goebel, K.; Pecht, M. (June 2009). "Precursor
Parameter Identification for Insulated Gate Bipolar Transistor (IGBT) Prognostics".
1913:
Nakagawa, A.; Yamaguchi, Y.; Watanabe, K.; Ohashi, H.; Kurata, M. (1985). "Experimental and numerical study of non-latch-up bipolar-mode MOSFET characteristics".
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and burns the device out at high currents). Second-generation devices were much improved. The current third-generation IGBTs are even better, with speed rivaling
728:
A similar paper was also submitted by J. P. Russel et al. to IEEE Electron Device Letter in 1982. The applications for the device were initially regarded by the
2167:
Goodman, A.M.; Russell, J. P.; Goodman, L. A.; Nuese, C. J.; Neilson, J. M. (1983). "Improved COMFETs with fast switching speed and high-current capability".
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of the IGBT. The IGBT is the most rugged and the strongest power device yet developed, affording ease of use and so displacing bipolar transistors and even
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of the IGBT. The IGBT is the most rugged and the strongest power device yet developed, affording ease of use and so displacing bipolar transistors and even
714:
1136:
752:. It was demonstrated that the product of the operating current density and the collector voltage exceeded the theoretical limit of bipolar transistors, 2
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970:. Large IGBT modules typically consist of many devices in parallel and can have very high current-handling capabilities in the order of hundreds of
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Baliga and Smith even recommended to use snubber circuits to prevent destruction of IGT in the article of EDN, published on
September 29, 1983.
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1947:
Baliga, B.J.; Adler, M. S.; Gray, P. V.; Love, R. P.; Zommer, N. (1982). "The insulated gate rectifier (IGR): A new power switching device".
1626:
1601:
906:, after the power MOSFET. The IGBT accounts for 27% of the power transistor market, second only to the power MOSFET (53%), and ahead of the
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2279:
2746:
2526:
1805:
Nakagawa, A.; Ohashi, H.; Kurata, M.; Yamaguchi, H.; Watanabe, K. (1984). "Non-latch-up 1200V 75A bipolar-mode MOSFET with large ASO".
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The insulating material is typically made of solid polymers, which have issues with degradation. There are developments that use an
2345:
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Hefner, A.R.; Diebolt, D.M. (September 1994). "An experimentally verified IGBT model implemented in the Saber circuit simulator".
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2596:
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Nakagawa, A.; Yamaguchi, Y.; Watanabe, K.; Ohashi, H. (1987). "Safe operating area for 1200-V nonlatchup bipolar-mode MOSFET's".
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et al. in 1982. The first experimental demonstration of a practical discrete vertical IGBT device was reported by Baliga at the
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2716:
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2519:
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Russell, J.P.; Goodman, A. M.; Goodman, L.A.; Neilson, J. M. (1983). "The COMFET—A new high conductance MOS-gated device".
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866:
10 W/cm, of existing power devices such as bipolar transistors and power MOSFETs. This is a consequence of the large
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10 W/cm, of existing power devices such as bipolar transistors and power MOSFETs. This is a consequence of the large
345:. This additional p+ region creates a cascade connection of a PNP bipolar junction transistor with the surface n-channel
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2299:, Becke, Hans W. & Jr, Carl F. Wheatley, "Power MOSFET with an anode region", issued 1982-12-14
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Once the non-latch-up capability was achieved in IGBTs, it was found that IGBTs exhibited very rugged and a very large
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IGBT module (IGBTs and freewheeling diodes) with a rated current of 1200 A and a maximum voltage of 3300 V
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1428:"A High Precision On-Line Detection Method for IGBT Junction Temperature Based on Stepwise Regression Algorithm"
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137:, trains, variable-speed refrigerators, and air conditioners, as well as lamp ballasts, arc-welding machines,
130:
118:
1772:, Power MOSFET with an Anode Region, issued December 14, 1982 to Hans W. Becke and Carl F. Wheatley.
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Product of the Year Award: "Insulated Gate
Transistor", General Electric Company, Electronics Products, 1983.
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A. Nakagawa, H. Ohashi, Y. Yamaguchi, K. Watanabe and T. Thukakoshi, "Conductivity modulated MOSFET",
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The first-generation IGBTs of the 1980s and early 1990s were prone to failure through effects such as
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A. Nakagawa, H. Ohashi, Y. Yamaguchi, K. Watanabe and T. Thukakoshi, "Conductivity modulated MOSFET"
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Since it is designed to turn on and off rapidly, the IGBT can synthesize complex waveforms with
2198:
Baliga, B. Jayant (1985). "Temperature behavior of insulated gate transistor characteristics".
1751:, Plummer, James D., "Monolithic semiconductor switching device", issued 1990-05-01
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Practical devices capable of operating over an extended current range were first reported by
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An insulated-gate bipolar transistor combining features from bipolar transistors and MOSFETs
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1082:. An alternative physics-based model is the Hefner model, introduced by Allen Hefner of the
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as a switch in a single device. The IGBT is used in medium- to high-power applications like
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Larger die size, can be manufactured as monolithic devices up to 6" (15 cm) in diameter
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2024:
The IGBT Device: Physics, Design and
Applications of the Insulated Gate Bipolar Transistor
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341:, except the n+ drain is replaced with a p+ collector layer, thus forming a vertical PNP
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Cross-section of a typical IGBT showing internal connection of MOSFET and bipolar device
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The failure mechanisms of IGBTs includes overstress (O) and wearout(wo) separately.
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1978 IEEE International Solid-State
Circuits Conference. Digest of Technical Papers
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Detail of the inside of a
Mitsubishi Electric CM600DU-24NFH IGBT module rated for
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simulates IGBTs using a macromodel that combines an ensemble of components like
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commercialized Baliga's IGBT device the same year. Baliga was inducted into the
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An IGBT cell is constructed similarly to an n-channel vertical-construction
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Wintrich, Arendt; Nicolai, Ulrich; Tursky, Werner; Reimann, Tobias (2015).
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2100:
884:
List of MOSFET applications § Insulated-gate bipolar transistor (IGBT)
774:(in which the device will not turn off as long as current is flowing) and
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The bipolar point-contact transistor was invented in December 1947 at the
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Diagram of NPNP transistor made by Frosch and Derrick at Bell Labs, 1957
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action is permitted in the entire device operation range. It is used in
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1647:"Surface Protection and Selective Masking during Diffusion in Silicon"
1621:. Berlin, Heidelberg: Springer-Verlag Berlin Heidelberg. p. 321.
1519:
1504:"Surface Protection and Selective Masking during Diffusion in Silicon"
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1978:
Shenai, K. (2015). "The Invention and Demonstration of the IGBT ".
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Several IGBT manufacturers paid the license fee of Becke's patent.
3538:
3449:
3208:
2981:
2774:
2636:
2631:
2122:
Baliga, B.J. (1983). "Fast-switching insulated gate transistors".
1067:
1051:
977:
889:
664:
328:
1712:
Scharf, B.; Plummer, J. (1978). "A MOS-controlled triac device".
113:
Although the structure of the IGBT is topologically similar to a
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2320:
Innovation Hall of Fame at A. James Clark School of Engineering
1787:
Innovation Hall of Fame at A. James Clark School of Engineering
1102:
avalanche, secondary breakdown, wire-bond liftoff and burnout.
946:
with the high-current and low-saturation-voltage capability of
121:), the thyristor action is completely suppressed, and only the
2053:"NIHF Inductee Bantval Jayant Baliga Invented IGBT Technology"
1322:
International Journal of Engineering Research & Technology
1765:
1763:
794:, where they are starting to supersede older devices such as
2346:"Power Transistor Market Will Cross $ 13.0 Billion in 2011"
942:
The IGBT combines the simple gate-drive characteristics of
2240:
2238:
1908:
1906:
1904:
1902:
767:
to improve manufacturing and reduce the voltage required.
377:
A four-layer semiconductor device with a P-N-P-N structure
2276:"Ion Gel as a Gate Insulator in Field Effect Transistors"
1942:
1940:
1316:
G.c, Mahato; Niranjan; Abu, Waquar Aarif (2018-04-24).
778:(in which a localized hotspot in the device goes into
745:
in 1985. This was the real birth of the present IGBT.
421:
Reverse blocking, forward blocking, forward conducting
2248:, PCI April 1984 PROCEEDINGS, pp. 121–131, 1984.
1834:
1832:
349:. The whole structure comprises a four layered NPNP.
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As of 2010, the IGBT is the second most widely used
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164:. In switching applications modern devices feature
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1373:"insulated-gate bipolar transistor (IGBT) | JEDEC"
1302:https://www.onsemi.com/pub/Collateral/HBD871-D.PDF
1534:"1947: Invention of the Point-Contact Transistor"
652:metal–oxide–semiconductor field-effect transistor
501:Smaller die size, often paralleled in a package
490:Suitable for high frequencies, typically higher
2259:US Patent No. 6025622 (Feb. 15, 2000)
1840:US Patent No. 6025622 (Feb. 15, 2000)
1208:, showing the IGBT dies and freewheeling diodes
981:. These IGBTs can control loads of hundreds of
2465:(2nd Revised ed.). Germany: ISLE Verlag.
1354:: CS1 maint: DOI inactive as of August 2024 (
1084:National Institute of Standards and Technology
2527:
1679:Power Devices for Efficient Energy Conversion
1559:"1948: Conception of the Junction Transistor"
862:10 W/cm, which far exceeded the value, 2
689:10 W/cm, which far exceeded the value, 2
8:
2246:"APPLICATIONS OF INSULATED GATE TRANSISTORS"
1426:Shao, Lingfeng; Hu, Yi; Xu, Guoqing (2020).
1142:Opened IGBT module with four IGBTs (half of
487:Suitable for line frequency, typically lower
30:
2261:, No. 5086323 (Feb. 4, 1992) and
2169:1983 International Electron Devices Meeting
1949:1982 International Electron Devices Meeting
1915:1985 International Electron Devices Meeting
1842:, No. 5086323 (Feb. 4, 1992) and
1807:1984 International Electron Devices Meeting
715:IEEE International Electron Devices Meeting
2557:
2534:
2520:
2512:
1676:Majumdar, Gourab; Takata, Ikunori (2018).
954:for the control input and a bipolar power
36:
1586:Technical Memorandum of Bell Laboratories
1451:
1042:Circuits with IGBTs can be developed and
1582:"Silicon-Silicon Dioxide Surface Device"
1400:"IGBT Structure | About IGBTs | TechWeb"
621:
356:
175:
2459:Application Manual Power Semiconductors
1291:
1109:
512:Suitable for medium-power applications
2373:IEEE Transactions on Power Electronics
1651:Journal of The Electrochemical Society
1508:Journal of the Electrochemical Society
1347:
358:Difference between thyristor and IGBT
29:
2291:
2289:
1865:IEEE Transactions on Electron Devices
1743:
1741:
1739:
1707:
1705:
1703:
1640:
1638:
1487:Difference Between IGBT and Thyristor
1256:Junction-gate field-effect transistor
950:. The IGBT combines an isolated-gate
495:Die size and paralleling requirements
435:Combined bipolar and MOSFET features
353:Difference between thyristor and IGBT
7:
2966:Three-dimensional integrated circuit
2263:No. 4672407 (Jun. 9, 1987)
1844:No. 4672407 (Jun. 9, 1987)
1619:History of Semiconductor Engineering
1421:
1419:
1394:
1392:
1367:
1365:
1311:
1309:
1297:
1295:
509:Suitable for high-power applications
2747:Programmable unijunction transistor
662:S47-21739, which was filed in 1968.
2648:Multi-gate field-effect transistor
25:
2626:Insulated-gate bipolar transistor
1645:Frosch, C. J.; Derick, L (1957).
1502:Frosch, C. J.; Derick, L (1957).
914:(9%). The IGBT is widely used in
611:High-speed switching, efficiency
523:Requires continuous gate voltage
432:Coupled transistors (PNP and NPN)
92:insulated-gate bipolar transistor
31:Insulated-gate bipolar transistor
2870:Heterostructure barrier varactor
2597:Chemical field-effect transistor
2416:IEEE Transactions on Reliability
1220:
1194:
1175:
1157:
1135:
1112:
669:Static characteristic of an IGBT
160:in sound systems and industrial
78:
2918:Mixed-signal integrated circuit
2058:National Inventors Hall of Fame
1980:IEEE Power Electronics Magazine
1318:"Analysis on IGBT Developments"
1182:Small IGBT module, rated up to
1164:Infineon IGBT Module rated for
725:for the invention of the IGBT.
723:National Inventors Hall of Fame
2316:"C. Frank Wheatley, Jr., BSEE"
1783:"C. Frank Wheatley, Jr., BSEE"
1:
989:Comparison with power MOSFETs
2949:Silicon controlled rectifier
2811:Organic light-emitting diode
2701:Diffused junction transistor
2220:10.1016/0038-1101(85)90009-7
2125:IEEE Electron Device Letters
2081:IEEE Electron Device Letters
960:switched-mode power supplies
835:Who is the inventor of IGBT?
561:Current switching capability
139:uninterruptible power supply
133:(VFDs) for motor control in
129:in high-power applications:
2753:Static induction transistor
2690:Bipolar junction transistor
2642:MOS field-effect transistor
2614:Fin field-effect transistor
1475:Basic Electronics Tutorials
1453:10.1109/ACCESS.2020.3028904
1246:Current injection technique
1236:Bipolar junction transistor
1021:compared to a power MOSFET.
912:bipolar junction transistor
898:RF CMOS § Applications
632:Bell Telephone Laboratories
343:bipolar junction transistor
3618:
2960:Static induction thyristor
2493:Device physics information
2021:Baliga, B. Jayant (2015).
1770:U. S. Patent No. 4,364,073
1722:10.1109/ISSCC.1978.1155837
1686:. pp. 144, 284, 318.
1594:10.1142/9789814503464_0076
1334:10.17577/IJERTCONV4IS02018
1276:Power semiconductor device
1123:) with a rated current of
1050:computer programs such as
974:with blocking voltages of
887:
881:
756:10 W/cm and reached 5
457:Low gate voltage required
156:, thus it is also used in
100:power semiconductor device
27:Type of solid state switch
3129:(Hexode, Heptode, Octode)
2881:Hybrid integrated circuit
2724:Light-emitting transistor
2031:. pp. xxviii, 5–12.
1992:10.1109/MPEL.2015.2421751
1561:. Computer History Museum
1127:and a maximum voltage of
890:LDMOS § Applications
484:Operating frequency range
391:Emitter, collector, gate
131:variable-frequency drives
104:metal–oxide–semiconductor
77:
35:
3176:Backward-wave oscillator
2886:Light emitting capacitor
2742:Point-contact transistor
2712:Junction Gate FET (JFET)
2177:10.1109/IEDM.1983.190445
1957:10.1109/IEDM.1982.190269
1923:10.1109/IEDM.1985.190916
1815:10.1109/IEDM.1984.190866
1080:Darlington configuration
930:electronic devices, and
872:gate turn-off thyristors
699:gate turn-off thyristors
608:High voltage, robustness
600:Lower power dissipation
597:Higher power dissipation
210:Very high >1 kV
127:switching power supplies
3187:Crossed-field amplifier
2706:Field-effect transistor
2507:IGBT driver calculation
2428:10.1109/TR.2009.2020134
2332:B J Baliga and M Smith
2200:Solid-State Electronics
1885:10.1109/T-ED.1987.22929
1538:Computer History Museum
1336:(inactive 2024-08-28).
1119:IGBT module (IGBTs and
1094:IGBT failure mechanisms
642:under the direction of
589:Lower voltage handling
534:Relatively higher cost
446:One source of carriers
443:Two sources of carriers
3356:Voltage-regulator tube
2923:MOS integrated circuit
2788:Constant-current diode
2764:Unijunction transistor
2146:10.1109/EDL.1983.25799
2101:10.1109/EDL.1983.25649
670:
627:
334:
182:Device characteristic
177:IGBT comparison table
166:pulse repetition rates
150:pulse-width modulation
98:) is a three-terminal
3425:Electrolytic detector
3198:Inductive output tube
3014:Low-dropout regulator
2929:Organic semiconductor
2860:Printed circuit board
2696:Darlington transistor
2543:Electronic components
2497:University of Glasgow
2335:, EDN SEPTEMBER, 1983
1090:simulation software.
920:industrial technology
668:
625:
586:High voltage handling
545:Gate voltage control
520:Requires gate current
332:
84:IGBT schematic symbol
3577:Solid state switches
3243:Beam deflection tube
2912:Metal oxide varistor
2805:Light-emitting diode
2659:Thin-film transistor
2620:Floating-gate MOSFET
2502:Spice model for IGBT
1951:. pp. 264–267.
1917:. pp. 150–153.
1809:. pp. 860–861.
1716:. pp. 222–223.
1251:Floating-gate MOSFET
916:consumer electronics
800:triggered spark gaps
735:electron irradiation
517:Control requirements
424:On-state, off-state
388:Anode, cathode, gate
224:High >500 A
218:High <500 A
158:switching amplifiers
3602:Japanese inventions
3587:Bipolar transistors
3219:Traveling-wave tube
3019:Switching regulator
2855:Printed electronics
2832:Step recovery diode
2609:Depletion-load NMOS
2385:1994ITPE....9..532H
2212:1985SSEle..28..289B
2138:1983IEDL....4..452B
2093:1983IEDL....4...63R
1877:1987ITED...34..351N
1444:2020IEEEA...8r6172S
1121:freewheeling diodes
1064:equivalent circuits
948:bipolar transistors
868:safe operating area
776:secondary breakdown
750:safe operating area
695:safe operating area
656:Mitsubishi Electric
359:
221:Low <200 A
207:High <1 kV
204:High <1 kV
178:
141:systems (UPS), and
117:with a "MOS" gate (
32:
3524:Crystal oscillator
3384:Variable capacitor
3059:Switched capacitor
3001:Voltage regulators
2875:Integrated circuit
2759:Tetrode transistor
2737:Pentode transistor
2730:Organic LET (OLET)
2717:Organic FET (OFET)
2171:. pp. 79–82.
1617:Lojek, Bo (2007).
1580:KAHNG, D. (1961).
1228:Electronics portal
1048:circuit simulating
1001:freewheeling diode
717:(IEDM) that year.
671:
628:
583:Voltage capability
578:Low current drive
575:High current drive
418:Modes of operation
357:
335:
176:
119:MOS-gate thyristor
3597:Indian inventions
3582:Power electronics
3559:
3558:
3519:Ceramic resonator
3331:Mercury-arc valve
3283:Video camera tube
3235:Cathode-ray tubes
2995:
2994:
2603:Complementary MOS
2472:978-3-938843-83-3
2393:10.1109/63.321038
2244:Marvin W. Smith,
1663:10.1149/1.2428650
1628:978-3-540-34258-8
1603:978-981-02-0209-5
1520:10.1149/1.2428650
1438:: 186172–186180.
1266:Power electronics
968:induction heating
730:power electronics
705:Practical devices
615:
614:
413:NPN(P) structure
322:
321:
281:Output impedance
88:
87:
72:Electronic symbol
49:Working principle
16:(Redirected from
3609:
3572:Transistor types
3413:electrical power
3298:Gas-filled tubes
3182:Cavity magnetron
3009:Linear regulator
2558:
2536:
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2330:
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2304:
2300:
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2284:
2283:
2278:. Archived from
2272:
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2255:
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1411:
1410:
1404:techweb.rohm.com
1396:
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1189:
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1179:
1170:
1167:
1161:
1152:
1149:
1139:
1130:
1126:
1116:
1066:or macromodels.
1020:
980:
904:power transistor
865:
861:
759:
755:
719:General Electric
711:B. Jayant Baliga
692:
688:
658:in the Japanese
648:General Electric
644:William Shockley
542:Pulse triggering
429:Design structure
360:
325:Device structure
295:Switching speed
267:Input impedance
179:
154:low-pass filters
143:induction stoves
82:
53:
52:
40:
33:
21:
3617:
3616:
3612:
3611:
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3608:
3607:
3606:
3562:
3561:
3560:
3555:
3493:
3408:audio and video
3393:
3360:
3292:
3229:
3157:
3138:Photomultiplier
3063:
2991:
2939:Quantum circuit
2847:
2841:
2783:Avalanche diode
2769:
2681:
2674:
2563:
2552:
2545:
2540:
2489:
2477:
2475:
2473:
2462:
2451:
2448:
2446:Further reading
2443:
2413:
2412:
2408:
2370:
2369:
2365:
2355:
2353:
2352:. June 21, 2011
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2132:(12): 452–454.
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780:thermal runaway
757:
753:
707:
690:
686:
640:Walter Brattain
620:
572:Control current
550:Switching speed
528:Value for money
451:Turn-on voltage
355:
327:
261:
255:
250:
244:
239:
233:
215:Current rating
201:Voltage rating
162:control systems
83:
50:
48:
43:
28:
23:
22:
18:IGBT transistor
15:
12:
11:
5:
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3487:Wollaston wire
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3275:
3270:
3268:Selectron tube
3265:
3260:
3258:Magic eye tube
3255:
3250:
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3239:
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2827:Schottky diode
2824:
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2510:
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2499:
2488:
2487:External links
2485:
2484:
2483:
2471:
2447:
2444:
2442:
2441:
2422:(2): 271–276.
2406:
2379:(5): 532–542.
2363:
2337:
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2307:
2285:
2282:on 2011-11-14.
2267:
2250:
2234:
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2206:(3): 289–297.
2190:
2159:
2114:
2071:
2044:
2037:
2029:William Andrew
2013:
1970:
1936:
1898:
1871:(2): 351–355.
1848:
1828:
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1283:
1281:Solar inverter
1278:
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1111:
1107:
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1095:
1092:
1062:-based model,
1060:device physics
1039:
1036:
1032:
1031:
1022:
1012:switching loss
1008:
1004:
990:
987:
964:traction motor
939:
936:
932:transportation
882:Main article:
879:
876:
836:
833:
815:
812:
792:plasma physics
760:10 W/cm.
706:
703:
619:
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539:Control method
536:
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531:Cost-effective
529:
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521:
518:
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510:
507:
503:
502:
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492:
491:
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473:Plasma density
470:
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447:
444:
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440:Carrier source
437:
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410:PNPN structure
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3588:
3585:
3583:
3580:
3578:
3575:
3573:
3570:
3569:
3567:
3550:
3549:mercury relay
3547:
3545:
3542:
3541:
3540:
3537:
3535:
3532:
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3527:
3525:
3522:
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3402:
3400:
3396:
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3387:
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3378:
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3374:
3373:
3372:Potentiometer
3370:
3369:
3367:
3363:
3357:
3354:
3352:
3349:
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3309:
3307:
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3288:Williams tube
3286:
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3274:
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3266:
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3259:
3256:
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3134:
3131:
3128:
3125:
3123:
3120:
3118:
3115:
3113:
3110:
3108:
3107:Fleming valve
3105:
3103:
3100:
3098:
3095:
3093:
3090:
3088:
3085:
3083:
3080:
3078:
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2947:
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2937:
2935:
2934:Photodetector
2932:
2930:
2927:
2924:
2921:
2919:
2916:
2913:
2910:
2908:
2905:
2903:
2902:Memtransistor
2900:
2898:
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2893:
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2873:
2871:
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2559:
2556:
2554:
2551:Semiconductor
2548:
2544:
2537:
2532:
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2525:
2523:
2518:
2517:
2514:
2508:
2505:
2503:
2500:
2498:
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2474:
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2463:(PDF-Version)
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2038:9781455731534
2034:
2030:
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2017:
2014:
2009:
2005:
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1997:
1993:
1989:
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1981:
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1693:9781351262316
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1429:
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1395:
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1389:
1378:
1377:www.jedec.org
1374:
1368:
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1257:
1254:
1252:
1249:
1247:
1244:
1242:
1241:Bootstrapping
1239:
1237:
1234:
1233:
1229:
1223:
1218:
1213:
1197:
1192:
1178:
1173:
1160:
1155:
1145:
1138:
1133:
1122:
1115:
1110:
1105:
1103:
1099:
1093:
1091:
1089:
1085:
1081:
1077:
1073:
1069:
1065:
1061:
1057:
1053:
1049:
1046:with various
1045:
1037:
1035:
1028:
1023:
1018:
1013:
1009:
1005:
1002:
997:
996:
995:
988:
986:
984:
979:
973:
969:
965:
961:
957:
953:
949:
945:
944:power MOSFETs
937:
935:
933:
929:
925:
924:energy sector
921:
917:
913:
909:
905:
899:
895:
891:
885:
877:
875:
873:
869:
856:
852:
848:
844:
840:
834:
832:
829:
824:
820:
814:Patent issues
813:
811:
809:
805:
801:
797:
793:
789:
785:
784:power MOSFETs
781:
777:
773:
768:
766:
761:
751:
746:
744:
738:
736:
731:
726:
724:
720:
716:
712:
704:
702:
700:
696:
683:
679:
675:
667:
663:
661:
657:
653:
649:
645:
641:
637:
633:
624:
617:
610:
607:
604:
603:
599:
596:
593:
592:
588:
585:
582:
581:
577:
574:
571:
570:
566:
563:
560:
559:
555:
552:
549:
548:
544:
541:
538:
537:
533:
530:
527:
526:
522:
519:
516:
515:
511:
508:
505:
504:
500:
497:
494:
493:
489:
486:
483:
482:
478:
475:
472:
471:
467:
464:
462:Turn off loss
461:
460:
456:
453:
450:
449:
445:
442:
439:
438:
434:
431:
428:
427:
423:
420:
417:
416:
412:
409:
406:
405:
402:Three layers
401:
398:
395:
394:
390:
387:
384:
383:
379:
376:
373:
372:
368:
365:
362:
361:
352:
350:
348:
344:
340:
331:
324:
317:
314:
311:
308:
307:
303:
300:
297:
294:
293:
289:
286:
283:
280:
279:
275:
272:
269:
266:
265:
258:
253:
247:
242:
236:
232:Current ratio
231:
228:
227:
223:
220:
217:
214:
213:
209:
206:
203:
200:
199:
195:
193:
190:
188:
184:
181:
180:
174:
172:
167:
163:
159:
155:
151:
146:
144:
140:
136:
135:electric cars
132:
128:
124:
120:
116:
111:
109:
105:
101:
97:
93:
81:
76:
73:
69:
65:
61:
58:
57:Semiconductor
55:
46:
39:
34:
19:
3306:Cold cathode
3273:Storage tube
3163:Vacuum tubes
3112:Neutron tube
3087:Beam tetrode
3069:Vacuum tubes
2654:Power MOSFET
2625:
2476:. Retrieved
2458:
2419:
2415:
2409:
2376:
2372:
2366:
2354:. Retrieved
2349:
2340:
2328:
2319:
2310:
2280:the original
2270:
2253:
2228:
2203:
2199:
2193:
2168:
2162:
2129:
2123:
2117:
2087:(3): 63–65.
2084:
2080:
2074:
2062:. Retrieved
2056:
2047:
2023:
2016:
1986:(2): 12–16.
1983:
1979:
1973:
1948:
1914:
1868:
1864:
1806:
1786:
1777:
1713:
1678:
1671:
1654:
1650:
1618:
1612:
1585:
1575:
1563:. Retrieved
1553:
1541:. Retrieved
1528:
1511:
1507:
1482:
1470:
1435:
1431:
1407:. Retrieved
1403:
1380:. Retrieved
1376:
1350:cite journal
1325:
1321:
1271:Power MOSFET
1146:) rated for
1106:IGBT modules
1100:
1097:
1041:
1033:
1030:application.
992:
966:control and
941:
908:RF amplifier
901:
894:Power MOSFET
878:Applications
857:
853:
849:
845:
841:
838:
825:
821:
817:
769:
762:
747:
739:
727:
708:
684:
680:
676:
672:
636:John Bardeen
629:
339:power MOSFET
336:
256:
245:
234:
229:Input drive
192:Power MOSFET
171:power MOSFET
147:
112:
95:
91:
89:
3472:Transformer
3214:Sutton tube
3054:Charge pump
2907:Memory cell
2837:Zener diode
2799:Laser diode
2682:transistors
2564:transistors
2350:IC Insights
1588:: 583–596.
1432:IEEE Access
1015: [
804:Tesla coils
605:Application
506:Power range
399:Four layers
110:structure.
3566:Categories
3544:reed relay
3534:Parametron
3467:Thermistor
3445:resettable
3404:Connector
3365:Adjustable
3341:Nixie tube
3311:Crossatron
3278:Trochotron
3253:Iconoscope
3248:Charactron
3225:X-ray tube
3097:Compactron
3077:Acorn tube
3034:Buck–boost
2955:Solaristor
2817:Photodiode
2794:Gunn diode
2790:(CLD, CRD)
2572:Transistor
2478:2019-02-17
2356:15 October
2297:US4364073A
1749:USRE33209E
1657:(9): 547.
1565:August 10,
1543:August 10,
1514:(9): 547.
1409:2024-08-20
1382:2024-08-20
1287:References
956:transistor
938:Advantages
910:(11%) and
888:See also:
796:thyratrons
650:(GE). The
594:Power loss
374:Definition
301:Fast (ns)
298:Slow (ÎĽs)
123:transistor
3507:Capacitor
3351:Trigatron
3346:Thyratron
3336:Neon lamp
3263:Monoscope
3143:Phototube
3127:Pentagrid
3092:Barretter
2977:Trancitor
2972:Thyristor
2897:Memristor
2822:PIN diode
2599:(ChemFET)
2495:from the
2436:206772637
2064:17 August
2000:2329-9207
1684:CRC Press
1462:2169-3536
1342:2278-0181
983:kilowatts
928:aerospace
567:Moderate
385:Terminals
366:Thyristor
251:~ 3–10 V
240:~ 20–200
115:thyristor
3529:Inductor
3499:Reactive
3477:Varistor
3457:Resistor
3435:Antifuse
3321:Ignitron
3316:Dekatron
3204:Klystron
3193:Gyrotron
3122:Nuvistor
3039:Split-pi
2925:(MOS IC)
2892:Memistor
2650:(MuGFET)
2644:(MOSFET)
2616:(FinFET)
2454:Semikron
2401:53487037
2154:40454892
2109:37850113
2008:37855728
1965:40672805
1931:24346402
1893:25472355
1823:12136665
1730:11665546
1214:See also
1186:, up to
1144:H-bridge
1038:Modeling
808:coilguns
788:particle
407:Junction
262:~ 4–8 V
63:Invented
3592:MOSFETs
3430:Ferrite
3398:Passive
3389:Varicap
3377:digital
3326:Krytron
3148:Tetrode
3133:Pentode
2987:Varicap
2968:(3D IC)
2944:RF CMOS
2848:devices
2622:(FGMOS)
2553:devices
2456:(ed.).
2381:Bibcode
2208:Bibcode
2185:2210870
2134:Bibcode
2089:Bibcode
1873:Bibcode
1440:Bibcode
1044:modeled
972:amperes
828:Toshiba
772:latchup
765:ion gel
743:Toshiba
618:History
556:Faster
315:Medium
304:Medium
287:Medium
254:Voltage
243:Voltage
51:
3462:Switch
3153:Triode
3117:Nonode
3082:Audion
2962:(SITh)
2846:Other
2813:(OLED)
2775:Diodes
2726:(LET)
2708:(FET)
2680:Other
2628:(IGBT)
2605:(CMOS)
2592:BioFET
2587:BiCMOS
2469:
2434:
2399:
2303:
2183:
2152:
2107:
2035:
2006:
1998:
1963:
1929:
1891:
1821:
1755:
1728:
1690:
1625:
1600:
1460:
1340:
1261:MOSFET
1206:1200 V
1169:1200 V
1129:3300 V
1125:1200 A
922:, the
896:, and
733:using
660:patent
553:Slower
479:Lower
476:Higher
468:Lower
465:Higher
396:Layers
363:Aspect
347:MOSFET
185:Power
106:(MOS)
3539:Relay
3512:types
3450:eFUSE
3221:(TWT)
3209:Maser
3200:(IOT)
3189:(CFA)
3178:(BWO)
3102:Diode
3049:SEPIC
3029:Boost
2982:TRIAC
2951:(SCR)
2914:(MOV)
2888:(LEC)
2807:(LED)
2766:(UJT)
2755:(SIT)
2749:(PUT)
2692:(BJT)
2661:(TFT)
2637:LDMOS
2632:ISFET
2432:S2CID
2397:S2CID
2181:S2CID
2150:S2CID
2105:S2CID
2004:S2CID
1961:S2CID
1927:S2CID
1889:S2CID
1819:S2CID
1726:S2CID
1328:(2).
1203:600 A
1188:900 V
1166:450 A
1151:600 V
1148:400 A
1088:Saber
1078:in a
1068:SPICE
1056:Saber
1052:SPICE
1019:]
1007:used.
976:6500
369:IGBT
318:High
309:Cost
276:High
273:High
196:IGBT
3482:Wire
3440:Fuse
3024:Buck
2877:(IC)
2865:DIAC
2801:(LD)
2670:UMOS
2665:VMOS
2582:PMOS
2577:NMOS
2562:MOS
2467:ISBN
2358:2019
2066:2019
2033:ISBN
1996:ISSN
1688:ISBN
1623:ISBN
1598:ISBN
1567:2016
1545:2016
1458:ISSN
1356:link
1338:ISSN
1184:30 A
1076:BJTs
1074:and
1072:FETs
806:and
798:and
790:and
638:and
564:High
312:Low
290:Low
284:Low
270:Low
152:and
108:gate
96:IGBT
66:1959
3044:Ćuk
2424:doi
2389:doi
2216:doi
2173:doi
2142:doi
2097:doi
1988:doi
1953:doi
1919:doi
1881:doi
1811:doi
1718:doi
1659:doi
1655:104
1590:doi
1516:doi
1512:104
1448:doi
1330:doi
1027:log
952:FET
634:by
454:N/A
187:BJT
90:An
3568::
3418:RF
3167:RF
2430:.
2420:58
2418:.
2395:.
2387:.
2375:.
2348:.
2318:.
2288:^
2237:^
2214:.
2204:28
2202:.
2179:.
2148:.
2140:.
2128:.
2103:.
2095:.
2083:.
2055:.
2027:.
2002:.
1994:.
1982:.
1959:.
1939:^
1925:.
1901:^
1887:.
1879:.
1869:34
1867:.
1851:^
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