2495:
However, there have been certain procedures that have been performed and studied that could potentially yield methods that use lower temperatures to help manufacture graphene. More specifically this different approach to graphene growth has been observed to produce graphene within a temperature environment of around 750 °C. This method entails the combination of certain methods like chemical vapor deposition (CVD) and surface segregation. And when it comes to the substrate, the procedure would consist of coating a SiC substrate with thin films of a transition metal. And after the rapid heat treating of this substance, the carbon atoms would then become more abundant at the surface interface of the transition metal film which would then yield graphene. And this process was found to yield graphene layers that were more continuous throughout the substrate surface.
2302:. One of the reasons for this investigation is that, Zircaloy experiences hydrogen embrittlement as a consequence of the corrosion reaction with water. This produces a reduction in fracture toughness with increasing volumetric fraction of radial hydrides. This phenomenon increases drastically with increasing temperature to the detriment of the material. Silicon carbide cladding does not experience this same mechanical degradation, but instead retains strength properties with increasing temperature. The composite consists of SiC fibers wrapped around a SiC inner layer and surrounded by an SiC outer layer. Problems have been reported with the ability to join the pieces of the SiC composite.
1310:
1663:
7762:
1727:
328:
193:
531:
2311:
925:
8991:
678:
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1823:
8955:
47:
1117:
1044:
7753:
1279:
1270:
1109:
8979:
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1321:, silicon carbide in a glassy amorphous form is also produced. The polymorphism of SiC is characterized by a large family of similar crystalline structures called polytypes. They are variations of the same chemical compound that are identical in two dimensions and differ in the third. Thus, they can be viewed as layers stacked in a certain sequence.
778:
1288:
683:
2188:
2358:, sharper facets, and good resilience. Loose moissanite stones may be placed directly into wax ring moulds for lost-wax casting, as can diamond, as moissanite remains undamaged by temperatures up to 1,800 °C (3,270 °F). Moissanite has become popular as a diamond substitute, and may be misidentified as diamond, since its
2105:
1168:. Colorless, pale yellow and green crystals have the highest purity and are found closest to the resistor. The color changes to blue and black at greater distance from the resistor, and these darker crystals are less pure. Nitrogen and aluminium are common impurities, and they affect the electrical conductivity of SiC.
1649:, as is 6H-SiC:B. Thus the superconducting properties seem to depend more on dopant (B vs. Al) than on polytype (3C- vs 6H-). In an attempt to explain this dependence, it was noted that B substitutes at C sites in SiC, but Al substitutes at Si sites. Therefore, Al and B "see" different environments, in both polytypes.
2494:
When it comes to understanding how or when to use these methods of graphene production, most of them mainly produce or grow this graphene on the SiC within a growth enabling environment. It is utilized most often at rather higher temperatures (such as 1,300 °C) because of SiC thermal properties.
2482:
Another way of growing graphene would be thermally decomposing SiC at a high temperature within a vacuum. But, this method turns out to yield graphene layers that contain smaller grains within the layers. So, there have been efforts to improve the quality and yield of graphene. One such method is to
2018:
A major problem for SiC commercialization has been the elimination of defects: edge dislocations, screw dislocations (both hollow and closed core), triangular defects and basal plane dislocations. As a result, devices made of SiC crystals initially displayed poor reverse blocking performance, though
2534:
Silicon carbide is used in the manufacturing of fishing guides because of its durability and wear resistance. Silicon
Carbide rings are fit into a guide frame, typically made from stainless steel or titanium which keep the line from touching the rod blank. The rings provide a low friction surface
2478:
When it comes to its production, silicon is used primarily as a substrate to grow the graphene. But there are actually several methods that can be used to grow the graphene on the silicon carbide. The confinement controlled sublimation (CCS) growth method consists of a SiC chip that is heated under
2096:
chips rated for 650 volts each. Silicon carbide in this instance gave Tesla a significant advantage over chips made of silicon in terms of size and weight. A number of automobile manufacturers are planning to incorporate silicon carbide into power electronic devices in their products. A significant
2490:
of silicon terminated SiC in an atmosphere consisting of argon. This method has proved to yield layers of graphene with larger domain sizes than the layer that would be attainable via other methods. This new method can be very viable to make higher quality graphene for a multitude of technological
1838:, as they are able to withstand extreme temperatures. The silicon reacts with the graphite in the carbon-carbon composite to become carbon-fiber-reinforced silicon carbide (C/SiC). These brake disks are used on some road-going sports cars, supercars, as well as other performance cars including the
2201:
Silicon carbide fibers are used to measure gas temperatures in an optical technique called thin-filament pyrometry. It involves the placement of a thin filament in a hot gas stream. Radiative emissions from the filament can be correlated with filament temperature. Filaments are SiC fibers with a
1946:
and rendered conductive when lightning raises the voltage of the power line conductor, thus effectively connecting the SiC column between the power conductor and the earth. Spark gaps used in lightning arresters are unreliable, either failing to strike an arc when needed or failing to turn off
2511:. Such a device is a fundamental resource for many emerging applications of quantum information science. If one pumps a color center via an external optical source or electric current, the color center will be brought to the excited state and then relax with the emission of one photon.
1933:
to the line raises the line voltage sufficiently, the SiC column will conduct, allowing strike current to pass harmlessly to the earth instead of along the power line. The SiC columns proved to conduct significantly at normal power-line operating voltages and thus had to be placed
2450:
technique. Carborundum grit is applied in a paste to the surface of an aluminium plate. When the paste is dry, ink is applied and trapped in its granular surface, then wiped from the bare areas of the plate. The ink plate is then printed onto paper in a rolling-bed press used for
2034:
rated at 1,200 V were introduced to the market, followed in 2011 by the first commercial MOSFETs rated at 1200 V. JFETs are now available rated 650 V to 1,700 V with resistance as low as 25 mΩ. Beside SiC switches and SiC Schottky diodes (also
Schottky barrier diode,
681:
1947:
afterwards, in the latter case due to material failure or contamination by dust or salt. Usage of SiC columns was originally intended to eliminate the need for the spark gap in lightning arresters. Gapped SiC arresters were used for lightning-protection and sold under the
5269:
Emtsev, Konstantin V.; Bostwick, Aaron; Horn, Karsten; Jobst, Johannes; Kellogg, Gary L.; Ley, Lothar; McChesney, Jessica L.; Ohta, Taisuke; Reshanov, Sergey A. (2009-02-08). "Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide".
1717:
was discovered. Development of this laboratory-produced composite to a commercial product took only three years. In 1985, the first commercial cutting tools made from this alumina and silicon carbide whisker-reinforced composite were introduced into the market.
2202:
diameter of 15 micrometers, about one fifth that of a human hair. Because the fibers are so thin, they do little to disturb the flame and their temperature remains close to that of the local gas. Temperatures of about 800–2,500 K can be measured.
1573:
and furnace parts. Silicon carbide does not melt but begins to sublimate near 2,700 °C like graphite, having an appreciable vapor pressure near that temp. It is also highly inert chemically, partly due to the formation of a thin passivated layer of
2458:
Carborundum grit is also used in stone
Lithography. Its uniform particle size allows it to be used to "Grain" a stone which removes the previous image. In a similar process to sanding, coarser grit Carborundum is applied to the stone and worked with a
1172:
1195:
gas ambient at 2,500 °C and redeposited into flake-like single crystals, sized up to 2 × 2 cm, at a slightly colder substrate. This process yields high-quality single crystals, mostly of 6H-SiC phase (because of high growth temperature).
1806:
Silicon carbide is used as a support and shelving material in high temperature kilns such as for firing ceramics, glass fusing, or glass casting. SiC kiln shelves are considerably lighter and more durable than traditional alumina shelves.
2019:
researchers have been tentatively finding solutions to improve the breakdown performance. Apart from crystal quality, problems with the interface of SiC with silicon dioxide have hampered the development of SiC-based power MOSFETs and
5392:
Juang, Zhen-Yu; Wu, Chih-Yu; Lo, Chien-Wei; Chen, Wei-Yu; Huang, Chih-Fang; Hwang, Jenn-Chang; Chen, Fu-Rong; Leou, Keh-Chyang; Tsai, Chuen-Horng (2009-07-01). "Synthesis of graphene on silicon carbide substrates at low temperature".
2414:
The natural resistance to oxidation exhibited by silicon carbide, as well as the discovery of new ways to synthesize the cubic β-SiC form, with its larger surface area, has led to significant interest in its use as a heterogeneous
5593:
Davidsson, J.; Ivády, V.; Armiento, R.; Son, N.T.; Gali, A.; Abrikosov, I. A. (2018). "First principles predictions of magneto-optical data for semiconductor point defect identification: the case of divacancy defects in 4H–SiC".
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vacuum with graphite. Then the vacuum is released very gradually to control the growth of graphene. This method yields the highest quality graphene layers. But other methods have been reported to yield the same product as well.
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or AGG. The growth of abnormally long silicon carbide grains may serve to impart a toughening effect through crack-wake bridging, similar to whisker reinforcement. Similar AGG-toughening effects have been reported in
4662:
Petrovsky, Gury
Timofeevic; Tolstoy, Michael N.; Lubarsky, Sergey V.; Khimitch, Yuri P.; Robb, Paul N. (June 1994). Stepp, Larry M. (ed.). "2.7-meter-diameter silicon carbide primary mirror for the SOFIA telescope".
4299:
Chen, H.; Raghothamachar, Balaji; Vetter, William; Dudley, Michael; Wang, Y.; Skromme, B.J. (2006). "Effects of
Different Defect Types on the Performance of Devices Fabricated on a 4H-SiC Homoepitaxial Layer".
2234:
The outer thermal protection layer of NASA's LOFTID inflatable heat shield incorporates a woven ceramic made from silicon carbide, with fiber of such small diameter that it can be bundled and spun into a yarn.
1071:. Moissan also synthesized SiC by several routes, including dissolution of carbon in molten silicon, melting a mixture of calcium carbide and silica, and by reducing silica with carbon in an electric furnace.
1640:
has been detected in 3C-SiC:Al, 3C-SiC:B and 6H-SiC:B at similar temperatures ~1.5 K. A crucial difference is however observed for the magnetic field behavior between aluminium and boron doping: 3C-SiC:Al is
2062:
2210:
References to silicon carbide heating elements exist from the early 20th century when they were produced by
Acheson's Carborundum Co. in the U.S. and EKL in Berlin. Silicon carbide offered increased
2148:
which favors light emission. However, SiC is still one of the important LED components: It is a popular substrate for growing GaN devices, and it also serves as a heat spreader in high-power LEDs.
1245:
at relatively low temperatures. Relative to the CVD process, the pyrolysis method is advantageous because the polymer can be formed into various shapes prior to thermalization into the ceramic.
5491:
Lohrmann, A.; Iwamoto, N.; Bodrog, Z.; Castalletto, S.; Ohshima, T.; Karle, T.J.; Gali, A.; Prawer, S.; McCallum, J.C.; Johnson, B.C. (2015). "Single-photon emitting diode in silicon carbide".
1088:
The first use of SiC was as an abrasive. This was followed by electronic applications. In the beginning of the 20th century, silicon carbide was used as a detector in the first radios. In 1907
7526:
1347:), is formed at temperatures below 1,700 °C. Until recently, the beta form has had relatively few commercial uses, although there is now increasing interest in its use as a support for
4530:
617:
982:, and examples of this stardust have been found in pristine condition in primitive (unaltered) meteorites. The silicon carbide found in space and in meteorites is almost exclusively the
9028:
5647:
2076:
may have a higher power density than silicon power devices and are able to handle higher temperatures exceeding the silicon limit of 150 °C. New die attach technologies such as
2069:
Gate drive: SiC devices often require gate drive voltage levels that are different from their silicon counterparts and may be even unsymmetric, for example, +20 V and −5 V.
682:
4994:
967:, after whom the material was named in 1905. Moissan's discovery of naturally occurring SiC was initially disputed because his sample may have been contaminated by silicon carbide
2610:
2354:
of the crystal to minimize birefringent effects. It is lighter (density 3.21 g/cm vs. 3.53 g/cm), and much more resistant to heat than diamond. This results in a stone of higher
718:
5331:
de Heer, Walt A.; Berger, Claire; Wu, Xiaosong; First, Phillip N.; Conrad, Edward H.; Li, Xuebin; Li, Tianbo; Sprinkle, Michael; Hass, Joanna (July 2007). "Epitaxial graphene".
791:
2463:, typically a round plate eccentric on a perpendicular shaft, then gradually finer and finer grit is applied until the stone is clean. This creates a grease sensitive surface.
2917:
3468:
Morkoç, H.; Strite, S.; Gao, G. B.; Lin, M. E.; Sverdlov, B.; Burns, M. (1994). "Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies".
3924:
1248:
SiC can also be made into wafers by cutting a single crystal either using a diamond wire saw or by using a laser. SiC is a useful semiconductor used in power electronics.
2551:
and carbon dioxide. This can be used to make the glaze foam and crater due to the evolved carbon dioxide gas, or to reduce the colorant oxides and achieve colors such as
2518:
in diamond. In 4H-SiC, the divacancy has four different configurations which correspond to four zero-phonon lines (ZPL). These ZPL values are written using the notation V
4103:
O'Sullivan, D.; Pomeroy, M.J.; Hampshire, S.; Murtagh, M.J. (2004). "Degradation resistance of silicon carbide diesel particulate filters to diesel fuel ash deposits".
8775:
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3251:
7519:
4818:
4444:"Cree launches industry's first commercial silicon carbide power MOSFET; destined to replace silicon devices in high-voltage (≥ 1200 V) power electronics"
2366:
and a very slight green or yellow fluorescence under ultraviolet light. Some moissanite stones also have curved, string-like inclusions, which diamonds never have.
1081:
by which SiC is still made today and formed the
Carborundum Company to manufacture bulk SiC, initially for use as an abrasive. In 1900 the company settled with the
1155:, which is a byproduct of producing silicon metal and ferrosilicon alloys, can also be converted to SiC by heating with graphite at 1,500 °C (2,730 °F).
1092:
produced the first LED by applying a voltage to a SiC crystal and observing yellow, green and orange emission at the cathode. The effect was later rediscovered by
916:
in early radios were first demonstrated around 1907. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both.
2362:
is closer to diamond than any other substitute. Many thermal diamond-testing devices cannot distinguish moissanite from diamond, but the gem is distinct in its
2065:(CIPS) report regularly about the technological progress of SiC power devices. Major challenges for fully unleashing the capabilities of SiC power devices are:
3953:
381:
2255:
containment material. It is also used in producing radiation detectors for monitoring radiation levels in nuclear facilities, environmental monitoring, and
1759:
blades or nozzle vanes. However, none of these projects resulted in a production quantity, mainly because of its low impact resistance and its low fracture
9021:
5796:
1207:
yields even larger single crystals of 4 inches (10 cm) in diameter, having a section 81 times larger compared to the conventional Lely process.
7512:
5152:
Singh, S. K.; Parida, K. M.; Mohanty, B. C.; Rao, S. B. (1995). "High surface area silicon carbide from rice husk: A support material for catalysts".
613:
2179:
spacecraft subsystems are mounted on a rigid silicon carbide frame, which provides a stable structure that will not expand or contract due to heat.
2168:) has been scaled up to produce disks of polycrystalline silicon carbide up to 3.5 m (11 ft) in diameter, and several telescopes like the
1952:
3123:
Lely, Jan
Anthony (1955). "Darstellung von Einkristallen von Silicium Carbid und Beherrschung von Art und Menge der eingebauten Verunreinigungen".
2790:
Di Pierro S.; Gnos E.; Grobety B.H.; Armbruster T.; Bernasconi S.M. & Ulmer P. (2003). "Rock-forming moissanite (natural α-silicon carbide)".
2287:. A layer of silicon carbide gives coated fuel particles structural support and is the main diffusion barrier to the release of fission products.
1214:(CVD) of silane, hydrogen and nitrogen. Homoepitaxial and heteroepitaxial SiC layers can be grown employing both gas and liquid phase approaches.
4523:
4422:"At 1200 V and 45 milliohms, SemiSouth introduces the industry's lowest resistance SiC power transistor for efficient power management"
706:
9014:
1814:
was mentioned as a way to produce a new strong and plastic alloy suitable for use in aeronautics, aerospace, automobile and micro-electronics.
1082:
4421:
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9327:
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Pitcher, M. W.; Joray, S. J.; Bianconi, P. A. (2004). "Smooth
Continuous Films of Stoichiometric Silicon Carbide from Poly(methylsilyne)".
2394:. The additional energy liberated allows the furnace to process more scrap with the same charge of hot metal. It can also be used to raise
1225:
at temperatures in the range 1,000–1,100 °C. Precursor materials to obtain silicon carbide in such a manner include polycarbosilanes,
994:
meteorite, has revealed anomalous isotopic ratios of carbon and silicon, indicating that these grains originated outside the solar system.
4706:
3064:
Zhong, Y.; Shaw, Leon L.; Manjarres, Misael & Zawrah, Mahmoud F. (2010). "Synthesis of
Silicon Carbide Nanopowder Using Silica Fume".
1309:
5002:
3978:
Hanaor, Dorian A.H.; Xu, Wanqiang; Ferry, Michael; Sorrell, Charles C. (2012). "Abnormal grain growth of rutile TiO2 induced by ZrSiO4".
6031:
2280:
1124:
Because natural moissanite is extremely scarce, most silicon carbide is synthetic. Silicon carbide is used as an abrasive, as well as a
4378:
Chen, Z.; Ahyi, A.C.; Zhu, X.; Li, M.; Isaacs-Smith, T.; Williams, J.R.; Feldman, L.C. (2010). "MOS Characteristics of C-Face 4H-SiC".
4074:
8898:
4935:
López-Honorato, E.; Tan, J.; Meadows, P. J.; Marsh, G.; Xiao, P. (2009). "TRISO coated fuel particles with enhanced SiC properties".
4546:
full SiC power module, in its Model 3. ... STMicroelectronics ... Tesla inverter ... 24 1-in-1 power modules ... module contains two
1151:
particles in plant material (e.g. rice husks) can be converted to SiC by heating in the excess carbon from the organic material. The
1085:
when a judge's decision gave "priority broadly" to its founders "for reducing ores and other substances by the incandescent method".
8798:
2927:
2698:
2642:
2020:
342:
5100:
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3004:
1059:
in 1891. Acheson was attempting to prepare artificial diamonds when he heated a mixture of clay (aluminium silicate) and powdered
4472:
Resonant Behaviour of Pulse Generators for the Efficient Drive of Optical Radiation Sources Based on Dielectric Barrier Discharges
9322:
9225:
1591:
1325:
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Ruan, Ming; Hu, Yike; Guo, Zelei; Dong, Rui; Palmer, James; Hankinson, John; Berger, Claire; Heer, Walt A. de (December 2012).
3341:
Bunsell, A. R.; Piant, A. (2006). "A review of the development of three generations of small diameter silicon carbide fibres".
2578:
5024:
3155:
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Castelletto, Stefania; Johnson, Brett; Iv{\'a}dy, Viktor; Stavrias, Nicholas; Umeda, T; Gali, Adam; Ohshima, Takeshi (2014).
4164:
Studt, P. (1987). "Influence of lubricating oil additives on friction of ceramics under conditions of boundary lubrication".
2842:
2335:
1340:
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4910:"Silicon Carbide Sensors and Electronics Technology for Extreme Environments: Opportunities for Nuclear Power Applications"
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4447:
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1976:
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at which point their resistance must drop to a lower level and maintain this level until the applied voltage drops below V
1257:
1011:
601:
8883:
4822:
2330:, silicon carbide is called "synthetic moissanite" or just "moissanite" after the mineral name. Moissanite is similar to
2156:
The low thermal expansion coefficient, high hardness, rigidity and thermal conductivity make silicon carbide a desirable
798:
577:
9342:
1935:
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2214:
compared with metallic heaters. Silicon carbide elements are used today in the melting of glass and non-ferrous metal,
1786:, used disks of silicon carbide. Improved fracture toughness in SiC armor can be facilitated through the phenomenon of
530:
46:
9347:
9037:
8079:
1926:
1737:
In the 1980s and 1990s, silicon carbide was studied in several research programs for high-temperature gas turbines in
1679:
306:
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Bertolino, Meyer, G. (2002). "Degradation of the mechanical properties of Zircaloy-4 due to hydrogen embrittlement".
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which improves casting distance while providing adequate hardness that prevents abrasion from braided fishing line.
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742:
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because of its chemical properties that promote the production of graphene on the surface of SiC nanostructures.
2259:. Again, SiC sensors and electronics for nuclear reactor applications are being developed potentially for future
2165:
1875:
1211:
913:
692:
200:
3208:
Bakin, Andrey S. (2006). "SiC Homoepitaxy and Heteroepitaxy". In M. Shur; S. Rumyantsev; M. Levinshtein (eds.).
2514:
One well known point defect in silicon carbide is the divacancy which has a similar electronic structure as the
8878:
8304:
8074:
8034:
3621:
Neumeier, J.J.; Shvyd'ko, Y.V.; Haskel, Daniel (2024). "Thermal expansion of 4H and 6H SiC from 5 K to 340 K".
2395:
2169:
2073:
1831:
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1234:
230:
5554:"Enhancing the brightness of electrically driven single-photon sources using color centers in silicon carbide"
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1995:
providing advantages for fast, high-temperature and/or high-voltage devices. The first devices available were
1662:
641:
236:
8235:
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in the temperature range 5 K to 340 K that would cause discontinuities in the thermal expansion coefficient.
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1348:
1183:, in which SiC powder is sublimed into high-temperature species of silicon, carbon, silicon dicarbide (SiC
1024:
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temperatures and adjust the carbon and silicon content. Silicon carbide is cheaper than a combination of
130:
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Zheng, Qiye; Li, Chunhua; Rai, Akash; Leach, Jacob H.; Broido, David A.; Cahill, David G. (2019-01-03).
2568:
2211:
1903:
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at a high temperature, between 1,600 °C (2,910 °F) and 2,500 °C (4,530 °F). Fine SiO
553:
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were based on SiC. Yellow LEDs made from 3C-SiC were manufactured in the Soviet Union in the 1970s and
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2140:, showed 10–100 times brighter emission. This difference in efficiency is due to the unfavorable
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5755:"The Radio We Could Send to Hell: Silicon carbide radio circuits can take the volcanic heat of Venus"
5613:
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5510:
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due to the durability and low cost of the material. In manufacturing, it is used for its hardness in
1570:
1506:
909:
66:
7833:
3693:
Bhatnagar, M.; Baliga, B.J. (March 1993). "Comparison of 6H-SiC, 3C-SiC, and Si for power devices".
2097:
increase in production of silicon carbide is projected, beginning with a large plant opened 2022 by
893:
that are widely used in applications requiring high endurance, such as car brakes, car clutches and
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Kriener, M.; Muranaka, Takahiro; Kato, Junya; Ren, Zhi-An; Akimitsu, Jun; Maeno, Yoshiteru (2008).
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are required to efficiently get the heat out of the devices and ensure a reliable interconnection.
1077:
for making silicon carbide powder on February 28, 1893. Acheson also developed the electric batch
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8808:
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8661:
8406:
8160:
8094:
7959:
7919:
7803:
7770:
7733:
7693:
7672:
7615:
7590:
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7458:
7450:
6614:
6521:
6234:
6195:
6167:
6017:
5956:
5852:
5629:
5603:
5534:
5500:
5473:
5374:
5340:
5251:
5169:
4732:
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4403:
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4128:
4013:
3987:
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3598:
3366:
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3046:
2815:
2291:
2284:
2008:
1899:
1839:
1675:
1226:
1089:
1078:
949:
585:
7954:
2342:
between 2.65 and 2.69 (compared to 2.42 for diamond). Moissanite is somewhat harder than common
2310:
1158:
The material formed in the Acheson furnace varies in purity, according to its distance from the
924:
629:
581:
7865:
4710:
3384:
Laine, Richard M.; Babonneau, Florence (1993). "Preceramic polymer routes to silicon carbide".
2460:
597:
9297:
9155:
9135:
8918:
8501:
8401:
8371:
8289:
8029:
7914:
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6393:
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5936:
5805:
5674:
5526:
5465:
5418:
5366:
5313:
5305:
5243:
5132:
5080:
4798:
4773:
4620:
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4352:
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4198:
3888:
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3874:
3834:
3777:
3545:
3432:
3278:
3213:
3188:
3157:
Nippon Steel Technical Report no. 84 : Large high-quality silicon carbide substrates
3103:
2949:
2870:
2694:
2638:
2176:
2173:
1687:
1637:
1332:
1317:
Silicon carbide exists in about 250 crystalline forms. Through inert atmospheric pyrolysis of
1200:
605:
463:
8049:
5074:
4564:"What's Down the Road for Silicon?: Meet the new materials overpowering the electric economy"
4470:
4219:
4192:
3867:
Tiegs, Terry (2005). "Chapter 13: Whisker Reinforced Alumina". In Bansal, Narottam P. (ed.).
3562:
1634:. Metallic conductivity has been achieved by heavy doping with boron, aluminium or nitrogen.
9127:
9105:
9089:
9081:
8995:
8983:
8903:
8803:
8733:
8708:
8656:
8089:
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7850:
7838:
7798:
7703:
7636:
7298:
6537:
6116:
6063:
5819:
5754:
5621:
5573:
5518:
5457:
5410:
5358:
5295:
5287:
5235:
5161:
4975:
4952:
4889:
4763:
4755:
4680:
4395:
4344:
4309:
4173:
4120:
4082:
4005:
3824:
3816:
3767:
3759:
3710:
3638:
3588:
3535:
3527:
3485:
3393:
3358:
3315:
3073:
3038:
2961:
2807:
2659:
2428:
2416:
2339:
2248:
1930:
1895:
1886:
SiC is used in crucibles for holding melting metal in small and large foundry applications.
1771:
1731:
1595:
1242:
1129:
898:
824:
487:
404:
3506:
Muranaka, T.; Kikuchi, Yoshitake; Yoshizawa, Taku; Shirakawa, Naoki; Akimitsu, Jun (2008).
1007:
Non-systematic, less-recognized and often unverified syntheses of silicon carbide include:
974:
While rare on Earth, silicon carbide is remarkably common in space. It is a common form of
633:
294:
9143:
9097:
9073:
9060:
8591:
8566:
8265:
8104:
8044:
8024:
7944:
7828:
7728:
7713:
7605:
7595:
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6410:
6386:
6162:
6141:
6132:
6121:
5944:
5928:
5300:
5060:
4547:
3255:
2548:
2256:
2137:
1992:
1792:
1710:
1695:
1569:
The high sublimation temperature of SiC (approximately 2,700 °C) makes it useful for
1563:
1165:
1144:
1074:
609:
219:
170:
2766:
1590:
density make it more promising than silicon for high-powered devices. SiC has a very low
106:
5617:
5569:
5514:
5453:
5406:
5354:
5283:
5231:
5187:
5104:
4948:
4885:
4751:
4676:
4391:
4340:
4116:
4035:
4001:
3812:
3755:
3706:
3634:
3523:
3481:
3354:
3311:
3008:
2803:
1955:
brand names, among others. The gapped SiC arrester has been largely displaced by no-gap
327:
192:
150:
9256:
9251:
9115:
9065:
8828:
8793:
8576:
8466:
8431:
8416:
8351:
8346:
8245:
8145:
8064:
8039:
8004:
7949:
7924:
7793:
7641:
4870:"SiC detectors: A review on the use of silicon carbide as radiation detection material"
3829:
3820:
3796:
3772:
3763:
3729:
3540:
3531:
3507:
2771:
2487:
2343:
2215:
2089:
2036:
1996:
1843:
1783:
1775:
1583:
1550:
Pure SiC is colorless. The brown to black color of the industrial product results from
1428:
948:. Virtually all the silicon carbide sold in the world, including moissanite jewels, is
769:
573:
4979:
3593:
3576:
2507:. These defects can produce single photons on demand and thus serve as a platform for
2374:
1822:
1694:. SiC provides a much sharper and harder alternative for sand blasting as compared to
9286:
9261:
8858:
8713:
8596:
8571:
8552:
8496:
8376:
8334:
8329:
8069:
8059:
8019:
7894:
7788:
7743:
7718:
7600:
7580:
5725:
5538:
4692:
4177:
4132:
3650:
3602:
3370:
3077:
3050:
2819:
2544:
2403:
2363:
2252:
2085:
1988:
1972:
1767:
1746:
1607:
1344:
1125:
964:
894:
874:
443:
181:
7504:
5477:
5378:
5255:
5173:
4640:
4407:
4327:
Madar, Roland (26 August 2004). "Materials science: Silicon carbide in contention".
4017:
3327:
657:
8934:
8788:
8641:
8581:
8561:
8533:
8461:
8341:
8324:
8279:
8230:
8135:
7855:
7808:
7656:
6366:
6207:
5695:
5633:
5032:
4364:
4009:
3164:
2399:
2347:
2276:
2223:
2191:
Test flame and glowing SiC fibers. The flame is about 7 cm (2.8 in) tall.
2058:
2044:
1878:. It is also used as an oil additive to reduce friction, emissions, and harmonics.
1691:
1489:
1180:
1097:
589:
4995:"Assessment of Silicon Carbide Cladding for High Performance Light Water Reactors"
4956:
3141:
2834:
2503:
Silicon carbide can host point defects in the crystal lattice, which are known as
1132:
of gem quality. The simplest process to manufacture silicon carbide is to combine
9209:
5668:
5414:
5126:
4792:
4614:
4273:
4246:
3868:
3577:"Thermal conductivity of GaN, $ ^{71}\mathrm{GaN}$ , and SiC from 150 K to 850 K"
3426:
3272:
3182:
3097:
2864:
2419:. This form has already been employed as a catalyst support for the oxidation of
258:
9266:
9199:
8908:
8818:
8783:
8750:
8676:
8651:
8491:
8396:
8366:
8250:
8165:
8155:
7885:
7813:
2447:
2420:
2219:
2043:
packages, companies started even earlier to implement the bare chips into their
1863:
1388:
1152:
1060:
1048:
979:
975:
902:
53:
5625:
4794:
Industrial heating: principles, techniques, materials, applications, and design
3642:
3029:
Vlasov, A.S.; et al. (1991). "Obtaining silicon carbide from rice husks".
1971:
Silicon carbide was the first commercially important semiconductor material. A
1229:
and polysilazanes. Silicon carbide materials obtained through the pyrolysis of
1171:
1116:
1043:
645:
559:
17:
8823:
8765:
8728:
8703:
8601:
8411:
8274:
5920:
5767:
5741:
5578:
5553:
5362:
4909:
4399:
4146:
3853:
3411:
3362:
2606:
2444:
2351:
2315:
2012:
1960:
1851:
1835:
1753:
1703:
1615:
1093:
945:
933:
881:, but has been mass-produced as a powder and crystal since 1893 for use as an
878:
453:
415:
161:
82:
5422:
5370:
5309:
5247:
4894:
4869:
4313:
2986:
2903:
2547:
applied to ceramics. At high temperatures it can reduce metal oxides forming
1017:
Robert Sydney Marsden's dissolution of silica in molten silver in a graphite
9271:
9246:
9230:
9204:
8755:
8620:
8456:
8260:
8140:
7994:
7969:
6397:
5213:"Epitaxial graphene on silicon carbide: Introduction to structured graphene"
3892:
2811:
2719:
2690:
2634:
2402:
and carbon, produces cleaner steel and lower emissions due to low levels of
2327:
2161:
2098:
2077:
2024:
1956:
1939:
1871:
1811:
1760:
1699:
1627:
1619:
1287:
1278:
1269:
1222:
968:
937:
886:
5530:
5469:
5437:
5317:
4777:
4356:
3838:
3781:
3549:
3319:
2222:
production, production of ceramics and electronics components, igniters in
1027:'s heating of a mixture of silicon and silica in a graphite crucible (1881)
1014:'s passing an electric current through a carbon rod embedded in sand (1849)
4191:
Friedrichs, Peter; Kimoto, Tsunenobu; Ley, Lothar; Pensl, Gerhard (2011).
4124:
2187:
1108:
8723:
8635:
8436:
8299:
8284:
8255:
8124:
7899:
7723:
7667:
7661:
7630:
7575:
7543:
6179:
6041:
5840:
5239:
4759:
2472:
2323:
2295:
2130:
1975:"carborundum" (synthetic silicon carbide) detector diode was patented by
1671:
1611:
1336:
1204:
1162:
1159:
1068:
1031:
1018:
941:
882:
705:
698:
691:
664:
31:
4707:"Thin-Filament Pyrometry Developed for Measuring Temperatures in Flames"
4589:
4057:"UCLA researchers create exceptionally strong and lightweight new metal"
3397:
2965:
2334:
in several important respects: it is transparent and hard (9–9.5 on the
1067:, believing it to be a new compound of carbon and aluminium, similar to
9194:
9189:
9183:
8888:
8718:
8671:
8630:
8586:
8528:
8523:
8486:
8476:
8471:
8426:
8421:
8361:
8294:
8185:
8180:
8130:
8009:
7999:
7752:
5968:
5522:
5165:
4993:
Carpenter, David; Ahn, K.; Kao, S.P.; Hejzlar, Pavel; Kazimi, Mujid S.
3042:
2331:
2263:
nuclear power and the emerging terrestrial micro nuclear power plants.
2260:
2244:
1907:
1859:
1855:
1810:
In December 2015, infusion of silicon carbide nano-particles in molten
1756:
1631:
1472:
960:
955:
Natural moissanite was first found in 1893 as a small component of the
890:
866:
433:
245:
201:
5733:
4684:
3714:
3664:
2406:, has a low gas content, and does not lower the temperature of steel.
2125:
was discovered in 1907 using silicon carbide and the first commercial
1594:
of about 2.3 × 10 K near 300 K (for 4H and 6H SiC) and experiences no
9040:
8939:
8760:
8742:
8205:
8175:
7677:
6056:
5904:
5461:
5291:
4768:
3489:
3428:
Silicon carbide microelectromechanical systems for harsh environments
2573:
2424:
2157:
2093:
2040:
2027:
has dramatically reduced the defects causing the interface problems.
2004:
1750:
1738:
1328:, and is formed at temperatures greater than 1,700 °C and has a
1140:
1133:
870:
5774:
5753:
Mantooth, Alan; Zetterling, Carl-Mikael; Rusu, Ana (28 April 2021).
4348:
1925:, and so columns of SiC pellets were connected between high-voltage
1826:
The Porsche Carrera GT's silicon carbide "carbon-ceramic" disk brake
768:
Except where otherwise noted, data are given for materials in their
5608:
5505:
3797:"Superconductivity in compensated and uncompensated semiconductors"
1063:(carbon) in an iron bowl. He called the blue crystals that formed
7974:
7904:
5345:
4194:
Silicon Carbide: Volume 1: Growth, Defects, and Novel Applications
3992:
3746:
2455:. The result is a print of painted marks embossed into the paper.
2387:
2373:
2309:
2272:
2186:
2104:
2103:
1821:
1742:
1725:
1661:
1623:
1554:
impurities. The rainbow-like luster of the crystals is due to the
1308:
1192:
1170:
1115:
1107:
1042:
923:
269:
141:
129:
119:
2526:
and the unit eV: hh(1.095), kk(1.096), kh(1.119), and hk(1.150).
1221:
can be used as precursors which form the ceramic product through
699:
2391:
2063:
International Conference on Integrated Power Electronics Systems
2055:
2031:
2000:
1867:
1698:. Particles of silicon carbide are laminated to paper to create
1551:
1136:
755:
653:
9010:
7508:
6013:
5778:
2866:
Carbide, nitride, and boride materials synthesis and processing
2136:
Carbide LED production soon stopped when a different material,
1351:, owing to its higher surface area compared to the alpha form.
1324:
Alpha silicon carbide (α-SiC) is the most commonly encountered
901:. Large single crystals of silicon carbide can be grown by the
1943:
458:
Insoluble in water, soluble in molten alkalis and molten iron
3906:
1670:
In the arts, silicon carbide is a popular abrasive in modern
1313:
Silicon carbide, image taken under a stereoscopic microscope.
905:
and they can be cut into gems known as synthetic moissanite.
857:
2907:"Production of artificial crystalline carbonaceous material"
1286:
1277:
1268:
1210:
Cubic SiC is usually grown by the more expensive process of
833:
311:
5552:
Khramtsov, I.A.; Vyshnevyy, A.A.; Fedyanin, D. Yu. (2018).
4819:"NASA Inflatable Heat Shield Finds Strength in Flexibility"
3452:
Additive Manufacturing of Ceramics from Preceramic Polymers
1948:
1902:
in electric power systems. These devices must exhibit high
839:
4731:
Maun, Jignesh D.; Sunderland, P. B.; Urban, D. L. (2007).
3730:"Superconductivity in heavily boron-doped silicon carbide"
1582:
in electronics, where its high thermal conductivity, high
5438:"A silicon carbide room-temperature single-photon source"
5128:
Handbook of commercial catalysts: heterogeneous catalysts
1979:
in 1906. It found much early use in shipboard receivers.
848:
676:
448:
2,830 °C (5,130 °F; 3,100 K) (decomposes)
4999:
Nuclear Fuel Cycle Program, Volume MIT-NFC-TR-098 (2007)
4496:
Horio, Masafumi; Iizuka, Yuji; Ikeda, Yoshinari (2012).
3954:"Dragon Skin – Most Protective Body Armor – Lightweight"
2092:
in the drive unit use 24 pairs of silicon carbide (SiC)
2767:"Nouvelles recherches sur la météorité de Cañon Diablo"
2350:. For this reason, moissanite jewels are cut along the
936:
is found in only minute quantities in certain types of
786:
5029:
Nuclear Fabrication Consortium, nuclearfabrication.org
4524:
STMicroelectronics SiC Module in Tesla Model3 Inverter
4446:(Press release). Cree. 17 January 2011. Archived from
3003:
Hart, Jeffrey A.; Stefanie Ann Lenway; Thomas Murtha.
2247:
absorption capability, it is used as fuel cladding in
2050:
SiC SBD diodes found wide market spread being used in
885:. Grains of silicon carbide can be bonded together by
30:"Carborundum" redirects here. Not to be confused with
4733:"Thin-filament pyrometry with a digital still camera"
2611:
National Institute for Occupational Safety and Health
1120:
Two six-inch (≈ 15 cm) wafers made of silicon carbide
1030:
Albert Colson's heating of silicon under a stream of
851:
830:
827:
428:
Yellow to green to bluish-black, iridescent crystals
4275:
Transmission and distribution electrical engineering
3508:"Superconductivity in carrier-doped silicon carbide"
2543:
Silicon carbide is used as a raw ingredient in some
1894:
The earliest electrical application of SiC was as a
877:, it occurs in nature as the extremely rare mineral
854:
845:
836:
9239:
9218:
9176:
9048:
8774:
8694:
8619:
8510:
8445:
8385:
8313:
8219:
8113:
7983:
7769:
7551:
7542:
5868:
5833:
5812:
2294:has been investigated for use as a replacement for
1578:. There is currently much interest in its use as a
908:Electronic applications of silicon carbide such as
842:
4641:"The Largest Telescope Mirror Ever Put into Space"
2172:are already equipped with SiC optics, as well the
5768:"Silicon Carbide: A Power Electronics Revolution"
3851:Fuster, Marco A. (1997). "Skateboard grip tape",
3212:. Vol. 1. World Scientific. pp. 43–76.
2471:Silicon carbide can be used in the production of
3144:. Nitride-crystals.com. Retrieved on 2013-05-04.
2918:"The Manufacture of Carborundum- a New Industry"
749:TWA 10 mg/m (total) TWA 5 mg/m (resp)
736:TWA 15 mg/m (total) TWA 5 mg/m (resp)
257:
5670:Complete Book of Rod Building and Tackle Making
3125:Berichte der Deutschen Keramischen Gesellschaft
1921:It was recognized early on that SiC had such a
1778:), and in ceramic plates in bulletproof vests.
680:
105:
4498:"Packaging Technologies for SiC Power Modules"
3873:. Boston: Kluwer Academic Publishers. p.
1987:In 1993, the silicon carbide was considered a
971:that were already on the market at that time.
9022:
7520:
6025:
5790:
2835:"The Astrophysical Nature of Silicon Carbide"
2378:Piece of silicon carbide used in steel making
2346:. Unlike diamond, moissanite can be strongly
1766:Like other hard ceramics (namely alumina and
1730:Silicon carbide is used for trauma plates of
1709:In 1982 an exceptionally strong composite of
8:
4667:. Advanced Technology Optical Telescopes V.
3801:Science and Technology of Advanced Materials
3734:Science and Technology of Advanced Materials
2271:Silicon carbide is an important material in
1145:Acheson graphite electric resistance furnace
4428:(Press release). 5 May 2011. Archived from
3501:
3499:
2023:. Although the mechanism is still unclear,
9029:
9015:
9007:
7548:
7527:
7513:
7505:
6032:
6018:
6010:
5797:
5783:
5775:
3623:Journal of Physics and Chemistry of Solids
3565:. Ioffe Institute Semiconductors Database.
3005:"A History of Electroluminescent Displays"
2555:otherwise only possible in a fuel powered
1749:. The components were intended to replace
928:Moissanite single crystal (≈ 1 mm in size)
865:), is a hard chemical compound containing
326:
191:
169:
38:
5607:
5577:
5504:
5344:
5299:
4893:
4767:
4643:. European Space Agency. 23 February 2004
4475:. KIT Scientific Publishing. p. 94.
3991:
3828:
3771:
3745:
3688:
3686:
3592:
3539:
3091:
3089:
3087:
1910:across them reaches a certain threshold V
1339:). The beta modification (β-SiC), with a
293:
6404:
6400:
4619:. Academic Press. pp. 48, 57, 425.
4221:Foseco Non-Ferrous Foundryman's Handbook
3616:
3614:
3612:
2954:Journal of the American Chemical Society
2605:NIOSH Pocket Guide to Chemical Hazards.
1870:cars. Silicon carbide is also used in a
1511:@300 K (see for temp. dependence)
1353:
1261:
1179:Pure silicon carbide can be made by the
1112:Synthetic SiC crystals ~3 mm in diameter
6040:Salts and covalent derivatives of the
5154:Reaction Kinetics and Catalysis Letters
4224:. Butterworth-Heinemann. pp. 52–.
4197:. John Wiley & Sons. pp. 49–.
3266:
3264:
3233:AM of Ceramics from Preceramic Polymers
3066:Journal of the American Ceramic Society
2714:
2712:
2710:
2590:
1834:is used for high performance "ceramic"
386:
347:
322:
235:
6069:
5746:NIOSH Pocket Guide to Chemical Hazards
4608:
4606:
4536:from the original on December 27, 2020
2600:
2598:
2596:
2594:
2338:, compared to 10 for diamond), with a
1083:Electric Smelting and Aluminum Company
986:. Analysis of SiC grains found in the
182:
7063:
5192:Bircham Gallery, birchamgallery.co.uk
4616:High brightness light emitting diodes
3695:IEEE Transactions on Electron Devices
3431:. Imperial College Press. p. 3.
2720:"Properties of Silicon Carbide (SiC)"
2686:CRC Handbook of Chemistry and Physics
2630:CRC Handbook of Chemistry and Physics
2622:
2620:
1055:Wide-scale production is credited to
354:Key: HBMJWWWQQXIZIP-UHFFFAOYSA-N
149:
7:
6052:
5726:"A Brief History of Silicon Carbide"
5667:C. Boyd Pfeiffer (15 January 2013).
4034:. Ceramic Arts Daily. Archived from
3795:Yanase, Y. & Yorozu, N. (2008).
3031:Refractories and Industrial Ceramics
2281:high temperature gas cooled reactors
2275:-coated fuel particles, the type of
1586:breakdown strength and high maximum
1525:Thermal Expansion Coefficient (10 K)
3563:Silicon Carbide. Thermal properties
2267:Nuclear fuel particles and cladding
2164:telescopes. The growth technology (
1866:and some specific high-performance
1527:@300 K (see for temp. dependence)
468:~900 cm/(V⋅s) (all polytypes)
361:Key: HBMJWWWQQXIZIP-UHFFFAOYAF
248:
8899:Nexus for Exoplanet System Science
5101:"Silicon carbide (steel industry)"
5054:Casting Metal Directly onto Stones
4522:Barbarini, Elena (June 25, 2018).
3956:. Future Firepower. Archived from
3277:. Academic Press. pp. 20–60.
2021:insulated-gate bipolar transistors
1918:flushing current into the ground.
1355:Properties of major SiC polytypes
1263:Structure of major SiC polytypes.
1199:A modified Lely process involving
25:
8799:Atomic and molecular astrophysics
7536:Molecules detected in outer space
4529:(Report). SystemPlus Consulting.
3594:10.1103/PhysRevMaterials.3.014601
2689:(92nd ed.). Boca Raton, FL:
2633:(92nd ed.). Boca Raton, FL:
2133:(6H-SiC) worldwide in the 1980s.
1241:is most often conducted under an
52:A laboratory-grown synthetic SiC
9226:Graphite intercalation compounds
8989:
8977:
8965:
8954:
8953:
7760:
7751:
7742:
4613:Stringfellow, Gerald B. (1997).
3181:Byrappa, K.; Ohachi, T. (2003).
3154:Ohtani, N.; et al. (2001).
3078:10.1111/j.1551-2916.2010.03867.x
2845:from the original on May 4, 2017
2683:Haynes, William M., ed. (2011).
2627:Haynes, William M., ed. (2011).
2382:Silicon carbide, dissolved in a
1592:coefficient of thermal expansion
823:
776:
529:
45:
8924:Polycyclic aromatic hydrocarbon
4972:Journal of Alloys and Compounds
4797:. CRC Press. pp. 383–393.
4380:Journal of Electronic Materials
3907:"Production of Silicon Carbide"
3665:"Adept Armor - Silicon Carbide"
2926:. April 7, 1894. Archived from
2579:Reaction bonded silicon carbide
1610:, which can be doped n-type by
772:(at 25 °C , 100 kPa).
501:2.55 (infrared; all polytypes)
5301:11858/00-001M-0000-0010-FA05-E
4791:Deshmukh, Yeshvant V. (2005).
4010:10.1016/j.jcrysgro.2012.08.015
3925:"Ceramics for turbine engines"
3870:Handbook of Ceramic Composites
3187:. Springer. pp. 180–200.
2030:In 2008, the first commercial
1770:), silicon carbide is used in
1217:To form complexly shaped SiC,
1:
8849:Extraterrestrial liquid water
4980:10.1016/S0925-8388(01)01576-6
4957:10.1016/j.jnucmat.2009.03.013
4562:Amos Zeeberg (May 16, 2022).
3099:Properties of silicon carbide
1977:Henry Harrison Chase Dunwoody
1341:zinc blende crystal structure
1258:Polymorphs of silicon carbide
723:(US health exposure limits):
5673:. Rowman & Littlefield.
5415:10.1016/j.carbon.2009.03.051
5023:Ames, Nate (June 17, 2010).
4937:Journal of Nuclear Materials
4178:10.1016/0043-1648(87)90208-0
3821:10.1088/1468-6996/9/4/044201
3764:10.1088/1468-6996/9/4/044205
3532:10.1088/1468-6996/9/4/044204
3343:Journal of Materials Science
3102:. IET. p. 19; 170–180.
2984:Dunwoody, Henry H.C. (1906)
2039:) in the popular TO-247 and
1923:voltage-dependent resistance
1187:), and disilicon carbide (Si
27:Extremely hard semiconductor
9328:Inorganic silicon compounds
8080:Protonated hydrogen cyanide
4251:. CRC Press. p. 1108.
4245:Whitaker, Jerry C. (2005).
2948:Mabery, Charles F. (1900).
2439:Silicon carbide is used in
1991:in both research and early
1967:Electronic circuit elements
1645:. In contrast, 3C-SiC:B is
1566:that forms on the surface.
1175:Synthetic SiC Lely crystals
1075:Acheson patented the method
9364:
7065:
5333:Solid State Communications
5131:. CRC Press. p. 258.
4272:Bayliss, Colin R. (1999).
3643:10.1016/j.jpcs.2023.111860
3470:Journal of Applied Physics
3096:Harris, Gary Lynn (1995).
2993:(silicon carbide detector)
2194:
2144:of SiC, whereas GaN has a
2108:Ultraviolet LED (based on
2061:. Conferences such as the
2007:for high-power switching.
1876:diesel particulate filters
1658:Abrasive and cutting tools
1255:
420:40.096 g/mol
29:
8948:
8839:Earliest known life forms
8834:Diffuse interstellar band
8305:Protonated cyanoacetylene
8075:Protonated carbon dioxide
8035:Hydromagnesium isocyanide
7740:
6071:
6049:
5766:Asianometry (July 2022).
5579:10.1038/s41534-018-0066-2
5363:10.1016/j.ssc.2007.04.023
4400:10.1007/s11664-010-1096-5
3980:Journal of Crystal Growth
3581:Physical Review Materials
3412:"KABRA|DISCO Corporation"
3363:10.1007/s10853-006-6566-z
3274:SiC materials and devices
3210:SiC materials and devices
3184:Crystal growth technology
2991:Wireless telegraph system
2889:Encyclopædia Britannica,
2869:. Springer. p. 115.
2839:University College London
2243:Due to SiC's exceptional
2166:chemical vapor deposition
1666:Cutting disks made of SiC
1212:chemical vapor deposition
766:
717:
510:
505:
397:
377:
338:
89:
77:
65:
60:
44:
8884:Iron–sulfur world theory
8879:Photodissociation region
8582:Methyl-cyano-diacetylene
5626:10.1088/1367-2630/aaa752
5125:Rase, Howard F. (2000).
5079:. Elsevier. p. 89.
4895:10.3389/fphy.2022.898833
4469:Meißer, Michael (2013).
4314:10.1557/PROC-0911-B12-03
4248:The electronics handbook
3512:Sci. Technol. Adv. Mater
3425:Cheung, Rebecca (2006).
2664:pubchem.ncbi.nlm.nih.gov
2170:Herschel Space Telescope
2045:power electronic modules
1983:Power electronic devices
1782:, which was produced by
1252:Structure and properties
1235:polymer derived ceramics
568:Precautionary statements
9323:Group IV semiconductors
8959:Category:Astrochemistry
8549:, fullerene, buckyball)
8236:Cyanobutadiynyl radical
8211:Silicon-carbide cluster
8201:Protonated formaldehyde
5728:. University of London.
5648:"The best spinning rod"
5558:npj Quantum Information
5073:O'Donoghue, M. (2006).
4868:Napoli, Marzio (2022).
4844:"Silicon Carbide (SiC)"
4278:. Newnes. p. 250.
3271:Park, Yoon-Soo (1998).
2950:"Notes, On Carborundum"
2812:10.2138/am-2003-11-1223
2765:Moissan, Henri (1904).
2516:nitrogen-vacancy center
2441:carborundum printmaking
2435:Carborundum printmaking
2197:Thin-filament pyrometry
2183:Thin-filament pyrometry
2101:, in upstate New York.
1832:carbon-carbon composite
1602:Electrical conductivity
1349:heterogeneous catalysts
1057:Edward Goodrich Acheson
1012:César-Mansuète Despretz
965:Ferdinand Henri Moissan
957:Canyon Diablo meteorite
481:−12.8 × 10 cm/mol
475:Magnetic susceptibility
9038:Inorganic compounds of
8972:Outer space portal
8814:Circumstellar envelope
7779:Aluminium(I) hydroxide
7689:Phosphorus mononitride
7566:Aluminium monofluoride
7561:Aluminium monochloride
5596:New Journal of Physics
4821:. NASA. Archived from
4709:. NASA. Archived from
3458:2019, vol. 27 pp 80-90
3456:Additive Manufacturing
3386:Chemistry of Materials
3320:10.1002/adma.200306467
3239:2019, vol. 27 pp 80–90
3237:Additive Manufacturing
2863:Weimer, A. W. (1997).
2379:
2319:
2226:for gas heaters, etc.
2212:operating temperatures
2192:
2113:
1929:and the earth. When a
1848:Chevrolet Corvette ZR1
1827:
1734:
1667:
1580:semiconductor material
1556:thin-film interference
1444:Lattice constants (Å)
1314:
1291:
1282:
1273:
1237:or PDCs. Pyrolysis of
1176:
1121:
1113:
1052:
992:carbonaceous chondrite
929:
687:
438:3.16 g⋅cm (hex.)
8869:Interplanetary medium
8844:Extraterrestrial life
8482:Octatetraynyl radical
8100:Tricarbon monosulfide
7647:Magnesium monohydride
5493:Nature Communications
4125:10.1557/JMR.2004.0373
3854:U.S. patent 5,622,759
3249:Europe Makes Ceramics
2792:American Mineralogist
2569:Carborundum Universal
2559:in an electric kiln.
2377:
2313:
2190:
2107:
1825:
1788:abnormal grain growth
1729:
1702:and the grip tape on
1665:
1606:Silicon carbide is a
1312:
1290:
1281:
1272:
1174:
1119:
1111:
1046:
1039:Wide-scale production
927:
910:light-emitting diodes
686:
9333:Refractory materials
8996:Chemistry portal
8984:Astronomy portal
8930:RNA world hypothesis
8914:PAH world hypothesis
8607:Heptatrienyl radical
8539:Buckminsterfullerene
8427:Methylcyanoacetylene
7935:Silicon carbonitride
7910:Methylidynephosphane
7876:Magnesium isocyanide
7784:Aluminium isocyanide
7586:Carbon monophosphide
5240:10.1557/mrs.2012.231
4974:. 330–332: 408–413.
4874:Frontiers in Physics
4760:10.1364/AO.46.000483
4505:Fuji Electric Review
4218:Brown, John (1999).
2960:(Part II): 706–707.
2509:single-photon source
2453:intaglio printmaking
2384:basic oxygen furnace
2360:thermal conductivity
2300:light water reactors
2239:Nuclear Applications
1959:that use columns of
1942:. This spark gap is
1830:Silicon-infiltrated
1713:and silicon carbide
1507:Thermal conductivity
1377:Zinc blende (cubic)
1025:Paul Schuetzenberger
932:Naturally occurring
669:(fire diamond)
67:Preferred IUPAC name
9343:Superhard materials
8874:Interstellar medium
8854:Forbidden mechanism
8667:Hydrogen isocyanide
8357:Hexatriynyl radical
7940:c-Silicon dicarbide
7845:Hydrogen isocyanide
7709:Silicon monosulfide
7684:Phosphorus monoxide
7652:Methylidyne radical
7611:Fluoromethylidynium
7571:Aluminium(II) oxide
5618:2018NJPh...20b3035D
5570:2018npjQI...4...15K
5515:2015NatCo...6.7783L
5454:2014NatMa..13..151C
5407:2009Carbo..47.2026J
5355:2007SSCom.143...92D
5284:2009NatMa...8..203E
5232:2012MRSBu..37.1138R
5025:"SiC Fuel Cladding"
4949:2009JNuM..392..219L
4886:2022FrP....10.8833D
4752:2007ApOpt..46..483M
4677:1994SPIE.2199..263P
4450:on 26 November 2016
4392:2010JEMat..39..526C
4341:2004Natur.430..974M
4117:2004JMatR..19.2913O
4002:2012JCrGr.359...83H
3813:2008STAdM...9d4201Y
3756:2008STAdM...9d4205K
3707:1993ITED...40..645B
3635:2024JPCS..18711860N
3524:2008STAdM...9d4204M
3482:1994JAP....76.1363M
3398:10.1021/cm00027a007
3355:2006JMatS..41..823B
3312:2004AdM....16..706P
2987:U.S. patent 837,616
2966:10.1021/ja02048a014
2930:on January 23, 2009
2923:Scientific American
2904:U.S. patent 492,767
2901:Acheson, G. (1893)
2804:2003AmMin..88.1817D
2741:"C&L Inventory"
2467:Graphene production
2123:electroluminescence
2009:Bipolar transistors
1900:lightning arresters
1722:Structural material
1356:
1319:preceramic polymers
1264:
1239:preceramic polymers
1231:preceramic polymers
1219:preceramic polymers
988:Murchison meteorite
41:
9348:Synthetic minerals
9240:Oxides and related
8894:Molecules in stars
8864:Intergalactic dust
8809:Circumstellar dust
8751:Naphthalene cation
8686:Trihydrogen cation
8662:Hydrogen deuteride
8587:Methyltriacetylene
8422:Hexapentaenylidene
8241:E-Cyanomethanimine
8161:Cyclopropenylidene
8095:Tricarbon monoxide
8085:Silicon tricarbide
8055:Methylene amidogen
8045:Isothiocyanic acid
7960:Thioxoethenylidene
7920:Trihydrogen cation
7734:Titanium(II) oxide
7694:Potassium chloride
7673:Sulfur mononitride
7616:Helium hydride ion
7591:Carbon monosulfide
5523:10.1038/ncomms8783
5166:10.1007/BF02071177
5059:2016-09-10 at the
4916:. 30 November 2022
4568:The New York Times
4075:"Top 10 Fast Cars"
3911:siliconcarbide.net
3300:Advanced Materials
3254:2020-08-07 at the
3043:10.1007/bf01287542
2798:(11–12): 1817–21.
2530:Fishing rod guides
2380:
2320:
2292:composite material
2285:Pebble Bed Reactor
2193:
2121:The phenomenon of
2114:
2001:junction-gate FETs
1840:Porsche Carrera GT
1828:
1735:
1678:processes such as
1676:abrasive machining
1668:
1374:Crystal structure
1354:
1315:
1292:
1283:
1274:
1262:
1227:poly(methylsilyne)
1177:
1122:
1114:
1090:Henry Joseph Round
1053:
1051:'s LED experiments
930:
920:Natural occurrence
889:to form very hard
799:Infobox references
758:(Immediate danger)
688:
39:
9313:Diamond simulants
9303:Ceramic materials
9280:
9279:
9004:
9003:
8919:Pseudo-panspermia
8615:
8614:
8562:Cyanodecapentayne
8502:N-Methylformamide
8477:Methyldiacetylene
8402:Aminoacetonitrile
8372:Methyl isocyanate
8290:Methyl isocyanide
8171:Isocyanoacetylene
8151:Cyanoformaldehyde
8030:Hydrogen peroxide
7915:Potassium cyanide
7871:Magnesium cyanide
7824:Disilicon carbide
7819:Dicarbon monoxide
7626:Hydrogen fluoride
7621:Hydrogen chloride
7502:
7501:
7496:
7495:
6007:
6006:
5806:Silicon compounds
5742:"Silicon carbide"
5696:"Silicon carbide"
5680:978-0-7627-9502-4
5226:(12): 1138–1147.
5138:978-0-8493-9417-1
5086:978-0-7506-5856-0
5063:, Jett Industries
5035:on April 25, 2012
4804:978-0-8493-3405-4
4685:10.1117/12.176195
4626:978-0-12-752156-5
4482:978-3-7315-0083-4
4432:on 15 March 2016.
4335:(7003): 974–975.
4285:978-0-7506-4059-6
4258:978-0-8493-1889-4
4231:978-0-08-053187-8
4204:978-3-527-62906-0
4147:"SiC Lubrication"
4111:(10): 2913–2921.
4032:"Silicon Carbide"
3884:978-1-4020-8133-0
3715:10.1109/16.199372
3671:. 6 December 2022
3438:978-1-86094-624-0
3284:978-0-12-752160-2
3219:978-981-256-835-9
3194:978-3-540-00367-0
3109:978-0-85296-870-3
3072:(10): 3159–3167.
3037:(9–10): 521–523.
2876:978-0-412-54060-8
2722:. Ioffe Institute
2693:. p. 4.135.
2660:"Silicon carbide"
2177:space observatory
1882:Foundry crucibles
1688:water-jet cutting
1638:Superconductivity
1596:phase transitions
1560:passivation layer
1548:
1547:
1333:crystal structure
1307:
1306:
1201:induction heating
1047:A replication of
1003:Early experiments
980:carbon-rich stars
899:bulletproof vests
873:. A wide bandgap
817:), also known as
807:Chemical compound
805:
804:
554:Hazard statements
464:Electron mobility
351:InChI=1S/CSi/c1-2
307:CompTox Dashboard
131:Interactive image
16:(Redirected from
9355:
9043:and related ions
9031:
9024:
9017:
9008:
8994:
8993:
8992:
8982:
8981:
8980:
8970:
8969:
8968:
8957:
8956:
8904:Organic compound
8804:Chemical formula
8709:Dihydroxyacetone
8657:Hydrogen cyanide
8342:Cyanodiacetylene
8196:Propadienylidene
8090:Thioformaldehyde
7965:Titanium dioxide
7930:Sodium hydroxide
7851:Hydrogen sulfide
7839:Hydrogen cyanide
7799:Carbonyl sulfide
7764:
7755:
7746:
7704:Silicon monoxide
7637:Hydroxyl radical
7549:
7529:
7522:
7515:
7506:
6407:
6053:
6034:
6027:
6020:
6011:
5799:
5792:
5785:
5776:
5771:
5762:
5749:
5737:
5729:
5711:
5710:
5708:
5706:
5691:
5685:
5684:
5664:
5658:
5657:
5655:
5654:
5644:
5638:
5637:
5611:
5590:
5584:
5583:
5581:
5549:
5543:
5542:
5508:
5488:
5482:
5481:
5462:10.1038/nmat3806
5442:Nature Materials
5433:
5427:
5426:
5401:(8): 2026–2031.
5389:
5383:
5382:
5348:
5328:
5322:
5321:
5303:
5292:10.1038/nmat2382
5272:Nature Materials
5266:
5260:
5259:
5217:
5208:
5202:
5201:
5199:
5198:
5184:
5178:
5177:
5149:
5143:
5142:
5122:
5116:
5115:
5113:
5112:
5103:. Archived from
5097:
5091:
5090:
5070:
5064:
5050:
5044:
5043:
5041:
5040:
5031:. Archived from
5020:
5014:
5013:
5011:
5010:
5001:. Archived from
4990:
4984:
4983:
4967:
4961:
4960:
4932:
4926:
4925:
4923:
4921:
4906:
4900:
4899:
4897:
4865:
4859:
4858:
4856:
4854:
4848:Precise Ceramics
4840:
4834:
4833:
4831:
4830:
4815:
4809:
4808:
4788:
4782:
4781:
4771:
4737:
4728:
4722:
4721:
4719:
4718:
4703:
4697:
4696:
4659:
4653:
4652:
4650:
4648:
4637:
4631:
4630:
4610:
4601:
4600:
4598:
4596:
4590:"Yellow SiC LED"
4588:Klipstein, Don.
4585:
4579:
4578:
4576:
4574:
4559:
4553:
4552:
4543:
4541:
4535:
4528:
4519:
4513:
4512:
4502:
4493:
4487:
4486:
4466:
4460:
4459:
4457:
4455:
4440:
4434:
4433:
4418:
4412:
4411:
4375:
4369:
4368:
4324:
4318:
4317:
4296:
4290:
4289:
4269:
4263:
4262:
4242:
4236:
4235:
4215:
4209:
4208:
4188:
4182:
4181:
4172:(1–2): 185–191.
4161:
4155:
4154:
4143:
4137:
4136:
4100:
4094:
4093:
4091:
4090:
4081:. Archived from
4071:
4065:
4064:
4053:
4047:
4046:
4044:
4043:
4028:
4022:
4021:
3995:
3975:
3969:
3968:
3966:
3965:
3950:
3944:
3943:
3941:
3940:
3931:. Archived from
3921:
3915:
3914:
3903:
3897:
3896:
3864:
3858:
3856:
3849:
3843:
3842:
3832:
3792:
3786:
3785:
3775:
3749:
3725:
3719:
3718:
3690:
3681:
3680:
3678:
3676:
3661:
3655:
3654:
3618:
3607:
3606:
3596:
3572:
3566:
3560:
3554:
3553:
3543:
3503:
3494:
3493:
3490:10.1063/1.358463
3465:
3459:
3449:
3443:
3442:
3422:
3416:
3415:
3408:
3402:
3401:
3381:
3375:
3374:
3338:
3332:
3331:
3295:
3289:
3288:
3268:
3259:
3246:
3240:
3230:
3224:
3223:
3205:
3199:
3198:
3178:
3172:
3171:
3169:
3163:. Archived from
3162:
3151:
3145:
3139:
3133:
3132:
3120:
3114:
3113:
3093:
3082:
3081:
3061:
3055:
3054:
3026:
3020:
3019:
3017:
3016:
3007:. Archived from
3000:
2994:
2989:
2982:
2976:
2975:
2973:
2972:
2945:
2939:
2938:
2936:
2935:
2914:
2908:
2906:
2899:
2893:
2887:
2881:
2880:
2860:
2854:
2853:
2851:
2850:
2830:
2824:
2823:
2787:
2781:
2780:
2762:
2756:
2755:
2753:
2751:
2737:
2731:
2730:
2728:
2727:
2716:
2705:
2704:
2680:
2674:
2673:
2671:
2670:
2655:
2649:
2648:
2637:. p. 4.88.
2624:
2615:
2614:
2602:
2557:reduction firing
2429:maleic anhydride
2417:catalyst support
2410:Catalyst support
2386:used for making
2370:Steel production
2340:refractive index
2290:Silicon carbide
2249:nuclear reactors
2206:Heating elements
2142:indirect bandgap
2015:were described.
1931:lightning strike
1896:surge protection
1890:Electric systems
1818:Automobile parts
1400:
1357:
1265:
1243:inert atmosphere
1130:diamond simulant
864:
863:
860:
859:
856:
853:
850:
847:
844:
841:
838:
835:
832:
829:
789:
783:
780:
779:
708:
701:
694:
679:
659:
655:
651:
647:
643:
639:
635:
631:
627:
623:
619:
615:
611:
607:
603:
599:
595:
591:
587:
583:
579:
575:
561:
533:
488:Refractive index
405:Chemical formula
368:InChI=1/CSi/c1-2
331:
330:
315:
313:
297:
261:
250:
239:
220:Gmelin Reference
203:
195:
184:
173:
153:
133:
109:
49:
42:
40:Silicon carbide
21:
9363:
9362:
9358:
9357:
9356:
9354:
9353:
9352:
9283:
9282:
9281:
9276:
9257:Metal carbonyls
9235:
9214:
9172:
9163:
9159:
9151:
9147:
9139:
9131:
9123:
9119:
9101:
9093:
9085:
9077:
9069:
9044:
9035:
9005:
9000:
8990:
8988:
8978:
8976:
8966:
8964:
8944:
8770:
8746:
8737:
8690:
8680:
8623:
8611:
8592:Propionaldehyde
8567:Ethylene glycol
8556:
8548:
8544:
8515:
8513:
8506:
8462:Cyanohexatriyne
8448:
8441:
8388:
8381:
8316:
8309:
8269:
8222:
8215:
8186:Methoxy radical
8116:
8109:
8105:Thiocyanic acid
7986:
7979:
7889:
7829:Ethynyl radical
7765:
7759:
7758:
7757:
7756:
7750:
7749:
7748:
7747:
7738:
7729:Sulfur monoxide
7714:Sodium chloride
7699:Silicon carbide
7606:Diatomic carbon
7596:Carbon monoxide
7538:
7533:
7503:
7498:
7497:
7462:
7454:
7429:
7425:
7421:
7417:
7413:
7409:
7405:
7401:
7397:
7384:
7380:
7376:
7372:
7367:
7360:
7356:
7352:
7348:
7344:
7340:
7335:
7326:
7319:
7315:
7311:
7307:
7302:
7294:
7290:
7286:
7282:
7277:
7267:
7263:
7259:
7255:
7251:
7247:
7242:
7232:
7228:
7224:
7220:
7216:
7212:
7208:
7204:
7200:
7196:
7192:
7182:
7178:
7174:
7170:
7166:
7162:
7157:
7150:
7146:
7138:
7134:
7130:
7126:
7122:
7118:
7113:
7105:
7101:
7099:
7095:
7091:
7087:
7083:
7078:
6961:
6957:
6953:
6949:
6940:
6936:
6931:
6923:
6919:
6915:
6911:
6907:
6900:
6896:
6892:
6888:
6884:
6880:
6870:
6866:
6856:
6852:
6848:
6844:
6840:
6834:
6816:
6809:
6805:
6801:
6779:
6775:
6771:
6767:
6763:
6754:
6750:
6746:
6742:
6738:
6734:
6730:
6721:
6717:
6713:
6709:
6705:
6693:
6689:
6685:
6681:
6679:
6671:
6667:
6663:
6655:
6651:
6647:
6643:
6638:
6632:
6628:
6624:
6620:
6611:
6607:
6603:
6599:
6595:
6591:
6587:
6575:
6557:
6549:
6540:
6536:
6534:
6524:
6512:
6508:
6504:
6500:
6496:
6492:
6488:
6484:
6480:
6476:
6472:
6468:
6464:
6448:
6442:
6435:
6422:
6417:
6414:
6409:
6406:
6402:
6398:
6396:
6392:
6390:
6383:
6379:
6374:
6370:
6364:
6360:
6356:
6351:
6340:
6336:
6332:
6326:
6319:
6315:
6311:
6307:
6303:
6299:
6295:
6289:
6281:
6276:
6270:
6266:
6262:
6258:
6254:
6250:
6238:
6233:
6216:
6206:
6204:
6194:
6190:
6188:
6171:
6153:
6145:
6135:
6131:
6129:
6125:
6115:
6106:
6104:
6099:
6097:
6088:
6062:
6060:
6045:
6038:
6008:
6003:
5998:
5989:
5985:
5976:
5972:
5964:
5960:
5952:
5948:
5940:
5932:
5924:
5916:
5908:
5900:
5892:
5879:
5864:
5860:
5856:
5848:
5844:
5829:
5808:
5803:
5765:
5752:
5740:
5732:
5723:
5720:
5715:
5714:
5704:
5702:
5693:
5692:
5688:
5681:
5666:
5665:
5661:
5652:
5650:
5646:
5645:
5641:
5592:
5591:
5587:
5551:
5550:
5546:
5490:
5489:
5485:
5435:
5434:
5430:
5391:
5390:
5386:
5339:(1–2): 92–100.
5330:
5329:
5325:
5268:
5267:
5263:
5215:
5210:
5209:
5205:
5196:
5194:
5186:
5185:
5181:
5151:
5150:
5146:
5139:
5124:
5123:
5119:
5110:
5108:
5099:
5098:
5094:
5087:
5072:
5071:
5067:
5061:Wayback Machine
5052:Teague, Tyler.
5051:
5047:
5038:
5036:
5022:
5021:
5017:
5008:
5006:
4992:
4991:
4987:
4969:
4968:
4964:
4934:
4933:
4929:
4919:
4917:
4908:
4907:
4903:
4867:
4866:
4862:
4852:
4850:
4842:
4841:
4837:
4828:
4826:
4817:
4816:
4812:
4805:
4790:
4789:
4785:
4735:
4730:
4729:
4725:
4716:
4714:
4705:
4704:
4700:
4661:
4660:
4656:
4646:
4644:
4639:
4638:
4634:
4627:
4612:
4611:
4604:
4594:
4592:
4587:
4586:
4582:
4572:
4570:
4561:
4560:
4556:
4539:
4537:
4533:
4526:
4521:
4520:
4516:
4500:
4495:
4494:
4490:
4483:
4468:
4467:
4463:
4453:
4451:
4442:
4441:
4437:
4420:
4419:
4415:
4377:
4376:
4372:
4349:10.1038/430974a
4326:
4325:
4321:
4302:MRS Proceedings
4298:
4297:
4293:
4286:
4271:
4270:
4266:
4259:
4244:
4243:
4239:
4232:
4217:
4216:
4212:
4205:
4190:
4189:
4185:
4163:
4162:
4158:
4145:
4144:
4140:
4105:MRS Proceedings
4102:
4101:
4097:
4088:
4086:
4073:
4072:
4068:
4055:
4054:
4050:
4041:
4039:
4030:
4029:
4025:
3977:
3976:
3972:
3963:
3961:
3952:
3951:
3947:
3938:
3936:
3923:
3922:
3918:
3905:
3904:
3900:
3885:
3866:
3865:
3861:
3852:
3850:
3846:
3794:
3793:
3789:
3727:
3726:
3722:
3692:
3691:
3684:
3674:
3672:
3663:
3662:
3658:
3620:
3619:
3610:
3574:
3573:
3569:
3561:
3557:
3505:
3504:
3497:
3467:
3466:
3462:
3450:
3446:
3439:
3424:
3423:
3419:
3410:
3409:
3405:
3383:
3382:
3378:
3340:
3339:
3335:
3297:
3296:
3292:
3285:
3270:
3269:
3262:
3256:Wayback Machine
3247:
3243:
3231:
3227:
3220:
3207:
3206:
3202:
3195:
3180:
3179:
3175:
3167:
3160:
3153:
3152:
3148:
3142:Lely SiC Wafers
3140:
3136:
3122:
3121:
3117:
3110:
3095:
3094:
3085:
3063:
3062:
3058:
3028:
3027:
3023:
3014:
3012:
3002:
3001:
2997:
2985:
2983:
2979:
2970:
2968:
2947:
2946:
2942:
2933:
2931:
2916:
2915:
2911:
2902:
2900:
2896:
2888:
2884:
2877:
2862:
2861:
2857:
2848:
2846:
2832:
2831:
2827:
2789:
2788:
2784:
2764:
2763:
2759:
2749:
2747:
2739:
2738:
2734:
2725:
2723:
2718:
2717:
2708:
2701:
2682:
2681:
2677:
2668:
2666:
2657:
2656:
2652:
2645:
2626:
2625:
2618:
2604:
2603:
2592:
2587:
2565:
2541:
2532:
2525:
2521:
2501:
2499:Quantum physics
2469:
2437:
2412:
2372:
2318:engagement ring
2308:
2269:
2257:medical imaging
2241:
2232:
2208:
2199:
2185:
2154:
2138:gallium nitride
2119:
2084:Beginning with
2072:Packaging: SiC
1997:Schottky diodes
1993:mass production
1985:
1969:
1917:
1913:
1892:
1884:
1820:
1802:
1798:
1793:Silicon nitride
1772:composite armor
1732:ballistic vests
1724:
1711:aluminium oxide
1696:aluminium oxide
1660:
1655:
1604:
1577:
1564:silicon dioxide
1526:
1510:
1458:Density (g/cm)
1450:3.0730; 10.053
1422:
1418:
1411:
1407:
1398:
1396:
1260:
1254:
1190:
1186:
1150:
1106:
1041:
1005:
1000:
922:
826:
822:
811:Silicon carbide
808:
801:
796:
795:
794: ?)
785:
781:
777:
773:
759:
746:
733:
713:
712:
711:
710:
703:
696:
689:
685:
677:
570:
556:
542:
526:
498:
496:
478:
407:
393:
390:
385:
384:
373:
370:
369:
363:
362:
356:
355:
352:
346:
345:
334:
316:
309:
300:
280:
264:
251:
237:Silicon+carbide
222:
213:
176:
156:
136:
123:
112:
99:
85:
81:
73:
72:
71:Silicon carbide
56:
50:
35:
28:
23:
22:
18:Silicon Carbide
15:
12:
11:
5:
9361:
9359:
9351:
9350:
9345:
9340:
9338:Semiconductors
9335:
9330:
9325:
9320:
9315:
9310:
9305:
9300:
9295:
9285:
9284:
9278:
9277:
9275:
9274:
9269:
9264:
9259:
9254:
9249:
9243:
9241:
9237:
9236:
9234:
9233:
9228:
9222:
9220:
9219:Nanostructures
9216:
9215:
9213:
9212:
9207:
9202:
9197:
9192:
9187:
9180:
9178:
9174:
9173:
9171:
9170:
9165:
9161:
9157:
9153:
9149:
9145:
9141:
9137:
9133:
9129:
9125:
9121:
9117:
9113:
9108:
9103:
9099:
9095:
9091:
9087:
9083:
9079:
9075:
9071:
9067:
9063:
9058:
9052:
9050:
9046:
9045:
9036:
9034:
9033:
9026:
9019:
9011:
9002:
9001:
8999:
8998:
8986:
8974:
8962:
8949:
8946:
8945:
8943:
8942:
8937:
8932:
8927:
8921:
8916:
8911:
8906:
8901:
8896:
8891:
8886:
8881:
8876:
8871:
8866:
8861:
8856:
8851:
8846:
8841:
8836:
8831:
8829:Cosmochemistry
8826:
8821:
8816:
8811:
8806:
8801:
8796:
8794:Astrochemistry
8791:
8786:
8780:
8778:
8772:
8771:
8769:
8768:
8763:
8758:
8753:
8748:
8744:
8740:
8735:
8731:
8726:
8721:
8716:
8711:
8706:
8700:
8698:
8692:
8691:
8689:
8688:
8683:
8678:
8674:
8669:
8664:
8659:
8654:
8649:
8647:Formyl radical
8644:
8639:
8633:
8627:
8625:
8617:
8616:
8613:
8612:
8610:
8609:
8604:
8599:
8594:
8589:
8584:
8579:
8577:Methyl acetate
8574:
8569:
8564:
8559:
8554:
8550:
8546:
8542:
8536:
8531:
8526:
8520:
8518:
8508:
8507:
8505:
8504:
8499:
8494:
8489:
8484:
8479:
8474:
8469:
8467:Dimethyl ether
8464:
8459:
8453:
8451:
8443:
8442:
8440:
8439:
8434:
8432:Methyl formate
8429:
8424:
8419:
8417:Glycolaldehyde
8414:
8409:
8404:
8399:
8393:
8391:
8383:
8382:
8380:
8379:
8374:
8369:
8364:
8359:
8354:
8352:Glycolonitrile
8349:
8347:Ethylene oxide
8344:
8339:
8338:
8337:
8327:
8321:
8319:
8311:
8310:
8308:
8307:
8302:
8297:
8292:
8287:
8282:
8277:
8272:
8267:
8263:
8258:
8253:
8248:
8246:Cyclopropenone
8243:
8238:
8233:
8227:
8225:
8217:
8216:
8214:
8213:
8208:
8203:
8198:
8193:
8188:
8183:
8178:
8173:
8168:
8163:
8158:
8153:
8148:
8146:Cyanoacetylene
8143:
8138:
8133:
8128:
8121:
8119:
8111:
8110:
8108:
8107:
8102:
8097:
8092:
8087:
8082:
8077:
8072:
8067:
8065:Methyl radical
8062:
8057:
8052:
8047:
8042:
8040:Isocyanic acid
8037:
8032:
8027:
8022:
8017:
8012:
8007:
8005:Isocyanic acid
8002:
7997:
7991:
7989:
7981:
7980:
7978:
7977:
7972:
7967:
7962:
7957:
7952:
7950:Sulfur dioxide
7947:
7942:
7937:
7932:
7927:
7925:Sodium cyanide
7922:
7917:
7912:
7907:
7902:
7897:
7892:
7887:
7883:
7878:
7873:
7868:
7863:
7858:
7853:
7848:
7842:
7836:
7834:Formyl radical
7831:
7826:
7821:
7816:
7811:
7806:
7801:
7796:
7794:Carbon dioxide
7791:
7786:
7781:
7775:
7773:
7767:
7766:
7741:
7739:
7737:
7736:
7731:
7726:
7721:
7716:
7711:
7706:
7701:
7696:
7691:
7686:
7681:
7675:
7670:
7665:
7659:
7654:
7649:
7644:
7642:Iron(II) oxide
7639:
7634:
7628:
7623:
7618:
7613:
7608:
7603:
7598:
7593:
7588:
7583:
7578:
7573:
7568:
7563:
7557:
7555:
7546:
7540:
7539:
7534:
7532:
7531:
7524:
7517:
7509:
7500:
7499:
7494:
7493:
7490:
7487:
7484:
7481:
7478:
7475:
7472:
7469:
7464:
7460:
7456:
7452:
7448:
7443:
7438:
7435:
7431:
7430:
7427:
7423:
7419:
7415:
7411:
7407:
7403:
7399:
7395:
7389:
7386:
7382:
7378:
7374:
7370:
7365:
7361:
7358:
7354:
7350:
7346:
7342:
7338:
7333:
7329:
7324:
7320:
7317:
7313:
7309:
7305:
7300:
7296:
7292:
7288:
7284:
7280:
7275:
7271:
7268:
7265:
7261:
7257:
7253:
7249:
7245:
7240:
7236:
7233:
7230:
7226:
7222:
7218:
7214:
7210:
7206:
7202:
7198:
7194:
7190:
7184:
7180:
7176:
7172:
7168:
7164:
7160:
7155:
7151:
7148:
7144:
7136:
7132:
7128:
7124:
7120:
7116:
7111:
7107:
7103:
7100:
7097:
7093:
7089:
7085:
7081:
7076:
7072:
7068:
7067:
7064:
7061:
7060:
7057:
7054:
7051:
7048:
7045:
7042:
7039:
7036:
7033:
7030:
7027:
7024:
7021:
7018:
7015:
7012:
7009:
7006:
7002:
7001:
6998:
6995:
6992:
6989:
6986:
6983:
6980:
6977:
6972:
6967:
6962:
6959:
6955:
6951:
6947:
6941:
6938:
6934:
6929:
6925:
6921:
6917:
6913:
6909:
6905:
6901:
6898:
6894:
6890:
6886:
6882:
6878:
6872:
6868:
6864:
6860:
6857:
6854:
6850:
6846:
6842:
6838:
6832:
6828:
6822:
6821:
6818:
6814:
6810:
6807:
6803:
6799:
6796:
6793:
6790:
6787:
6784:
6781:
6777:
6773:
6769:
6765:
6761:
6755:
6752:
6748:
6744:
6740:
6736:
6732:
6728:
6722:
6719:
6715:
6711:
6707:
6703:
6697:
6694:
6691:
6687:
6683:
6677:
6673:
6669:
6665:
6661:
6657:
6653:
6649:
6645:
6641:
6636:
6630:
6626:
6622:
6618:
6612:
6609:
6605:
6601:
6597:
6593:
6589:
6585:
6579:
6577:
6573:
6569:
6563:
6562:
6559:
6555:
6551:
6547:
6544:
6532:
6528:
6519:
6516:
6513:
6510:
6506:
6502:
6498:
6494:
6490:
6486:
6482:
6478:
6474:
6470:
6466:
6462:
6459:
6450:
6446:
6440:
6433:
6425:
6420:
6412:
6388:
6384:
6381:
6377:
6372:
6368:
6362:
6358:
6354:
6349:
6341:
6338:
6334:
6330:
6324:
6320:
6317:
6313:
6309:
6305:
6301:
6297:
6293:
6287:
6283:
6279:
6271:
6268:
6264:
6260:
6256:
6252:
6248:
6242:
6240:
6236:
6228:
6222:
6221:
6218:
6214:
6210:
6202:
6198:
6186:
6182:
6177:
6174:
6169:
6165:
6159:
6158:
6155:
6151:
6147:
6143:
6139:
6127:
6123:
6119:
6110:
6102:
6095:
6091:
6086:
6082:
6076:
6075:
6072:
6070:
6068:
6066:
6058:
6051:
6050:
6047:
6046:
6039:
6037:
6036:
6029:
6022:
6014:
6005:
6004:
6002:
6001:
5996:
5992:
5987:
5983:
5979:
5974:
5970:
5966:
5962:
5958:
5954:
5950:
5946:
5942:
5938:
5934:
5930:
5926:
5922:
5918:
5914:
5910:
5906:
5902:
5898:
5894:
5890:
5886:
5881:
5877:
5872:
5870:
5866:
5865:
5863:
5862:
5858:
5854:
5850:
5846:
5842:
5837:
5835:
5831:
5830:
5828:
5827:
5822:
5816:
5814:
5810:
5809:
5804:
5802:
5801:
5794:
5787:
5779:
5773:
5772:
5763:
5750:
5738:
5730:
5719:
5718:External links
5716:
5713:
5712:
5694:Hansen, Tony.
5686:
5679:
5659:
5639:
5585:
5544:
5483:
5448:(2): 151–156.
5428:
5384:
5323:
5278:(3): 203–207.
5261:
5203:
5179:
5144:
5137:
5117:
5092:
5085:
5065:
5045:
5015:
4985:
4962:
4943:(2): 219–224.
4927:
4901:
4860:
4835:
4810:
4803:
4783:
4740:Applied Optics
4723:
4698:
4654:
4632:
4625:
4602:
4580:
4554:
4514:
4488:
4481:
4461:
4435:
4413:
4386:(5): 526–529.
4370:
4319:
4291:
4284:
4264:
4257:
4237:
4230:
4210:
4203:
4183:
4156:
4138:
4095:
4066:
4048:
4023:
3970:
3945:
3916:
3898:
3883:
3859:
3844:
3787:
3720:
3701:(3): 645–655.
3682:
3656:
3608:
3567:
3555:
3495:
3460:
3444:
3437:
3417:
3403:
3392:(3): 260–279.
3376:
3349:(3): 823–839.
3333:
3306:(8): 706–709.
3290:
3283:
3260:
3241:
3225:
3218:
3200:
3193:
3173:
3170:on 2010-12-17.
3146:
3134:
3115:
3108:
3083:
3056:
3021:
2995:
2977:
2940:
2909:
2894:
2882:
2875:
2855:
2825:
2782:
2772:Comptes rendus
2757:
2745:echa.europa.eu
2732:
2706:
2699:
2675:
2650:
2643:
2616:
2589:
2588:
2586:
2583:
2582:
2581:
2576:
2571:
2564:
2561:
2540:
2539:Pottery glazes
2537:
2531:
2528:
2523:
2519:
2500:
2497:
2491:applications.
2488:graphitization
2468:
2465:
2436:
2433:
2411:
2408:
2404:trace elements
2371:
2368:
2344:cubic zirconia
2307:
2304:
2268:
2265:
2240:
2237:
2231:
2230:Heat shielding
2228:
2216:heat treatment
2207:
2204:
2195:Main article:
2184:
2181:
2153:
2150:
2146:direct bandgap
2118:
2115:
2082:
2081:
2070:
1999:, followed by
1984:
1981:
1968:
1965:
1915:
1911:
1891:
1888:
1883:
1880:
1844:Bugatti Veyron
1819:
1816:
1800:
1796:
1784:Pinnacle Armor
1723:
1720:
1659:
1656:
1654:
1651:
1618:and p-type by
1603:
1600:
1584:electric field
1575:
1546:
1545:
1542:
1531:
1528:
1522:
1521:
1518:
1515:
1512:
1503:
1502:
1499:
1496:
1493:
1486:
1485:
1482:
1479:
1476:
1469:
1468:
1465:
1462:
1459:
1455:
1454:
1453:3.0810; 15.12
1451:
1448:
1445:
1441:
1440:
1437:
1434:
1431:
1429:Pearson symbol
1425:
1424:
1420:
1416:
1413:
1409:
1405:
1402:
1394:
1391:
1385:
1384:
1381:
1378:
1375:
1371:
1370:
1367:
1364:
1361:
1305:
1304:
1301:
1298:
1294:
1293:
1284:
1275:
1256:Main article:
1253:
1250:
1188:
1184:
1148:
1105:
1102:
1040:
1037:
1036:
1035:
1028:
1022:
1015:
1004:
1001:
999:
996:
984:beta-polymorph
944:deposits, and
921:
918:
895:ceramic plates
806:
803:
802:
797:
775:
774:
770:standard state
767:
764:
763:
760:
754:
751:
750:
747:
741:
738:
737:
734:
728:
725:
724:
715:
714:
704:
697:
690:
675:
674:
673:
672:
670:
661:
660:
618:P305+P351+P338
571:
566:
563:
562:
557:
552:
549:
548:
543:
538:
535:
534:
527:
522:
519:
518:
508:
507:
503:
502:
499:
494:
486:
483:
482:
479:
473:
470:
469:
466:
460:
459:
456:
450:
449:
446:
440:
439:
436:
430:
429:
426:
422:
421:
418:
412:
411:
408:
403:
400:
399:
395:
394:
392:
391:
388:
380:
379:
378:
375:
374:
372:
371:
367:
366:
364:
360:
359:
357:
353:
350:
349:
341:
340:
339:
336:
335:
333:
332:
319:
317:
305:
302:
301:
299:
298:
290:
288:
282:
281:
279:
278:
274:
272:
266:
265:
263:
262:
254:
252:
244:
241:
240:
233:
227:
226:
223:
218:
215:
214:
212:
211:
207:
205:
197:
196:
186:
178:
177:
175:
174:
166:
164:
158:
157:
155:
154:
146:
144:
138:
137:
135:
134:
126:
124:
117:
114:
113:
111:
110:
102:
100:
95:
92:
91:
87:
86:
79:
75:
74:
70:
69:
63:
62:
58:
57:
51:
26:
24:
14:
13:
10:
9:
6:
4:
3:
2:
9360:
9349:
9346:
9344:
9341:
9339:
9336:
9334:
9331:
9329:
9326:
9324:
9321:
9319:
9316:
9314:
9311:
9309:
9306:
9304:
9301:
9299:
9296:
9294:
9291:
9290:
9288:
9273:
9270:
9268:
9265:
9263:
9262:Carbonic acid
9260:
9258:
9255:
9253:
9250:
9248:
9245:
9244:
9242:
9238:
9232:
9229:
9227:
9224:
9223:
9221:
9217:
9211:
9210:Thiofulminate
9208:
9206:
9203:
9201:
9198:
9196:
9193:
9191:
9188:
9185:
9182:
9181:
9179:
9175:
9169:
9166:
9164:
9154:
9152:
9142:
9140:
9134:
9132:
9126:
9124:
9114:
9112:
9109:
9107:
9104:
9102:
9096:
9094:
9088:
9086:
9080:
9078:
9072:
9070:
9064:
9062:
9059:
9057:
9054:
9053:
9051:
9047:
9042:
9039:
9032:
9027:
9025:
9020:
9018:
9013:
9012:
9009:
8997:
8987:
8985:
8975:
8973:
8963:
8961:
8960:
8951:
8950:
8947:
8941:
8938:
8936:
8933:
8931:
8928:
8925:
8922:
8920:
8917:
8915:
8912:
8910:
8907:
8905:
8902:
8900:
8897:
8895:
8892:
8890:
8887:
8885:
8882:
8880:
8877:
8875:
8872:
8870:
8867:
8865:
8862:
8860:
8859:Homochirality
8857:
8855:
8852:
8850:
8847:
8845:
8842:
8840:
8837:
8835:
8832:
8830:
8827:
8825:
8822:
8820:
8817:
8815:
8812:
8810:
8807:
8805:
8802:
8800:
8797:
8795:
8792:
8790:
8787:
8785:
8782:
8781:
8779:
8777:
8773:
8767:
8764:
8762:
8759:
8757:
8754:
8752:
8749:
8747:
8741:
8739:
8732:
8730:
8727:
8725:
8722:
8720:
8717:
8715:
8714:Methoxyethane
8712:
8710:
8707:
8705:
8702:
8701:
8699:
8697:
8693:
8687:
8684:
8682:
8675:
8673:
8670:
8668:
8665:
8663:
8660:
8658:
8655:
8653:
8650:
8648:
8645:
8643:
8640:
8637:
8634:
8632:
8629:
8628:
8626:
8622:
8618:
8608:
8605:
8603:
8600:
8598:
8597:Butyronitrile
8595:
8593:
8590:
8588:
8585:
8583:
8580:
8578:
8575:
8573:
8572:Ethyl formate
8570:
8568:
8565:
8563:
8560:
8558:
8551:
8540:
8537:
8535:
8532:
8530:
8527:
8525:
8522:
8521:
8519:
8517:
8509:
8503:
8500:
8498:
8497:Propionitrile
8495:
8493:
8490:
8488:
8485:
8483:
8480:
8478:
8475:
8473:
8470:
8468:
8465:
8463:
8460:
8458:
8455:
8454:
8452:
8450:
8444:
8438:
8435:
8433:
8430:
8428:
8425:
8423:
8420:
8418:
8415:
8413:
8410:
8408:
8405:
8403:
8400:
8398:
8395:
8394:
8392:
8390:
8384:
8378:
8377:Vinyl alcohol
8375:
8373:
8370:
8368:
8365:
8363:
8360:
8358:
8355:
8353:
8350:
8348:
8345:
8343:
8340:
8336:
8335:Vinyl cyanide
8333:
8332:
8331:
8330:Acrylonitrile
8328:
8326:
8323:
8322:
8320:
8318:
8312:
8306:
8303:
8301:
8298:
8296:
8295:Pentynylidyne
8293:
8291:
8288:
8286:
8283:
8281:
8278:
8276:
8273:
8271:
8264:
8262:
8259:
8257:
8254:
8252:
8249:
8247:
8244:
8242:
8239:
8237:
8234:
8232:
8229:
8228:
8226:
8224:
8218:
8212:
8209:
8207:
8204:
8202:
8199:
8197:
8194:
8192:
8191:Methylenimine
8189:
8187:
8184:
8182:
8179:
8177:
8174:
8172:
8169:
8167:
8164:
8162:
8159:
8157:
8154:
8152:
8149:
8147:
8144:
8142:
8139:
8137:
8134:
8132:
8129:
8126:
8123:
8122:
8120:
8118:
8112:
8106:
8103:
8101:
8098:
8096:
8093:
8091:
8088:
8086:
8083:
8081:
8078:
8076:
8073:
8071:
8070:Propynylidyne
8068:
8066:
8063:
8061:
8060:Methyl cation
8058:
8056:
8053:
8051:
8048:
8046:
8043:
8041:
8038:
8036:
8033:
8031:
8028:
8026:
8023:
8021:
8020:Fulminic acid
8018:
8016:
8013:
8011:
8008:
8006:
8003:
8001:
7998:
7996:
7993:
7992:
7990:
7988:
7982:
7976:
7973:
7971:
7968:
7966:
7963:
7961:
7958:
7956:
7953:
7951:
7948:
7946:
7943:
7941:
7938:
7936:
7933:
7931:
7928:
7926:
7923:
7921:
7918:
7916:
7913:
7911:
7908:
7906:
7903:
7901:
7898:
7896:
7895:Nitrous oxide
7893:
7891:
7884:
7882:
7879:
7877:
7874:
7872:
7869:
7867:
7864:
7862:
7859:
7857:
7854:
7852:
7849:
7846:
7843:
7840:
7837:
7835:
7832:
7830:
7827:
7825:
7822:
7820:
7817:
7815:
7812:
7810:
7807:
7805:
7802:
7800:
7797:
7795:
7792:
7790:
7789:Amino radical
7787:
7785:
7782:
7780:
7777:
7776:
7774:
7772:
7768:
7763:
7754:
7745:
7735:
7732:
7730:
7727:
7725:
7722:
7720:
7719:Sodium iodide
7717:
7715:
7712:
7710:
7707:
7705:
7702:
7700:
7697:
7695:
7692:
7690:
7687:
7685:
7682:
7679:
7676:
7674:
7671:
7669:
7666:
7663:
7660:
7658:
7655:
7653:
7650:
7648:
7645:
7643:
7640:
7638:
7635:
7632:
7629:
7627:
7624:
7622:
7619:
7617:
7614:
7612:
7609:
7607:
7604:
7602:
7601:Cyano radical
7599:
7597:
7594:
7592:
7589:
7587:
7584:
7582:
7581:Carbon cation
7579:
7577:
7574:
7572:
7569:
7567:
7564:
7562:
7559:
7558:
7556:
7554:
7550:
7547:
7545:
7541:
7537:
7530:
7525:
7523:
7518:
7516:
7511:
7510:
7507:
7491:
7488:
7485:
7482:
7479:
7476:
7473:
7470:
7468:
7465:
7463:
7457:
7455:
7449:
7447:
7444:
7442:
7439:
7436:
7433:
7432:
7393:
7390:
7387:
7368:
7362:
7336:
7330:
7327:
7321:
7303:
7297:
7278:
7272:
7269:
7243:
7237:
7234:
7188:
7185:
7158:
7152:
7142:
7114:
7108:
7079:
7073:
7070:
7069:
7062:
7058:
7055:
7052:
7049:
7046:
7043:
7040:
7037:
7034:
7031:
7028:
7025:
7022:
7019:
7016:
7013:
7010:
7007:
7004:
7003:
6999:
6996:
6993:
6990:
6987:
6984:
6981:
6978:
6976:
6973:
6971:
6968:
6966:
6963:
6945:
6942:
6932:
6926:
6924:
6902:
6876:
6873:
6871:
6861:
6858:
6836:
6829:
6827:
6824:
6823:
6819:
6817:
6811:
6797:
6794:
6791:
6788:
6785:
6782:
6759:
6756:
6726:
6723:
6701:
6698:
6695:
6680:
6674:
6672:
6658:
6639:
6616:
6613:
6583:
6580:
6578:
6576:
6570:
6568:
6565:
6564:
6560:
6558:
6552:
6545:
6543:
6539:
6535:
6529:
6527:
6523:
6520:
6517:
6514:
6460:
6458:
6454:
6451:
6444:
6436:
6429:
6426:
6424:
6416:
6408:
6395:
6391:
6385:
6375:
6352:
6345:
6342:
6328:
6321:
6291:
6284:
6282:
6275:
6272:
6246:
6243:
6241:
6239:
6232:
6229:
6227:
6224:
6223:
6219:
6217:
6211:
6209:
6205:
6199:
6197:
6193:
6189:
6183:
6181:
6178:
6175:
6173:
6166:
6164:
6161:
6160:
6156:
6154:
6148:
6146:
6140:
6138:
6134:
6130:
6120:
6118:
6114:
6111:
6109:
6105:
6098:
6092:
6090:
6083:
6081:
6078:
6077:
6073:
6067:
6065:
6061:
6055:
6054:
6048:
6043:
6035:
6030:
6028:
6023:
6021:
6016:
6015:
6012:
6000:
5993:
5991:
5980:
5978:
5967:
5965:
5955:
5953:
5943:
5941:
5935:
5933:
5927:
5925:
5919:
5917:
5911:
5909:
5903:
5901:
5895:
5893:
5887:
5885:
5882:
5880:
5874:
5873:
5871:
5867:
5861:
5851:
5849:
5839:
5838:
5836:
5832:
5826:
5823:
5821:
5818:
5817:
5815:
5811:
5807:
5800:
5795:
5793:
5788:
5786:
5781:
5780:
5777:
5769:
5764:
5760:
5759:IEEE Spectrum
5756:
5751:
5747:
5743:
5739:
5736:. Mindat.org.
5735:
5731:
5727:
5722:
5721:
5717:
5701:
5697:
5690:
5687:
5682:
5676:
5672:
5671:
5663:
5660:
5649:
5643:
5640:
5635:
5631:
5627:
5623:
5619:
5615:
5610:
5605:
5602:(2): 023035.
5601:
5597:
5589:
5586:
5580:
5575:
5571:
5567:
5563:
5559:
5555:
5548:
5545:
5540:
5536:
5532:
5528:
5524:
5520:
5516:
5512:
5507:
5502:
5498:
5494:
5487:
5484:
5479:
5475:
5471:
5467:
5463:
5459:
5455:
5451:
5447:
5443:
5439:
5432:
5429:
5424:
5420:
5416:
5412:
5408:
5404:
5400:
5396:
5388:
5385:
5380:
5376:
5372:
5368:
5364:
5360:
5356:
5352:
5347:
5342:
5338:
5334:
5327:
5324:
5319:
5315:
5311:
5307:
5302:
5297:
5293:
5289:
5285:
5281:
5277:
5273:
5265:
5262:
5257:
5253:
5249:
5245:
5241:
5237:
5233:
5229:
5225:
5221:
5214:
5207:
5204:
5193:
5189:
5188:"Printmaking"
5183:
5180:
5175:
5171:
5167:
5163:
5159:
5155:
5148:
5145:
5140:
5134:
5130:
5129:
5121:
5118:
5107:on 2012-02-04
5106:
5102:
5096:
5093:
5088:
5082:
5078:
5077:
5069:
5066:
5062:
5058:
5055:
5049:
5046:
5034:
5030:
5026:
5019:
5016:
5005:on 2012-04-25
5004:
5000:
4996:
4989:
4986:
4981:
4977:
4973:
4966:
4963:
4958:
4954:
4950:
4946:
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4931:
4928:
4915:
4911:
4905:
4902:
4896:
4891:
4887:
4883:
4879:
4875:
4871:
4864:
4861:
4849:
4845:
4839:
4836:
4825:on 2022-11-11
4824:
4820:
4814:
4811:
4806:
4800:
4796:
4795:
4787:
4784:
4779:
4775:
4770:
4765:
4761:
4757:
4753:
4749:
4745:
4741:
4734:
4727:
4724:
4713:on 2012-03-15
4712:
4708:
4702:
4699:
4694:
4690:
4686:
4682:
4678:
4674:
4670:
4666:
4658:
4655:
4642:
4636:
4633:
4628:
4622:
4618:
4617:
4609:
4607:
4603:
4591:
4584:
4581:
4569:
4565:
4558:
4555:
4551:
4549:
4540:September 20,
4532:
4525:
4518:
4515:
4510:
4506:
4499:
4492:
4489:
4484:
4478:
4474:
4473:
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4445:
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4423:
4417:
4414:
4409:
4405:
4401:
4397:
4393:
4389:
4385:
4381:
4374:
4371:
4366:
4362:
4358:
4354:
4350:
4346:
4342:
4338:
4334:
4330:
4323:
4320:
4315:
4311:
4307:
4303:
4295:
4292:
4287:
4281:
4277:
4276:
4268:
4265:
4260:
4254:
4250:
4249:
4241:
4238:
4233:
4227:
4223:
4222:
4214:
4211:
4206:
4200:
4196:
4195:
4187:
4184:
4179:
4175:
4171:
4167:
4160:
4157:
4152:
4148:
4142:
4139:
4134:
4130:
4126:
4122:
4118:
4114:
4110:
4106:
4099:
4096:
4085:on 2009-03-26
4084:
4080:
4079:topmost10.com
4076:
4070:
4067:
4062:
4058:
4052:
4049:
4038:on 2012-01-26
4037:
4033:
4027:
4024:
4019:
4015:
4011:
4007:
4003:
3999:
3994:
3989:
3985:
3981:
3974:
3971:
3960:on 2012-02-17
3959:
3955:
3949:
3946:
3935:on 2009-04-06
3934:
3930:
3926:
3920:
3917:
3912:
3908:
3902:
3899:
3894:
3890:
3886:
3880:
3876:
3872:
3871:
3863:
3860:
3855:
3848:
3845:
3840:
3836:
3831:
3826:
3822:
3818:
3814:
3810:
3807:(4): 044201.
3806:
3802:
3798:
3791:
3788:
3783:
3779:
3774:
3769:
3765:
3761:
3757:
3753:
3748:
3743:
3740:(4): 044205.
3739:
3735:
3731:
3724:
3721:
3716:
3712:
3708:
3704:
3700:
3696:
3689:
3687:
3683:
3670:
3666:
3660:
3657:
3652:
3648:
3644:
3640:
3636:
3632:
3628:
3624:
3617:
3615:
3613:
3609:
3604:
3600:
3595:
3590:
3587:(1): 014601.
3586:
3582:
3578:
3571:
3568:
3564:
3559:
3556:
3551:
3547:
3542:
3537:
3533:
3529:
3525:
3521:
3518:(4): 044204.
3517:
3513:
3509:
3502:
3500:
3496:
3491:
3487:
3483:
3479:
3475:
3471:
3464:
3461:
3457:
3454:Published in
3453:
3448:
3445:
3440:
3434:
3430:
3429:
3421:
3418:
3413:
3407:
3404:
3399:
3395:
3391:
3387:
3380:
3377:
3372:
3368:
3364:
3360:
3356:
3352:
3348:
3344:
3337:
3334:
3329:
3325:
3321:
3317:
3313:
3309:
3305:
3301:
3294:
3291:
3286:
3280:
3276:
3275:
3267:
3265:
3261:
3257:
3253:
3250:
3245:
3242:
3238:
3235:Published in
3234:
3229:
3226:
3221:
3215:
3211:
3204:
3201:
3196:
3190:
3186:
3185:
3177:
3174:
3166:
3159:
3158:
3150:
3147:
3143:
3138:
3135:
3130:
3126:
3119:
3116:
3111:
3105:
3101:
3100:
3092:
3090:
3088:
3084:
3079:
3075:
3071:
3067:
3060:
3057:
3052:
3048:
3044:
3040:
3036:
3032:
3025:
3022:
3011:on 2012-04-30
3010:
3006:
2999:
2996:
2992:
2988:
2981:
2978:
2967:
2963:
2959:
2955:
2951:
2944:
2941:
2929:
2925:
2924:
2919:
2913:
2910:
2905:
2898:
2895:
2892:
2886:
2883:
2878:
2872:
2868:
2867:
2859:
2856:
2844:
2840:
2836:
2829:
2826:
2821:
2817:
2813:
2809:
2805:
2801:
2797:
2793:
2786:
2783:
2778:
2774:
2773:
2768:
2761:
2758:
2746:
2742:
2736:
2733:
2721:
2715:
2713:
2711:
2707:
2702:
2700:1-4398-5511-0
2696:
2692:
2688:
2687:
2679:
2676:
2665:
2661:
2654:
2651:
2646:
2644:1-4398-5511-0
2640:
2636:
2632:
2631:
2623:
2621:
2617:
2612:
2608:
2601:
2599:
2597:
2595:
2591:
2584:
2580:
2577:
2575:
2572:
2570:
2567:
2566:
2562:
2560:
2558:
2554:
2550:
2546:
2538:
2536:
2529:
2527:
2517:
2512:
2510:
2506:
2505:color centers
2498:
2496:
2492:
2489:
2486:
2480:
2476:
2474:
2466:
2464:
2462:
2456:
2454:
2449:
2446:
2442:
2434:
2432:
2430:
2426:
2422:
2418:
2409:
2407:
2405:
2401:
2397:
2393:
2389:
2385:
2376:
2369:
2367:
2365:
2364:birefringence
2361:
2357:
2353:
2349:
2345:
2341:
2337:
2333:
2329:
2325:
2317:
2312:
2305:
2303:
2301:
2297:
2293:
2288:
2286:
2282:
2278:
2274:
2266:
2264:
2262:
2258:
2254:
2253:nuclear waste
2250:
2246:
2238:
2236:
2229:
2227:
2225:
2221:
2217:
2213:
2205:
2203:
2198:
2189:
2182:
2180:
2178:
2175:
2171:
2167:
2163:
2160:material for
2159:
2151:
2149:
2147:
2143:
2139:
2134:
2132:
2128:
2124:
2116:
2111:
2106:
2102:
2100:
2095:
2091:
2087:
2086:Tesla Model 3
2079:
2075:
2071:
2068:
2067:
2066:
2064:
2060:
2059:power modules
2057:
2054:circuits and
2053:
2048:
2046:
2042:
2038:
2033:
2028:
2026:
2022:
2016:
2014:
2010:
2006:
2002:
1998:
1994:
1990:
1989:semiconductor
1982:
1980:
1978:
1974:
1973:crystal radio
1966:
1964:
1962:
1958:
1954:
1950:
1945:
1941:
1937:
1932:
1928:
1924:
1919:
1909:
1905:
1901:
1897:
1889:
1887:
1881:
1879:
1877:
1873:
1869:
1865:
1861:
1857:
1853:
1849:
1845:
1841:
1837:
1833:
1824:
1817:
1815:
1813:
1808:
1804:
1794:
1789:
1785:
1781:
1777:
1776:Chobham armor
1773:
1769:
1768:boron carbide
1764:
1762:
1758:
1755:
1752:
1748:
1747:United States
1744:
1740:
1733:
1728:
1721:
1719:
1716:
1712:
1707:
1705:
1701:
1697:
1693:
1689:
1685:
1681:
1677:
1673:
1664:
1657:
1652:
1650:
1648:
1644:
1639:
1635:
1633:
1629:
1625:
1621:
1617:
1613:
1609:
1608:semiconductor
1601:
1599:
1597:
1593:
1589:
1585:
1581:
1572:
1567:
1565:
1561:
1557:
1553:
1543:
1540:
1536:
1532:
1529:
1524:
1523:
1519:
1516:
1513:
1508:
1505:
1504:
1500:
1497:
1494:
1491:
1488:
1487:
1483:
1480:
1477:
1474:
1471:
1470:
1466:
1463:
1460:
1457:
1456:
1452:
1449:
1446:
1443:
1442:
1438:
1435:
1432:
1430:
1427:
1426:
1414:
1403:
1392:
1390:
1387:
1386:
1382:
1379:
1376:
1373:
1372:
1368:
1365:
1362:
1359:
1358:
1352:
1350:
1346:
1342:
1338:
1334:
1331:
1327:
1322:
1320:
1311:
1302:
1299:
1296:
1295:
1289:
1285:
1280:
1276:
1271:
1267:
1266:
1259:
1251:
1249:
1246:
1244:
1240:
1236:
1233:are known as
1232:
1228:
1224:
1220:
1215:
1213:
1208:
1206:
1202:
1197:
1194:
1182:
1173:
1169:
1167:
1164:
1161:
1156:
1154:
1146:
1142:
1138:
1135:
1131:
1127:
1126:semiconductor
1118:
1110:
1103:
1101:
1099:
1095:
1091:
1086:
1084:
1080:
1076:
1072:
1070:
1066:
1062:
1058:
1050:
1045:
1038:
1033:
1029:
1026:
1023:
1020:
1016:
1013:
1010:
1009:
1008:
1002:
997:
995:
993:
989:
985:
981:
978:found around
977:
972:
970:
966:
962:
958:
953:
951:
947:
943:
939:
935:
926:
919:
917:
915:
911:
906:
904:
900:
896:
892:
888:
884:
880:
876:
875:semiconductor
872:
868:
862:
820:
816:
812:
800:
793:
788:
771:
765:
761:
757:
753:
752:
748:
745:(Recommended)
744:
740:
739:
735:
732:(Permissible)
731:
727:
726:
722:
721:
716:
709:
702:
695:
671:
668:
667:
663:
662:
572:
569:
565:
564:
558:
555:
551:
550:
547:
544:
541:
537:
536:
532:
528:
525:
521:
520:
516:
514:
509:
504:
500:
493:
489:
485:
484:
480:
476:
472:
471:
467:
465:
462:
461:
457:
455:
452:
451:
447:
445:
444:Melting point
442:
441:
437:
435:
432:
431:
427:
424:
423:
419:
417:
414:
413:
409:
406:
402:
401:
396:
387:
383:
376:
365:
358:
348:
344:
337:
329:
325:
324:DTXSID5052751
321:
320:
318:
308:
304:
303:
296:
292:
291:
289:
287:
284:
283:
276:
275:
273:
271:
268:
267:
260:
256:
255:
253:
247:
243:
242:
238:
234:
232:
229:
228:
224:
221:
217:
216:
209:
208:
206:
204:
199:
198:
194:
190:
187:
185:
183:ECHA InfoCard
180:
179:
172:
168:
167:
165:
163:
160:
159:
152:
148:
147:
145:
143:
140:
139:
132:
128:
127:
125:
121:
116:
115:
108:
104:
103:
101:
98:
94:
93:
88:
84:
76:
68:
64:
59:
55:
48:
43:
37:
33:
19:
9267:Bicarbonates
9167:
8952:
8935:Spectroscopy
8789:Astrobiology
8642:Formaldehyde
8534:Benzonitrile
8325:Acetaldehyde
8280:Methanethiol
8231:Acetonitrile
8136:Carbodiimide
8015:Formaldehyde
8010:Cyanoethynyl
7861:Iron cyanide
7856:Hydroperoxyl
7698:
7657:Nitric oxide
6337:, CrSi, CrSi
6112:
5883:
5758:
5745:
5734:"Moissanite"
5724:Kelly, J.F.
5703:. Retrieved
5700:Digital Fire
5699:
5689:
5669:
5662:
5651:. Retrieved
5642:
5599:
5595:
5588:
5561:
5557:
5547:
5496:
5492:
5486:
5445:
5441:
5431:
5398:
5394:
5387:
5336:
5332:
5326:
5275:
5271:
5264:
5223:
5220:MRS Bulletin
5219:
5206:
5195:. Retrieved
5191:
5182:
5160:(1): 29–34.
5157:
5153:
5147:
5127:
5120:
5109:. Retrieved
5105:the original
5095:
5075:
5068:
5048:
5037:. Retrieved
5033:the original
5028:
5018:
5007:. Retrieved
5003:the original
4998:
4988:
4971:
4965:
4940:
4936:
4930:
4918:. Retrieved
4913:
4904:
4877:
4873:
4863:
4851:. Retrieved
4847:
4838:
4827:. Retrieved
4823:the original
4813:
4793:
4786:
4746:(4): 483–8.
4743:
4739:
4726:
4715:. Retrieved
4711:the original
4701:
4668:
4664:
4657:
4645:. Retrieved
4635:
4615:
4593:. Retrieved
4583:
4571:. Retrieved
4567:
4557:
4545:
4538:. Retrieved
4517:
4508:
4504:
4491:
4471:
4464:
4454:11 September
4452:. Retrieved
4448:the original
4438:
4430:the original
4425:
4416:
4383:
4379:
4373:
4332:
4328:
4322:
4305:
4301:
4294:
4274:
4267:
4247:
4240:
4220:
4213:
4193:
4186:
4169:
4165:
4159:
4150:
4141:
4108:
4104:
4098:
4087:. Retrieved
4083:the original
4078:
4069:
4060:
4051:
4040:. Retrieved
4036:the original
4026:
3983:
3979:
3973:
3962:. Retrieved
3958:the original
3948:
3937:. Retrieved
3933:the original
3928:
3919:
3910:
3901:
3869:
3862:
3847:
3804:
3800:
3790:
3737:
3733:
3723:
3698:
3694:
3673:. Retrieved
3668:
3659:
3629:(1): 11860.
3626:
3622:
3584:
3580:
3570:
3558:
3515:
3511:
3473:
3469:
3463:
3455:
3447:
3427:
3420:
3406:
3389:
3385:
3379:
3346:
3342:
3336:
3303:
3299:
3293:
3273:
3244:
3236:
3228:
3209:
3203:
3183:
3176:
3165:the original
3156:
3149:
3137:
3128:
3124:
3118:
3098:
3069:
3065:
3059:
3034:
3030:
3024:
3013:. Retrieved
3009:the original
2998:
2990:
2980:
2969:. Retrieved
2957:
2953:
2943:
2932:. Retrieved
2928:the original
2921:
2912:
2897:
2885:
2865:
2858:
2847:. Retrieved
2838:
2833:Kelly, Jim.
2828:
2795:
2791:
2785:
2776:
2770:
2760:
2748:. Retrieved
2744:
2735:
2724:. Retrieved
2684:
2678:
2667:. Retrieved
2663:
2653:
2628:
2542:
2533:
2513:
2502:
2493:
2484:
2481:
2477:
2470:
2457:
2438:
2423:, such as n-
2421:hydrocarbons
2413:
2400:ferrosilicon
2390:, acts as a
2381:
2348:birefringent
2321:
2298:cladding in
2289:
2283:such as the
2277:nuclear fuel
2270:
2242:
2233:
2224:pilot lights
2209:
2200:
2162:astronomical
2155:
2135:
2120:
2083:
2049:
2029:
2017:
1986:
1970:
1953:Westinghouse
1920:
1893:
1885:
1829:
1809:
1805:
1765:
1736:
1708:
1692:sandblasting
1669:
1636:
1605:
1568:
1549:
1538:
1537:); 2.49 (∥
1534:
1490:Bulk modulus
1343:(similar to
1335:(similar to
1323:
1316:
1247:
1216:
1209:
1203:in graphite
1198:
1181:Lely process
1178:
1157:
1123:
1098:Soviet Union
1087:
1073:
1064:
1054:
1006:
973:
954:
931:
907:
818:
814:
810:
809:
719:
665:
545:
512:
491:
270:RTECS number
90:Identifiers
80:Carborundum
78:Other names
36:
9308:Deoxidizers
9200:Thiocyanate
9177:Carbon ions
8909:Outer space
8819:Cosmic dust
8784:Abiogenesis
8696:Unconfirmed
8652:Heavy water
8492:Ethanethiol
8407:Cyanoallene
8397:Acetic acid
8367:Methylamine
8251:Diacetylene
8166:Formic acid
8156:Cyanomethyl
7814:Diazenylium
7804:CCP radical
7680:(molecular)
7664:(molecular)
7633:(molecular)
6457:more…
4511:(2): 75–78.
3929:unipass.com
3476:(3): 1363.
3258:Preceramics
2750:12 December
2553:copper reds
2448:printmaking
2220:float glass
2218:of metals,
1927:power lines
1864:Lamborghini
1836:brake disks
1780:Dragon Skin
1704:skateboards
1389:Space group
1166:heat source
1153:silica fume
1100:, in 1923.
1065:carborundum
912:(LEDs) and
903:Lely method
819:carborundum
540:Signal word
425:Appearance
398:Properties
189:100.006.357
151:CHEBI:29390
54:monocrystal
9287:Categories
9272:Carbonates
9231:Fullerides
8824:Cosmic ray
8766:Silylidyne
8729:Hemolithin
8704:Anthracene
8621:Deuterated
8602:Pyrimidine
8412:Ethanimine
8275:Ketenimine
8131:Butadiynyl
7955:Thioformyl
7809:Chloronium
7353:, HoSi, Ho
7260:, SmSi, Sm
6531:SiAs, SiAs
5770:. YouTube.
5653:2020-06-27
5609:1708.04508
5506:1503.07566
5197:2009-07-31
5111:2009-06-06
5039:2011-10-13
5009:2011-10-13
4829:2022-11-10
4717:2009-06-06
4665:Proc. SPIE
4089:2009-06-06
4042:2012-02-09
3964:2009-06-06
3939:2009-06-06
3131:: 229–236.
3015:2005-06-21
2971:2007-10-28
2934:2009-06-06
2849:2009-06-06
2726:2009-06-06
2669:2018-11-27
2585:References
2445:collagraph
2352:optic axis
2336:Mohs scale
2316:moissanite
2013:thyristors
1961:zinc oxide
1906:until the
1904:resistance
1852:McLaren P1
1754:superalloy
1700:sandpapers
1616:phosphorus
1383:Hexagonal
1380:Hexagonal
1303:(α)6H-SiC
1297:(β)3C-SiC
1104:Production
1094:O.V. Losev
1049:H.J. Round
969:saw blades
946:kimberlite
934:moissanite
879:moissanite
524:Pictograms
454:Solubility
416:Molar mass
410:SiC
295:WXQ6E537EW
162:ChemSpider
118:3D model (
97:CAS Number
83:Moissanite
9318:Gemstones
9293:Abrasives
9205:Fulminate
9049:Compounds
8756:Phosphine
8624:molecules
8557:fullerene
8457:Acetamide
8261:Formamide
8141:Cyanamide
7995:Acetylene
7970:Tricarbon
7881:Methylene
7866:Isoformyl
7771:Triatomic
7544:Molecules
5539:205338373
5423:0008-6223
5371:0038-1098
5346:0704.0285
5310:1476-1122
5248:0883-7694
4769:1903/3602
4693:120854083
4133:136537033
3993:1303.2761
3986:: 83–91.
3747:0810.0056
3651:267488637
3603:139945430
3371:135586321
3051:135784055
2820:128600868
2779:: 773–86.
2691:CRC Press
2658:Pubchem.
2635:CRC Press
2461:Levigator
2279:found in
2152:Astronomy
2131:blue LEDs
2099:Wolfspeed
2090:inverters
2078:sintering
2025:nitriding
1963:pellets.
1957:varistors
1940:spark gap
1936:in series
1874:form for
1812:magnesium
1761:toughness
1628:aluminium
1620:beryllium
1360:Polytype
1330:hexagonal
1326:polymorph
1223:pyrolysis
1205:crucibles
1191:C) in an
950:synthetic
938:meteorite
914:detectors
887:sintering
650:P403+P233
642:P337+P313
638:P332+P313
622:P308+P313
614:P304+P340
610:P302+P352
515:labelling
277:VW0450000
210:206-991-8
202:EC Number
9298:Carbides
9252:Nitrides
9184:Carbides
8743:Linear C
8724:Graphene
8636:Ammonium
8437:Acrolein
8300:Propynal
8285:Methanol
8256:Ethylene
8125:Ammonium
7900:Nitroxyl
7724:Sulfanyl
7668:Imidogen
7662:Nitrogen
7631:Hydrogen
7576:Argonium
7553:Diatomic
7304:SiTb, Si
6950:Si, ReSi
6185:SiP, SiP
6042:silicide
5705:30 April
5531:26205309
5499:: 7783.
5478:37160386
5470:24240243
5379:44542277
5318:19202545
5256:40188237
5174:95550450
5057:Archived
4920:June 10,
4853:June 10,
4778:17230239
4531:Archived
4408:95074081
4357:15329702
4018:94096447
3893:58542120
3839:27878018
3782:27878022
3675:21 March
3550:27878021
3328:97161599
3252:Archived
2843:Archived
2613:(NIOSH).
2563:See also
2483:perform
2473:graphene
2326:used in
2324:gemstone
2296:Zircaloy
1872:sintered
1745:and the
1715:whiskers
1680:grinding
1672:lapidary
1612:nitrogen
1571:bearings
1533:2.28 (⊥
1337:Wurtzite
1163:resistor
1160:graphite
1069:corundum
1032:ethylene
1019:crucible
976:stardust
942:corundum
891:ceramics
883:abrasive
666:NFPA 704
517::fibres
506:Hazards
477:(χ)
107:409-21-2
32:Corundum
9195:Cyanate
9190:Cyanide
8889:Kerogen
8776:Related
8719:Glycine
8672:Propyne
8631:Ammonia
8529:Benzene
8524:Acetone
8516:or more
8487:Propene
8472:Ethanol
8362:Propyne
8181:Methane
8050:Ketenyl
8000:Ammonia
7385:, ErSi
7295:, GdSi
7183:, PrSi
7106:, LaSi
7066:
5834:Si(III)
5634:4867492
5614:Bibcode
5566:Bibcode
5511:Bibcode
5450:Bibcode
5403:Bibcode
5351:Bibcode
5280:Bibcode
5228:Bibcode
4945:Bibcode
4882:Bibcode
4748:Bibcode
4673:Bibcode
4671:: 263.
4573:May 17,
4550:MOSFETs
4426:Reuters
4388:Bibcode
4365:4328365
4337:Bibcode
4308:: 169.
4113:Bibcode
3998:Bibcode
3830:5099632
3809:Bibcode
3773:5099636
3752:Bibcode
3703:Bibcode
3631:Bibcode
3541:5099635
3520:Bibcode
3478:Bibcode
3351:Bibcode
3308:Bibcode
2800:Bibcode
2607:"#0555"
2485:ex situ
2332:diamond
2328:jewelry
2306:Jewelry
2261:Martian
2251:and as
2245:neutron
2005:MOSFETs
1944:ionized
1938:with a
1908:voltage
1860:Ferrari
1856:Bentley
1757:turbine
1643:type-II
1632:gallium
1588:current
1509:(W⋅m⋅K)
1473:Bandgap
1447:4.3596
1369:6H (α)
1363:3C (β)
1345:diamond
1300:4H-SiC
1096:in the
1079:furnace
1034:(1882).
998:History
961:Arizona
867:silicon
792:what is
790: (
434:Density
246:PubChem
9247:Oxides
9041:carbon
8940:Tholin
8761:Pyrene
8206:Silane
8176:Ketene
7678:Oxygen
7398:Yb, Si
7229:, NdSi
6916:Si, Ta
6897:, HfSi
6881:Si, Hf
6776:Si, Pd
6764:Si, Pd
6731:Si, Rh
6706:Si, Ru
6652:Si, Zr
6505:Si, Cu
6493:Si, Cu
6481:Si, Cu
5869:Si(IV)
5813:Si(II)
5677:
5632:
5564:: 15.
5537:
5529:
5476:
5468:
5421:
5395:Carbon
5377:
5369:
5316:
5308:
5254:
5246:
5172:
5135:
5083:
4801:
4776:
4691:
4647:6 June
4623:
4595:6 June
4479:
4406:
4363:
4355:
4329:Nature
4282:
4255:
4228:
4201:
4131:
4016:
3891:
3881:
3837:
3827:
3780:
3770:
3649:
3601:
3548:
3538:
3435:
3369:
3326:
3281:
3216:
3191:
3106:
3049:
2891:eb.com
2873:
2818:
2697:
2641:
2574:Globar
2549:silica
2545:glazes
2425:butane
2356:luster
2158:mirror
2094:MOSFET
2041:TO-220
1850:, the
1846:, the
1842:, the
1774:(e.g.
1751:nickel
1739:Europe
1684:honing
1647:type-I
1492:(GPa)
1143:in an
1141:carbon
1134:silica
1021:(1881)
871:carbon
787:verify
784:
546:Danger
382:SMILES
225:13642
61:Names
8926:(PAH)
8514:atoms
8449:atoms
8389:atoms
8387:Eight
8317:atoms
8315:Seven
8223:atoms
8117:atoms
7987:atoms
7975:Water
7905:Ozone
7847:(HNC)
7841:(HCN)
7328:DySi
6686:Si Mo
6664:Si Nb
6608:, YSi
6550:SiSe
6308:, VSi
5630:S2CID
5604:arXiv
5535:S2CID
5501:arXiv
5474:S2CID
5375:S2CID
5341:arXiv
5252:S2CID
5216:(PDF)
5170:S2CID
4736:(PDF)
4689:S2CID
4534:(PDF)
4527:(PDF)
4501:(PDF)
4404:S2CID
4361:S2CID
4151:Cerma
4129:S2CID
4014:S2CID
3988:arXiv
3742:arXiv
3669:ADEPT
3647:S2CID
3599:S2CID
3367:S2CID
3324:S2CID
3168:(PDF)
3161:(PDF)
3047:S2CID
2816:S2CID
2427:, to
2388:steel
2322:As a
2273:TRISO
2110:InGaN
2074:chips
2032:JFETs
1743:Japan
1630:, or
1624:boron
1558:of a
1544:2.25
1484:3.05
1481:3.23
1478:2.36
1475:(eV)
1467:3.21
1464:3.21
1461:3.21
1439:hP12
1193:argon
762:N.D.
720:NIOSH
560:H350i
343:InChI
142:ChEBI
120:JSmol
9186:, ,
8447:Nine
8115:Five
8025:HCCN
7985:Four
7945:SiNC
7467:PuSi
7459:NpSi
7446:PaSi
7441:ThSi
7422:, Si
7414:, Si
7406:, Si
7392:YbSi
7388:Tm?
7377:, Er
7364:ErSi
7345:, Ho
7332:HoSi
7323:DySi
7312:, Si
7299:TbSi
7287:, Gd
7274:GdSi
7270:Eu?
7252:, Sm
7239:SmSi
7221:, Nd
7213:, Nd
7205:, Nd
7197:, Nd
7187:NdSi
7175:, Pr
7167:, Pr
7154:PrSi
7143:, Ce
7141:CeSi
7131:, Ce
7123:, Ce
7110:CeSi
7096:, La
7088:, La
7075:LaSi
6975:PtSi
6970:IrSi
6965:OsSi
6944:ReSi
6912:, Ta
6889:, Hf
6875:HfSi
6841:, Ba
6837:BaSi
6826:CsSi
6798:TeSi
6772:, Pd
6758:PdSi
6747:, Rh
6739:, Rh
6725:RhSi
6714:, Ru
6700:RuSi
6676:MoSi
6648:, Zr
6640:, Zr
6635:ZrSi
6625:, Zr
6615:ZrSi
6572:SrSi
6567:RbSi
6554:SiBr
6546:SiSe
6522:GeSi
6501:, Cu
6489:, Cu
6477:, Cu
6469:, Cu
6453:NiSi
6445:, Co
6432:CoSi
6428:CoSi
6394:FeSi
6387:FeSi
6376:, Mn
6365:Si,
6361:, Mn
6353:, Mn
6348:MnSi
6344:MnSi
6278:TiSi
6274:TiSi
6245:ScSi
6235:CaSi
6231:CaSi
6213:SiCl
6163:NaSi
6080:LiSi
5957:Si(N
5921:SiAu
5889:SiCl
5876:SiBr
5707:2023
5675:ISBN
5527:PMID
5466:PMID
5419:ISSN
5367:ISSN
5314:PMID
5306:ISSN
5244:ISSN
5133:ISBN
5081:ISBN
5076:Gems
4922:2024
4914:NASA
4855:2024
4799:ISBN
4774:PMID
4669:2199
4649:2009
4621:ISBN
4597:2009
4575:2022
4542:2018
4477:ISBN
4456:2015
4353:PMID
4280:ISBN
4253:ISBN
4226:ISBN
4199:ISBN
4166:Wear
4061:UCLA
3889:OCLC
3879:ISBN
3835:PMID
3778:PMID
3677:2023
3546:PMID
3433:ISBN
3279:ISBN
3214:ISBN
3189:ISBN
3104:ISBN
2958:XXII
2871:ISBN
2752:2021
2695:ISBN
2639:ISBN
2443:– a
2392:fuel
2174:Gaia
2127:LEDs
2117:LEDs
2088:the
2056:IGBT
2011:and
2003:and
1951:and
1868:Audi
1690:and
1653:Uses
1552:iron
1520:325
1517:348
1514:320
1501:220
1498:220
1495:250
1436:hP8
1433:cF8
1139:and
1137:sand
1128:and
1061:coke
990:, a
869:and
756:IDLH
658:P501
654:P405
646:P362
634:P321
630:P314
626:P312
606:P281
602:P280
598:P271
594:P270
590:P264
586:P261
582:P260
578:P202
574:P201
286:UNII
259:9863
231:MeSH
171:9479
9168:SiC
9136:CSe
9106:COS
8738:NCO
8638:ion
8545:, C
8512:Ten
8221:Six
8127:ion
7492:No
7489:Md
7486:Fm
7483:Es
7480:Cf
7477:Bk
7474:Cm
7471:Am
7451:USi
7437:Ac
7434:**
7396:1.8
7235:Pm
7059:Og
7056:Ts
7053:Lv
7050:Mc
7047:Fl
7044:Nh
7041:Cn
7038:Rg
7035:Ds
7032:Mt
7029:Hs
7026:Bh
7023:Sg
7020:Db
7017:Rf
7014:Lr
7011:**
7008:Ra
7005:Fr
7000:Rn
6997:At
6994:Po
6991:Bi
6988:Pb
6985:Tl
6982:Hg
6979:Au
6952:1.8
6928:WSi
6820:Xe
6813:SiI
6795:Sb
6792:Sn
6789:In
6786:Cd
6783:Ag
6780:Si
6696:Tc
6656:Si
6610:1.4
6600:, Y
6592:, Y
6582:YSi
6561:Kr
6542:+As
6538:-As
6526:+Ge
6518:Ga
6515:Zn
6449:Si
6312:, V
6300:, V
6226:KSi
6220:Ar
6201:SiS
6176:Al
6157:Ne
6150:SiF
6142:SiO
6113:SiC
6101:SiB
6094:SiB
6074:He
6057:SiH
6044:ion
5995:SiF
5937:SiS
5929:SiO
5913:SiI
5905:SiH
5897:SiF
5884:SiC
5825:SiS
5820:SiO
5622:doi
5574:doi
5519:doi
5458:doi
5411:doi
5359:doi
5337:143
5296:hdl
5288:doi
5236:doi
5162:doi
4976:doi
4953:doi
4941:392
4890:doi
4764:hdl
4756:doi
4681:doi
4548:SiC
4396:doi
4345:doi
4333:430
4310:doi
4306:911
4174:doi
4170:115
4121:doi
4006:doi
3984:359
3875:319
3825:PMC
3817:doi
3768:PMC
3760:doi
3711:doi
3639:doi
3627:187
3589:doi
3536:PMC
3528:doi
3486:doi
3394:doi
3359:doi
3316:doi
3074:doi
3039:doi
2962:doi
2808:doi
2777:139
2396:tap
2052:PFC
2037:SBD
1898:in
1803:).
1795:(Si
1614:or
1574:SiO
1562:of
1530:--
1423:mc
1419:-P6
1412:mc
1408:-P6
1401:3m
1366:4H
963:by
959:in
897:in
834:ɑːr
815:SiC
743:REL
730:PEL
513:GHS
312:EPA
249:CID
9289::
9128:CS
9111:CS
9098:CO
9090:CO
9082:CO
9074:CO
9066:CO
9061:CO
9056:CF
8555:70
8547:60
8543:60
8541:(C
8266:HC
7426:Yb
7418:Yb
7410:Yb
7402:Yb
7394:Si
7381:Si
7373:Si
7369:Er
7357:Si
7349:Si
7341:Si
7337:Ho
7316:Tb
7308:Tb
7291:Si
7283:Si
7279:Gd
7264:Si
7256:Si
7248:Si
7244:Sm
7225:Si
7217:Si
7209:Si
7201:Si
7193:Si
7189:Nd
7179:Si
7171:Si
7163:Si
7159:Pr
7147:Si
7139:,
7135:Si
7127:Si
7119:Si
7115:Ce
7102:Si
7092:Si
7084:Si
7080:La
7071:*
6958:Si
6954:Re
6946:Re
6937:Si
6920:Si
6908:Si
6904:Ta
6893:Si
6885:Si
6877:Hf
6867:Si
6863:Lu
6859:*
6853:Si
6849:Ba
6845:Si
6835:Si
6831:Ba
6806:Si
6802:Te
6768:Si
6760:Pd
6753:13
6751:Si
6749:20
6743:Si
6735:Si
6727:Rh
6718:Si
6710:Si
6702:Ru
6690:Si
6682:Mo
6668:Si
6660:Nb
6644:Si
6633:,
6629:Si
6621:Si
6617:Zr
6604:Si
6596:Si
6588:Si
6511:13
6509:Si
6507:87
6497:Si
6495:19
6485:Si
6483:33
6475:11
6473:Si
6471:56
6465:Si
6463:17
6461:Cu
6455:,
6443:Si
6439:Co
6437:,
6430:,
6423:Si
6419:Fe
6415:Si
6411:Fe
6403:Si
6399:Fe
6380:Si
6378:11
6371:Si
6367:Mn
6357:Si
6346:,
6333:Si
6329:Cr
6327:Si
6323:Cr
6316:Si
6304:Si
6296:Si
6290:Si
6267:Si
6263:Sc
6259:Si
6255:Sc
6251:Si
6247:Sc
6208:-S
6196:+P
6192:-P
6180:Si
6172:Si
6168:Mg
6137:+N
6133:-N
6122:Si
6117:+C
6108:+B
6089:Si
6085:Be
6064:+H
5999:Cl
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