466:. The cost of these techniques adds substantially to the cost of manufacturing sub-wavelength semiconductor products, with the cost increasing exponentially with each advancing technology node. Furthermore, these costs are multiplied by an increasing number of mask layers that must be printed at the minimum pitch, and the reduction in yield from printing so many layers at the cutting edge of the technology. For new integrated-circuit designs, this factors into the costs of prototyping and production.
48:
497:(metal and poly pitch) continue to shrink, thus reducing chip area and chip cost, as well as shortening the distance between transistors, leading to higher-performance devices of greater complexity when compared with earlier nodes. Intel's 65nm process has a transistor density of 2.08 million transistors per square milimeter (MTr/mm2).
492:
papers from Intel in 2002, 2004, and 2005 illustrate the industry trend that the transistor sizes can no longer scale along with the rest of the feature dimensions (gate width only changed from 220 nm to 210 nm going from 90 nm to 65 nm technologies). However, the
1014:
469:
Gate thickness, another important dimension, is reduced to as little as 1.2 nm (Intel). Only a few atoms insulate the "switch" part of the transistor, causing charge to flow through it. This undesired
359:
934:
352:
345:
728:
552:
489:
60:
494:
444:
821:
759:
745:
987:
35:
857:
963:
536:
There are actually two versions of the process: CS200, focusing on high performance, and CS200A, focusing on low power.
459:
458:
are 193 nm and 248 nm. Fabrication of sub-wavelength features requires special imaging technologies, such as
790:
941:
587:
392:
657:
601:
471:
448:
670:
327:
760:"Fujitsu Introduces World-class 65-Nanometer Process Technology for Advanced Server, Mobile Applications"
725:
632:
403:
on a nominally 65 nm process, while the pitch between two lines may be greater than 130 nm.
479:
302:
517:
463:
957:
650:
380:
663:
475:
110:
455:
424:
377:
317:
306:
292:
83:
74:
813:
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526:
513:
454:
While feature sizes may be drawn as 65 nm or less, the wavelengths of light used for
332:
119:
101:
92:
767:
486:
and multiple threshold voltages, to prevent leakage from prohibitively consuming power.
919:
548:
312:
155:
149:
143:
137:
131:
125:
1008:
996:
977:
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412:
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683:
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944:. The Inquirer. September 2, 2005. Archived from the original on November 25, 2005
835:
865:
562:
287:
47:
887:
608:
594:
576:
569:
400:
689:
676:
416:
27:
Advanced lithographic node used in volume CMOS semiconductor fabrication
420:
482:
gate dielectrics must be combined with existing techniques, including
1015:
International
Technology Roadmap for Semiconductors lithography nodes
984:
696:
621:
483:
396:
388:
55:
17:
506:
Gate length: 30 nm (high-performance) to 50 nm (low-power)
766:(Press release). Sunnyvale, CA. September 20, 2005. Archived from
556:
432:
901:
702:
583:
428:
384:
297:
625:
440:
436:
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of 0.543 nm, so such transistors are on the order of 100
746:"Intel's 10nm Cannon Lake and Core i3-8121U Deep Dive Review"
532:
Gate oxide thickness: 1.9 nm (n), 2.1 nm (p)
836:"OMAP 3 family of multimedia applications processors"
542:
Processors using 65 nm manufacturing technology
419:are about 20 nm end-to-end. A crystal of bulk
935:Engineering Sample of the "Yonah" core Pentium M
920:"Intel to cut Prescott leakage by 75% at 65nm"
353:
8:
360:
346:
31:
618:series (starting from Tyler) – 2007-05-07
970:
611:series (starting from Lima) – 2007-02-20
718:
516:layers using nano-clustering silica as
34:
955:
858:"AMD preps 65 nm Turion X2 processors"
451:were also producing 65 nm chips.
942:"AMD's 65 nano silicon ready to roll"
824:from the original on August 13, 2016.
399:lengths) can reach as low as 25
7:
902:"ФГУ ФНЦ НИИСИ РАН: Разработка СБИС"
814:"ソニー、65nm対応の半導体設備を導入。3年間で2,000億円の投資"
501:Example: Fujitsu 65 nm process
25:
856:Gruener, Wolfgang (May 3, 2007).
46:
922:. The Register. August 31, 2004
597:(Cedar Mill cores) – 2006-05-28
937:, IDF Spring 2005, ExtremeTech
789:Kim, Paul (February 7, 2006).
1:
792:65nm CMOS Process Technology
460:optical proximity correction
731:September 27, 2007, at the
431:across. By September 2007,
395:. Printed linewidths (i.e.
1031:
888:"Microprocessor Elbrus-4C"
523:Metal 1 pitch: 180 nm
962:: CS1 maint: unfit URL (
666:Xbox 360 Processor - 2007
572:(Cedar Mill) – 2006-01-16
393:semiconductor fabrication
639:) (updated) – 2007-10-30
509:Core voltage: 1.0 V
988:manufacturing processes
579:900-series – 2006-01-16
478:. The new chemistry of
818:pc.watch.impress.co.jp
708:SRISA 1890VM9Ya – 2016
868:on September 13, 2007
770:on September 27, 2011
726:2006 industry roadmap
518:ultralow κ dielectric
464:phase-shifting masks
845:. 2007. p. 1.
1003:
1002:
993:Succeeded by
843:Texas Instruments
631:Sony/Toshiba/IBM
476:quantum tunneling
370:
369:
16:(Redirected from
1022:
974:Preceded by
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967:
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931:
929:
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864:. Archived from
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705:Elbrus 4C – 2014
673:Family – 2008-02
628:GPU – 2007-10-29
425:lattice constant
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318:Transistor count
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743:
739:
733:Wayback Machine
724:
720:
715:
544:
527:Nickel silicide
514:Cu interconnect
503:
409:
397:transistor gate
383:used in volume
376:is an advanced
366:
337:
333:Nanoelectronics
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269:
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5:
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590:) – 2006-03-14
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484:substrate bias
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65:
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56:MOSFET scaling
52:
51:
43:
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26:
24:
14:
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809:
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801:
798:. DesignCon.
794:
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782:
769:
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761:
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719:
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672:
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665:
661:
659:
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652:
648:
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644:UltraSPARC T2
641:
638:
637:PlayStation 3
634:
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627:
623:
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613:
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596:
592:
589:
585:
581:
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571:
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547:Sony/Toshiba
546:
545:
541:
539:
537:
531:
528:
525:
522:
519:
515:
511:
508:
505:
504:
500:
498:
496:
495:interconnects
491:
487:
485:
481:
477:
474:is caused by
473:
467:
465:
461:
457:
452:
450:
446:
442:
438:
434:
430:
426:
422:
418:
414:
406:
404:
402:
398:
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386:
382:
379:
375:
374:65 nm process
363:
358:
356:
351:
349:
344:
343:
341:
340:
334:
331:
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323:Semiconductor
321:
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304:
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299:
296:
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286:
285:
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274:
268:
267:
264:
263:
256:
250:
247:
241:
238:
232:
229:
223:
220:
214:
211:
205:
202:
196:
193:
187:
184:
178:
175:
169:
166:
160:
157:
154:
151:
148:
145:
142:
139:
136:
133:
130:
127:
124:
121:
115:
112:
106:
103:
97:
94:
88:
85:
79:
76:
70:
69:
67:
66:
62:
61:process nodes
57:
54:
53:
49:
45:
44:
41:
36:Semiconductor
33:
30:
19:
995:
983:
976:
946:. Retrieved
924:. Retrieved
896:
882:
870:. Retrieved
866:the original
861:
851:
842:
830:
817:
808:
799:
791:
784:
772:. Retrieved
768:the original
763:
754:
740:
735:, Table 40a.
721:
684:Turion Ultra
616:Turion 64 X2
604:– 2006-07-27
565:– 2006-01-05
538:
535:
529:source/drain
488:
468:
453:
410:
407:Process node
378:lithographic
373:
371:
275: ~ 2025
257: – 2022
248: – 2020
239: – 2018
230: – 2016
221: – 2014
212: – 2012
203: – 2010
194: – 2009
185: – 2007
176: – 2005
173:
167: – 2003
158: – 2001
152: – 1999
146: – 1996
140: – 1993
134: – 1990
128: – 1987
122: – 1984
113: – 1981
104: – 1977
95: – 1974
86: – 1971
77: – 1968
29:
456:lithography
415:, cellular
313:Moore's law
156:130 nm
150:180 nm
144:250 nm
138:350 nm
132:600 nm
126:800 nm
111:1.5 μm
40:fabrication
997:45 nm
978:90 nm
948:August 25,
926:August 25,
774:August 10,
713:References
563:Intel Core
413:comparison
307:multi-gate
288:Half-nodes
228:10 nm
219:14 nm
210:22 nm
201:28 nm
192:32 nm
183:45 nm
174:65 nm
165:90 nm
84:10 μm
75:20 μm
958:cite news
686:– 2008-06
679:– 2008-05
646:– 2007–10
609:Athlon 64
595:Celeron D
577:Pentium D
570:Pentium 4
449:Chartered
417:ribosomes
273:2 nm
255:3 nm
246:5 nm
237:7 nm
120:1 μm
102:3 μm
93:6 μm
1009:Category
872:March 4,
862:TG Daily
822:Archived
729:Archived
697:Expeed 2
690:Loongson
677:VIA Nano
624:GeForce
588:Sossaman
559:) - 2005
520:(κ=2.25)
328:Industry
913:Sources
800:Fujitsu
764:Fujitsu
472:leakage
421:silicon
293:Density
266:Future
985:MOSFET
699:– 2010
695:Nikon
692:– 2009
671:OMAP 3
664:"Loki"
656:IBM's
653:series
651:Phenom
626:8800GT
622:NVIDIA
602:Core 2
600:Intel
593:Intel
582:Intel
575:Intel
568:Intel
480:high-κ
423:has a
389:MOSFET
303:Device
108:
38:device
839:(PDF)
796:(PDF)
557:PStwo
433:Intel
429:atoms
18:65 nm
964:link
950:2007
928:2007
874:2008
776:2008
703:MCST
682:AMD
662:IBM
649:AMD
642:Sun
633:Cell
614:AMD
607:AMD
584:Xeon
490:IEDM
462:and
447:and
411:For
385:CMOS
381:node
372:The
298:CMOS
669:TI
658:z10
512:11
445:UMC
441:IBM
437:AMD
1011::
960:}}
956:{{
860:.
841:.
820:.
816:.
762:.
553:GS
549:EE
443:,
439:,
435:,
401:nm
391:)
270:00
252:00
243:00
234:00
117:00
99:00
90:00
966:)
952:.
930:.
904:.
890:.
876:.
802:.
778:.
748:.
635:(
586:(
555:(
551:+
387:(
361:e
354:t
347:v
309:)
305:(
225:0
216:0
207:0
198:0
189:0
180:0
171:0
162:0
81:0
72:0
63:)
59:(
20:)
Text is available under the Creative Commons Attribution-ShareAlike License. Additional terms may apply.
