367:
for that population as at-risk outliers not suitable for high reliability applications. Tester-based Parts
Average Testing varieties include Parametric Parts Average Testing (P-PAT) and Geographical Parts Average Testing (G-PAT), among others. Inline Parts Average Testing (I-PAT) uses data from production process control inspection and metrology to perform the outlier recognition function.
22:
121:
63:
366:
Q100 and Q101 stress qualifications. Parts
Average Testing is a statistical method for recognizing and quarantining semiconductor die that have a higher probability of reliability failures. This technique identifies characteristics that are within specification but outside of a normal distribution
201:
devices are very sensitive to impurities and particles. Therefore, to manufacture these devices it is necessary to manage many processes while accurately controlling the level of impurities and particles. The finished product quality depends upon the many layered relationship of each interacting
361:
tests the packaged device, often pre-, and post burn-in for a set of parameters that assure operation. Process and design weaknesses are identified by applying a set of stress tests in the qualification phase of the semiconductors before their market introduction e. g. according to the
370:
Bond strength measurement is performed in two basic types: pull testing and shear testing. Both can be done destructively, which is more common, or non destructively. Non destructive tests are normally used when extreme reliability is required such as in military or aerospace applications.
239:, semiconductor products are manufactured in high volume. Furthermore, repair of finished semiconductor products is impractical. Therefore, incorporation of reliability at the design stage and reduction of variation in the production stage have become essential.
587:"D.W. Price and R.J. Rathert (KLA-Tencor Corp.). "Best Known Methods for Latent Reliability Defect Control in 90nm – 14nm Semiconductor Fabs". Nineteenth Annual Automotive Electronics Reliability Workshop. Novi, Michigan. April 2017"
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MIL-STD-1686B Electrostatic
Discharge Control Program for Protection of Electrical and Electronic Parts, Assemblies and Equipment (Excluding Electrically Initiated Explosive Devices)
139:
679:
242:
Reliability of semiconductor devices may depend on assembly, use, environmental, and cooling conditions. Stress factors affecting device reliability include
35:
796:
224:
Due to the rapid advances in technology, many new devices are developed using new materials and processes, and design calendar time is limited due to
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of a semiconductor device is the ability of the device to perform its intended function during the life of the device in the field.
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723:
Akbari, Mohsen; Tavakoli Bina, Mohammad; Bahman, Amir Sajjad; Eskandari, Bahman; Pouresmaeil, Edris; Blaabjerg, Frede (2021).
363:
660:
MIL-HDBK-781 Reliability Test
Methods, Plans and Environments for Engineering Development, Qualification and Production
760:"Thermal modeling of wire-bonded power modules considering non-uniform temperature and electric current interactions"
688:
642:
MIL-HDBK-H 108 Sampling
Procedures and Tables for Life and Reliability Testing (Based on Exponential Distribution)
225:
194:
There are multiple considerations that need to be accounted for when developing reliable semiconductor devices:
503:
Other
Temperature Effects—Accelerated Aging, Increased Electro-migration with temperature, Increased Burn-Out
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concerns. Consequently, it is not possible to base new designs on the reliability of existing devices.
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357:) tests the semiconductor die, prior to packaging, via micro-probes connected to test equipment.
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725:"An Extended Multilayer Thermal Model for Multichip IGBT Modules Considering Thermal Aging"
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MIL-STD-1629A Procedures for
Performing a Failure Mode, Effects, and Criticality Analysis
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420:
Package molding contamination—impurities in packaging compounds cause electrical failure
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Failure mechanisms of electronic semiconductor devices fall in the following categories
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Hydrogen effects – Hydrogen induced breakdown of portions of the circuit (Metal)
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Akbari, M.; Bahman, A.S.; Reigosa, P.D.; Iannuzzo, F.; Bina, M.T. (September 2018).
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221:. It is also necessary to analyze surface phenomena from the aspect of thin films.
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353:(short term operation at extremes) and probe and test reduce escapes. Probe (
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MIL-STD-1543B Reliability
Program Requirements for Space and Missile Systems
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271:
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MIL-STD-2164 Environment Stress
Screening Process for Electronic Equipment
481:– manufacturing defect—screenable with Scanning Acoustic Microscopy.
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Humidity effects – moisture absorption by the package and circuit
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MIL-STD-721C Definition of Terms for
Reliability and Maintainability
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Reliability of semiconductors is kept high through several methods.
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MIL-HDBK-344 Environmental Stress Screening of Electronic Equipment
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Hot Electron Trapping – due to overdrive in power RF circuits
433:– electrically induced movement of the materials in the chip
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and must be fully understood as they apply to metallization and
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Solder joint failure by creep fatigue or intermetallics cracks.
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MIL-HDBK-217F Reliability Prediction of Electronic Equipment
621:
Reliability of Electronic Packages and Semiconductor Devices
487:
Die-pad/molding compound delamination due to thermal cycling
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Design factors affecting semiconductor reliability include:
672:
MIL-STD-2074 Failure Classification for Reliability Testing
474:– due to mis-match of thermal expansion coefficients
687:. Renesas Technology Corp. 31 August 2006. Archived from
651:
MIL-STD-690C Failure Rate Sampling Plans and Procedures
135:
80:
639:
MIL-HDBK-251 Reliability/Design Thermal Applications
645:
MIL-HDBK-338 Electronic Reliability Design Handbook
130:
may be too technical for most readers to understand
657:MIL-STD-756B Reliability Modeling and Prediction
628:A. Christou & B.A. Unger (Dec 31, 1989),
8:
392:Environmentally induced failure mechanisms.
50:Learn how and when to remove these messages
492:Environmentally induced failure mechanisms
202:substance in the semiconductor, including
740:
176:Learn how and when to remove this message
158:Learn how and when to remove this message
142:, without removing the technical details.
103:Learn how and when to remove this message
389:Mechanically induced failure mechanisms.
383:Material-interaction-induced mechanisms.
712:"Reliability Standards & Handbooks"
550:
465:Mechanically induced failure mechanisms
397:Material-interaction-induced mechanisms
604:. Global SMT & Packaging magazine.
213:The problems of micro-processes, and
140:make it understandable to non-experts
7:
701:"Basic Failure Modes and Mechanisms"
436:Burnout – localized overstress
534:List of materials-testing resources
681:Semiconductor Reliability Handbook
539:List of materials analysis methods
14:
619:Giulio Di Giacomo (Dec 1, 1996),
425:Stress-induced failure mechanisms
31:This article has multiple issues.
797:Semiconductor device fabrication
630:Semiconductor Device Reliability
446:, High Electro-Magnetic Fields (
119:
61:
20:
208:list of semiconductor materials
39:or discuss these issues on the
772:10.1016/j.microrel.2018.07.150
1:
764:Microelectronics Reliability
742:10.1109/ACCESS.2021.3083063
813:
442:Electrical Stress –
386:Stress-induced mechanisms.
349:controls processing, and
226:non-recurring engineering
600:Sykes, Bob (June 2010).
317:; logic timing margins (
75:may need to be rewritten
632:, NATO Science Series E
444:Electrostatic discharge
403:Field-effect transistor
337:Methods of improvement
417:Surface-state effects
766:. 88–90: 1135–1140.
345:control impurities,
718:on 8 November 2005.
694:on 1 December 2006.
414:Channel degradation
286:, and intensity of
405:gate-metal sinking
375:Failure mechanisms
228:constraints, plus
602:"Why test bonds?"
268:mechanical stress
250:, contamination,
206:, chip material (
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431:Electromigration
319:logic simulation
237:economy of scale
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347:process control
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323:timing analysis
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355:wafer prober
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219:wire bonding
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148:October 2017
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93:October 2017
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79:Please help
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72:lead section
47:
40:
34:
33:Please help
30:
729:IEEE Access
699:Kayali, S.
477:Die-attach
459:overcurrent
455:overvoltage
411:degradation
327:temperature
260:temperature
235:To achieve
189:Reliability
570:"AEC Q001"
545:References
359:Final test
343:Cleanrooms
292:electrical
215:thin films
36:improve it
751:235455172
524:Cleanroom
280:radiation
272:vibration
258:density,
42:talk page
791:Category
780:53529098
508:See also
472:fracture
452:Latch-up
311:derating
288:magnetic
284:pressure
264:humidity
529:Burn-in
351:burn-in
308:current
300:voltage
294:fields.
256:current
252:voltage
134:Please
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306:, and
776:S2CID
747:S2CID
704:(PDF)
692:(PDF)
685:(PDF)
573:(PDF)
479:voids
304:power
276:shock
470:Die
448:HIRF
290:and
248:dust
768:doi
737:doi
450:),
364:AEC
321:);
244:gas
138:to
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