341:
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22:
71:
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Picone, Andrea; Giannotti, Dario; Riva, Michele; Calloni, Alberto; Bussetti, Gianlorenzo; Berti, Giulia; Duò, Lamberto; Ciccacci, Franco; Finazzi, Marco; Brambilla, Alberto (22 September 2016). "Controlling the
Electronic and Structural Coupling of C Nano Films on Fe(001) through Oxygen Adsorption at
760:
If an organic material is inserted as tunneling barrier, the picture becomes more complex, as the formation of spin-hybridization-induced polarized states occurs. These states may affect the tunneling transmission coefficient, which is usually kept constant in the Jullière model. Barraud et al., in a
289:
to stimuli (typically impossible to achieve in inorganic materials) there is the hope of being able to easily change the character of the hybridization, hence tuning the properties of the spinterface. This could give rise to a new class of spintronic devices, where the spinterface plays a fundamental
961:
for the two electrodes (pseudo spin valves). The proposed use of spinterfaces in spin valve applications is to interface one of the electrodes with a molecular layer, which is capable of tuning the magnetization properties of the electrode with a change in hybridization. This change of hybridization
433:
the interfaces. The physical principle behind MTJs is that the tunneling of the junction is dependent on the relative orientation of the magnetization of the ferromagnetic electrodes. In fact, in the Jullière model, the tunneling current that passes through the junction is proportional to the sum of
765:
paper, develop a spin transport model that takes into account the effect of the spinterface hybridization. What they observed is that the role of this hybridization in the spin tunneling process is not only relevant, but also capable of inverting the sign of the TMR. This opens the door to a new
400:
schematizes an antiparallel spin polarization of the current injected in the semiconductor. In this way, the injected current will be polarized accordingly to the interface DOS at the Fermi Level and exploiting the fact that molecules usually have intrinsically weak spin-relaxation mechanisms,
1673:
Barraud, Clément; Seneor, Pierre; Mattana, Richard; Fusil, Stéphane; Bouzehouane, Karim; Deranlot, Cyrile; Graziosi, Patrizio; Hueso, Luis; Bergenti, Ilaria; Dediu, Valentin; Petroff, Frédéric; Fert, Albert (13 June 2010). "Unravelling the role of the interface for spin injection into organic
817:: if the alignment of the magnetizations is parallel, the spin valve will exhibit a low resistance state, while, in the case of antiparallel alignment, reflection and spin flip scattering events give rise to a high resistance state. From these considerations one can define and evaluate the
181:. Only more recently, spintronics has been extended to the organic world, with the idea of exploiting the weak spin-relaxation mechanisms of molecules in order to use them for spin transport. Research in this field started off with hybrid replicas of inorganic spintronic devices, such as
201:. Because of this, the interest on ferromagnet/organic interfaces rapidly increased in the scientific community and the term "spinterface" was born. The research is currently aimed at building devices with interfaces engineered in order to tailor the spin injection.
808:
The spin-polarized current, coming from one ferromagnetic electrode, can travel in a non-magnetic metal for a certain distance, given by the spin diffusion length of that metal. When the current enters another ferromagnetic material, the relative orientation of the
647:
545:
651:
The picture of spin-dependent tunneling is represented in figure, and what is observed is that usually there is a larger tunneling current in the case of parallel alignment of the electrode magnetizations. This is given by the fact that, in this case, the term
1825:
Steil, Sabine; Großmann, Nicolas; Laux, Martin; Ruffing, Andreas; Steil, Daniel; Wiesenmayer, Martin; Mathias, Stefan; Monti, Oliver L. A.; Cinchetti, Mirko; Aeschlimann, Martin (17 February 2013). "Spin-dependent trapping of electrons at spinterfaces".
1905:
Zamborlini, Giovanni; Lüftner, Daniel; Feng, Zhijing; Kollmann, Bernd; Puschnig, Peter; Dri, Carlo; Panighel, Mirko; Di Santo, Giovanni; Goldoni, Andrea; Comelli, Giovanni; Jugovac, Matteo; Feyer, Vitaliy; Schneider, Claus
Michael (25 August 2017).
265:. With the final aim of being able to tune and change the electronic and magnetic behavior of the interface, spinterfaces are studied both by inserting them into spintronic devices and, on a more basic level, by investigating the growth of
1502:
Kalappattil, V.; Geng, R.; Liang, S.H.; Mukherjee, D.; Devkota, J.; Roy, A.; Luong, M.H.; Lai, N.D.; Hornak, L.A.; Nguyen, T.D.; Zhao, W.B.; Li, X.G.; Duc, N.H.; Das, R.; Chandra, S.; Srikanth, H.; Phan, M.H. (September 2017).
384:(LUMO), with zero DOS at the Fermi Level. When the two materials are put into contact they influence each other's DOS at the interface: the main effects are a broadening of the molecular orbitals and a possible shift of their
1536:
Santos, T. S.; Lee, J. S.; Migdal, P.; Lekshmi, I. C.; Satpati, B.; Moodera, J. S. (5 January 2007). "Room-Temperature Tunnel
Magnetoresistance and Spin-Polarized Tunneling through an Organic Semiconductor Barrier".
284:
in the molecular layer and, on the other hand, to influence the magnetic character of the ferromagnetic layer by means of hybridization. Combining this with the fact that usually molecules have a very high
745:. By changing the relative orientation of the magnetization of the electrodes it is possible to control the conductance state of the tunneling junction and use this principle for applications, for example
889:
700:
388:. These effects are in general spin-dependent, since they arise from the hybridization, which is strictly dependent on the DOS of the two materials, which is itself spin-unbalanced in the case of the
1580:
Vinzelberg, H.; Schumann, J.; Elefant, D.; Gangineni, R. B.; Thomas, J.; Büchner, B. (May 2008). "Low temperature tunneling magnetoresistance on (La,Sr)MnO3/Co junctions with organic spacer layers".
1615:
Ciudad, David; Gobbi, Marco; Kinane, Christy J.; Eich, Marius; Moodera, Jagadeesh S.; Hueso, Luis E. (December 2014). "Sign
Control of Magnetoresistance Through Chemically Engineered Interfaces".
549:
450:
105:, since the role of interfaces plays a huge part in the functioning of a device. In particular, spinterfaces are widely studied in the scientific community because of their hybrid
743:
970:. If this process is reversible, there is the possibility of switching from high to low resistance in a very effective way, making the devices faster and more efficient.
421:
events to be relevant. The idea of using spinterfaces consists in replacing the inorganic insulating barrier with an organic one. The motivation for this is given by the
921:
948:
417:(TMR) in hybrid magnetic tunneling junctions (MTJs). Conventional MTJs are composed by two ferromagnetic electrodes separated by an insulating layer, thin enough for
372:
governing the spin polarization of the current flow; the DOS of the organic semiconductor will have no unbalance between the spin channels and will display localized
352:
The physical principle that is mainly exploited when talking about spinterfaces is the spin-filtering. This is simply schematized in figure: when one considers the
280:
approach. The scope of building such interfaces is on one side to exploit the spin-polarized character of the electronic structure of the ferromagnet to induce a
189:, trying to obtain spin transport in molecular films. However some devices didn't behave as expected, for example vertical spin valves displaying a negative
1441:
Gobbi, Marco; Golmar, Federico; Llopis, Roger; Casanova, Fèlix; Hueso, Luis E. (12 April 2011). "Room-Temperature Spin
Transport in C60-Based Spin Valves".
161:
devices, emerged in the last decades of the 20th century, first with the observation of the injection of a spin-polarized current from a ferromagnetic to a
1233:
Baibich, M. N.; Broto, J. M.; Fert, A.; Van Dau, F. Nguyen; Petroff, F.; Etienne, P.; Creuzet, G.; Friederich, A.; Chazelas, J. (21 November 1988).
953:
The usual way of creating the possibility of having both parallel and antiparallel alignment is either pinning one of the electrodes by means of
786:
are this time separated by a non-magnetic metal instead of an insulator. The physical principle exploited in this case is no longer related to
1155:
Johnson, Mark; Silsbee, R. H. (21 October 1985). "Interfacial charge-spin coupling: Injection and detection of spin magnetization in metals".
2015:
1768:
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research front, aimed at tailoring the properties of spintronic devices through the right combination of ferromagnetic metals and molecules.
324:
applications, there are no available commercial devices yet, but the applied research is headed towards the use of spinterfaces mainly for
381:
1341:
Sánchez, J. C. Rojas; Vila, L.; Desfonds, G.; Gambarelli, S.; Attané, J. P.; De Teresa, J. M.; Magén, C.; Fert, A. (17 December 2013).
826:
655:
310:
642:{\displaystyle \qquad J^{ap}\propto D_{1}^{\uparrow }\cdot D_{2}^{\downarrow }+D_{1}^{\downarrow }\cdot D_{2}^{\uparrow }}
193:. It was then quickly understood that the molecular layers don't just play a transport role but they can also act on the
540:{\displaystyle J^{p}\propto D_{1}^{\uparrow }\cdot D_{2}^{\uparrow }+D_{1}^{\downarrow }\cdot D_{2}^{\downarrow }\qquad }
1390:
Xiong, Z. H.; Wu, Di; Valy
Vardeny, Z.; Shi, Jing (26 February 2004). "Giant magnetoresistance in organic spin-valves".
368:(DOS) of the metal will be unbalanced between the two spin channels, with the difference of the up and down DOS at the
340:
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is interfaced with another solid, the terminations of the two different materials influence each other by means of
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to electrical and optical stimuli than metals. This gives rise to the possibility of efficiently tuning the
1963:
Bogani, Lapo; Wernsdorfer, Wolfgang (1 March 2008). "Molecular spintronics using single-molecule magnets".
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Cinchetti, Mirko; Dediu, V. Alek; Hueso, Luis E. (25 April 2017). "Activating the molecular spinterface".
174:
1004:
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357:
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1294:"Enhanced magnetoresistance in layered magnetic structures with antiferromagnetic interlayer exchange"
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217:, which play a fundamental role in the functioning of many applications. The breaking of the bulk
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1343:"Spin-to-charge conversion using Rashba coupling at the interface between non-magnetic materials"
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applications. By a good material choice one is then able to filter the spins at the spinterface.
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1786:"Nobel Lecture: Quasielectric fields and band offsets: teaching electrons new tricks"
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233:, which are sometimes impossible to find in the bulk material. In particular, when a
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130:
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Cornia, Andrea; Seneor, Pierre (25 April 2017). "Spintronics: The molecular way".
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with respect to the first electrode can lead to a change in the resistance of the
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displays, which can be flexible, thinner, faster and more power efficient than
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are respectively the resistances for the antiparallel and parallel alignment.
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1908:"Multi-orbital charge transfer at highly oriented organic/metal interfaces"
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consumption applications has led to an ever-growing attention towards the
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126:
1471:
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Julliere, M. (September 1975). "Tunneling between ferromagnetic films".
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1984:
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Sanvito, Stefano (13 June 2010). "The rise of spinterface science".
1292:
Binasch, G.; Grünberg, P.; Saurenbach, F.; Zinn, W. (1 March 1989).
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represents the case of a parallel injection of current, while panel
1235:"Giant Magnetoresistance of (001)Fe/(001)Cr Magnetic Superlattices"
1763:(Third ed.). Berlin, Heidelberg: Springer Berlin Heidelberg.
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963:
796:
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Applied research on spinterfaces is often focused on studying the
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2008:
Ultrathin magnetic structures III fundamentals of nano magnetism
966:(making these systems suitable for ultra-fast applications) and
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15:
1120:
Cinchetti, Mirko (1 December 2014). "Topology communicates".
884:{\displaystyle MR={\frac {\rho _{ap}-\rho _{p}}{\rho _{p}}}}
695:{\displaystyle D_{1}^{\downarrow }\cdot D_{2}^{\downarrow }}
209:
The shrinking of device sizes and the attention towards low
1505:"Role of the magnetic anisotropy in organic spin valves"
782:
junctions, the difference is that the two ferromagnetic
301:
are currently used in various applications, for example
962:
at the spinterface can be induced in principle both by
313:, intended for large, low-cost electronic products and
149:, which is the scientific field that aims to study the
46:
36:
434:
the products of the DOS of the single spin channels:
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or directly using different materials with different
929:
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829:
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will be way larger than all the other terms, making
101:. This is a widely investigated topic in molecular
1509:Journal of Science: Advanced Materials and Devices
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778:are built in a very similar way with respect to
261:, are interfaced and they usually form a strong
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245:is highly influenced by the properties of the
165:metal and subsequently with the discovery of
8:
1761:Surfaces and Interfaces of Solid Materials
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401:molecular layers are great candidates for
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1872:ACS Applied Materials & Interfaces
137:of the interface at the atomic scale.
441:Simplified picture of spin-dependent
7:
2006:Bland, J.A.C.; Heinrich, B. (2005).
1784:Kroemer, Herbert (22 October 2001).
429:of molecules and the possibility of
249:. In particular, in spinterfaces, a
173:. The field evolved turning towards
382:lowest unoccupied molecular orbital
125:can be controlled by acting on the
378:highest occupied molecular orbital
215:physics of surfaces and interfaces
14:
392:. As a matter of example, panel
311:organic field-effect transistors
89:is a term coined to indicate an
20:
738:{\displaystyle J^{p}>J^{ap}}
553:
536:
257:, which display very different
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1:
1559:10.1103/PhysRevLett.98.016601
1220:10.1016/0375-9601(75)90174-7
326:magnetic tunneling junctions
187:magnetic tunneling junctions
1522:10.1016/j.jsamd.2017.07.010
1260:10.1103/physrevlett.61.2472
1177:10.1103/PhysRevLett.55.1790
409:Magnetic Tunneling Junction
177:related phenomena, such as
2054:
1932:10.1038/s41467-017-00402-0
1582:Journal of Applied Physics
916:{\displaystyle \rho _{ap}}
197:of the ferromagnet at the
113:composition. In fact, the
1811:10.1103/RevModPhys.73.783
1790:Reviews of Modern Physics
943:{\displaystyle \rho _{p}}
315:biodegradable electronics
1319:10.1103/physrevb.39.4828
990:Tunnel magnetoresistance
415:tunnel magnetoresistance
294:Physics and applications
167:tunnel magnetoresistance
1539:Physical Review Letters
1239:Physical Review Letters
1157:Physical Review Letters
995:Giant magnetoresistance
171:giant magnetoresistance
35:, as no other articles
1884:10.1021/acsami.6b09641
1637:10.1002/adma.201401283
1588:(9): 093720–093720–5.
1463:10.1002/adma.201004672
1134:10.1038/nnano.2014.284
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801:Schematic of a pseudo
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431:chemically engineering
425:, low cost and higher
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299:Organic semiconductors
241:. The behavior of the
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1912:Nature Communications
1347:Nature Communications
1122:Nature Nanotechnology
1005:Orbital hybridisation
1000:Molecular electronics
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792:electrical resistance
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427:spin-relaxation times
358:organic semiconductor
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259:electronic properties
255:organic semiconductor
99:organic semiconductor
76:organic semiconductor
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2010:. Berlin: Springer.
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360:on their own (panel
269:molecular layers on
235:solid-state material
1977:2008NatMa...7..179B
1924:2017NatCo...8..335Z
1878:(39): 26418–26424.
1840:2013NatPh...9..242S
1802:2001RvMP...73..783K
1759:Lüth, Hans (1995).
1698:2010NatPh...6..615B
1629:2014AdM....26.7561C
1594:2008JAP...103i3720V
1551:2007PhRvL..98a6601S
1455:2011AdM....23.1609G
1412:10.1038/nature02325
1404:2004Natur.427..821X
1359:2013NatCo...4.2944S
1310:1989PhRvB..39.4828B
1251:1988PhRvL..61.2472B
1212:1975PhLA...54..225J
1169:1985PhRvL..55.1790J
1091:2017NatMa..16..507C
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1617:Advanced Materials
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330:spin valves
183:spin valves
159:solid-state
153:-dependent
147:spintronics
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985:Spin valve
803:spin valve
784:electrodes
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322:spintronic
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59:May 2023
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