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by removing hydrogen atoms from the silicon surface. The hydrogen-terminated silicon surface is widely used in the fabrication of semiconductor devices. It serves as a precursor for various surface functionalization techniques and is also essential in the formation of silicon-on-insulator (SOI)
173:
Despite its stability, hydrogen-terminated silicon can gradually oxidize when exposed to air, forming a thin oxide layer. This process can be monitored using techniques such as X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM).
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where the surface Si atoms are bonded to hydrogen. The hydrogen-terminated surfaces are hydrophobic, luminescent, and amenable to chemical modification. Hydrogen-terminated silicon is an intermediate in the growth of bulk silicon from
31:: This termination is significant in the semiconductor industry due to its role in preventing oxidation and contamination of silicon surfaces, which is crucial for various applications including microelectronics and nanotechnology.
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The Si-H bond in fact is stronger than the Si-Si bonds. Two kinds of Si-H centers are proposed, both featuring terminal Si-H bonds. One kind of site has one Si-H bond. The other kind of site features
117:. All surface Si atoms are tetrahedral. Hydrogen termination confers stability in ambient environments. So again, the surface is both clean (of oxides) and relatively
148:. Many kinds of organic compounds with various functions can be introduced onto the silicon surface by the hydrosilylation of a hydrogen-terminated surface. The
367:
483:
Blake, Robert B.; Pei, Lei; Yang, Li; Lee, Michael V.; Conley, Hiram J.; Davis, Robert C.; Shirahata, Naoto; Linford, Matthew R. (2008-04-18).
522:
Shinohara, Masanori; Katagiri, Teruaki; Iwatsuji, Keitaro; Matsuda, Yoshinobu; Fujiyama, Hiroshi; Kimura, Yasuo; Niwano, Michio (March 2005).
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Idealized view of Si surface before (top) and after (bottom) treatment with HF. Partially oxidized Si is shown in red, bulk Si in blue.
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Labidi, Hatem; Koleini, Mohammad; Huff, Taleana; Salomons, Mark; Cloutier, Martin; Pitters, Jason; Wolkow, Robert A. (2017-02-13).
183:
244:
Lauerhaas, Jeffrey M.; Sailor, Michael J. (1993). "Chemical
Modification of the Photoluminescence Quenching of Porous Silicon".
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of hydrogen-terminated silicon shows a band near 2090 cm, not very different from νSi-H for organic hydrosilanes.
524:"Oxidation of the hydrogen terminated silicon surfaces by oxygen plasma investigated by in-situ infrared spectroscopy"
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in water, buffered water, or alcohol. One of the relevant reactions is simply removal of silicon oxides:
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205:"Silicon surface passivation by hydrogen termination: A comparative study of preparation methods"
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394:"Indications of chemical bond contrast in AFM images of a hydrogen-terminated silicon surface"
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485:"One‐Step Growth of ca. 2–15 nm Polymer Thin Films on Hydrogen‐Terminated Silicon"
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121:. These materials can be handled in air without special care for several minutes.
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Waltenburg, Hanne
Neergaard; Yates, John (1995). "Surface Chemistry of Silicon".
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One group proposed to use the material to create digital circuits made of
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97:(AFM) has been used to manipulate hydrogen-terminated silicon surfaces.
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Idealized structure of alkene addition to hydrogen-terminated silicon.
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460:"Organic modification of hydrogen terminated silicon surfaces1".
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Patterning and imaging electronic circuits at the atomic level
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Silicon wafers are treated with solutions of electronic-grade
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Fenner, D. B.; Biegelsen, D. K.; Bringans, R. D. (1989).
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Journal of the
Chemical Society, Perkin Transactions 2
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Neergaard
Waltenburg, Hanne; Yates, John (July 1995).
136:, the H-Si groups on the surface react with terminal
87:The key reaction however is the formation of the
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568:Less is more for atomic-scale manufacturing
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489:Macromolecular Rapid Communications
17:Hydrogen-terminated silicon surface
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184:Silanization of silicon and mica
596:from the original on 2021-12-13
575:from the original on 2021-12-13
144:groups. The reaction is called
586:UAlbertaScience (2017-02-13),
565:UAlbertaScience (2016-10-31),
327:"Surface Chemistry of Silicon"
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266:10.1126/science.261.5128.1567
113:Hydrogen termination removes
19:is a chemically passivated
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209:Journal of Applied Physics
169:Stability & Reactivity
540:10.1016/j.tsf.2004.08.054
632:Supramolecular chemistry
95:atomic force microscope
501:10.1002/marc.200700752
156:Potential applications
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398:Nature Communications
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418:10.1038/ncomms14222
410:2017NatCo...814222L
343:10.1021/cr00037a600
312:10.1021/cr00037a600
258:1993Sci...261.1567L
252:(5128): 1567–1568.
221:1989JAP....66..419F
372:www.kurzweilai.net
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150:infrared spectrum
65:hydrofluoric acid
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89:hydrosilane
51:Preparation
39:→ Si + 2
627:Thin films
611:Categories
600:2017-02-22
579:2017-02-22
378:2017-02-22
190:References
101:Properties
617:Materials
548:0040-6090
509:1022-1336
426:2041-1723
404:: 14222.
351:0009-2665
300:Chem. Rev
129:centers.
24:substrate
594:archived
573:archived
444:28194036
282:12722221
274:17798116
178:See also
165:wafers.
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406:Bibcode
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246:Science
217:Bibcode
138:alkenes
21:silicon
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79:+ 2 H
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29:silane
278:S2CID
142:diazo
119:inert
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440:PMID
422:ISSN
347:ISSN
270:PMID
140:and
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225:doi
125:SiH
71:SiO
35:SiH
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