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John Robertson (physicist)

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for 18 years, and in 1994 returned to Cambridge. He has published over 600 journal papers with around 33,000 citations. His main topic of research is theory of carbon materials. Other research interests include: carbon nanotubes, graphene,
1141: 261:, their thin film transistors, instability mechanisms (calculations); density functional calculations of semiconductors, oxides, carbon materials, and hybrid density functional calculations for correct 431: 769: 304: 276: 194: 1151: 292: 128: 1126: 209:
Robertson received his Bachelor of Arts and Doctor of Philosophy degrees from the University of Cambridge. His PhD was awarded in 1975 for research on
229: 123: 678: 1146: 1121: 329: 307:, his certificate of election reads: "In recognition of his sustained contribution to the production and development of electronic devices". 237:, electronic applications (experimental and calculation); modelling of CVD mechanisms; carbon interconnects, carbon conductors, carbon for 752: 435: 712: 998: 410: 1156: 432:"Congratulations to Professors John Robertson and Zoubin Ghahramani on their elections as Fellows of the Royal Society" 1116: 761: 186: 71: 296: 699: 288: 258: 234: 943: 933: 560:
Robertson, J. (2000). "Band offsets of wide-band-gap oxides and implications for future electronic devices".
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Ferrari, A.; Robertson, J. (2000). "Interpretation of Raman spectra of disordered and amorphous carbon".
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Robertson, J.; O'Reilly, E. (1987). "Electronic and atomic structure of amorphous carbon".
1080: 1065: 1003: 958: 893: 868: 848: 843: 214: 97: 257:(modelling); transparent conducting oxides, amorphous oxide semiconductors (AOS) such as 720: 648: 613: 573: 490: 1085: 978: 953: 928: 898: 813: 562:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
238: 538: 201:. He is a leading specialist in the theory of amorphous carbon and related materials. 1110: 1060: 1008: 938: 878: 793: 765: 716: 546: 217: 1070: 1050: 1029: 988: 983: 973: 918: 913: 838: 818: 783: 210: 414: 371: 1034: 948: 858: 833: 190: 92: 1075: 621: 498: 49: 656: 463: 788: 254: 664: 262: 164: 581: 391: 246: 138: 1142:
Members of the University of Cambridge Department of Engineering
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Engineering and Physical Sciences Research Council (EPSRC)
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Institute of Electrical and Electronics Engineers (IEEE)
434:. University of Cambridge. 13 May 2015. Archived from 411:"People in the Electronic Devices and Materials group" 249:; high-Îş oxides on high mobility substrates such as 1043: 1022: 776: 159: 137: 111: 85: 67: 56: 42: 23: 352: 455:Electronic States in Amorphous Semi-Conductors 367: ed.). Oxford: A & C Black. 145:Electronic States in Amorphous Semi-Conductors 746: 700:Diamond and Related Materials Editorial Board 517:Materials Science and Engineering: R: Reports 8: 332:. London: The Royal Society. Archived from 228:Following his PhD, Robertson worked at the 753: 739: 731: 129:University of Illinois at Urbana–Champaign 31: 20: 528: 515:(2002). "Diamond-like amorphous carbon". 413:. University of Cambridge. Archived from 347: 345: 343: 305:Fellow of the Royal Society (FRS) in 2015 230:Central Electricity Research Laboratories 124:Central Electricity Research Laboratories 1152:Fellows of the American Physical Society 447: 445: 405: 403: 383: 381: 299:, and an Emeritus Editor of the journal 458:(PhD thesis). University of Cambridge. 324: 322: 320: 316: 1127:Alumni of the University of Cambridge 426: 424: 247:metal oxide semiconductor transistors 7: 275:His research has been funded by the 14: 713:"Professor John Robertson FRS" 330:"Professor John Robertson FRS" 189:(born 1950) is a Professor of 1: 539:10.1016/S0927-796X(02)00005-0 388:John Robertson's publications 301:Diamond and Related Materials 287:Robertson is a Fellow of the 1147:British electrical engineers 1122:Fellows of the Royal Society 598:(1986). "Amorphous carbon". 372:UK public library membership 46:1950 (age 73–74) 1173: 297:Materials Research Society 235:chemical vapour deposition 622:10.1080/00018738600101911 499:10.1103/PhysRevB.61.14095 363:. Vol. 2016 (online 289:American Physical Society 259:indium gallium zinc oxide 195:Department of Engineering 155: 78: 30: 657:10.1103/PhysRevB.35.2946 452:Robertson, John (1975). 394:bibliographic database. 702:. journals.elsevier.com 396:(subscription required) 365:Oxford University Press 354:"ROBERTSON, Prof. John" 199:University of Cambridge 119:University of Cambridge 61:University of Cambridge 37:John Robertson in 2015 265:; functional oxides, 723:on 17 November 2015. 683:Research Councils UK 1157:Fellows of the IEEE 649:1987PhRvB..35.2946R 614:1986AdPhy..35..317R 601:Advances in Physics 574:2000JVSTB..18.1785R 491:2000PhRvB..6114095F 303:. He was elected a 224:Research and career 1117:English physicists 417:on 9 October 2014. 283:Awards and honours 245:for complementary 243:high-Îş dielectrics 1104: 1103: 994:Natalie Strynadka 884:Zoubin Ghahramani 637:Physical Review B 479:Physical Review B 370:(Subscription or 211:electronic states 181: 180: 80:Scientific career 16:British scientist 1164: 874:Alison Etheridge 864:A. W. F. Edwards 755: 748: 741: 732: 725: 724: 719:. Archived from 709: 703: 697: 691: 690: 685:. 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London: 374:required.) 311:References 50:Manchester 989:Ajay Sood 839:Ben Davis 789:Ali Alavi 547:135487365 525:CiteSeerX 464:500550417 360:Who's Who 263:band gaps 215:amorphous 205:Education 193:, in the 173:/profiles 63:(BA, PhD) 1023:Honorary 768:elected 295:and the 1044:Foreign 777:Fellows 770:in 2015 764:of the 762:Fellows 665:9941778 645:Bibcode 610:Bibcode 570:Bibcode 487:Bibcode 197:at the 160:Website 663:  545:  527:  462:  392:Scopus 291:, the 251:InGaAs 175:/jr214 150:(1975) 148:  139:Thesis 86:Fields 74:(2015) 68:Awards 543:S2CID 661:PMID 460:OCLC 167:.cam 43:Born 653:doi 618:doi 578:doi 535:doi 495:doi 267:TiO 213:in 187:FRS 171:.uk 169:.ac 165:eng 72:FRS 1113:: 681:. 659:. 651:. 641:35 639:. 616:. 606:35 604:. 576:. 566:18 564:. 541:. 533:. 521:37 519:. 493:. 483:61 481:. 444:^ 423:^ 402:^ 380:^ 357:. 342:^ 319:^ 279:. 272:. 255:Ge 253:, 241:; 220:. 754:e 747:t 740:v 667:. 655:: 647:: 624:. 620:: 612:: 584:. 580:: 572:: 549:. 537:: 501:. 497:: 489:: 466:. 269:2

Index


Manchester
University of Cambridge
FRS
Electronics
Carbon nanotubes
Amorphous carbon
University of Cambridge
Central Electricity Research Laboratories
University of Illinois at Urbana–Champaign
Thesis
Electronic States in Amorphous Semi-Conductors
eng.cam.ac.uk/profiles/jr214
FRS
Electronics
Department of Engineering
University of Cambridge
electronic states
amorphous
semiconductors
Central Electricity Research Laboratories
chemical vapour deposition
supercapacitors
high-Îş dielectrics
metal oxide semiconductor transistors
InGaAs
Ge
indium gallium zinc oxide
band gaps
TiO2

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