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Wang, P.-F.; Lin, X.; Liu, L.; Sun, Q.-Q.; Zhou, P.; Liu, X.-Y.; Liu, W.; Gong, Y.; Zhang, D. W. (2013). "A Semi-Floating Gate Transistor for Low-Voltage Ultrafast Memory and Sensing Operation".
338: 348: 319: 343: 181: 86: 74: 106: 312: 358: 353: 153: 94: 363: 277: 305: 217: 51: 32: 241: 233: 119: 289: 225: 110: 221: 332: 245: 182:"Researchers speed up transistors by embedding tunneling field-effect transistor" 229: 41: 237: 21: 186: 114: 132: 285: 98: 102: 264: 15: 293: 46: 36: 117:. The related research paper was published on 313: 8: 320: 306: 339:Manufacturing companies based in Suzhou 144: 71:Suzhou Oriental Semiconductor Co., Ltd 7: 274: 272: 93:), was founded in 2008, located in 292:. You can help Knowledge (XXG) by 14: 349:Semiconductor companies of China 276: 105:. It invented the world's first 20: 90: 78: 1: 107:semi-floating gate transistor 180:Bob, Yirka (9 August 2013). 380: 271: 154: 230:10.1126/science.1240961 35:, as no other articles 344:Suzhou Industrial Park 288:-related article is a 83:Oriental Semiconductor 222:2013Sci...341..640W 123:on August 9, 2013. 152:吴秋华 (2009-07-25). 81:), abbreviated as 54:for suggestions. 44:to this page from 301: 300: 68: 67: 371: 322: 315: 308: 280: 273: 268: 267: 265:Official website 250: 249: 205: 199: 198: 196: 194: 177: 171: 170: 168: 167: 149: 111:Fudan University 92: 80: 63: 60: 49: 47:related articles 24: 16: 379: 378: 374: 373: 372: 370: 369: 368: 329: 328: 327: 326: 263: 262: 259: 254: 253: 216:(6146): 640–3. 207: 206: 202: 192: 190: 179: 178: 174: 165: 163: 156: 151: 150: 146: 141: 129: 64: 58: 55: 45: 42:introduce links 25: 12: 11: 5: 377: 375: 367: 366: 361: 359:2008 in Suzhou 356: 354:Chinese brands 351: 346: 341: 331: 330: 325: 324: 317: 310: 302: 299: 298: 281: 270: 269: 258: 257:External links 255: 252: 251: 200: 172: 143: 142: 140: 137: 136: 135: 128: 125: 66: 65: 52:Find link tool 28: 26: 19: 13: 10: 9: 6: 4: 3: 2: 376: 365: 362: 360: 357: 355: 352: 350: 347: 345: 342: 340: 337: 336: 334: 323: 318: 316: 311: 309: 304: 303: 297: 295: 291: 287: 282: 279: 275: 266: 261: 260: 256: 247: 243: 239: 235: 231: 227: 223: 219: 215: 211: 204: 201: 189: 188: 183: 176: 173: 161: 157: 148: 145: 138: 134: 131: 130: 126: 124: 122: 121: 116: 112: 108: 104: 100: 96: 88: 84: 76: 72: 62: 59:December 2015 53: 48: 43: 39: 38: 34: 29:This article 27: 23: 18: 17: 364:Suzhou stubs 294:expanding it 283: 213: 209: 203: 191:. Retrieved 185: 175: 164:. Retrieved 162:(in Chinese) 159: 155:创意到创业“天使”来搭桥 147: 118: 109:(SFGT) with 82: 70: 69: 56: 30: 79:苏州东微半导体有限公司 333:Categories 166:2013-08-13 139:References 50:; try the 37:link to it 246:206550093 193:13 August 40:. Please 238:23929978 187:Phys.org 127:See also 115:Shanghai 218:Bibcode 210:Science 133:FJG RAM 120:Science 87:Chinese 75:Chinese 286:Suzhou 244:  236:  99:Suzhou 89:: 77:: 33:orphan 31:is an 284:This 242:S2CID 103:China 91:东微半导体 290:stub 234:PMID 195:2013 160:苏州日报 226:doi 214:341 113:in 95:SIP 335:: 240:. 232:. 224:. 212:. 184:. 158:. 101:, 97:, 321:e 314:t 307:v 296:. 248:. 228:: 220:: 197:. 169:. 85:( 73:( 61:) 57:(

Index


orphan
link to it
introduce links
related articles
Find link tool
Chinese
Chinese
SIP
Suzhou
China
semi-floating gate transistor
Fudan University
Shanghai
Science
FJG RAM
创意到创业“天使”来搭桥
"Researchers speed up transistors by embedding tunneling field-effect transistor"
Phys.org
Bibcode
2013Sci...341..640W
doi
10.1126/science.1240961
PMID
23929978
S2CID
206550093
Official website
Stub icon
Suzhou

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