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Karl Hess (scientist)

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potential to increase the speed or the lifetime of the circuit. Hess and Isik Kizilyalli compared the degradation of CMOS transistor wafers prepared with either deuterium or hydrogen, and found that use of deuterium substantially increased transistor lifetimes. In 1996, Hess was named to the Swanlund Chair of Electrical and Computer and Computer Engineering at the University of Illinois.
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Hess became "a leading theoretician in the realm of semiconductor transistors". His models of the behavior of transistors and integrated circuits enabled researchers to understand how they worked at fundamental levels and find ways to improve them. His work on simulation of the behavior of electrons
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is flawed. They argue that Bell's test can be made to fail by modeling temporal information. With this addition, existing experimental findings can be explained without resorting to hidden variables or "action at a distance". Others have argued that Hess and Philipp's formulation does not depend on
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From the 1990s onwards, Hess focused on nanotechnology and quantum informatics, including quantum transport in mesoscopic systems. Around 1995, a conversation with nanolithographer Joseph W. Lyding suggested to Hess that using deuterium to passivate the surfaces of integrated circuits had the
279:, tiny lasers used in bar-code scanners, CD players, and fiber-optic technology. Hess's algorithms were used for design software called MINILASE, enabling engineers to more quickly and accurately predict the effects of design modifications. 270:
of simulation. This approach incorporated both the Boltzmann equation and aspects of quantum mechanics, using supercomputers to model electrons both as particles and as waves. He also developed simulations for the behavior of electrons in
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Hess, K.; Register, L. F.; Tuttle, B.; Lyding, J.; Kizilyalli, I. C. (October 1998). "Impact of nanostructure research on conventional solid-state electronics: The giant isotope effect in hydrogen desorption and CMOS lifetime".
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In 1974 Hess returned to the University of Vienna as assistant professor. In 1977 he was offered a position as a visiting associate professor which enabled him to return to UIUC. Hess worked on improving the efficiency of
1632: 937:"The Beckman Institute for Advanced Science and Technology 'Two heads are better than one' is an adage honored by this research institute, where multidisciplinary collaboration is an art" 209:, where he received his Ph.D. in 1970 in applied physics and mathematics. He worked with Karlheinz Seeger on electron transport in semiconductors and subsequently became an assistant. 322:
Hess officially retired from the University of Illinois at Urbana-Champaign in May 2004, but remains the Swanlund Professor Emeritus. After his retirement, Hess was nominated to the
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Hess chaired one of two committees established in 1983 to consider the possible formation of a multidisciplinary research facility at the University of Illinois. In the fall of 1987,
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Scheidl, T.; Ursin, R.; Kofler, J.; Ramelow, S.; Ma, X.-S.; Herbst, T.; Ratschbacher, L.; Fedrizzi, A.; Langford, N. K.; Jennewein, T.; Zeilinger, A. (1 November 2010).
384: 132: 104: 310:(EPR) paradox should differ depending on whether or not hidden variables did or did not exist. Hess and mathematician Walter Philipp controversially claim that 821:
Compound semiconductors 2001 : proceedings of the Twenty-eighth International Symposium on Compound Semiconductors held in Tokyo, Japan, 1–4 October 2001
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In 1980 Hess was appointed to a full professorship for electrical engineering and computer science at UIUC. He also undertook secret research at the
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Hess, K.; Morkoç, H.; Shichijo, H.; Streetman, B. G. (15 September 1979). "Negative differential resistance through real‐space electron transfer".
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predicted that the question of hidden variables could be experimentally tested: the outcome of specific experiments based on the hypothetical
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developed the concept of "real space transfer" to describe the performance of high-frequency transistors involving hot‐electron
224:(the co-inventor of CMOS technology), Hess worked theoretically on electron transport in transistors, to find a solution of the 364: 182: 387:(IEEE) "For contributions to high field transport and real space transfer effects in semiconductor heterolayer structures." 407:, IEEE, for "Contributions to Electronic Transport in Semiconductors and in Quantum Well Heterostructures at High Energies" 262:
at UIUC. Hess later served as Co-chair of the Molecular and Electronic Nanostructures initiative at the Beckman Institute.
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Seeger, Karlheinz; Hess, Karl F. (15 March 2005). "Momentum and energy relaxation of warm carriers in semiconductors".
1496: 936: 327: 1110: 391: 394:, "For contributions to nonlinear electronic transport in semiconductors and in quantum well heterostructures." 75: 1594: 1442: 1532: 1627: 351: 323: 287: 233: 190: 316: 213: 155: 1083:"Multi-Scale Approach to Semiconductor Device Simulation Combining Semi-classical and Quantum Regions" 367:, "For contributions to hot electron transport and the numerical simulation of semiconductor devices." 1622: 1370: 1311: 1242: 1149: 1035: 996: 904: 861: 595: 299: 255: 202: 131:) is the Swanlund Professor Emeritus in the Department of Electrical and Computer Engineering at the 65: 241: 175: 143: 79: 17: 1467: 1301: 1196: 1051: 877: 290:, a theoretical idea in quantum mechanics that has been hotly contested by many scientists since 276: 225: 151: 1398: 1339: 1270: 1177: 966: 825: 717: 623: 537: 518: 499: 480: 461: 442: 423: 311: 303: 147: 83: 1388: 1378: 1329: 1319: 1260: 1250: 1204: 1167: 1157: 1043: 1004: 912: 869: 819: 711: 613: 603: 237: 404: 291: 272: 206: 1374: 1315: 1246: 1197:"Exorcising Einstein's spooks Is there another layer of reality beyond quantum physics?" 1153: 1039: 1000: 908: 865: 599: 1558: 1393: 1358: 1138:"Bell's theorem and the problem of decidability between the views of Einstein and Bohr" 331: 163: 159: 1334: 1289: 1008: 618: 583: 1616: 1265: 1230: 1172: 1137: 881: 380: 221: 1055: 641: 1023: 680: 217: 244:. This work was important to the development of layered semiconductor technology. 1024:"Deuterium post-metal annealing of MOSFET's for improved hot carrier reliability" 1507: 1443:"National Academy of Engineering Elects 74 Members and Eight Foreign Associates" 756: 307: 212:
In 1973 Hess went to the University of Illinois at Urbana-Champaign (UIUC) on a
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Computational electronics : semiconductor transport and device simulation
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Hess has been elected to many scientific associations, including both the
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Bridging divides : the origins of the Beckman Institute at Illinois
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1996, Swanlund Chair of Electrical and Computer and Computer Engineering
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Gill, R. D.; Weihs, G.; Zeilinger, A.; Zukowski, M. (31 October 2002).
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Computational Electronics Semiconductor Transport and Device Simulation
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new time parameters, but rather on a violation of the assumption of
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Fellows of the American Association for the Advancement of Science
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Hess, Karl; Leburton, Jean-Pierre; Ravaioli, Umberto (1996).
178:, Hess is considered a founder of computational electronics. 16:
This article is about the scientist. For the painter, see
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Members of the United States National Academy of Sciences
1559:"Multi-scale Approach to Semiconductor Device Simulation" 1447:
The National Academies of Sciences, Engineering, Medicine
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Kizilyalli, I. C.; Lyding, J. W.; Hess, K. (March 1997).
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Monte Carlo device simulation : full band and beyond
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Working knowledge STEM essentials for the 21st century
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Physica E: Low-dimensional Systems and Nanostructures
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Beckman Institute for Advanced Science and Technology
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Beckman Institute for Advanced Science and Technology
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Beckman Institute for Advanced Science and Technology
1359:"Violation of local realism with freedom of choice" 399:
American Association for the Advancement of Science
100: 71: 61: 36: 29: 1504:Institute of Electrical and Electronics Engineers 642:"Karl Hess Karl Hess Swanlund Professor Emeritus" 385:Institute of Electrical and Electronics Engineers 961:Hess, K.; Leburton, J. P.; Ravaioli, U. (1991). 258:and Karl Hess became associate directors of the 1363:Proceedings of the National Academy of Sciences 1294:Proceedings of the National Academy of Sciences 1235:Proceedings of the National Academy of Sciences 1142:Proceedings of the National Academy of Sciences 588:Proceedings of the National Academy of Sciences 418:Hess, K.; Leburton, J.P.; Ravaioli, U. (1991). 8: 1231:"A possible loophole in the theorem of Bell" 681:"Hess leaves a huge legacy at Beckman, UIUC" 201:Hess studied mathematics and physics at the 1076: 1074: 1072: 757:"Hess nominated for National Science Board" 750: 748: 746: 744: 742: 740: 460:. Port Townsend, WA: Loompanics Unlimited. 1229:Hess, K.; Philipp, W. (27 November 2001). 1136:Hess, K.; Philipp, W. (27 November 2001). 577: 575: 573: 571: 569: 567: 565: 563: 561: 133:University of Illinois at Urbana–Champaign 105:University of Illinois at Urbana–Champaign 26: 1392: 1382: 1333: 1323: 1305: 1264: 1254: 1171: 1161: 813: 811: 809: 807: 805: 617: 607: 345:German Academy of Science and Engineering 1643:Fellows of the American Physical Society 824:. Bristol, U.K.: IoP Publ. p. vii. 674: 672: 670: 668: 666: 664: 662: 496:Advanced theory of semiconductor devices 1475:American Academy of Arts & Sciences 930: 928: 926: 705: 703: 701: 582:Brownlee, Christen (17 February 2004). 557: 249:United States Naval Research Laboratory 1111:"What is spooky action at a distance?" 422:. Boston: Kluwer Academic Publishers. 1497:"IEEE DAVID SARNOFF AWARD RECIPIENTS" 1441:Brandt, Deborah (February 16, 2001). 779: 777: 372:American Academy of Arts and Sciences 7: 755:McGaughey, Steve (January 1, 2005). 150:. He is recognized as an expert in 679:McGaughey, Steve (April 26, 2006). 286:Hess has written extensively about 135:(UIUC). He helped to establish the 716:. Urbana: University of Illinois. 14: 1195:Ball, Philip (29 November 2001). 1587:"Past J.J. Ebers Award Winners" 365:National Academy of Engineering 183:National Academy of Engineering 20:. For the American author, see 1648:University of Illinois faculty 785:"Professor Emeritus Karl Hess" 477:Hot Carriers in Semiconductors 189:(2003). He has served on the 1: 1591:IEEE Electron Devices Society 1009:10.1016/S1386-9477(98)00211-2 935:Bell, Trudy E. (1 Nov 1999). 536:. : Pan Stanford Publishing. 334:, serving from 2006 to 2008. 266:in semiconductors led to the 1028:IEEE Electron Device Letters 498:. New York, NY: IEEE Press. 359:National Academy of Sciences 268:full-band Monte Carlo method 226:Boltzmann transport equation 187:National Academy of Sciences 1653:University of Vienna alumni 1421:National Science Foundation 965:. Boston, MA: Springer US. 710:Brown, Theodore L. (2009). 479:. Boston, MA: Springer US. 441:. Boston, MA: Springer US. 328:National Science Foundation 300:spooky action at a distance 170:the nature and movement of 1669: 818:Arakawa, Yasuhiko (2002). 15: 789:Center for Advanced Study 392:American Physical Society 277:quantum well laser diodes 114: 93: 76:Computational electronics 854:Zeitschrift fĂźr Physik A 584:"Biography of Karl Hess" 251:from the 1980s onwards. 146:and the fundamentals of 1384:10.1073/pnas.1002780107 897:Applied Physics Letters 609:10.1073/pnas.0400379101 308:Einstein–Podolsky–Rosen 142:Hess is concerned with 1417:"Former Board Members" 1325:10.1073/pnas.182536499 1256:10.1073/pnas.251524998 1163:10.1073/pnas.251525098 517:. New York: Springer. 352:National Science Board 343:2010, Foreign member, 324:National Science Board 234:charge-coupled devices 191:National Science Board 123:(born 20 June 1945 in 1209:10.1038/news011129-15 214:Fulbright scholarship 156:semiconductor physics 1533:"APS Fellow Archive" 458:Community technology 330:(NSF) by President 256:William T. Greenough 203:University of Vienna 66:University of Vienna 1557:Hess, Karl (1995). 1375:2010PNAS..10719708S 1369:(46): 19708–19713. 1316:2002PNAS...9914632G 1300:(23): 14632–14635. 1247:2001PNAS...9814224H 1241:(25): 14224–14227. 1154:2001PNAS...9814228H 1148:(25): 14228–14233. 1081:Hess, Karl (1998). 1040:1997IEDL...18...81K 1001:1998PhyE....3....1H 909:1979ApPhL..35..469H 866:1970ZPhy..237..252S 600:2004PNAS..101.1797B 534:Einstein was right! 532:Hess, Karl (2014). 513:Hess, Karl (2013). 494:Hess, Karl (2000). 456:Hess, Karl (1995). 437:Hess, Karl (1991). 302:"? In the 1960s, 242:thermionic emission 144:solid-state physics 80:solid-state physics 18:Karl Hess (painter) 874:10.1007/BF01398639 319:required by Bell. 152:electron transport 1048:10.1109/55.556087 972:978-1-4757-2124-9 761:ECE Illinois News 685:Beckman Institute 524:978-1-4614-3275-3 486:978-1-4613-0401-2 405:J. J. Ebers Award 304:John Stewart Bell 228:for transistors. 148:quantum mechanics 118: 117: 95:Scientific career 84:quantum mechanics 1660: 1607: 1606: 1604: 1602: 1597:on 16 March 2012 1593:. Archived from 1583: 1577: 1576: 1574: 1572: 1563: 1554: 1548: 1547: 1545: 1543: 1529: 1523: 1522: 1520: 1518: 1513:on June 19, 2010 1512: 1506:. Archived from 1501: 1493: 1487: 1486: 1484: 1482: 1472: 1464: 1458: 1457: 1455: 1453: 1438: 1432: 1431: 1429: 1427: 1413: 1407: 1406: 1396: 1386: 1354: 1348: 1347: 1337: 1327: 1309: 1307:quant-ph/0208187 1285: 1279: 1278: 1268: 1258: 1226: 1220: 1219: 1217: 1215: 1192: 1186: 1185: 1175: 1165: 1133: 1127: 1126: 1124: 1122: 1117:. 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Index

Karl Hess (painter)
Karl Hess
Trumau
Austria
University of Vienna
Computational electronics
solid-state physics
quantum mechanics
simulation
University of Illinois at Urbana–Champaign
Beckman Institute for Advanced Science and Technology
Trumau
Austria
University of Illinois at Urbana–Champaign
Beckman Institute for Advanced Science and Technology
solid-state physics
quantum mechanics
electron transport
semiconductor physics
supercomputing
nanostructures
simulating
electrons
computer models
National Academy of Engineering
National Academy of Sciences
National Science Board
University of Vienna
Vienna, Austria
Fulbright scholarship

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