101:
grain in an otherwise inactive microstructure and allowing the grain to rotate and coalesce with a neighbor grain. However, due to competition with the surrounding grains, rotation may proceed erratically. Coupled with spontaneous activation, this makes abnormal grain growth a largely erratic process. While the activation of grain boundaries (leading to rotation and growth) can occur at temperatures well below the temperatures required for partial melting of the grain boundaries, the effect is emphasized when melting occurs.
17:
138:
100:
Abnormal grain growth occurs due to very high local rates of interface migration and is enhanced by the localized formation of liquid at grain boundaries. In 2023, Liss et al. have shown that the spontaneous activation of a grain boundary opens diffusion pathways, leading to the activation of one
252:
has been shown to exhibit improved fracture toughness as the result of AGG processes yielding elongated crack-tip/wake-bridging grains, with consequences for applications in ballistic armor. This enhancement of fracture toughness in ceramic materials via crack-bridging resulting from AGG is
70:, this phenomenon can result in the formation of elongated prismatic, acicular (needle-like) grains in a densified matrix. This microstructure has the potential to improve fracture toughness by impeding the propagation of cracks.
109:
In the sintering of ceramic materials, abnormal grain growth is often viewed as an undesirable phenomenon because rapidly growing grains may lower the hardness of the bulk material through
584:
Dressler, W.; Kleebe, H.-J.; Hoffmann, M. J.; RΓΌhle, M.; Petzow, G. (1996). "Model experiments concerning abnormal grain growth in silicon nitride".
389:
260:
and dielectric applications, is known to exhibit AGG with significant consequences on the electronic performance of the material
483:
78:
Abnormal grain growth (AGG) is encountered in metallic or ceramic systems exhibiting one or more of several characteristics:
274:
have been observed to exhibit AGG without the formation of liquid as the result of polytype interfaces between solid phases
224:
has been reported to exhibit AGG of faceted grains in the presence of a liquid cobalt-containing phase at grain boundaries
725:
110:
182:
parent-phase in the form of abnormally large grains existing in a matrix of finer, equiaxed anatase or rutile grains.
715:
540:
Park, Y. J.; Hwang, N. M.; Yoon, D. Y. (1996). "Abnormal growth of faceted (WC) grains in a (Co) liquid matrix".
424:
126:
720:
305:
82:
Systems with secondary phase inclusions, precipitates or impurities above a certain threshold concentration.
122:
542:
381:
638:
550:
443:
93:
60:
246:
precursor. This type of grain growth is of importance in the toughening of silicon nitride materials
16:
666:
586:
137:
218:
is known to exhibit abnormal grain growth with profound consequences on piezoelectric performance.
566:
514:
459:
433:
411:
350:
346:"Toughness properties of a silicon carbide with an in situ induced heterogeneous grain structure"
700:
385:
67:
674:
646:
594:
558:
522:
492:
451:
358:
263:
221:
145:
56:
695:
477:
Liss, K.-D.; Xu, P.G.; Shiro, A.; Zhang, S.Y.; Yukutake, E.; Shobu, T.; Akita, K. (2023).
249:
227:
211:
642:
554:
447:
630:
526:
362:
315:
295:
257:
86:
21:
678:
709:
598:
570:
168:
463:
455:
290:
285:
271:
238:) may exhibit AGG depending on the size distribution of Ξ²-phase material in an Ξ±-Si
48:
25:
52:
253:
consistent with reported morphological effects on crack propagation in ceramics
310:
300:
118:
479:"Abnormal Grain Growth: A Spontaneous Activation of Competing Grain Rotation"
664:
Recnik, A. (2001). "Polytype induced exaggerated grain growth in ceramics".
320:
612:
Lee, H.-Y.; Freer, R. (1997). "The mechanism of abnormal grain growth in Sr
497:
478:
562:
185:
179:
650:
201:
197:
172:
160:
152:
142:
114:
345:
438:
15:
512:
Bae, I.-J.; Baik, S. (1997). "Abnormal grain growth of alumina".
20:
Abnormal or discontinuous grain growth leads to a heterogeneous
204:
dopants/impurities has been reported to exhibit undesirable AGG.
410:
Hanaor, D. A. H.; Xu, W.; Ferry, M.; Sorrell, C. C. (2012).
51:
phenomenon in which certain energetically favorable grains (
378:
121:
in ceramic materials. Additionally, AGG is undesirable in
178:
dopant, rutile has been observed to crystallise from an
171:. In the presence of alkali dopants or a solid-state
117:
to bring about controlled AGG may be used to impart
696:Abnormal Grain Growth by Cyclic Heat Treatment
167:) frequently exhibits a prismatic or acicular
8:
113:. However, the controlled introduction of
496:
437:
136:
45:secondary recrystallisation grain growth
333:
701:University of Virginia, Surface Energy
405:
403:
401:
339:
337:
7:
412:"Abnormal grain growth of rutile TiO
344:Padture, N. P.; Lawn, B. R. (1994).
256:Strontium barium niobate, used for
527:10.1111/j.1151-2916.1997.tb02957.x
363:10.1111/j.1151-2916.1994.tb04637.x
141:Abnormal grain growth observed in
85:Systems with a highly anisotropic
14:
270:, perovskite) systems doped with
59:of finer grains, resulting in a
151:, induced by the presence of a
28:grow much faster than the rest.
484:Advanced Engineering Materials
456:10.1016/j.jcrysgro.2012.08.015
382:Elsevier Butterworth-Heinemann
1:
679:10.1016/s0955-2219(01)00184-4
599:10.1016/0955-2219(95)00175-1
742:
37:discontinuous grain growth
24:where a limited number of
425:Journal of Crystal Growth
63:grain-size distribution.
125:, as it may degrade the
376:Kang, S.-J. L. (2005).
111:Hall-Petch-type effects
498:10.1002/adem.202300470
156:
123:piezoelectric ceramics
39:, also referred to as
29:
543:Metall. Mater. Trans.
214:with an excess of TiO
140:
19:
127:piezoelectric effect
94:chemical equilibrium
55:) grow rapidly in a
726:Mineralogy concepts
667:J. Eur. Ceram. Soc.
643:1997JAP....81..376L
587:J. Eur. Ceram. Soc.
555:1996MMTA...27.2809P
448:2012JCrGr.359...83H
563:10.1007/bf02652373
515:J. Am. Ceram. Soc.
351:J. Am. Ceram. Soc.
157:
30:
716:Materials science
673:(10): 2117β2121.
357:(10): 2518β2522.
92:Systems far from
68:ceramic materials
733:
683:
682:
661:
655:
654:
651:10.1063/1.364122
609:
603:
602:
581:
575:
574:
549:(9): 2809β2819.
537:
531:
530:
521:(5): 1149β1156.
509:
503:
502:
500:
474:
468:
467:
441:
416:induced by ZrSiO
407:
396:
395:
373:
367:
366:
341:
264:Calcium titanate
222:Tungsten carbide
155:secondary phase.
119:fibre-toughening
741:
740:
736:
735:
734:
732:
731:
730:
721:Crystallography
706:
705:
692:
687:
686:
663:
662:
658:
627:
623:
619:
615:
611:
610:
606:
583:
582:
578:
539:
538:
534:
511:
510:
506:
476:
475:
471:
419:
415:
409:
408:
399:
392:
375:
374:
370:
343:
342:
335:
330:
325:
281:
269:
250:Silicon carbide
245:
241:
237:
233:
228:Silicon nitride
217:
212:barium titanate
210:
195:
191:
176:
166:
149:
135:
133:Example systems
107:
76:
12:
11:
5:
739:
737:
729:
728:
723:
718:
708:
707:
704:
703:
698:
691:
690:External links
688:
685:
684:
656:
637:(1): 376β382.
631:J. Appl. Phys.
625:
621:
617:
613:
604:
576:
532:
504:
491:(4): 2300470.
469:
417:
413:
397:
390:
368:
332:
331:
329:
326:
324:
323:
318:
316:Microstructure
313:
308:
303:
298:
296:Grain boundary
293:
288:
282:
280:
277:
276:
275:
267:
261:
258:electro-optics
254:
247:
243:
239:
235:
231:
225:
219:
215:
208:
205:
193:
189:
183:
174:
164:
147:
134:
131:
106:
103:
98:
97:
90:
87:surface energy
83:
75:
72:
22:microstructure
13:
10:
9:
6:
4:
3:
2:
738:
727:
724:
722:
719:
717:
714:
713:
711:
702:
699:
697:
694:
693:
689:
680:
676:
672:
669:
668:
660:
657:
652:
648:
644:
640:
636:
633:
632:
608:
605:
600:
596:
592:
589:
588:
580:
577:
572:
568:
564:
560:
556:
552:
548:
545:
544:
536:
533:
528:
524:
520:
517:
516:
508:
505:
499:
494:
490:
486:
485:
480:
473:
470:
465:
461:
457:
453:
449:
445:
440:
435:
431:
427:
426:
421:
406:
404:
402:
398:
393:
391:9780080493077
387:
383:
379:
372:
369:
364:
360:
356:
353:
352:
347:
340:
338:
334:
327:
322:
319:
317:
314:
312:
309:
307:
304:
302:
299:
297:
294:
292:
289:
287:
284:
283:
278:
273:
265:
262:
259:
255:
251:
248:
229:
226:
223:
220:
213:
206:
203:
199:
187:
184:
181:
177:
170:
162:
159:
158:
154:
150:
144:
139:
132:
130:
128:
124:
120:
116:
112:
104:
102:
95:
91:
88:
84:
81:
80:
79:
73:
71:
69:
64:
62:
58:
54:
50:
46:
42:
38:
34:
27:
23:
18:
670:
665:
659:
634:
629:
607:
590:
585:
579:
546:
541:
535:
518:
513:
507:
488:
482:
472:
429:
423:
377:
371:
354:
349:
291:Fractography
286:Crystallites
169:growth habit
108:
105:Significance
99:
77:
65:
53:crystallites
49:grain growth
44:
40:
36:
32:
31:
628:ceramics".
593:(1): 3β14.
306:Micrography
41:exaggerated
710:Categories
328:References
311:Micrograph
301:Metallurgy
74:Mechanisms
571:137080942
439:1303.2761
432:: 83β91.
321:Sintering
464:94096447
279:See also
33:Abnormal
639:Bibcode
551:Bibcode
444:Bibcode
200:and/or
186:Alumina
180:anatase
115:dopants
61:bimodal
47:, is a
569:
462:
388:
266:(CaTiO
202:yttria
198:silica
161:Rutile
153:zircon
143:Rutile
57:matrix
26:grains
567:S2CID
460:S2CID
434:arXiv
207:BaTiO
196:with
173:ZrSiO
386:ISBN
188:, Al
163:(TiO
675:doi
647:doi
618:0.4
614:0.6
595:doi
559:doi
523:doi
493:doi
452:doi
430:359
359:doi
272:BaO
230:(Si
146:TiO
66:In
43:or
35:or
712::
671:21
645:.
635:81
620:Nb
616:Ba
591:16
565:.
557:.
547:27
519:80
489:26
487:.
481:.
458:.
450:.
442:.
428:.
422:.
400:^
384:.
380:.
355:77
348:.
336:^
129:.
681:.
677::
653:.
649::
641::
626:6
624:O
622:2
601:.
597::
573:.
561::
553::
529:.
525::
501:.
495::
466:.
454::
446::
436::
420:"
418:4
414:2
394:.
365:.
361::
268:3
244:4
242:N
240:3
236:4
234:N
232:3
216:2
209:3
194:3
192:O
190:2
175:4
165:2
148:2
96:.
89:.
Text is available under the Creative Commons Attribution-ShareAlike License. Additional terms may apply.
