278:
22:
208:
Wang, P.-F.; Lin, X.; Liu, L.; Sun, Q.-Q.; Zhou, P.; Liu, X.-Y.; Liu, W.; Gong, Y.; Zhang, D. W. (2013). "A Semi-Floating Gate
Transistor for Low-Voltage Ultrafast Memory and Sensing Operation".
338:
348:
319:
343:
181:
86:
74:
106:
312:
358:
353:
153:
94:
363:
277:
305:
217:
51:
32:
241:
233:
119:
289:
225:
110:
221:
332:
245:
182:"Researchers speed up transistors by embedding tunneling field-effect transistor"
229:
41:
237:
21:
186:
114:
132:
285:
98:
102:
264:
15:
293:
46:
36:
117:. The related research paper was published on
313:
8:
320:
306:
339:Manufacturing companies based in Suzhou
144:
71:Suzhou Oriental Semiconductor Co., Ltd
7:
274:
272:
93:), was founded in 2008, located in
292:. You can help Knowledge (XXG) by
14:
349:Semiconductor companies of China
276:
105:. It invented the world's first
20:
90:
78:
1:
107:semi-floating gate transistor
180:Bob, Yirka (9 August 2013).
380:
271:
154:
230:10.1126/science.1240961
35:, as no other articles
344:Suzhou Industrial Park
288:-related article is a
83:Oriental Semiconductor
222:2013Sci...341..640W
123:on August 9, 2013.
152:吴秋华 (2009-07-25).
81:), abbreviated as
54:for suggestions.
44:to this page from
301:
300:
68:
67:
371:
322:
315:
308:
280:
273:
268:
267:
265:Official website
250:
249:
205:
199:
198:
196:
194:
177:
171:
170:
168:
167:
149:
111:Fudan University
92:
80:
63:
60:
49:
47:related articles
24:
16:
379:
378:
374:
373:
372:
370:
369:
368:
329:
328:
327:
326:
263:
262:
259:
254:
253:
216:(6146): 640–3.
207:
206:
202:
192:
190:
179:
178:
174:
165:
163:
156:
151:
150:
146:
141:
129:
64:
58:
55:
45:
42:introduce links
25:
12:
11:
5:
377:
375:
367:
366:
361:
359:2008 in Suzhou
356:
354:Chinese brands
351:
346:
341:
331:
330:
325:
324:
317:
310:
302:
299:
298:
281:
270:
269:
258:
257:External links
255:
252:
251:
200:
172:
143:
142:
140:
137:
136:
135:
128:
125:
66:
65:
52:Find link tool
28:
26:
19:
13:
10:
9:
6:
4:
3:
2:
376:
365:
362:
360:
357:
355:
352:
350:
347:
345:
342:
340:
337:
336:
334:
323:
318:
316:
311:
309:
304:
303:
297:
295:
291:
287:
282:
279:
275:
266:
261:
260:
256:
247:
243:
239:
235:
231:
227:
223:
219:
215:
211:
204:
201:
189:
188:
183:
176:
173:
161:
157:
148:
145:
138:
134:
131:
130:
126:
124:
122:
121:
116:
112:
108:
104:
100:
96:
88:
84:
76:
72:
62:
59:December 2015
53:
48:
43:
39:
38:
34:
29:This article
27:
23:
18:
17:
364:Suzhou stubs
294:expanding it
283:
213:
209:
203:
191:. Retrieved
185:
175:
164:. Retrieved
162:(in Chinese)
159:
155:创意到创业“天使”来搭桥
147:
118:
109:(SFGT) with
82:
70:
69:
56:
30:
79:苏州东微半导体有限公司
333:Categories
166:2013-08-13
139:References
50:; try the
37:link to it
246:206550093
193:13 August
40:. Please
238:23929978
187:Phys.org
127:See also
115:Shanghai
218:Bibcode
210:Science
133:FJG RAM
120:Science
87:Chinese
75:Chinese
286:Suzhou
244:
236:
99:Suzhou
89::
77::
33:orphan
31:is an
284:This
242:S2CID
103:China
91:东微半导体
290:stub
234:PMID
195:2013
160:苏州日报
226:doi
214:341
113:in
95:SIP
335::
240:.
232:.
224:.
212:.
184:.
158:.
101:,
97:,
321:e
314:t
307:v
296:.
248:.
228::
220::
197:.
169:.
85:(
73:(
61:)
57:(
Text is available under the Creative Commons Attribution-ShareAlike License. Additional terms may apply.