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monitoring of epitaxial growth or the interaction of surfaces with adsorbates. To assign specific features in the signal to their origin in morphology and electronic structure, theoretical modelling by
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May, M. M.; Lewerenz, H.-J.; Hannappel, T. (2014), "Optical in situ Study of InP(100) Surface
Chemistry: Dissociative Adsorption of Water and Oxygen",
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Aspnes, D. E.; Studna, A. A. (1985), "Anisotropies in the Above-Band-Gap
Optical Spectra of Cubic Semiconductors",
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Richter, W.; Zettler, J.-T. (1996), "Real-time analysis of III--V-semiconductor epitaxial growth",
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Weightman, P; Martin, D S; Cole, R J; Farrell, T (2005), "Reflection anisotropy spectroscopy",
137:{\displaystyle RDS=2{\frac {r_{\alpha }-r_{\beta }}{r_{\alpha }+r_{\beta }}},r\in \mathbb {C} }
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The method was introduced in 1985 for the study optical properties of the
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that are shone in normal incident on a surface with different
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Peter Y. Yu, Manuel
Cardona ,"Fundamentals of Semiconductors"
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are the reflectance in two different polarizations.
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221:, its use has been expanded to
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358:10.1016/0169-4332(96)00321-2
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166:{\displaystyle r_{\alpha }}
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480:Analytical chemistry stubs
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193:{\displaystyle r_{\beta }}
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475:Scientific techniques
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215:germanium
186:β
159:α
127:∈
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286:94037903
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266:Bibcode
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