43:
104:
meaning that secondary, backscattered and forward scattered (if the beam dwells on already deposited material) electrons contribute to the deposition. As these electrons can leave the substrate up to several microns away from the point of impact of the electron beam (depending on its energy), material deposition is not necessarily confined to the irradiated spot. To overcome this problem, compensation algorithms can be applied, which is typical for electron beam lithography.
278:
290:
1570:
306:
322:
232:(FIB) setup, which strongly limits characterization of the deposit during or right after the deposition. Only SEM-like imaging using secondary electrons is possible, and even that imaging is restricted to short observations due to sample damaging by the Ga beam. The use of a dual beam instrument, that combines a FIB and an SEM in one, circumvents this limitation.
1582:
51:
94:
Primary electron energies in SEMs or STEMs are usually between 10 and 300 keV, where reactions induced by electron impact, i.e. precursor dissociation, have a relatively low cross section. The majority of decomposition occurs via low energy electron impact: either by low energy secondary electrons,
85:
In the presence of the precursor gas, the electron beam is scanned over the substrate, resulting in deposition of material. The scanning is usually computer-controlled. The deposition rate depends on a variety of processing parameters, such as the partial precursor pressure, substrate temperature,
103:
Primary S(T)EM electrons can be focused into spots as small as ~0.045 nm. While the smallest structures deposited so far by EBID are point deposits of ~0.7 nm diameter, deposits usually have a larger lateral size than the beam spot size. The reason are the so-called proximity effects,
81:
When deposition occurs at a high temperature or involves corrosive gases, a specially designed deposition chamber is used; it is isolated from the microscope, and the beam is introduced into it through a micrometre-sized orifice. The small orifice size maintains differential pressure in the
252:
Nanostructures of virtually any 3-dimensional shape can be deposited using computer-controlled scanning of electron beam. Only the starting point has to be attached to the substrate, the rest of the structure can be free standing. The achieved shapes and devices are remarkable:
850:
Luxmoore, I; Ross, I; Cullis, A; Fry, P; Orr, J; Buckle, P; Jefferson, J (2007). "Low temperature electrical characterisation of tungsten nano-wires fabricated by electron and ion beam induced chemical vapour deposition".
218:, usually 30 keV Ga, is used instead of the electron beam. In both techniques, it is not the primary beam, but secondary electrons which cause the deposition. IBID has the following disadvantages as compared to EBID:
78:, and introduced, at accurately controlled rate, into the high-vacuum chamber of the electron microscope. Alternatively, solid precursors can be sublimated by the electron beam itself.
30:
is a process of decomposing gaseous molecules by an electron beam leading to deposition of non-volatile fragments onto a nearby substrate. The electron beam is usually provided by a
150:, etc.) result in cleaner deposition, but are more difficult to handle as they are toxic and corrosive. Compound materials are deposited from specially crafted, exotic gases, e.g. D
1214:
112:
As of 2008 the range of materials deposited by EBID included Al, Au, amorphous carbon, diamond, Co, Cr, Cu, Fe, GaAs, GaN, Ge, Mo, Nb, Ni, Os, Pd, Pt, Rh, Ru, Re, Si, Si
1197:
1192:
143:. They are easily available, however, due to incorporation of carbon atoms from the CO ligands, deposits often exhibit a low metal content. Metal-halogen complexes (
1341:
1044:
1331:
934:
1234:
1207:
167:
Very flexible regarding deposit shape and composition; the electron beam is lithographically controlled and a multitude of potential precursors is available
1142:
34:, which results in high spatial accuracy (potentially below one nanometer) and the possibility to produce free-standing, three-dimensional structures.
1202:
510:
Kiyohara, Shuji; Takamatsu, Hideaki; Mori, Katsumi (2002). "Microfabrication of diamond films by localized electron beam chemical vapour deposition".
369:
63:
1346:
128:, W, and was being expanded. The limiting factor is the availability of appropriate precursors, gaseous or having a low sublimation temperature.
202:
Controlling the elemental or chemical deposit composition is still a major challenge, as the precursor decomposition pathways are mostly unknown
1162:
277:
95:
which cross the substrate-vacuum interface and contribute to the total current density, or inelastically scattered (backscattered) electrons.
1286:
1152:
1099:
902:
907:
1541:
1269:
1254:
1180:
225:
Ga ions introduce additional contamination and radiation damage to the deposited structure, which is important for electronic applications.
182:
74:
is applied instead. Precursor materials are typically liquid or solid and gasified prior to deposition, usually through vaporization or
908:
K. Molhave: "Tools for in-situ manipulations and characterization of nanostructures", PhD thesis, Technical
University of Denmark, 2004
1291:
1124:
977:
927:
894:
1279:
1274:
1172:
1147:
1114:
545:
Nayak, A.; Banerjee, H. D. (1995). "Electron beam activated plasma chemical vapour deposition of polycrystalline diamond films".
374:
289:
174:
1351:
1336:
1316:
1054:
305:
1119:
962:
889:"Nanofabrication: Fundamentals and Applications" Ed.: Ampere A. Tseng, World Scientific Publishing Company (March 4, 2008),
1586:
1296:
1259:
1104:
1613:
1574:
1134:
920:
364:
59:
31:
802:
Van Dorp, Willem F. (2005). "Approaching the
Resolution Limit of Nanometer-Scale Electron Beam-Induced Deposition".
42:
1321:
1239:
67:
700:"Fabrication and characterization of nanostructures on insulator substrates by electron-beam-induced deposition"
82:
microscope (vacuum) and deposition chamber (no vacuum). Such deposition mode has been used for EBID of diamond.
1546:
1500:
1326:
591:
Randolph, S.; Fowlkes, J.; Rack, P. (2006). "Focused, Nanoscale
Electron-Beam-Induced Deposition and Etching".
359:
1536:
1618:
1249:
1185:
1059:
1018:
75:
1608:
1439:
1444:
1264:
401:
Carden, Will G.; Lu, Hang; Spencer, Julie A.; Fairbrother, D. Howard; McElwee-White, Lisa (2018-06-01).
312:
199:
Serial material deposition and low deposition rates in general limit throughput and thus mass production
144:
1449:
1008:
860:
811:
768:
711:
654:
600:
554:
519:
453:
442:"Advances in Focused Ion Beam Tomography for Three-Dimensional Characterization in Materials Science"
189:) during or right after deposition. In situ electrical and optical characterization is also possible.
186:
86:
electron beam parameters, applied current density, etc. It usually is in the order of 10 nm/s.
1414:
1399:
1306:
1301:
1244:
1109:
1091:
1023:
1013:
957:
943:
339:
321:
222:
Angular spread of secondary electrons is larger in IBID thus resulting in lower spatial resolution.
440:
Mura, Francesco; Cognigni, Flavio; Ferroni, Matteo; Morandi, Vittorio; Rossi, Marco (2023-08-24).
1485:
1064:
1028:
616:
380:
17:
1429:
1424:
898:
890:
827:
784:
737:
680:
489:
471:
422:
1379:
1311:
868:
819:
776:
727:
719:
670:
662:
608:
562:
527:
479:
461:
414:
344:
229:
215:
71:
1434:
214:
Ion-beam-induced deposition (IBID) is very similar to EBID with the major difference that
864:
815:
772:
715:
658:
604:
558:
523:
484:
457:
441:
1389:
1003:
732:
723:
699:
675:
666:
642:
349:
132:
531:
173:
The deposited material can be characterized using the electron microscopy techniques (
1602:
1465:
1409:
1069:
296:
1516:
620:
170:
Lateral size of the produced structures and accuracy of deposition are unprecedented
1526:
1490:
1384:
1374:
1049:
998:
780:
403:"Mechanism-based design of precursors for focused electron beam-induced deposition"
140:
1470:
1404:
1394:
643:"Nanofabrication by advanced electron microscopy using intense and focused beam"
354:
1551:
972:
967:
872:
612:
475:
426:
1419:
1074:
566:
831:
788:
741:
684:
493:
1521:
987:
418:
1531:
1475:
1157:
466:
912:
823:
402:
50:
1495:
756:
131:
The most popular precursors for deposition of elemental solids are
264:
49:
41:
1480:
178:
916:
205:
Proximity effects can lead to unintended structure broadening
757:"Atomic-Resolution Imaging with a Sub-50-pm Electron Probe"
755:
Erni, Rolf; Rossell, MD; Kisielowski, C; Dahmen, U (2009).
593:
Critical
Reviews of Solid State and Materials Sciences
283:
Snapshots of growing a doll-like nanostructure by IBID
1509:
1458:
1367:
1360:
1227:
1171:
1133:
1090:
1083:
1037:
986:
950:
1342:Serial block-face scanning electron microscopy
1045:Detectors for transmission electron microscopy
928:
8:
66:(STEM) is commonly used. Another method is
1364:
1087:
935:
921:
913:
731:
674:
483:
465:
370:Scanning transmission electron microscopy
64:scanning transmission electron microscope
845:
843:
841:
393:
273:
28:Electron-beam-induced deposition (EBID)
505:
503:
636:
634:
632:
630:
7:
1581:
586:
584:
582:
580:
578:
576:
512:Semiconductor Science and Technology
25:
978:Timeline of microscope technology
1580:
1569:
1568:
375:Transmission electron microscopy
320:
304:
288:
276:
18:Electron beam induced deposition
1337:Precession electron diffraction
58:The focused electron beam of a
781:10.1103/PhysRevLett.102.096101
698:M. Song and K. Furuya (2008).
1:
724:10.1088/1468-6996/9/2/023002
667:10.1088/1468-6996/9/1/014110
365:Scanning electron microscope
236:The advantages of IBID are:
60:scanning electron microscope
32:scanning electron microscope
532:10.1088/0268-1242/17/10/311
240:Much higher deposition rate
210:Ion-beam-induced deposition
68:ion-beam-induced deposition
1635:
1322:Immune electron microscopy
1240:Annular dark-field imaging
1055:Everhart–Thornley detector
46:Scheme of the EBID process
1564:
1476:Hitachi High-Technologies
873:10.1016/j.tsf.2007.02.029
613:10.1080/10408430600930438
270:Superconducting nanowires
263:Nanoloops (potential nano
1501:Thermo Fisher Scientific
1327:Geometric phase analysis
1215:Aberration-Corrected TEM
704:Sci. Technol. Adv. Mater
647:Sci. Technol. Adv. Mater
360:Organometallic chemistry
108:Materials and precursors
1250:Charge contrast imaging
1060:Field electron emission
761:Physical Review Letters
567:10.1002/pssa.2211510112
547:Physica Status Solidi A
228:Deposition occurs in a
1440:Thomas Eugene Everhart
327:Letter Φ grown by EBID
55:
47:
1445:Vernon Ellis Cosslett
1265:Dark-field microscopy
313:Leaning Tower of Pisa
257:World smallest magnet
53:
45:
1450:Vladimir K. Zworykin
1100:Correlative light EM
1009:Electron diffraction
187:electron diffraction
90:Deposition mechanism
1614:Electron microscopy
1415:Manfred von Ardenne
1400:Gerasimos Danilatos
1307:Electron tomography
1302:Electron holography
1245:Cathodoluminescence
1024:Secondary electrons
1014:Electron scattering
958:Electron microscopy
944:Electron microscopy
865:2007TSF...515.6791L
816:2005NanoL...5.1303V
773:2009PhRvL.102i6101E
716:2008STAdM...9b3002S
659:2008STAdM...9a4110F
605:2006CRSSM..31...55R
559:1995PSSAR.151..107N
524:2002SeScT..17.1096K
458:2023Mate...16.5808M
419:10.1557/mrc.2018.77
340:Electron microscopy
1537:Digital Micrograph
1143:Environmental SEM
1065:Field emission gun
1029:X-ray fluorescence
641:K. Furuya (2008).
467:10.3390/ma16175808
407:MRS Communications
381:Lisa McElwee-White
379:Researcher :
99:Spatial resolution
56:
48:
1596:
1595:
1560:
1559:
1430:Nestor J. Zaluzec
1425:Maximilian Haider
1223:
1222:
903:978-981-270-076-6
824:10.1021/nl050522i
260:Fractal nanotrees
16:(Redirected from
1626:
1584:
1583:
1572:
1571:
1380:Bodo von Borries
1365:
1125:Photoemission EM
1088:
937:
930:
923:
914:
877:
876:
853:Thin Solid Films
847:
836:
835:
799:
793:
792:
752:
746:
745:
735:
695:
689:
688:
678:
638:
625:
624:
588:
571:
570:
542:
536:
535:
507:
498:
497:
487:
469:
437:
431:
430:
398:
345:Focused ion beam
324:
308:
292:
280:
230:focused ion beam
216:focused ion beam
72:focused ion beam
70:(IBID), where a
21:
1634:
1633:
1629:
1628:
1627:
1625:
1624:
1623:
1599:
1598:
1597:
1592:
1556:
1505:
1454:
1435:Ondrej Krivanek
1356:
1219:
1167:
1129:
1115:Liquid-Phase EM
1079:
1038:Instrumentation
1033:
991:
982:
946:
941:
886:
881:
880:
849:
848:
839:
801:
800:
796:
754:
753:
749:
697:
696:
692:
640:
639:
628:
590:
589:
574:
544:
543:
539:
509:
508:
501:
439:
438:
434:
400:
399:
395:
390:
385:
335:
328:
325:
316:
309:
300:
293:
284:
281:
250:
212:
196:
164:
157:
153:
148:
138:
133:metal carbonyls
127:
123:
119:
115:
110:
101:
92:
40:
23:
22:
15:
12:
11:
5:
1632:
1630:
1622:
1621:
1619:Nanotechnology
1616:
1611:
1601:
1600:
1594:
1593:
1591:
1590:
1578:
1565:
1562:
1561:
1558:
1557:
1555:
1554:
1549:
1544:
1542:Direct methods
1539:
1534:
1529:
1524:
1519:
1513:
1511:
1507:
1506:
1504:
1503:
1498:
1493:
1488:
1483:
1478:
1473:
1468:
1462:
1460:
1456:
1455:
1453:
1452:
1447:
1442:
1437:
1432:
1427:
1422:
1417:
1412:
1407:
1402:
1397:
1392:
1390:Ernst G. Bauer
1387:
1382:
1377:
1371:
1369:
1362:
1358:
1357:
1355:
1354:
1349:
1344:
1339:
1334:
1329:
1324:
1319:
1314:
1309:
1304:
1299:
1294:
1289:
1284:
1283:
1282:
1272:
1267:
1262:
1257:
1252:
1247:
1242:
1237:
1231:
1229:
1225:
1224:
1221:
1220:
1218:
1217:
1212:
1211:
1210:
1200:
1195:
1190:
1189:
1188:
1177:
1175:
1169:
1168:
1166:
1165:
1160:
1155:
1150:
1145:
1139:
1137:
1131:
1130:
1128:
1127:
1122:
1117:
1112:
1107:
1102:
1096:
1094:
1085:
1081:
1080:
1078:
1077:
1072:
1067:
1062:
1057:
1052:
1047:
1041:
1039:
1035:
1034:
1032:
1031:
1026:
1021:
1016:
1011:
1006:
1004:Bremsstrahlung
1001:
995:
993:
984:
983:
981:
980:
975:
970:
965:
960:
954:
952:
948:
947:
942:
940:
939:
932:
925:
917:
911:
910:
905:
885:
884:External links
882:
879:
878:
837:
794:
747:
690:
626:
572:
553:(1): 107–112.
537:
499:
432:
413:(2): 343–357.
392:
391:
389:
386:
384:
383:
377:
372:
367:
362:
357:
352:
350:Metal carbonyl
347:
342:
336:
334:
331:
330:
329:
326:
319:
317:
310:
303:
301:
294:
287:
285:
282:
275:
272:
271:
268:
261:
258:
249:
246:
245:
244:
241:
234:
233:
226:
223:
211:
208:
207:
206:
203:
200:
195:
192:
191:
190:
171:
168:
163:
160:
155:
151:
146:
136:
125:
121:
117:
113:
109:
106:
100:
97:
91:
88:
39:
36:
24:
14:
13:
10:
9:
6:
4:
3:
2:
1631:
1620:
1617:
1615:
1612:
1610:
1609:Electron beam
1607:
1606:
1604:
1589:
1588:
1579:
1577:
1576:
1567:
1566:
1563:
1553:
1550:
1548:
1545:
1543:
1540:
1538:
1535:
1533:
1530:
1528:
1525:
1523:
1520:
1518:
1515:
1514:
1512:
1508:
1502:
1499:
1497:
1494:
1492:
1489:
1487:
1484:
1482:
1479:
1477:
1474:
1472:
1469:
1467:
1466:Carl Zeiss AG
1464:
1463:
1461:
1459:Manufacturers
1457:
1451:
1448:
1446:
1443:
1441:
1438:
1436:
1433:
1431:
1428:
1426:
1423:
1421:
1418:
1416:
1413:
1411:
1410:James Hillier
1408:
1406:
1403:
1401:
1398:
1396:
1393:
1391:
1388:
1386:
1383:
1381:
1378:
1376:
1373:
1372:
1370:
1366:
1363:
1359:
1353:
1350:
1348:
1345:
1343:
1340:
1338:
1335:
1333:
1330:
1328:
1325:
1323:
1320:
1318:
1315:
1313:
1310:
1308:
1305:
1303:
1300:
1298:
1295:
1293:
1290:
1288:
1285:
1281:
1278:
1277:
1276:
1273:
1271:
1268:
1266:
1263:
1261:
1258:
1256:
1253:
1251:
1248:
1246:
1243:
1241:
1238:
1236:
1233:
1232:
1230:
1226:
1216:
1213:
1209:
1206:
1205:
1204:
1201:
1199:
1196:
1194:
1191:
1187:
1184:
1183:
1182:
1179:
1178:
1176:
1174:
1170:
1164:
1163:Ultrafast SEM
1161:
1159:
1156:
1154:
1151:
1149:
1146:
1144:
1141:
1140:
1138:
1136:
1132:
1126:
1123:
1121:
1120:Low-energy EM
1118:
1116:
1113:
1111:
1108:
1106:
1103:
1101:
1098:
1097:
1095:
1093:
1089:
1086:
1082:
1076:
1073:
1071:
1070:Magnetic lens
1068:
1066:
1063:
1061:
1058:
1056:
1053:
1051:
1048:
1046:
1043:
1042:
1040:
1036:
1030:
1027:
1025:
1022:
1020:
1019:Kikuchi lines
1017:
1015:
1012:
1010:
1007:
1005:
1002:
1000:
997:
996:
994:
989:
985:
979:
976:
974:
971:
969:
966:
964:
961:
959:
956:
955:
953:
949:
945:
938:
933:
931:
926:
924:
919:
918:
915:
909:
906:
904:
900:
896:
895:981-270-076-5
892:
888:
887:
883:
874:
870:
866:
862:
858:
854:
846:
844:
842:
838:
833:
829:
825:
821:
817:
813:
810:(7): 1303–7.
809:
805:
798:
795:
790:
786:
782:
778:
774:
770:
767:(9): 096101.
766:
762:
758:
751:
748:
743:
739:
734:
729:
725:
721:
717:
713:
710:(2): 023002.
709:
705:
701:
694:
691:
686:
682:
677:
672:
668:
664:
660:
656:
653:(1): 014110.
652:
648:
644:
637:
635:
633:
631:
627:
622:
618:
614:
610:
606:
602:
598:
594:
587:
585:
583:
581:
579:
577:
573:
568:
564:
560:
556:
552:
548:
541:
538:
533:
529:
525:
521:
517:
513:
506:
504:
500:
495:
491:
486:
481:
477:
473:
468:
463:
459:
455:
451:
447:
443:
436:
433:
428:
424:
420:
416:
412:
408:
404:
397:
394:
387:
382:
378:
376:
373:
371:
368:
366:
363:
361:
358:
356:
353:
351:
348:
346:
343:
341:
338:
337:
332:
323:
318:
315:grown by IBID
314:
307:
302:
299:grown by IBID
298:
297:bacteriophage
291:
286:
279:
274:
269:
266:
262:
259:
256:
255:
254:
247:
243:Higher purity
242:
239:
238:
237:
231:
227:
224:
221:
220:
219:
217:
209:
204:
201:
198:
197:
194:Disadvantages
193:
188:
184:
180:
176:
172:
169:
166:
165:
161:
159:
149:
142:
139:structure or
134:
129:
107:
105:
98:
96:
89:
87:
83:
79:
77:
73:
69:
65:
61:
52:
44:
37:
35:
33:
29:
19:
1585:
1573:
1527:EM Data Bank
1491:Nion Company
1385:Dennis Gabor
1375:Albert Crewe
1153:Confocal SEM
1050:Electron gun
999:Auger effect
859:(17): 6791.
856:
852:
807:
804:Nano Letters
803:
797:
764:
760:
750:
707:
703:
693:
650:
646:
596:
592:
550:
546:
540:
518:(10): 1096.
515:
511:
452:(17): 5808.
449:
445:
435:
410:
406:
396:
251:
235:
213:
141:metallocenes
130:
111:
102:
93:
84:
80:
57:
27:
26:
1471:FEI Company
1405:Harald Rose
1395:Ernst Ruska
1084:Microscopes
992:with matter
990:interaction
355:Metallocene
311:A model of
295:A model of
76:sublimation
1603:Categories
1552:Multislice
1368:Developers
1228:Techniques
973:Microscope
968:Micrograph
388:References
162:Advantages
54:EBID setup
1420:Max Knoll
1075:Stigmator
599:(3): 55.
476:1996-1944
446:Materials
427:2159-6867
158:for GaN.
135:of Me(CO)
62:(SEM) or
1575:Category
1522:CrysTBox
1510:Software
1181:Cryo-TEM
988:Electron
832:16178228
789:19392535
742:27877950
685:27877936
621:93769658
494:37687502
485:10488958
333:See also
1587:Commons
1235:4D STEM
1208:4D STEM
1186:Cryo-ET
1158:SEM-XRF
1148:CryoSEM
1105:Cryo-EM
963:History
861:Bibcode
812:Bibcode
769:Bibcode
733:5099707
712:Bibcode
676:5099805
655:Bibcode
601:Bibcode
555:Bibcode
520:Bibcode
454:Bibcode
267:device)
38:Process
1532:EMsoft
1517:CASINO
1496:TESCAN
1361:Others
1260:cryoEM
951:Basics
901:
893:
830:
787:
740:
730:
683:
673:
619:
492:
482:
474:
425:
248:Shapes
1486:Leica
1332:PINEM
1198:HRTEM
1193:EFTEM
617:S2CID
265:SQUID
124:, TiO
120:, SiO
1547:IUCr
1481:JEOL
1352:WBDF
1347:WDXS
1297:EBIC
1292:EELS
1287:ECCI
1275:EBSD
1255:CBED
1203:STEM
899:ISBN
891:ISBN
828:PMID
785:PMID
738:PMID
681:PMID
490:PMID
472:ISSN
423:ISSN
179:EELS
1317:FEM
1312:FIB
1280:TKD
1270:EDS
1173:TEM
1135:SEM
1110:EMP
869:doi
857:515
820:doi
777:doi
765:102
728:PMC
720:doi
671:PMC
663:doi
609:doi
563:doi
551:151
528:doi
480:PMC
462:doi
415:doi
183:EDS
175:TEM
154:GaN
1605::
1092:EM
897:,
867:.
855:.
840:^
826:.
818:.
806:.
783:.
775:.
763:.
759:.
736:.
726:.
718:.
706:.
702:.
679:.
669:.
661:.
649:.
645:.
629:^
615:.
607:.
597:31
595:.
575:^
561:.
549:.
526:.
516:17
514:.
502:^
488:.
478:.
470:.
460:.
450:16
448:.
444:.
421:.
409:.
405:.
185:,
181:,
177:,
145:WF
936:e
929:t
922:v
875:.
871::
863::
834:.
822::
814::
808:5
791:.
779::
771::
744:.
722::
714::
708:9
687:.
665::
657::
651:9
623:.
611::
603::
569:.
565::
557::
534:.
530::
522::
496:.
464::
456::
429:.
417::
411:8
156:3
152:2
147:6
137:x
126:x
122:x
118:4
116:N
114:3
20:)
Text is available under the Creative Commons Attribution-ShareAlike License. Additional terms may apply.
