386:
315:
31:
177:, or SLC flash memory. SLC memory has the advantage of higher write speeds, lower power consumption and higher cell endurance. However, because SLC memory stores less data per cell than MLC memory, it costs more per megabyte of storage to manufacture. Due to higher transfer speeds and expected longer life, SLC flash technology is used in high-performance
305:
Enterprise MLC (eMLC) is a more expensive variant of MLC that is optimized for commercial use. It claims to last longer and be more reliable than normal MLCs while providing cost savings over traditional SLC drives. Although many SSD manufacturers have produced MLC drives intended for enterprise use,
426:
SanDisk X4 flash memory cards, introduced in 2009, was one of the first products based on NAND memory that stores 4 bits per cell, commonly referred to as quad-level-cell (QLC), using 16 discrete charge levels (states) in each individual transistor. The QLC chips used in these memory cards were
298:
As of 2018, nearly all commercial MLCs are planar-based (i.e. cells are built on silicon surface) and so subject to scaling limitations. To address this potential problem, the industry is already looking at technologies that can guarantee storage density increases beyond today’s limitations. One of
287:
MLC is used to refer to cells that store 2 bits per cell, using 4 charge values or levels. A 2-bit MLC has a single charge level assigned to every possible combination of ones and zeros, as follows: When close to 25% full, the cell represents a binary value of 11; when close to 50%, the cell
216:
Read speeds can also be lower for MLC NAND than SLC due to the need to read the same data at a second threshold voltage to help resolve errors. TLC and QLC devices may need to read the same data up to 4 and 8 times respectively to obtain values that are correctable by ECC.
142:
has four possible states per cell, so it can store two bits of information per cell. This reduces the amount of margin separating the states and results in the possibility of more errors. Multi-level cells that are designed for low error rates are sometimes called
288:
represents a 01; when close to 75%, the cell represents a 00; and when close to 100%, the cell represents a 10. Once again, there is a region of uncertainty (read margin) between values, at which the data stored in the cell cannot be precisely read.
208:
SF-2500 flash controller can correct up to 55 bits per 512-byte sector with an unrecoverable read error rate of less than one sector per 10 bits read. The most commonly used algorithm is Bose–Chaudhuri–Hocquenghem
187:
A single-level cell represents a 1 when almost empty and a 0 when almost full. There is a region of uncertainty (a read margin) between the two possible states at which the data stored in the cell cannot be precisely read.
405:. Prior to its invention, the term "QLC" was synonymous with MLC in referring to cells that can have 4 voltage states, i.e. ones that store 2 bits per cell – what is now unambiguously referred to as DLC.
385:
347:
announced a type of NAND flash that stores 3 bits of information per cell, with 8 total voltage states (values or levels), coining the term "triple-level cell" ("TLC").
639:
408:
Due to the exponentially increasing number of required voltage stages for higher level flash the lifetime of QLC is further reduced to a maximum of 1,000 program/erase cycles.
1142:
355:. Samsung refers to this technology as 3-bit MLC. The negative aspects of MLC are amplified with TLC, but TLC benefits from still higher storage density and lower cost.
70:(metal–oxide–semiconductor field-effect transistor), thus multi-level cells reduce the number of MOSFETs required to store the same amount of data as single-level cells.
196:
The primary benefit of MLC flash memory is its lower cost per unit of storage due to the higher data density, and memory-reading software can compensate for a larger
453:
In 2020, Samsung released a QLC SSD with storage space up to 8 TB for customers. It is the SATA SSD with the largest storage capacity for consumers as of 2020.
127:
Typically, as the "level" count increases, performance (speed and reliability) and consumer cost decrease; however, this correlation can vary between manufacturers.
1184:
768:
1521:
482:
169:
transistors. Traditionally, each cell had two possible states (each with one voltage level), with each state representing either a one or a zero, so one
138:), etc. For example, in SLC NAND flash technology, each cell can exist in one of the two states, storing one bit of information per cell. Most MLC NAND
213:). Other drawbacks of MLC NAND are lower write speeds, lower number of program/erase cycles and higher power consumption compared to SLC flash memory.
314:
956:
791:
1470:
1271:
1244:
1320:
1138:
544:
969:
622:
1048:"Toshiba Makes Major Advances in NAND Flash Memory with 3-bit-per-cell 32nm generation and with 4-bit-per-cell 43nm technology"
154:
New technologies, such as multi-level cells and 3D Flash, and increased production volumes will continue to bring prices down.
1422:
931:
888:
181:. In February 2016, a study was published that showed little difference in practice between the reliability of SLC and MLC.
995:
507:
302:
In the past, a few memory devices went the other direction and used two cells per bit to give even lower bit error rates.
1078:
1516:
299:
the most promising is 3D Flash, where cells are stacked vertically, thereby avoiding the limitations of planar scaling.
265:
1163:
1372:
1194:
220:
MLC flash may have a lifetime of about 1,000 to 10,000 program/erase cycles. This typically necessitates the use of a
1217:
532:
567:
907:
1296:
805:
434:
In 2017, Toshiba introduced V-NAND memory chips with quad-level cells, which have a storage capacity of up to 768
1347:
30:
1511:
669:
840:
184:
A single-level cell (SLC) flash memory may have a lifetime of about 50,000 to 100,000 program/erase cycles.
51:
738:
1446:
757:"Four-state cell called density key" article by J. Robert Lineback. "Electronics" magazine. 1982 June 30.
201:
1397:
1019:
862:
166:
67:
1112:
348:
135:
88:) are versions of MLC memory, which can store three and four bits per cell respectively. The name "
362:(Vertical NAND, also known as 3D NAND) with triple-level cells, which had a memory capacity of 128
797:
776:
Proceedings. 1998 28th IEEE International
Symposium on Multiple- Valued Logic (Cat. No.98CB36138)
720:
702:
647:
595:
292:
273:
1189:
787:
540:
447:
352:
341:
With current technology a maximum lifetime of up to 3,000 program/erase cycles is achievable.
221:
66:), which can store only one bit per memory cell. A memory cell typically consists of a single
419:
memory chips with quad-level cells, storing 4 bits per cell and holding a capacity of 64
1218:"Samsung Starts Production of 512 GB UFS NAND Flash Memory: 64-Layer V-NAND, 860 MB/s Reads"
779:
712:
528:
295:
use part of an MLC NAND die as if it were single-bit SLC NAND, giving higher write speeds.
1107:
829:
1047:
626:
1079:"Difference between SLC, MLC, TLC and 3D NAND in USB flash drives, SSDs and Memory cards"
618:
242:, and in 1980 was one of the first devices on the market to use multi-level ROM cells.
197:
1505:
225:
801:
724:
1491:
261:
162:
139:
932:"New Samsung 840 EVO employs TLC and pseudo-SLC TurboWrite cache - PC Perspective"
483:"Solidigm Demonstrates World's First Penta-Level Cell SSD at Flash Memory Summit"
103:
Multi-level cell or MLC (2 bits per cell), alternatively double-level cell or DLC
17:
462:
178:
39:
739:"Two bits per transistor: high-density ROM in Intel's 8087 floating point chip"
716:
351:
began mass-producing it in 2010, and it was first seen in
Samsung's 840 Series
783:
416:
331:
232:
131:
1222:
693:
Peleato; et al. (Sep 2015). "Adaptive Read
Thresholds for NAND Flash".
281:
247:
236:
205:
1471:"Samsung Electronics Debuts Industry-Leading 8TB Consumer SSD, the 870 QVO"
970:"Hyperstone Blog | Solid State bit density and the Flash Memory Controller"
224:, which is designed around the limitations of flash memory, such as using
428:
210:
1272:"SanDisk Ships World's First Memory Cards With 64 Gigabit X4 NAND Flash"
1245:"SanDisk ships world's first memory cards with 64 gigabit X4 NAND flash"
1117:
1052:
412:
366:
344:
335:
258:
996:"Automotive EEPROMs use two cells per bit for ruggedness, reliability"
1321:"Toshiba Develops World's First 4-bit Per Cell QLC NAND Flash Memory"
359:
112:
Penta-level cell or PLC (5 bits per cell) – currently in development
27:
Memory cell capable of storing more than a single bit of information
1373:"The Intel SSD 660p SSD Review: QLC NAND Arrives For Consumer SSDs"
707:
450:
and
Samsung have launched some SSD products using QLC NAND memory.
393:
Memory that stores 4 bits per cell is commonly referred to as
533:"Flash Reliability in Production: The Expected and the Unexpected"
443:
439:
384:
313:
243:
29:
306:
only Micron sells raw NAND Flash chips under this designation.
264:
chip storing 2 bits per cell. In 1997, NEC demonstrated a
1297:"NAND Flash - The New Era of 4 bit per cell and Beyond"
957:"Samsung Solid State Drive: TurboWrite Technology White Paper"
251:
239:
170:
55:
568:"Hyperstone Blog | NAND Flash is displacing hard disk drives"
204:(ECC) that can correct multiple bit errors; for example, the
92:-level cell" is sometimes used specifically to refer to the "
1398:"The Crucial P1 1TB SSD Review: The Other Consumer QLC SSD"
116:
Notice that this nomenclature can be misleading, since an "
96:-level cell". Overall, the memories are named as follows:
268:(DRAM) chip with quad-level cells, holding a capacity of 4
165:
stores data in individual memory cells, which are made of
1423:"Samsung Starts Mass Production of QLC V-NAND-Based SSDs"
334:
memory that stores 3 bits of information per cell.
106:
Triple-level cell or TLC (3 bits per cell) or 3-Bit MLC
1496:
120:-level cell" in fact uses 2 levels of charge to store
670:"A Tour of the Basics of Embedded NAND Flash Options"
389:
The
Samsung 870 QVO: A QLC SSD with 8 TB storage
276:
also demonstrated quad-level cells in 2000, with a 64
1164:"Samsung SSD 840: Testing the Endurance of TLC NAND"
1348:"ADATA Reveals Ultimate SU630 SSD: 3D QLC for SATA"
1185:"Samsung Mass Producing 128Gb 3-bit MLC NAND Flash"
1020:"Enterprise MLC: Extended MLC Cycling Capabilities"
640:"SandForce® SF2600 and SF2500 Enterprise datasheet"
338:introduced memory with triple-level cells in 2009.
228:to extend the useful lifetime of the flash device.
1102:
1100:
369:. They expanded their TLC V-NAND technology to 256
34:The differences of the memory cells in comparison
254:demonstrated quad-level cells in 1996, with a 64
246:later demonstrated 2-bit multi-level cell (MLC)
769:"A Review of Multiple-Valued Memory Technology"
1139:"Samsung SSD 840 Series – 3BIT/MLC NAND Flash"
1042:
1040:
908:"Samsung's 840 EVO solid-state drive reviewed"
173:of data was stored in each cell in so-called
8:
1073:
1071:
537:Conference on File and Storage Technologies
508:"NAND Flash is Displacing Hard Disk Drives"
837:Integrated Circuit Engineering Corporation
235:used two-bits-per-cell technology for its
706:
100:Single-level cell or SLC (1 bit per cell)
200:. The higher error rate necessitates an
109:Quad-level cell or QLC (4 bits per cell)
474:
1492:Linux Memory Technology Devices - NAND
867:STOL (Semiconductor Technology Online)
54:capable of storing more than a single
531:; Arif Merchant (February 22, 2016).
427:manufactured by Toshiba, SanDisk and
7:
589:
587:
695:IEEE Transactions on Communications
401:), following the convention set by
1522:Solid-state computer storage media
1216:Shilov, Anton (December 5, 2017).
596:"The Intel SSD 710 (200GB) Review"
25:
887:Pedro Hernandez (June 29, 2018).
130:Examples of MLC memories are MLC
1447:"Samsung 870 QVO SATA 2.5" SSD"
1193:. 11 April 2013. Archived from
1145:from the original on 2013-04-10
619:Micron's MLC NAND Flash Webinar
994:Prophet, Graham (2008-10-02).
889:"SLC vs MLC vs TLC NAND Flash"
58:of information, compared to a
1:
1270:McGlaun, Shane (2009-10-13).
767:P. Glenn Gulak (2018-05-28).
1451:Samsung Semiconductor Global
906:Gasior, Geoff (2013-07-25).
818:– via web.archive.org.
373:Gbit memory in 2015, and 512
358:In 2013, Samsung introduced
266:dynamic random-access memory
318:A triple-level cell storage
1538:
1295:Choi, Young (2009-05-05).
717:10.1109/TCOMM.2015.2453413
1497:Open NAND Flash Interface
830:"The Flash Memory Market"
784:10.1109/ISMVL.1998.679447
893:Enterprise Storage Forum
1166:. AnandTech. 2012-11-16
841:Smithsonian Institution
668:EETimes (2013-08-27).
390:
319:
35:
1083:Kingston Technologies
411:In 2009, Toshiba and
388:
317:
202:error-correcting code
33:
778:. pp. 222–231.
167:floating-gate MOSFET
68:floating-gate MOSFET
1517:Non-volatile memory
1113:Samsung Electronics
594:Shimpi, Anand Lal.
349:Samsung Electronics
136:phase-change memory
1056:. 11 February 2009
625:2007-07-22 at the
391:
320:
293:solid-state drives
274:STMicroelectronics
175:single-level cells
124:bits (see below).
74:Triple-level cells
36:
1402:www.anandtech.com
1377:www.anandtech.com
1251:. 13 October 2009
793:978-0-8186-8371-8
600:www.anandtech.com
487:Solidigm newsroom
324:triple-level cell
310:Triple-level cell
291:As of 2013, some
222:flash file system
158:Single-level cell
60:single-level cell
18:Single-level cell
16:(Redirected from
1529:
1479:
1478:
1475:Samsung Newsroom
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804:. Archived from
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729:
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701:(9): 3069–3081.
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529:Bianca Schroeder
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192:Multi-level cell
82:quad-level cells
44:multi-level cell
21:
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1512:Computer memory
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1421:Shilov, Anton.
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1396:Tallis, Billy.
1395:
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1371:Tallis, Billy.
1370:
1369:
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1354:
1346:Shilov, Anton.
1345:
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1328:
1327:. June 28, 2017
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1198:
1197:on 21 June 2019
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993:
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979:
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974:Hyperstone GmbH
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967:
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912:The Tech Report
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627:Wayback Machine
617:
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572:Hyperstone GmbH
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438:Gbit. In 2018,
435:
420:
395:quad-level cell
383:
381:Quad-level cell
374:
370:
363:
330:) is a type of
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277:
269:
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28:
23:
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15:
12:
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5:
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1486:External links
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1190:Tom's Hardware
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1024:www.micron.com
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377:Gbit in 2017.
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284:memory chip.
198:bit error rate
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145:enterprise MLC
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811:on 2018-05-28
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1454:. Retrieved
1450:
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1430:. Retrieved
1426:
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1405:. Retrieved
1401:
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