510:(i.e., two dimensional electron systems) of polar semiconductors is strongly enhanced for incident laser frequencies at energy gaps where the direct optical interband transitions involve carrier-occupied states in either the conduction or valence band. This insight and further work led to their formulation of the mechanisms underlying the inelastic light scattering by charge carriers in 2-dimensional plasmas, as well as the specific nature of the coupled LO phonon-intersubband excitation modes of polar semiconductors. Burstein and his graduate students carried out theoretical and experimental investigations of the nonlinear optical response of noble metal surfaces (three-wave mixing and second harmonic generation), interpreting the resonant three-wave mixing in terms of three-step electronic processes that involve intrinsic surface states and surface modified continuum states.
494:, and used the measurement of the forward Raman scattering by optical lattice vibration polaritons to determine its low frequency dielectric constant in what has been called the first practical application of polaritons. They also formulated two major mechanisms for surface-enhanced Raman scattering (“SERS”) by molecules adsorbed on metal surfaces: the enhancement of the incident and scattered electromagnetic fields by surface roughness, and the occurrence of intermolecular adsorbed molecule-metal substrate charge-transfer resonance. The inelastic light scattering by single particle excitations at a
532:. The metal-induced fluorescence was attributed to the lowering of the symmetry of the molecules. The metal-induced phosphorescence was attributed to the mixing of the singlet and triplet exciton states of the molecules by the spin-orbit interaction of the molecules with the metal atoms, and to the mixing of the singlet and triplet states by the virtual hopping of electrons between the excited molecules and the metal, both new mechanisms for turning on the phosphorescence of molecules.
25:
911:"Investigations of Cyclotron Resonance in InSb and PbTe: Intraband Transitions between Landau Levels," Elias Burstein in The Symposium of the 50th Anniversary of Cyclotron Resonance in Semiconductors of the 27th International Conference on the Physics of Semiconductors, Flagstaff, AZ edited by Jose Menendez and Chris G. Van de Walle, American Institute of Physics, 2005, p. 17-22.
88:
354:
463:) scattering phenomena and the conditions for their observation. He and his students observed that an applied electric field induced normally forbidden infrared absorption by long wavelength optical lattice vibrations in diamond structure crystals. This phenomenon was attributed to the creation of an oscillating electric moment that couples to the
486:
at interfaces on semiconductor surfaces which specified the conditions for observing that phenomenon and explained why backward scattering had never been observed; the cross-section for backward scattering is orders of magnitude smaller than that for forward scattering. They measured Raman scattering
458:
At the
University of Pennsylvania, Burstein and his graduate students continued ground-breaking research on semiconductors, insulators, metals, and two-dimensional electron plasmas in semiconductors, contributing to the understanding of the optical behavior of solid state materials. Burstein was one
254:
physicist whose active career in science spanned seven decades. He is known for his pioneering fundamental research in the optical physics of solids; for writing and editing hundreds of articles and other publications; for bringing together scientists from around the world in international meetings,
397:
Burstein along with Robert Hughes of the chemistry department and Robert Madden of the metallurgy department (both at the
University of Pennsylvania), were the principal originators of the proposal to establish a laboratory for fundamental research on materials at the university. This led to the
636:
Burstein was born
September 30, 1917, in Brooklyn, New York, to Russian-born Jewish parents Samuel Burstein (1890-1950) and Sara Plotkin (1896-1985). He married Rena Ruth Benson on September 19, 1943. He is the father of three daughters (Joanna, Sandra, and Miriam), and has two grandchildren.
446:. In later work at NRL, Burstein and his collaborators used low temperature absorption spectra to study the excited states of shallow impurities in silicon and detected deviations from the existing theoretical models. In other work, they investigated interband magneto-optical transitions in
1070:“Role of Surface Electronic Transitions in Linear and Nonlinear electromagnetic Phenomena at Noble Metal Surfaces: Beyond Jellium”, M.Y. Jiang, G. Pajer and E.Burstein, Proc. Yamada Conf. on "The Surface as a New Material", Japan, July, 1990, Surface Science, 242, 306 (1991).
599:(1986) "for his pioneering work on the optical properties of semiconductors and insulators, particularly extrinsic photoconductivity, the anomalous band-edge optical absorption shift (Burstein shift), magneto-optical effects in semiconductors, and infrared and Raman processes"
382:) and its editor-in-chief (1963–92). In that capacity he was instrumental in establishing its editorial and publication policies, including granting each editor on its International Board of Editors full authority to accept or reject contributions. He has been co-editor of
1088:“Metal Proximity-induced Phosphorescence of C60 Molecules”, Igor Yurchenko, E. Burstein, Dung-Hai Lee and V, Krotov, Proc. SPIE 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997, 202 (April 20, 1998).
454:
of electrons in InSb at room temperature at frequencies in the infrared, and explained this quantum mechanically as corresponding to intraband optical transitions between discrete Landau levels within the valence or conduction bands.
414:(NRL) elucidated their infrared properties, explaining the mechanisms of second-order infrared absorption by long wavelength lattice vibrations in terms of electrical and mechanical anharmonicity. His fundamental studies of infrared
1079:“The dependence of the symmetry (spin) forbidden photoluminescence of C60 molecules on their proximity to metals”, Igor Yurchenko, Elias Burstein, Zoya Kazantseva, William Romanow and Larry Brard, Ultramicroscopy 61, 259 (1995)
960:“Resonance-Enhanced Electric Field Induced Raman Scattering by LO Phonons inInSb”, A. Pinczuk and E.Burstein, Proc. 1968 Int. Conf. on Light Scattering Spectra of Solids (Springer-Verlag, New York, 1969), p. 429.
369:. He also initiated and organized many international conferences, bringing together physicists from all over the globe to share the results of their research and theoretical work, and to confer with each other.
291:
Burstein was a member of the physics section of the crystal branch at the U.S. Naval
Research Laboratory (1945–58), later head of that branch (1948-1958), and thereafter head of the semiconductors branch (1958).
1325:
575:
Election to the
National Academy of Sciences (1979) "in recognition of outstanding contributions in condensed matter physics and, in particular, his pioneering studies of optical properties of semiconductors."
1052:“Inelastic light Scattering by the two-dimensional electron gas: fractional quantum Hall regime and beyond”. A. Pinczuk, B.S. Dennis, L.N. Pheiffer, K.W. West and E.Burstein, Phil Mag. B70, 429 (1994).
569:
Annual Award of the
Washington Academy of Sciences (1957) "in recognition of his distinguished study of impurity levels and effective mass in semiconductors" (awarded to persons under 40 years of age).
553:"Confined Electrons and Photons: New Physics and Applications," The Volume of Lectures of NATO Advanced Summer School, Erice, Italy, edited by E. Burstein and C. Weisbuch (Plenum Press, London 1995).
1154:
1200:
361:
During his career
Burstein trained more than thirty-five PhD students in physics as well as five postdoctoral research associates. He published over 200 papers and has two patents for
854:"Absorption Spectra of Impurities in Silicon-I. Group-III Acceptors," E. Burstein, G.S. Picus, B. Henvis and R. F. Wallis, Journal of the Physics and Chemistry of Solids 1, 65 (1956).
582:
of the
Franklin Institute (1979) "in recognition of the outstanding contributions to the science of optical properties of solids and its application to photoconductive technology"
550:
Inelastic Light
Scattering: Proceedings of the 1979 US-Japan Seminar held at Santa Monica California, 1979, edited by E. Burstein and H. Kawamura. (Pergamon Press, New York, 1980)
1350:
1061:“Resonant Inelastic Light Scattering by Electronic Excitations in 2D Semiconductor Plasmas”, E. Burstein, M.Y. Jiang and A. Pinczuk, Annales de Physique Colloque C2, 191 (1995).
1032:“Resonant Light Scattering by Single-Particle Electronic Excitations in n-GaAs”, A.Pinczuk, L. Brillson, E. Burstein and E. Anastassakis, Physical Review Letters 27, 317 (1971).
459:
of the first to use lasers to do fundamental research on semiconductors and insulators, and he played an integral role in determining the mechanisms underlying inelastic light (
426:
silicon and germanium infrared detectors. The 1954 paper that has become his most-cited publication explained an "anomalous shift" of the interband optical absorption edge of
624:
920:“A Method for Determining the Magnitude of the Raman Scattering Matrix Element for Diamond-Type Crystals”, E.Burstein and S. Ganesan, Le Journal de Physique 26, 637 (1965).
1041:“Resonant Inelastic light Scattering by Charge Carriers at Semiconductor Surfaces”, E. Burstein, A. Pinczuk and S. Buchner, Proc. Int. Conf. on Physics of Semiconductors
1014:"Giant" Raman Scattering by Adsorbed Molecules on Metal Surfaces”, Burstein, Y.J. Chen, C.Y. Chen, S. Lundqvist and E. Tosatti, Solid State Communications 29, 567 (1979).
471:
in inducing an otherwise forbidden Raman scattering by longitudinal optical vibration modes in InSb. This phenomenon was used as a spectroscopic probe of band-bending at
1345:
592:
863:"Absorption Spectra of Impurities in Silicon-II. Group-V Donors," G.S. Picus, E. Burstein and B. Henvis, Journal of the Physics and Chemistry of Solids 10, 75 (1956).
1355:
938:“Electric Field Induced Infrared Absorption and Raman Scattering by Optical Phonons in Centrosymmetric Crystals”, E. Burstein, A.A. Maradudin, E. Anastassakisand
303:
as Mary Amanda Wood
Professor of Physics. He retired as a member of the standing faculty in 1988, but has remained active as Mary Amanda Wood Professor Emeritus.
1360:
1291:
James M. Kikkawa, Eugene Mele, Aron Pinczuk, Erio Tosatti, and Arjun G. Yodh, "Elias Burstein", Biographical Memoirs of the National Academy of Sciences (2019)
544:
Enrico Fermi Summer School Course LII on “Atomic Structure and Properties of Solids”, edited by E. Burstein and F. Bassani (Academic Press Inc, New York, 1972)
506:
energy gap of n-GaAs. Burstein and co-workers pointed out that the cross-section for light scattering by single particle excitations in inversion layers and
1340:
1335:
1365:
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386:(Gordon and Breach) (1971-1981), and is Founding Editor and Co-Editor with Marvin Cohen, Douglas Mills, and Phillip J. Stiles of the series of volumes
1315:
1238:
819:“Infrared Photoconductivity Due to Neutral Impurities in Germanium”, E. Burstein, J.W. Davisson, E.E. Bell, W.J. Turner and H.G. Lipson, Phys. Rev.
334:
450:, and formulated the theory of the phenomenon in terms of interband transitions between Landau subbands. They also reported the first observation of
411:
406:
Burstein's pioneering scientific achievements have had a major impact on the understanding of fundamental optical phenomena that are exhibited by
280:
1207:
1140:
929:“Electric-Field Induced Infrared Absorption and Raman Scattering in Diamond”, E. Anastassakis and E. Burstein, Phys. Rev. B vol 2, 1952 (1970).
885:“Zeeman Type Magneto-Optic Studies of Interband Transitions in Semiconductors”, E. Burstein, G.S. Picus, R.F. Wallis and F. Blatt, Phys. Rev.
951:“Raman Scattering from InSb Surfaces at Photon Energies Near the E1 Energy Gap”, A. Pinczuk and E. Burstein, Phys. Rev. Lett. 21, 1073 (1968).
272:
664:
1330:
978:“Surface Electric Field Induced Raman Scattering in PbTe and SnTe”, L. Brillson and E. Burstein, Physical Review Letters 27, 808 (1971).
1266:
987:“Raman Scattering at the (111) and (111) Surfaces of n- and p-InAs”, S. Buchner, L.Y. Ching and E. Burstein, Phys. Rev. 14, 4459 (1976).
969:“Resonant Raman Scattering at the E1 Energy Gap of Semiconductor Crystals”, A.Pinczuk and E. Burstein, Surface Science 37, 153 (1973).
327:
276:
1370:
319:
63:
797:
Infrared Lattice Absorption in Ionic and Homopolar Crystals,” Melvin Lax and Elias Burstein, Physical Review vol 97 no 1, 39 (1955)
1320:
307:
1023:“Giant Raman Scattering by Molecules at Metal-Island Films”, C.Y. Chen and E. Burstein, Physical Review Letters 45, 1287 (1980).
898:“Cyclotron Resonance at Infrared Frequencies in InSb at Room Temperature”, E. Burstein, G.S. Picus and H.A. Gebbie, Phys. Rev.
41:
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757:
311:
210:
34:
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806:“Infrared Photoconductivity Due to Neutral Impurities in Silicon”, E. Burstein, J.J. Oberly and J.W. Davisson, Phys. Rev.
566:
Brooklyn College Chemistry Department Gold Medal (1938) for "outstanding record as an undergraduate student in chemistry."
521:(“buckyballs”) in close proximity to a smooth metal surface exhibit normally forbidden modes of luminescence –– a singlet
451:
443:
338:
1005:“The Raman Spectrum of BaTiO3”, A. Pinczuk, W. Taylor, E. Burstein and I. Lefkowitz, Solid State Comm. 5, 429 (1967).
467:
radiation. Further work lead to the investigation of the role of surface space charge electric fields and associated
398:
founding of the Laboratory for Research on the Structure of Matter (LRSM) at the University of Pennsylvania in 1961.
547:
Proceedings of Conference on “Polaritons”, edited by E. Burstein and F. De Martini, (Pergamon Press, New York 1974).
579:
422:
of impurities in silicon and germanium at liquid helium temperature provided the foundation for the development of
374:
296:
214:
174:
845:"Optical Properties of Indium Antimonide". Physical Review, vol.91, no.6, 1561.Tannenbaum, M; Briggs, H.B. (1953).
572:
Alumni Award of Honor of Brooklyn College (1960) "for major experimental achievements as a solid state physicist."
596:
439:
996:"Raman Scattering by Surface Polaritons," Y.J. Chen, E. Burstein and D.L. Mills, Phys. Rev. Lett. 34,1516 (1975)
692:“A Tribute to Elias Burstein.” Gerald Burns, Solid State Communications volume 58, no. 1, pp ix-x. (April 1986)
407:
251:
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in Washington, DC. Although he did not earn a PhD degree, he received four honorary doctorates (see Honors).
641:
132:
1098:
423:
362:
341:(1971–80) and served as its Chairman (1976–78). He was a member of the Arts and Sciences Committee of the
300:
613:
605:
Honorary Doctor of Technology degree from Chalmers University of Technology in Gothenburg, Sweden (1981)
585:
464:
410:. His early work with diamond-structure crystals and with rock salt and zincblende type crystals at the
228:
784:“The Infrared Properties of Diamond, Silicon and Germanium”, E. Burstein and J.J. Oberly, Phys. Rev.
541:“Tunneling Phenomena in Solids”, edited by E. Burstein and S. Lundqvist, (Plenum Press, New York 1969)
1310:
1305:
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Among his numerous professional roles, he was a member of the Solid State Sciences Committee of the
620:
315:
181:
45:
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668:
342:
279:(1946–48). His doctoral studies were interrupted by the war in 1945, when he went to work at the
1112:
427:
415:
739:
722:; Muenzel, Frauke (December 2017). "Editorial: Obituary of Founding Editor Elias Burstein".
609:
495:
460:
323:
264:
151:
233:
872:“Interband Magneto-Optic Effect in Semiconductors”, E. Burstein and G.S. Picus, Phys. Rev.
529:
488:
482:
Burstein and his collaborators also gave a theoretical formulation of Raman scattering by
419:
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conferences, and symposia; and for training and mentoring dozens of younger physicists.
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379:
1299:
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surfaces and to determine the dependence of the band-bending on surface orientation.
447:
366:
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It may require cleanup to comply with Knowledge's content policies, particularly
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Honorary Doctor of Science degrees from Brooklyn College, New York (1985), from
435:
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1978, Edit. by B.L.H. Wilson (The Institute of Physics, London, 1979), p. 1231.
743:
705:
514:
483:
87:
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In the later part of his career, Burstein and collaborators discovered that
431:
318:
in Italy (1974); was the Fiftieth Anniversary Jubilee Visiting Professor at
353:
391:
113:
250:(September 30, 1917 – June 17, 2017) was an American experimental
832:“Anomalous Optical Absorption Limit in InSb”, E. Burstein, Phys. Rev.
522:
498:
surface was successfully observed using laser frequencies near the E
352:
271:(1941). He took graduate courses in chemistry and physics at
18:
771:
1253:"American Association for the Advancement of Science Fellow"
430:
to higher energies that had been reported by researchers at
758:"Contemporary Concepts of Condensed Matter Science series"
1326:
Members of the United States National Academy of Sciences
1141:"1986 Frank Isakson Prize for Optical Effects in Solids"
772:"The Laboratory for Research on the Structure of Matter"
602:
Von Humboldt US Senior Scientist Award (1988–90,1991–92)
619:
Fellow of the American Physical Society (1965), of the
442:
forbids transitions to carrier-occupied states in the
33:
A major contributor to this article appears to have a
295:
In 1958 he was appointed professor of physics at the
1155:"Chalmers Institute of Technology Honorary degrees"
625:
American Association for the Advancement of Science
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562:Burstein received a number of honors, including:
388:Contemporary Concepts of Condensed Matter Science
434:. The shift results from the conservation of
267:(1938) and an MA degree in chemistry from the
263:Burstein earned a BA degree in chemistry from
8:
1351:Massachusetts Institute of Technology alumni
438:in optical interband transitions when the
299:, and in 1982 he succeeded Nobel Laureate
86:
75:
1113:"National Academy of Sciences membership"
64:Learn how and when to remove this message
1346:Fellows of the American Physical Society
1225:"Ohio State University honorary degree"
1099:"Washington Academy of Sciences awards"
942:, Helvetia Physica Acta, 41 730 (1968).
656:
306:He held visiting professorships at the
402:Principal areas of scientific research
322:in Gothenburg, Sweden (1981); and was
1356:Catholic University of America alumni
1201:"Emory University Honorary doctorate"
1181:"Brooklyn College Honorary doctorate"
165:research in optical physics of solids
7:
1361:American condensed matter physicists
700:
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384:Comments on Condensed Matter Physics
326:in the department of physics at the
640:Burstein died on June 17, 2017, in
1341:American people of Russian descent
1336:University of Pennsylvania faculty
1239:"American Physical Society Fellow"
328:University of California, Berkeley
324:Miller Visiting Research Professor
14:
1366:American academic journal editors
487:by the "soft" optical phonons in
320:Chalmers University of Technology
1316:20th-century American physicists
1179:Gutis, Philip S. (5 June 1985).
586:Guggenheim Foundation Fellowship
308:University of California, Irvine
44:. Please discuss further on the
23:
365:silicon and germanium infrared
372:He was the founding editor of
211:U.S. Naval Research Laboratory
16:American physicist (1917–2017)
1:
349:Professional accomplishments
339:National Academy of Sciences
275:(1941–43) and in physics at
1331:University of Kansas alumni
1269:. Legacy.com. June 20, 2017
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724:Solid State Communications
621:Optical Society of America
580:John Price Wetherill Medal
444:conduction or valence band
375:Solid State Communications
297:University of Pennsylvania
215:University of Pennsylvania
175:John Price Wetherill Medal
1267:"Elias Burstein obituary"
744:10.1016/j.ssc.2017.09.011
612:, Atlanta GA (1994), and
597:American Physical Society
440:Pauli exclusion principle
412:Naval Research Laboratory
335:National Research Council
314:in Israel (1974), at the
281:Naval Research Laboratory
241:
191:
85:
1371:Scientists from Brooklyn
202:Condensed-matter physics
1321:Brooklyn College alumni
1127:"Guggenheim Fellowship"
133:Bryn Mawr, Pennsylvania
667:. ACAP. Archived from
528:and a triplet exciton
358:
301:John Robert Schrieffer
614:Ohio State University
536:Selected publications
356:
42:neutral point of view
648:, at the age of 99.
616:, Columbus OH (1999)
269:University of Kansas
156:University of Kansas
736:2017SSCom.268...A1P
706:"Infrared detector"
623:(1965), and of the
593:Frank Isakson Prize
515:fullerene molecules
452:cyclotron resonance
316:University of Parma
277:Catholic University
182:Frank Isakson Prize
1186:The New York Times
484:surface polaritons
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345:starting in 1995.
343:Franklin Institute
310:(1967–68), at the
110:September 30, 1917
416:photoconductivity
357:E. Burstein, 2010
312:Hebrew University
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229:Phillip J. Stiles
221:Doctoral students
193:Scientific career
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129:(aged 99)
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1161:on 2014-08-27
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901:
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720:Pinczuk, Aron
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125:June 17, 2017
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1271:. Retrieved
1261:
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1208:the original
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1163:. Retrieved
1159:the original
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899:
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889:, 15 (1959).
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828:
823:, 65 (1954).
820:
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673:. Retrieved
669:the original
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646:Pennsylvania
639:
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526:fluorescence
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469:band-bending
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225:Aron Pinczuk
207:Institutions
192:
127:(2017-06-17)
60:
54:January 2016
51:
32:
1311:2017 deaths
1306:1917 births
675:22 November
436:wave vector
418:due to the
232: [
140:Nationality
1300:Categories
1165:2015-09-20
940:A. Pinczuk
652:References
116:, New York
106:1917-09-30
730:: A1–A2.
642:Bryn Mawr
432:Bell Labs
287:Positions
259:Education
46:talk page
1273:June 20,
632:Personal
392:Elsevier
330:(1996).
143:American
114:Brooklyn
732:Bibcode
595:of the
523:exciton
337:of the
627:(2002)
588:(1980)
558:Honors
199:Fields
185:(1986)
178:(1979)
170:Awards
1211:(PDF)
1204:(PDF)
489:BaTiO
461:Raman
236:]
1275:2016
677:2015
591:The
578:The
496:GaAs
477:SnSe
475:and
473:PbTe
428:InSb
122:Died
100:Born
900:103
887:113
874:105
740:doi
728:268
502:+ Δ
273:MIT
1302::
1183:.
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697:^
685:^
644:,
519:60
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234:de
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517:C
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378:(
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61:(
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52:(
48:.
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