32:
93:
meaning that secondary, backscattered and forward scattered (if the beam dwells on already deposited material) electrons contribute to the deposition. As these electrons can leave the substrate up to several microns away from the point of impact of the electron beam (depending on its energy), material deposition is not necessarily confined to the irradiated spot. To overcome this problem, compensation algorithms can be applied, which is typical for electron beam lithography.
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221:(FIB) setup, which strongly limits characterization of the deposit during or right after the deposition. Only SEM-like imaging using secondary electrons is possible, and even that imaging is restricted to short observations due to sample damaging by the Ga beam. The use of a dual beam instrument, that combines a FIB and an SEM in one, circumvents this limitation.
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40:
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Primary electron energies in SEMs or STEMs are usually between 10 and 300 keV, where reactions induced by electron impact, i.e. precursor dissociation, have a relatively low cross section. The majority of decomposition occurs via low energy electron impact: either by low energy secondary electrons,
74:
In the presence of the precursor gas, the electron beam is scanned over the substrate, resulting in deposition of material. The scanning is usually computer-controlled. The deposition rate depends on a variety of processing parameters, such as the partial precursor pressure, substrate temperature,
92:
Primary S(T)EM electrons can be focused into spots as small as ~0.045 nm. While the smallest structures deposited so far by EBID are point deposits of ~0.7 nm diameter, deposits usually have a larger lateral size than the beam spot size. The reason are the so-called proximity effects,
70:
When deposition occurs at a high temperature or involves corrosive gases, a specially designed deposition chamber is used; it is isolated from the microscope, and the beam is introduced into it through a micrometre-sized orifice. The small orifice size maintains differential pressure in the
241:
Nanostructures of virtually any 3-dimensional shape can be deposited using computer-controlled scanning of electron beam. Only the starting point has to be attached to the substrate, the rest of the structure can be free standing. The achieved shapes and devices are remarkable:
839:
Luxmoore, I; Ross, I; Cullis, A; Fry, P; Orr, J; Buckle, P; Jefferson, J (2007). "Low temperature electrical characterisation of tungsten nano-wires fabricated by electron and ion beam induced chemical vapour deposition".
207:, usually 30 keV Ga, is used instead of the electron beam. In both techniques, it is not the primary beam, but secondary electrons which cause the deposition. IBID has the following disadvantages as compared to EBID:
67:, and introduced, at accurately controlled rate, into the high-vacuum chamber of the electron microscope. Alternatively, solid precursors can be sublimated by the electron beam itself.
19:
is a process of decomposing gaseous molecules by an electron beam leading to deposition of non-volatile fragments onto a nearby substrate. The electron beam is usually provided by a
139:, etc.) result in cleaner deposition, but are more difficult to handle as they are toxic and corrosive. Compound materials are deposited from specially crafted, exotic gases, e.g. D
1203:
101:
As of 2008 the range of materials deposited by EBID included Al, Au, amorphous carbon, diamond, Co, Cr, Cu, Fe, GaAs, GaN, Ge, Mo, Nb, Ni, Os, Pd, Pt, Rh, Ru, Re, Si, Si
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132:. They are easily available, however, due to incorporation of carbon atoms from the CO ligands, deposits often exhibit a low metal content. Metal-halogen complexes (
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Very flexible regarding deposit shape and composition; the electron beam is lithographically controlled and a multitude of potential precursors is available
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23:, which results in high spatial accuracy (potentially below one nanometer) and the possibility to produce free-standing, three-dimensional structures.
1191:
499:
Kiyohara, Shuji; Takamatsu, Hideaki; Mori, Katsumi (2002). "Microfabrication of diamond films by localized electron beam chemical vapour deposition".
358:
52:
1335:
117:, W, and was being expanded. The limiting factor is the availability of appropriate precursors, gaseous or having a low sublimation temperature.
191:
Controlling the elemental or chemical deposit composition is still a major challenge, as the precursor decomposition pathways are mostly unknown
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which cross the substrate-vacuum interface and contribute to the total current density, or inelastically scattered (backscattered) electrons.
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Ga ions introduce additional contamination and radiation damage to the deposited structure, which is important for electronic applications.
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is applied instead. Precursor materials are typically liquid or solid and gasified prior to deposition, usually through vaporization or
897:
K. Molhave: "Tools for in-situ manipulations and characterization of nanostructures", PhD thesis, Technical
University of Denmark, 2004
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Nayak, A.; Banerjee, H. D. (1995). "Electron beam activated plasma chemical vapour deposition of polycrystalline diamond films".
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878:"Nanofabrication: Fundamentals and Applications" Ed.: Ampere A. Tseng, World Scientific Publishing Company (March 4, 2008),
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20:
791:
Van Dorp, Willem F. (2005). "Approaching the
Resolution Limit of Nanometer-Scale Electron Beam-Induced Deposition".
31:
1310:
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56:
689:"Fabrication and characterization of nanostructures on insulator substrates by electron-beam-induced deposition"
71:
microscope (vacuum) and deposition chamber (no vacuum). Such deposition mode has been used for EBID of diamond.
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1315:
580:
Randolph, S.; Fowlkes, J.; Rack, P. (2006). "Focused, Nanoscale
Electron-Beam-Induced Deposition and Etching".
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Carden, Will G.; Lu, Hang; Spencer, Julie A.; Fairbrother, D. Howard; McElwee-White, Lisa (2018-06-01).
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Serial material deposition and low deposition rates in general limit throughput and thus mass production
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431:"Advances in Focused Ion Beam Tomography for Three-Dimensional Characterization in Materials Science"
178:) during or right after deposition. In situ electrical and optical characterization is also possible.
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electron beam parameters, applied current density, etc. It usually is in the order of 10 nm/s.
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Angular spread of secondary electrons is larger in IBID thus resulting in lower spatial resolution.
429:
Mura, Francesco; Cognigni, Flavio; Ferroni, Matteo; Morandi, Vittorio; Rossi, Marco (2023-08-24).
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Ion-beam-induced deposition (IBID) is very similar to EBID with the major difference that
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The deposited material can be characterized using the electron microscopy techniques (
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Lateral size of the produced structures and accuracy of deposition are unprecedented
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392:"Mechanism-based design of precursors for focused electron beam-induced deposition"
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632:"Nanofabrication by advanced electron microscopy using intense and focused beam"
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The most popular precursors for deposition of elemental solids are
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Proximity effects can lead to unintended structure broadening
746:"Atomic-Resolution Imaging with a Sub-50-pm Electron Probe"
744:
Erni, Rolf; Rossell, MD; Kisielowski, C; Dahmen, U (2009).
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Critical
Reviews of Solid State and Materials Sciences
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Snapshots of growing a doll-like nanostructure by IBID
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55:(STEM) is commonly used. Another method is
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359:Scanning transmission electron microscopy
53:scanning transmission electron microscope
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17:Electron-beam-induced deposition (EBID)
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501:Semiconductor Science and Technology
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967:Timeline of microscope technology
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364:Transmission electron microscopy
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1326:Precession electron diffraction
47:The focused electron beam of a
770:10.1103/PhysRevLett.102.096101
687:M. Song and K. Furuya (2008).
1:
713:10.1088/1468-6996/9/2/023002
656:10.1088/1468-6996/9/1/014110
354:Scanning electron microscope
225:The advantages of IBID are:
49:scanning electron microscope
21:scanning electron microscope
521:10.1088/0268-1242/17/10/311
229:Much higher deposition rate
199:Ion-beam-induced deposition
57:ion-beam-induced deposition
1624:
1311:Immune electron microscopy
1229:Annular dark-field imaging
1044:Everhart–Thornley detector
35:Scheme of the EBID process
1553:
1465:Hitachi High-Technologies
862:10.1016/j.tsf.2007.02.029
602:10.1080/10408430600930438
259:Superconducting nanowires
252:Nanoloops (potential nano
1490:Thermo Fisher Scientific
1316:Geometric phase analysis
1204:Aberration-Corrected TEM
693:Sci. Technol. Adv. Mater
636:Sci. Technol. Adv. Mater
349:Organometallic chemistry
97:Materials and precursors
1239:Charge contrast imaging
1049:Field electron emission
750:Physical Review Letters
556:10.1002/pssa.2211510112
536:Physica Status Solidi A
217:Deposition occurs in a
1429:Thomas Eugene Everhart
316:Letter Φ grown by EBID
44:
36:
1434:Vernon Ellis Cosslett
1254:Dark-field microscopy
302:Leaning Tower of Pisa
246:World smallest magnet
42:
34:
1439:Vladimir K. Zworykin
1089:Correlative light EM
998:Electron diffraction
176:electron diffraction
79:Deposition mechanism
1603:Electron microscopy
1404:Manfred von Ardenne
1389:Gerasimos Danilatos
1296:Electron tomography
1291:Electron holography
1234:Cathodoluminescence
1013:Secondary electrons
1003:Electron scattering
947:Electron microscopy
933:Electron microscopy
854:2007TSF...515.6791L
805:2005NanoL...5.1303V
762:2009PhRvL.102i6101E
705:2008STAdM...9b3002S
648:2008STAdM...9a4110F
594:2006CRSSM..31...55R
548:1995PSSAR.151..107N
513:2002SeScT..17.1096K
447:2023Mate...16.5808M
408:10.1557/mrc.2018.77
329:Electron microscopy
1526:Digital Micrograph
1132:Environmental SEM
1054:Field emission gun
1018:X-ray fluorescence
630:K. Furuya (2008).
456:10.3390/ma16175808
396:MRS Communications
370:Lisa McElwee-White
368:Researcher :
88:Spatial resolution
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1414:Maximilian Haider
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892:978-981-270-076-6
813:10.1021/nl050522i
249:Fractal nanotrees
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183:Disadvantages
182:
177:
173:
169:
165:
161:
158:
155:
154:
150:
148:
138:
131:
128:structure or
123:
118:
96:
94:
87:
85:
78:
76:
72:
68:
66:
62:
58:
54:
50:
41:
33:
26:
24:
22:
18:
1574:
1562:
1516:EM Data Bank
1480:Nion Company
1374:Dennis Gabor
1364:Albert Crewe
1142:Confocal SEM
1039:Electron gun
988:Auger effect
848:(17): 6791.
845:
841:
796:
793:Nano Letters
792:
786:
753:
749:
739:
696:
692:
682:
639:
635:
585:
581:
539:
535:
529:
507:(10): 1096.
504:
500:
441:(17): 5808.
438:
434:
424:
399:
395:
385:
240:
224:
202:
130:metallocenes
119:
100:
91:
82:
73:
69:
46:
16:
15:
1460:FEI Company
1394:Harald Rose
1384:Ernst Ruska
1073:Microscopes
981:with matter
979:interaction
344:Metallocene
300:A model of
284:A model of
65:sublimation
1592:Categories
1541:Multislice
1357:Developers
1217:Techniques
962:Microscope
957:Micrograph
377:References
151:Advantages
43:EBID setup
1409:Max Knoll
1064:Stigmator
588:(3): 55.
465:1996-1944
435:Materials
416:2159-6867
147:for GaN.
124:of Me(CO)
51:(SEM) or
1564:Category
1511:CrysTBox
1499:Software
1170:Cryo-TEM
977:Electron
821:16178228
778:19392535
731:27877950
674:27877936
610:93769658
483:37687502
474:10488958
322:See also
1576:Commons
1224:4D STEM
1197:4D STEM
1175:Cryo-ET
1147:SEM-XRF
1137:CryoSEM
1094:Cryo-EM
952:History
850:Bibcode
801:Bibcode
758:Bibcode
722:5099707
701:Bibcode
665:5099805
644:Bibcode
590:Bibcode
544:Bibcode
509:Bibcode
443:Bibcode
256:device)
27:Process
1521:EMsoft
1506:CASINO
1485:TESCAN
1350:Others
1249:cryoEM
940:Basics
890:
882:
819:
776:
729:
719:
672:
662:
608:
481:
471:
463:
414:
237:Shapes
1475:Leica
1321:PINEM
1187:HRTEM
1182:EFTEM
606:S2CID
254:SQUID
113:, TiO
109:, SiO
1536:IUCr
1470:JEOL
1341:WBDF
1336:WDXS
1286:EBIC
1281:EELS
1276:ECCI
1264:EBSD
1244:CBED
1192:STEM
888:ISBN
880:ISBN
817:PMID
774:PMID
727:PMID
670:PMID
479:PMID
461:ISSN
412:ISSN
168:EELS
1306:FEM
1301:FIB
1269:TKD
1259:EDS
1162:TEM
1124:SEM
1099:EMP
858:doi
846:515
809:doi
766:doi
754:102
717:PMC
709:doi
660:PMC
652:doi
598:doi
552:doi
540:151
517:doi
469:PMC
451:doi
404:doi
172:EDS
164:TEM
143:GaN
1594::
1081:EM
886:,
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815:.
807:.
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174:,
170:,
166:,
134:WF
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445::
418:.
406::
400:8
145:3
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136:6
126:x
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111:x
107:4
105:N
103:3
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