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Physics of failure

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Each of the equations above uses a combination of knowledge of the degradation mechanisms and test experience to develop first-order equations that allow the design or reliability engineer to be able to predict time to failure behavior based on information on the design architecture, materials, and
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The resources and successes with integrated circuits, and a review of some of the drivers of field failures, subsequently motivated the reliability physics community to initiate physics of failure investigations into package-level degradation mechanisms. An extensive amount of work was performed to
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An approach to the design and development of reliable product to prevent failure, based on the knowledge of root cause failure mechanisms. The Physics of Failure (PoF) concept is based on the understanding of the relationships between requirements and the physical characteristics of the product and
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There are some limitations with the use of physics of failure in design assessments and reliability prediction. The first is physics of failure algorithms typically assume a 'perfect design'. Attempting to understand the influence of defects can be challenging and often leads to Physics of Failure
1483:(PoF) predictions limited to end of life behavior (as opposed to infant mortality or useful operating life). In addition, some companies have so many use environments (think personal computers) that performing a PoF assessment for each potential combination of temperature / vibration / humidity / 67:
The concept of Physics of Failure, also known as Reliability Physics, involves the use of degradation algorithms that describe how physical, chemical, mechanical, thermal, or electrical mechanisms evolve over time and eventually induce failure. While the concept of Physics of Failure is common in
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funded an extensive amount of effort to especially improve the reliability of electronics, with the initial efforts focused on after-the-fact or statistical methodology. Unfortunately, the rapid evolution of electronics, with new designs, new materials, and new manufacturing processes, tended to
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A science-based approach to reliability that uses modeling and simulation to design-in reliability. It helps to understand system performance and reduce decision risk during design and after the equipment is fielded. This approach models the root causes of failure such as
830: 97:(RADC). Under the auspices of the RADC, the first Physics of Failure in Electronics Symposium was held in September 1962. The goal of the program was to relate the fundamental physical and chemical behavior of materials to reliability parameters. 93:
quickly negate approaches and predictions derived from older technology. In addition, the statistical approach tended to lead to expensive and time-consuming testing. The need for different approaches led to the birth of Physics of Failure at the
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develop algorithms that could accurately predict the reliability of interconnects. Specific interconnects of interest resided at 1st level (wire bonds, solder bumps, die attach), 2nd level (solder joints), and 3rd level (plated through holes).
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their variation in the manufacturing processes, and the reaction of product elements and materials to loads (stressors) and interaction under loads and their influence on the fitness for use with respect to the use conditions and time.
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Physics of failure is typically designed to predict wearout, or an increasing failure rate, but this initial success by Black focused on predicting behavior during operational life, or a constant failure rate. This is because
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Just as integrated circuit community had four major successes with physics of failure at the die-level, the component packaging community had four major successes arise from their work in the 1970s and 1980s. These were
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Raghavan, N.; Prasad, K.; "Statistical outlook into the physics of failure for copper low-k intra-metal dielectric breakdown", Reliability Physics Symposium, 2009 IEEE International, vol., no., pp. 819–824, 26–30 April
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Bukowski, J.V.; Johnson, D.A.; Goble, W.M.; "Software-reliability feedback: a physics-of-failure approach", Reliability and Maintainability Symposium, 1992. Proceedings., Annual, vol., no., pp. 285–289, 21–23 Jan
1537:, Gas Turbine Materials/Components Life Evaluation & Extension Programs, Dr. Prakash Patnaik, Director SMPL, National Research Council Canada, Institute for Aerospace Research, Ottawa, Canada, 21 October 2008 1747:, McLeish, J.G.; "Enhancing MIL-HDBK-217 reliability predictions with physics of failure methods", Reliability and Maintainability Symposium (RAMS), 2010 Proceedings – Annual, vol., no., pp. 1–6, 25–28 Jan. 2010 203: 1241:{\displaystyle \sigma ={\frac {(\alpha _{\text{E}}-\alpha _{\text{Cu}})\Delta TA_{\text{E}}E_{\text{E}}E_{\text{Cu}}}{A_{\text{E}}E_{\text{E}}+A_{\text{Cu}}E_{\text{Cu}}}},\quad {\text{for }}\sigma \leq S_{Y}} 1664:
Engelmaier, W.; "Fatigue Life of Leadless Chip Carrier Solder Joints During Power Cycling", Components, Hybrids, and Manufacturing Technology, IEEE Transactions on, vol. 6, no. 3, pp. 232–237, Sep 1983
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Chen, Y.F. Lin, M.H. Chou, C.H. Chang, W.C. Huang, S.C. Chang, Y.J. Fu, K.Y. "Negative Bias Temperature Instability (NBTI) in Deep Sub-micron p+-gate pMOSFETS", 2000 IRW Final Report, p98-101
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O. Salmela, K. Andersson, A. Perttula, J. Sarkka and M. Tammenmaa "Modified Engelmaier's model taking account of different stress levels", Microelectron. Reliab., vol. 48, p. 773, 2008
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J. Spiegel and E.M. Bennett, Military System Reliability: Department of Defense Contributions, IRE Transactions on Reliability and Quality Control, Dec. 1960, Volume: RQC-9 Issue:3
659: 1694:, N. Blattau and C. Hillman "An Engelmaier model for leadless ceramic chip devices with Pb-free solder", J. Reliab. Inf. Anal. Cntr., vol. First Quarter, p. 7, 2007. 501: 259:
in traces can be designed out by following design rules, while electromigration at vias are primarily interfacial effects, which tend to be defect or process-driven.
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More recent work in the area of physics of failure has been focused on predicting the time to failure of new materials (i.e., lead-free solder, high-K dielectric ),
109:. This was primarily because the rapid evolution of the technology created a need to capture and predict performance several generations ahead of existing product. 1619:, E. Wyrwas, L. Condra, and A. Hava, Accurate Quantitative Physics-of-Failure Approach to Integrated Circuit Reliability, IPC APEX Expo, Las Vegas, NV, April 2011 1017:{\displaystyle Z_{0}={\frac {9.8\times 3{\sqrt {\pi /2\times {\text{PSD}}\times f_{n}\times Q}}}{f_{n}^{2}}}\quad Z_{\text{c}}={\frac {0.00022B}{chr{\sqrt {L}}}}} 274:) in modern integrated circuits (equations shown below). More recent work has attempted to aggregate these discrete algorithms into a system-level prediction. 1637:
Takeda, E. Suzuki, N. "An empirical model for device degradation due to Hot-Carrier Injection", IEEE Electron Device Letters, Vol 4, Num 4, 1983, pp. 111–113.
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many structural fields, the specific branding evolved from an attempt to better predict the reliability of early generation electronic parts and systems.
124:. Electromigration occurs when collisions of electrons cause metal atoms in a conductor to dislodge and move downstream of current flow (proportional to 1406:{\displaystyle N_{\text{f}}^{-0.6}D_{\text{f}}^{0.75}+0.9{\frac {S_{\text{u}}}{E}}\left^{0.1785\log {\frac {10^{5}}{N_{\text{f}}}}}-\Delta \epsilon =0} 1496: 1673:
D. S. Steinberg, Vibration Analysis For Electronic Equipment, John Wiley & Sons Inc., New York, first ed. 1973, second ed. 1988, third ed. 2000
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James Black, Mass Transport of Aluminum by Momentum Exchange with Conducting Electrons, 6th Annual Reliability Physics Symposium, November 1967
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George H. Ebel, Reliability Physics in Electronics: A Historical View, IEEE TRANSACTIONS ON RELIABILITY, VOL 47, NO. 3-SP 1998 SEPTEMBER SP-379
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Peck, D.S.; "New concerns about integrated circuit reliability", Electron Devices, IEEE Transactions on, vol. 26, no. 1, pp. 38–43, Jan 1979
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Leveraging this success, additional physics-of-failure based algorithms have been derived for the three other major degradation mechanisms (
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JEDEC JEP148, April 2004, Reliability Qualification of Semiconductor Devices Based on Physics of Failure Risk and Opportunity Assessment
89: 1471: 1586: 128:). Black used this knowledge, in combination with experimental findings, to describe the failure rate due to electromigration as 1682:
IPC-TR-579, Round Robin Reliability Evaluation of Small Diameter Plated-Through Holes in Printed Wiring Boards, September 1988
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Vaccaro “Reliability and the physics of failure program at RADC”, Physics of Failure in Electronics, 1963, pp. 4–10; Spartan.
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http://www.iagtcommittee.com/downloads/08-3-1%20Prakash%20Patnaik%20-%20Life%20Evaluation%20and%20Extension%20Program.pdf
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R. Lusser, Unreliability of Electronics – Cause and Cure, Redstone Arsenal, Huntsville, AL, DTIC Document
267: 1616: 492:: Predicts time to failure of wire bond / bond pad connections when exposed to elevated temperature / 105:
The initial focus of physics of failure techniques tended to be limited to degradation mechanisms in
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is plating thickness, and E and Cu label corresponding board and copper properties, respectively,
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design that leverages the knowledge and understanding of the processes and mechanisms that induce
603:{\displaystyle {\text{TTF}}=A_{0}(RH)^{-2.7}f(V)\exp \left({\frac {E_{a}}{k_{\text{B}}T}}\right)} 236: 39: 112:
One of the first major successes under predictive physics of failure was a formula developed by
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Schuegraf and Hu, "A Model for Gate Oxide Breakdown", IEEE Trans. Electron Dev., May 1994.
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is the length of PCB edge parallel to component located at the center of the board,
85: 1081:: Predicts time to failure of plated through holes exposed to temperature cycling 1692:
http://www.dfrsolutions.com/uploads/publications/2006_Blattau_IPC_working.pdf
51: 653:: Predicts time to failure of solder joints exposed to temperature cycling 493: 117: 43: 1745:
http://www.dfrsolutions.com/uploads/publications/2010_01_RAMS_Paper.pdf
440:) where A is determined empirically by normalizing the above equation, 27: 1048:
is transmissibility (assumed to be square root of natural frequency),
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is a constant based on the cross-sectional area of the interconnect,
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http://www.dfrsolutions.com/uploads/publications/ICWearout_Paper.pdf
198:{\displaystyle {\text{MTTF}}=A(J^{-n})e^{\frac {E_{\text{a}}}{kT}}} 875:: Predicts time to failure of solder joints exposed to vibration 394:
is the activation energy of HCI, typically −0.2 to −0.1 eV,
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http://theriac.org/DeskReference/PDFs/2011Q1/2011Q1-article2.pdf
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is the critical displacement (20 million cycles to failure),
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is maximum displacement, PSD is the power spectral density (
1487:/ etc. would be onerous and potentially of limited value. 629:) is a voltage function (often cited as voltage squared), 30:
to predict reliability and improve product performance.
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During the subsequent decade, the 1071:is a relative position factor, and 1063:is a component packaging constant, 380:is an empirical fitting parameter, 376:is an empirical fitting parameter, 264:time dependent dielectric breakdown 101:Early history – integrated circuits 90:United States Department of Defense 1391: 1129: 865:is the change in temperature, and 803: 794: 754: 724: 679: 465:is the activation energy of NBTI, 458:is the surface mobility constant, 14: 1549:, A Short History of Reliability. 477:Next stage – electronic packaging 1216: 970: 753: 643:is the Boltzmann constant, and 469:is the Boltzmann constant, and 398:is the Boltzmann constant, and 323:, and εox is the permittivity. 1339: 1326: 1126: 1100: 809: 797: 768: 760: 682: 673: 554: 548: 533: 523: 165: 149: 1: 473:is the absolute temperature. 369:is the failure rate of HCI, 120:to describe the behavior of 869:is solder joint thickness. 95:Rome Air Development Center 1780: 850:is an empirical constant, 636:is the activation energy, 621:is the relative humidity, 16:Mechanical design approach 647:is absolute temperature. 402:is absolute temperature. 451:is the thermal voltage, 229:grain boundary diffusion 1502:Critical plane analysis 243:is the temperature and 82:military weapon systems 1407: 1242: 1018: 826: 604: 387:is the drain voltage, 199: 1458:is the strain range. 1408: 1243: 1075:is component length. 1019: 827: 605: 268:hot carrier injection 200: 1432:is board thickness, 1428:is elastic modules, 1253: 1088: 882: 660: 502: 135: 78:electronics industry 1288: 1273: 967: 721: 107:integrated circuits 1764:Mechanical failure 1436:is hole diameter, 1403: 1274: 1256: 1238: 1067:is PCB thickness, 1014: 953: 822: 709: 600: 237:Boltzmann constant 195: 20:Physics of failure 1472:software programs 1384: 1381: 1346: 1336: 1310: 1304: 1281: 1263: 1220: 1211: 1207: 1197: 1184: 1174: 1162: 1152: 1142: 1123: 1110: 1012: 1009: 978: 968: 950: 929: 816: 791: 766: 750: 731: 716: 696: 670: 594: 587: 508: 192: 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689: 672: 671: 668: 609: 607: 606: 601: 599: 595: 593: 589: 588: 585: 578: 577: 568: 544: 543: 522: 521: 509: 506: 299: 297: 257:electromigration 204: 202: 201: 196: 194: 193: 191: 183: 182: 179: 173: 164: 163: 142: 139: 122:electromigration 1779: 1778: 1774: 1773: 1772: 1770: 1769: 1768: 1754: 1753: 1752: 1751: 1743: 1739: 1731: 1727: 1721: 1717: 1711: 1707: 1702: 1698: 1690: 1686: 1681: 1677: 1672: 1668: 1663: 1659: 1654: 1650: 1645: 1641: 1636: 1632: 1627: 1623: 1615: 1611: 1606: 1602: 1597: 1593: 1584: 1580: 1575: 1571: 1566: 1562: 1557: 1553: 1545: 1541: 1533: 1529: 1524: 1520: 1515: 1507:Maintainability 1493: 1480: 1468: 1453: 1446: 1374: 1364: 1329: 1319: 1313: 1312: 1297: 1251: 1250: 1228: 1200: 1190: 1177: 1167: 1166: 1155: 1145: 1135: 1116: 1103: 1099: 1086: 1085: 1054: 1043: 994: 986: 971: 934: 900: 885: 880: 879: 856: 841: 784: 780: 774: 739: 723: 705: 699: 698: 663: 658: 657: 642: 635: 617:is a constant, 580: 579: 569: 563: 532: 513: 500: 499: 479: 464: 457: 450: 435: 428: 422: 393: 386: 375: 368: 357: 342: 335: 306: 295: 293: 288:) exp where τo( 226: 218:current density 184: 174: 168: 152: 133: 132: 126:current density 103: 74: 65: 17: 12: 11: 5: 1777: 1775: 1767: 1766: 1756: 1755: 1750: 1749: 1737: 1725: 1715: 1705: 1696: 1684: 1675: 1666: 1657: 1648: 1639: 1630: 1621: 1609: 1600: 1591: 1578: 1569: 1560: 1551: 1539: 1527: 1517: 1516: 1514: 1511: 1510: 1509: 1504: 1499: 1492: 1489: 1479: 1476: 1467: 1464: 1451: 1444: 1414: 1413: 1402: 1399: 1396: 1393: 1390: 1377: 1371: 1367: 1361: 1358: 1355: 1350: 1345: 1341: 1332: 1328: 1325: 1322: 1316: 1309: 1300: 1294: 1291: 1286: 1277: 1271: 1268: 1259: 1248: 1235: 1231: 1227: 1224: 1215: 1203: 1193: 1189: 1180: 1170: 1158: 1148: 1138: 1134: 1131: 1128: 1119: 1115: 1106: 1102: 1096: 1093: 1052: 1039: 1025: 1024: 1008: 1003: 1000: 997: 992: 989: 983: 974: 965: 960: 956: 949: 946: 941: 937: 933: 925: 922: 918: 914: 909: 906: 903: 897: 892: 888: 854: 839: 833: 832: 820: 815: 811: 808: 805: 802: 799: 796: 787: 783: 777: 773: 770: 762: 759: 756: 749: 745: 742: 735: 729: 726: 720: 712: 708: 702: 695: 692: 687: 684: 681: 678: 675: 666: 640: 633: 611: 610: 598: 592: 583: 576: 572: 566: 562: 559: 556: 553: 550: 547: 542: 539: 535: 531: 528: 525: 520: 516: 512: 478: 475: 462: 455: 448: 433: 426: 420: 391: 384: 373: 366: 355: 340: 333: 319:) = 120 + 5.8/ 304: 249:scaling factor 231:in aluminum), 224: 206: 205: 190: 187: 177: 171: 167: 162: 159: 155: 151: 148: 145: 102: 99: 73: 70: 64: 61: 60: 59: 55: 15: 13: 10: 9: 6: 4: 3: 2: 1776: 1765: 1762: 1761: 1759: 1746: 1741: 1738: 1734: 1729: 1726: 1719: 1716: 1709: 1706: 1700: 1697: 1693: 1688: 1685: 1679: 1676: 1670: 1667: 1661: 1658: 1652: 1649: 1643: 1640: 1634: 1631: 1625: 1622: 1618: 1613: 1610: 1604: 1601: 1595: 1592: 1588: 1582: 1579: 1573: 1570: 1564: 1561: 1555: 1552: 1548: 1543: 1540: 1536: 1531: 1528: 1522: 1519: 1512: 1508: 1505: 1503: 1500: 1498: 1495: 1494: 1490: 1488: 1486: 1485:power cycling 1477: 1475: 1473: 1465: 1463: 1462:environment. 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397: 390: 383: 379: 372: 365: 361: 354: 350: 346: 339: 332: 328: 324: 322: 318: 314: 310: 303: 291: 287: 283: 279: 275: 273: 269: 265: 260: 258: 252: 250: 246: 242: 238: 234: 230: 223: 219: 215: 211: 188: 185: 175: 169: 160: 157: 153: 146: 143: 131: 130: 129: 127: 123: 119: 115: 110: 108: 100: 98: 96: 91: 87: 83: 79: 72:The beginning 71: 69: 62: 56: 53: 49: 45: 41: 36: 35: 34: 31: 29: 25: 21: 1740: 1728: 1718: 1708: 1699: 1687: 1678: 1669: 1660: 1651: 1642: 1633: 1624: 1612: 1603: 1594: 1581: 1572: 1563: 1554: 1542: 1530: 1521: 1481: 1469: 1460: 1455: 1448: 1441: 1437: 1433: 1429: 1425: 1421: 1417: 1415: 1078: 1077: 1072: 1068: 1064: 1060: 1056: 1049: 1045: 1040: 1036: 1032: 1028: 1026: 872: 871: 866: 862: 858: 851: 847: 843: 836: 834: 650: 649: 644: 637: 630: 626: 622: 618: 614: 612: 489: 488: 484: 480: 470: 466: 459: 452: 445: 441: 437: 430: 423: 417: 413: 409: 405: 404: 399: 395: 388: 381: 377: 370: 363: 359: 352: 348: 344: 337: 330: 326: 325: 320: 316: 312: 308: 301: 289: 285: 281: 277: 276: 261: 253: 244: 240: 232: 221: 213: 209: 207: 111: 104: 86:World War II 75: 66: 32: 19: 18: 1478:Limitations 1466:Recent work 114:James Black 76:Within the 24:reliability 1513:References 1079:IPC-TR-579 651:Engelmaier 1395:ϵ 1392:Δ 1389:− 1360:⁡ 1324:⁡ 1267:− 1226:≤ 1223:σ 1219:for  1130:Δ 1118:α 1114:− 1105:α 1092:σ 945:× 932:× 924:× 913:π 905:× 873:Steinberg 804:Δ 801:α 795:Δ 755:Δ 741:− 725:Δ 711:ϵ 680:% 561:⁡ 538:− 362:) where 158:− 52:corrosion 1758:Category 1733:NASA.gov 1491:See also 765:leadless 719:′ 494:humidity 118:Motorola 63:Overview 44:fracture 988:0.00022 444:= 2.9, 351:) exp(− 235:is the 216:is the 84:during 40:fatigue 28:failure 1589:(IRPS) 1416:where 1354:0.1785 1035:/Hz), 1027:where 835:where 613:where 270:, and 208:where 50:, and 429:exp(− 416:εoxm 343:exp(− 300:exp(− 284:= τo( 247:is a 1723:1992 1713:2009 1344:0.36 1285:0.75 490:Peck 406:NBTI 292:) = 278:TDDB 140:MTTF 48:wear 1357:log 1321:exp 1293:0.9 1270:0.6 928:PSD 902:9.8 558:exp 541:2.7 507:TTF 367:HCI 334:HCI 327:HCI 311:), 294:5.4 116:of 1760:: 1456:De 1366:10 1206:Cu 1196:Cu 1161:Cu 1122:Cu 677:50 619:RH 438:kT 436:/ 412:= 408:: 360:kT 358:/ 349:VD 336:= 329:: 321:kT 309:kT 307:/ 298:10 280:: 266:, 239:, 220:, 46:, 42:, 1452:f 1449:D 1445:u 1442:S 1438:t 1434:d 1430:h 1426:E 1422:T 1418:a 1401:0 1398:= 1380:f 1376:N 1370:5 1349:] 1340:) 1335:f 1331:D 1327:( 1315:[ 1308:E 1303:u 1299:S 1290:+ 1280:f 1276:D 1262:f 1258:N 1234:Y 1230:S 1214:, 1202:E 1192:A 1188:+ 1183:E 1179:E 1173:E 1169:A 1157:E 1151:E 1147:E 1141:E 1137:A 1133:T 1127:) 1109:E 1101:( 1095:= 1073:L 1069:r 1065:h 1061:c 1057:B 1053:c 1050:Z 1046:Q 1041:n 1037:f 1033:g 1029:Z 1007:L 1002:r 999:h 996:c 991:B 982:= 977:c 973:Z 964:2 959:n 955:f 948:Q 940:n 936:f 921:2 917:/ 908:3 896:= 891:0 887:Z 867:h 863:T 859:α 855:D 852:L 848:F 844:c 840:f 837:ε 819:] 814:h 810:) 807:T 798:( 790:D 786:L 782:F 776:[ 772:= 769:) 761:( 758:D 748:c 744:1 734:] 728:D 715:f 707:2 701:[ 694:2 691:1 686:= 683:) 674:( 669:f 665:N 645:T 641:B 638:k 634:a 631:E 627:V 625:( 623:f 615:A 597:) 591:T 586:B 582:k 575:a 571:E 565:( 555:) 552:V 549:( 546:f 534:) 530:H 527:R 524:( 519:0 515:A 511:= 471:T 467:k 463:a 460:E 456:p 453:μ 449:T 446:V 442:m 434:a 431:E 427:p 424:μ 421:T 418:V 414:A 410:λ 400:T 396:k 392:a 389:E 385:D 382:V 378:β 374:3 371:A 364:λ 356:a 353:E 347:/ 345:β 341:3 338:A 331:λ 317:T 315:( 313:G 305:a 302:E 296:× 290:T 286:T 282:τ 245:n 241:T 233:k 225:a 222:E 214:J 210:A 189:T 186:k 180:a 176:E 170:e 166:) 161:n 154:J 150:( 147:A 144:= 54:.

Index

reliability
failure
fatigue
fracture
wear
corrosion
electronics industry
military weapon systems
World War II
United States Department of Defense
Rome Air Development Center
integrated circuits
James Black
Motorola
electromigration
current density
current density
grain boundary diffusion
Boltzmann constant
scaling factor
electromigration
time dependent dielectric breakdown
hot carrier injection
negative bias temperature instability
humidity
software programs
power cycling
List of finite element software packages
Critical plane analysis
Maintainability

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