1986:, occurs at a precisely defined voltage, allowing the diode to be used as a precision voltage reference. The term Zener diodes is colloquially applied to several types of breakdown diodes, but strictly speaking, Zener diodes have a breakdown voltage of below 5 volts, whilst avalanche diodes are used for breakdown voltages above that value. In practical voltage reference circuits, Zener and switching diodes are connected in series and opposite directions to balance the temperature coefficient response of the diodes to near-zero. Some devices labeled as high-voltage Zener diodes are actually avalanche diodes (see above). Two (equivalent) Zeners in series and in reverse order, in the same package, constitute a transient absorber (or
1611:. This occurs when the reverse electric field applied across the p–n junction causes a wave of ionization, reminiscent of an avalanche, leading to a large current. Avalanche diodes are designed to break down at a well-defined reverse voltage without being destroyed. The difference between the avalanche diode (which has a reverse breakdown above about 6.2 V) and the Zener is that the channel length of the former exceeds the mean free path of the electrons, resulting in many collisions between them on the way through the channel. The only practical difference between the two types is they have temperature coefficients of opposite polarities.
2076:
1559:
2561:. For longer-range (about a centimeter) particles, they need a very large depletion depth and large area. For short-range particles, they need any contact or un-depleted semiconductor on at least one surface to be very thin. The back-bias voltages are near breakdown (around a thousand volts per centimeter). Germanium and silicon are common materials. Some of these detectors sense position as well as energy. They have a finite life, especially when detecting heavy particles, because of radiation damage. Silicon and germanium are quite different in their ability to convert
311:
2133:
2557:, s of energy, generates many charge carrier pairs, as its energy is deposited in the semiconductor material. If the depletion layer is large enough to catch the whole shower or to stop a heavy particle, a fairly accurate measurement of the particle's energy can be made, simply by measuring the charge conducted and without the complexity of a magnetic spectrometer, etc. These semiconductor radiation detectors need efficient and uniform charge collection and low leakage current. They are often cooled by
1000:
2062:
2316:
1330:
2091:
2119:
1878:) acts as recombination centers, which helps the fast recombination of minority carriers. This allows the diode to operate at higher signal frequencies, at the expense of a higher forward voltage drop. Gold-doped diodes are faster than other p–n diodes (but not as fast as Schottky diodes). They also have less reverse-current leakage than Schottky diodes (but not as good as other p–n diodes). A typical example is the 1N914.
2048:
571:
2105:
1254:
2033:
1327:. For a normal P–N rectifier diode, the reverse current through the device is in the micro-ampere (μA) range. However, this is temperature dependent, and at sufficiently high temperatures, a substantial amount of reverse current can be observed (mA or more). There is also a tiny surface leakage current caused by electrons simply going around the diode as though it were an imperfect insulator.
2752:
2385:
2021:
831:
881:
90:
45:
1314:), and avalanche does not occur. Both devices, however, do have a limit to the maximum current and power they can withstand in the clamped reverse-voltage region. Also, following the end of forwarding conduction in any diode, there is reverse current for a short time. The device does not attain its full blocking capability until the reverse current ceases.
942:
99:
2676:
707:) during World War II for application in radar. After World War II, AT&T used these in its microwave towers that criss-crossed the United States, and many radar sets use them even in the 21st century. In 1946, Sylvania began offering the 1N34 crystal diode. During the early 1950s, junction diodes were developed.
1362:: At larger forward currents the current–voltage curve starts to be dominated by the ohmic resistance of the bulk semiconductor. The curve is no longer exponential, it is asymptotic to a straight line whose slope is the bulk resistance. This region is particularly important for power diodes and can be modeled by a
1949:, allowing amplification of signals and very simple bistable circuits. Because of the high carrier concentration, tunnel diodes are very fast, may be used at low (mK) temperatures, high magnetic fields, and in high radiation environments. Because of these properties, they are often used in spacecraft.
1585:
was used. Their low efficiency required a much higher forward voltage to be applied (typically 1.4 to 1.7 V per "cell", with multiple cells stacked so as to increase the peak inverse voltage rating for application in high voltage rectifiers), and required a large heat sink (often an extension of
2623:
may use diodes in this way to ensure that the current is only drawn from the battery when necessary. Likewise, small boats typically have two circuits each with their own battery/batteries: one used for engine starting; one used for domestics. Normally, both are charged from a single alternator, and
2441:
Diodes are frequently used to conduct damaging high voltages away from sensitive electronic devices. They are usually reverse-biased (non-conducting) under normal circumstances. When the voltage rises above the normal range, the diodes become forward-biased (conducting). For example, diodes are used
1501:
In detector and mixer applications, the current can be estimated by a Taylor's series. The odd terms can be omitted because they produce frequency components that are outside the pass band of the mixer or detector. Even terms beyond the second derivative usually need not be included because they are
2687:
can take a periodic alternating current signal that oscillates between positive and negative values, and vertically displace it such that either the positive or the negative peaks occur at a prescribed level. The clamper does not restrict the peak-to-peak excursion of the signal, it moves the whole
2219:
was introduced in 1966 and comprises two letters followed by the part code. The first letter represents the semiconductor material used for the component (A = germanium and B = silicon) and the second letter represents the general function of the part (for diodes, A = low-power/signal, B = variable
1182:
ion is left behind in the N-doped region, and a negatively charged dopant ion is created in the P-doped region. As recombination proceeds and more ions are created, an increasing electric field develops through the depletion zone that acts to slow and then finally stop recombination. At this point,
646:
in
November 1905). Throughout the vacuum tube era, valve diodes were used in almost all electronics such as radios, televisions, sound systems, and instrumentation. They slowly lost market share beginning in the late 1940s due to selenium rectifier technology and then to semiconductor diodes during
2432:
Since most electronic circuits can be damaged when the polarity of their power supply inputs are reversed, a series diode is sometimes used to protect against such situations. This concept is known by multiple naming variations that mean the same thing: reverse voltage protection, reverse polarity
1028:
type. Non-welded contact construction utilizes the
Schottky barrier principle. The metal side is the pointed end of a small diameter wire that is in contact with the semiconductor crystal. In the welded contact type, a small P region is formed in the otherwise N-type crystal around the metal point
1244:
However, if the polarity of the external voltage opposes the built-in potential, recombination can once again proceed, resulting in a substantial electric current through the p–n junction (i.e. substantial numbers of electrons and holes recombine at the junction) that increases exponentially with
678:
crystal detector in 1903 and received a patent for it on 20 November 1906. Other experimenters tried a variety of other minerals as detectors. Semiconductor principles were unknown to the developers of these early rectifiers. During the 1930s understanding of physics advanced and in the mid-1930s
1970:) circuits, allowing tuning circuits, such as those in television receivers, to lock quickly on to the frequency. They also enabled tunable oscillators in the early discrete tuning of radios, where a cheap and stable, but fixed-frequency, crystal oscillator provided the reference frequency for a
1845:
devices and so do not suffer from minority carrier storage problems that slow down many other diodes—so they have a faster reverse recovery than p–n junction diodes. They also tend to have much lower junction capacitance than p–n diodes, which provides for high switching speeds and their use in
1534:
from the diode. During this recovery time, the diode can actually conduct in the reverse direction. This might give rise to a large current in the reverse direction for a short time while the diode is reverse biased. The magnitude of such a reverse current is determined by the operating circuit
612:
observed that a grounded, white-hot metal ball brought in close proximity to an electroscope would discharge a positively charged electroscope, but not a negatively charged electroscope. In 1880, Thomas Edison observed unidirectional current between heated and unheated elements in a bulb, later
1158:
region where there is a large population of holes (vacant places for electrons) with which the electrons "recombine". When a mobile electron recombines with a hole, both hole and electron vanish, leaving behind an immobile positively charged donor (dopant) on the N side and negatively charged
594:. Until the 1950s, vacuum diodes were used more frequently in radios because the early point-contact semiconductor diodes were less stable. In addition, most receiving sets had vacuum tubes for amplification that could easily have the thermionic diodes included in the tube (for example the
1310:, the concept of PIV is not applicable. A Zener diode contains a heavily doped p–n junction allowing electrons to tunnel from the valence band of the p-type material to the conduction band of the n-type material, such that the reverse voltage is "clamped" to a known value (called the
439:
C for LEDs), so the user has a guarantee about when a certain amount of current will kick in. At higher currents, the forward voltage drop of the diode increases. For instance, a drop of 1 V to 1.5 V is typical at full rated current for silicon power diodes. (See also:
934:, around 800–1,000 °C (1,470–1,830 °F). A directly heated cathode is made of tungsten wire and is heated by a current passed through it from an external voltage source. An indirectly heated cathode is heated by infrared radiation from a nearby heater that is formed of
1832:
diodes are constructed from metal to semiconductor contact. They have a lower forward voltage drop than p–n junction diodes. Their forward voltage drop at forward currents of about 1 mA is in the range 0.15 V to 0.45 V, which makes them useful in voltage
990:
attracts the electrons from the cathode, so a current of electrons flows through the tube from cathode to plate. When the plate voltage is negative with respect to the cathode, no electrons are emitted by the plate, so no current can pass from the plate to the cathode.
1606:
These are diodes that conduct in the reverse direction when the reverse bias voltage exceeds the breakdown voltage. These are electrically very similar to Zener diodes (and are often mistakenly called Zener diodes), but break down by a different mechanism: the
1096:), it allows electrons to flow through the depletion region from the N-type side to the P-type side. The junction does not allow the flow of electrons in the opposite direction when the potential is applied in reverse, creating, in a sense, an electrical
647:
the 1960s. Today they are still used in a few high power applications where their ability to withstand transient voltages and their robustness gives them an advantage over semiconductor devices, and in musical instrument and audiophile applications.
2635:. The keyboard controller scans the rows and columns to determine which note the player has pressed. The problem with matrix circuits is that, when several notes are pressed at once, the current can flow backward through the circuit and trigger "
1623:
with the gate shorted to the source, and function like a two-terminal current-limiting analog to the voltage-limiting Zener diode. They allow a current through them to rise to a certain value, and then level off at a specific value. Also called
2178:
system was introduced in the US by EIA/JEDEC (Joint
Electron Device Engineering Council) about 1960. Most diodes have a 1-prefix designation (e.g., 1N4003). Among the most popular in this series were: 1N34A/1N270 (germanium signal),
1076:. When the n-type and p-type materials are attached together, a momentary flow of electrons occurs from the n to the p side resulting in a third region between the two where no charge carriers are present. This region is called the
2009:
conveys the general electrical function to the reader. There are alternative symbols for some types of diodes, though the differences are minor. The triangle in the symbols points to the forward direction, i.e. in the direction of
1708:
coating, or combinations of three LEDs of a different color. LEDs can also be used as low-efficiency photodiodes in signal applications. An LED may be paired with a photodiode or phototransistor in the same package, to form an
1187:
1895:
and the current is interrupted or reversed, the reverse conduction will cease very abruptly (as in a step waveform). SRDs can, therefore, provide very fast voltage transitions by the very sudden disappearance of the charge
1029:
during manufacture by momentarily passing a relatively large current through the device. Point contact diodes generally exhibit lower capacitance, higher forward resistance and greater reverse leakage than junction diodes.
513:
impurities introduced into the materials during manufacture. These techniques are used to create special-purpose diodes that perform many different functions. For example, to electronically tune radio and TV receivers
1535:(i.e., the series resistance) and the diode is said to be in the storage-phase. In certain real-world cases it is important to consider the losses that are incurred by this non-ideal diode effect. However, when the
3812:
1516:
Following the end of forwarding conduction in a p–n type diode, a reverse current can flow for a short time. The device does not attain its blocking capability until the mobile charge in the junction is depleted.
1221:
If an external voltage is placed across the diode with the same polarity as the built-in potential, the depletion zone continues to act as an insulator, preventing any significant electric current flow (unless
1492:
1864:
Super barrier diodes are rectifier diodes that incorporate the low forward voltage drop of the
Schottky diode with the surge-handling capability and low reverse leakage current of a normal p–n junction
49:
Close-up view of a silicon diode. The anode is on the right side; the cathode is on the left side (where it is marked with a black band). The square silicon crystal can be seen between the two leads.
1753:. Peltier heat pumps may be made from semiconductors, though they do not have any rectifying junctions, they use the differing behavior of charge carriers in N and P-type semiconductor to move heat.
2624:
a heavy-duty split-charge diode is used to prevent the higher-charge battery (typically the engine battery) from discharging through the lower-charge battery when the alternator is not running.
1302:
occurs that causes a large increase in current (i.e., a large number of electrons and holes are created at, and move away from the p–n junction) that usually damages the device permanently. The
1080:
because there are no charge carriers (neither electrons nor holes) in it. The diode's terminals are attached to the n-type and p-type regions. The boundary between these two regions, called a
1916:
characteristics. These devices are specially designed for low-voltage stabilization applications requiring a guaranteed voltage over a wide current range and highly stable over temperature.
423:, since a consequence of the steepness of the exponential is that a diode's voltage drop will not significantly exceed the threshold voltage under normal forward bias operating conditions.
1797:, layer, forming a p-type/intrinsic/n-type structure. They are used as radio frequency switches and attenuators. They are also used as large-volume, ionizing-radiation detectors and as
1648:
These are point-contact diodes. The 1N21 series and others are used in mixer and detector applications in radar and microwave receivers. The 1N34A is another example of a crystal diode.
1020:
technology, and are now generally used in the 3 to 30 gigahertz range. Point-contact diodes use a small diameter metal wire in contact with a semiconductor crystal, and are of either
2132:
3584:
3301:
Wu, Heng; Wang, Yaojia; Xu, Yuanfeng; Sivakumar, Pranava K.; Pasco, Chris; Filippozzi, Ulderico; Parkin, Stuart S. P.; Zeng, Yu-Jia; McQueen, Tyrel; Ali, Mazhar N. (April 2022).
601:), and vacuum-tube rectifiers and gas-filled rectifiers were capable of handling some high-voltage/high-current rectification tasks better than the semiconductor diodes (such as
1420:
At forward voltages less than the saturation voltage, the voltage versus current characteristic curve of most diodes is not a straight line. The current can be approximated by
3785:
3748:
2927:
485:
A diode's high resistance to current flowing in the reverse direction suddenly drops to a low resistance when the reverse voltage across the diode reaches a value called the
4107:
3809:
1929:. Their p–n junctions have a much larger cross-sectional area than those of a normal diode, allowing them to conduct large currents to ground without sustaining damage.
3952:
4147:
4256:
2075:
1700:
may be produced. The first LEDs were red and yellow, and higher-frequency diodes have been developed over time. All LEDs produce incoherent, narrow-spectrum light;
1502:
small compared to the second order term. The desired current component is approximately proportional to the square of the input voltage, so the response is called
2639:" that cause "ghost" notes to play. To avoid triggering unwanted notes, most keyboard matrix circuits have diodes soldered with the switch under each key of the
986:
The alternating voltage to be rectified is applied between the cathode and the plate. When the plate voltage is positive with respect to the cathode, the plate
2343:
the AM radio frequency signal, leaving only the positive peaks of the carrier wave. The audio is then extracted from the rectified carrier wave using a simple
4118:
2615:
Diodes will prevent currents in unintended directions. To supply power to an electrical circuit during a power failure, the circuit can draw current from a
1781:. Multiple photodiodes may be packaged in a single device, either as a linear array or as a two-dimensional array. These arrays should not be confused with
1769:), so they are packaged in materials that allow light to pass, and are usually PIN (the kind of diode most sensitive to light). A photodiode can be used in
1765:
generation. This is typically an undesired effect, so most semiconductors are packaged in light-blocking material. Photodiodes are intended to sense light (
3412:
4013:
2571:
for high-energy particles are used in large numbers. Because of energy loss fluctuations, accurate measurement of the energy deposited is of less use.
5130:
2603:
temperature coefficient, typically −2 mV/°C for silicon diodes. The temperature coefficient is approximately constant for temperatures above about 20
3979:"Transistor Museum Construction Projects Point Contact Germanium Western Electric Vintage Historic Semiconductors Photos Alloy Junction Oral History"
679:
researchers at Bell
Telephone Laboratories recognized the potential of the crystal detector for application in microwave technology. Researchers at
1590:), much larger than the later silicon diode of the same current ratings would require. The vast majority of all diodes are the p–n diodes found in
469:
Since a diode's forward-voltage drop varies only a little with the current, and is more so a function of temperature, this effect can be used as a
4771:
1745:
This term is used both for conventional p–n diodes used to monitor temperature because of their varying forward voltage with temperature, and for
4096:
3646:
1539:
of the current is not so severe (e.g. Line frequency) the effect can be safely ignored. For most applications, the effect is also negligible for
578:
diode. The filament itself may be the cathode, or more commonly (as shown here) used to heat a separate metal tube which serves as the cathode.
458:" around this threshold when viewed on a linear scale, the knee is an illusion that depends on the scale of y-axis representing current. In a
179:. The discovery of asymmetric electrical conduction across the contact between a crystalline mineral and a metal was made by German physicist
2836:
150:
4181:
2245:
4688:
3735:
3848:
3504:
4469:
4249:
3581:
3268:
2081:
1919:
3706:
3601:
Elhami
Khorasani, A.; Griswold, M.; Alford, T. L. (2014). "Gate-Controlled Reverse Recovery for Characterization of LDMOS Body Diode".
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1405:
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451:
315:
172:
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2713:
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There are a number of common, standard and manufacturer-driven numbering and coding schemes for diodes; the two most common being the
4452:
4348:
3837:
3198:
2931:
2890:
2863:
1423:
3174:
2906:
1119:
3546:
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In microwave and millimeter wave technology, beginning in the 1930s, researchers improved and miniaturized the crystal detector.
4640:
4439:
1982:
These can be made to conduct in reverse bias (backward), and are correctly termed reverse breakdown diodes. This effect called
812:
334:, above which there is significant current and below which there is almost no current, which depends on a diode's composition:
4129:
3286:
5304:
4242:
2153:
4158:
3956:
1891:
relates to the form of the reverse recovery characteristic of these devices. After a forward current has been passing in an
1558:
3465:
2200:
2184:
1971:
609:
4205:
4671:
4423:
2620:
590:(semiconductor) diodes were developed separately, at approximately the same time, in the early 1900s, as radio receiver
406:
454:
is really more gradual than this simple on–off action. Although an exponential function may appear to have a definite "
5294:
4475:
4412:
3251:
1520:
The effect can be significant when switching large currents very quickly. A certain amount of "reverse recovery time"
1390:
1150:
between differing semiconductors. When a p–n junction is first created, conduction-band (mobile) electrons from the N-
466:
for current and a linear scale for voltage), the diode's exponential curve instead appears more like a straight line.
287:
2515:
2335:
article. In summary, an AM signal consists of alternating positive and negative peaks of a radio carrier wave, whose
1746:
3483:
5135:
4682:
2770:
2417:
1847:
1806:
1656:
These are similar to tunnel diodes in that they are made of materials such as GaAs or InP that exhibit a region of
790:
671:
4192:
1527:(on the order of tens of nanoseconds to a few microseconds) may be required to remove the reverse recovery charge
4889:
4603:
4446:
4331:
1587:
587:
270:
The most common function of a diode is to allow an electric current to pass in one direction (called the diode's
4756:
4898:
4608:
4464:
3419:
4211:
3896:
Dowdey, J. E.; Travis, C. M. (1964). "An
Analysis of Steady-State Nuclear Radiation Damage of Tunnel Diodes".
4021:
2061:
1841:, although their reverse leakage current is in general higher than that of other diodes. Schottky diodes are
286:. This unidirectional behavior can convert alternating current (AC) to direct current (DC), a process called
4909:
4629:
4428:
2632:
2507:
2407:
are a common example, where the diode, which rectifies the AC into DC, provides better performance than the
1926:
1495:
1409:
1376:
1349:
1164:
506:
1223:
1175:
310:
5078:
4645:
4510:
4486:
2568:
2470:
also incorporate diodes on the connection pins to prevent external voltages from damaging their sensitive
2188:
2032:
1925:
These are avalanche diodes designed specifically to protect other semiconductor devices from high-voltage
1805:, as their central layer can withstand high voltages. Furthermore, the PIN structure can be found in many
1750:
1614:
1199:
999:
510:
146:
131:
31:
2679:
This simple diode clamp will clamp the negative peaks of the incoming waveform to the common rail voltage
1546:
The reverse current ceases abruptly when the stored charge is depleted; this abrupt stop is exploited in
1320:: For a bias between breakdown and 0 V, the reverse current is very small and asymptotically approaches -
5147:
5099:
4920:
4736:
4651:
4582:
4418:
3680:
2729:
2684:
2670:
2656:
2616:
2511:
2408:
2090:
1967:
1834:
1782:
1778:
1734:
1664:
1003:
Close-up of an EFD108 germanium point-contact diode in DO7 glass package, showing the sharp metal wire (
749:
659:
4217:
3643:
2599:
term is more significant than the variation in the thermal voltage term. Most diodes therefore have a
2118:
5221:
4965:
4860:
4634:
4527:
4381:
4342:
4273:
4265:
3905:
3870:
3610:
3324:
3099:
2765:
2636:
2631:. To reduce the amount of wiring needed in electronic musical keyboards, these instruments often use
2628:
2412:
2328:
2038:
2011:
1701:
1670:
1660:. With appropriate biasing, dipole domains form and travel across the diode, allowing high frequency
1402:
1345:
1295:
1073:
1065:
962:
741:
651:
625:
538:
448:
399:
250:
176:
169:
134:
119:
3999:
3062:
2952:
2661:
Diodes can be used to limit the positive or negative excursion of a signal to a prescribed voltage.
4941:
4849:
4741:
4577:
4554:
2785:
2500:
2496:
2467:
2396:
2180:
2047:
1942:
1892:
1882:
1774:
1657:
1594:
1547:
1504:
1299:
954:
667:
614:
598:
542:
226:
107:
4223:
4061:
2583:
measuring device, since the forward voltage drop across the diode depends on temperature, as in a
885:
The symbol for an indirectly heated vacuum tube diode. From top to bottom, the element names are:
5246:
5106:
4814:
4781:
4597:
4481:
4459:
3626:
3356:
3314:
3154:
3025:
2805:
2757:
2596:
2420:
1829:
1134:. The shape of the curve is determined by the transport of charge carriers through the so-called
1085:
602:
246:
1060:
are also used. Impurities are added to it to create a region on one side that contains negative
5241:
5162:
5053:
5005:
4834:
4761:
4723:
4087:
3833:
3374:
3348:
3340:
3194:
3188:
3115:
3043:
2988:
2886:
2859:
2853:
2832:
2550:
2404:
2344:
2320:
2000:
1963:
1946:
1802:
1287:
can be approximated by four operating regions. From lower to higher bias voltages, these are:
1203:
987:
872:
486:
474:
463:
279:
254:
81:
58:
3272:
3065:
Owen W. Richardson, "Thermionic phenomena and the laws which govern them", December 12, 1929,
2982:
2880:
2826:
2800:
2298:, also known as an optical diode, that allows light to only pass in one direction. It uses a
1913:
1191:
1147:
1081:
165:
118:
into which electrons will flow when the diode is conducting. Electron flow is the reverse of
4957:
4904:
4766:
4731:
4370:
3913:
3878:
3668:
3664:
3618:
3332:
3107:
3017:
2701:
2640:
2451:
2332:
2295:
2216:
2104:
1855:
1842:
1688:
when they recombine with the majority carrier on the other side. Depending on the material,
1681:
1398:
1394:
1142:
1136:
1077:
1057:
1017:
904:
684:
663:
633:
591:
388:
188:
138:
103:
3525:
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5234:
5167:
5020:
4751:
4661:
4505:
3816:
3693:
3650:
3588:
2775:
2644:
2558:
2315:
2299:
2006:
1983:
1851:
1730:
1601:
1353:
1329:
1303:
1195:
1171:
916:
711:
629:
553:
519:
494:
455:
215:
180:
142:
3090:
Redhead, P. A. (1998-05-01). "The birth of electronics: Thermionic emission and vacuum".
4055:
3909:
3874:
3614:
3328:
3103:
2241:
GD-series germanium diodes (e.g., GD9) – this is a very old coding system
2020:
1159:
acceptor (dopant) on the P side. The region around the p–n junction becomes depleted of
505:
A semiconductor diode's current–voltage characteristic can be tailored by selecting the
5209:
4990:
4980:
4746:
4549:
2697:
2400:
2067:
1824:
1762:
1722:
1677:
1540:
1160:
1115:
1109:
1061:
715:
618:
515:
352:
299:
238:
230:
3882:
1239:
1216:
1043:
363:
5288:
5271:
5094:
5010:
4829:
4656:
4624:
3360:
3302:
2554:
2527:
2463:
2459:
2443:
1798:
1766:
1740:
1710:
1578:
1122:
rather than a p–n junction, which reduces capacitance and increases switching speed.
1069:
1049:
977:
637:
459:
242:
161:
157:
3029:
2220:
capacitance, X = multiplier, Y = rectifier and Z = voltage reference); for example:
218:, in which electrons can flow in only one direction, from the cathode the to plate.
5152:
5140:
5028:
4995:
4824:
4809:
4392:
4376:
3630:
2790:
2553:
to detect radiation. A single particle of radiation, with thousands or millions of
2212:
2161:
2138:
Typical diode packages in same alignment as diode symbol. The thin bar depicts the
2096:
1932:
1705:
808:
534:
526:
295:
234:
3978:
3213:
Pickard, G. W., "Means for receiving intelligence communicated by electric waves"
2595:
temperature coefficient (at a constant current), but usually the variation of the
2227:
BA-series silicon low-power/signal diodes (e.g., BAT18 silicon RF switching diode)
1253:
983:
The plate, not being heated, does not emit electrons; but is able to absorb them.
570:
3719:
2607:. Some graphs are given for 1N400x series, and CY7 cryogenic temperature sensor.
2474:. Specialized diodes are used to protect from over-voltages at higher power (see
1569:
Normal (p–n) diodes, which operate as described above, are usually made of doped
980:, meaning that they more readily emit electrons than would the uncoated cathode.
5194:
4936:
4885:
4791:
4776:
4559:
4521:
3568:
3446:
3395:
2580:
2535:
2492:
2487:
2471:
2384:
2352:
2331:(AM) radio broadcasts. The history of this discovery is treated in depth in the
2294:
In optics, an equivalent device for the diode but with laser light would be the
2124:
1977:
1716:
1697:
1307:
1097:
912:
907:
device consisting of a sealed, evacuated glass or metal envelope containing two
583:
575:
565:
522:
490:
283:
203:
111:
4041:
3810:
Fast
Recovery Epitaxial Diodes (FRED) Characteristics – Applications – Examples
3336:
3047:
The London, Edinburgh, and Dublin
Philosophical Magazine and Journal of Science
2751:
2237:
Other common numbering/coding systems (generally manufacturer-driven) include:
1279:. The leveling off region which occurs at larger forward currents is not shown.
1198:
decreases as voltage increases. Both p and n junctions are doped at a 1e15/cm3
632:
and former Edison employee) realized that the Edison effect could be used as a
5266:
5256:
5189:
5063:
5033:
5000:
4975:
4970:
4947:
4819:
4799:
4677:
4539:
4516:
4402:
4304:
4299:
4294:
4116:; 1st Ed; Rufus Turner; Howard Sams & Co; 128 pages; 1963; LCCN 63-13904.
3917:
2780:
2747:
2696:
The diode's exponential current–voltage relationship is exploited to evaluate
2539:
2503:
2348:
2267:
2053:
1959:
1770:
1756:
1689:
1651:
1227:
848:
793:
732:
At the time of their invention, asymmetrical conduction devices were known as
654:
discovered the "unilateral conduction" across a contact between a metal and a
530:
424:
291:
3622:
3344:
3215:
3133:
3119:
3076:
2708:
using analog voltage signals (see
Operational amplifier applications §§
2462:
that would otherwise occur. (A diode used in such an application is called a
642:
17:
5229:
5073:
5068:
5058:
4985:
4865:
4699:
4694:
4619:
4544:
3931:
3021:
2705:
2562:
2392:
2379:
2340:
2336:
2272:
2262:
1936:
1899:
1838:
1818:
1788:
1661:
1574:
1536:
1053:
1016:
Point-contact diodes were developed starting in the 1930s, out of the early
970:
908:
836:
733:
727:
680:
621:
546:
441:
222:
207:
192:
3352:
1837:
and prevention of transistor saturation. They can also be used as low loss
1084:, is where the action of the diode takes place. When a sufficiently higher
44:
2549:
and single and multiple bit errors. This effect is sometimes exploited by
2230:
BY-series silicon rectifier diodes (e.g., BY127 1250V, 1A rectifier diode)
880:
89:
5251:
5199:
5179:
5157:
5043:
5038:
4926:
4915:
4844:
4614:
3235:"Development of Silicon Crystal Rectifiers for Microwave Radar Receivers"
3234:
3092:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
2795:
2447:
2288:
1987:
1875:
1693:
1582:
1356:" appears, but no clear threshold voltage is visible on a semi-log graph.
1333:
1068:, and a region on the other side that contains positive charge carriers (
950:
935:
931:
927:. If indirect heating is employed, a heater is included in the envelope.
617:, and was granted a patent on application of the phenomenon for use in a
384:
4234:
1226:
are actively being created in the junction by, for instance, light; see
830:
5111:
5048:
4870:
4855:
4709:
4666:
4314:
2675:
2643:. The same principle is also used for the switch matrix in solid-state
2249:
2139:
2110:
1952:
1570:
1093:
938:
wire and supplied with current provided by an external voltage source.
864:
781:
777:
737:
675:
655:
435:) for a specified current and temperature (e.g. 20 mA and 25
211:
184:
115:
74:
1202:
level, leading to built-in potential of ~0.59V. Observe the different
941:
662:
was the first to use a crystal for detecting radio waves in 1894. The
153:
in one direction and high (ideally infinite) resistance in the other.
5184:
4875:
4839:
4804:
4364:
4336:
4309:
4284:
3111:
2604:
2531:
1814:
1685:
1336:
I–V (logarithmic current vs. linear voltage) graph of various diodes.
1206:
for conduction band and valence band in n and p regions (red curves).
1179:
1155:
1151:
966:
785:
773:
692:
3672:
3644:
Inclusion of Switching Loss in the Averaged Equivalent Circuit Model
2339:
or envelope is proportional to the original audio signal. The diode
2203:
system has all semiconductor diode designations starting with "1S".
3319:
3303:"The field-free Josephson diode in a van der Waals heterostructure"
2688:
signal up or down so as to place the peaks at the reference level.
1597:, which include two diodes per pin and many other internal diodes.
1186:
5261:
5172:
4931:
4704:
4359:
4354:
2546:
2543:
2455:
2278:
2174:
2157:
1726:
1557:
1328:
1252:
1185:
1089:
998:
973:
958:
940:
860:
595:
569:
309:
98:
97:
70:
3008:
Guarnieri, M. (2011). "Trailblazers in Solid-State Electronics".
2233:
BZ-series silicon Zener diodes (e.g., BZY88C4V7 4.7V Zener diode)
290:. As rectifiers, diodes can be used for such tasks as extracting
5204:
4587:
4533:
4434:
4387:
4325:
2283:
1868:
1810:
1620:
1591:
377:
4238:
2587:. From the Shockley ideal diode equation given above, it might
114:. In most diodes, a white or black painted band identifies the
1912:
refers to a special type of diodes featuring extremely stable
1487:{\displaystyle I=I_{\text{S}}e^{V_{\text{D}}/(nV_{\text{T}})}}
1130:
A semiconductor diode's behavior in a circuit is given by its
949:
The operating temperature of the cathode causes it to release
688:
415:
This voltage may loosely be referred to simply as the diode's
3849:
Protecting Low Current Loads in Harsh Electrical Environments
2005:
The symbol used to represent a particular type of diode in a
274:
direction), while blocking it in the opposite direction (the
4105:; 1st Ed; Bernard Babani; Krisson Printing; 48 pages; 1972.
4000:"Optical Isolator – an overview | ScienceDirect Topics"
2395:
are constructed from diodes, where they are used to convert
2370:
are used in radar, microwave and millimeter wave detectors.
1577:. Before the development of silicon power rectifier diodes,
4103:
38 Practical Tested Diode Circuits For the Home Constructor
3861:
Jonscher, A. K. (1961). "The physics of the tunnel diode".
3507:
Navy Electricity and Electronics Training Series, Module 11
2855:
Analog Electronics: Circuits, Systems and Signal Processing
2458:
circuits to de-energize coils rapidly without the damaging
2244:
OA-series germanium diodes (e.g., OA47) – a
1408:
of diodes in moderate forward or reverse bias. The article
1183:
there is a "built-in" potential across the depletion zone.
696:
338:
Forward threshold voltage for various semiconductor diodes
2828:
Electronic Circuits: Fundamentals and Applications, 3rd Ed
2224:
AA-series germanium low-power/signal diodes (e.g., AA119)
4057:
The Principles of Electric Wave Telegraphy and Telephony
1306:
is deliberately designed for use in that manner. In the
636:. Fleming patented the first true thermionic diode, the
4179:; 2nd Ed; Federal Telephone and Radio; 80 pages; 1953.
1352:. When plotted using a linear current scale, a smooth "
1170:
However, the width of the depletion region (called the
835:
A high power vacuum diode used in radio equipment as a
4208:; 1989; National Semiconductor (now Texas Instruments)
4127:; 2nd Ed; Sylvania Electric Products; 47 pages; 1949.
3953:"Introduction dates of common transistors and diodes?"
2510:
can be achieved by adding an active device to provide
552:
Diodes, both vacuum and semiconductor, can be used as
1426:
3044:"On a relation between heat and static electricity,"
2327:
The first use for the diode was the demodulation of
5220:
5120:
5087:
5019:
4956:
4884:
4790:
4722:
4568:
4496:
4401:
4283:
4272:
4086:; 1st Ed; R.N. Soar; Babani Press; 62 pages; 1977;
871:
854:
844:
493:) or to protect circuits from high voltage surges (
322:A diode's behavior is often simplified as having a
80:
64:
54:
3558:
3556:
2885:. London: Cambridge University Press. p. 44.
1486:
3851:. Digikey.com (2009-05-27). Retrieved 2013-12-19.
3775:. Digikey.com (2009-05-27). Retrieved 2013-12-19.
3738:. Digikey.com (2009-05-27). Retrieved 2013-12-19.
3709:. Digikey.com (2009-05-27). Retrieved 2013-12-19.
3193:. US: John Wiley and Sons. pp. 94, 291–308.
2475:
1729:can be formed. Laser diodes are commonly used in
811:, to differentiate them from diodes intended for
168:connected to two electrical terminals. It has an
102:Various semiconductor diodes. Left: A four-diode
2852:Crecraft, Filip Mincic; Stephen Gergely (2002).
4156:; 1st Ed; Bob Dale; Motorola; 213 pages; 1966.
3505:"U. S. Navy Center for Surface Combat Systems,
3229:
3227:
3225:
2907:"Physical Explanation – General Semiconductors"
1684:, charge carriers that cross the junction emit
1260:of a p–n junction diode showing three regions:
160:diode, the most commonly used type today, is a
3520:
3518:
3155:"Ueber die Stromleitung durch Schwefelmetalle"
2928:"The Constituents of Semiconductor Components"
2542:and other sources of ionizing radiation cause
1725:formed by polishing the parallel end faces, a
1550:for the generation of extremely short pulses.
640:, in Britain on 16 November 1904 (followed by
4250:
3377:The Telegraphic Journal and Electrical Review
2987:. Butterworth-Heinemann. pp. 8.14–8.22.
2984:Electronics Engineer's Reference Book, 4th Ed
1721:When an LED-like structure is contained in a
1048:A p–n junction diode is made of a crystal of
470:
407:Light-emitting diode physics § Materials
257:and status indicators on electronic devices.
187:, but other semiconducting materials such as
8:
4167:; F.G. Spreadbury; D. Van Nostrand Co; 1962.
3291:, Sylvania Electric Products Co., 1949, p. 9
3157:(On current conduction in metal sulphides),
2433:protection, and reverse battery protection.
1846:high-speed circuitry and RF devices such as
823:
699:intensively developed point-contact diodes (
37:
3582:Diode reverse recovery in a boost converter
489:. This effect is used to regulate voltage (
4280:
4257:
4243:
4235:
4190:; 1st Ed; Sarkes Tarzian; 80 pages; 1950.
4173:; International Rectifier; 96 pages; 1960.
3955:. EDAboard.com. 2010-06-10. Archived from
3241:, Vol. 24, No. 1, January 1947. pp. 1 - 30
1761:All semiconductors are subject to optical
666:was developed into a practical device for
566:Vacuum tube § History and development
541:). Tunnel, Gunn and IMPATT diodes exhibit
3547:"Microsemi Corporation Schottky web page"
3318:
2359:
1941:These have a region of operation showing
1643:
1473:
1458:
1452:
1447:
1437:
1425:
1294:: At very large reverse bias, beyond the
1178:recombination made, a positively charged
945:A vacuum tube containing two power diodes
4214:; 1985; Fairchild (now ON Semiconductor)
2976:
2974:
2972:
2674:
2388:Schematic of basic AC-to-DC power supply
2383:
2314:
1007:) that forms the semiconductor junction.
336:
183:in 1874. Today, most diodes are made of
4226:; 1965; Motorola (now ON Semiconductor)
3379:, Vol. XIX, September 10, 1886, p. 252"
3375:"W. H. Preece, "Multiplex Telegraphy",
2817:
2526:In addition to light, mentioned above,
2424:to convert AC into higher DC voltages.
2016:
1793:A PIN diode has a central un-doped, or
1272:biased. The exponential's "knee" is at
930:In operation, the cathode is heated to
442:Rectifier § Rectifier voltage drop
164:piece of semiconductor material with a
3689:
3678:
2879:Horowitz, Paul; Winfield Hill (1989).
2858:. Butterworth-Heinemann. p. 110.
1704:are actually a blue LED with a yellow
1174:) cannot grow without limit. For each
822:
175:. Semiconductor diodes were the first
36:
4145:; On Semiconductor; 270 pages; 2001.
4014:"1N400x Diode Family Forward Voltage"
3460:
3458:
3456:
3441:
3439:
3407:
3405:
3390:
3388:
3074:Edison, Thomas A. "Electrical Meter"
2692:Computing exponentials and logarithms
2415:. Similarly, diodes are also used in
2275:or silicon controlled rectifier (SCR)
2172:The standardized 1N-series numbering
1958:These are used as voltage-controlled
427:typically quote a typical or maximum
221:Among many uses, diodes are found in
7:
4689:Three-dimensional integrated circuit
4220:; 1982; SGS (now STMicroelectronics)
3898:IEEE Transactions on Nuclear Science
3563:Giacoletto, Lawrence Joseph (1977).
2367:
1644:Crystal rectifiers or crystal diodes
1194:diode in low forward bias mode. The
1114:Another type of junction diode, the
771:however was already in use, as were
605:) that were available at that time.
4470:Programmable unijunction transistor
4060:. London: Longmans, Green. p.
3830:Modern Semiconductor Device Physics
2347:and fed into an audio amplifier or
2082:Transient-voltage-suppression diode
1920:Transient voltage suppression diode
807:usually applies to diodes used for
249:. A common variant of a diode is a
4371:Multi-gate field-effect transistor
3863:British Journal of Applied Physics
3042:Guthrie, Frederick (October 1873)
2724:Diodes are usually referred to as
2585:silicon bandgap temperature sensor
2351:, which generates sound waves via
2187:(silicon 1A power rectifier), and
1751:thermoelectric heating and cooling
1406:current–voltage (I–V) relationship
953:into the vacuum, a process called
25:
4349:Insulated-gate bipolar transistor
3239:The Bell System Technical Journal
447:However, a semiconductor diode's
27:Two-terminal electronic component
4593:Heterostructure barrier varactor
4320:Chemical field-effect transistor
4188:S.T. Selenium Rectifier Handbook
4177:F.T. Selenium Rectifier Handbook
3486:Asymmetrically Conductive Device
3447:"Massachusetts Bay Technologies"
2750:
2131:
2117:
2103:
2089:
2074:
2060:
2046:
2031:
2019:
1658:negative differential resistance
1366:in series with a fixed resistor.
1298:(PIV), a process called reverse
879:
829:
177:semiconductor electronic devices
88:
43:
4641:Mixed-signal integrated circuit
4143:Rectifier Applications Handbook
3665:"Tunnel Diode Circuit Analysis"
3565:Electronics Designers' Handbook
1344:: The current–voltage curve is
867:, heater (if indirectly heated)
3819:. (PDF). Retrieved 2013-12-19.
3470:, New York: McGraw-Hill, 1948"
3466:"H. C. Torrey, C. A. Whitmer,
3269:"Sylvania 1949 data book page"
2882:The Art of Electronics, 2nd Ed
2191:(silicon 3A power rectifier).
1962:. These are important in PLL (
1801:. PIN diodes are also used in
1479:
1463:
1285:current–voltage characteristic
1258:Current–voltage characteristic
1132:current–voltage characteristic
1126:Current–voltage characteristic
1088:is applied to the P side (the
452:current–voltage characteristic
173:current–voltage characteristic
1:
4054:John Ambrose Fleming (1919).
4042:Cryogenic Temperature Sensors
3653:. ECEN5797. ecee.colorado.edu
3591:. ECEN5817. ecee.colorado.edu
3413:"Advanced Semiconductor, Inc"
3159:Annalen der Physik und Chemie
2732:. Sometimes the abbreviation
2530:diodes are sensitive to more
2201:JIS semiconductor designation
1972:voltage-controlled oscillator
1383:Shockley ideal diode equation
1240:p–n diode § Forward bias
1217:p–n diode § Reverse bias
957:. The cathode is coated with
405:1.6 V (red) to 4 V (violet).
149:). It has low (ideally zero)
4672:Silicon controlled rectifier
4534:Organic light-emitting diode
4424:Diffused junction transistor
4125:40 Uses for Germanium Diodes
3788:. 2010-05-25. Archived from
3751:. 2010-05-25. Archived from
3736:Classification of components
3663:Roddick, R.G. (1962-10-01).
3603:IEEE Electron Device Letters
3288:40 Uses for Germanium Diodes
2930:. 2010-05-25. Archived from
2629:electronic musical keyboards
2621:uninterruptible power supply
2522:Ionizing radiation detectors
2148:Numbering and coding schemes
1554:Types of semiconductor diode
1120:metal–semiconductor junction
767:), meaning 'path'. The word
4476:Static induction transistor
4413:Bipolar junction transistor
4365:MOS field-effect transistor
4337:Fin field-effect transistor
3883:10.1088/0508-3443/12/12/304
3526:"Skyworks Solutions, Inc.,
1807:power semiconductor devices
1733:devices and for high speed
1634:diode-connected transistors
1391:bipolar junction transistor
714:effect without an external
628:(scientific adviser to the
473:or as a somewhat imprecise
266:Unidirectional current flow
241:, and can even be used for
5321:
4683:Static induction thyristor
4154:Silicon Rectifier Handbook
3337:10.1038/s41586-022-04504-8
3252:"Germanium Crystal Diodes"
2771:Diode-connected transistor
2668:
2654:
2597:reverse saturation current
2485:
2428:Reverse-voltage protection
2377:
2160:standard and the European
1998:
1990:, a registered trademark).
1848:switched-mode power supply
1565:of several types of diodes
1374:
1237:
1214:
1154:region diffuse into the P-
1107:
1092:) than to the N side (the
1041:
725:
672:Greenleaf Whittier Pickard
650:In 1874, German scientist
563:
346:Forward threshold voltage
29:
4852:(Hexode, Heptode, Octode)
4604:Hybrid integrated circuit
4447:Light-emitting transistor
3981:. Semiconductormuseum.com
3918:10.1109/TNS2.1964.4315475
3528:Mixer and Detector Diodes
3233:Scaff, J. H., Ohl, R. S.
3187:Sarkar, Tapan K. (2006).
2831:. Routledge. p. 81.
2579:A diode can be used as a
1676:In a diode formed from a
1638:current-regulating diodes
1395:William Bradford Shockley
878:
828:
537:), and to produce light (
324:forward threshold voltage
87:
42:
4899:Backward-wave oscillator
4609:Light emitting capacitor
4465:Point-contact transistor
4435:Junction Gate FET (JFET)
4165:Electronic Rectification
4078:Historical circuit books
3786:"Physics and Technology"
3749:"Component Construction"
3707:Current regulator diodes
3623:10.1109/LED.2014.2353301
3488:, U.S. patent 2,704,818"
3153:Braun, Ferdinand (1874)
3134:"Road to the Transistor"
3080:Issue date: Oct 21, 1884
2957:Adafruit Learning System
2633:keyboard matrix circuits
2627:Diodes are also used in
2575:Temperature measurements
1904:forward reference diodes
919:. The cathode is either
903:A thermionic diode is a
624:. About 20 years later,
549:and switching circuits.
110:. On the far right is a
4910:Crossed-field amplifier
4429:Field-effect transistor
4114:Diode Circuits Handbook
4018:cliftonlaboratories.com
3258:, February 1946, p. 118
3219:Issued: August 30, 1906
3022:10.1109/MIE.2011.943016
2591:that the voltage has a
2569:Semiconductor detectors
2508:Functional completeness
2437:Over-voltage protection
2302:as the main component.
1680:semiconductor, such as
1630:constant-current diodes
1615:Constant-current diodes
1512:Reverse-recovery effect
1496:Shockley diode equation
1410:Shockley diode equation
1377:Shockley diode equation
1371:Shockley diode equation
1350:Shockley diode equation
1163:and thus behaves as an
1064:(electrons), called an
1052:, usually silicon, but
856:Pin configuration
507:semiconductor materials
66:Pin configuration
5079:Voltage-regulator tube
4646:MOS integrated circuit
4511:Constant-current diode
4487:Unijunction transistor
4224:Semiconductor Databook
4137:Historical periodicals
4084:50 Simple LED Circuits
3832:, Wiley Interscience,
3773:Component Construction
3688:Cite journal requires
3509:, 2012, pp. 2-81–2-83"
2981:Turner, L. W. (2015).
2680:
2516:diode–transistor logic
2399:(AC) electricity into
2389:
2324:
1874:As a dopant, gold (or
1783:charge-coupled devices
1779:optical communications
1566:
1563:Current–voltage curves
1488:
1337:
1280:
1207:
1008:
946:
759:), meaning 'two', and
579:
319:
123:
32:Diode (disambiguation)
5305:Semiconductor devices
5148:Electrolytic detector
4921:Inductive output tube
4737:Low-dropout regulator
4652:Organic semiconductor
4583:Printed circuit board
4419:Darlington transistor
4266:Electronic components
3010:IEEE Ind. Electron. M
2825:Tooley, Mike (2013).
2678:
2671:Clamper (electronics)
2657:Clipper (electronics)
2565:to electron showers.
2387:
2318:
1968:frequency-locked loop
1835:clamping applications
1735:optical communication
1692:(or colors) from the
1671:Light-emitting diodes
1561:
1489:
1416:Small-signal behavior
1332:
1256:
1189:
1002:
963:alkaline earth metals
944:
712:superconducting diode
660:Jagadish Chandra Bose
573:
564:Further information:
554:shot-noise generators
545:, which is useful in
539:light-emitting diodes
409:has a complete list.
400:Light-emitting diodes
316:current–voltage curve
313:
101:
4966:Beam deflection tube
4635:Metal-oxide varistor
4528:Light-emitting diode
4382:Thin-film transistor
4343:Floating-gate MOSFET
4200:Historical databooks
4171:Zener Diode Handbook
3177:. chem.ch.huji.ac.il
3175:Karl Ferdinand Braun
2781:Fast/ultrafast diode
2766:Active rectification
2493:Diode–resistor logic
2360:Point contact diodes
2321:envelope demodulator
2039:Light-emitting diode
2012:conventional current
1883:step recovery diodes
1861:Super barrier diodes
1548:step recovery diodes
1494:as explained in the
1424:
1364:Shockley ideal diode
1348:, approximating the
1296:peak inverse voltage
1086:electrical potential
1074:p-type semiconductor
1066:n-type semiconductor
1012:Point-contact diodes
995:Semiconductor diodes
799:Although all diodes
742:William Henry Eccles
736:. In 1919, the year
652:Karl Ferdinand Braun
626:John Ambrose Fleming
417:forward voltage drop
251:light-emitting diode
135:electronic component
120:conventional current
30:For other uses, see
4942:Traveling-wave tube
4742:Switching regulator
4578:Printed electronics
4555:Step recovery diode
4332:Depletion-load NMOS
3959:on October 11, 2007
3910:1964ITNS...11...55D
3875:1961BJAP...12..654J
3615:2014IEDL...35.1079E
3329:2022Natur.604..653W
3216:U.S. patent 836,531
3190:History of wireless
3104:1998JVSTA..16.1394R
3077:U.S. patent 307,030
3063:1928 Nobel Lecture:
2786:Flame rectification
2468:integrated circuits
2421:voltage multipliers
2397:alternating current
2329:amplitude modulated
1943:negative resistance
1619:These are actually
1595:integrated circuits
1224:electron–hole pairs
1146:that exists at the
1118:, is formed from a
976:. These have a low
955:thermionic emission
825:
710:In 2022, the first
668:wireless telegraphy
658:. Indian scientist
643:U.S. patent 803,684
603:selenium rectifiers
599:double diode triode
543:negative resistance
339:
318:of 4 common diodes.
253:, which is used as
247:temperature sensors
227:alternating current
108:1N4148 signal diode
39:
5295:1904 introductions
5247:Crystal oscillator
5107:Variable capacitor
4782:Switched capacitor
4724:Voltage regulators
4598:Integrated circuit
4482:Tetrode transistor
4460:Pentode transistor
4453:Organic LET (OLET)
4440:Organic FET (OFET)
3828:Sze, S. M. (1998)
3815:2009-03-26 at the
3649:2011-10-07 at the
3587:2011-10-07 at the
3571:. pp. 24–138.
3468:Crystal Rectifiers
2806:Small-signal model
2758:Electronics portal
2714:Logarithmic output
2710:Exponential output
2681:
2551:particle detectors
2390:
2325:
2311:Radio demodulation
2215:coding system for
2183:(silicon signal),
1955:or varactor diodes
1747:Peltier heat pumps
1586:the diode's metal
1567:
1484:
1412:provides details.
1338:
1281:
1208:
1204:quasi Fermi levels
1176:electron–hole pair
1038:p–n junction diode
1009:
947:
819:Vacuum tube diodes
701:crystal rectifiers
580:
471:temperature sensor
337:
320:
124:
106:. Next to it is a
5282:
5281:
5242:Ceramic resonator
5054:Mercury-arc valve
5006:Video camera tube
4958:Cathode-ray tubes
4718:
4717:
4326:Complementary MOS
4218:Discrete Databook
4212:Discrete Databook
4206:Discrete Databook
4195:
4184:
4161:
4150:
4132:
4121:
4110:
4099:
3313:(7907): 653–656.
3250:Cornelius, E. C.
2838:978-1-136-40731-4
2738:crystal rectifier
2403:(DC). Automotive
2217:active components
2001:Electronic symbol
1964:phase-locked loop
1947:quantum tunneling
1803:power electronics
1476:
1455:
1440:
1389:(named after the
1249:Operating regions
988:electrostatically
921:indirectly heated
901:
900:
873:Electronic symbol
674:, who invented a
610:Frederick Guthrie
487:breakdown voltage
481:Reverse breakdown
475:voltage reference
464:logarithmic scale
413:
412:
357:0.15 V to 0.45 V
306:Threshold voltage
280:hydraulic analogy
255:electric lighting
96:
95:
82:Electronic symbol
16:(Redirected from
5312:
5136:electrical power
5021:Gas-filled tubes
4905:Cavity magnetron
4732:Linear regulator
4281:
4259:
4252:
4245:
4236:
4191:
4180:
4157:
4146:
4128:
4117:
4106:
4095:
4066:
4065:
4051:
4045:
4039:
4033:
4032:
4030:
4029:
4020:. Archived from
4010:
4004:
4003:
3996:
3990:
3989:
3987:
3986:
3974:
3968:
3967:
3965:
3964:
3949:
3943:
3942:
3940:
3939:
3928:
3922:
3921:
3893:
3887:
3886:
3858:
3852:
3846:
3840:
3826:
3820:
3807:
3801:
3800:
3798:
3797:
3782:
3776:
3770:
3764:
3763:
3761:
3760:
3745:
3739:
3733:
3727:
3726:
3724:
3720:"NTE data sheet"
3716:
3710:
3704:
3698:
3697:
3691:
3686:
3684:
3676:
3660:
3654:
3641:
3635:
3634:
3598:
3592:
3579:
3573:
3572:
3560:
3551:
3550:
3543:
3537:
3536:
3534:
3522:
3513:
3512:
3501:
3495:
3494:
3492:
3480:
3474:
3473:
3462:
3451:
3450:
3443:
3434:
3433:
3431:
3430:
3424:
3418:. Archived from
3417:
3409:
3400:
3399:
3392:
3383:
3382:
3371:
3365:
3364:
3322:
3298:
3292:
3283:
3277:
3276:
3271:. Archived from
3265:
3259:
3248:
3242:
3231:
3220:
3218:
3211:
3205:
3204:
3184:
3178:
3172:
3166:
3165: : 556–563.
3151:
3145:
3144:
3142:
3141:
3130:
3124:
3123:
3112:10.1116/1.581157
3098:(3): 1394–1401.
3087:
3081:
3079:
3072:
3066:
3060:
3054:
3040:
3034:
3033:
3005:
2999:
2998:
2978:
2967:
2966:
2964:
2963:
2953:"All About LEDs"
2949:
2943:
2942:
2940:
2939:
2924:
2918:
2917:
2915:
2914:
2903:
2897:
2896:
2876:
2870:
2869:
2849:
2843:
2842:
2822:
2760:
2755:
2754:
2702:inverse function
2651:Waveform clipper
2645:pinball machines
2641:musical keyboard
2611:Current steering
2452:motor controller
2418:Cockcroft–Walton
2374:Power conversion
2333:crystal detector
2296:optical isolator
2135:
2121:
2107:
2093:
2078:
2064:
2050:
2035:
2023:
1843:majority carrier
1682:gallium arsenide
1609:avalanche effect
1602:Avalanche diodes
1530:
1523:
1508:in this region.
1493:
1491:
1490:
1485:
1483:
1482:
1478:
1477:
1474:
1462:
1457:
1456:
1453:
1442:
1441:
1438:
1143:depletion region
1078:depletion region
1058:gallium arsenide
1024:contact type or
1018:crystal detector
905:thermionic-valve
883:
857:
833:
826:
824:Thermionic diode
744:coined the term
685:Western Electric
664:crystal detector
645:
495:avalanche diodes
368:0.25 V to 0.3 V
340:
278:direction). Its
200:thermionic diode
189:gallium arsenide
143:in one direction
104:bridge rectifier
92:
67:
47:
40:
21:
5320:
5319:
5315:
5314:
5313:
5311:
5310:
5309:
5285:
5284:
5283:
5278:
5216:
5131:audio and video
5116:
5083:
5015:
4952:
4880:
4861:Photomultiplier
4786:
4714:
4662:Quantum circuit
4570:
4564:
4506:Avalanche diode
4492:
4404:
4397:
4286:
4275:
4268:
4263:
4233:
4075:
4073:Further reading
4070:
4069:
4053:
4052:
4048:
4040:
4036:
4027:
4025:
4012:
4011:
4007:
3998:
3997:
3993:
3984:
3982:
3976:
3975:
3971:
3962:
3960:
3951:
3950:
3946:
3937:
3935:
3930:
3929:
3925:
3895:
3894:
3890:
3860:
3859:
3855:
3847:
3843:
3827:
3823:
3817:Wayback Machine
3808:
3804:
3795:
3793:
3784:
3783:
3779:
3771:
3767:
3758:
3756:
3747:
3746:
3742:
3734:
3730:
3722:
3718:
3717:
3713:
3705:
3701:
3687:
3677:
3673:10.2172/4715062
3662:
3661:
3657:
3651:Wayback Machine
3642:
3638:
3600:
3599:
3595:
3589:Wayback Machine
3580:
3576:
3562:
3561:
3554:
3545:
3544:
3540:
3532:
3524:
3523:
3516:
3503:
3502:
3498:
3490:
3482:
3481:
3477:
3464:
3463:
3454:
3445:
3444:
3437:
3428:
3426:
3422:
3415:
3411:
3410:
3403:
3394:
3393:
3386:
3373:
3372:
3368:
3300:
3299:
3295:
3284:
3280:
3275:on 25 May 2018.
3267:
3266:
3262:
3249:
3245:
3232:
3223:
3214:
3212:
3208:
3201:
3186:
3185:
3181:
3173:
3169:
3152:
3148:
3139:
3137:
3136:. Jmargolin.com
3132:
3131:
3127:
3089:
3088:
3084:
3075:
3073:
3069:
3061:
3057:
3041:
3037:
3007:
3006:
3002:
2995:
2980:
2979:
2970:
2961:
2959:
2951:
2950:
2946:
2937:
2935:
2926:
2925:
2921:
2912:
2910:
2905:
2904:
2900:
2893:
2878:
2877:
2873:
2866:
2851:
2850:
2846:
2839:
2824:
2823:
2819:
2814:
2776:Diode modelling
2756:
2749:
2746:
2722:
2694:
2673:
2667:
2659:
2653:
2613:
2577:
2559:liquid nitrogen
2524:
2490:
2484:
2439:
2430:
2382:
2376:
2368:Schottky diodes
2313:
2308:
2300:Faraday rotator
2259:
2257:Related devices
2246:coding sequence
2209:
2197:
2170:
2150:
2143:
2136:
2127:
2122:
2113:
2108:
2099:
2094:
2085:
2079:
2070:
2065:
2056:
2051:
2042:
2036:
2027:
2024:
2007:circuit diagram
2003:
1997:
1995:Graphic symbols
1984:Zener breakdown
1914:forward voltage
1825:Schottky diodes
1731:optical storage
1723:resonant cavity
1678:direct band-gap
1556:
1541:Schottky diodes
1533:
1528:
1526:
1521:
1514:
1469:
1448:
1443:
1433:
1422:
1421:
1418:
1379:
1373:
1326:
1304:avalanche diode
1278:
1251:
1242:
1236:
1219:
1213:
1196:depletion width
1172:depletion width
1161:charge carriers
1137:depletion layer
1128:
1112:
1106:
1062:charge carriers
1046:
1040:
1035:
1033:Junction diodes
1014:
997:
925:directly heated
884:
855:
840:
821:
740:were invented,
730:
724:
641:
630:Marconi Company
574:Structure of a
568:
562:
520:radio-frequency
518:), to generate
516:varactor diodes
503:
501:Other functions
483:
434:
429:forward voltage
328:turn-on voltage
308:
300:radio receivers
268:
263:
239:radio receivers
195:are also used.
181:Ferdinand Braun
65:
50:
35:
28:
23:
22:
15:
12:
11:
5:
5318:
5316:
5308:
5307:
5302:
5297:
5287:
5286:
5280:
5279:
5277:
5276:
5275:
5274:
5269:
5259:
5254:
5249:
5244:
5239:
5238:
5237:
5226:
5224:
5218:
5217:
5215:
5214:
5213:
5212:
5210:Wollaston wire
5202:
5197:
5192:
5187:
5182:
5177:
5176:
5175:
5170:
5160:
5155:
5150:
5145:
5144:
5143:
5138:
5133:
5124:
5122:
5118:
5117:
5115:
5114:
5109:
5104:
5103:
5102:
5091:
5089:
5085:
5084:
5082:
5081:
5076:
5071:
5066:
5061:
5056:
5051:
5046:
5041:
5036:
5031:
5025:
5023:
5017:
5016:
5014:
5013:
5008:
5003:
4998:
4993:
4991:Selectron tube
4988:
4983:
4981:Magic eye tube
4978:
4973:
4968:
4962:
4960:
4954:
4953:
4951:
4950:
4945:
4939:
4934:
4929:
4924:
4918:
4913:
4907:
4902:
4895:
4893:
4882:
4881:
4879:
4878:
4873:
4868:
4863:
4858:
4853:
4847:
4842:
4837:
4832:
4827:
4822:
4817:
4812:
4807:
4802:
4796:
4794:
4788:
4787:
4785:
4784:
4779:
4774:
4769:
4764:
4759:
4754:
4749:
4744:
4739:
4734:
4728:
4726:
4720:
4719:
4716:
4715:
4713:
4712:
4707:
4702:
4697:
4692:
4686:
4680:
4675:
4669:
4664:
4659:
4654:
4649:
4643:
4638:
4632:
4627:
4622:
4617:
4612:
4606:
4601:
4595:
4590:
4585:
4580:
4574:
4572:
4566:
4565:
4563:
4562:
4557:
4552:
4550:Schottky diode
4547:
4542:
4537:
4531:
4525:
4519:
4514:
4508:
4502:
4500:
4494:
4493:
4491:
4490:
4484:
4479:
4473:
4467:
4462:
4457:
4456:
4455:
4444:
4443:
4442:
4437:
4426:
4421:
4416:
4409:
4407:
4399:
4398:
4396:
4395:
4390:
4385:
4379:
4374:
4368:
4362:
4357:
4352:
4346:
4340:
4334:
4329:
4323:
4317:
4312:
4307:
4302:
4297:
4291:
4289:
4278:
4270:
4269:
4264:
4262:
4261:
4254:
4247:
4239:
4232:
4231:External links
4229:
4228:
4227:
4221:
4215:
4209:
4202:
4201:
4197:
4196:
4185:
4174:
4168:
4162:
4151:
4139:
4138:
4134:
4133:
4122:
4111:
4100:
4092:978-0859340434
4080:
4079:
4074:
4071:
4068:
4067:
4046:
4034:
4005:
3991:
3969:
3944:
3923:
3888:
3853:
3841:
3821:
3802:
3777:
3765:
3740:
3728:
3711:
3699:
3690:|journal=
3655:
3636:
3593:
3574:
3552:
3538:
3514:
3496:
3484:"H. Q. North,
3475:
3452:
3435:
3401:
3384:
3366:
3293:
3278:
3260:
3243:
3221:
3206:
3199:
3179:
3167:
3146:
3125:
3082:
3067:
3055:
3049:, 4th series,
3035:
3000:
2994:978-1483161273
2993:
2968:
2944:
2919:
2898:
2891:
2871:
2864:
2844:
2837:
2816:
2815:
2813:
2810:
2809:
2808:
2803:
2798:
2793:
2788:
2783:
2778:
2773:
2768:
2762:
2761:
2745:
2742:
2721:
2718:
2698:exponentiation
2693:
2690:
2669:Main article:
2666:
2663:
2655:Main article:
2652:
2649:
2612:
2609:
2576:
2573:
2534:radiation. In
2523:
2520:
2514:(as done with
2486:Main article:
2483:
2480:
2460:voltage spikes
2438:
2435:
2429:
2426:
2401:direct current
2378:Main article:
2375:
2372:
2364:crystal diodes
2312:
2309:
2307:
2304:
2292:
2291:
2286:
2281:
2276:
2270:
2265:
2258:
2255:
2254:
2253:
2252:, a UK company
2242:
2235:
2234:
2231:
2228:
2225:
2208:
2205:
2196:
2193:
2169:
2166:
2149:
2146:
2145:
2144:
2137:
2130:
2128:
2123:
2116:
2114:
2109:
2102:
2100:
2095:
2088:
2086:
2080:
2073:
2071:
2068:Schottky diode
2066:
2059:
2057:
2052:
2045:
2043:
2037:
2030:
2028:
2025:
2018:
1999:Main article:
1996:
1993:
1992:
1991:
1980:
1975:
1956:
1950:
1939:
1930:
1923:
1917:
1906:
1897:
1885:
1879:
1872:
1866:
1862:
1859:
1827:
1822:
1799:photodetectors
1791:
1786:
1763:charge carrier
1759:
1754:
1743:
1741:Thermal diodes
1738:
1719:
1714:
1674:
1668:
1654:
1649:
1646:
1641:
1617:
1612:
1604:
1555:
1552:
1531:
1524:
1513:
1510:
1481:
1472:
1468:
1465:
1461:
1451:
1446:
1436:
1432:
1429:
1417:
1414:
1375:Main article:
1372:
1369:
1368:
1367:
1357:
1342:Forward biased
1339:
1324:
1318:Reverse biased
1315:
1276:
1250:
1247:
1235:
1232:
1212:
1209:
1127:
1124:
1116:Schottky diode
1110:Schottky diode
1108:Main article:
1105:
1104:Schottky diode
1102:
1042:Main article:
1039:
1036:
1034:
1031:
1026:welded contact
1013:
1010:
996:
993:
899:
898:
876:
875:
869:
868:
858:
852:
851:
846:
842:
841:
834:
820:
817:
789:, as terms of
726:Main article:
723:
720:
718:was realized.
716:magnetic field
705:crystal diodes
634:radio detector
561:
558:
502:
499:
482:
479:
432:
411:
410:
403:
396:
395:
392:
381:
380:
374:
370:
369:
366:
359:
358:
355:
348:
347:
344:
332:cut-in voltage
307:
304:
267:
264:
262:
261:Main functions
259:
231:direct current
229:(AC) power to
137:that conducts
94:
93:
85:
84:
78:
77:
68:
62:
61:
56:
52:
51:
48:
26:
24:
14:
13:
10:
9:
6:
4:
3:
2:
5317:
5306:
5303:
5301:
5298:
5296:
5293:
5292:
5290:
5273:
5272:mercury relay
5270:
5268:
5265:
5264:
5263:
5260:
5258:
5255:
5253:
5250:
5248:
5245:
5243:
5240:
5236:
5233:
5232:
5231:
5228:
5227:
5225:
5223:
5219:
5211:
5208:
5207:
5206:
5203:
5201:
5198:
5196:
5193:
5191:
5188:
5186:
5183:
5181:
5178:
5174:
5171:
5169:
5166:
5165:
5164:
5161:
5159:
5156:
5154:
5151:
5149:
5146:
5142:
5139:
5137:
5134:
5132:
5129:
5128:
5126:
5125:
5123:
5119:
5113:
5110:
5108:
5105:
5101:
5098:
5097:
5096:
5095:Potentiometer
5093:
5092:
5090:
5086:
5080:
5077:
5075:
5072:
5070:
5067:
5065:
5062:
5060:
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5042:
5040:
5037:
5035:
5032:
5030:
5027:
5026:
5024:
5022:
5018:
5012:
5011:Williams tube
5009:
5007:
5004:
5002:
4999:
4997:
4994:
4992:
4989:
4987:
4984:
4982:
4979:
4977:
4974:
4972:
4969:
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4964:
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4961:
4959:
4955:
4949:
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4943:
4940:
4938:
4935:
4933:
4930:
4928:
4925:
4922:
4919:
4917:
4914:
4911:
4908:
4906:
4903:
4900:
4897:
4896:
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4891:
4887:
4883:
4877:
4874:
4872:
4869:
4867:
4864:
4862:
4859:
4857:
4854:
4851:
4848:
4846:
4843:
4841:
4838:
4836:
4833:
4831:
4830:Fleming valve
4828:
4826:
4823:
4821:
4818:
4816:
4813:
4811:
4808:
4806:
4803:
4801:
4798:
4797:
4795:
4793:
4789:
4783:
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4778:
4775:
4773:
4770:
4768:
4765:
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4758:
4755:
4753:
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4738:
4735:
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4711:
4708:
4706:
4703:
4701:
4698:
4696:
4693:
4690:
4687:
4684:
4681:
4679:
4676:
4673:
4670:
4668:
4665:
4663:
4660:
4658:
4657:Photodetector
4655:
4653:
4650:
4647:
4644:
4642:
4639:
4636:
4633:
4631:
4628:
4626:
4625:Memtransistor
4623:
4621:
4618:
4616:
4613:
4610:
4607:
4605:
4602:
4599:
4596:
4594:
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4308:
4306:
4303:
4301:
4298:
4296:
4293:
4292:
4290:
4288:
4282:
4279:
4277:
4274:Semiconductor
4271:
4267:
4260:
4255:
4253:
4248:
4246:
4241:
4240:
4237:
4230:
4225:
4222:
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4152:
4149:
4144:
4141:
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4136:
4135:
4131:
4126:
4123:
4120:
4115:
4112:
4109:
4104:
4101:
4098:
4093:
4089:
4085:
4082:
4081:
4077:
4076:
4072:
4063:
4059:
4058:
4050:
4047:
4043:
4038:
4035:
4024:on 2013-05-24
4023:
4019:
4015:
4009:
4006:
4001:
3995:
3992:
3980:
3973:
3970:
3958:
3954:
3948:
3945:
3933:
3932:"About JEDEC"
3927:
3924:
3919:
3915:
3911:
3907:
3903:
3899:
3892:
3889:
3884:
3880:
3876:
3872:
3868:
3864:
3857:
3854:
3850:
3845:
3842:
3839:
3838:0-471-15237-4
3835:
3831:
3825:
3822:
3818:
3814:
3811:
3806:
3803:
3792:on 2016-05-16
3791:
3787:
3781:
3778:
3774:
3769:
3766:
3755:on 2016-05-16
3754:
3750:
3744:
3741:
3737:
3732:
3729:
3721:
3715:
3712:
3708:
3703:
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3659:
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3510:
3508:
3500:
3497:
3489:
3487:
3479:
3476:
3471:
3469:
3461:
3459:
3457:
3453:
3448:
3442:
3440:
3436:
3425:on 2023-05-21
3421:
3414:
3408:
3406:
3402:
3397:
3396:"SemiGen Inc"
3391:
3389:
3385:
3380:
3378:
3370:
3367:
3362:
3358:
3354:
3350:
3346:
3342:
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3326:
3321:
3316:
3312:
3308:
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3297:
3294:
3290:
3289:
3282:
3279:
3274:
3270:
3264:
3261:
3257:
3253:
3247:
3244:
3240:
3236:
3230:
3228:
3226:
3222:
3217:
3210:
3207:
3202:
3200:0-471-71814-9
3196:
3192:
3191:
3183:
3180:
3176:
3171:
3168:
3164:
3160:
3156:
3150:
3147:
3135:
3129:
3126:
3121:
3117:
3113:
3109:
3105:
3101:
3097:
3093:
3086:
3083:
3078:
3071:
3068:
3064:
3059:
3056:
3052:
3048:
3045:
3039:
3036:
3031:
3027:
3023:
3019:
3015:
3011:
3004:
3001:
2996:
2990:
2986:
2985:
2977:
2975:
2973:
2969:
2958:
2954:
2948:
2945:
2934:on 2011-07-10
2933:
2929:
2923:
2920:
2908:
2902:
2899:
2894:
2892:0-521-37095-7
2888:
2884:
2883:
2875:
2872:
2867:
2865:0-7506-5095-8
2861:
2857:
2856:
2848:
2845:
2840:
2834:
2830:
2829:
2821:
2818:
2811:
2807:
2804:
2802:
2799:
2797:
2794:
2792:
2789:
2787:
2784:
2782:
2779:
2777:
2774:
2772:
2769:
2767:
2764:
2763:
2759:
2753:
2748:
2743:
2741:
2739:
2735:
2731:
2728:for diode on
2727:
2720:Abbreviations
2719:
2717:
2715:
2711:
2707:
2703:
2699:
2691:
2689:
2686:
2685:clamp circuit
2677:
2672:
2664:
2662:
2658:
2650:
2648:
2646:
2642:
2638:
2634:
2630:
2625:
2622:
2618:
2610:
2608:
2606:
2602:
2598:
2594:
2590:
2586:
2582:
2574:
2572:
2570:
2566:
2564:
2560:
2556:
2555:electron volt
2552:
2548:
2545:
2541:
2537:
2533:
2529:
2528:semiconductor
2521:
2519:
2517:
2513:
2509:
2505:
2502:
2498:
2494:
2489:
2481:
2479:
2477:
2473:
2469:
2465:
2464:flyback diode
2461:
2457:
2453:
2449:
2445:
2444:stepper motor
2436:
2434:
2427:
2425:
2423:
2422:
2419:
2414:
2410:
2406:
2402:
2398:
2394:
2386:
2381:
2373:
2371:
2369:
2365:
2361:
2356:
2354:
2353:audio speaker
2350:
2346:
2342:
2338:
2334:
2330:
2322:
2317:
2310:
2305:
2303:
2301:
2297:
2290:
2287:
2285:
2282:
2280:
2277:
2274:
2271:
2269:
2266:
2264:
2261:
2260:
2256:
2251:
2248:developed by
2247:
2243:
2240:
2239:
2238:
2232:
2229:
2226:
2223:
2222:
2221:
2218:
2214:
2211:The European
2206:
2204:
2202:
2194:
2192:
2190:
2186:
2182:
2177:
2176:
2167:
2165:
2163:
2159:
2155:
2147:
2141:
2134:
2129:
2126:
2120:
2115:
2112:
2106:
2101:
2098:
2092:
2087:
2083:
2077:
2072:
2069:
2063:
2058:
2055:
2049:
2044:
2040:
2034:
2029:
2022:
2017:
2015:
2013:
2008:
2002:
1994:
1989:
1985:
1981:
1979:
1976:
1973:
1969:
1965:
1961:
1957:
1954:
1951:
1948:
1944:
1940:
1938:
1934:
1933:Tunnel diodes
1931:
1928:
1924:
1921:
1918:
1915:
1911:
1907:
1905:
1901:
1898:
1894:
1890:
1889:step recovery
1886:
1884:
1880:
1877:
1873:
1871:-doped diodes
1870:
1867:
1863:
1860:
1857:
1853:
1849:
1844:
1840:
1836:
1831:
1828:
1826:
1823:
1820:
1816:
1812:
1808:
1804:
1800:
1796:
1792:
1790:
1787:
1784:
1780:
1776:
1772:
1768:
1767:photodetector
1764:
1760:
1758:
1755:
1752:
1748:
1744:
1742:
1739:
1736:
1732:
1728:
1724:
1720:
1718:
1715:
1712:
1711:opto-isolator
1707:
1703:
1699:
1695:
1691:
1687:
1683:
1679:
1675:
1672:
1669:
1666:
1663:
1659:
1655:
1653:
1650:
1647:
1645:
1642:
1639:
1635:
1631:
1627:
1622:
1618:
1616:
1613:
1610:
1605:
1603:
1600:
1599:
1598:
1596:
1593:
1589:
1584:
1580:
1579:cuprous oxide
1576:
1572:
1564:
1560:
1553:
1551:
1549:
1544:
1542:
1538:
1518:
1511:
1509:
1507:
1506:
1499:
1497:
1470:
1466:
1459:
1449:
1444:
1434:
1430:
1427:
1415:
1413:
1411:
1407:
1404:
1400:
1396:
1392:
1388:
1384:
1378:
1370:
1365:
1361:
1358:
1355:
1351:
1347:
1343:
1340:
1335:
1331:
1323:
1319:
1316:
1313:
1312:Zener voltage
1309:
1305:
1301:
1297:
1293:
1290:
1289:
1288:
1286:
1275:
1271:
1267:
1263:
1259:
1255:
1248:
1246:
1241:
1233:
1231:
1229:
1225:
1218:
1210:
1205:
1201:
1197:
1193:
1188:
1184:
1181:
1177:
1173:
1168:
1166:
1162:
1157:
1153:
1149:
1145:
1144:
1139:
1138:
1133:
1125:
1123:
1121:
1117:
1111:
1103:
1101:
1099:
1095:
1091:
1087:
1083:
1079:
1075:
1071:
1067:
1063:
1059:
1055:
1051:
1050:semiconductor
1045:
1037:
1032:
1030:
1027:
1023:
1019:
1011:
1006:
1001:
994:
992:
989:
984:
981:
979:
978:work function
975:
972:
968:
964:
960:
956:
952:
943:
939:
937:
933:
928:
926:
922:
918:
914:
910:
906:
896:
892:
888:
882:
877:
874:
870:
866:
862:
859:
853:
850:
847:
843:
838:
832:
827:
818:
816:
814:
810:
806:
802:
797:
795:
792:
788:
787:
783:
779:
775:
770:
766:
762:
758:
754:
751:
747:
743:
739:
735:
729:
721:
719:
717:
713:
708:
706:
702:
698:
694:
690:
686:
682:
677:
673:
669:
665:
661:
657:
653:
648:
644:
639:
638:Fleming valve
635:
631:
627:
623:
620:
616:
615:Edison effect
611:
606:
604:
600:
597:
593:
589:
586:) diodes and
585:
577:
572:
567:
559:
557:
555:
550:
548:
544:
540:
536:
535:IMPATT diodes
532:
528:
527:tunnel diodes
524:
521:
517:
512:
508:
500:
498:
496:
492:
488:
480:
478:
476:
472:
467:
465:
461:
460:semi-log plot
457:
453:
450:
445:
443:
438:
430:
426:
422:
418:
408:
404:
401:
398:
397:
393:
390:
386:
383:
382:
379:
376:0.6 V to 0.7
375:
372:
371:
367:
365:
361:
360:
356:
354:
350:
349:
345:
342:
341:
335:
333:
329:
325:
317:
312:
305:
303:
301:
297:
296:radio signals
293:
289:
288:rectification
285:
281:
277:
273:
265:
260:
258:
256:
252:
248:
244:
240:
236:
232:
228:
224:
219:
217:
213:
209:
205:
201:
198:The obsolete
196:
194:
190:
186:
182:
178:
174:
171:
167:
163:
159:
158:semiconductor
154:
152:
148:
144:
140:
136:
133:
129:
121:
117:
113:
109:
105:
100:
91:
86:
83:
79:
76:
72:
69:
63:
60:
57:
53:
46:
41:
33:
19:
18:Diode network
5029:Cold cathode
4996:Storage tube
4886:Vacuum tubes
4835:Neutron tube
4810:Beam tetrode
4792:Vacuum tubes
4497:
4377:Power MOSFET
4187:
4176:
4170:
4164:
4153:
4142:
4124:
4113:
4102:
4083:
4056:
4049:
4037:
4026:. Retrieved
4022:the original
4017:
4008:
3994:
3983:. Retrieved
3972:
3961:. Retrieved
3957:the original
3947:
3936:. Retrieved
3926:
3901:
3897:
3891:
3866:
3862:
3856:
3844:
3829:
3824:
3805:
3794:. Retrieved
3790:the original
3780:
3768:
3757:. Retrieved
3753:the original
3743:
3731:
3714:
3702:
3681:cite journal
3658:
3639:
3609:(11): 1079.
3606:
3602:
3596:
3577:
3567:. New York:
3564:
3541:
3527:
3506:
3499:
3485:
3478:
3467:
3427:. Retrieved
3420:the original
3376:
3369:
3310:
3306:
3296:
3287:
3281:
3273:the original
3263:
3255:
3246:
3238:
3209:
3189:
3182:
3170:
3162:
3158:
3149:
3138:. Retrieved
3128:
3095:
3091:
3085:
3070:
3058:
3050:
3046:
3038:
3016:(4): 46–47.
3013:
3009:
3003:
2983:
2960:. Retrieved
2956:
2947:
2936:. Retrieved
2932:the original
2922:
2911:. Retrieved
2909:. 2010-05-25
2901:
2881:
2874:
2854:
2847:
2827:
2820:
2801:p–n junction
2791:Lambda diode
2737:
2733:
2725:
2723:
2712: and
2695:
2682:
2660:
2637:phantom keys
2626:
2614:
2600:
2592:
2588:
2578:
2567:
2525:
2491:
2440:
2431:
2416:
2411:or earlier,
2391:
2363:
2357:
2326:
2306:Applications
2293:
2236:
2213:Pro Electron
2210:
2207:Pro Electron
2198:
2173:
2171:
2162:Pro Electron
2151:
2097:Tunnel diode
2004:
1978:Zener diodes
1937:Esaki diodes
1909:
1903:
1888:
1881:Snap-off or
1794:
1717:Laser diodes
1706:scintillator
1702:"white" LEDs
1696:to the near
1667:to be built.
1637:
1633:
1629:
1625:
1608:
1568:
1545:
1519:
1515:
1503:
1500:
1419:
1393:co-inventor
1386:
1382:
1380:
1363:
1360:Leveling off
1359:
1341:
1321:
1317:
1311:
1291:
1282:
1273:
1269:
1265:
1261:
1243:
1234:Forward bias
1220:
1211:Reverse bias
1192:p–n junction
1169:
1148:p–n junction
1141:
1135:
1129:
1113:
1082:p–n junction
1072:), called a
1047:
1025:
1021:
1015:
1004:
985:
982:
948:
929:
924:
920:
902:
894:
890:
886:
813:small signal
809:power supply
804:
800:
798:
772:
768:
764:
760:
756:
752:
745:
731:
709:
704:
700:
649:
607:
582:Thermionic (
581:
551:
523:oscillations
504:
491:Zener diodes
484:
468:
446:
436:
428:
421:voltage drop
420:
416:
414:
373:Silicon p–n
331:
327:
323:
321:
275:
271:
269:
235:demodulation
220:
199:
197:
166:p–n junction
155:
145:(asymmetric
127:
125:
5195:Transformer
4937:Sutton tube
4777:Charge pump
4630:Memory cell
4560:Zener diode
4522:Laser diode
4405:transistors
4287:transistors
4044:. omega.com
3934:. Jedec.org
3869:(12): 654.
3569:McGraw-Hill
3256:Electronics
3053:: 257–266.
2581:temperature
2540:cosmic rays
2536:electronics
2504:logic gates
2495:constructs
2488:Diode logic
2482:Logic gates
2476:Diode types
2472:transistors
2405:alternators
2125:Zener diode
1966:) and FLL (
1771:solar cells
1757:Photodiodes
1698:ultraviolet
1690:wavelengths
1665:oscillators
1652:Gunn diodes
1403:exponential
1346:exponential
1308:Zener diode
1098:check valve
1005:cat whisker
805:"rectifier"
750:Greek roots
695:and in the
588:solid-state
584:vacuum-tube
576:vacuum tube
531:Gunn diodes
449:exponential
343:Diode Type
284:check valve
225:to convert
210:, a heated
204:vacuum tube
170:exponential
162:crystalline
147:conductance
112:Zener diode
5289:Categories
5267:reed relay
5257:Parametron
5190:Thermistor
5168:resettable
5127:Connector
5088:Adjustable
5064:Nixie tube
5034:Crossatron
5001:Trochotron
4976:Iconoscope
4971:Charactron
4948:X-ray tube
4820:Compactron
4800:Acorn tube
4757:Buck–boost
4678:Solaristor
4540:Photodiode
4517:Gunn diode
4513:(CLD, CRD)
4295:Transistor
4028:2013-12-19
3985:2008-09-22
3963:2010-08-06
3938:2008-09-22
3796:2010-08-06
3759:2010-08-06
3429:2018-05-24
3320:2103.15809
3285:Sylvania,
3140:2008-09-22
2962:2023-01-19
2938:2010-08-06
2913:2010-08-06
2812:References
2563:gamma rays
2409:commutator
2393:Rectifiers
2349:transducer
2268:Transistor
2164:standard:
2054:Photodiode
1960:capacitors
1945:caused by
1927:transients
1900:Stabistors
1839:rectifiers
1819:thyristors
1809:, such as
1789:PIN diodes
1775:photometry
1581:and later
1505:square law
1283:A diode's
1238:See also:
1228:photodiode
1215:See also:
1022:non-welded
965:, such as
909:electrodes
849:Thermionic
815:circuits.
794:telegraphy
734:rectifiers
425:Datasheets
362:Germanium
292:modulation
223:rectifiers
208:electrodes
151:resistance
141:primarily
5230:Capacitor
5074:Trigatron
5069:Thyratron
5059:Neon lamp
4986:Monoscope
4866:Phototube
4850:Pentagrid
4815:Barretter
4700:Trancitor
4695:Thyristor
4620:Memristor
4545:PIN diode
4322:(ChemFET)
4193:(archive)
4182:(archive)
4159:(archive)
4148:(archive)
4130:(archive)
4119:(archive)
4108:(archive)
4097:(archive)
3977:I.D.E.A.
3904:(5): 55.
3361:248414862
3345:1476-4687
3120:0734-2101
2740:is used.
2706:logarithm
2532:energetic
2512:inversion
2380:Rectifier
2341:rectifies
2337:amplitude
2319:A simple
2273:Thyristor
2263:Rectifier
2168:EIA/JEDEC
1910:stabistor
1908:The term
1896:carriers.
1887:The term
1856:detectors
1795:intrinsic
1662:microwave
1588:substrate
1575:germanium
1537:slew rate
1498:article.
1387:diode law
1300:breakdown
1292:Breakdown
1262:breakdown
1245:voltage.
1165:insulator
1054:germanium
1044:p–n diode
971:strontium
951:electrons
837:rectifier
791:multiplex
748:from the
728:Rectifier
722:Etymology
681:Bell Labs
622:voltmeter
608:In 1873,
592:detectors
547:microwave
462:(using a
206:with two
193:germanium
130:is a two-
5252:Inductor
5222:Reactive
5200:Varistor
5180:Resistor
5158:Antifuse
5044:Ignitron
5039:Dekatron
4927:Klystron
4916:Gyrotron
4845:Nuvistor
4762:Split-pi
4648:(MOS IC)
4615:Memistor
4373:(MuGFET)
4367:(MOSFET)
4339:(FinFET)
3813:Archived
3647:Archived
3585:Archived
3353:35478238
3030:45476055
2796:Lr-diode
2744:See also
2700:and its
2683:A diode
2601:negative
2593:positive
2478:above).
2466:). Many
2448:H-bridge
2323:circuit.
2289:Varistor
1988:Transorb
1876:platinum
1830:Schottky
1813:, power
1777:, or in
1694:infrared
1583:selenium
1334:Semi-log
1268:biased,
936:Nichrome
932:red heat
738:tetrodes
509:and the
419:or just
385:Infrared
353:Schottky
351:Silicon
314:Forward
132:terminal
5153:Ferrite
5121:Passive
5112:Varicap
5100:digital
5049:Krytron
4871:Tetrode
4856:Pentode
4710:Varicap
4691:(3D IC)
4667:RF CMOS
4571:devices
4345:(FGMOS)
4276:devices
3906:Bibcode
3871:Bibcode
3631:7012254
3611:Bibcode
3381:. 1886.
3325:Bibcode
3100:Bibcode
2665:Clamper
2617:battery
2250:Mullard
2140:cathode
2111:Varicap
1953:Varicap
1815:MOSFETs
1686:photons
1571:silicon
1385:or the
1270:forward
1266:reverse
1094:cathode
913:cathode
891:cathode
865:Cathode
801:rectify
782:pentode
778:tetrode
676:silicon
656:mineral
613:called
560:History
402:(LEDs)
394:~1.2 V
276:reverse
272:forward
212:cathode
185:silicon
139:current
116:cathode
75:cathode
59:Passive
5300:Diodes
5185:Switch
4876:Triode
4840:Nonode
4805:Audion
4685:(SITh)
4569:Other
4536:(OLED)
4498:Diodes
4449:(LET)
4431:(FET)
4403:Other
4351:(IGBT)
4328:(CMOS)
4315:BioFET
4310:BiCMOS
4090:
3836:
3629:
3359:
3351:
3343:
3307:Nature
3197:
3118:
3028:
2991:
2889:
2862:
2835:
2605:kelvin
2589:appear
2547:pulses
2413:dynamo
2366:) and
2345:filter
2189:1N580x
2185:1N400x
2181:1N4148
2179:1N914/
2175:EIA370
2014:flow.
1865:diode.
1854:, and
1852:mixers
1817:, and
1673:(LEDs)
1399:models
1200:doping
1180:dopant
974:oxides
967:barium
959:oxides
915:and a
895:heater
893:, and
786:hexode
774:triode
763:(from
755:(from
693:Purdue
511:doping
391:) p–n
245:or as
233:(DC),
214:and a
5262:Relay
5235:types
5173:eFUSE
4944:(TWT)
4932:Maser
4923:(IOT)
4912:(CFA)
4901:(BWO)
4825:Diode
4772:SEPIC
4752:Boost
4705:TRIAC
4674:(SCR)
4637:(MOV)
4611:(LEC)
4530:(LED)
4489:(UJT)
4478:(SIT)
4472:(PUT)
4415:(BJT)
4384:(TFT)
4360:LDMOS
4355:ISFET
3723:(PDF)
3627:S2CID
3533:(PDF)
3491:(PDF)
3423:(PDF)
3416:(PDF)
3357:S2CID
3315:arXiv
3026:S2CID
2619:. An
2544:noise
2456:relay
2279:TRIAC
2158:JEDEC
2084:(TVS)
2041:(LED)
2026:Diode
1922:(TVS)
1811:IGBTs
1773:, in
1727:laser
1636:, or
1621:JFETs
1156:doped
1152:doped
1090:anode
1070:holes
917:plate
887:plate
861:Plate
769:diode
746:diode
596:12SQ7
294:from
282:is a
243:logic
216:plate
202:is a
128:diode
122:flow.
71:Anode
38:Diode
5205:Wire
5163:Fuse
4747:Buck
4600:(IC)
4588:DIAC
4524:(LD)
4393:UMOS
4388:VMOS
4305:PMOS
4300:NMOS
4285:MOS
4088:ISBN
3834:ISBN
3694:help
3349:PMID
3341:ISSN
3195:ISBN
3116:ISSN
2989:ISBN
2887:ISBN
2860:ISBN
2833:ISBN
2736:for
2730:PCBs
2704:the
2499:and
2454:and
2446:and
2442:in (
2284:DIAC
2199:The
1869:Gold
1749:for
1626:CLDs
1592:CMOS
1401:the
1381:The
1354:knee
1056:and
969:and
911:: a
863:and
845:Type
765:οδός
456:knee
389:GaAs
191:and
73:and
55:Type
4767:Ćuk
4062:550
3914:doi
3879:doi
3669:doi
3619:doi
3333:doi
3311:604
3163:153
3108:doi
3018:doi
2716:).
2518:).
2497:AND
2195:JIS
2154:EIA
1935:or
1902:or
1893:SRD
1573:or
1230:).
1140:or
961:of
923:or
761:ode
703:or
689:MIT
670:by
497:).
364:p–n
330:or
326:or
298:in
237:in
5291::
5141:RF
4890:RF
4094:.
4016:.
3912:.
3902:11
3900:.
3877:.
3867:12
3865:.
3685::
3683:}}
3679:{{
3667:.
3625:.
3617:.
3607:35
3605:.
3555:^
3517:^
3455:^
3438:^
3404:^
3387:^
3355:.
3347:.
3339:.
3331:.
3323:.
3309:.
3305:.
3254:,
3237:,
3224:^
3161:,
3114:.
3106:.
3096:16
3094:.
3051:46
3024:.
3012:.
2971:^
2955:.
2734:CR
2647:.
2538:,
2506:.
2501:OR
2450:)
2355:.
1850:,
1632:,
1628:,
1543:.
1397:)
1264:,
1190:A
1167:.
1100:.
889:,
803:,
796:.
784:,
780:,
776:,
757:δί
753:di
697:UK
691:,
687:,
683:,
619:DC
556:.
533:,
529:,
477:.
444:)
431:(V
302:.
156:A
126:A
4892:)
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4251:t
4244:v
4064:.
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3941:.
3920:.
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3885:.
3881::
3873::
3799:.
3762:.
3725:.
3696:)
3692:(
3675:.
3671::
3633:.
3621::
3613::
3549:.
3535:.
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3511:.
3493:.
3472:.
3449:.
3432:.
3398:.
3363:.
3335::
3327::
3317::
3203:.
3143:.
3122:.
3110::
3102::
3032:.
3020::
3014:5
2997:.
2965:.
2941:.
2916:.
2895:.
2868:.
2841:.
2726:D
2362:(
2156:/
2142:.
1974:.
1858:.
1821:.
1785:.
1737:.
1713:.
1640:.
1532:r
1529:Q
1525:r
1522:t
1480:)
1475:T
1471:V
1467:n
1464:(
1460:/
1454:D
1450:V
1445:e
1439:S
1435:I
1431:=
1428:I
1325:s
1322:I
1277:d
1274:V
897:.
839:.
525:(
514:(
437:°
433:F
387:(
378:V
34:.
20:)
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