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Overdrive voltage

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is defined as the minimum voltage required between gate and source to turn the transistor on (allow it to conduct electricity). Due to this definition, overdrive voltage is also known as "excess gate voltage" or "effective voltage." Overdrive voltage can be found using the simple equation:
152:, the drain voltage relative to the source, which can be used to determine the region of operation of the MOSFET. The table below shows how to use overdrive voltage to understand what region of operation the MOSFET is in: 259:> 0) will attract electrons and repel holes, and this is called depletion because we are depleting the number of holes. At a critical voltage called the threshold voltage (V 263:) the channel will actually be so depleted of holes and rich in electrons that it will INVERT to being n-type silicon, and this is called the inversion region. 251:
In an NMOS transistor, the channel region under zero bias has an abundance of holes (i.e., it is p-type silicon). By applying a negative gate bias (V
346: 40: 58: 374: 274:, we are said to be then overdriving the gate by creating a stronger channel, hence the overdrive (often called V 379: 357: 318: 313: 142: 342: 308: 93: 384: 255:< 0) we attract more holes, and this is called accumulation. A positive gate voltage (V 88:. The overdrive voltage is defined as the voltage between transistor gate and source (V 368: 133:) of the transistor, an important property of amplifier circuits. By increasing V 85: 341:
Sedra and Smith, Microelectronic Circuits, Fifth Edition, (2004) Chapter 4,
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The MOSFET is delivering current in a linear relationship to the voltage (V
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is important as it directly affects the output drain terminal current (I
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The MOSFET is turned off, and should not be delivering any current.
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Overdrive voltage is also important because of its relationship to V
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provides insufficient context for those unfamiliar with the subject
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The MOSFET is delivering a high amount of current, and changing V
15: 36: 81:, is typically referred to in the context of 8: 248:A more physics-related explanation follows: 59:Learn how and when to remove this message 154: 334: 358:Lecture Note of Prof Liu, UC Berkeley 41:providing more context for the reader 7: 14: 20: 266:As we increase this voltage, V 1: 401: 74:, usually abbreviated as 141:can be increased until 375:Electrical parameters 319:Short-channel effect 314:Electronic amplifier 161:Region of Operation 92:) in excess of the 37:improve the article 286:) is defined as (V 347:978-0-19-533883-6 309:Threshold voltage 246: 245: 187:Saturation (CCR) 94:threshold voltage 72:Overdrive voltage 69: 68: 61: 392: 360: 355: 349: 339: 217:Triode (Linear) 155: 64: 57: 53: 50: 44: 24: 23: 16: 400: 399: 395: 394: 393: 391: 390: 389: 365: 364: 363: 356: 352: 340: 336: 332: 300: 293: 289: 285: 281: 277: 273: 269: 262: 258: 254: 236: 232: 223: 214: 210: 206: 202: 194:won't do much. 193: 184: 180: 176: 172: 151: 140: 136: 132: 128: 123: 116: 112: 108: 103: 99: 91: 79: 65: 54: 48: 45: 34: 25: 21: 12: 11: 5: 398: 396: 388: 387: 382: 380:Semiconductors 377: 367: 366: 362: 361: 350: 333: 331: 328: 327: 326: 321: 316: 311: 306: 299: 296: 291: 287: 283: 279: 275: 271: 267: 260: 256: 252: 244: 243: 240: 237: 234: 230: 226: 225: 221: 218: 215: 212: 208: 204: 200: 196: 195: 191: 188: 185: 182: 178: 174: 170: 166: 165: 162: 159: 149: 138: 134: 130: 126: 122: 119: 114: 110: 106: 101: 97: 89: 77: 67: 66: 28: 26: 19: 13: 10: 9: 6: 4: 3: 2: 397: 386: 383: 381: 378: 376: 373: 372: 370: 359: 354: 351: 348: 344: 338: 335: 329: 325: 322: 320: 317: 315: 312: 310: 307: 305: 302: 301: 297: 295: 264: 249: 241: 238: 228: 227: 219: 216: 198: 197: 189: 186: 168: 167: 163: 160: 157: 156: 153: 146: 144: 120: 118: 95: 87: 84: 80: 73: 63: 60: 52: 42: 38: 32: 29:This article 27: 18: 17: 353: 337: 265: 250: 247: 164:Description 147: 145:is reached. 124: 75: 71: 70: 55: 49:October 2009 46: 35:Please help 30: 158:Conditions 86:transistors 369:Categories 330:References 270:, beyond V 143:saturation 121:Technology 100:) where V 298:See also 385:MOSFETs 324:Biasing 239:Cutoff 345:  304:MOSFET 282:, or V 233:< V 211:> V 203:< V 181:> V 173:> V 83:MOSFET 343:ISBN 294:). 290:− V 278:, V 224:). 207:; V 177:; V 137:, I 113:− V 109:= V 39:by 371:: 292:TH 288:GS 284:on 280:od 276:ov 272:TH 268:GS 261:TH 257:GS 253:GS 235:TH 231:GS 222:DS 213:TH 209:GS 205:OV 201:DS 192:DS 183:TH 179:GS 175:OV 171:DS 150:DS 135:OV 127:OV 117:. 115:TH 111:GS 107:OV 102:TH 98:TH 96:(V 90:GS 78:OV 229:V 199:V 169:V 139:D 131:D 125:V 105:V 76:V 62:) 56:( 51:) 47:( 43:. 33:.

Index

improve the article
providing more context for the reader
Learn how and when to remove this message
MOSFET
transistors
threshold voltage
saturation
MOSFET
Threshold voltage
Electronic amplifier
Short-channel effect
Biasing
ISBN
978-0-19-533883-6
Lecture Note of Prof Liu, UC Berkeley
Categories
Electrical parameters
Semiconductors
MOSFETs

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