Knowledge (XXG)

Compact Model Coalition

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To address the increasing need for Reliability (ageing) simulation the CMC nominated the OMI Interface as the new EDA vendor independent solution for ageing simulations. Technically the Interface is very close the TMI2 Interface developed by
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MEXTRAM, a compact model for bipolar transistors that aims to support the design of bipolar transistor circuits at high frequencies in Si and SiGe based process technologies. MEXTRAM was originally developed at
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It was formed in August, 1996, for the purpose developing and standardizing the use and implementation of SPICE models and the model interfaces. In May 2013, the
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New models are submitted to the Coalition, where their technical merits are discussed, and then potential standard models are voted on.
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announced the transfer of the Compact Model Council to Si2 and a renaming to Compact Model Coalition.
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were largely proprietary, which severely limited the choice of simulators that could be used.
41: 152: 385: 214:. Government Electronics & Information Technology Association (GEIA). Archived from 196:. Government Electronics & Information Technology Association (GEIA). Archived from 37: 455: 133: 70: 52: 268: 40:) and earlier models become inaccurate. Before this group was formed, new 335: 441: 282: 215: 197: 61:
Some of the models supported by the Compact Modeling Coalition include:
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industry formed to choose, maintain and promote the use of standard
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Site map of CMC website including links to working groups
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BSIM4, a more modern MOSFET model, also from UC Berkeley.
36:) need to add device models as technology advances (see 32:. Commercial and industrial analog simulators (such as 83:
PSP, another MOSFET model. PSP originally stood for
95:, and Philips spun off their semiconductor group as 151:ASM-HEMT, and MVSG, the newest standard models for 255:"SIMULATION: PSP transistor tapped for standard" 8: 99:. PSP is now developed and supported at 185: 144:and is now developed and supported at 7: 416:. MIT, hosted by Si2. Archived from 117:MOSFETs, developed and supported by 113:L-UTSOI, a model for fully-depleted 234:Silicon Integration Initiative, Inc 14: 130:Dresden University of Technology 124:HICUM or HIgh CUrrent Model for 212:"Standard Models and Downloads" 49:Silicon Integration Initiative 1: 194:"CMC - Compact Model Council" 174:Electronic circuit simulation 26:Electronic Design Automation 24:) is a working group in the 352:. CEA-Leti. 19 October 2013 317:. CEA-Leti. 19 October 2013 30:semiconductor device models 483: 442:Member list at CMC website 338:. BSIM Group, UC Berkeley. 285:. BSIM Group, UC Berkeley. 271:. BSIM Group, UC Berkeley. 91:, but one author moved to 370:M. Schröter, L.Hofmann. 18:Compact Model Coalition 467:Electronic engineering 299:. ASU. Archived from 106:BSIMSOI, a model for 22:Compact Model Council 388:. Auburn University. 372:"HICUM Introduction" 115:silicon on insulator 108:silicon on insulator 462:Transistor modeling 400:"ASM-HEMT Homepage" 126:bipolar transistors 414:"MVSG Source code" 386:"MEXTRAM Homepage" 230:"CMC Moves to Si2" 155:(GaN) transistors. 142:NXP Semiconductors 97:NXP Semiconductors 146:Auburn University 42:transistor models 474: 429: 428: 426: 425: 410: 404: 403: 396: 390: 389: 382: 376: 375: 367: 361: 360: 358: 357: 346: 340: 339: 336:"BSIM-SOI Model" 332: 326: 325: 323: 322: 311: 305: 304: 293: 287: 286: 279: 273: 272: 265: 259: 258: 250: 244: 243: 241: 240: 226: 220: 219: 208: 202: 201: 190: 482: 481: 477: 476: 475: 473: 472: 471: 452: 451: 438: 433: 432: 423: 421: 412: 411: 407: 398: 397: 393: 384: 383: 379: 369: 368: 364: 355: 353: 350:"L-UTSOI Model" 348: 347: 343: 334: 333: 329: 320: 318: 313: 312: 308: 295: 294: 290: 281: 280: 276: 267: 266: 262: 253:Dylan McGrath. 252: 251: 247: 238: 236: 228: 227: 223: 210: 209: 205: 192: 191: 187: 182: 170: 153:Gallium Nitride 132:, Germany, and 12: 11: 5: 480: 478: 470: 469: 464: 454: 453: 450: 449: 444: 437: 436:External links 434: 431: 430: 405: 391: 377: 362: 341: 327: 306: 303:on 2007-10-17. 288: 274: 260: 245: 221: 218:on 2011-07-20. 203: 200:on 2011-05-11. 184: 183: 181: 178: 177: 176: 169: 166: 157: 156: 149: 137: 128:, from CEDIC, 122: 111: 104: 81: 78: 20:(formerly the 13: 10: 9: 6: 4: 3: 2: 479: 468: 465: 463: 460: 459: 457: 448: 445: 443: 440: 439: 435: 420:on 2018-05-09 419: 415: 409: 406: 402:. IIT Kanpur. 401: 395: 392: 387: 381: 378: 374:. TU Dresden. 373: 366: 363: 351: 345: 342: 337: 331: 328: 316: 310: 307: 302: 298: 292: 289: 284: 283:"BSIM4 Model" 278: 275: 270: 269:"BSIM3 Model" 264: 261: 256: 249: 246: 235: 231: 225: 222: 217: 213: 207: 204: 199: 195: 189: 186: 179: 175: 172: 171: 167: 165: 163: 154: 150: 147: 143: 138: 135: 131: 127: 123: 120: 116: 112: 109: 105: 102: 98: 94: 90: 86: 82: 79: 76: 72: 68: 64: 63: 62: 59: 56: 54: 50: 45: 43: 39: 35: 31: 27: 23: 19: 422:. Retrieved 418:the original 408: 394: 380: 365: 354:. Retrieved 344: 330: 319:. Retrieved 309: 301:the original 291: 277: 263: 248: 237:. Retrieved 233: 224: 216:the original 206: 198:the original 188: 158: 134:UC San Diego 60: 57: 46: 21: 17: 15: 71:UC Berkeley 69:model from 53:TechAmerica 38:Moore's law 456:Categories 424:2018-05-08 356:2023-08-17 321:2023-08-17 257:. EETimes. 239:2015-10-19 180:References 85:Penn State 51:(Si2) and 65:BSIM3, a 168:See also 119:CEA-Leti 110:MOSFETs. 101:CEA-Leti 89:Philips 136:, USA. 67:MOSFET 315:"PSP" 297:"PSP" 73:(see 34:SPICE 162:TSMC 75:BSIM 16:The 93:ASU 458:: 232:. 77:). 427:. 359:. 324:. 242:. 148:. 121:. 103:. 87:-

Index

Electronic Design Automation
semiconductor device models
SPICE
Moore's law
transistor models
Silicon Integration Initiative
TechAmerica
MOSFET
UC Berkeley
BSIM
Penn State
Philips
ASU
NXP Semiconductors
CEA-Leti
silicon on insulator
silicon on insulator
CEA-Leti
bipolar transistors
Dresden University of Technology
UC San Diego
NXP Semiconductors
Auburn University
Gallium Nitride
TSMC
Electronic circuit simulation
"CMC - Compact Model Council"
the original
"Standard Models and Downloads"
the original

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