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He worked at liquid nitrogen temperature, where much less of the recombination energy is lost to nonradiative processes than at room temperature, and observed peak emission close to the band gaps of the compounds, confirming that the light was recombination radiation. His LEDs emitted enough infrared light to play music from a phonograph record, but the light wasn't visible, and scientists' interest in GaAs remained mainly focused on fast electronic devices.
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180:(UCLA), where he remained for the rest of his career. His research there continued his RCA work with optoelectronic properties of semiconductors as well as contributions related to the optical properties of highly transparent materials such as tungstate glasses. Some of Braunstein's work was theoretical, including the proposal that neutral atoms could be scattered by a sufficiently intense
173:(particles of light) with some minimum energy are absorbed by a given semiconductor. For very high intensity beams of light, two photons, each with half that minimum energy, can be absorbed simultaneously. He also published highly cited foundation papers on the electronic, optical, and vibrational properties of III-V semiconductors, silicon, and germanium.
165:, which was among the most active industrial laboratories at the time. In the following decade at RCA Laboratories he published broadly on semiconductor physics and technology. Beyond his seminal work with light emission from III-V semiconductors, in 1964 he exploited newly invented lasers to publish the first paper on
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Braunstein had set up a simple optical communications link: Music emerging from a record player was used via suitable electronics to modulate the forward current of a GaAs diode. The emitted light was detected by a PbS diode some distance away. This signal was fed into an audio amplifier and played
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In 1955, Rubin
Braunstein was the first to observe emission from gallium arsenide and two other III-V compounds—indium phosphide and gallium antimonide—at RCA Laboratories in Princeton, N.J.. His LEDs were Schottky diodes formed by point contacts or silver paint; junction diodes were not available.
142:(1922–2018) was an American physicist and educator. In 1955 he published the first measurements of light emission by semiconductor diodes made from crystals of gallium arsenide (GaAs), gallium antimonide (GaSb), and indium phosphide (InP). GaAs, GaSb, and InP are examples of
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of light. Since light is an electromagnetic wave, it had long been known that charged particles like electrons would be scattered. The effect with neutral atoms is much weaker, but was finally observed nearly 20 years after the proposal of
Braunstein and his co-authors.
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Braunstein reported on the observation of infrared emission from simple diodes constructed from gallium arsenide (GaAs), gallium antimonide (GaSb), and gallium phosphide (GaP) at room temperature and at 77 K. The first
280:(IR) LEDs made from III-V semiconductors dates back to 1955 when Braunstein (1955) reported the first electroluminescence from n-type GaAs and n-type GaSb. Braunstein's LEDs were inefficient, not based on a
638:, whose office at RCA adjoined Braunstein's and who later won the Nobel Prize in Physics, has told an anecdote about Braunstein's early use of an infrared emitting GaAs diode to transmit information. See
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146:. The III-V semiconductors absorb and emit light much more strongly than silicon, which is the best-known semiconductor. Braunstein's devices are the forerunners of contemporary
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Vaidyanathan, A.; Walker, T.; Guenther, A. H.; Mitra, S. S.; Narducci, L. M. (15 January 1980). "Two-photon absorption in several direct-gap crystals".
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back by a loudspeaker. Intercepting the beam stopped the music. We had a great deal of fun playing with this setup.
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LED patent, however, was awarded in 1961 to Robert Biard and Gary
Pittman from Texas Instruments ...
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Kroemer, Herbert (Sep 16, 2013). "The Double-Heterostructure
Concept: How It Got Started".
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junction, and instead based on a rectifying metal-semiconductor contact (Schottky contact).
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and semiconductor lasers, which typically employ III-V semiconductors. The 2000 and 2014
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Braunstein, R.; Ockman, N. (20 April 1964). "Optical Double-Photon
Absorption in CdS".
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Several papers by
Braunstein and his colleagues are used as original references.
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Braunstein was raised in New York City. He earned a doctorate in physics from
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Gould, Phillip L.; Ruff, George A.; Pritchard, David E. (February 24, 1986).
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496:"Diffraction of Atoms by Light: The Near-Resonant Kapitza-Dirac Effect"
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Braunstein, Rubin (1955). "Radiative
Transitions in Semiconductors".
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were awarded for further advances in closely related fields.
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in 1954. He then joined the research laboratory of the
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In 1964 Braunstein became a professor of physics at
675:"Palisadian Rubin Braunstein's LED Discovery Cited"
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359:"How America Lighted the Way for a Japanese Nobel"
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333:"The Breakthrough Birth of the Diode Laser"
188:Braunstein was selected as a Fellow of the
31:American physicist and educator (1922–2018)
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264:. Cambridge University Press. p. 2.
700:Fellows of the American Physical Society
625:Rubin Braunstein describing work at RCA
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442:Semiconductor Physics: An Introduction
417:(3 ed.). Springer. p. 473.
178:University of California, Los Angeles
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20:Prof. Rubin Braunstein UCLA Emeritus
357:Gross, Benjamin (October 9, 2014).
229:. Dignity Memorial. June 12, 2018.
207:List of Syracuse University people
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673:Pascoe, Sue (November 19, 2014).
82:Syracuse University, Ph.D. (1954)
735:20th-century American physicists
411:von Klingshirn, Claus (2007).
299:Understanding LED Illumination
1:
710:Light-emitting diode pioneers
105:semiconductor physics, optics
202:Light-emitting diode#History
544:. American Physical Society
337:Optics & Photonics News
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715:Syracuse University alumni
654:10.1109/JPROC.2013.2274914
520:10.1103/PhysRevLett.56.827
438:Seeger, Karlheinz (1982).
258:Schubert, E. Fred (2003).
331:Hecht, Jeff (July 2007).
302:. CRC Press. p. 29.
190:American Physical Society
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705:Semiconductor physicists
617:10.1103/PhysRev.134.A499
446:(2 ed.). Springer.
642:Proceedings of the IEEE
588:10.1103/PhysRev.99.1892
500:Physical Review Letters
398:10.1103/PhysRevB.21.743
363:The Wall Street Journal
152:Nobel Prizes in Physics
479:. UCLA. Archived from
296:Khan, M. Nisa (2013).
243:. UCLA. Archived from
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261:Light-Emitting Diodes
167:two-photon absorption
90:Jacqueline Braunstein
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542:"APS Fellow Archive"
414:Semiconductor Optics
144:III-V semiconductors
609:1964PhRv..134..499B
580:1955PhRv...99.1892B
512:1986PhRvL..56..827G
390:1980PhRvB..21..743V
159:Syracuse University
483:on March 11, 2011.
477:"Rubin Braunstein"
241:"Rubin Braunstein"
227:"Rubin Braunstein"
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96:Scientific career
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68:(2018-06-09)
66:June 9, 2018
730:2018 deaths
725:1922 births
54:May 6, 1922
694:Categories
548:2019-04-03
462:1086541248
384:(2): 743.
213:References
50:1922-05-06
192:in 1964.
79:Education
528:10033296
317:infrared
278:infrared
196:See also
662:2554978
630:YouTube
605:Bibcode
576:Bibcode
508:Bibcode
386:Bibcode
171:photons
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102:Fields
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658:S2CID
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458:OCLC
448:ISBN
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304:ISBN
266:ISBN
118:UCLA
63:Died
44:Born
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Text is available under the Creative Commons Attribution-ShareAlike License. Additional terms may apply.
