582:. The new fabrication plant was to be named Fab 42, and construction was meant to start in the middle of 2011. Intel billed the new facility as "the most advanced, high-volume manufacturing facility in the world," and said it would come on line in 2013. Intel since decided to postpone opening this facility and instead upgrade its existing facilities to support 14-nm chips. On May 17, 2011, Intel announced a roadmap for 2014 that included "14 nm" transistors for their
51:
1578:
436:
Since at least 1997, "process nodes" have been named purely on a marketing basis, and have no relation to the dimensions on the integrated circuit; neither gate length, metal pitch or gate pitch on a "14nm" device is fourteen nanometers. For example, TSMC and
Samsung's "10 nm" processes are
661:
width, using a sidewall spacer process. It had erstwhile been suggested in 2003 that for the 16 nm node, a logic transistor would have a gate length of about 5 nm. In
December 2007, Toshiba demonstrated a prototype memory unit that used 15-nanometre thin lines.
709:
processors, the first product to be manufactured on Intel's "14 nm" manufacturing process. The first systems based on the Core M processor were to become available in Q4 2014 — according to the press release. "Intel's 14 nanometer technology uses second-generation
531:
materials. The extent of damage is typically 20 nm thick, but can also go up to about 100 nm. The damage sensitivity is expected to get worse as the low-k materials become more porous. For comparison, the atomic radius of an unconstrained
1658:
Lower numbers are better, except for transistor density, in which case the opposite is true. Transistor gate pitch is also referred to as CPP (contacted poly pitch), and interconnect pitch is also referred to as MMP (minimum metal pitch).
3404:
1300:
714:
to deliver industry-leading performance, power, density and cost per transistor," said Mark Bohr, Intel senior fellow, Technology and
Manufacturing Group, and director, Process Architecture and Integration.
3302:
362:
2318:
3343:
1650:
2979:
943:
403:
355:
1874:
Noh, M-S.; et al. (2010). Dusa, Mircea V; Conley, Will (eds.). "Implementing and validating double patterning in 22-nm to 16-nm product design and patterning flows".
2773:
1718:
2126:
Kaneko, A; Yagashita, A; Yahashi, K; Kubota, T; et al. (2005). "Sidewall transfer process and selective gate sidewall spacer formation technology for sub-15nm
2811:
626:
nm FinFET process in 2001. In 2002, an international team of researchers at UC Berkeley, including Shibly Ahmed (Bangladeshi), Scott Bell, Cyrus Tabery (Iranian),
348:
2407:
3309:
2733:"NVIDIA GeForce RTX 30 Series & Ampere GPUs Further Detailed - GA102/GA104 GPU Specs & RTX 3090, RTX 3080, RTX 3070 Performance & Features Revealed"
2465:
3099:
1573:{\displaystyle {\rm {0.6\times {\frac {NAND2\ Tr\ Count}{NAND2\ Cell\ Area}}+0.4\times {\frac {Scan\ Flip\ Flop\ Tr\ Count}{Scan\ Flip\ Flop\ Cell\ Area}}=}}}
1953:
2167:
880:
architecture, incorporating "14 nm" FinFET technology from
Samsung which had erstwhile been licensed to GlobalFoundries for GlobalFoundries to build.
2483:
635:
2010:
1804:
Gross, T.; et al. (2008). "Detection of nanoscale etch and ash damage to nanoporous methyl silsesquioxane using electrostatic force microscopy".
3335:
702:
said, " will be shipping by the end of this year." However, as of
February 2014, shipment had at time erstwhile been delayed further until Q4 2014.
2063:
Ahmed, Shibly; Bell, Scott; Tabery, Cyrus; Bokor, Jeffrey; Kyser, David; Hu, Chenming; Liu, Tsu-Jae King; Yu, Bin; Chang, Leland (December 2002).
898:
On July 22, 2018, GlobalFoundries announced their "12 nm" Leading-Performance (12LP) process, based on a licensed 14LP process from
Samsung.
2604:
3047:
3125:
3209:
606:
Central
Research Laboratory began collaborating with an international team of researchers on further developing FinFET technology, including
2562:"Talks of foundry partnership between NVIDIA and Samsung (14nm) didn't succeed, and the GPU maker decided to revert to TSMC's 16nm process"
706:
543:
Tela
Innovations and Sequoia Design Systems developed a methodology allowing double exposure for the "16 nm"/"14 nm" node circa 2010.
63:
2626:
2199:
1831:
Axelrad, V.; et al. (2010). Rieger, Michael L; Thiele, Joerg (eds.). "16nm with 193nm immersion lithography and double exposure".
2064:
2040:
1931:
615:
2282:
2087:
2960:
3226:
3150:
2561:
905:, which were made on TSMC's "12 nm" process and had a transistor density of 24.67 million transistors per square millimeter.
3377:
38:
2850:
2707:
2440:
2350:
854:
architecture, which incorporated "14 nm" FinFET technology from
Samsung. The technology had at that time been licensed to
799:
571:
509:
2908:
2786:
1692:
2332:
2582:
2185:
695:
2732:
1917:
3126:"Intel Announces 8th Generation Core "Coffee Lake" Desktop Processors: Six-core i7, Four-core i3, and Z370 Motherboards"
2824:
2509:
2417:
2035:
666:
2670:
1777:
material induced by different patterning plasma processes studied by energy filtered and analytical scanning TEM".
902:
832:
1957:
501:
1583:
665:
In
December 2009, National Nano Device Laboratories, owned by the Taiwanese government, produced a "16 nm"
828:
3021:
2268:
877:
578:, designed to manufacture chips using the "14 nm" manufacturing processes and leading-edge 300 mm
551:
had also, at that time, begun implementing double patterning in "22 nm" and "16 nm" design flows.
2746:
2153:
2869:
843:
658:
330:
1992:
2935:
884:
847:
537:
513:
3073:
1755:
2234:
2011:"Implementing and validating double patterning in 22-nm to 16-nm product design and patterning flows"
1883:
1840:
766:
765:
On September 5, 2014, Intel launched the first three Broadwell-based processors that belonged to the
305:
2536:
2382:
1737:
2319:"Intel Discloses Newest Microarchitecture and 14 Nanometer Manufacturing Process Technical Details"
1738:"Exclusive: Is Intel Really Starting To Lose Its Process Lead? 7nm Node Slated For Release in 2022"
1281:
923:
680:
579:
544:
528:
521:
448:
3175:
2250:
2093:
1899:
1856:
851:
505:
438:
2466:"Samsung Announces Mass Production of Industry's First 14nm FinFET Mobile Application Processor"
1719:"14nm, 7nm, 5nm: How low can CMOS go? It depends if you ask the engineers or the economists..."
705:
In August 2014, Intel announced details of the "14 nm" microarchitecture for its upcoming
2644:
2412:
2203:
2179:
2083:
825:
791:
773:
536:
is 0.11 nm. Thus about 90 Si atoms would span the channel length, leading to substantial
423:
113:
3100:"Intel Announces 7th Gen Kaby Lake: 14nm PLUS, Six Notebook SKUs, Desktop coming in January"
2995:
2242:
2135:
2075:
2031:
1891:
1848:
1813:
1786:
780:
711:
639:
320:
309:
295:
86:
77:
2101:
1939:
2894:
2819:
2781:
2296:
1268:
938:
855:
552:
383:
335:
3022:"Samsung Announces Second-Gen 14nm Low Power Plus (14LPP) Process Now In Mass Production"
122:
104:
95:
2238:
1932:"IBM and ARM to Collaborate on Advanced Semiconductor Technology for Mobile Electronics"
1887:
1844:
1677:
3303:"International Technology Roadmap for Semiconductors 2.0 2015 Edition Executive Report"
2974:
699:
657:
demonstrated a 15 nm FinFET process, with a 15 nm gate length and 10 nm
315:
158:
152:
146:
140:
134:
128:
1978:
3398:
3386:
3367:
1903:
1264:
755:
647:
627:
452:
387:
325:
230:
212:
203:
194:
185:
176:
167:
3277:
3252:
2360:
2254:
1860:
2097:
798:, which utilized "14 nm" Intel processors. Of note is the i7-5557U, which has
560:
275:
257:
248:
239:
496:
The resolutions of a "14 nm" device are difficult to achieve in a polymeric
3336:"SMIC Begins Volume Production of 14 nm FinFET Chips: China's First FinFET Line"
1722:
795:
631:
611:
2139:
2079:
1817:
1790:
813:
chips that are fabricated in both "14 nm" by Samsung and "16 nm" by
787:
735:
591:
587:
464:
290:
50:
1756:"Life at 10nm. (Or is it 7nm?) And 3nm - Views on Advanced Silicon Platforms"
17:
2675:
2605:"AMD Announces RX 470 & RX 460 Specifications; Shipping in Early August"
862:
806:
691:
3048:"Samsung Details 11LPP Process Technology: 10 nm BEOL Meets 14 nm Elements"
2246:
618:
researchers. In 1998, the team successfully fabricated devices down to a 17
555:
reported taping out "16 nm" test chips in 2010. On January 17, 2011,
2355:
866:
810:
772:
In February 2015, Samsung announced that their flagship smartphones, the
727:
673:
548:
517:
456:
718:
In 2018 a shortage of "14 nm" fab capacity was announced by Intel.
445:" processes are dimensionally similar to Intel's "10 nm" process.
2537:"Apple's new A9 and A9X processors promise 'desktop-class performance'"
2225:
Hübler, Arved; et al. (2011). "Printed Paper Photovoltaic Cells".
751:
654:
603:
575:
533:
427:
1895:
1852:
1835:. Design for Manufacturability through Design-Process Integration IV.
1773:
Richard, O.; et al. (2007). "Sidewall damage in silica-based low-
3405:
International Technology Roadmap for Semiconductors lithography nodes
3374:
2127:
892:
836:
821:
777:
747:
643:
497:
437:
somewhere between Intel's "14 nm" and "10 nm" processes in
419:
380:
58:
2909:"Intel Now Packs 100 Million Transistors in Each Square Millimeter"
933:
873:
687:
567:
476:
802:
6100 and two cores running at 3.1 GHz, using only 28 watts.
27:
The 12 nm, 14 nm, and 16 nm fabrication nodes are discussed here.
2751:
2627:"GlobalFoundries announces 14nm validation with AMD Zen silicon"
2386:
928:
814:
739:
607:
583:
468:
442:
430:
300:
2645:"NEC releases new high-end HPC product line, SX-Aurora TSUBASA"
2996:"The Samsung Exynos 7420 Deep Dive - Inside A Modern 14nm SoC"
2283:"Intel reveals 14nm PC, declares Moore's Law 'alive and well'"
556:
2961:"Intel's 10nm Cannon Lake and Core i3-8121U Deep Dive Review"
3151:"GLOBALFOUNDRIES 12LP+ FinFET Solution Ready for Production"
2333:"Intel Faces 14nm Shortage As CPU Prices Rise - ExtremeTech"
451:
taped out a "14 nm" chip in 2014, before manufacturing
2895:"7nm vs 10nm vs 14nm: Fabrication Process - Tech Centurion"
2851:"VLSI 2018: GlobalFoundries 12nm Leading-Performance, 12LP"
2708:"VLSI 2018: GlobalFoundries 12nm Leading-Performance, 12LP"
891:
nm" FinFET process from TSMC and was designed for use with
769:
Core M family: Core M-5Y10, Core M-5Y10a, and Core M-5Y70.
527:
A more significant limitation comes from plasma damage to
512:, which is also achievable using current state-of-the-art
839:
technology and Samsung's "14 nm" FinFET technology.
2913:
IEEE Spectrum: Technology, Engineering, and Science News
2132:
IEEE International Electron Devices Meeting (IEDM 2005)
901:
In September 2018, Nvidia released GPUs based on their
2484:"Apple MacBook Pro "Core i7" 3.1 13" Early 2015 Specs"
676:
announced the development of "15 nm" NAND cells.
3176:"Nanotechnology is expected to make transistors even
1586:
1303:
835:
architecture, which incorporates TSMC's "16 nm"
809:, which were erstwhile equipped with "desktop-class"
2583:"Samsung to Optical-Shrink NVIDIA "Pascal" to 14 nm"
570:
announced that it would construct a new $ 5 billion
563:
to develop "14 nm" chip processing technology.
426:
technology that is a non-planar evolution of planar
422:(fin field-effect transistor) technology, a type of
2408:"Samsung Mass Producing 128Gb 3-bit MLC NAND Flash"
404:
International Technology Roadmap for Semiconductors
2174:. Archived from the original on December 13, 2007.
1644:
1572:
2269:"Samsung reveals its first 14nm FinFET test chip"
1993:"Intel shelves cutting-edge Arizona chip factory"
887:processor, introduced in October 2017, used a "16
602:In the late 1990s, Hisamoto's Japanese team from
2671:"Hot Chips 2018: NEC Vector Processor Live Blog"
2297:"Intel postpones Broadwell availability to 4Q14"
1023:
406:(ITRS). Until about 2011, the node following "22
805:On September 25, 2015, Apple Inc. released the
2072:Digest. International Electron Devices Meeting
817:(Taiwan Semiconductor Manufacturing Company).
356:
8:
2154:"Intel scientists find wall for Moore's Law"
2441:"Intel launches first Broadwell processors"
2044:. Symposium on VLSI Technology Short Course
1693:"A Brief History of Process Node Evolution"
1015:
475:nm" FinFET production. The following year,
2036:"FinFET: History, Fundamentals and Future"
1980:Update: Intel to build fab for 14-nm chips
1645:{\displaystyle {\rm {Transistors/mm^{2}}}}
636:Taiwan Semiconductor Manufacturing Company
363:
349:
34:
1634:
1622:
1588:
1587:
1585:
1416:
1312:
1305:
1304:
1302:
559:announced that they were teaming up with
455:NAND flash chips in 2013. The same year,
3360:
3227:"Samsung's 14 nm LPE FinFET transistors"
1918:"Mentor moves tools toward 16-nanometer"
912:
869:, which utilized "16 nm" by TSMC.
508:also limit reliable resolution to about
2130:with elevated source/drain extension".
1669:
1257:
504:. In addition, the chemical effects of
37:
3346:from the original on November 15, 2019
3278:"16 nm lithography process - WikiChip"
3253:"14 nm lithography process - WikiChip"
2177:
2026:
2024:
1033:Transistor density (MTr/mm)
1007:
990:
982:
2936:"Let's Clear Up the Node Naming Mess"
2701:
2699:
2697:
2695:
2693:
2439:Shvets, Anthony (September 7, 2014).
2065:"FinFET scaling to 10 nm gate length"
622:nm process. They later developed a 15
7:
2870:"TSMC Announces 6-Nanometer Process"
2535:Vincent, James (September 9, 2015).
2510:"Intel Core i7-5557U specifications"
1954:"Intel to build fab for 14-nm chips"
3074:"Intel's 14nm Technology in Detail"
2285:. The Register. September 10, 2013.
2200:"16nm SRAM produced – Taiwan Today"
974:
872:On March 2, 2017, AMD released its
379:refers to a marketing term for the
2299:. Digitimes.com. February 12, 2014
2041:University of California, Berkeley
1938:. January 17, 2011. Archived from
1878:. Optical Microlithography XXIII.
1631:
1627:
1619:
1616:
1613:
1610:
1607:
1604:
1601:
1598:
1595:
1592:
1589:
1559:
1556:
1553:
1550:
1544:
1541:
1538:
1535:
1529:
1526:
1523:
1520:
1514:
1511:
1508:
1505:
1499:
1496:
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1490:
1485:
1482:
1479:
1476:
1473:
1467:
1464:
1458:
1455:
1452:
1449:
1443:
1440:
1437:
1434:
1428:
1425:
1422:
1419:
1401:
1398:
1395:
1392:
1386:
1383:
1380:
1377:
1368:
1365:
1362:
1359:
1354:
1351:
1348:
1345:
1342:
1336:
1333:
1324:
1321:
1318:
1315:
25:
2669:Cutress, Ian (August 21, 2018).
2416:. April 11, 2013. Archived from
2202:. taiwantoday.tw. Archived from
1678:"No More Nanometers – EEJournal"
694:laptop that used a "14 nm"
483:nm" scale devices to consumers.
49:
3210:"Intel 14nm Process Technology"
2868:Schor, David (April 16, 2019).
683:taped out a "14 nm" chip.
572:semiconductor fabrication plant
2849:Schor, David (July 22, 2018).
2706:Schor, David (July 22, 2018).
2271:. Engadget. December 21, 2012.
966:
762:class" NAND flash production.
1:
2934:Bohr, Mark (March 28, 2017).
2603:Smith, Ryan (July 28, 2016).
776:, would feature "14 nm"
386:that is the successor to the
2168:"15 Nanometre Memory Tested"
730:began mass-production of "16
459:began mass-production of "16
1920:. EETimes. August 23, 2010.
1806:Microelectronic Engineering
1779:Microelectronic Engineering
1177:Transistor fin height (nm)
1070:Transistor gate pitch (nm)
3421:
3180:and chips correspondingly
2156:. ZDNet. December 1, 2003.
1956:. EE Times. Archived from
1151:Transistor fin width (nm)
1125:Transistor fin pitch (nm)
903:Turing (microarchitecture)
790:released the "Early 2015"
410:nm" was expected to be "16
26:
2321:. Intel. August 11, 2014.
2227:Advanced Energy Materials
2184:: CS1 maint: unfit URL (
2140:10.1109/IEDM.2005.1609488
2080:10.1109/IEDM.2002.1175825
1818:10.1016/j.mee.2007.07.014
1791:10.1016/j.mee.2006.10.058
1297:Intel uses this formula:
1191:
1188:
1185:
1182:
1165:
1162:
1159:
1156:
1139:
1136:
1133:
1130:
1113:
1110:
1107:
1104:
1087:
1081:
1078:
1075:
1050:
1044:
1038:
937:
932:
927:
922:
502:electron beam lithography
1099:Interconnect pitch (nm)
402:nm" was so named by the
3378:manufacturing processes
3188:Encyclopædia Britannica
1218:2013 Q4 risk production
807:iPhone 6S & 6S Plus
2247:10.1002/aenm.201100394
1646:
1574:
566:On February 18, 2011,
377:"14 nanometer process"
32:MOSFET technology node
1744:. September 10, 2016.
1647:
1575:
885:NEC SX-Aurora TSUBASA
774:Galaxy S6 and S6 Edge
514:immersion lithography
2897:. November 26, 2019.
2830:on December 27, 2018
2792:on September 5, 2017
2747:"16/12nm Technology"
2735:. September 4, 2020.
2383:"16/12nm Technology"
2134:. pp. 844–847.
2074:. pp. 251–254.
1942:on January 21, 2011.
1584:
1301:
920:Ground Rules (2015)
712:tri-gate transistors
3231:Electronics EETimes
3190:. December 22, 2017
3020:Frumusanu, Andrei.
2994:Frumusanu, Andrei.
2337:www.extremetech.com
2239:2011AdEnM...1.1018H
1999:. January 14, 2014.
1960:on February 2, 2013
1888:2010SPIE.7640E..0SN
1845:2010SPIE.7641E..09A
1003:14 nm ++
909:14 nm process nodes
861:On August 2, 2016,
858:for dual sourcing.
800:Intel Iris Graphics
686:In September 2013,
681:Samsung Electronics
672:In September 2011,
522:multiple patterning
449:Samsung Electronics
3315:on October 2, 2016
3233:. January 20, 2016
1642:
1570:
876:CPUs based on the
850:GPUs based on the
786:On March 9, 2015,
679:In December 2012,
506:ionizing radiation
479:began shipping "14
439:transistor density
398:nm") node. The "14
3393:
3392:
3383:Succeeded by
3130:www.anandtech.com
3104:www.anandtech.com
3078:www.anandtech.com
3052:www.anandtech.com
3026:www.anandtech.com
3000:www.anandtech.com
2206:on March 20, 2016
2034:(June 11, 2012).
2032:Tsu-Jae King, Liu
1936:IBM Press release
1896:10.1117/12.848194
1853:10.1117/12.846677
1762:. March 12, 2018.
1691:Shukla, Priyank.
1563:
1549:
1534:
1519:
1504:
1472:
1463:
1448:
1433:
1405:
1391:
1376:
1341:
1332:
1254:
1253:
1000:14 nm +
918:ITRS Logic Device
826:GeForce 10 series
424:multi-gate MOSFET
373:
372:
16:(Redirected from
3412:
3364:Preceded by
3361:
3356:
3355:
3353:
3351:
3331:
3325:
3324:
3322:
3320:
3314:
3308:. Archived from
3307:
3299:
3293:
3292:
3290:
3288:
3274:
3268:
3267:
3265:
3263:
3249:
3243:
3242:
3240:
3238:
3223:
3217:
3216:
3214:
3206:
3200:
3199:
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3195:
3172:
3166:
3165:
3163:
3161:
3147:
3141:
3140:
3138:
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3121:
3115:
3114:
3112:
3110:
3095:
3089:
3088:
3086:
3084:
3069:
3063:
3062:
3060:
3058:
3043:
3037:
3036:
3034:
3032:
3017:
3011:
3010:
3008:
3006:
2991:
2985:
2984:
2971:
2965:
2964:
2957:
2951:
2950:
2948:
2946:
2931:
2925:
2924:
2922:
2920:
2915:. March 30, 2017
2905:
2899:
2898:
2891:
2885:
2884:
2882:
2880:
2865:
2859:
2858:
2846:
2840:
2839:
2837:
2835:
2829:
2823:. Archived from
2816:
2808:
2802:
2801:
2799:
2797:
2791:
2785:. Archived from
2778:
2770:
2764:
2763:
2761:
2759:
2743:
2737:
2736:
2729:
2723:
2722:
2720:
2718:
2703:
2688:
2687:
2685:
2683:
2666:
2660:
2659:
2657:
2655:
2641:
2635:
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2623:
2617:
2616:
2614:
2612:
2600:
2594:
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2591:
2589:
2579:
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2570:
2568:
2558:
2552:
2551:
2549:
2547:
2532:
2526:
2525:
2523:
2521:
2506:
2500:
2499:
2497:
2495:
2480:
2474:
2473:
2470:news.samsung.com
2462:
2456:
2455:
2453:
2451:
2436:
2430:
2429:
2427:
2425:
2420:on June 21, 2019
2404:
2398:
2397:
2395:
2393:
2379:
2373:
2372:
2370:
2368:
2359:. Archived from
2351:"History: 2010s"
2347:
2341:
2340:
2329:
2323:
2322:
2315:
2309:
2308:
2306:
2304:
2293:
2287:
2286:
2279:
2273:
2272:
2265:
2259:
2258:
2233:(6): 1018–1022.
2222:
2216:
2215:
2213:
2211:
2196:
2190:
2189:
2183:
2175:
2164:
2158:
2157:
2150:
2144:
2143:
2123:
2117:
2116:
2114:
2112:
2106:
2100:. Archived from
2069:
2060:
2054:
2053:
2051:
2049:
2028:
2019:
2018:
2007:
2001:
2000:
1989:
1983:
1976:
1970:
1969:
1967:
1965:
1950:
1944:
1943:
1928:
1922:
1921:
1914:
1908:
1907:
1871:
1865:
1864:
1828:
1822:
1821:
1801:
1795:
1794:
1770:
1764:
1763:
1752:
1746:
1745:
1734:
1728:
1727:
1714:
1708:
1707:
1705:
1703:
1697:design-reuse.com
1688:
1682:
1681:
1680:. July 23, 2020.
1674:
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1579:
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1568:
1564:
1562:
1547:
1532:
1517:
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1488:
1470:
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1446:
1431:
1417:
1406:
1404:
1389:
1374:
1357:
1339:
1330:
1313:
1295:
1289:
1287:
1278:
1272:
1262:
1203:Production year
1025:
1017:
1009:
992:
984:
976:
968:
913:
895:supercomputers.
890:
759:
750:production, and
745:
733:
722:Shipping devices
698:, and Intel CEO
690:demonstrated an
646:devices down to
640:Tsu-Jae King Liu
625:
621:
598:Technology demos
482:
474:
462:
417:
413:
409:
401:
397:
391:
365:
358:
351:
321:Transistor count
274:
256:
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229:
220:
211:
202:
193:
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175:
166:
121:
112:
103:
94:
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53:
35:
21:
3420:
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3415:
3414:
3413:
3411:
3410:
3409:
3395:
3394:
3384:
3365:
3359:
3349:
3347:
3334:Shilov, Anton.
3333:
3332:
3328:
3318:
3316:
3312:
3305:
3301:
3300:
3296:
3286:
3284:
3282:en.wikichip.org
3276:
3275:
3271:
3261:
3259:
3257:en.wikichip.org
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3149:
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3144:
3134:
3132:
3123:
3122:
3118:
3108:
3106:
3097:
3096:
3092:
3082:
3080:
3071:
3070:
3066:
3056:
3054:
3046:Shilov, Anton.
3045:
3044:
3040:
3030:
3028:
3019:
3018:
3014:
3004:
3002:
2993:
2992:
2988:
2973:
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2867:
2866:
2862:
2848:
2847:
2843:
2833:
2831:
2827:
2820:GlobalFoundries
2814:
2810:
2809:
2805:
2795:
2793:
2789:
2782:GlobalFoundries
2776:
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2757:
2755:
2745:
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2731:
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2726:
2716:
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2691:
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2449:
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2433:
2423:
2421:
2406:
2405:
2401:
2391:
2389:
2381:
2380:
2376:
2366:
2364:
2363:on May 17, 2021
2349:
2348:
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2295:
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2209:
2207:
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2193:
2176:
2166:
2165:
2161:
2152:
2151:
2147:
2125:
2124:
2120:
2110:
2108:
2107:on May 27, 2020
2104:
2090:
2067:
2062:
2061:
2057:
2047:
2045:
2030:
2029:
2022:
2017:. May 17, 2011.
2009:
2008:
2004:
1991:
1990:
1986:
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1961:
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1911:
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1314:
1299:
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1296:
1292:
1285:
1279:
1275:
1269:GlobalFoundries
1263:
1259:
1220:2014 production
1219:
1052:
1018:
1010:
993:
985:
977:
969:
939:GlobalFoundries
919:
911:
888:
856:GlobalFoundries
781:systems on chip
757:
743:
731:
724:
642:, demonstrated
630:, David Kyser,
623:
619:
600:
594:product lines.
553:Mentor Graphics
494:
489:
480:
472:
460:
415:
411:
407:
399:
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389:
384:technology node
369:
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336:Nanoelectronics
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5:
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3357:
3326:
3294:
3269:
3244:
3218:
3201:
3167:
3142:
3124:Howse, Brett.
3116:
3098:Cutress, Ian.
3090:
3064:
3038:
3012:
2986:
2966:
2952:
2940:Intel Newsroom
2926:
2900:
2886:
2860:
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2803:
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2636:
2618:
2595:
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2527:
2501:
2475:
2457:
2431:
2413:Tom's Hardware
2399:
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2191:
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2145:
2118:
2088:
2055:
2020:
2002:
1984:
1971:
1945:
1923:
1909:
1866:
1823:
1812:(2): 401–407.
1796:
1785:(3): 517–523.
1765:
1747:
1729:
1717:Hruska, Joel.
1709:
1683:
1668:
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1460:
1457:
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1436:
1430:
1427:
1424:
1421:
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1409:
1403:
1400:
1397:
1394:
1388:
1385:
1382:
1379:
1373:
1370:
1367:
1364:
1361:
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1353:
1350:
1347:
1344:
1338:
1335:
1329:
1326:
1323:
1320:
1317:
1311:
1308:
1290:
1273:
1265:Second-sourced
1256:
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1251:
1248:
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1227:
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1199:
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1190:
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1077:
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1026:
1020:
1012:
1004:
1001:
998:
995:
987:
979:
971:
963:
960:
957:
954:
953:16/14 nm
951:
947:
946:
941:
936:
931:
926:
921:
916:
910:
907:
842:In June 2016,
723:
720:
700:Brian Krzanich
599:
596:
524:are required.
520:materials and
493:
490:
488:
485:
441:, and TSMC's "
418:nm" nodes use
371:
370:
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353:
345:
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341:
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333:
328:
323:
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156:
150:
144:
138:
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126:
117:
108:
99:
90:
81:
71:
68:
67:
59:MOSFET scaling
55:
54:
46:
45:
31:
24:
14:
13:
10:
9:
6:
4:
3:
2:
3417:
3406:
3403:
3402:
3400:
3389:
3388:
3382:
3380:
3379:
3376:
3372:
3370:
3369:
3363:
3362:
3345:
3341:
3337:
3330:
3327:
3311:
3304:
3298:
3295:
3283:
3279:
3273:
3270:
3258:
3254:
3248:
3245:
3232:
3228:
3222:
3219:
3211:
3205:
3202:
3189:
3185:
3183:
3182:more powerful
3179:
3171:
3168:
3156:
3152:
3146:
3143:
3131:
3127:
3120:
3117:
3105:
3101:
3094:
3091:
3079:
3075:
3072:Smith, Ryan.
3068:
3065:
3053:
3049:
3042:
3039:
3027:
3023:
3016:
3013:
3001:
2997:
2990:
2987:
2982:
2981:
2976:
2970:
2967:
2962:
2956:
2953:
2941:
2937:
2930:
2927:
2914:
2910:
2904:
2901:
2896:
2890:
2887:
2875:
2874:WikiChip Fuse
2871:
2864:
2861:
2856:
2855:WikiChip Fuse
2852:
2845:
2842:
2826:
2822:
2821:
2813:
2807:
2804:
2788:
2784:
2783:
2775:
2774:"PB14LPP-1.0"
2769:
2766:
2754:
2753:
2748:
2742:
2739:
2734:
2728:
2725:
2713:
2712:WikiChip Fuse
2709:
2702:
2700:
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2694:
2690:
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2599:
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2542:
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2476:
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2240:
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2221:
2218:
2205:
2201:
2195:
2192:
2187:
2181:
2173:
2169:
2163:
2160:
2155:
2149:
2146:
2141:
2137:
2133:
2129:
2122:
2119:
2103:
2099:
2095:
2091:
2089:0-7803-7462-2
2085:
2081:
2077:
2073:
2066:
2059:
2056:
2043:
2042:
2037:
2033:
2027:
2025:
2021:
2016:
2012:
2006:
2003:
1998:
1994:
1988:
1985:
1982:
1981:
1975:
1972:
1959:
1955:
1949:
1946:
1941:
1937:
1933:
1927:
1924:
1919:
1913:
1910:
1905:
1901:
1897:
1893:
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1885:
1881:
1877:
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1867:
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1854:
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1815:
1811:
1807:
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1797:
1792:
1788:
1784:
1780:
1776:
1769:
1766:
1761:
1760:eejournal.com
1757:
1751:
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1724:
1720:
1713:
1710:
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1679:
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1635:
1623:
1565:
1413:
1410:
1407:
1371:
1327:
1309:
1306:
1294:
1291:
1283:
1277:
1274:
1270:
1266:
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1246:
1243:
1240:
1237:
1234:
1231:
1228:
1225:
1222:
1217:
1214:
1211:
1208:
1205:
1202:
1201:
1197:
1194:
1179:
1176:
1175:
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1168:
1153:
1150:
1149:
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1142:
1127:
1124:
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1119:
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1101:
1098:
1097:
1093:
1090:
1084:
1072:
1069:
1068:
1064:
1061:
1058:
1055:
1047:
1041:
1035:
1032:
1031:
1027:
1021:
1013:
1005:
1002:
999:
996:
994:(12 nm)
988:
980:
972:
964:
961:
958:
955:
952:
950:Process name
949:
948:
945:
942:
940:
935:
930:
925:
917:
915:
914:
908:
906:
904:
899:
896:
894:
886:
881:
879:
875:
870:
868:
865:released the
864:
859:
857:
853:
849:
848:Radeon RX 400
846:released its
845:
840:
838:
834:
831:based on the
830:
827:
824:released its
823:
820:In May 2016,
818:
816:
812:
808:
803:
801:
797:
793:
789:
784:
782:
779:
775:
770:
768:
763:
761:
753:
749:
741:
737:
729:
721:
719:
716:
713:
708:
703:
701:
697:
696:Broadwell CPU
693:
689:
684:
682:
677:
675:
670:
668:
663:
660:
656:
651:
650:gate length.
649:
645:
641:
637:
633:
629:
628:Jeffrey Bokor
617:
613:
609:
605:
597:
595:
593:
589:
585:
581:
577:
573:
569:
564:
562:
558:
554:
550:
546:
541:
539:
535:
530:
525:
523:
519:
515:
511:
507:
503:
499:
491:
486:
484:
478:
470:
466:
458:
454:
453:"10 nm class"
450:
446:
444:
440:
434:
432:
429:
425:
421:
405:
393:
385:
382:
378:
366:
361:
359:
354:
352:
347:
346:
344:
343:
337:
334:
332:
329:
327:
326:Semiconductor
324:
322:
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314:
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235:
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217:
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133:
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127:
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118:
115:
109:
106:
100:
97:
91:
88:
82:
79:
73:
72:
70:
69:
65:
64:process nodes
60:
57:
56:
52:
48:
47:
44:
39:Semiconductor
36:
30:
19:
18:16 nm process
3385:
3373:
3366:
3350:November 16,
3348:. Retrieved
3339:
3329:
3317:. Retrieved
3310:the original
3297:
3287:February 17,
3285:. Retrieved
3281:
3272:
3262:February 17,
3260:. Retrieved
3256:
3247:
3237:February 17,
3235:. Retrieved
3230:
3221:
3204:
3192:. Retrieved
3187:
3181:
3177:
3170:
3158:. Retrieved
3154:
3145:
3133:. Retrieved
3129:
3119:
3107:. Retrieved
3103:
3093:
3081:. Retrieved
3077:
3067:
3055:. Retrieved
3051:
3041:
3029:. Retrieved
3025:
3015:
3003:. Retrieved
2999:
2989:
2978:
2969:
2955:
2943:. Retrieved
2939:
2929:
2919:November 14,
2917:. Retrieved
2912:
2903:
2889:
2877:. Retrieved
2873:
2863:
2854:
2844:
2834:November 28,
2832:. Retrieved
2825:the original
2818:
2812:"PB12LP-1.1"
2806:
2796:November 28,
2794:. Retrieved
2787:the original
2780:
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2492:. Retrieved
2488:EveryMac.com
2487:
2478:
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2418:the original
2411:
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2303:February 13,
2301:. Retrieved
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2208:. Retrieved
2204:the original
2194:
2172:The Inquirer
2171:
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2131:
2121:
2111:December 10,
2109:. Retrieved
2102:the original
2071:
2058:
2046:. Retrieved
2039:
2014:
2005:
1996:
1987:
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1974:
1964:February 22,
1962:. Retrieved
1958:the original
1948:
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1721:
1712:
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1696:
1686:
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1661:
1657:
1293:
1276:
1260:
1019:(12 nm)
1011:(14 nm)
986:(16 nm)
978:(16 nm)
970:(16 nm)
900:
897:
882:
871:
860:
841:
819:
804:
785:
771:
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614:and various
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495:
447:
435:
433:technology.
414:nm". All "14
376:
374:
278: ~ 2025
260: – 2022
251: – 2020
242: – 2018
233: – 2016
224: – 2014
221:
215: – 2012
206: – 2010
197: – 2009
188: – 2007
179: – 2005
170: – 2003
161: – 2001
155: – 1999
149: – 1996
143: – 1993
137: – 1990
131: – 1987
125: – 1984
116: – 1981
107: – 1977
98: – 1974
89: – 1971
80: – 1968
29:
2975:"SMIC-14nm"
2945:December 6,
2631:ExtremeTech
2607:. Anandtech
1723:ExtremeTech
1288:nm process.
1028:14 nm
796:MacBook Pro
632:Chenming Hu
616:UC Berkeley
612:Chenming Hu
316:Moore's law
159:130 nm
153:180 nm
147:250 nm
141:350 nm
135:600 nm
129:800 nm
114:1.5 μm
43:fabrication
2588:August 13,
2567:August 25,
2546:August 27,
1882:: 76400S.
1876:Proc. SPIE
1839:: 764109.
1833:Proc. SPIE
1665:References
997:14 nm
867:Xbox One S
788:Apple Inc.
736:NAND flash
492:Background
465:NAND flash
310:multi-gate
291:Half-nodes
231:10 nm
222:14 nm
213:22 nm
204:28 nm
195:32 nm
186:45 nm
177:65 nm
168:90 nm
87:10 μm
78:20 μm
3340:AnandTech
3160:August 1,
3135:August 1,
3109:August 1,
3083:August 1,
3057:August 1,
3031:August 1,
3005:August 1,
2676:AnandTech
2654:March 21,
2541:The Verge
2520:March 18,
2514:CPU World
2494:March 18,
2450:March 18,
2445:CPU World
2015:AnandTech
1904:120545900
1414:×
1310:×
1280:Based on
1198:Unknown
1195:Unknown
1172:Unknown
1169:Unknown
1160:Unknown
1146:Unknown
1143:Unknown
1120:Unknown
1117:Unknown
1094:Unknown
1091:Unknown
1062:Unknown
1036:Unknown
863:Microsoft
742:began "16
726:In 2013,
692:Ultrabook
653:In 2005,
471:began "16
443:7 nm
276:2 nm
258:3 nm
249:5 nm
240:7 nm
123:1 μm
105:3 μm
96:6 μm
3399:Category
3344:Archived
3319:April 6,
3194:March 7,
2682:July 15,
2611:July 29,
2424:June 21,
2392:June 30,
2356:SK Hynix
2255:98247321
2180:cite web
1861:56158128
1247:2020 Q3
1215:2018 H2
1192:Unknown
1166:Unknown
1114:Unknown
783:(SoCs).
728:SK Hynix
549:Synopsys
518:Hardmask
457:SK Hynix
331:Industry
3178:smaller
3155:HPCwire
2879:May 31,
2717:May 31,
2367:July 8,
2235:Bibcode
2098:7106946
2048:July 9,
1997:Reuters
1884:Bibcode
1841:Bibcode
1702:July 9,
1282:Samsung
1235:2016 H2
1232:2014 Q3
1226:2016 Q2
1223:2015 Q3
1212:2016 Q1
1209:2014 Q4
924:Samsung
852:Polaris
792:MacBook
767:low-TDP
754:began "
752:Samsung
655:Toshiba
638:), and
604:Hitachi
576:Arizona
545:Samsung
538:leakage
534:silicon
487:History
428:silicon
394:(or "20
296:Density
269:Future
3375:MOSFET
2516:. 2015
2490:. 2015
2253:
2128:FinFET
2096:
2086:
1902:
1859:
1548:
1533:
1518:
1503:
1471:
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1432:
1390:
1375:
1340:
1331:
1286:
1053:44.67
1045:28.88
1042:54.38
962:11LPP
893:NEC SX
889:
837:FinFET
833:Pascal
822:Nvidia
778:Exynos
758:
748:FinFET
744:
732:
707:Core M
669:chip.
644:FinFET
624:
620:
590:, and
580:wafers
498:resist
481:
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467:, and
461:
420:FinFET
416:
412:
408:
400:
396:
390:
381:MOSFET
306:Device
111:
41:device
3387:10 nm
3368:22 nm
3313:(PDF)
3306:(PDF)
3213:(PDF)
2828:(PDF)
2815:(PDF)
2790:(PDF)
2777:(PDF)
2251:S2CID
2105:(PDF)
2094:S2CID
2068:(PDF)
1900:S2CID
1857:S2CID
1284:'s 14
1250:2019
1238:2017
1229:2017
1206:2015
1059:36.71
1056:30.59
1048:33.8
1039:32.94
959:14LPP
956:14LPE
934:Intel
874:Ryzen
688:Intel
674:Hynix
648:10 nm
568:Intel
529:low-k
510:30 nm
477:Intel
3352:2019
3321:2017
3289:2017
3264:2017
3239:2017
3196:2018
3162:2024
3137:2024
3111:2024
3085:2024
3059:2024
3033:2024
3007:2024
2980:SIMC
2947:2018
2921:2018
2881:2019
2836:2022
2798:2022
2760:2022
2752:TSMC
2719:2019
2684:2019
2656:2018
2613:2016
2590:2016
2569:2015
2548:2017
2522:2015
2496:2015
2452:2015
2426:2019
2394:2019
2387:TSMC
2369:2019
2305:2014
2212:2009
2186:link
2113:2019
2084:ISBN
2050:2019
1966:2011
1880:7640
1837:7641
1704:2019
1244:2018
1241:2016
1183:~38
1051:37.5
944:SMIC
929:TSMC
883:The
829:GPUs
815:TSMC
794:and
746:nm"
740:TSMC
734:nm"
667:SRAM
608:TSMC
592:Atom
588:Core
584:Xeon
547:and
469:TSMC
463:nm"
431:CMOS
375:The
301:CMOS
2649:NEC
2243:doi
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1108:70
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