291:. Bardeen then decided to make use of an inversion layer instead of the very thin layer of semiconductor which Shockley had envisioned in his FET designs. Based on his theory, in 1948 Bardeen patented the progenitor of MOSFET, an insulated-gate FET (IGFET) with an inversion layer. The inversion layer confines the flow of minority carriers, increasing modulation and conductivity, although its electron transport depends on the gate's insulator or quality of oxide if used as an insulator, deposited above the inversion layer. Bardeen's patent as well as the concept of an inversion layer forms the basis of CMOS technology today. In 1976 Shockley described Bardeen's surface state hypothesis "as one of the most significant research ideas in the semiconductor program".
408:
665:
the source terminal towards the drain terminal is influenced by an applied voltage. The body simply refers to the bulk of the semiconductor in which the gate, source and drain lie. Usually the body terminal is connected to the highest or lowest voltage within the circuit, depending on the type of the FET. The body terminal and the source terminal are sometimes connected together since the source is often connected to the highest or lowest voltage within the circuit, although there are several uses of FETs which do not have such a configuration, such as
149:
3687:
3723:
813:. Any increase of the drain-to-source voltage will increase the distance from drain to the pinch-off point, increasing the resistance of the depletion region in proportion to the drain-to-source voltage applied. This proportional change causes the drain-to-source current to remain relatively fixed, independent of changes to the drain-to-source voltage, quite unlike its ohmic behavior in the linear mode of operation. Thus, in saturation mode, the FET behaves as a
694:
686:
40:
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stray inductances and generate significant voltages that can couple to the gate and cause unintentional switching. FET circuits can therefore require very careful layout and can involve trades between switching speed and power dissipation. There is also a trade-off between voltage rating and "on" resistance, so high-voltage FETs have a relatively high "on" resistance and hence conduction losses.
1306:
586:
883:
713:
728:) from the source to drain by affecting the size and shape of a "conductive channel" created and influenced by voltage (or lack of voltage) applied across the gate and source terminals. (For simplicity, this discussion assumes that the body and source are connected.) This conductive channel is the "stream" through which electrons flow from source to drain.
295:
poor. Bardeen went further and suggested to rather focus on the conductivity of the inversion layer. Further experiments led them to replace electrolyte with a solid oxide layer in the hope of getting better results. Their goal was to penetrate the oxide layer and get to the inversion layer. However, Bardeen suggested they switch from
797:, for a better analogy with bipolar transistor operating regions. The saturation mode, or the region between ohmic and saturation, is used when amplification is needed. The in-between region is sometimes considered to be part of the ohmic or linear region, even where drain current is not approximately linear with drain voltage.
745:
very small current). This is called "pinch-off", and the voltage at which it occurs is called the "pinch-off voltage". Conversely, a positive gate-to-source voltage increases the channel size and allows electrons to flow easily (see right figure, when there is a conduction channel and current is large).
664:
The names of the terminals refer to their functions. The gate terminal may be thought of as controlling the opening and closing of a physical gate. This gate permits electrons to flow through or blocks their passage by creating or eliminating a channel between the source and drain. Electron-flow from
1275:
FETs often have a very low "on" resistance and have a high "off" resistance. However, the intermediate resistances are significant, and so FETs can dissipate large amounts of power while switching. Thus, efficiency can put a premium on switching quickly, but this can cause transients that can excite
929:
or a p-type semiconductor. The drain and source may be doped of opposite type to the channel, in the case of enhancement mode FETs, or doped of similar type to the channel as in depletion mode FETs. Field-effect transistors are also distinguished by the method of insulation between channel and gate.
808:
exists in the p-type body, surrounding the conductive channel and drain and source regions. The electrons which comprise the channel are free to move out of the channel through the depletion region if attracted to the drain by drain-to-source voltage. The depletion region is free of carriers and has
538:
FETs can be majority-charge-carrier devices, in which the current is carried predominantly by majority carriers, or minority-charge-carrier devices, in which the current is mainly due to a flow of minority carriers. The device consists of an active channel through which charge carriers, electrons or
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on the semiconductor surface. Their further work demonstrated how to etch small openings in the oxide layer to diffuse dopants into selected areas of the silicon wafer. In 1957, they published a research paper and patented their technique summarizing their work. The technique they developed is known
1388:
In FETs, electrons can flow in either direction through the channel when operated in the linear mode. The naming convention of drain terminal and source terminal is somewhat arbitrary, as the devices are typically (but not always) built symmetrical from source to drain. This makes FETs suitable for
748:
In an n-channel "enhancement-mode" device, a conductive channel does not exist naturally within the transistor, and a positive gate-to-source voltage is necessary to create one. The positive voltage attracts free-floating electrons within the body towards the gate, forming a conductive channel. But
453:
proposed a silicon MOS transistor in 1959 and successfully demonstrated a working MOS device with their Bell Labs team in 1960. Their team included E. E. LaBate and E. I. Povilonis who fabricated the device; M. O. Thurston, L. A. D’Asaro, and J. R. Ligenza who developed the diffusion processes, and
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to expand in width and encroach on the channel from the sides, narrowing the channel. If the active region expands to completely close the channel, the resistance of the channel from source to drain becomes large, and the FET is effectively turned off like a switch (see right figure, when there is
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Unlike BJTs, the vast majority of FETs are electrically symmetrical. The source and drain terminals can thus be interchanged in practical circuits with no change in operating characteristics or function. This can be confusing when FET's appear to be connected "backwards" in schematic diagrams and
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effects. By 1957 Frosch and
Derrick, using masking and predeposition, were able to manufacture silicon dioxide transistors and showed that silicon dioxide insulated, protected silicon wafers and prevented dopants from diffusing into the wafer. J.R. Ligenza and W.G. Spitzer studied the mechanism of
788:
If drain-to-source voltage is increased, this creates a significant asymmetrical change in the shape of the channel due to a gradient of voltage potential from source to drain. The shape of the inversion region becomes "pinched-off" near the drain end of the channel. If drain-to-source voltage is
784:
For either enhancement- or depletion-mode devices, at drain-to-source voltages much less than gate-to-source voltages, changing the gate voltage will alter the channel resistance, and drain current will be proportional to drain voltage (referenced to source voltage). In this mode the FET operates
465:
integrated circuits. The MOSFET is also capable of handling higher power than the JFET. The MOSFET was the first truly compact transistor that could be miniaturised and mass-produced for a wide range of uses. The MOSFET thus became the most common type of transistor in computers, electronics, and
294:
After
Bardeen's surface state theory the trio tried to overcome the effect of surface states. In late 1947, Robert Gibney and Brattain suggested the use of electrolyte placed between metal and semiconductor to overcome the effects of surface states. Their FET device worked, but amplification was
660:
is the extension of the transistor, in the direction perpendicular to the cross section in the diagram (i.e., into/out of the screen). Typically the width is much larger than the length of the gate. A gate length of 1 ÎĽm limits the upper frequency to about 5 GHz, 0.2 ÎĽm to about
254:
basis, which limited them to a number of specialised applications. The insulated-gate field-effect transistor (IGFET) was theorized as a potential alternative to junction transistors, but researchers were unable to build working IGFETs, largely due to the troublesome surface state barrier that
314:
By the end of the first half of the 1950s, following theoretical and experimental work of
Bardeen, Brattain, Kingston, Morrison and others, it became more clear that there were two types of surface states. Fast surface states were found to be associated with the bulk and a semiconductor/oxide
1007:
technology which are utilized to detect charged molecules; when a charged molecule is present, changes in the electrostatic field at the BioFET surface result in a measurable change in current through the transistor. These include enzyme modified FETs (EnFETs), immunologically modified FETs
1231:
Field-effect transistors have high gate-to-drain current resistance, of the order of 100 MΩ or more, providing a high degree of isolation between control and flow. Because base current noise will increase with shaping time, a FET typically produces less noise than a
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in 1932) and realized that the external field was blocked at the surface because of extra electrons which are drawn to the semiconductor surface. Electrons become trapped in those localized states forming an inversion layer. Bardeen's hypothesis marked the birth of
2085:
1830:
863:; often, OFET gate insulators and electrodes are made of organic materials, as well. Such FETs are manufactured using a variety of materials such as silicon carbide (SiC), gallium arsenide (GaAs), gallium nitride (GaN), and indium gallium arsenide (InGaAs).
1267:
compared to a bipolar junction transistor. MOSFETs are very susceptible to overload voltages, thus requiring special handling during installation. The fragile insulating layer of the MOSFET between the gate and the channel makes it vulnerable to
1292:. If the characteristics of the body diode are not taken into consideration, the FET can experience slow body diode behavior, where a parasitic transistor will turn on and allow high current to be drawn from drain to source when the FET is off.
773:"depletion-mode" device, a positive voltage from gate to body widens the depletion layer by forcing electrons to the gate-insulator/semiconductor interface, leaving exposed a carrier-free region of immobile, positively charged acceptor ions.
1156:
The VeSFET (vertical-slit field-effect transistor) is a square-shaped junctionless FET with a narrow slit connecting the source and drain at opposite corners. Two gates occupy the other corners, and control the current through the
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or MFSFET. Its structure was like that of a modern inversion channel MOSFET, but ferroelectric material was used as a dielectric/insulator instead of oxide. He envisioned it as a form of memory, years before the
963:) is a device for power control. It has a structure akin to a MOSFET coupled with a bipolar-like main conduction channel. These are commonly used for the 200–3000 V drain-to-source voltage range of operation.
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of MOSFET devices. At Bell Labs, the importance of Frosch's technique was immediately realized. Results of their work circulated around Bell Labs in the form of BTL memos before being published in 1957. At
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in some states. This allows extremely low-power switching, which in turn allows greater miniaturization of circuits because heat dissipation needs are reduced compared to other types of switches.
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of the FET. Further gate-to-source voltage increase will attract even more electrons towards the gate which are able to create an active channel from source to drain; this process is called
1057:
The FREDFET (fast-reverse or fast-recovery epitaxial diode FET) is a specialized FET designed to provide a very fast recovery (turn-off) of the body diode, making it convenient for driving
978:
1196:. Due to the 2 dimensional structure of graphene, along with its physical properties, GFETs offer increased sensitivity, and reduced instances of 'false positives' in sensing applications
2962:
Lin, Y.-M.; Valdes-Garcia, A.; Han, S.-J.; Farmer, D. B.; Sun, Y.; Wu, Y.; Dimitrakopoulos, C.; Grill, A; Avouris, P; Jenkins, K. A. (2011). "Wafer-Scale
Graphene Integrated Circuit".
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rather than as a resistor, and can effectively be used as a voltage amplifier. In this case, the gate-to-source voltage determines the level of constant current through the channel.
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compound materials. In the course of trying to understand the mysterious reasons behind their failure to build a working FET, it led to
Bardeen and Brattain instead inventing the
1412:
Source-gated transistors are more robust to manufacturing and environmental issues in large-area electronics such as display screens, but are slower in operation than FETs.
1244:
and satellite receivers. It exhibits no offset voltage at zero drain current and makes an excellent signal chopper. It typically has better thermal stability than a BJT.
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697:
Simulation result for right side: formation of inversion channel (electron density) and left side: current-gate voltage curve (transfer characteristics) in an n-channel
1054:
The DEPFET is a FET formed in a fully depleted substrate and acts as a sensor, amplifier and memory node at the same time. It can be used as an image (photon) sensor.
749:
first, enough electrons must be attracted near the gate to counter the dopant ions added to the body of the FET; this forms a region with no mobile carriers called a
1385:
uses an arrangement where the (usually "enhancement-mode") p-channel MOSFET and n-channel MOSFET are connected in series such that when one is on, the other is off.
1178:) takes advantage of quantum tunneling to greatly increase the speed of transistor operation by eliminating the traditional transistor's area of electron conduction.
3814:
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278:. Shockley independently envisioned the FET concept in 1945, but he was unable to build a working device. The next year Bardeen explained his failure in terms of
1284:
Field-effect transistors are relatively robust, especially when operated within the temperature and electrical limitations defined by the manufacturer (proper
1397:, for example. FET is commonly used as an amplifier. For example, due to its large input resistance and low output resistance, it is effective as a buffer in
2621:
Sekigawa, Toshihiro; Hayashi, Yutaka (1 August 1984). "Calculated threshold-voltage characteristics of an XMOS transistor having an additional bottom gate".
776:
Conversely, in a p-channel "enhancement-mode" device, a conductive region does not exist and negative voltage must be used to generate a conduction channel.
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the transistor into operation; it is rare to make non-trivial use of the body terminal in circuit designs, but its presence is important when setting up the
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argues that "had
Brattain and Bardeen been working with silicon instead of germanium they would have stumbled across a successful field effect transistor".
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or changes to threshold voltage during handling. This is not usually a problem after the device has been installed in a properly designed circuit.
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The SB-FET (Schottky-barrier field-effect transistor) is a field-effect transistor with metallic source and drain contact electrodes, which create
191:
in 1947, shortly after the 17-year patent expired. Shockley initially attempted to build a working FET by trying to modulate the conductivity of a
4329:
3615:
3213:
Sarvari H.; Ghayour, R.; Dastjerdy, E. (2011). "Frequency analysis of graphene nanoribbon FET by Non-Equilibrium Green's
Function in mode space".
1161:
104:
2083:, Lincoln, Derick & Frosch, Carl J., "Oxidation of semiconductive surfaces for controlled diffusion", issued 1957-08-13
1828:, Lincoln, Derick & Frosch, Carl J., "Oxidation of semiconductive surfaces for controlled diffusion", issued 1957-08-13
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IGBTs are used in switching internal combustion engine ignition coils, where fast switching and voltage blocking capabilities are important.
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Because the FETs are controlled by gate charge, once the gate is closed or open, there is no additional power draw, as there would be with a
992:(ion-sensitive field-effect transistor) can be used to measure ion concentrations in a solution; when the ion concentration (such as H, see
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in their operation, but not both. Many different types of field effect transistors exist. Field effect transistors generally display very
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increased further, the pinch-off point of the channel begins to move away from the drain towards the source. The FET is said to be in
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circuits because the physical orientation of the FET was decided for other reasons, such as printed circuit layout considerations.
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of atoms, molecules and ions by the oxide from the ambient. The latter were found to be much more numerous and to have much longer
282:. Bardeen applied the theory of surface states on semiconductors (previous work on surface states was done by Shockley in 1939 and
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from penetrating into the material. By the mid-1950s, researchers had largely given up on the FET concept, and instead focused on
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342:. They showed that oxide layer prevented certain dopants into the silicon wafer, while allowing for others, thus discovering the
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Even though the conductive channel formed by gate-to-source voltage no longer connects source to drain during saturation mode,
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and Y. Watanabe in 1950. Following
Shockley's theoretical treatment on the JFET in 1952, a working practical JFET was built by
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source (S), through which the carriers enter the channel. Conventionally, current entering the channel at S is designated by I
461:, and much lower power consumption and higher density than bipolar junction transistors, the MOSFET made it possible to build
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2234:
1331:
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between the gate, allowing the transistor to retain its state in the absence of bias - such devices may have application as
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drain (D), through which the carriers leave the channel. Conventionally, current leaving the channel at D is designated by I
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1474:
974:) is a type of Field-effect transistor (FET) which channel is one or multiple nanowires and does not present any junction.
88:
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and in the process their oxide got inadvertently washed off. They stumbled upon a completely different transistor, the
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Depletion-type FETs under typical voltages: JFET, poly-silicon MOSFET, double-gate MOSFET, metal-gate MOSFET, MESFET.
618:
509:
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543:, flow from the source to the drain. Source and drain terminal conductors are connected to the semiconductor through
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was used as a gate dielectric, but he didn't pursue the idea. In his other patent filed the same year he described a
17:
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874:. These transistors are capable of about 2.23 GHz cutoff frequency, much higher than standard silicon FETs.
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and
Lincoln Derrick accidentally grew a layer of silicon dioxide over the silicon wafer, for which they observed
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547:. The conductivity of the channel is a function of the potential applied across the gate and source terminals.
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IBM Research
Unveils 'VTFET': A Revolutionary New Chip Architecture Which is Two Times the Performance finFET
1012:, cell-based BioFETs (CPFETs), beetle/chip FETs (BeetleFETs), and FETs based on ion-channels/protein binding.
400:, conceived of a device similar to the later proposed MOSFET, although Labate's device didn't explicitly use
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360:, Shockley had circulated the preprint of their article in December 1956 to all his senior staff, including
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Top: source, bottom: drain, left: gate, right: bulk. Voltages that lead to channel formation are not shown.
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gate (G), the terminal that modulates the channel conductivity. By applying voltage to G, one can control I
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1042:(junction field-effect transistor) uses a reverse biased p–n junction to separate the gate from the body.
922:
180:
159:
The concept of a field-effect transistor (FET) was first patented by the Austro-Hungarian born physicist
103:. FETs control the flow of current by the application of a voltage to the gate, which in turn alters the
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3536:"Source-gated transistors for order-of-magnitude performance improvements in thin-film digital circuits"
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1598:
Nishizawa, Jun-Ichi (1982). "Junction Field-Effect Devices". In Sittig, Roland; Roggwiller, P. (eds.).
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in general. Junction transistors were relatively bulky devices that were difficult to manufacture on a
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The TQFET (topological quantum field-effect transistor) switches a 2D material from dissipationless
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The HIGFET (heterostructure insulated-gate field-effect transistor) is now used mainly in research.
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1773:(1994). "Research on crystal rectifiers during World War II and the invention of the transistor".
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484:(complementary MOS), a semiconductor device fabrication process for MOSFETs, was developed by
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and others came up with various methods of producing atomically clean semiconductor surfaces.
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2228:
2012:
1906:
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like a variable resistor and the FET is said to be operating in a linear mode or ohmic mode.
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1003:(Biologically sensitive field-effect transistor) is a class of sensors/biosensors based on
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interface. Slow surface states were found to be associated with the oxide layer because of
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calls it a "groundbreaking invention that transformed life and culture around the world".
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are not blocked from flowing. Considering again an n-channel enhancement-mode device, a
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FET. In March 1957, in his laboratory notebook, Ernesto Labate, a research scientist at
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2513:"Remarks by Director Iancu at the 2019 International Intellectual Property Conference"
1542:
Puers, Robert; Baldi, Livio; Voorde, Marcel Van de; Nooten, Sebastiaan E. van (2017).
1116:. The fully depleted wide-band-gap material forms the isolation between gate and body.
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2230:
To the Digital Age: Research Labs, Start-up Companies, and the Rise of MOS Technology
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2014:
To the Digital Age: Research Labs, Start-up Companies, and the Rise of MOS Technology
1431:
1374:(complementary metal oxide semiconductor) process technology is the basis for modern
1204:
1097:('on' state) to conventional insulator ('off' state) using an applied electric field.
1023:, by using a gate made of single-strand DNA molecules to detect matching DNA strands.
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Prakash, Abhijith; Ilatikhameneh, Hesameddin; Wu, Peng; Appenzeller, Joerg (2017).
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3105:(2011). "Tunnel field-effect transistors as energy-efficient electronic switches".
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D. Kahng and S. M. Sze, "A floating gate and its application to memory devices",
1963:
Development of HfO2-Based Ferroelectric Memories for Future CMOS Technology Nodes
1744:
1607:
1481:
US Patent no. 1,745,175 (filed: 8 October 1926 ; issued: 28 January 1930).
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39:
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3340:"Understanding contact gating in Schottky barrier transistors from 2D channels"
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1471:
234:(SIT), a type of JFET with a short channel, was invented by Japanese engineers
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3186:"Organic transistor paves way for new generations of neuro-inspired computers"
3102:
3041:"Recent advances in biologically sensitive field-effect transistors (BioFETs)"
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1786:
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1188:
The GFET is a highly sensitive graphene-based field effect transistor used as
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1957, Diagram of one of the SiO2 transistor devices made by Frosch and Derrick
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2066:
1641:
Advanced Materials Innovation: Managing Global Technology in the 21st century
949:) between the gate and the body. This is by far the most common type of FET.
4787:
4631:
4626:
4616:
4543:
4423:
4257:
4252:
4177:
4102:
3676:
3625:
2983:
1670:"The Foundation of Today's Digital World: The Triumph of the MOS Transistor"
1189:
1020:
882:
585:
501:
397:
300:
283:
204:
188:
3577:
3407:
3276:
3136:
3075:
2991:
114:
since they involve single-carrier-type operation. That is, FETs use either
967:
are still the device of choice for drain-to-source voltages of 1 to 200 V.
829:
is by far the most common. Most FETs are made by using conventional bulk
4809:
4757:
4737:
4715:
4601:
4596:
4484:
4473:
4402:
4172:
3522:
Slow Body Diode Failures of Field Effect Transistors (FETs): A Case Study
2940:
2458:
1881:
Makers of the Microchip: A Documentary History of Fairchild Semiconductor
1285:
1058:
867:
721:
698:
115:
3792:
3642:
3128:
1908:
ULSI Process Integration III: Proceedings of the International Symposium
712:
130:
at low frequencies. The most widely used field-effect transistor is the
4669:
4606:
4428:
4413:
4267:
4224:
3872:
3776:
3635:
2855:. Upper Saddle River NJ: Pearson Education/Prentice-Hall. p. 102.
2400:
2058:
1727:
1446:
826:
810:
670:
521:
296:
3559:
2331:. Berlin, Heidelberg: Springer-Verlag Berlin Heidelberg. p. 321.
2116:
2101:"Surface Protection and Selective Masking during Diffusion in Silicon"
1864:
1849:"Surface Protection and Selective Masking during Diffusion in Silicon"
1708:
1236:(BJT), and is found in noise-sensitive electronics such as tuners and
996:) changes, the current through the transistor will change accordingly.
520:
MOSFET, originated from the research of Digh Hisamoto and his team at
4742:
4433:
4397:
4362:
3922:
3894:
3867:
3842:
3067:
1441:
1367:
1219:
1200:
1193:
1139:
1120:
1113:
1030:
1026:
1009:
1000:
935:
701:
513:
440:
208:
131:
740:"depletion-mode" device, a negative gate-to-source voltage causes a
3499:"Origins of SiC FETs and Their Evolution Toward the Perfect Switch"
3356:
266:
The foundations of MOSFET technology were laid down by the work of
4819:
4730:
4489:
4262:
4055:
3917:
3912:
2707:
1252:
1004:
989:
881:
825:
FETs can be constructed from various semiconductors, out of which
711:
692:
689:
I–V characteristics and output plot of a JFET n-channel transistor
684:
584:
372:
2265:(1960). "Silicon-silicon dioxide field induced surface devices".
4762:
4145:
4091:
3992:
3945:
3883:
3534:
Sporea, R.A.; Trainor, M.J.; Young, N.D.; Silva, S.R.P. (2014).
2281:"1960 – Metal Oxide Semiconductor (MOS) Transistor Demonstrated"
1426:
1371:
1149:
The GNRFET (graphene nanoribbon field-effect transistor) uses a
1101:
1039:
938:(metal–oxide–semiconductor field-effect transistor) utilizes an
481:
334:
and Lincoln Derrick accidentally covered the surface of silicon
155:, who proposed the concept of a field-effect transistor in 1925.
3796:
3646:
2701:"The Breakthrough Advantage for FPGAs with Tri-Gate Technology"
1108:), also called a HFET (heterostructure FET), can be made using
3251:
Semiconductor Glossary: A Resource for Semiconductor Community
1698:
Howard R. Duff (2001). "John Bardeen and transistor physics".
1299:
1241:
1123:(metal–semiconductor field-effect transistor) substitutes the
656:
in the diagram, is the distance between source and drain. The
3160:"Topological off-on switch could make new type of transistor"
2884:(Fifth ed.). New York: Oxford University Press. p.
753:, and the voltage at which this occurs is referred to as the
351:
as oxide diffusion masking, which would later be used in the
3626:
The Field Effect Transistor as a Voltage Controlled Resistor
1545:
Nanoelectronics: Materials, Devices, Applications, 2 Volumes
1033:
or gate-all-around FET, used on high density processor chips
3634:. rolinychupetin (L.R.Linares). March 30, 2013 – via
2913:(Fourth ed.). New York: Wiley. pp. §1.5.2 p. 45.
2541:"1963: Complementary MOS Circuit Configuration is Invented"
1075:
The MODFET (modulation-doped field-effect transistor) is a
167:
in 1934, but they were unable to build a working practical
43:
Cross-sectional view of a field-effect transistor, showing
3616:
Winning the Battle Against Latchup in CMOS Analog Switches
2132:"The mechanisms for silicon oxidation in steam and oxygen"
866:
In June 2011, IBM announced that it had successfully used
454:
H. K. Gummel and R. Lindner who characterized the device.
2830:. Englewood Cliffs, NJ: Prentice Hall. pp. 315–316.
1185:
at both the source-channel and drain-channel interfaces.
424:
thermally grown oxides and fabricated a high quality Si/
195:, but was unsuccessful, mainly due to problems with the
1472:"Method and apparatus for controlling electric current"
1288:). However, modern FET devices can often incorporate a
1083:
structure formed by graded doping of the active region.
516:(fin field-effect transistor), a type of 3D non-planar
2206:. Springer Science & Business Media. p. 322.
1940:. Springer Science & Business Media. p. 324.
1497:
The Design of CMOS Radio-Frequency Integrated Circuits
1393:). With this concept, one can construct a solid-state
246:
in 1953. However, the JFET still had issues affecting
222:
The first FET device to be successfully built was the
3423:"What Are Graphene Field Effect Transistors (GFETs)?"
3215:
Physica E: Low-dimensional Systems and Nanostructures
2936:"IBM creates first graphene based integrated circuit"
2828:
Electronic circuits: analysis, simulation, and design
2600:. Springer Science & Business Media. p. 11.
1878:
Christophe LĂ©cuyer; David C. Brook; Jay Last (2010).
134:(metal–oxide–semiconductor field-effect transistor).
2171:"Highlights Of Silicon Thermal Oxidation Technology"
534:
Charge carrier § Majority and minority carriers
18:
Fast-reverse epitaxial diode field-effect transistor
4778:
4678:
4645:
4577:
4514:
4442:
4348:
4280:
4126:
4054:
3959:
3841:
3830:
3759:
3730:
3692:
2352:Motoyoshi, M. (2009). "Through-Silicon Via (TSV)".
512:researchers Toshihiro Sekigawa and Yutaka Hayashi.
3600:How Semiconductors and Transistors Work (MOSFETs)
3039:Schöning, Michael J.; Poghossian, Arshak (2002).
2911:Analysis and design of analog integrated circuits
2675:Institute of Electrical and Electronics Engineers
2043:"Frosch and Derick: Fifty Years Later (Foreword)"
3621:Field Effect Transistors in Theory and Practice
3015:"Flexible graphene transistor sets new records"
2793:MOSFET modeling for circuit analysis and design
2267:IRE-AIEE Solid State Device Research Conference
1263:A field-effect transistor has a relatively low
1171:) uses an organic semiconductor in its channel.
2909:PR Gray; PJ Hurst; SH Lewis; RG Meyer (2001).
2017:. Johns Hopkins University Press. p. 22.
1802:Crystal Fire: The Birth of the Information Age
956:) or DGMOS, a MOSFET with two insulated gates.
621:. Most FETs have a fourth terminal called the
3808:
3658:
2130:Ligenza, J. R.; Spitzer, W. G. (1960-07-01).
2041:Huff, Howard; Riordan, Michael (2007-09-01).
1049:(SIT) is a type of JFET with a short channel.
8:
3275:Appenzeller J, et al. (November 2008).
2768:. Singapore: McGraw-Hill. pp. 384–385.
1600:Semiconductor Devices for Power Conditioning
1008:(ImmunoFETs), gene-modified FETs (GenFETs),
979:metal–nitride–oxide–semiconductor transistor
780:Effect of drain-to-source voltage on channel
2789:Galup-Montoro, C.; Schneider, M.C. (2007).
1749:. The Electrochemical Society. p. 43.
1633:
1631:
1629:
1627:
1334:. Unsourced material may be challenged and
175:effect was later observed and explained by
3838:
3815:
3801:
3793:
3665:
3651:
3643:
2759:
2757:
2136:Journal of Physics and Chemistry of Solids
1800:Michael Riordan; Lillian Hoddeson (1997).
1216:Vertical-Transport Field-Effect Transistor
843:Among the more unusual body materials are
215:in 1947, which was followed by Shockley's
27:"FET" redirects here. For other uses, see
3567:
3397:
3355:
2518:United States Patent and Trademark Office
2314:Technical memorandum of Bell Laboratories
1707:
1354:Learn how and when to remove this message
605:terminals that correspond roughly to the
508:MOSFET was first demonstrated in 1984 by
2597:FinFETs and Other Multi-Gate Transistors
2507:
2505:
2310:"Silicon-Silicon Dioxide Surface Device"
2175:Silicon materials science and technology
1389:switching analog signals between paths (
1222:to allow higher density and lower power.
708:for this device lies around 0.45 V.
406:
147:
38:
2665:"IEEE Andrew S. Grove Award Recipients"
2454:High Performance Audio Power Amplifiers
1463:
1162:carbon nanotube field-effect transistor
1146:organic memory field-effect transistor.
793:; although some authors refer to it as
2105:Journal of The Electrochemical Society
1853:Journal of The Electrochemical Society
1019:) is a specialized FET that acts as a
435:Metal-oxide-semiconductor FET (MOSFET)
3476:. New Delhi: Prentice-Hall of India.
3474:Electronic devices and siraj circuits
3281:IEEE Transactions on Electron Devices
2584:, vol. 46, no. 4, 1967, pp. 1288–1295
2047:The Electrochemical Society Interface
2036:
2034:
1842:
1840:
1489:
1487:
1090:) is based on band-to-band tunneling.
851:or other amorphous semiconductors in
226:(JFET). A JFET was first patented by
91:(MOSFET). FETs have three terminals:
7:
4247:Three-dimensional integrated circuit
2851:Spencer, R.R.; Ghausi, M.S. (2001).
2396:"Transistors Keep Moore's Law Alive"
2329:History of Semiconductor Engineering
2204:History of Semiconductor Engineering
1938:History of Semiconductor Engineering
1693:
1691:
1332:adding citations to reliable sources
4028:Programmable unijunction transistor
3632:"The FET (field effect transistor)"
3158:Dumé, Isabelle (12 December 2018).
1112:in a ternary semiconductor such as
831:semiconductor processing techniques
522:Hitachi Central Research Laboratory
3929:Multi-gate field-effect transistor
2876:Sedra, A. S.; Smith, K.C. (2004).
1366:The most commonly used FET is the
840:as the active region, or channel.
25:
3907:Insulated-gate bipolar transistor
3254:. World Scientific. p. 244.
2582:The Bell System Technical Journal
2099:Frosch, C. J.; Derick, L (1957).
1847:Frosch, C. J.; Derick, L (1957).
1401:(source follower) configuration.
1106:high-electron-mobility transistor
1077:high-electron-mobility transistor
981:) utilizes a nitride-oxide layer
961:insulated-gate bipolar transistor
681:Effect of gate voltage on current
589:Cross section of an n-type MOSFET
4151:Heterostructure barrier varactor
3878:Chemical field-effect transistor
3721:
3685:
3606:Junction Field Effect Transistor
1961:Stefan Ferdinand MĂĽller (2016).
1746:ULSI Science and Technology/1997
1702:. Vol. 550. pp. 3–32.
1422:Chemical field-effect transistor
1304:
1131:; and is used in GaAs and other
972:Junctionless nanowire transistor
857:organic field-effect transistors
652:. The size of the gate, length
224:junction field-effect transistor
4199:Mixed-signal integrated circuit
3595:PBS The Field Effect Transistor
3091:, HIGFET and method - Motorola]
3013:Belle Dumé (10 December 2012).
2766:Electronic devices and circuits
2734:Electronic devices and circuits
2571:, filed in 1960, issued in 1963
2488:National Inventors Hall of Fame
1176:quantum field effect transistor
1169:organic field-effect transistor
640:This fourth terminal serves to
550:The FET's three terminals are:
496:in 1963. The first report of a
2424:"Who Invented the Transistor?"
2235:Johns Hopkins University Press
1986:B.G Lowe; R.A. Sareen (2013).
1804:. W. W. Norton & Company.
1638:Moskowitz, Sanford L. (2016).
1602:. Springer. pp. 241–272.
1088:tunnel field-effect transistor
985:between the gate and the body.
565:. Drain-to-source voltage is V
476:US Patent and Trademark Office
107:between the drain and source.
1:
3277:"Toward Nanowire Electronics"
2934:Bob Yirka (10 January 2011).
1988:Semiconductor X-Ray Detectors
1884:. MIT Press. pp. 62–63.
1575:The Physics of Semiconductors
1218:, IBM's 2021 modification of
720:The FET controls the flow of
716:FET conventional symbol types
89:metal-oxide-semiconductor FET
4230:Silicon controlled rectifier
4092:Organic light-emitting diode
3982:Diffused junction transistor
3461:VIII.5. Noise in Transistors
2643:10.1016/0038-1101(84)90036-4
2148:10.1016/0022-3697(60)90219-5
1608:10.1007/978-1-4684-7263-9_11
1437:Field effect (semiconductor)
1065:, especially medium-powered
925:to produce either an n-type
835:single crystal semiconductor
500:was made by Dawon Kahng and
4034:Static induction transistor
3971:Bipolar junction transistor
3923:MOS field-effect transistor
3895:Fin field-effect transistor
3772:Complementary feedback pair
3694:Bipolar junction transistor
3497:Bhalla, Anup (2021-09-17).
3235:10.1016/j.physe.2011.04.018
2227:Bassett, Ross Knox (2007).
2179:The Electrochemical Society
2011:Bassett, Ross Knox (2007).
1913:The Electrochemical Society
1743:Massoud, Hisham Z. (1997).
1249:bipolar junction transistor
1234:bipolar junction transistor
1047:static induction transistor
1017:DNA field-effect transistor
510:Electrotechnical Laboratory
261:bipolar junction transistor
232:static induction transistor
217:bipolar junction transistor
4904:
4241:Static induction thyristor
3472:Allen Mottershead (2004).
3374:10.1038/s41598-017-12816-3
2670:IEEE Andrew S. Grove Award
2366:10.1109/JPROC.2008.2007462
1700:AIP Conference Proceedings
1573:Grundmann, Marius (2010).
1505:Cambridge University Press
859:(OFETs) that are based on
531:
438:
171:based on the concept. The
141:
83:. It comes in two types:
26:
4410:(Hexode, Heptode, Octode)
4162:Hybrid integrated circuit
4005:Light-emitting transistor
3719:
3683:
2738:McGraw-Hill International
1787:10.1080/07341519408581858
468:communications technology
445:Following this research,
144:History of the transistor
4858:Field-effect transistors
4457:Backward-wave oscillator
4167:Light emitting capacitor
4023:Point-contact transistor
3993:Junction Gate FET (JFET)
3301:10.1109/ted.2008.2008011
2880:Microelectronic circuits
2853:Microelectronic circuits
2826:Norbert R Malik (1995).
921:The channel of a FET is
809:a resistance similar to
305:point-contact transistor
213:point-contact transistor
4888:South Korean inventions
4468:Crossed-field amplifier
3987:Field-effect transistor
3732:Field-effect transistor
2984:10.1126/science.1204428
2623:Solid-State Electronics
2546:Computer History Museum
2429:Computer History Museum
2354:Proceedings of the IEEE
2289:Computer History Museum
2169:Deal, Bruce E. (1998).
1905:Claeys, Cor L. (2003).
1674:Computer History Museum
1494:Lee, Thomas H. (2003).
1408:Source-gated transistor
1270:electrostatic discharge
930:Types of FETs include:
849:polycrystalline silicon
815:constant-current source
494:Fairchild Semiconductor
255:prevented the external
161:Julius Edgar Lilienfeld
153:Julius Edgar Lilienfeld
110:FETs are also known as
75:to control the flow of
61:field-effect transistor
4637:Voltage-regulator tube
4204:MOS integrated circuit
4069:Constant-current diode
4045:Unijunction transistor
3602:WeCanFigureThisOut.org
3503:Power Electronics News
3248:Jerzy Ruzyllo (2016).
2764:Jacob Millman (1985).
2594:Colinge, J.P. (2008).
1775:History and Technology
1729:Designing Analog Chips
1265:gain–bandwidth product
918:
861:organic semiconductors
717:
709:
690:
590:
412:
358:Shockley Semiconductor
181:Walter Houser Brattain
156:
56:
4706:Electrolytic detector
4479:Inductive output tube
4295:Low-dropout regulator
4210:Organic semiconductor
4141:Printed circuit board
3977:Darlington transistor
3824:Electronic components
3767:Darlington transistor
3760:Multiple transistors:
3089:freepatentsonline.com
2568:U.S. patent 3,102,230
1646:John Wiley & Sons
1550:John Wiley & Sons
1251:or with non-latching
1095:topological insulator
885:
853:thin-film transistors
715:
696:
688:
588:
410:
371:filed a patent for a
169:semiconducting device
151:
142:Further information:
42:
4878:Hungarian inventions
4524:Beam deflection tube
4193:Metal oxide varistor
4086:Light-emitting diode
3940:Thin-film transistor
3901:Floating-gate MOSFET
2797:. London/Singapore:
2681:on September 9, 2018
2451:Duncan, Ben (1996).
1328:improve this section
1238:low-noise amplifiers
581:More about terminals
498:floating-gate MOSFET
380:. In February 1957,
378:floating gate MOSFET
248:junction transistors
183:while working under
128:high input impedance
112:unipolar transistors
29:FET (disambiguation)
4883:Japanese inventions
4873:Egyptian inventions
4868:Austrian inventions
4500:Traveling-wave tube
4300:Switching regulator
4136:Printed electronics
4113:Step recovery diode
3890:Depletion-load NMOS
3611:CMOS gate circuitry
3552:2014NatSR...4E4295S
3366:2017NatSR...712596P
3293:2008ITED...55.2827A
3227:2011PhyE...43.1509S
3129:10.1038/nature10679
3121:2011Natur.479..329I
3060:2002Ana...127.1137S
2976:2011Sci...332.1294L
2970:(6035): 1294–1297.
2635:1984SSEle..27..827S
1577:. Springer-Verlag.
1379:integrated circuits
1209:non-volatile memory
1151:graphene nanoribbon
1133:III-V semiconductor
1127:of the JFET with a
1110:bandgap engineering
1067:brushless DC motors
421:surface passivation
384:filed a patent for
4805:Crystal oscillator
4665:Variable capacitor
4340:Switched capacitor
4282:Voltage regulators
4156:Integrated circuit
4040:Tetrode transistor
4018:Pentode transistor
4011:Organic LET (OLET)
3998:Organic FET (OFET)
3540:Scientific Reports
3344:Scientific Reports
3194:. January 29, 2010
2404:. 12 December 2018
2327:Lojek, Bo (2007).
2308:KAHNG, D. (1961).
2285:The Silicon Engine
2237:. pp. 22–23.
2202:Lojek, Bo (2007).
2059:10.1149/2.F02073IF
1936:Lojek, Bo (2007).
1915:. pp. 27–30.
1477:2022-04-09 at the
1383:process technology
919:
872:integrated circuit
870:-based FETs in an
718:
710:
691:
667:transmission gates
650:integrated circuit
591:
413:
390:germanium monoxide
263:(BJT) technology.
236:Jun-ichi Nishizawa
157:
57:
36:Type of transistor
4840:
4839:
4800:Ceramic resonator
4612:Mercury-arc valve
4564:Video camera tube
4516:Cathode-ray tubes
4276:
4275:
3884:Complementary MOS
3790:
3789:
3560:10.1038/srep04295
3483:978-81-203-0124-5
3287:(11): 2827–2845.
3261:978-981-4749-56-5
3115:(7373): 329–337.
2920:978-0-471-32168-2
2895:978-0-19-514251-8
2862:978-0-201-36183-4
2837:978-0-02-374910-0
2812:978-981-256-810-6
2775:978-0-07-085505-2
2747:978-0-07-085505-2
2607:978-0-387-71751-7
2468:978-0-08-050804-7
2432:. 4 December 2013
2338:978-3-540-34258-8
2244:978-0-8018-8639-3
2117:10.1149/1.2428650
2024:978-0-8018-8639-3
1997:978-1-4665-5401-6
1972:978-3-7392-4894-3
1947:978-3-540-34258-8
1922:978-1-56677-376-8
1891:978-0-262-01424-3
1865:10.1149/1.2428650
1811:978-0-393-04124-8
1756:978-1-56677-130-6
1709:10.1063/1.1354371
1655:978-0-470-50892-3
1617:978-1-4684-7265-3
1584:978-3-642-13884-3
1559:978-3-527-34053-8
1514:978-1-139-64377-1
1470:Lilienfeld, J.E.
1364:
1363:
1356:
1183:Schottky barriers
845:amorphous silicon
755:threshold voltage
706:threshold voltage
528:Basic information
16:(Redirected from
4895:
4853:Transistor types
4694:electrical power
4579:Gas-filled tubes
4463:Cavity magnetron
4290:Linear regulator
3839:
3817:
3810:
3803:
3794:
3782:Long-tailed pair
3725:
3708:Common collector
3689:
3667:
3660:
3653:
3644:
3639:
3582:
3581:
3571:
3531:
3525:
3519:
3513:
3512:
3510:
3509:
3494:
3488:
3487:
3469:
3463:
3458:
3452:
3444:
3438:
3437:
3435:
3433:
3418:
3412:
3411:
3401:
3359:
3335:
3329:
3328:
3272:
3266:
3265:
3245:
3239:
3238:
3221:(8): 1509–1513.
3210:
3204:
3203:
3201:
3199:
3182:
3176:
3175:
3173:
3171:
3166:. IOP Publishing
3155:
3149:
3148:
3101:Ionescu, A. M.;
3098:
3092:
3086:
3080:
3079:
3068:10.1039/B204444G
3054:(9): 1137–1151.
3045:
3036:
3030:
3029:
3027:
3025:
3010:
3004:
3003:
2959:
2953:
2952:
2950:
2948:
2931:
2925:
2924:
2906:
2900:
2899:
2883:
2873:
2867:
2866:
2848:
2842:
2841:
2823:
2817:
2816:
2799:World Scientific
2796:
2786:
2780:
2779:
2761:
2752:
2751:
2726:
2720:
2719:
2717:
2715:
2705:
2697:
2691:
2690:
2688:
2686:
2677:. Archived from
2661:
2655:
2654:
2618:
2612:
2611:
2591:
2585:
2578:
2572:
2570:
2564:
2558:
2557:
2555:
2553:
2537:
2531:
2530:
2528:
2526:
2509:
2500:
2499:
2497:
2495:
2479:
2473:
2472:
2448:
2442:
2441:
2439:
2437:
2420:
2414:
2413:
2411:
2409:
2392:
2386:
2385:
2349:
2343:
2342:
2324:
2318:
2317:
2305:
2299:
2298:
2296:
2295:
2277:
2271:
2270:
2255:
2249:
2248:
2224:
2218:
2217:
2199:
2193:
2192:
2166:
2160:
2159:
2127:
2121:
2120:
2096:
2090:
2089:
2088:
2084:
2077:
2071:
2070:
2038:
2029:
2028:
2008:
2002:
2001:
1983:
1977:
1976:
1958:
1952:
1951:
1933:
1927:
1926:
1902:
1896:
1895:
1875:
1869:
1868:
1844:
1835:
1834:
1833:
1829:
1822:
1816:
1815:
1797:
1791:
1790:
1771:Lillian Hoddeson
1767:
1761:
1760:
1740:
1734:
1733:
1720:
1714:
1713:
1711:
1695:
1686:
1685:
1683:
1681:
1666:
1660:
1659:
1635:
1622:
1621:
1595:
1589:
1588:
1570:
1564:
1563:
1539:
1533:
1532:
1530:
1529:
1523:
1517:. Archived from
1502:
1491:
1482:
1468:
1452:Multigate device
1359:
1352:
1348:
1345:
1339:
1308:
1300:
1194:chemical sensors
1153:for its channel.
1129:Schottky barrier
954:dual-gate MOSFET
914:
908:
902:
896:
890:
806:depletion region
751:depletion region
742:depletion region
704:. Note that the
459:high scalability
404:as an insulator.
338:with a layer of
325:Philo Farnsworth
321:relaxation times
309:Lillian Hoddeson
268:William Shockley
185:William Shockley
21:
4903:
4902:
4898:
4897:
4896:
4894:
4893:
4892:
4863:Arab inventions
4843:
4842:
4841:
4836:
4774:
4689:audio and video
4674:
4641:
4573:
4510:
4438:
4419:Photomultiplier
4344:
4272:
4220:Quantum circuit
4128:
4122:
4064:Avalanche diode
4050:
3962:
3955:
3844:
3833:
3826:
3821:
3791:
3786:
3755:
3726:
3717:
3690:
3679:
3671:
3630:
3591:
3586:
3585:
3533:
3532:
3528:
3520:
3516:
3507:
3505:
3496:
3495:
3491:
3484:
3471:
3470:
3466:
3459:
3455:
3445:
3441:
3431:
3429:
3421:Miklos, Bolza.
3420:
3419:
3415:
3337:
3336:
3332:
3274:
3273:
3269:
3262:
3247:
3246:
3242:
3212:
3211:
3207:
3197:
3195:
3184:
3183:
3179:
3169:
3167:
3157:
3156:
3152:
3100:
3099:
3095:
3087:
3083:
3043:
3038:
3037:
3033:
3023:
3021:
3012:
3011:
3007:
2961:
2960:
2956:
2946:
2944:
2933:
2932:
2928:
2921:
2908:
2907:
2903:
2896:
2875:
2874:
2870:
2863:
2850:
2849:
2845:
2838:
2825:
2824:
2820:
2813:
2788:
2787:
2783:
2776:
2763:
2762:
2755:
2748:
2740:. p. 397.
2728:
2727:
2723:
2713:
2711:
2703:
2699:
2698:
2694:
2684:
2682:
2663:
2662:
2658:
2620:
2619:
2615:
2608:
2593:
2592:
2588:
2579:
2575:
2566:
2565:
2561:
2551:
2549:
2539:
2538:
2534:
2524:
2522:
2521:. June 10, 2019
2511:
2510:
2503:
2493:
2491:
2481:
2480:
2476:
2469:
2461:. p. 177.
2450:
2449:
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2435:
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2422:
2421:
2417:
2407:
2405:
2394:
2393:
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2274:
2257:
2256:
2252:
2245:
2226:
2225:
2221:
2214:
2201:
2200:
2196:
2189:
2181:. p. 183.
2168:
2167:
2163:
2129:
2128:
2124:
2098:
2097:
2093:
2086:
2079:
2078:
2074:
2040:
2039:
2032:
2025:
2010:
2009:
2005:
1998:
1985:
1984:
1980:
1973:
1960:
1959:
1955:
1948:
1935:
1934:
1930:
1923:
1904:
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1899:
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1877:
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1824:
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1697:
1696:
1689:
1679:
1677:
1668:
1667:
1663:
1656:
1648:. p. 168.
1637:
1636:
1625:
1618:
1597:
1596:
1592:
1585:
1572:
1571:
1567:
1560:
1541:
1540:
1536:
1527:
1525:
1521:
1515:
1500:
1493:
1492:
1485:
1479:Wayback Machine
1469:
1465:
1460:
1418:
1410:
1360:
1349:
1343:
1340:
1325:
1309:
1298:
1282:
1261:
1229:
1063:electric motors
947:
916:
915: Insulator
912:
910:
906:
904:
900:
898:
897: Electrons
894:
892:
891: Depletion
888:
880:
823:
791:saturation mode
782:
767:
734:
683:
646:physical layout
583:
575:
568:
564:
557:
536:
530:
443:
437:
431:stack in 1960.
429:
402:silicon dioxide
340:silicon dioxide
289:surface physics
276:Walter Brattain
252:mass-production
240:George C. Dacey
228:Heinrich Welker
163:in 1925 and by
146:
140:
124:charge carriers
122:(p-channel) as
118:(n-channel) or
67:) is a type of
37:
32:
23:
22:
15:
12:
11:
5:
4901:
4899:
4891:
4890:
4885:
4880:
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4855:
4845:
4844:
4838:
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4833:
4832:
4827:
4817:
4812:
4807:
4802:
4797:
4796:
4795:
4784:
4782:
4776:
4775:
4773:
4772:
4771:
4770:
4768:Wollaston wire
4760:
4755:
4750:
4745:
4740:
4735:
4734:
4733:
4728:
4718:
4713:
4708:
4703:
4702:
4701:
4696:
4691:
4682:
4680:
4676:
4675:
4673:
4672:
4667:
4662:
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4647:
4643:
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4640:
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4634:
4629:
4624:
4619:
4614:
4609:
4604:
4599:
4594:
4589:
4583:
4581:
4575:
4574:
4572:
4571:
4566:
4561:
4556:
4551:
4549:Selectron tube
4546:
4541:
4539:Magic eye tube
4536:
4531:
4526:
4520:
4518:
4512:
4511:
4509:
4508:
4503:
4497:
4492:
4487:
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4453:
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4440:
4439:
4437:
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4426:
4421:
4416:
4411:
4405:
4400:
4395:
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4385:
4380:
4375:
4370:
4365:
4360:
4354:
4352:
4346:
4345:
4343:
4342:
4337:
4332:
4327:
4322:
4317:
4312:
4307:
4302:
4297:
4292:
4286:
4284:
4278:
4277:
4274:
4273:
4271:
4270:
4265:
4260:
4255:
4250:
4244:
4238:
4233:
4227:
4222:
4217:
4212:
4207:
4201:
4196:
4190:
4185:
4180:
4175:
4170:
4164:
4159:
4153:
4148:
4143:
4138:
4132:
4130:
4124:
4123:
4121:
4120:
4115:
4110:
4108:Schottky diode
4105:
4100:
4095:
4089:
4083:
4077:
4072:
4066:
4060:
4058:
4052:
4051:
4049:
4048:
4042:
4037:
4031:
4025:
4020:
4015:
4014:
4013:
4002:
4001:
4000:
3995:
3984:
3979:
3974:
3967:
3965:
3957:
3956:
3954:
3953:
3948:
3943:
3937:
3932:
3926:
3920:
3915:
3910:
3904:
3898:
3892:
3887:
3881:
3875:
3870:
3865:
3860:
3855:
3849:
3847:
3836:
3828:
3827:
3822:
3820:
3819:
3812:
3805:
3797:
3788:
3787:
3785:
3784:
3779:
3774:
3769:
3763:
3761:
3757:
3756:
3754:
3753:
3748:
3743:
3737:
3735:
3728:
3727:
3720:
3718:
3716:
3715:
3710:
3705:
3703:Common emitter
3699:
3697:
3691:
3684:
3681:
3680:
3672:
3670:
3669:
3662:
3655:
3647:
3641:
3640:
3628:
3623:
3618:
3613:
3608:
3603:
3597:
3590:
3589:External links
3587:
3584:
3583:
3526:
3514:
3489:
3482:
3464:
3453:
3439:
3413:
3330:
3267:
3260:
3240:
3205:
3177:
3150:
3093:
3081:
3031:
3005:
2954:
2926:
2919:
2901:
2894:
2868:
2861:
2843:
2836:
2818:
2811:
2781:
2774:
2753:
2746:
2721:
2692:
2656:
2629:(8): 827–828.
2613:
2606:
2586:
2573:
2559:
2532:
2501:
2474:
2467:
2443:
2415:
2387:
2344:
2337:
2319:
2300:
2272:
2250:
2243:
2219:
2213:978-3540342588
2212:
2194:
2188:978-1566771931
2187:
2161:
2122:
2091:
2072:
2030:
2023:
2003:
1996:
1978:
1971:
1953:
1946:
1928:
1921:
1897:
1890:
1870:
1836:
1817:
1810:
1792:
1781:(2): 121–130.
1762:
1755:
1735:
1724:Hans Camenzind
1715:
1687:
1676:. 13 July 2010
1661:
1654:
1623:
1616:
1590:
1583:
1565:
1558:
1552:. p. 14.
1534:
1513:
1483:
1462:
1461:
1459:
1456:
1455:
1454:
1449:
1444:
1439:
1434:
1429:
1424:
1417:
1414:
1409:
1406:
1362:
1361:
1344:September 2018
1312:
1310:
1303:
1297:
1294:
1281:
1278:
1260:
1257:
1228:
1225:
1224:
1223:
1212:
1197:
1186:
1179:
1172:
1165:
1158:
1154:
1147:
1136:
1117:
1098:
1091:
1084:
1073:
1070:
1061:loads such as
1055:
1052:
1051:
1050:
1036:
1035:
1034:
1024:
1013:
997:
986:
975:
968:
957:
952:The DGMOSFET (
945:
911:
905:
899:
893:
887:
879:
876:
822:
819:
781:
778:
766:
763:
733:
730:
726:electron holes
682:
679:
593:All FETs have
582:
579:
578:
577:
573:
570:
566:
562:
559:
555:
545:ohmic contacts
529:
526:
447:Mohamed Atalla
439:Main article:
436:
433:
427:
369:Ian Munro Ross
323:. At the time
280:surface states
257:electric field
197:surface states
139:
136:
73:electric field
35:
24:
14:
13:
10:
9:
6:
4:
3:
2:
4900:
4889:
4886:
4884:
4881:
4879:
4876:
4874:
4871:
4869:
4866:
4864:
4861:
4859:
4856:
4854:
4851:
4850:
4848:
4831:
4830:mercury relay
4828:
4826:
4823:
4822:
4821:
4818:
4816:
4813:
4811:
4808:
4806:
4803:
4801:
4798:
4794:
4791:
4790:
4789:
4786:
4785:
4783:
4781:
4777:
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4759:
4756:
4754:
4751:
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4746:
4744:
4741:
4739:
4736:
4732:
4729:
4727:
4724:
4723:
4722:
4719:
4717:
4714:
4712:
4709:
4707:
4704:
4700:
4697:
4695:
4692:
4690:
4687:
4686:
4684:
4683:
4681:
4677:
4671:
4668:
4666:
4663:
4659:
4656:
4655:
4654:
4653:Potentiometer
4651:
4650:
4648:
4644:
4638:
4635:
4633:
4630:
4628:
4625:
4623:
4620:
4618:
4615:
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4610:
4608:
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4603:
4600:
4598:
4595:
4593:
4590:
4588:
4585:
4584:
4582:
4580:
4576:
4570:
4569:Williams tube
4567:
4565:
4562:
4560:
4557:
4555:
4552:
4550:
4547:
4545:
4542:
4540:
4537:
4535:
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4522:
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4513:
4507:
4504:
4501:
4498:
4496:
4493:
4491:
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4477:
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4472:
4469:
4466:
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4458:
4455:
4454:
4452:
4449:
4445:
4441:
4435:
4432:
4430:
4427:
4425:
4422:
4420:
4417:
4415:
4412:
4409:
4406:
4404:
4401:
4399:
4396:
4394:
4391:
4389:
4388:Fleming valve
4386:
4384:
4381:
4379:
4376:
4374:
4371:
4369:
4366:
4364:
4361:
4359:
4356:
4355:
4353:
4351:
4347:
4341:
4338:
4336:
4333:
4331:
4328:
4326:
4323:
4321:
4318:
4316:
4313:
4311:
4308:
4306:
4303:
4301:
4298:
4296:
4293:
4291:
4288:
4287:
4285:
4283:
4279:
4269:
4266:
4264:
4261:
4259:
4256:
4254:
4251:
4248:
4245:
4242:
4239:
4237:
4234:
4231:
4228:
4226:
4223:
4221:
4218:
4216:
4215:Photodetector
4213:
4211:
4208:
4205:
4202:
4200:
4197:
4194:
4191:
4189:
4186:
4184:
4183:Memtransistor
4181:
4179:
4176:
4174:
4171:
4168:
4165:
4163:
4160:
4157:
4154:
4152:
4149:
4147:
4144:
4142:
4139:
4137:
4134:
4133:
4131:
4125:
4119:
4116:
4114:
4111:
4109:
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4099:
4096:
4093:
4090:
4087:
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4041:
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4026:
4024:
4021:
4019:
4016:
4012:
4009:
4008:
4006:
4003:
3999:
3996:
3994:
3991:
3990:
3988:
3985:
3983:
3980:
3978:
3975:
3972:
3969:
3968:
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3958:
3952:
3949:
3947:
3944:
3941:
3938:
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3924:
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3916:
3914:
3911:
3908:
3905:
3902:
3899:
3896:
3893:
3891:
3888:
3885:
3882:
3879:
3876:
3874:
3871:
3869:
3866:
3864:
3861:
3859:
3856:
3854:
3851:
3850:
3848:
3846:
3840:
3837:
3835:
3832:Semiconductor
3829:
3825:
3818:
3813:
3811:
3806:
3804:
3799:
3798:
3795:
3783:
3780:
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3773:
3770:
3768:
3765:
3764:
3762:
3758:
3752:
3749:
3747:
3744:
3742:
3741:Common source
3739:
3738:
3736:
3733:
3729:
3724:
3714:
3711:
3709:
3706:
3704:
3701:
3700:
3698:
3695:
3688:
3682:
3678:
3675:
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3649:
3648:
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3629:
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3612:
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3409:
3405:
3400:
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3353:
3349:
3345:
3341:
3334:
3331:
3326:
3322:
3318:
3314:
3310:
3306:
3302:
3298:
3294:
3290:
3286:
3282:
3278:
3271:
3268:
3263:
3257:
3253:
3252:
3244:
3241:
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3228:
3224:
3220:
3216:
3209:
3206:
3193:
3192:
3187:
3181:
3178:
3165:
3164:Physics World
3161:
3154:
3151:
3146:
3142:
3138:
3134:
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3122:
3118:
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3110:
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3104:
3097:
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3082:
3077:
3073:
3069:
3065:
3061:
3057:
3053:
3049:
3042:
3035:
3032:
3020:
3019:Physics World
3016:
3009:
3006:
3001:
2997:
2993:
2989:
2985:
2981:
2977:
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2808:
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2795:
2794:
2785:
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2777:
2771:
2767:
2760:
2758:
2754:
2749:
2743:
2739:
2736:. Singapore:
2735:
2731:
2730:Jacob Millman
2725:
2722:
2709:
2702:
2696:
2693:
2680:
2676:
2672:
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2660:
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2609:
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2598:
2590:
2587:
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2574:
2569:
2563:
2560:
2548:
2547:
2542:
2536:
2533:
2520:
2519:
2514:
2508:
2506:
2502:
2490:
2489:
2484:
2483:"Dawon Kahng"
2478:
2475:
2470:
2464:
2460:
2456:
2455:
2447:
2444:
2431:
2430:
2425:
2419:
2416:
2403:
2402:
2397:
2391:
2388:
2383:
2379:
2375:
2371:
2367:
2363:
2359:
2355:
2348:
2345:
2340:
2334:
2330:
2323:
2320:
2315:
2311:
2304:
2301:
2290:
2286:
2282:
2276:
2273:
2268:
2264:
2260:
2254:
2251:
2246:
2240:
2236:
2232:
2231:
2223:
2220:
2215:
2209:
2205:
2198:
2195:
2190:
2184:
2180:
2176:
2172:
2165:
2162:
2157:
2153:
2149:
2145:
2141:
2137:
2133:
2126:
2123:
2118:
2114:
2110:
2106:
2102:
2095:
2092:
2082:
2076:
2073:
2068:
2064:
2060:
2056:
2052:
2048:
2044:
2037:
2035:
2031:
2026:
2020:
2016:
2015:
2007:
2004:
1999:
1993:
1990:. CRC Press.
1989:
1982:
1979:
1974:
1968:
1964:
1957:
1954:
1949:
1943:
1939:
1932:
1929:
1924:
1918:
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1910:
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1901:
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1882:
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1843:
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1807:
1803:
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1793:
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1747:
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1725:
1719:
1716:
1710:
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1701:
1694:
1692:
1688:
1675:
1671:
1665:
1662:
1657:
1651:
1647:
1643:
1642:
1634:
1632:
1630:
1628:
1624:
1619:
1613:
1609:
1605:
1601:
1594:
1591:
1586:
1580:
1576:
1569:
1566:
1561:
1555:
1551:
1547:
1546:
1538:
1535:
1524:on 2019-12-09
1520:
1516:
1510:
1506:
1499:
1498:
1490:
1488:
1484:
1480:
1476:
1473:
1467:
1464:
1457:
1453:
1450:
1448:
1445:
1443:
1440:
1438:
1435:
1433:
1432:FET amplifier
1430:
1428:
1425:
1423:
1420:
1419:
1415:
1413:
1407:
1405:
1402:
1400:
1396:
1392:
1386:
1384:
1380:
1377:
1373:
1369:
1358:
1355:
1347:
1337:
1333:
1329:
1323:
1322:
1318:
1313:This section
1311:
1307:
1302:
1301:
1295:
1293:
1291:
1287:
1280:Failure modes
1279:
1277:
1273:
1271:
1266:
1259:Disadvantages
1258:
1256:
1254:
1250:
1245:
1243:
1239:
1235:
1226:
1221:
1217:
1213:
1210:
1206:
1205:ferroelectric
1202:
1198:
1195:
1191:
1187:
1184:
1180:
1177:
1173:
1170:
1166:
1163:
1159:
1155:
1152:
1148:
1145:
1141:
1137:
1134:
1130:
1126:
1122:
1118:
1115:
1111:
1107:
1103:
1099:
1096:
1092:
1089:
1085:
1082:
1078:
1074:
1071:
1068:
1064:
1060:
1056:
1053:
1048:
1044:
1043:
1041:
1037:
1032:
1028:
1025:
1022:
1018:
1014:
1011:
1006:
1002:
998:
995:
991:
987:
984:
980:
976:
973:
969:
966:
965:Power MOSFETs
962:
958:
955:
951:
950:
948:
941:
937:
933:
932:
931:
928:
927:semiconductor
924:
884:
877:
875:
873:
869:
864:
862:
858:
854:
850:
846:
841:
839:
836:
832:
828:
820:
818:
816:
812:
807:
803:
798:
796:
792:
786:
779:
777:
774:
772:
765:p-channel FET
764:
762:
760:
756:
752:
746:
743:
739:
732:n-channel FET
731:
729:
727:
723:
714:
707:
703:
700:
695:
687:
680:
678:
674:
672:
668:
662:
661:30 GHz.
659:
655:
651:
647:
643:
639:
637:
632:
628:
624:
620:
616:
612:
608:
604:
600:
596:
587:
580:
571:
560:
553:
552:
551:
548:
546:
542:
535:
527:
525:
523:
519:
515:
511:
507:
503:
499:
495:
491:
490:Frank Wanlass
487:
486:Chih-Tang Sah
483:
479:
477:
473:
469:
464:
460:
455:
452:
448:
442:
434:
432:
430:
422:
418:
409:
405:
403:
399:
395:
391:
387:
383:
382:John Wallmark
379:
374:
370:
365:
363:
359:
354:
349:
345:
341:
337:
333:
328:
326:
322:
318:
312:
310:
306:
302:
298:
292:
290:
285:
281:
277:
273:
269:
264:
262:
258:
253:
249:
245:
241:
237:
233:
230:in 1945. The
229:
225:
220:
218:
214:
210:
206:
202:
201:dangling bond
198:
194:
193:semiconductor
190:
186:
182:
178:
174:
170:
166:
162:
154:
150:
145:
137:
135:
133:
129:
125:
121:
117:
113:
108:
106:
102:
98:
94:
90:
86:
82:
81:semiconductor
78:
74:
71:that uses an
70:
66:
62:
54:
50:
46:
41:
34:
30:
19:
4587:Cold cathode
4554:Storage tube
4444:Vacuum tubes
4393:Neutron tube
4368:Beam tetrode
4350:Vacuum tubes
3986:
3935:Power MOSFET
3746:Common drain
3731:
3543:
3539:
3529:
3517:
3506:. Retrieved
3502:
3492:
3473:
3467:
3456:
3447:
3442:
3430:. Retrieved
3426:
3416:
3350:(1): 12596.
3347:
3343:
3333:
3284:
3280:
3270:
3250:
3243:
3218:
3214:
3208:
3196:. Retrieved
3191:ScienceDaily
3189:
3180:
3168:. Retrieved
3163:
3153:
3112:
3106:
3096:
3084:
3051:
3047:
3034:
3022:. Retrieved
3018:
3008:
2967:
2963:
2957:
2945:. Retrieved
2939:
2929:
2910:
2904:
2879:
2871:
2852:
2846:
2827:
2821:
2792:
2784:
2765:
2733:
2724:
2712:. Retrieved
2695:
2683:. Retrieved
2679:the original
2668:
2659:
2626:
2622:
2616:
2596:
2589:
2581:
2576:
2562:
2550:. Retrieved
2544:
2535:
2523:. Retrieved
2516:
2492:. Retrieved
2486:
2477:
2453:
2446:
2434:. Retrieved
2427:
2418:
2406:. Retrieved
2399:
2390:
2360:(1): 43–48.
2357:
2353:
2347:
2328:
2322:
2313:
2303:
2292:. Retrieved
2284:
2275:
2266:
2253:
2229:
2222:
2203:
2197:
2174:
2164:
2139:
2135:
2125:
2108:
2104:
2094:
2075:
2053:(3): 29–29.
2050:
2046:
2013:
2006:
1987:
1981:
1962:
1956:
1937:
1931:
1907:
1900:
1880:
1873:
1856:
1852:
1820:
1801:
1795:
1778:
1774:
1765:
1745:
1738:
1728:
1718:
1699:
1678:. Retrieved
1664:
1640:
1599:
1593:
1574:
1568:
1544:
1537:
1526:. Retrieved
1519:the original
1496:
1466:
1411:
1403:
1399:common-drain
1395:mixing board
1391:multiplexing
1387:
1365:
1350:
1341:
1326:Please help
1314:
1283:
1274:
1262:
1246:
1230:
1160:The CNTFET (
1144:nanoparticle
1125:p–n junction
1081:quantum well
1029:, including
1015:The DNAFET (
994:pH electrode
920:
865:
842:
824:
799:
794:
790:
787:
783:
775:
770:
768:
758:
747:
737:
735:
719:
675:
663:
657:
653:
634:
630:
626:
622:
614:
610:
606:
602:
598:
594:
592:
549:
537:
480:
463:high-density
456:
444:
414:
366:
329:
313:
293:
272:John Bardeen
265:
221:
177:John Bardeen
158:
111:
109:
105:conductivity
100:
96:
92:
85:junction FET
64:
60:
58:
52:
48:
44:
33:
4753:Transformer
4495:Sutton tube
4335:Charge pump
4188:Memory cell
4118:Zener diode
4080:Laser diode
3963:transistors
3845:transistors
3751:Common gate
3713:Common base
3198:January 14,
2142:: 131–136.
942:(typically
909: Metal
903: Holes
821:Composition
795:active mode
506:double-gate
504:in 1967. A
472:smartphones
451:Dawon Kahng
417:Carl Frosch
394:double gate
362:Jean Hoerni
353:fabrication
344:passivating
332:Carl Frosch
244:Ian M. Ross
87:(JFET) and
4847:Categories
4825:reed relay
4815:Parametron
4748:Thermistor
4726:resettable
4685:Connector
4646:Adjustable
4622:Nixie tube
4592:Crossatron
4559:Trochotron
4534:Iconoscope
4529:Charactron
4506:X-ray tube
4378:Compactron
4358:Acorn tube
4315:Buck–boost
4236:Solaristor
4098:Photodiode
4075:Gunn diode
4071:(CLD, CRD)
3853:Transistor
3677:amplifiers
3674:Transistor
3508:2022-01-21
3432:14 January
3390:1010581463
3357:1707.01459
3170:16 January
3024:14 January
2947:14 January
2801:. p.
2294:2023-01-16
2259:Atalla, M.
2111:(9): 547.
2081:US2802760A
1859:(9): 547.
1826:US2802760A
1528:2019-07-20
1458:References
1290:body diode
1227:Advantages
1214:VTFET, or
1190:biosensors
1174:The QFET (
1167:The OFET (
1135:materials.
1086:The TFET (
977:The MNOS (
970:The JLNT (
959:The IGBT (
833:, using a
673:circuits.
532:See also:
518:multi-gate
346:effect of
317:adsorption
203:, and the
173:transistor
165:Oskar Heil
69:transistor
4788:Capacitor
4632:Trigatron
4627:Thyratron
4617:Neon lamp
4544:Monoscope
4424:Phototube
4408:Pentagrid
4373:Barretter
4258:Trancitor
4253:Thyristor
4178:Memristor
4103:PIN diode
3880:(ChemFET)
3427:Graphenea
3382:2045-2322
3317:755663637
3309:0018-9383
2651:0038-1101
2374:0018-9219
2263:Kahng, D.
2156:0022-3697
2067:1064-8208
1315:does not
1059:inductive
1021:biosensor
983:insulator
940:insulator
771:p-channel
759:inversion
738:n-channel
722:electrons
636:substrate
611:collector
524:in 1989.
502:Simon Sze
470:(such as
457:With its
415:In 1955,
398:Bell Labs
388:in which
367:In 1955,
348:oxidation
330:In 1955,
301:germanium
284:Igor Tamm
219:in 1948.
205:germanium
189:Bell Labs
116:electrons
55:terminals
4810:Inductor
4780:Reactive
4758:Varistor
4738:Resistor
4716:Antifuse
4602:Ignitron
4597:Dekatron
4485:Klystron
4474:Gyrotron
4403:Nuvistor
4320:Split-pi
4206:(MOS IC)
4173:Memistor
3931:(MuGFET)
3925:(MOSFET)
3897:(FinFET)
3578:24599023
3546:: 4295.
3450:Dec 2021
3408:28974712
3137:22094693
3103:Riel, H.
3076:12375833
2992:21659599
2941:Phys.org
2732:(1985).
2459:Elsevier
2382:29105721
1726:(2005).
1475:Archived
1416:See also
1286:derating
1079:using a
868:graphene
802:carriers
699:nanowire
4711:Ferrite
4679:Passive
4670:Varicap
4658:digital
4607:Krytron
4429:Tetrode
4414:Pentode
4268:Varicap
4249:(3D IC)
4225:RF CMOS
4129:devices
3903:(FGMOS)
3834:devices
3777:Cascode
3636:YouTube
3569:3944386
3548:Bibcode
3399:5626721
3362:Bibcode
3289:Bibcode
3223:Bibcode
3145:4322368
3117:Bibcode
3056:Bibcode
3048:Analyst
3000:3020496
2972:Bibcode
2964:Science
2631:Bibcode
2525:20 July
2494:27 June
2436:20 July
2408:18 July
2401:EETimes
1680:21 July
1447:FlowFET
1381:. This
1376:digital
1336:removed
1321:sources
1203:uses a
1010:DNAFETs
827:silicon
811:silicon
671:cascode
607:emitter
474:). The
297:silicon
138:History
77:current
4743:Switch
4434:Triode
4398:Nonode
4363:Audion
4243:(SITh)
4127:Other
4094:(OLED)
4056:Diodes
4007:(LET)
3989:(FET)
3961:Other
3909:(IGBT)
3886:(CMOS)
3873:BioFET
3868:BiCMOS
3576:
3566:
3480:
3406:
3396:
3388:
3380:
3325:703393
3323:
3315:
3307:
3258:
3143:
3135:
3108:Nature
3074:
2998:
2990:
2917:
2892:
2859:
2834:
2809:
2772:
2744:
2714:4 July
2710:. 2014
2685:4 July
2649:
2604:
2552:6 July
2465:
2380:
2372:
2335:
2241:
2210:
2185:
2154:
2087:
2065:
2021:
1994:
1969:
1944:
1919:
1888:
1832:
1808:
1753:
1652:
1614:
1581:
1556:
1511:
1442:FinFET
1370:. The
1368:MOSFET
1253:relays
1220:finFET
1201:Fe FET
1140:NOMFET
1121:MESFET
1114:AlGaAs
1031:GAAFET
1027:finFET
1001:BioFET
936:MOSFET
913:
907:
901:
895:
889:
736:In an
702:MOSFET
648:of an
613:, and
601:, and
595:source
514:FinFET
441:MOSFET
209:copper
199:, the
132:MOSFET
99:, and
93:source
45:source
4820:Relay
4793:types
4731:eFUSE
4502:(TWT)
4490:Maser
4481:(IOT)
4470:(CFA)
4459:(BWO)
4383:Diode
4330:SEPIC
4310:Boost
4263:TRIAC
4232:(SCR)
4195:(MOV)
4169:(LEC)
4088:(LED)
4047:(UJT)
4036:(SIT)
4030:(PUT)
3973:(BJT)
3942:(TFT)
3918:LDMOS
3913:ISFET
3352:arXiv
3321:S2CID
3141:S2CID
3044:(PDF)
2996:S2CID
2708:Intel
2704:(PDF)
2378:S2CID
1522:(PDF)
1501:(PDF)
1157:slit.
1142:is a
1005:ISFET
990:ISFET
923:doped
878:Types
838:wafer
769:In a
658:width
633:, or
599:drain
541:holes
373:FeFET
336:wafer
120:holes
101:drain
79:in a
53:drain
4763:Wire
4721:Fuse
4305:Buck
4158:(IC)
4146:DIAC
4082:(LD)
3951:UMOS
3946:VMOS
3863:PMOS
3858:NMOS
3843:MOS
3574:PMID
3478:ISBN
3434:2019
3404:PMID
3386:OCLC
3378:ISSN
3313:OCLC
3305:ISSN
3256:ISBN
3200:2019
3172:2022
3133:PMID
3072:PMID
3026:2019
2988:PMID
2949:2019
2915:ISBN
2890:ISBN
2857:ISBN
2832:ISBN
2807:ISBN
2770:ISBN
2742:ISBN
2716:2019
2687:2019
2647:ISSN
2602:ISBN
2554:2019
2527:2019
2496:2019
2463:ISBN
2438:2019
2410:2019
2370:ISSN
2333:ISBN
2239:ISBN
2208:ISBN
2183:ISBN
2152:ISSN
2063:ISSN
2019:ISBN
1992:ISBN
1967:ISBN
1942:ISBN
1917:ISBN
1886:ISBN
1806:ISBN
1751:ISBN
1682:2019
1650:ISBN
1612:ISBN
1579:ISBN
1554:ISBN
1509:ISBN
1427:CMOS
1372:CMOS
1319:any
1317:cite
1296:Uses
1240:for
1199:The
1192:and
1138:The
1119:The
1102:HEMT
1100:The
1045:The
1040:JFET
1038:The
999:The
988:The
934:The
724:(or
669:and
642:bias
631:bulk
627:base
623:body
619:BJTs
615:base
603:gate
488:and
482:CMOS
449:and
274:and
242:and
207:and
179:and
97:gate
59:The
51:and
49:gate
4325:Ćuk
3564:PMC
3556:doi
3394:PMC
3370:doi
3297:doi
3231:doi
3125:doi
3113:479
3064:doi
3052:127
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