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95:. An n-type to n-type junction, for example, would be considered a homojunction even if the doping levels are different.
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interface that occurs between layers of similar semiconductor material; these materials have equal
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This is not a necessary condition as the only requirement is that the same semiconductor (same
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will be formed at the interface, as shown in the figure to the right.
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for conduction band and valence band in n and p regions (red curves).
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91:) is found on both sides of the junction, in contrast to a
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decreases. Both p and n junctions are doped at a 1e15/cm3
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36:of ~0.59 V. Observe the different
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164:Fundamentals of semiconductor devices
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166:. McGraw-Hill. ISBN 0070722366
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76:doped) semiconductor such as
56:but typically have different
32:level, leading to built-in
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180:Semiconductor structures
162:Yang, Edward S (1978).
131:Doping (semiconductor)
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80:, this is called a
149:Yang 1978, p. 141.
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38:Quasi Fermi levels
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104:depletion region
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20:A homojunction
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93:heterojunction
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126:Band bending
121:p–n junction
100:band bending
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82:p–n junction
46:homojunction
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68:doped) and
22:PN junction
157:References
116:Transistor
54:band gaps
34:potential
174:Category
110:See also
102:, and a
89:band gap
74:acceptor
78:silicon
70:p-type
62:n-type
58:doping
30:doping
137:Notes
66:donor
48:is a
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176::
44:A
72:(
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