873:(meaning the electrons can travel freely from one electrode to the other), nanowire conductivity is strongly influenced by edge effects. The edge effects come from atoms that lay at the nanowire surface and are not fully bonded to neighboring atoms like the atoms within the bulk of the nanowire. The unbonded atoms are often a source of defects within the nanowire, and may cause the nanowire to conduct electricity more poorly than the bulk material. As a nanowire shrinks in size, the surface atoms become more numerous compared to the atoms within the nanowire, and edge effects become more important.
563:
1500:
biological species to the surface of the sensor can lead to the depletion or accumulation of charge carriers in the "bulk" of the nanometer diameter nanowire i.e. (small cross section available for conduction channels). Moreover, the wire, which serves as a tunable conducting channel, is in close contact with the sensing environment of the target, leading to a short response time, along with orders of magnitude increase in the sensitivity of the device as a result of the huge S/V ratio of the nanowires.
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1522:(SiNW) sensing devices include the ultra sensitive, real-time sensing of biomarker proteins for cancer, detection of single virus particles, and the detection of nitro-aromatic explosive materials such as 2,4,6-tri-nitrotoluene (TNT) in sensitives superior to these of canines. Silicon nanowires could also be used in their twisted form, as electromechanical devices, to measure intermolecular forces with great precision.
1009:(AFM), and associated technologies which have enabled direct study of the response of the nanowire to an applied load. Specifically, a nanowire can be clamped from one end, and the free end displaced by an AFM tip. In this cantilever geometry, the height of the AFM is precisely known, and the force applied is precisely known. This allows for construction of a force vs. displacement curve, which can be converted to a
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67:
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880:, each having a different electronic wavefunction normal to the wire. The thinner the wire is, the smaller the number of channels available to the transport of electrons. As a result, wires that are only one or a few atoms wide exhibit quantization of the conductance: i.e. the conductance can assume only discrete values that are multiples of the
1463:
circuit when using the conventional and manual pick-and-place approach, leading to a very limited throughput. Recent developments in the nanowire synthesis methods now allow for parallel production of single nanowire devices with useful applications in electrochemistry, photonics, and gas- and biosensing.
978:. Nanowire welds were also demonstrated between gold and silver, and silver nanowires (with diameters ≈ 5–15 nm) at near room temperature, indicating that this technique may be generally applicable for ultrathin metallic nanowires. Combined with other nano- and microfabrication technologies,
865:
Several physical reasons predict that the conductivity of a nanowire will be much less than that of the corresponding bulk material. First, there is scattering from the wire boundaries, whose effect will be very significant whenever the wire width is below the free electron mean free path of the bulk
682:
The source enters these nanoclusters and begins to saturate them. On reaching supersaturation, the source solidifies and grows outward from the nanocluster. Simply turning off the source can adjust the final length of the nanowire. Switching sources while still in the growth phase can create compound
1325:
in the solid. Without dislocation motion, a 'dislocation-starvation' mechanism is in operation. The material can accordingly experience huge stresses before dislocation motion is possible, and then begins to strain-harden. For these reasons, nanowires (historically described as 'whiskers') have been
1316:
where the volume of the solid is reduced. As a nanowire is shrunk to a single line of atoms, the strength should theoretically increase all the way to the molecular tensile strength. Gold nanowires have been described as 'ultrahigh strength' due to the extreme increase in yield strength, approaching
769:
The vast majority of nanowire-formation mechanisms are explained through the use of catalytic nanoparticles, which drive the nanowire growth and are either added intentionally or generated during the growth. However, nanowires can be also grown without the help of catalysts, which gives an advantage
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results in degradation of the precursor, allowing release of Si or Ge, and dissolution into the metal nanocrystals. As more of the semiconductor solute is added from the supercritical phase (due to a concentration gradient), a solid crystallite precipitates, and a nanowire grows uniaxially from the
1539:
must be carefully selected for nanowire FET measurements. One approach of overcoming this limitation employs fragmentation of the antibody-capturing units and control over surface receptor density, allowing more intimate binding to the nanowire of the target protein. This approach proved useful for
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with potential as optical interconnects and optical data communication on chip. Nanowire lasers are built from III–V semiconductor heterostructures, the high refractive index allows for low optical loss in the nanowire core. Nanowire lasers are subwavelength lasers of only a few hundred nanometers.
830:
An emerging field is to use DNA strands as scaffolds for metallic nanowire synthesis. This method is investigated both for the synthesis of metallic nanowires in electronic components and for biosensing applications, in which they allow the transduction of a DNA strand into a metallic nanowire that
1495:
In an analogous way to FET devices in which the modulation of conductance (flow of electrons/holes) in the semiconductor, between the input (source) and the output (drain) terminals, is controlled by electrostatic potential variation (gate-electrode) of the charge carriers in the device conduction
839:
A simple method to produce nanowires with defined geometries has been recently reported using conventional optical lithography. In this approach, optical lithography is used to generate nanogaps using controlled crack formation. These nanogaps are then used as shadow mask for generating individual
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Due to their one-dimensional structure with unusual optical properties, the nanowire are of interest for photovoltaic devices. Compared with its bulk counterparts, the nanowire solar cells are less sensitive to impurities due to bulk recombination, and thus silicon wafers with lower purity can be
1299:
In contrast, Si solid nanowires have been studied, and shown to have a decreasing modulus with diameter The authors of that work report a Si modulus which is half that of the bulk value, and they suggest that the density of point defects, and or loss of chemical stoichiometry may account for this
973:
measurements reveal that the welds are nearly perfect, with the same crystal orientation, strength and electrical conductivity as the rest of the nanowire. The high quality of the welds is attributed to the nanoscale sample dimensions, oriented-attachment mechanisms and mechanically assisted fast
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Similar to VLS synthesis, VSS (vapor-solid-solid) synthesis of nanowires (NWs) proceeds through thermolytic decomposition of a silicon precursor (typically phenylsilane). Unlike VLS, the catalytic seed remains in solid state when subjected to high temperature annealing of the substrate. This such
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The high aspect ratio of nanowires makes this nanostructures suitable for electrochemical sensing with the potential for ultimate sensitivity. One of the challenge for the use of nanowires in commercial products is related to the isolation, handling, and integration of nanowires in an electrical
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is shrinking smaller and smaller into nanoscale. One of the key challenges of building future nanoscale MOS transistors is ensuring good gate control over the channel. In general, having a wider gate relative to the total transistor length affords greater gate control. Therefore, the high aspect
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corn-like nanowires were first prepared by a surface modification concept using surface tension stress mechanism through a two consecutive hydrothermal operation, and showed an increase of 12% in dye-sensitized solar cell efficiency the light scattering layer. CdSe corn-like nanowires grown by
1295:
was applied to study the modulus of silver nanowires, and again the modulus was found to be 88 GPa, very similar to the modulus of bulk Silver (85 GPa) These works demonstrated that the analytically determined modulus dependence seems to be suppressed in nanowire samples where the crystalline
960:
For nanowires with diameters less than 10 nm, existing welding techniques, which require precise control of the heating mechanism and which may introduce the possibility of damage, will not be practical. Recently scientists discovered that single-crystalline ultrathin gold nanowires with
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Generally, the charges on dissolved molecules and macromolecules are screened by dissolved counterions, since in most cases molecules bound to the devices are separated from the sensor surface by approximately 2–12 nm (the size of the receptor proteins or DNA linkers bound to the sensor
1499:
This change in the surface potential influences the Chem-FET device exactly as a 'gate' voltage does, leading to a detectable and measurable change in the device conduction. When these devices are fabricated using semiconductor nanowires as the transistor element the binding of a chemical or
922:). This quantization has been observed by measuring the conductance of a nanowire suspended between two electrodes while pulling it progressively longer: as its diameter reduces, its conductivity decreases in a stepwise fashion and the plateaus correspond approximately to multiples of
553:
There are many applications where nanowires may become important in electronic, opto-electronic and nanoelectromechanical devices, as additives in advanced composites, for metallic interconnects in nanoscale quantum devices, as field-emitters and as leads for biomolecular nanosensors.
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The main advantages of this method include a significant reduction of sample preparation time (quick welding and cutting of nanowire at low beam current), and minimization of stress-induced bending, Pt contamination, and ion beam damage. This technique is particularly suitable for
652:(VLS), which was first reported by Wagner and Ellis in 1964 for silicon whiskers with diameters ranging from hundreds of nm to hundreds of μm. This process can produce high-quality crystalline nanowires of many semiconductor materials, for example, VLS–grown single crystalline
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Typical nanowires exhibit aspect ratios (length-to-width ratio) of 1000 or more. As such they are often referred to as one-dimensional (1-D) materials. Nanowires have many interesting properties that are not seen in bulk or 3-D (three-dimensional) materials. This is because
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The elastic component of the stress-strain curve described by the Young's
Modulus, has been reported for nanowires, however the modulus depends very strongly on the microstructure. Thus a complete description of the modulus dependence on diameter is lacking. Analytically,
735:
The supercritical fluid-liquid-solid growth method can be used to synthesize semiconductor nanowires, e.g., Si and Ge. By using metal nanocrystals as seeds, Si and Ge organometallic precursors are fed into a reactor filled with a supercritical organic solvent, such as
727:
Solution-phase synthesis refers to techniques that grow nanowires in solution. They can produce nanowires of many types of materials. Solution-phase synthesis has the advantage that it can produce very large quantities, compared to other methods. In one technique, the
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Conducting nanowires offer the possibility of connecting molecular-scale entities in a molecular computer. Dispersions of conducting nanowires in different polymers are being investigated for use as transparent electrodes for flexible flat-screen displays.
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It is possible that semiconductor nanowire crossings will be important to the future of digital computing. Though there are other uses for nanowires beyond these, the only ones that actually take advantage of physics in the nanometer regime are electronic.
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Nanowire lasers are Fabry–Perot resonator cavities defined by the end facets of the wire with high-reflectivity, recent developments have demonstrated repetition rates greater than 200 GHz offering possibilities for optical chip level communications.
866:
material. In copper, for example, the mean free path is 40 nm. Copper nanowires less than 40 nm wide will shorten the mean free path to the wire width. Silver nanowires have very different electrical and thermal conductivity from bulk silver.
4625:
Elnathan, Roey; Kwiat, M.; Pevzner, A.; Engel, Y.; Burstein, L.; Khatchtourints, A.; Lichtenstein, A.; Kantaev, R.; Patolsky, F. (10 September 2012). "Biorecognition Layer
Engineering: Overcoming Screening Limitations of Nanowire-Based FET Devices".
812:) substrates which are covered with a sub-monolayer of a rare earth metal and subsequently annealed. The lateral dimensions of the nanowires confine the electrons in such a way that the system resembles a (quasi-)one-dimensional metal. Metallic RESi
1444:, their use in mechanically enhancing composites is being investigated. Because nanowires appear in bundles, they may be used as tribological additives to improve friction characteristics and reliability of electronic transducers and actuators.
932:
The quantization of conductivity is more pronounced in semiconductors like Si or GaAs than in metals, because of their lower electron density and lower effective mass. It can be observed in 25 nm wide silicon fins, and results in increased
1326:
used extensively in composites for increasing the overall strength of a material. Moreover, nanowires continue to be actively studied, with research aiming to translate enhanced mechanical properties to novel devices in the fields of
1496:
channel, the methodology of a Bio/Chem-FET is based on the detection of the local change in charge density, or so-called "field effect", that characterizes the recognition event between a target molecule and the surface receptor.
1287:
is the diameter. This equation implies that the modulus increases as the diameter decreases. However, various computational methods such as molecular dynamics have predicted that modulus should decrease as diameter decreases.
1707:
Carter, Robin; Suyetin, Mikhail; Lister, Samantha; Dyson, M. Adam; Trewhitt, Harrison; Goel, Sanam; Liu, Zheng; Suenaga, Kazu; Giusca, Cristina; Kashtiban, Reza J.; Hutchison, John L.; Dore, John C.; Bell, Gavin R.;
2525:
Rackauskas, S.; Nasibulin, A. G.; Jiang, H.; Tian, Y.; Kleshch, V. I.; Sainio, J.; Obraztsova, E. D.; Bokova, S. N.; Obraztsov, A. N.; Kauppinen, E. I. (2010). "A Novel Method for Metal Oxide
Nanowire Synthesis".
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Teschome, Bezu; Facsko, Stefan; Schönherr, Tommy; Kerbusch, Jochen; Keller, Adrian; Erbe, Artur (2016). "Temperature-Dependent Charge
Transport through Individually Contacted DNA Origami-Based Au Nanowires".
1754:
1351:
Atomistic simulation result for formation of inversion channel (electron density) and attainment of threshold voltage (IV) in a nanowire MOSFET. Note that the threshold voltage for this device lies around
602:, often involving a form of self-limiting oxidation, to fine tune the size and aspect ratio of the structures. After the bottom-up synthesis, nanowires can be integrated using pick-and-place techniques.
831:
can be electrically detected. Typically, ssDNA strands are stretched, whereafter they are decorated with metallic nanoparticles that have been functionalised with short complementary ssDNA strands.
457:
2398:
Gustafsson, L.; Jansson, R.; Hedhammar, M.; van der
Wijngaart, W. (2018). "Structuring of Functional Spider Silk Wires, Coatings, and Sheets by Self-Assembly on Superhydrophobic Pillar Surfaces".
1535:
surface). As a result of the screening, the electrostatic potential that arises from charges on the analyte molecule decays exponentially toward zero with distance. Thus, for optimal sensing, the
840:
nanowires with precise lengths and widths. This technique allows to produce individual nanowires below 20 nm in width in a scalable way out of several metallic and metal oxide materials.
683:
nanowires with super-lattices of alternating materials. For example, a method termed ENGRAVE (Encoded
Nanowire GRowth and Appearance through VLS and Etching) developed by the Cahoon Lab at
1451:
manipulation, which offers a low-cost, bottom-up approach to integrating suspended dielectric metal oxide nanowires in electronic devices such as UV, water vapor, and ethanol sensors.
542:), which can have a diameter of 0.9 nm and be hundreds of micrometers long. Other important examples are based on semiconductors such as InP, Si, GaN, etc., dielectrics (e.g. SiO
3975:
Mongillo, Massimo; Spathis, Panayotis; Katsaros, Georgios; Gentile, Pascal; De
Franceschi, Silvano (2012). "Multifunctional Devices and Logic Gates with Undoped Silicon Nanowires".
2757:
Rackauskas, S.; Jiang, H.; Wagner, J. B.; Shandakov, S. D.; Hansen, T. W.; Kauppinen, E. I.; Nasibulin, A. G. (2014). "In Situ Study of
Noncatalytic Metal Oxide Nanowire Growth".
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diameters ≈ 3–10 nm can be "cold-welded" together within seconds by mechanical contact alone, and under remarkably low applied pressures (unlike macro- and micro-scale
3026:
Rakitin, A; Aich, P; Papadopoulos, C; Kobzar, Yu; Vedeneev, A. S; Lee, J. S; Xu, J. M (2001). "Metallic
Conduction through Engineered DNA: DNA Nanoelectronic Building Blocks".
396:. Such discrete values arise from a quantum mechanical constraint on the number electronic transport channels at the nanometer scale, and they are often approximately equal to
1407:
from undoped silicon nanowires. This avoids the problem of how to achieve precision doping of complementary nanocircuits, which is unsolved. They were able to control the
272:
with the diameter of the order of a nanometre (10 m). More generally, nanowires can be defined as structures that have a thickness or diameter constrained to tens of
3296:
Yanson, A. I.; Bollinger, G. Rubio; van den Brom, H. E.; Agraït, N.; van
Ruitenbeek, J. M. (1998). "Formation and manipulation of a metallic wire of single gold atoms".
869:
Nanowires also show other peculiar electrical properties due to their size. Unlike single wall carbon nanotubes, whose motion of electrons can fall under the regime of
1997:
1933:
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type of synthesis is widely used to synthesise metal silicide/germanide nanowires through VSS alloying between a copper substrate and a silicon/germanium precursor.
1240:
1213:
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synthesis, ethylene glycol is both solvent and reducing agent. This technique is particularly versatile at producing nanowires of gold, lead, platinum, and silver.
1265:
4747:
Gubur, H. M.; Septekin, F.; Alpdogan, S.; Sahan, B.; Zeyrek, B. K. (2016). "Structural properties of CdSe corn-like nanowires grown by chemical bath deposition".
1868:
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Gustafsson, L.; Kvick, M.; Åstrand, C.; Ponsteen, N.; Dorka, N.; Hegrová, V.; Svanberg, S.; Horák, J.; Jansson, R.; Hedhammar, M.; van der Wijngaart, W. (2023).
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Appelfeller, Stephan; Holtgrewe, Kris; Franz, Martin; Freter, Lars; Hassenstein, Christian; Jirschik, Hans-Ferdinand; Sanna, Simone; Dähne, Mario (2020-09-24).
1285:
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Stress-strain curve provides all the relevant mechanical properties including; tensile modulus, yield strength, ultimate tensile strength, and fracture strength
4669:
Gorji, Saleh; Kashiwar, Ankush; Mantha, Lakshmi S; Kruk, Robert; Witte, Ralf; Marek, Peter; Hahn, Horst; Kübel, Christian; Scherer, Torsten (December 2020).
2328:
Heitsch, Andrew T.; Akhavan, Vahid A.; Korgel, Brian A. (2011). "Rapid SFLS Synthesis of Si Nanowires Using Trisilane with in situ Alkyl-Amine Passivation".
770:
of pure nanowires and minimizes the number of technological steps. The mechanisms for catalyst-free growth of nanowires (or whiskers) were known from 1950s.
684:
822:) as well. This system permits tuning the dimensionality between two-dimensional and one-dimensional by the coverage and the tilt angle of the substrate.
1515:, ZnO, etc.) have been used for the preparation of nanowires, Si is usually the material of choice when fabricating nanowire FET-based chemo/biosensors.
3069:
Ongaro, A; Griffin, F; Nagle, L; Iacopino, D; Eritja, R; Fitzmaurice, D (2004). "DNA-Templated Assembly of a Protein-Functionalized Nanogap Electrode".
2054:
Ali, Utku Emre; Yang, He; Khayrudinov, Vladislav; Modi, Gaurav; Cheng, Zengguang; Agarwal, Ritesh; Lipsanen, Harri; Bhaskaran, Harish (September 2022).
2258:
Yin, Xi; Wu, Jianbo; Li, Panpan; Shi, Miao; Yang, Hong (January 2016). "Self-Heating Approach to the Fast Production of Uniform Metal Nanostructures".
1592:
Corn-like nanowire is a one-dimensional nanowire with interconnected nanoparticles on the surface, providing a large percentage of reactive facets. TiO
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confined laterally and thus occupy energy levels that are different from the traditional continuum of energy levels or bands found in bulk materials.
247:
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Hanrath, T.; Korgel, B.A. (2003). "Supercritical Fluid–Liquid–Solid (SFLS) Synthesis of Si and Ge Nanowires Seeded by Colloidal Metal Nanocrystals".
46:
33:
610:
1714:"Band gap expansion, shear inversion phase change behaviour and low-voltage induced crystal oscillation in low-dimensional tin selenide crystals"
2285:
Holmes, J. D.; Johnston, K. P.; Doty, R. C.; Korgel, B. A. (2000). "Control of thickness and orientation of solution-grown silicon nanowires".
625:
A suspended nanowire is a wire produced in a high-vacuum chamber held at the longitudinal extremities. Suspended nanowires can be produced by:
4716:
Bakhshayesh, A. M.; Mohammadi, M. R.; Dadar, H.; Fray, D. J. (2013). "Improved efficiency of dye-sensitized solar cells aided by corn-like TiO
3349:
Rodrigues, Varlei; Fuhrer, Tobias; Ugarte, Daniel (2000-11-06). "Signature of Atomic Structure in the Quantum Conductance of Gold Nanowires".
2655:
Morin, S. A.; Bierman, M. J.; Tong, J.; Jin, S. (2010). "Mechanism and Kinetics of Spontaneous Nanotube Growth Driven by Screw Dislocations".
4515:
3392:
Tilke, A. T.; Simmel, F. C.; Lorenz, H.; Blick, R. H.; Kotthaus, J. P. (2003). "Quantum interference in a one-dimensional silicon nanowire".
941:
with such nanoscale silicon fins, when used in digital applications, will need a higher gate (control) voltage to switch the transistor on.
4958:
3784:
Wang, Zhong Lin; Dai, Zu Rong; Gao, Ruiping; Gole, James L. (2002-03-27). "Measuring the Young's modulus of solid nanowires byin situTEM".
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with smooth surfaces could have excellent properties, such as ultra-large elasticity. This method uses a source material from either laser
173:
1820:"Raman Spectroscopy of Optical Transitions and Vibrational Energies of ≈1 nm HgTe Extreme Nanowires within Single Walled Carbon Nanotubes"
949:
To incorporate nanowire technology into industrial applications, researchers in 2008 developed a method of welding nanowires together: a
753:
Protein nanowires in spider silk have been formed by rolling a droplet of spider silk solution over a superhydrophobic pillar structure.
4241:
Coradini, Diego S. R.; Tunes, Matheus A.; Kremmer, Thomas M.; Schön, Claudio G.; Uggowitzer, Peter J.; Pogatscher, Stefan (2020-11-05).
1818:
Spencer, Joseph; Nesbitt, John; Trewhitt, Harrison; Kashtiban, Reza; Bell, Gavin; Ivanov, Victor; Faulques, Eric; Smith, David (2014).
605:
Nanowire production uses several common laboratory techniques, including suspension, electrochemical deposition, vapor deposition, and
649:
613:
enables growing homogeneous and segmented nanowires down to 8 nm diameter. As nanowire oxidation rate is controlled by diameter,
606:
5048:
3878:
2706:
Bierman, M. J.; Lau, Y. K. A.; Kvit, A. V; Schmitt, A. L.; Jin, S. (2008). "Dislocation-Driven Nanowire Growth and Eshelby Twist".
372:
extreme nanowire embedded down the central pore of a SWCNT. The image is also accompanied by a simulation of the crystal structure
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966:
794:
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The simplest methods to obtain metal oxide nanowires use ordinary heating of the metals, e.g. metal wire heated with battery, by
168:
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Experimentally, gold nanowires have been shown to have a Young's modulus which is effectively diameter independent. Similarly,
793:
were demonstrated. The picture on the right shows a single atomic layer growth on the tip of CuO nanowire, observed by in situ
4902:
One atom thick, hundreds of nanometers long Pt-nanowires are one of the best examples of self-assembly. (University of Twente)
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4982:
1327:
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Garcia, J. C.; Justo, J. F. (2014). "Twisted ultrathin silicon nanowires: A possible torsion electromechanical nanodevice".
410:
2612:
Burton, W. K.; Cabrera, N.; Frank, F. C. (1951). "The Growth of Crystals and the Equilibrium Structure of Their Surfaces".
1889:
Shkondin, E.; Takayama, O., Aryaee Panah, M. E.; Liu, P., Larsen, P. V.; Mar, M. D., Jensen, F.; Lavrinenko, A. V. (2017).
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Original article on the Quantum Hall Effect: K. v. Klitzing, G. Dorda, and M. Pepper; Phys. Rev. Lett. 45, 494–497 (1980).
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Wu, Bin; Heidelberg, Andreas; Boland, John J. (2005-06-05). "Mechanical properties of ultrahigh-strength gold nanowires".
1388:. By connecting several p-n junctions together, researchers have been able to create the basis of all logic circuits: the
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636:
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Christesen, Joseph D.; Pinion, Christopher W.; Grumstrup, Erik M.; Papanikolas, John M.; Cahoon, James F. (2013-12-11).
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858:
567:
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Li, Xiaodong; Gao, Hongsheng; Murphy, Catherine J.; Caswell, K. K. (Nov 2003). "Nanoindentation of Silver Nanowires".
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1312:. The strength of a material is increased by decreasing the number of defects in the solid, which occurs naturally in
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284:
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or less and an unconstrained length. At these scales, quantum mechanical effects are important—which coined the term "
105:
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1949:"Fabrication of hollow coaxial Al2O3/ZnAl2O4 high aspect ratio freestanding nanotubes based on the Kirkendall effect"
957:); then an electric current is applied, which fuses the wire ends. The technique fuses wires as small as 10 nm.
598:. Most synthesis techniques use a bottom-up approach. Initial synthesis via either method may often be followed by a
2904:"Continuous crossover from two-dimensional to one-dimensional electronic properties for metallic silicide nanowires"
1454:
Due to their large surface-to-volume ratio, physico-chemical reactions are facilitated on the surface of nanowires.
3446:
Lu, Yang; Huang, Jian Yu; Wang, Chao; Sun, Shouheng; Lou, Jun (2010). "Cold welding of ultrathin gold nanowires".
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The plastic component of the stress strain curve (or more accurately the onset of plasticity) is described by the
38:
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1426:/quantum effect well photon logic arrays. Photons travel inside the tube, electrons travel on the outside shell.
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in air can be easily done at home. Spontaneous nanowire formation by non-catalytic methods were explained by the
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Vizcaíno, J. L. P.; Núñez, C. G. A. (2013). "Fast, effective manipulation of nanowires for electronic devices".
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Koblmüller, Gregor; et al. (2017). "GaAs–AlGaAs core–shell nanowire lasers on silicon: invited review".
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curve if the nanowire dimensions are known. From the stress-strain curve, the elastic constant known as the
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Penn Engineers Design Electronic Computer Memory in Nanoscale Form That Retrieves Data 1,000 Times Faster.
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In addition, nanowires are also being studied for use as photon ballistic waveguides as interconnects in
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1991:
1927:
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463:
1819:
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Engel, Yoni; Elnathan, Roey; Pevzner, Alexander; Davidi, Guy; Flaxer, Eli; Patolsky, Fernando (2010).
4423:"Long-term mutual phase locking of picosecond pulse pairs generated by a semiconductor nanowire laser"
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is the thickness of a shell layer in which the modulus is surface dependent and varies from the bulk,
800:
Atomic-scale nanowires can also form completely self-organised without need for defects. For example,
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A single-step vapour phase reaction at elevated temperature synthesises inorganic nanowires such as Mo
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Yu, Peng; Wu, Jiang; Liu, Shenting; Xiong, Jie; Jagadish, Chennupati; Wang, Zhiming M. (2016-12-01).
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Grange, R.; Choi, J.W.; Hsieh, C.L.; Pu, Y.; Magrez, A.; Smajda, R.; Forro, L.; Psaltis, D. (2009).
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3927:"Comparison of the device physics principles of planar and radial p-n junction nanorod solar cells"
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582:. A top-down approach reduces a large piece of material to small pieces, by various means such as
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2559:
2480:
2431:
2380:
2091:
2024:
1979:
1800:
1368:
are used widely as fundamental building elements in today's electronic circuits. As predicted by
801:
503:
223:
4088:
2847:
Holtgrewe, Kris; Appelfeller, Stephan; Franz, Martin; Dähne, Mario; Sanna, Simone (2019-06-10).
1948:
1014:
953:
nanowire is placed adjacent to the ends of the pieces to be joined (using the manipulators of a
3117:"Scalable Manufacturing of Single Nanowire Devices Using Crack-Defined Shadow Mask Lithography"
667:
VLS synthesis requires a catalyst. For nanowires, the best catalysts are liquid metal (such as
5234:
5213:
4891:
4839:
4690:
4651:
4554:
4511:
4470:
4403:
4386:
Mayer, B.; et al. (2015). "Monolithically integrated high-β nanowire lasers on silicon".
4274:
4010:
3957:
3874:
3864:
3801:
3766:
3715:
3707:
3661:
3597:
3521:
3471:
3374:
3331:
3278:
3260:
3195:
3148:
3051:
3008:
2931:
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2829:
2782:
2731:
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2551:
2472:
2423:
2310:
2240:
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2183:
2083:
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1842:
1792:
1735:
1644:
1448:
1441:
975:
950:
934:
905:
786:
614:
591:
2109:
Wagner, R. S.; Ellis, W. C. (1964). "Vapor-liquid-solid mechanism of single crystal growth".
2055:
1049:
5157:
4829:
4819:
4756:
4729:
4682:
4643:
4599:
4544:
4503:
4460:
4452:
4395:
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4317:
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4254:
4215:
4188:
4111:
4061:
4002:
3949:
3907:
3793:
3758:
3699:
3651:
3643:
3587:
3579:
3571:
3513:
3490:
3463:
3409:
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3323:
3268:
3252:
3187:
3138:
3128:
3086:
3043:
3000:
2970:
2923:
2868:
2821:
2774:
2723:
2672:
2629:
2586:
2543:
2507:
2462:
2415:
2372:
2337:
2302:
2267:
2222:
2173:
2165:
2126:
2067:
2034:
1971:
1913:
1891:"Large-scale high aspect ratio Al-doped ZnO nanopillars arrays as anisotropic metamaterials"
1834:
1782:
1774:
1725:
1682:
1672:
1573:
1569:
1527:
1519:
1408:
1022:
653:
599:
579:
575:
323:
308:
304:
163:
2013:"Two-dimensional modeling of the self-limiting oxidation in silicon and tungsten nanowires"
1613:
photocatalysts induced by magnetic dipole interactions have been also reported previously.
1218:
1191:
5106:
5093:
5031:
4881:
4497:
3926:
3167:
1503:
While several inorganic semiconducting materials such as Si, Ge, and metal oxides (e.g. In
1479:
1292:
1245:
913:
316:
312:
143:
90:
75:
2547:
1381:
used to achieve acceptable efficiency, leading to the reduction on material consumption.
4815:
4639:
4595:
4448:
4356:
4313:
4184:
4107:
4057:
3998:
3945:
3754:
3695:
3567:
3509:
3459:
3405:
3362:
3319:
3248:
3183:
3082:
3039:
2919:
2864:
2817:
2770:
2719:
2668:
2625:
2539:
2411:
2368:
2298:
2218:
2161:
2122:
1967:
1909:
1770:
5201:
4995:
4937:
4834:
4783:
4465:
4422:
3797:
3656:
3631:
3592:
3273:
3223:"Temperature Dependence of Electrical and Thermal Conduction in Single Silver Nanowire"
3222:
3143:
3116:
2903:
2849:"Structure and one-dimensional metallicity of rare-earth silicide nanowires on Si(001)"
2178:
2145:
1657:
1630:
1541:
1429:
When two nanowires acting as photon waveguides cross each other the juncture acts as a
1369:
1365:
1270:
158:
115:
4115:
2848:
808:) nanowires of few nm width and height and several 100 nm length form on silicon(
5228:
5015:
4768:
4702:
4670:
4611:
4286:
4227:
3207:
2943:
2888:
2641:
2511:
2484:
2435:
2384:
2095:
2012:
1983:
1804:
1313:
790:
774:
265:
201:
196:
133:
4733:
4603:
4329:
4022:
3813:
3727:
3533:
3098:
2800:
Preinesberger, C.; Becker, S. K.; Vandré, S.; Kalka, T.; Dähne, M. (February 2002).
2743:
2692:
2598:
570:
image of epitaxial nanowire heterostructures grown from catalytic gold nanoparticles
5196:
5152:
5043:
4990:
4851:
4686:
4482:
4372:
4145:
4123:
2563:
1709:
1624:
1536:
994:
979:
962:
876:
The conductance in a nanowire is described as the sum of the transport by separate
818:
809:
778:
277:
71:
4073:
3609:
2306:
1548:) detection directly from serum for the diagnosis of acute myocardial infarction.
1384:
After p-n junctions were built with nanowires, the next logical step was to build
4782:
Wang, F.; Li, M.; Yu, L.; Sun, F.; Wang, Z.; Zhang, L.; Zeng, H.; Xu, X. (2017).
4399:
3911:
3004:
2801:
1947:
Shkondin, E.; Alimadadi, H., Takayama, O.; Jensen, F., Lavrinenko, A. V. (2020).
1568:, and other mechanically and beam sensitive samples), when transferring inside a
3370:
3047:
2927:
1860:
1662:
1430:
1423:
1385:
1373:
1322:
672:
583:
4892:
Strongest theoretical nanowire produced at Australia's University of Melbourne.
4824:
4321:
4269:
4259:
4242:
4196:
3413:
2872:
2039:
218:
5208:
4760:
4037:
3827:
2975:
2958:
1687:
1638:
1620:
1565:
761:
191:
153:
4364:
4278:
4219:
4065:
3961:
3805:
3770:
3711:
3547:
Huo, F.; Zheng, Z.; Zheng, G.; Giam, L. R.; Zhang, H.; Mirkin, C. A. (2008).
3378:
3335:
3264:
2935:
2880:
2833:
2236:
2079:
785:. More recently, after microscopy advancement, the nanowire growth driven by
5023:
3870:
3575:
3517:
2727:
2676:
1778:
1471:
1404:
1018:
676:
587:
273:
4843:
4694:
4655:
4558:
4549:
4532:
4474:
4407:
4169:"Lithium niobate nanowires: synthesis, optical properties and manipulation"
4014:
3896:"Design and fabrication of silicon nanowires towards efficient solar cells"
3719:
3665:
3647:
3601:
3525:
3475:
3282:
3199:
3191:
3152:
3133:
3090:
3055:
3012:
2786:
2735:
2684:
2633:
2555:
2476:
2467:
2450:
2427:
2419:
2376:
2314:
2271:
2244:
2187:
2169:
2087:
2071:
1846:
1796:
1739:
462:
This conductance is twice the reciprocal of the resistance unit called the
24:
4507:
853:
4343:
Yan, Ruoxue; Gargas, Daniel; Yang, Peidong (2009). "Nanowire photonics".
3491:"Nanowire Crossbar Arrays as Address Decoders for Integrated Nanosystems"
3467:
3310:
2590:
1918:
1755:"In Situ TEM Observation of a Microcrucible Mechanism of Nanowire Growth"
1545:
1475:
Nanowire lasers for ultrafast transmission of information in light pulses
1412:
1397:
1389:
999:
657:
594:. A bottom-up approach synthesizes the nanowire by combining constituent
378:
292:
283:
Many different types of nanowires exist, including superconducting (e.g.
4456:
3221:
Cheng, Zhe; Liu, Longju; Xu, Shen; Lu, Meng; Wang, Xinwei (2015-06-02).
2577:
Frank, F. C. (1949). "The influence of dislocations on crystal growth".
1572:(FIB), flexible metallic nanowires can be attached to a typically rigid
1321:/10. This huge increase in yield is determined to be due to the lack of
639:
in the surface of a metal near its melting point, and then retracting it
3832:
3583:
1730:
1713:
1667:
1393:
970:
782:
737:
712:
397:
382:
364:
66:
4875:
Stanford's nanowire battery holds 10 times the charge of existing ones
4647:
4192:
4006:
3953:
3895:
3762:
3256:
2825:
2778:
2341:
2227:
2202:
2130:
1975:
1838:
632:
The bombardment of a larger wire, typically with highly energetic ions
3925:
Kayes, Brendan M.; Atwater, Harry A.; Lewis, Nathan S. (2005-05-23).
3703:
2451:"Scalable Production of Monodisperse Bioactive Spider Silk Nanowires"
1483:
1357:
938:
729:
661:
595:
300:
288:
1753:
Boston, R.; Schnepp, Z.; Nemoto, Y.; Sakka, Y.; Hall, S. R. (2014).
1046:
has been applied to estimate the dependence of modulus on diameter:
4533:"Supersensitive Detection of Explosives by Silicon Nanowire Arrays"
4439:
3489:
Zhong, Z.; Wang, D; Cui, Y; Bockrath, M. W.; Lieber, C. M. (2003).
2959:"Efficient DNA-assisted synthesis of trans-membrane gold nanowires"
2029:
1005:
The study of nanowire mechanics has boomed since the advent of the
781:
present in specific directions or the growth anisotropy of various
4586:
4243:"Degradation of Cu nanowires in a low-reactive plasma environment"
3989:
3327:
3239:
1470:
1346:
1032:
993:
852:
760:
561:
363:
65:
4906:
4671:"Nanowire facilitated transfer of sensitive TEM samples in a FIB"
4502:. Smart Materials Series. Cambridge: Royal Society of Chemistry.
2146:"Approaching the ideal elastic strain limit in silicon nanowires"
1447:
Because of their high aspect ratio, nanowires are also suited to
1400:
gates have all been built from semiconductor nanowire crossings.
668:
369:
296:
269:
4910:
2498:
Sears, G.W. (1955). "A Growth Mechanism for Mercury Whiskers".
1491:
Sensing of proteins and chemicals using semiconductor nanowires
679:, or purchased in colloidal form and deposited on a substrate.
513:
Examples of nanowires include inorganic molecular nanowires (Mo
335:
are composed of repeating molecular units either organic (e.g.
2203:"Synthetically Encoding 10 nm Morphology in Silicon Nanowires"
336:
18:
4089:"Dielectrophoretic reconfiguration of nanowire interconnects"
1377:
ratio of nanowires potentially allows for good gate control.
4868:
1403:
In August 2012, researchers reported constructing the first
982:
is anticipated to have potential applications in the future
687:
allows for nanometer-scale morphological control via rapid
4871:
several images of nanowires are included in the galleries.
711:. From another point of view, such nanowires are cluster
574:
There are two basic approaches to synthesizing nanowires:
675:, which can either be self-assembled from a thin film by
392:
in nanowires is that they exhibit discrete values of the
3427:
Halford, Bethany (2008). "Wee Welding with Nanosolder".
3110:
3108:
3630:
Wang, Shiliang; Shan, Zhiwei; Huang, Han (2017-01-03).
1865:
The NIST Reference on Constants, Units, and Uncertainty
4800:
Photocatalyst Induced by Magnetic Dipole Interactions"
4749:
Journal of Materials Science: Materials in Electronics
4036:
Appenzeller, Joerg; Knoch, Joachim; Bjork, Mikael T.;
452:{\displaystyle {\frac {2e^{2}}{h}}\simeq 77.41\;\mu S}
1273:
1248:
1221:
1194:
1052:
986:
assembly of metallic one-dimensional nanostructures.
413:
1556:
For a minimal introduction of stress and bending to
1458:
Single nanowire devices for gas and chemical sensing
1296:
structure highly resembles that of the bulk system.
5138:
5115:
5092:
5059:
5014:
4977:
4944:
2056:"A Universal Pick-and-Place Assembly for Nanowires"
1552:
Nanowire assisted transfer of sensitive TEM samples
1279:
1259:
1234:
1207:
1180:
617:steps are often applied to tune their morphology.
451:
1411:to achieve low-resistance contacts by placing a
797:during the non-catalytic synthesis of nanowire.
648:A common technique for creating a nanowire is
4922:
3866:The Silicon Web: Physics for the Internet Age
241:
8:
1996:: CS1 maint: multiple names: authors list (
1956:Journal of Vacuum Science & Technology A
1932:: CS1 maint: multiple names: authors list (
1597:chemical bath deposition and corn-like γ-Fe
4929:
4915:
4907:
4720:nanowires as the light scattering layer".
1861:"2022 CODATA Value: von Klitzing constant"
1540:dramatically enhancing the sensitivity of
765:In situ observation of CuO nanowire growth
442:
248:
234:
81:
4833:
4823:
4585:
4548:
4464:
4438:
4268:
4258:
3988:
3655:
3591:
3309:
3272:
3238:
3142:
3132:
2974:
2802:"Structure of DySi2 nanowires on Si(001)"
2466:
2226:
2177:
2038:
2028:
2017:Theoretical and Applied Mechanics Letters
1917:
1788:1983/8f23c618-23f8-46e1-a1d9-960a0b491b1f
1786:
1729:
1272:
1252:
1247:
1226:
1220:
1199:
1193:
1166:
1157:
1151:
1146:
1131:
1125:
1103:
1094:
1088:
1063:
1051:
937:. In practical terms, this means that a
826:DNA-templated metallic nanowire synthesis
424:
414:
412:
3632:"The Mechanical Properties of Nanowires"
1356:Nanowires have been proposed for use as
49:of all important aspects of the article.
4537:Angewandte Chemie International Edition
4040:; Schmid, Heinz; Riess, Walter (2008).
2011:Liu, M.; Peng, J.; et al. (2016).
1699:
210:
182:
124:
96:
89:
1989:
1925:
1415:layer in the metal-silicon interface.
45:Please consider expanding the lead to
16:Wire with a diameter in the nanometres
4046:IEEE Transactions on Electron Devices
3677:
3675:
3625:
3623:
3621:
3619:
835:Crack-Defined Shadow Mask Lithography
629:The chemical etching of a larger wire
7:
5183:
4302:Semiconductor Science and Technology
861:image of a 15 micrometer nickel wire
174:List of semiconductor scale examples
74:nanowire grown inside a single-wall
4869:Nanohedron.com | Nano Image Gallery
3168:"Crack-Defined Electronic Nanogaps"
749:Liquid Bridge Induced Self-assembly
4496:Lu, Wei; Xiang, Jie, eds. (2015).
4144:. October 19, 2006. Archived from
2963:Microsystems & Nanoengineering
2579:Discussions of the Faraday Society
368:A noise-filtered HRTEM image of a
14:
5207:
5195:
5182:
5171:
5170:
3798:10.1093/jmicro/51.Supplement.S79
1637:
1623:
1558:transmission electron microscopy
967:transmission electron microscopy
660:particles or a feed gas such as
217:
169:Semiconductor device fabrication
23:
4734:10.1016/j.electacta.2012.12.065
4421:Mayer, B.; et al. (2017).
3844:from the original on 2021-12-11
3828:"Triumph of the MOS Transistor"
3429:Chemical & Engineering News
2144:Zhang, H.; et al. (2016).
1518:Several examples of the use of
1017:can be derived, as well as the
600:nanowire thermal treatment step
85:Part of a series of articles on
37:may be too short to adequately
4687:10.1016/j.ultramic.2020.113075
3786:Journal of Electron Microscopy
2614:Philos. Trans. R. Soc. Lond. A
2548:10.1088/0957-4484/20/16/165603
1175:
1172:
1118:
1115:
1081:
1069:
47:provide an accessible overview
1:
5130:Scanning tunneling microscope
4087:Wissner-Gross, A. D. (2006).
4042:"Toward nanowire electronics"
2307:10.1126/science.287.5457.1471
4784:"Corn-like, Recoverable γ-Fe
4400:10.1021/acs.nanolett.5b03404
4138:"Nanowires get reconfigured"
3912:10.1016/j.nantod.2016.10.001
3166:Dubois; et al. (2016).
3115:Enrico; et al. (2019).
3005:10.1021/acs.langmuir.6b01961
2512:10.1016/0001-6160(55)90041-9
1526:Limitations of sensing with
1267:is the surface modulus, and
955:scanning electron microscope
550:), or metals (e.g. Ni, Pt).
5102:Molecular scale electronics
4604:10.1209/0295-5075/108/36006
4116:10.1088/0957-4484/17/19/035
3863:Raymer, Michael G. (2009).
3371:10.1103/PhysRevLett.85.4124
3121:ACS Appl. Mater. Interfaces
3048:10.1103/PhysRevLett.86.3670
2928:10.1103/PhysRevB.102.115433
1582:in situ electron microscopy
508:integer quantum Hall effect
125:Solid-state nanoelectronics
106:Molecular scale electronics
97:Single-molecule electronics
5266:
4825:10.1038/s41598-017-07417-z
4260:10.1038/s41529-020-00137-2
3934:Journal of Applied Physics
3414:10.1103/PhysRevB.68.075311
2873:10.1103/PhysRevB.99.214104
2806:Journal of Applied Physics
2040:10.1016/j.taml.2016.08.002
965:process). High-resolution
816:nanowires form on silicon(
5166:
5117:Scanning probe microscopy
4761:10.1007/s10854-016-4748-2
4247:npj Materials Degradation
3549:"Polymer Pen Lithography"
2976:10.1038/micronano.2017.84
2957:Guo; et al. (2018).
2455:Macromolecular Bioscience
1898:Optical Materials Express
1317:the theoretical value of
998:Simulation of a nanowire
654:silicon nanowires (SiNWs)
650:vapor–liquid–solid method
305:silicon nanowires (SiNWs)
5140:Molecular nanotechnology
5084:Solid lipid nanoparticle
5069:Self-assembled monolayer
4365:10.1038/nphoton.2009.184
4322:10.1088/1361-6641/aa5e45
4220:10.1117/2.1201312.005260
4066:10.1109/TED.2008.2008011
3940:(11): 114302–114302–11.
1712:; Sloan, Jeremy (2014).
1362:field-effect transistors
723:Solution-phase synthesis
506:, the discoverer of the
303:), semiconducting (e.g.
5125:Atomic force microscope
5074:Supramolecular assembly
5061:Molecular self-assembly
4499:Semiconductor Nanowires
4173:Applied Physics Letters
3838:Computer History Museum
3576:10.1126/science.1162193
3518:10.1126/science.1090899
3028:Physical Review Letters
2728:10.1126/science.1157131
2677:10.1126/science.1182977
1779:10.1126/science.1251594
1372:, the dimension of MOS
1181:{\displaystyle E=E_{0}}
1028:
1007:atomic force microscope
635:Indenting the tip of a
339:) or inorganic (e.g. Mo
315:) and insulating (e.g.
4550:10.1002/anie.201000847
3648:10.1002/advs.201600332
3192:10.1002/adma.201504569
3134:10.1021/acsami.8b19410
3091:10.1002/adma.200400244
2634:10.1098/rsta.1951.0006
2468:10.1002/mabi.202200450
2420:10.1002/adma.201704325
2377:10.1002/adma.200390101
2330:Chemistry of Materials
2272:10.1002/cnma.201500123
2170:10.1126/sciadv.1501382
2072:10.1002/smll.202201968
1476:
1440:Because of their high
1353:
1281:
1261:
1236:
1209:
1182:
1038:
1002:
862:
766:
571:
453:
402:quantum of conductance
394:electrical conductance
388:A consequence of this
373:
224:Electronics portal
79:
78:(tube diameter ≈1 nm).
5245:Electrical connectors
5214:Technology portal
4508:10.1039/9781782626947
4427:Nature Communications
3448:Nature Nanotechnology
1474:
1350:
1338:Possible applications
1282:
1262:
1237:
1235:{\displaystyle r_{s}}
1215:is the bulk modulus,
1210:
1208:{\displaystyle E_{0}}
1183:
1036:
997:
990:Mechanical properties
856:
764:
565:
464:von Klitzing constant
454:
367:
70:Crystalline 2×2-atom
69:
5001:Green nanotechnology
3792:(suppl 1): S79–S85.
3468:10.1038/nnano.2010.4
3178:(11): 2172178–2182.
2591:10.1039/df9490500048
1919:10.1364/OME.7.001606
1584:sample preparation.
1271:
1260:{\displaystyle E{s}}
1246:
1219:
1192:
1050:
757:Non-catalytic growth
611:Ion track technology
411:
111:Molecular logic gate
5148:Molecular assembler
4816:2017NatSR...7.6960W
4722:Electrochimica Acta
4640:2012NanoL..12.5245E
4596:2014EL....10836006G
4457:10.1038/ncomms15521
4449:2017NatCo...815521M
4357:2009NaPho...3..569Y
4314:2017SeScT..32e3001K
4270:20.500.11850/454060
4185:2009ApPhL..95n3105G
4108:2006Nanot..17.4986W
4058:2008ITED...55.2827A
3999:2012NanoL..12.3074M
3946:2005JAP....97k4302K
3755:2003NanoL...3.1495L
3696:2005NatMa...4..525W
3568:2008Sci...321.1658H
3510:2003Sci...302.1377Z
3460:2010NatNa...5..218L
3406:2003PhRvB..68g5311T
3363:2000PhRvL..85.4124R
3320:1998Natur.395..783Y
3249:2015NatSR...510718C
3184:2016AdM....28.2178D
3083:2004AdM....16.1799O
3040:2001PhRvL..86.3670R
2999:(40): 10159–10165.
2920:2020PhRvB.102k5433A
2865:2019PhRvB..99u4104H
2818:2002JAP....91.1695P
2771:2014NanoL..14.5810R
2720:2008Sci...320.1060B
2714:(5879): 1060–1063.
2669:2010Sci...328..476M
2626:1951RSPTA.243..299B
2540:2009Nanot..20p5603R
2412:2018AdM....3004325G
2369:2003AdM....15..437H
2299:2000Sci...287.1471H
2219:2013NanoL..13.6281C
2162:2016SciA....2E1382Z
2123:1964ApPhL...4...89W
1968:2020JVSTA..38a3402S
1910:2017OMExp...7.1606S
1771:2014Sci...344..623B
1710:Bichoutskaia, Elena
1678:Non-carbon nanotube
1653:Bacterial nanowires
1588:Corn-like nanowires
1156:
1044:continuum mechanics
919:Quantum Hall effect
882:conductance quantum
871:ballistic transport
691:dopant modulation.
390:quantum confinement
333:Molecular nanowires
5250:Mesoscopic physics
5202:Science portal
5079:DNA nanotechnology
4880:2010-01-07 at the
3227:Scientific Reports
3172:Advanced Materials
3071:Advanced Materials
2400:Advanced Materials
2357:Advanced Materials
1731:10.1039/C4DT00185K
1542:cardiac biomarkers
1477:
1354:
1343:Electronic devices
1277:
1257:
1232:
1205:
1188:in tension, where
1178:
1142:
1039:
1003:
863:
787:screw dislocations
767:
745:nanocrystal seed.
572:
504:Klaus von Klitzing
449:
374:
287:), metallic (e.g.
183:Related approaches
80:
5222:
5221:
4648:10.1021/nl302434w
4634:(10): 5245–5254.
4543:(38): 6830–6835.
4517:978-1-84973-826-2
4193:10.1063/1.3236777
4102:(19): 4986–4990.
4052:(11): 2827–2845.
4007:10.1021/nl300930m
3954:10.1063/1.1901835
3840:. 6 August 2010.
3763:10.1021/nl034525b
3749:(11): 1495–1498.
3562:(5896): 1658–60.
3394:Physical Review B
3357:(19): 4124–4127.
3304:(6704): 783–785.
3257:10.1038/srep10718
3077:(20): 1799–1803.
2908:Physical Review B
2853:Physical Review B
2826:10.1063/1.1430540
2779:10.1021/nl502687s
2765:(10): 5810–5813.
2663:(5977): 476–480.
2342:10.1021/cm2007704
2336:(11): 2697–2699.
2228:10.1021/nl403909r
2213:(12): 6281–6286.
2131:10.1063/1.1753975
1976:10.1116/1.5130176
1839:10.1021/nn5023632
1645:Technology portal
1449:dielectrophoretic
1280:{\displaystyle D}
1011:stress vs. strain
976:surface diffusion
951:sacrificial metal
935:threshold voltage
906:elementary charge
615:thermal oxidation
592:thermal oxidation
473: =
434:
400:multiples of the
381:in nanowires are
268:in the form of a
258:
257:
64:
63:
5257:
5212:
5211:
5200:
5199:
5186:
5185:
5174:
5173:
5158:Mechanosynthesis
5049:characterization
4931:
4924:
4917:
4908:
4856:
4855:
4837:
4827:
4779:
4773:
4772:
4755:(7): 7640–7645.
4744:
4738:
4737:
4713:
4707:
4706:
4666:
4660:
4659:
4622:
4616:
4615:
4589:
4569:
4563:
4562:
4552:
4528:
4522:
4521:
4493:
4487:
4486:
4468:
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4418:
4412:
4411:
4383:
4377:
4376:
4345:Nature Photonics
4340:
4334:
4333:
4297:
4291:
4290:
4272:
4262:
4238:
4232:
4231:
4207:
4201:
4200:
4195:. Archived from
4164:
4158:
4157:
4155:
4153:
4134:
4128:
4127:
4093:
4084:
4078:
4077:
4033:
4027:
4026:
3992:
3972:
3966:
3965:
3931:
3922:
3916:
3915:
3891:
3885:
3884:
3860:
3854:
3853:
3851:
3849:
3824:
3818:
3817:
3781:
3775:
3774:
3738:
3732:
3731:
3704:10.1038/nmat1403
3684:Nature Materials
3679:
3670:
3669:
3659:
3636:Advanced Science
3627:
3614:
3613:
3595:
3553:
3544:
3538:
3537:
3504:(5649): 1377–9.
3495:
3486:
3480:
3479:
3443:
3437:
3436:
3424:
3418:
3417:
3389:
3383:
3382:
3346:
3340:
3339:
3313:
3311:cond-mat/9811093
3293:
3287:
3286:
3276:
3242:
3218:
3212:
3211:
3163:
3157:
3156:
3146:
3136:
3127:(8): 8217–8226.
3112:
3103:
3102:
3066:
3060:
3059:
3023:
3017:
3016:
2987:
2981:
2980:
2978:
2954:
2948:
2947:
2899:
2893:
2892:
2844:
2838:
2837:
2812:(3): 1695–1697.
2797:
2791:
2790:
2754:
2748:
2747:
2703:
2697:
2696:
2652:
2646:
2645:
2620:(866): 299–358.
2609:
2603:
2602:
2574:
2568:
2567:
2522:
2516:
2515:
2495:
2489:
2488:
2470:
2446:
2440:
2439:
2395:
2389:
2388:
2352:
2346:
2345:
2325:
2319:
2318:
2293:(5457): 1471–3.
2282:
2276:
2275:
2255:
2249:
2248:
2230:
2198:
2192:
2191:
2181:
2150:Science Advances
2141:
2135:
2134:
2111:Appl. Phys. Lett
2106:
2100:
2099:
2051:
2045:
2044:
2042:
2032:
2008:
2002:
2001:
1995:
1987:
1962:(1): 1606–1627.
1953:
1944:
1938:
1937:
1931:
1923:
1921:
1904:(5): 1606–1627.
1895:
1886:
1880:
1879:
1877:
1876:
1857:
1851:
1850:
1824:
1815:
1809:
1808:
1790:
1750:
1744:
1743:
1733:
1704:
1683:Silicon nanowire
1673:Nanowire battery
1647:
1642:
1641:
1633:
1628:
1627:
1574:micromanipulator
1570:focused ion beam
1528:silicon nanowire
1520:silicon nanowire
1482:are nano-scaled
1409:Schottky barrier
1293:nano-indentation
1286:
1284:
1283:
1278:
1266:
1264:
1263:
1258:
1256:
1241:
1239:
1238:
1233:
1231:
1230:
1214:
1212:
1211:
1206:
1204:
1203:
1187:
1185:
1184:
1179:
1171:
1170:
1161:
1155:
1150:
1135:
1130:
1129:
1108:
1107:
1098:
1093:
1092:
1068:
1067:
1023:strain-hardening
1021:, and degree of
899:
501:
484:
482:
478:
458:
456:
455:
450:
435:
430:
429:
428:
415:
250:
243:
236:
222:
221:
164:Multigate device
82:
59:
56:
50:
27:
19:
5265:
5264:
5260:
5259:
5258:
5256:
5255:
5254:
5240:Nanoelectronics
5225:
5224:
5223:
5218:
5206:
5194:
5162:
5134:
5111:
5107:Nanolithography
5094:Nanoelectronics
5088:
5055:
5010:
4973:
4964:Popular culture
4940:
4935:
4882:Wayback Machine
4865:
4860:
4859:
4799:
4795:
4791:
4787:
4781:
4780:
4776:
4746:
4745:
4741:
4728:(15): 302–308.
4719:
4715:
4714:
4710:
4675:Ultramicroscopy
4668:
4667:
4663:
4624:
4623:
4619:
4571:
4570:
4566:
4530:
4529:
4525:
4518:
4495:
4494:
4490:
4420:
4419:
4415:
4385:
4384:
4380:
4351:(10): 569–576.
4342:
4341:
4337:
4299:
4298:
4294:
4240:
4239:
4235:
4209:
4208:
4204:
4166:
4165:
4161:
4151:
4149:
4148:on May 22, 2007
4142:nanotechweb.org
4136:
4135:
4131:
4091:
4086:
4085:
4081:
4035:
4034:
4030:
3974:
3973:
3969:
3929:
3924:
3923:
3919:
3893:
3892:
3888:
3881:
3873:. p. 365.
3862:
3861:
3857:
3847:
3845:
3826:
3825:
3821:
3783:
3782:
3778:
3740:
3739:
3735:
3681:
3680:
3673:
3629:
3628:
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3551:
3546:
3545:
3541:
3493:
3488:
3487:
3483:
3445:
3444:
3440:
3426:
3425:
3421:
3391:
3390:
3386:
3351:Phys. Rev. Lett
3348:
3347:
3343:
3295:
3294:
3290:
3220:
3219:
3215:
3165:
3164:
3160:
3114:
3113:
3106:
3068:
3067:
3063:
3025:
3024:
3020:
2989:
2988:
2984:
2956:
2955:
2951:
2901:
2900:
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2846:
2845:
2841:
2799:
2798:
2794:
2756:
2755:
2751:
2705:
2704:
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2653:
2649:
2611:
2610:
2606:
2576:
2575:
2571:
2524:
2523:
2519:
2497:
2496:
2492:
2461:(4): e2200450.
2448:
2447:
2443:
2397:
2396:
2392:
2354:
2353:
2349:
2327:
2326:
2322:
2284:
2283:
2279:
2257:
2256:
2252:
2200:
2199:
2195:
2156:(8): e1501382.
2143:
2142:
2138:
2108:
2107:
2103:
2066:(38): 2201968.
2053:
2052:
2048:
2010:
2009:
2005:
1988:
1951:
1946:
1945:
1941:
1924:
1893:
1888:
1887:
1883:
1874:
1872:
1859:
1858:
1854:
1822:
1817:
1816:
1812:
1765:(6184): 623–6.
1752:
1751:
1747:
1706:
1705:
1701:
1696:
1643:
1636:
1629:
1622:
1619:
1612:
1608:
1604:
1600:
1595:
1590:
1560:(TEM) samples (
1554:
1532:
1514:
1510:
1506:
1493:
1480:Nanowire lasers
1469:
1467:Nanowire lasers
1460:
1366:MOS transistors
1345:
1340:
1306:
1269:
1268:
1244:
1243:
1222:
1217:
1216:
1195:
1190:
1189:
1162:
1121:
1099:
1084:
1059:
1048:
1047:
1031:
1029:Young's modulus
1015:Young's Modulus
992:
947:
928:
914:Planck constant
890:
884:
851:
846:
837:
828:
815:
807:
791:twin boundaries
759:
751:
725:
710:
704:
697:
685:UNC-Chapel Hill
646:
623:
560:
549:
545:
541:
537:
533:
529:
523:
516:
492:
486:
480:
476:
474:
472:
420:
416:
409:
408:
362:
360:Characteristics
355:
349:
342:
327:
320:
254:
216:
206:
178:
144:Nanolithography
120:
116:Molecular wires
91:Nanoelectronics
76:carbon nanotube
60:
54:
51:
44:
32:This article's
28:
17:
12:
11:
5:
5263:
5261:
5253:
5252:
5247:
5242:
5237:
5227:
5226:
5220:
5219:
5217:
5216:
5204:
5192:
5180:
5167:
5164:
5163:
5161:
5160:
5155:
5150:
5144:
5142:
5136:
5135:
5133:
5132:
5127:
5121:
5119:
5113:
5112:
5110:
5109:
5104:
5098:
5096:
5090:
5089:
5087:
5086:
5081:
5076:
5071:
5065:
5063:
5057:
5056:
5054:
5053:
5052:
5051:
5041:
5040:
5039:
5034:
5026:
5020:
5018:
5012:
5011:
5009:
5008:
5003:
4998:
4996:Nanotoxicology
4993:
4987:
4985:
4975:
4974:
4972:
4971:
4966:
4961:
4956:
4950:
4948:
4942:
4941:
4938:Nanotechnology
4936:
4934:
4933:
4926:
4919:
4911:
4905:
4904:
4899:
4894:
4889:
4884:
4872:
4864:
4863:External links
4861:
4858:
4857:
4797:
4793:
4789:
4785:
4774:
4739:
4717:
4708:
4661:
4617:
4574:Europhys. Lett
4564:
4523:
4516:
4488:
4413:
4394:(1): 152–156.
4378:
4335:
4292:
4233:
4202:
4199:on 2016-05-14.
4179:(14): 143105.
4159:
4129:
4096:Nanotechnology
4079:
4028:
3967:
3917:
3906:(6): 704–737.
3886:
3879:
3855:
3819:
3776:
3733:
3690:(7): 525–529.
3671:
3642:(4): 1600332.
3615:
3539:
3481:
3438:
3419:
3384:
3341:
3288:
3213:
3158:
3104:
3061:
3034:(16): 3670–3.
3018:
2982:
2949:
2914:(11): 115433.
2894:
2859:(21): 214104.
2839:
2792:
2749:
2698:
2647:
2604:
2569:
2534:(16): 165603.
2528:Nanotechnology
2517:
2506:(4): 361–366.
2490:
2441:
2390:
2363:(5): 437–440.
2347:
2320:
2277:
2250:
2193:
2136:
2101:
2046:
2023:(5): 195–199.
2003:
1939:
1881:
1852:
1833:(9): 9044–52.
1810:
1745:
1724:(20): 7391–9.
1698:
1697:
1695:
1692:
1691:
1690:
1685:
1680:
1675:
1670:
1665:
1660:
1658:Molecular wire
1655:
1649:
1648:
1634:
1631:Science portal
1618:
1615:
1610:
1606:
1602:
1598:
1593:
1589:
1586:
1553:
1550:
1531:
1524:
1512:
1508:
1504:
1492:
1489:
1468:
1465:
1459:
1456:
1442:Young's moduli
1344:
1341:
1339:
1336:
1310:yield strength
1305:
1304:Yield strength
1302:
1276:
1255:
1251:
1229:
1225:
1202:
1198:
1177:
1174:
1169:
1165:
1160:
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850:
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805:
804:silicide (RESi
795:TEM microscopy
758:
755:
750:
747:
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699:
695:
645:
642:
641:
640:
633:
630:
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559:
556:
547:
543:
539:
535:
531:
525:
518:
514:
502:and named for
490:
470:
460:
459:
448:
445:
441:
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427:
423:
419:
361:
358:
351:
344:
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256:
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122:
121:
119:
118:
113:
108:
102:
99:
98:
94:
93:
87:
86:
62:
61:
41:the key points
31:
29:
22:
15:
13:
10:
9:
6:
4:
3:
2:
5262:
5251:
5248:
5246:
5243:
5241:
5238:
5236:
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5232:
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5191:
5190:
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5120:
5118:
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5105:
5103:
5100:
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5097:
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5091:
5085:
5082:
5080:
5077:
5075:
5072:
5070:
5067:
5066:
5064:
5062:
5058:
5050:
5047:
5046:
5045:
5044:Nanoparticles
5042:
5038:
5035:
5033:
5030:
5029:
5027:
5025:
5022:
5021:
5019:
5017:
5016:Nanomaterials
5013:
5007:
5004:
5002:
4999:
4997:
4994:
4992:
4989:
4988:
4986:
4984:
4980:
4976:
4970:
4967:
4965:
4962:
4960:
4959:Organizations
4957:
4955:
4952:
4951:
4949:
4947:
4943:
4939:
4932:
4927:
4925:
4920:
4918:
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4266:
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4252:
4248:
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4213:
4212:SPIE Newsroom
4206:
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4032:
4029:
4024:
4020:
4016:
4012:
4008:
4004:
4000:
3996:
3991:
3986:
3983:(6): 3074–9.
3982:
3978:
3971:
3968:
3963:
3959:
3955:
3951:
3947:
3943:
3939:
3935:
3928:
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3909:
3905:
3901:
3897:
3890:
3887:
3882:
3880:9781439803127
3876:
3872:
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3616:
3611:
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3503:
3499:
3492:
3485:
3482:
3477:
3473:
3469:
3465:
3461:
3457:
3454:(3): 218–24.
3453:
3449:
3442:
3439:
3434:
3430:
3423:
3420:
3415:
3411:
3407:
3403:
3400:(7): 075311.
3399:
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3352:
3345:
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3337:
3333:
3329:
3328:10.1038/27405
3325:
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2308:
2304:
2300:
2296:
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2273:
2269:
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2261:
2254:
2251:
2246:
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2238:
2234:
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2224:
2220:
2216:
2212:
2208:
2204:
2197:
2194:
2189:
2185:
2180:
2175:
2171:
2167:
2163:
2159:
2155:
2151:
2147:
2140:
2137:
2132:
2128:
2124:
2120:
2116:
2112:
2105:
2102:
2097:
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2085:
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2077:
2073:
2069:
2065:
2061:
2057:
2050:
2047:
2041:
2036:
2031:
2026:
2022:
2018:
2014:
2007:
2004:
1999:
1993:
1985:
1981:
1977:
1973:
1969:
1965:
1961:
1957:
1950:
1943:
1940:
1935:
1929:
1920:
1915:
1911:
1907:
1903:
1899:
1892:
1885:
1882:
1870:
1866:
1862:
1856:
1853:
1848:
1844:
1840:
1836:
1832:
1828:
1821:
1814:
1811:
1806:
1802:
1798:
1794:
1789:
1784:
1780:
1776:
1772:
1768:
1764:
1760:
1756:
1749:
1746:
1741:
1737:
1732:
1727:
1723:
1719:
1715:
1711:
1703:
1700:
1693:
1689:
1686:
1684:
1681:
1679:
1676:
1674:
1671:
1669:
1666:
1664:
1661:
1659:
1656:
1654:
1651:
1650:
1646:
1640:
1635:
1632:
1626:
1621:
1616:
1614:
1587:
1585:
1583:
1577:
1575:
1571:
1567:
1563:
1559:
1551:
1549:
1547:
1543:
1538:
1529:
1525:
1523:
1521:
1516:
1501:
1497:
1490:
1488:
1485:
1481:
1473:
1466:
1464:
1457:
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1450:
1445:
1443:
1438:
1434:
1432:
1427:
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1420:
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1414:
1410:
1406:
1401:
1399:
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1391:
1387:
1382:
1378:
1375:
1371:
1367:
1363:
1359:
1349:
1342:
1337:
1335:
1333:
1329:
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1320:
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1314:nanomaterials
1311:
1303:
1301:
1297:
1294:
1289:
1274:
1253:
1249:
1227:
1223:
1200:
1196:
1167:
1163:
1158:
1152:
1147:
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1132:
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1112:
1109:
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1100:
1095:
1089:
1085:
1078:
1075:
1072:
1064:
1060:
1056:
1053:
1045:
1035:
1026:
1024:
1020:
1016:
1012:
1008:
1001:
996:
989:
987:
985:
981:
977:
972:
968:
964:
958:
956:
952:
944:
942:
940:
936:
930:
925:
921:
920:
915:
911:
907:
903:
898:
894:
887:
883:
879:
874:
872:
867:
860:
855:
848:
843:
841:
834:
832:
825:
823:
821:
820:
811:
803:
798:
796:
792:
788:
784:
783:crystal faces
780:
776:
775:Joule heating
771:
763:
756:
754:
748:
746:
743:
739:
733:
731:
722:
720:
716:
714:
709:
703:
692:
690:
686:
680:
678:
674:
670:
665:
663:
659:
655:
651:
643:
638:
634:
631:
628:
627:
626:
620:
618:
616:
612:
608:
603:
601:
597:
593:
589:
585:
581:
577:
569:
564:
557:
555:
551:
528:
522:
511:
509:
505:
500:
496:
489:
485:, defined as
469:
465:
446:
443:
439:
436:
431:
425:
421:
417:
407:
406:
405:
403:
399:
395:
391:
386:
384:
380:
371:
366:
359:
357:
354:
348:
338:
334:
330:
328:
321:
314:
310:
306:
302:
298:
294:
290:
286:
281:
279:
278:quantum wires
275:
271:
267:
266:nanostructure
263:
251:
246:
244:
239:
237:
232:
231:
229:
228:
225:
220:
215:
214:
209:
203:
202:Nanomechanics
200:
198:
197:Nanophotonics
195:
193:
190:
189:
187:
186:
181:
175:
172:
170:
167:
165:
162:
160:
157:
155:
152:
150:
147:
145:
142:
140:
137:
135:
134:Nanocircuitry
132:
131:
129:
128:
123:
117:
114:
112:
109:
107:
104:
103:
101:
100:
95:
92:
88:
84:
83:
77:
73:
68:
58:
55:February 2022
48:
42:
40:
35:
30:
26:
21:
20:
5187:
5175:
5153:Nanorobotics
4991:Nanomedicine
4983:applications
4807:
4803:
4777:
4752:
4748:
4742:
4725:
4721:
4711:
4678:
4674:
4664:
4631:
4628:Nano Letters
4627:
4620:
4580:(3): 36006.
4577:
4573:
4567:
4540:
4536:
4526:
4498:
4491:
4430:
4426:
4416:
4391:
4388:Nano Letters
4387:
4381:
4348:
4344:
4338:
4305:
4301:
4295:
4250:
4246:
4236:
4211:
4205:
4197:the original
4176:
4172:
4162:
4150:. Retrieved
4146:the original
4141:
4132:
4099:
4095:
4082:
4049:
4045:
4031:
3980:
3977:Nano Letters
3976:
3970:
3937:
3933:
3920:
3903:
3899:
3889:
3865:
3858:
3846:. Retrieved
3831:
3822:
3789:
3785:
3779:
3746:
3743:Nano Letters
3742:
3736:
3687:
3683:
3639:
3635:
3559:
3555:
3542:
3501:
3497:
3484:
3451:
3447:
3441:
3432:
3428:
3422:
3397:
3393:
3387:
3354:
3350:
3344:
3301:
3297:
3291:
3233:(1): 10718.
3230:
3226:
3216:
3175:
3171:
3161:
3124:
3120:
3074:
3070:
3064:
3031:
3027:
3021:
2996:
2992:
2985:
2966:
2962:
2952:
2911:
2907:
2897:
2856:
2852:
2842:
2809:
2805:
2795:
2762:
2758:
2752:
2711:
2707:
2701:
2660:
2656:
2650:
2617:
2613:
2607:
2582:
2578:
2572:
2531:
2527:
2520:
2503:
2499:
2493:
2458:
2454:
2444:
2403:
2399:
2393:
2360:
2356:
2350:
2333:
2329:
2323:
2290:
2286:
2280:
2266:(1): 37–41.
2263:
2259:
2253:
2210:
2207:Nano Letters
2206:
2196:
2153:
2149:
2139:
2114:
2110:
2104:
2063:
2059:
2049:
2020:
2016:
2006:
1992:cite journal
1959:
1955:
1942:
1928:cite journal
1901:
1897:
1884:
1873:. Retrieved
1864:
1855:
1830:
1826:
1813:
1762:
1758:
1748:
1721:
1718:Dalton Trans
1717:
1702:
1591:
1578:
1555:
1537:Debye length
1533:
1517:
1502:
1498:
1494:
1478:
1461:
1453:
1446:
1439:
1435:
1428:
1421:
1417:
1402:
1383:
1379:
1355:
1323:dislocations
1318:
1307:
1300:difference.
1298:
1290:
1040:
1004:
980:cold welding
963:cold welding
959:
948:
931:
923:
917:
916:) (see also
909:
901:
896:
892:
885:
877:
875:
868:
864:
849:Conductivity
838:
829:
817:
799:
772:
768:
752:
734:
726:
717:
707:
701:
693:
688:
681:
673:nanoclusters
666:
647:
624:
604:
573:
552:
526:
520:
512:
498:
494:
487:
467:
461:
387:
375:
352:
346:
331:
282:
261:
259:
138:
72:tin selenide
52:
36:
34:lead section
4810:(1). 6960.
4152:January 18,
4038:Riel, Heike
3584:10356/94822
2500:Acta Metall
2260:ChemNanoMat
1663:Nanoantenna
1530:FET devices
1431:quantum dot
1424:quantum dot
1386:logic gates
1374:transistors
1370:Moore's law
779:dislocation
742:Thermolysis
584:lithography
159:Moore's law
5229:Categories
5037:Non-carbon
5028:Nanotubes
5024:Fullerenes
5006:Regulation
4681:: 113075.
4440:1603.02169
4253:(1): 1–8.
3900:Nano Today
2030:1911.08908
1875:2024-05-18
1871:. May 2024
1694:References
1688:Solar cell
1566:thin films
1000:fracturing
802:rare-earth
644:VLS growth
621:Suspension
483:... Ω
274:nanometers
192:Nanoionics
154:Nanosensor
4769:137884561
4703:222255773
4612:118792981
4587:1411.0375
4433:. 15521.
4287:226248533
4279:2397-2106
4228:124474608
3990:1208.1465
3962:0021-8979
3871:CRC Press
3806:0022-0744
3771:1530-6984
3712:1476-1122
3435:(51): 35.
3379:0031-9007
3336:0028-0836
3265:2045-2322
3240:1411.7659
3208:205265220
2969:: 17084.
2944:224924918
2936:2469-9950
2889:197525473
2881:2469-9950
2834:0021-8979
2759:Nano Lett
2642:119643095
2485:256032679
2436:205283504
2385:137573988
2237:1530-6984
2117:(5): 89.
2096:251399932
2080:1613-6810
1984:209898658
1805:206555658
1405:NAND gate
1140:−
1110:−
1019:toughness
984:bottom-up
677:dewetting
580:bottom-up
558:Synthesis
444:μ
437:≃
379:electrons
139:Nanowires
39:summarize
5235:Nanowire
5177:Category
4946:Overview
4878:Archived
4844:28761085
4804:Sci. Rep
4695:33035837
4656:22963381
4559:20715224
4475:28534489
4408:26618638
4330:99074531
4023:22112655
4015:22594644
3842:Archived
3814:53588258
3728:34828518
3720:15937490
3666:28435775
3602:18703709
3534:35084433
3526:14631034
3476:20154688
3283:26035288
3200:26784270
3153:30698940
3099:97905129
3056:11328050
3013:27626925
2993:Langmuir
2787:25233273
2744:20919593
2736:18451264
2693:30955349
2685:20413496
2599:53512926
2556:19420573
2477:36662774
2428:29205540
2315:10688792
2245:24274858
2188:27540586
2088:35938750
1847:25163005
1827:ACS Nano
1797:24812400
1740:24637546
1617:See also
1562:lamellae
1546:Troponin
1413:silicide
878:channels
713:polymers
609:growth.
576:top-down
262:nanowire
5189:Commons
4969:Outline
4954:History
4852:6058050
4835:5537353
4812:Bibcode
4636:Bibcode
4592:Bibcode
4483:1099474
4466:5457509
4445:Bibcode
4373:2481816
4353:Bibcode
4310:Bibcode
4181:Bibcode
4124:4590982
4104:Bibcode
4054:Bibcode
3995:Bibcode
3942:Bibcode
3848:21 July
3833:YouTube
3751:Bibcode
3692:Bibcode
3657:5396167
3593:8247121
3564:Bibcode
3556:Science
3506:Bibcode
3498:Science
3456:Bibcode
3402:Bibcode
3359:Bibcode
3316:Bibcode
3274:4451791
3245:Bibcode
3180:Bibcode
3144:6426283
3079:Bibcode
3036:Bibcode
2916:Bibcode
2861:Bibcode
2814:Bibcode
2767:Bibcode
2716:Bibcode
2708:Science
2665:Bibcode
2657:Science
2622:Bibcode
2564:3529748
2536:Bibcode
2408:Bibcode
2365:Bibcode
2295:Bibcode
2287:Science
2215:Bibcode
2179:4988777
2158:Bibcode
2119:Bibcode
1964:Bibcode
1906:Bibcode
1767:Bibcode
1759:Science
1668:Nanorod
1358:MOSFETs
971:in situ
945:Welding
912:is the
904:is the
900:(where
844:Physics
738:toluene
689:in situ
658:ablated
596:adatoms
588:milling
398:integer
383:quantum
211:Portals
5032:Carbon
4979:Impact
4850:
4842:
4832:
4767:
4701:
4693:
4654:
4610:
4557:
4514:
4481:
4473:
4463:
4406:
4371:
4328:
4285:
4277:
4226:
4122:
4074:703393
4072:
4021:
4013:
3960:
3877:
3812:
3804:
3769:
3726:
3718:
3710:
3664:
3654:
3610:354452
3608:
3600:
3590:
3532:
3524:
3474:
3377:
3334:
3298:Nature
3281:
3271:
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