358:
will have a high electric field. Under the influence of this electric field, it will move along the cathode to the anode. It is impossible to balance the population in both bands, so thin slices of high-field strength will always be in a background of low-field strength. So in practice, with a slight increase in forward voltage, a low conductivity segment is created at the cathode, resistance increases, the segment moves along the bar to the anode, and when it reaches the anode, it is absorbed, and a new segment is created at the cathode to keep the total voltage constant. Any existing slice is quenched if the voltage is lowered and resistance decreases again.
224:
378:
483:
well known for being extremely static sensitive. On most commercial units, this part is protected with a parallel resistor and other components, and a variant is used in some Rb atomic clocks. The mixer diode is useful for lower frequency applications even if the Gunn diode is weakened from use, and some amateur radio enthusiasts have used them in conjunction with an external oscillator or n/2 wavelength Gunn diode for satellite finding and other applications.
280:
31:
442:, "slow-speed" sensors (to detect pedestrian and traffic movement up to 85 km/h (50 mph)), traffic signal controllers, automatic door openers, automatic traffic gates, process control equipment to monitor throughput, burglar alarms and equipment to detect trespassers, sensors to avoid derailment of trains, remote vibration detectors, rotational speed tachometers, moisture content monitors.
130:
482:
ham bands, and sometimes 22 GHz security alarms are modified as the diode(s) can be put in a slightly detuned cavity with layers of copper or aluminium foil on opposite edges for moving to the licensed amateur band. If intact, the mixer diode is reused in its existing waveguide, and these parts are
341:
and are given a sufficiently long mean free path to acquire the needed energy by applying a strong electric field, or they are injected by a cathode with the right energy. With forward voltage applied, the Fermi level in the cathode moves into the third band, and reflections of ballistic electrons
104:
but prefer TED. In the Gunn diode, three regions exist: two are heavily N-doped on each terminal, with a thin layer of lightly n-doped material between them. When a voltage is applied to the device, the electrical gradient will be largest across the thin middle layer. If the voltage increases, the
357:
When a high enough potential is applied to the diode, the charge carrier density along the cathode becomes unstable and will develop small segments of low conductivity, with the rest of the cathode having high conductivity. Most of the cathode voltage drop will occur across the segment so that it
491:
Gunn oscillators are used as local oscillators for millimeter-wave and submillimeter-wave radio astronomy receivers. The Gunn diode is mounted in a cavity tuned to resonate at twice the fundamental frequency of the diode. The cavity length is changed by a micrometer adjustment. Gunn oscillators
353:
or drift velocity of the electrons in that band is lower. As the forward voltage increases, more and more electrons can reach the higher energy band, causing them to move slower (though they have higher energies), and the current through the device decreases. This creates a region of negative
458:. British radio amateurs first used them in the late 1970s, and many Gunnplexer designs have been published in journals. They typically consist of an approximately 3 inch waveguide into which the diode is mounted. A low voltage (less than 12 volt) direct current power supply that can be
164:
voltage to bias the device into its negative resistance region. In effect, the diode's negative differential resistance cancels the load circuit's positive resistance, thus creating a circuit with zero differential resistance, which will produce spontaneous oscillations. The oscillation
361:
In this context, ballistic electrons—those that travel with minimal scattering—play a crucial role. They can move through the semiconductor with a long mean free path, effectively gaining the necessary energy to transition to the higher energy states.
334:, that is, electrons in the conduction band but moving with sufficient kinetic energy such that they are able to reach the higher band. The additional kinetic energy is typically provided by an electric field, applied externally to the device.
330:. This third band (there could be more of them) is at higher energy than the normal conduction band and is typically empty at room temperature until energy is supplied to promote electrons to it. The energy comes from the kinetic energy of
105:
layer's current will first increase. Still, eventually, at higher field values, the conductive properties of the middle layer are altered, increasing its resistivity and causing the current to fall. This means a Gunn diode has a region of
393:
Because of their high-frequency capability, Gunn diodes are mainly used at microwave frequencies and above. They can produce some of the highest output power of any semiconductor device at these frequencies. Their most common use is in
275:
The Gunn effect and its relation to the
Watkins–Ridley–Hilsum effect entered electronics literature in the early 1970s, e.g., in books on transferred electron devices and, more recently, on nonlinear wave methods for charge transport.
526:
Gribnikov, Z. S., Bashirov, R. R., & Mitin, V. V. (2001). Negative effective mass mechanism of negative differential drift velocity and terahertz generation. IEEE Journal of
Selected Topics in Quantum Electronics, 7(4),
290:, which functions as a resonator to determine the frequency. The negative resistance of the diode excites microwave oscillations in the cavity which radiate out the rectangular hole into a
250:
showed in June 1965 that only a transferred-electron mechanism could explain the experimental results. It was realized that the oscillations he detected were explained by the
342:
starting around the Fermi level are minimized by matching the density of states and using the additional interface layers to let the reflected waves interfere destructively.
246:
in 1962, he discovered the effect because he refused to accept inconsistent experimental results in gallium arsenide as "noise", and determined the cause. Alan
Chynoweth of
635:
406:(two terminal) device, an amplifier circuit must separate the outgoing amplified signal from the incoming input signal to prevent coupling. One common circuit is a
1509:
152:
The negative differential resistance, combined with the timing properties of the intermediate layer, is responsible for the diode's largest use: in
1150:
450:
By virtue of their low voltage operation, Gunn diodes can serve as microwave frequency generators for very low-powered (few-milliwatt) microwave
169:
is determined partly by the properties of the middle diode layer but can be tuned by external factors. In practical oscillators, an electronic
251:
1067:
462:
appropriately is used to drive the diode. The waveguide is blocked at one end to form a resonant cavity, and the other end usually feeds a
346:
848:
628:
427:
110:
831:
727:
185:. The diode is usually mounted inside the cavity. The diode cancels the resonator's loss resistance, producing oscillations at its
971:
698:
59:
1019:
818:
189:. The frequency can be tuned mechanically, by adjusting the size of the cavity, or in the case of YIG spheres, by changing the
621:
96:
material, whereas most diodes consist of both P and N-doped regions. It, therefore, conducts in both directions and cannot
1683:
1678:
1050:
802:
854:
791:
247:
1514:
1061:
223:
1268:
982:
825:
710:
591:
495:
The Gunn oscillator frequency is multiplied by a diode frequency multiplier for submillimeter-wave applications.
307:
1135:
1277:
987:
843:
431:
1288:
1008:
807:
90:
1457:
1024:
889:
865:
1526:
1478:
1299:
1115:
1030:
961:
797:
395:
327:
153:
113:
curve, in which an increase of applied voltage causes a decrease in current. This property allows it to
71:
1600:
1344:
1239:
1013:
906:
760:
721:
652:
644:
331:
231:
1320:
1228:
1120:
956:
933:
479:
264:
198:
138:
106:
474:
receiver to enable listening of other amateur stations. Gunnplexers are most commonly used in the
377:
1625:
1485:
1193:
1160:
976:
860:
838:
186:
606:
1620:
1541:
1432:
1384:
1213:
1140:
1102:
544:
475:
350:
492:
capable of generating over 50 mW over a 50% tuning range (one waveguide band) are available.
349:
of the electrons in the third band is higher than those in the usual conduction band, so the
297:. The frequency can be adjusted by changing the size of the cavity using the slot head screw.
117:, functioning as a radio frequency amplifier, or to become unstable and oscillate when it is
1336:
1283:
1145:
1110:
749:
439:
315:
284:
279:
212:
204:
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17:
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1399:
1130:
1040:
884:
471:
467:
382:
323:
208:
83:
79:
1588:
1369:
1359:
1125:
928:
435:
190:
161:
365:
The laboratory methods used to select materials for manufacturing Gunn diodes include
1667:
1650:
1473:
1389:
1208:
1035:
1003:
539:
311:
100:
alternating current like other diodes, which is why some sources do not use the term
93:
55:
1531:
1519:
1407:
1374:
1203:
1188:
771:
755:
463:
386:
319:
259:
255:
160:
frequencies and above. A microwave oscillator can be created simply by applying a
30:
1573:
1315:
1264:
1170:
1155:
938:
900:
513:
Gunn Effect and the THz
Frequency Power Generation in n(+)-n-n(+) GaN Structures
451:
338:
63:
470:
diode" is inserted into the waveguide, and it is often connected to a modified
262:
who in scientific papers in 1961 showed that bulk semiconductors could display
1645:
1635:
1568:
1442:
1412:
1379:
1354:
1349:
1326:
1198:
1178:
1056:
918:
781:
683:
678:
673:
459:
411:
239:
182:
67:
548:
238:
The Gunn diode is based on the Gunn effect, and both are named for physicist
89:
Its internal construction is unlike other diodes in that it consists only of
1608:
1452:
1447:
1437:
1364:
1244:
1078:
1073:
998:
923:
590:, University of Oklahoma, Department of Physics and Astronomy, course notes.
516:
418:
is needed to isolate the bias current from the high-frequency oscillations.
399:
291:
174:
170:
166:
157:
114:
97:
75:
1630:
1578:
1558:
1536:
1422:
1417:
1305:
1294:
1223:
993:
415:
403:
613:
1490:
1427:
1249:
1234:
1088:
1045:
693:
326:
which define a semiconductor material and which is exploited to design
118:
129:
1563:
1254:
1218:
1183:
743:
715:
688:
663:
268:, meaning that increasing the applied voltage causes the current to
66:. It is based on the "Gunn effect" discovered in 1962 by physicist
1640:
1551:
1310:
1083:
876:
738:
733:
376:
366:
278:
222:
128:
51:
29:
1583:
966:
912:
813:
766:
704:
318:(GaAs), have another energy band or sub-band in addition to the
227:
617:
283:
Russian Gunn diode oscillator. The diode is mounted inside the
537:
John
Voelcker (1989). "The Gunn effect: puzzling over noise".
385:. The grey assembly attached to the end of the copper-colored
243:
194:
438:, pedestrian safety systems, "distance travelled" recorders,
389:
is the Gunn diode oscillator which generates the microwaves.
354:
differential resistance in the voltage/current relationship.
207:
Gunn diodes are made for frequencies up to 200 GHz,
511:
V. GruĹľinskis, J.H. Zhao, O.Shiktorov and E. Starikov,
173:
is usually added to control frequency in the form of a
193:. Gunn diodes are used to build oscillators in the 10
426:
Gunn diode oscillators generate microwave power for:
515:, Materials Science Forum, 297--298, 34--344, 1999.
86:
data link transmitters, and automatic door openers.
1599:
1499:
1466:
1398:
1335:
1263:
1169:
1101:
947:
875:
780:
662:
651:
601:J.E. Carlstrom, R.L. Plambeck, and D. D. Thornton.
603:A Continuously Tunable 65-115 GHz Gunn Oscillator
434:, sensors for monitoring the flow of traffic,
234:conducting an experiment with the Gunn effect.
629:
561:P. J. Bulman, G. S. Hobson and B. C. Taylor.
8:
576:Nonlinear Wave Methods for Charge Transport
574:Luis L. Bonilla and Stephen W. Teitsworth,
402:to amplify signals. Because the diode is a
659:
636:
622:
614:
367:angle-resolved photoemission spectroscopy
504:
337:These electrons either start below the
398:, but they are also used in microwave
7:
1068:Three-dimensional integrated circuit
849:Programmable unijunction transistor
410:that separates the signals using a
750:Multi-gate field-effect transistor
428:airborne collision avoidance radar
25:
728:Insulated-gate bipolar transistor
422:Sensors and measuring instruments
972:Heterostructure barrier varactor
699:Chemical field-effect transistor
565:, Academic Press, New York, 1972
137:curve of a Gunn diode. It shows
107:negative differential resistance
60:negative differential resistance
1020:Mixed-signal integrated circuit
254:, named for British physicists
111:current–voltage characteristic
1:
141:above the threshold voltage (
1051:Silicon controlled rectifier
913:Organic light-emitting diode
803:Diffused junction transistor
563:Transferred electron devices
252:Ridley–Watkins–Hilsum theory
211:materials can reach up to 3
855:Static induction transistor
792:Bipolar junction transistor
744:MOS field-effect transistor
716:Fin field-effect transistor
248:Bell Telephone Laboratories
58:electronic component, with
44:transferred electron device
18:Transferred electron device
1700:
1062:Static induction thyristor
78:, in applications such as
1231:(Hexode, Heptode, Octode)
983:Hybrid integrated circuit
826:Light-emitting transistor
308:electronic band structure
62:, used in high-frequency
34:A Russian-made Gunn diode
1278:Backward-wave oscillator
988:Light emitting capacitor
844:Point-contact transistor
814:Junction Gate FET (JFET)
1289:Crossed-field amplifier
808:Field-effect transistor
70:. Its main uses are in
1458:Voltage-regulator tube
1025:MOS integrated circuit
890:Constant-current diode
866:Unijunction transistor
390:
298:
235:
154:electronic oscillators
149:
125:Gunn diode oscillators
72:electronic oscillators
35:
1527:Electrolytic detector
1300:Inductive output tube
1116:Low-dropout regulator
1031:Organic semiconductor
962:Printed circuit board
798:Darlington transistor
645:Electronic components
380:
328:semiconductor devices
314:materials, including
282:
226:
132:
33:
1684:Terahertz technology
1679:Microwave technology
1345:Beam deflection tube
1014:Metal-oxide varistor
907:Light-emitting diode
761:Thin-film transistor
722:Floating-gate MOSFET
408:reflection amplifier
1321:Traveling-wave tube
1121:Switching regulator
957:Printed electronics
934:Step recovery diode
711:Depletion-load NMOS
436:car radar detectors
332:ballistic electrons
265:negative resistance
139:negative resistance
121:with a DC voltage.
1626:Crystal oscillator
1486:Variable capacitor
1161:Switched capacitor
1103:Voltage regulators
977:Integrated circuit
861:Tetrode transistor
839:Pentode transistor
832:Organic LET (OLET)
819:Organic FET (OFET)
578:, Wiley-VCH, 2010.
391:
299:
258:, Tom Watkins and
236:
187:resonant frequency
150:
42:, also known as a
36:
1661:
1660:
1621:Ceramic resonator
1433:Mercury-arc valve
1385:Video camera tube
1337:Cathode-ray tubes
1097:
1096:
705:Complementary MOS
466:. An additional "
446:Radio amateur use
201:frequency range.
54:, a two-terminal
16:(Redirected from
1691:
1515:electrical power
1400:Gas-filled tubes
1284:Cavity magnetron
1111:Linear regulator
660:
638:
631:
624:
615:
608:
599:
593:
585:
579:
572:
566:
559:
553:
552:
534:
528:
524:
518:
509:
440:motion detectors
432:anti-lock brakes
324:conduction bands
316:gallium arsenide
205:Gallium arsenide
179:microwave cavity
133:Current-voltage
80:radar speed guns
50:), is a form of
21:
1699:
1698:
1694:
1693:
1692:
1690:
1689:
1688:
1664:
1663:
1662:
1657:
1595:
1510:audio and video
1495:
1462:
1394:
1331:
1259:
1240:Photomultiplier
1165:
1093:
1041:Quantum circuit
949:
943:
885:Avalanche diode
871:
783:
776:
665:
654:
647:
642:
612:
611:
600:
596:
588:The Gunn effect
586:
582:
573:
569:
560:
556:
536:
535:
531:
525:
521:
510:
506:
501:
489:
487:Radio astronomy
448:
424:
383:radar speed gun
375:
304:
232:W. Deter Straub
221:
209:gallium nitride
147:
127:
84:microwave relay
28:
23:
22:
15:
12:
11:
5:
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1589:Wollaston wire
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1396:
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1387:
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1377:
1372:
1370:Selectron tube
1367:
1362:
1360:Magic eye tube
1357:
1352:
1347:
1341:
1339:
1333:
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1324:
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974:
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964:
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951:
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936:
931:
929:Schottky diode
926:
921:
916:
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904:
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420:
374:
371:
347:effective mass
303:
300:
230:ERC scientist
220:
217:
191:magnetic field
145:
126:
123:
26:
24:
14:
13:
10:
9:
6:
4:
3:
2:
1696:
1685:
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1651:mercury relay
1649:
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1498:
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1475:
1474:Potentiometer
1472:
1471:
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1397:
1391:
1390:Williams tube
1388:
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1378:
1376:
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1371:
1368:
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1220:
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1215:
1212:
1210:
1209:Fleming valve
1207:
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1200:
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1187:
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1177:
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1055:
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1049:
1047:
1044:
1042:
1039:
1037:
1036:Photodetector
1034:
1032:
1029:
1026:
1023:
1021:
1018:
1015:
1012:
1010:
1007:
1005:
1004:Memtransistor
1002:
1000:
997:
995:
992:
989:
986:
984:
981:
978:
975:
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968:
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899:
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653:Semiconductor
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605:, IEEE, 1985
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540:IEEE Spectrum
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381:Disassembled
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345:In GaAs, the
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94:semiconductor
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56:semiconductor
53:
49:
45:
41:
32:
27:Form of diode
19:
1408:Cold cathode
1375:Storage tube
1265:Vacuum tubes
1214:Neutron tube
1189:Beam tetrode
1171:Vacuum tubes
895:
756:Power MOSFET
602:
597:
587:
583:
575:
570:
562:
557:
538:
532:
522:
512:
507:
494:
490:
472:FM broadcast
464:horn antenna
455:
452:transceivers
449:
425:
407:
392:
387:horn antenna
373:Applications
364:
360:
356:
344:
336:
305:
294:
287:
274:
269:
263:
260:Cyril Hilsum
256:Brian Ridley
237:
203:
151:
142:
134:
101:
88:
74:to generate
47:
43:
39:
37:
1574:Transformer
1316:Sutton tube
1156:Charge pump
1009:Memory cell
939:Zener diode
901:Laser diode
784:transistors
666:transistors
456:Gunnplexers
396:oscillators
339:Fermi level
295:(not shown)
288:(metal box)
64:electronics
1668:Categories
1646:reed relay
1636:Parametron
1569:Thermistor
1547:resettable
1506:Connector
1467:Adjustable
1443:Nixie tube
1413:Crossatron
1380:Trochotron
1355:Iconoscope
1350:Charactron
1327:X-ray tube
1199:Compactron
1179:Acorn tube
1136:Buck–boost
1057:Solaristor
919:Photodiode
896:Gunn diode
892:(CLD, CRD)
674:Transistor
499:References
412:circulator
400:amplifiers
240:J. B. Gunn
183:YIG sphere
76:microwaves
68:J. B. Gunn
40:Gunn diode
1609:Capacitor
1453:Trigatron
1448:Thyratron
1438:Neon lamp
1365:Monoscope
1245:Phototube
1229:Pentagrid
1194:Barretter
1079:Trancitor
1074:Thyristor
999:Memristor
924:PIN diode
701:(ChemFET)
549:0018-9235
460:modulated
302:Principle
292:waveguide
213:terahertz
175:waveguide
171:resonator
167:frequency
158:microwave
146:threshold
1631:Inductor
1601:Reactive
1579:Varistor
1559:Resistor
1537:Antifuse
1423:Ignitron
1418:Dekatron
1306:Klystron
1295:Gyrotron
1224:Nuvistor
1141:Split-pi
1027:(MOS IC)
994:Memistor
752:(MuGFET)
746:(MOSFET)
718:(FinFET)
527:630-640.
416:bias tee
404:one-port
351:mobility
310:of some
270:decrease
1532:Ferrite
1500:Passive
1491:Varicap
1479:digital
1428:Krytron
1250:Tetrode
1235:Pentode
1089:Varicap
1070:(3D IC)
1046:RF CMOS
950:devices
724:(FGMOS)
655:devices
454:called
320:valence
219:History
115:amplify
109:in its
98:rectify
91:N-doped
1674:Diodes
1564:Switch
1255:Triode
1219:Nonode
1184:Audion
1064:(SITh)
948:Other
915:(OLED)
877:Diodes
828:(LET)
810:(FET)
782:Other
730:(IGBT)
707:(CMOS)
694:BioFET
689:BiCMOS
547:
480:24 GHz
476:10 GHz
285:cavity
119:biased
1641:Relay
1614:types
1552:eFUSE
1323:(TWT)
1311:Maser
1302:(IOT)
1291:(CFA)
1280:(BWO)
1204:Diode
1151:SEPIC
1131:Boost
1084:TRIAC
1053:(SCR)
1016:(MOV)
990:(LEC)
909:(LED)
868:(UJT)
857:(SIT)
851:(PUT)
794:(BJT)
763:(TFT)
739:LDMOS
734:ISFET
468:mixer
242:. At
181:, or
102:diode
52:diode
1584:Wire
1542:Fuse
1126:Buck
979:(IC)
967:DIAC
903:(LD)
772:UMOS
767:VMOS
684:PMOS
679:NMOS
664:MOS
545:ISSN
478:and
414:. A
322:and
306:The
228:NASA
135:(IV)
1146:Ćuk
244:IBM
199:THz
197:to
195:GHz
156:at
48:TED
1670::
1520:RF
1269:RF
543:.
430:,
369:.
272:.
215:.
177:,
162:DC
148:)
82:,
38:A
1271:)
1267:(
637:e
630:t
623:v
551:.
143:V
46:(
20:)
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