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is effectively 100% but is a function of the thickness particularly for near bandedge photons. Like all narrow bandgap materials InSb detectors require periodic recalibrations, increasing the complexity of the imaging system. This added complexity is worthwhile where extreme sensitivity is required,
964:
in 1952, although they were not very pure by today's semiconductor standards. Welker was interested in systematically studying the semiconducting properties of the III-V compounds. He noted how InSb appeared to have a small direct band gap and a very high electron mobility. InSb crystals have been
1139:). Some models suggest that terahertz frequencies are achievable with this material. Indium antimonide semiconductor devices are also capable of operating with voltages under 0.5 V, reducing their power requirements.
748:
715:
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e.g. in long-range military thermal imaging systems. InSb detectors also require cooling, as they have to operate at cryogenic temperatures (typically 80 K). Large arrays (up to 2048×2048
960:
The intermetallic compound was first reported by Liu and
Peretti in 1951, who gave its homogeneity range, structure type, and lattice constant. Polycrystalline ingots of InSb were prepared by
1542:
Alexander-Webber, J. A.; Baker, A. M. R.; Buckle, P. D.; Ashley, T.; Nicholas, R. J. (2012-07-05). "High-current breakdown of the quantum Hall effect and electron heating in InSb/AlInSb".
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InSb has the appearance of dark-grey silvery metal pieces or powder with vitreous lustre. When subjected to temperatures over 500 °C, it melts and decomposes, liberating antimony and
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Indium antimonide was a very common detector in the old, single-detector mechanically scanned thermal imaging systems. Another application is as a
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Avery, D G; Goodwin, D W; Lawson, W D; Moss, T S (1954). "Optical and Photo-Electrical
Properties of Indium Antimonide".
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opened a laboratory at the university to further this research, however Delft later retracted the paper.
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Avery, D G; Goodwin, D W; Rennie, Miss A E (1957). "New infra-red detectors using indium antimonide".
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operating at frequencies up to 85 GHz were constructed from indium antimonide in the late 1990s;
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A layer of indium antimonide sandwiched between layers of aluminium indium antimonide can act as a
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941:. Indium antimonide detectors are sensitive to infrared wavelengths between 1 and 5 μm.
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1387:"Microsoft's new quantum computing lab in Delft opens its doors to a world of possibilities"
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Semiconductors and the
Information Revolution: Magic Crystals that Made IT Happen
1215:(in terms of dynamic switching). This is due to the high carrier mobility of InSb
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1068:(up to 0.7 μm at 300 K) of any known semiconductor, except for
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Except where otherwise noted, data are given for materials in their
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Liu, T.S.; Peretti, E.A. (1951). "The
Lattice Parameter of InSb".
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Rode, D. L. (1971). "Electron
Transport in InSb, InAs, and InP".
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operating at over 200 GHz have been reported more recently (
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InSb can be grown by solidifying a melt from the liquid state (
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InSb is a narrow direct band gap semiconductor with an energy
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grown by slow cooling from liquid melt at least since 1954.
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1119:. This approach is studied in order to construct very fast
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1579:"'Quantum well' transistor promises lean computing"
57:. Unsourced material may be challenged and removed.
1531:(PhD). Cambridge University. uk.bl.ethos.388828.
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1056:InSb possesses the largest ambient-temperature
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1550:(4). American Physical Society (APS): 045404.
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117:Learn how and when to remove this message
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1637:National Compound Semiconductor Roadmap
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1030:InSb infrared detector manufactured by
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1441:Properties of Indium Antimonide (InSb)
473:524 °C (975 °F; 797 K)
225:
1608:CRC Handbook of Chemistry and Physics
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381:Key: WPYVAWXEWQSOGY-UHFFFAOYSA-N
7:
55:adding citations to reliable sources
1352:Proceedings of the Physical Society
265:
1329:. Academic Press. pp. 138–9.
25:
1490:Journal of Scientific Instruments
1060:of 78000 cm/(V⋅s), electron
1605:Haynes, William M., ed. (2016).
1529:High Resolution Infrared Imaging
1218:In some of the detectors of the
1100:are materials with similar use.
1050:and 0.23 eV at 80 K.
847:
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144:
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31:
972:claimed that indium antimonide
843:(at 25 °C , 100 kPa).
42:needs additional citations for
970:Delft University of Technology
423:
1:
2338:Organoantimony(III) compounds
1657:University of Texas at Dallas
1385:Dedezade, Esat (2019-02-21).
449:Dark grey, metallic crystals
2538:Zincblende crystal structure
1391:Microsoft News Centre Europe
1167:. It can also be grown from
968:In 2018, a research team at
2457:Organoantimony(V) compounds
1976:Organoindium(III) compounds
1510:10.1088/0950-7671/34/10/305
1372:10.1088/0370-1301/67/10/304
1268:
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1244:
2554:
1646:Material safety data sheet
1577:Will Knight (2005-02-10).
1564:10.1103/physrevb.86.045404
1411:(1st ed.). New York:
2528:Infrared sensor materials
1740:Organoindium(I) compounds
948:source as it is a strong
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1641:Office of Naval Research
1129:field-effect transistors
785:Precautionary statements
515:mW⋅K⋅cm (at 27 °C)
1475:10.1103/PhysRevB.3.3287
1224:Spitzer Space Telescope
501:mC⋅s⋅g (at 27 °C)
1523:Beckett, M.G. (1995).
1165:molecular beam epitaxy
1035:
18:Indium(III) antimonide
1220:Infrared Array Camera
1029:
1022:Electronic properties
1014:with a 0.648 nm
903:(Sb). It is a narrow-
603:Coordination geometry
595: = 0.648 nm
2523:III-V semiconductors
1325:Orton, J.W. (2009).
1193:photoelectromagnetic
1157:liquid phase epitaxy
507:Thermal conductivity
51:improve this article
1556:2012PhRvB..86d5404A
1502:1957JScI...34..394A
1467:1971PhRvB...3.3287R
1364:1954PPSB...67..761A
1179:Device applications
1149:Czochralski process
1125:Bipolar transistors
1117:quantum Hall effect
995:Physical properties
946:terahertz radiation
888:) is a crystalline
441: g·mol
131:
66:"Indium antimonide"
2088:Antimony compounds
1651:2016-03-03 at the
1282:"Indium Antimonde"
1085:quantum efficiency
1075:Indium antimonide
1036:
978:Majorana zero mode
939:infrared astronomy
920:infrared detectors
910:material from the
870:Infobox references
810:Related compounds
130:Indium antimonide
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1611:(97th ed.).
1544:Physical Review B
1461:(10): 3287–3299.
1455:Physical Review B
1422:978-0-385-54836-6
1409:Quantum Supremacy
1286:American Elements
1203:magnetoresistance
1092:) are available.
1058:electron mobility
1008:crystal structure
985:quantum computing
882:Indium antimonide
878:Chemical compound
876:
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798:Safety data sheet
763:Hazard statements
690:Gibbs free energy
547:Crystal structure
493:Electron mobility
334:CompTox Dashboard
194:Interactive image
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1062:drift velocity
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1786:
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1759:Indium(I,III)
1757:
1747:
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1622:9781498754293
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1599:Cited sources
1598:
1584:
1583:New Scientist
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1197:
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1186:
1185:Thermal image
1183:
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1178:
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1174:
1171:compounds by
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1071:
1067:
1063:
1059:
1055:
1051:
1049:
1045:
1042:of 0.17
1041:
1034:in the 1960s.
1033:
1028:
1021:
1019:
1017:
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1002:
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908:semiconductor
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724:
720:
718:
713:
708:
705:−25.5 kJ·mol
704:
699:
691:
687:
686:
683:−30.5 kJ·mol
682:
674:
666:
660:
659:
656:86.2 J·K·mol
655:
647:
642:
636:
635:
632:49.5 J·K·mol
631:
626:
621:
620:Heat capacity
617:
616:
611:
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107:November 2023
99:
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68: –
67:
63:
62:Find sources:
56:
52:
46:
45:
40:This article
38:
34:
29:
28:
19:
2143:
1803:
1766:
1606:
1586:. Retrieved
1582:
1572:
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1518:
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1489:
1483:
1458:
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1448:
1408:
1405:Kaku, Michio
1399:
1390:
1380:
1355:
1354:. Series B.
1351:
1345:
1326:
1320:
1311:
1307:
1301:
1289:. Retrieved
1276:
1264:
1259:, pp. 12.156
1252:
1146:
1107:. In such a
1105:quantum well
1102:
1081:photovoltaic
1074:
1052:
1046:at 300
1037:
1005:
998:
967:
959:
950:photo-Dember
943:
922:, including
885:
881:
880:
804:External SDS
754:
716:
697:
672:
645:
624:
608:Tetrahedral
592:
577:
573:
566:
525:
287:RTECS number
153:Identifiers
113:
104:
94:
87:
80:
73:
61:
49:Please help
44:verification
41:
2513:Antimonides
2096:Antimonides
1782:Indium(III)
1525:"3. Camera"
1496:(10): 394.
1358:(10): 761.
1213:transistors
1207:Hall effect
1189:photodiodes
1153:epitaxially
1121:transistors
983:for use in
749:Signal word
561:Space group
446:Appearance
411:Properties
232:100.013.812
2507:Categories
1588:2020-01-11
1443:. ioffe.ru
1308:Trans AIME
1271:, pp. 5.22
1230:References
1077:photodiode
1012:zincblende
728:Pictograms
553:Zincblende
540:Structure
434:Molar mass
312:CVZ50C0S9O
205:ChemSpider
181:3D model (
160:CAS Number
77:newspapers
2382:Sb(III,V)
1700:Indium(I)
1613:CRC Press
1413:Doubleday
1247:, p. 4.66
1195:detectors
989:Microsoft
974:nanowires
952:emitter.
930:systems,
926:cameras,
899:(In) and
719:labelling
665:formation
639:Std molar
323:UN number
294:NL1105000
253:215-192-3
245:EC Number
170:1312-41-0
1649:Archived
1407:(2023).
1291:June 20,
1040:band gap
1003:vapors.
901:antimony
894:elements
890:compound
710:Hazards
479:Band gap
2173:Sb(III)
1639:at the
1552:Bibcode
1498:Bibcode
1463:Bibcode
1360:Bibcode
1222:on the
1205:or the
1137:QinetiQ
1054:Undoped
1032:Mullard
956:History
863:what is
861: (
755:Warning
693:(Δ
641:entropy
455:Density
439:236.578
276:3468413
263:PubChem
214:2709929
91:scholar
1870:In(ClO
1849:In(OH)
1619:
1419:
1333:
1314:: 791.
1269:Haynes
1257:Haynes
1245:Haynes
1151:), or
1113:AlInSb
1094:HgCdTe
1090:pixels
1064:, and
897:indium
858:verify
855:
818:anions
816:Other
800:(SDS)
513:
499:
485:
461:
459:5.7747
395:SMILES
93:
86:
79:
72:
64:
2465:Sb(CH
2405:Sb(V)
2346:Sb(CH
2036:In(CH
1983:In(CH
1947:In(NO
1211:Fast
1173:MOVPE
1133:Intel
1111:InSb/
463:g⋅cm
370:InChI
327:1549
183:JSmol
98:JSTOR
84:books
2477:Sb(C
2412:SbCl
2358:Sb(C
2232:(OH)
2208:SbCl
2188:Sb(C
2180:SbBr
2164:ZnSb
2154:SmSb
2149:PrSb
2144:InSb
2136:HoSb
2131:HoSb
2126:GaSb
2121:DySb
2104:AlSb
2019:In(C
1997:In(C
1987:COO)
1825:InBr
1817:InCl
1804:InSb
1799:InAs
1773:InSe
1712:InCl
1707:InBr
1617:ISBN
1417:ISBN
1331:ISBN
1293:2019
1098:PtSi
1096:and
1006:The
928:FLIR
886:InSb
791:P273
777:H411
773:H332
769:H302
483:0.17
303:UNII
70:news
2420:SbF
2297:(SO
2264:SbN
2256:SbI
2248:SbH
2236:(NO
2216:SbF
2159:YSb
2111:1-x
1965:1−x
1934:(SO
1841:InH
1833:InI
1809:InF
1794:InP
1789:InN
1717:InI
1655:at
1560:doi
1506:doi
1471:doi
1368:doi
1312:191
1191:or
1163:or
1155:by
1010:is
912:III
905:gap
717:GHS
676:298
649:298
511:180
497:7.7
487:eV
339:EPA
266:CID
53:by
2509::
2440:Sb
2428:Sb
2389:Sb
2325:Te
2321:Sb
2313:Se
2309:Sb
2293:Sb
2281:Sb
2269:Sb
2224:Sb
2113:Sb
2109:Bi
1963:Ga
1959:In
1930:In
1921:Te
1917:In
1909:Se
1905:In
1893:In
1857:In
1767:In
1727:SO
1723:In
1615:.
1581:.
1558:.
1548:86
1546:.
1527:.
1504:.
1494:34
1492:.
1469:.
1457:.
1431:^
1389:.
1366:.
1356:67
1310:.
1284:.
1237:^
1175:.
1159:,
1123:.
1072:.
1044:eV
1018:.
987:;
775:,
771:,
721::
668:(Δ
578:3m
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535:4
427:Sb
424:In
2487:5
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2483:5
2481:H
2479:6
2471:5
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2467:3
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2444:S
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2432:O
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2025:5
2023:H
2021:2
2011:3
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2007:2
2005:O
2003:7
2001:H
1999:5
1989:3
1985:3
1967:N
1961:x
1953:3
1951:)
1949:3
1940:3
1938:)
1936:4
1932:2
1923:3
1919:2
1911:3
1907:2
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