261:. that could be programmed and erased on the system board for the first time. The improved version of EEPROM "A 5V-only 16K EEPROM utilizing oxynitride dielectrics" could be programmed and erased on the system board for the first time. It used an on-chip charge pump to generate required programming voltages. It was this ability to program and erase at system levels that allowed
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different from its predecessor the P-channel EPROM, that would work with the microprocessors Intel was developing at the time. The project known as the 2708, was introduced by Intel in 1975. His invention of the N-channel EPROM was important, as it was the first time a positive voltage and channel
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injection was used for a nonvolatile memory device, thus requiring significantly lower voltage than its P-channel predecessor. The 2708 was a revolutionary chip, particularly for use with microprocessors. In 1978, Perlegos designed and developed the Intel 2816, an
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technologies and a new semiconductor chip. After learning about the opportunities to work on these new technologies during the interview, he left AMI for Intel in 1974. While at Intel, he became an expert in
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integrated circuits technology. He simultaneously enrolled in
Stanford University to learn more about MOS processing and circuit design. He stayed with AMI through 1974.
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778:"US Patent for Electrically-programmable and electrically-erasable MOS memory device Patent (Patent # 4,558,344 issued December 10, 1985) – Justia Patents Search"
574:"US Patent for Electrically-programmable and electrically-erasable MOS memory device Patent (Patent # 4,558,344 issued December 10, 1985) – Justia Patents Search"
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802:"US Patent for Method of making EPROM cell with reduced programming voltage Patent (Patent # 4,519,849 issued May 28, 1985) – Justia Patents Search"
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A. Gupta, Te-Long Chiu, M. Chang, A. Renninger and G. Perlegos, "A 5V-only 16K EEPROM utilizing oxynitride dielectrics and EPROM redundancy,"
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167:. Perlegos and his two brothers came to the United States in 1962 and he began working as a grape farmer. He finished high school in
497:"US Patent for Erasable programmable read-only memory Patent (Patent # 3,938,108 issued February 10, 1976) – Justia Patents Search"
237:
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2017 – Flash Memory Summit
Lifetime Achievement Award winner "for chip design and fabrication process inventions used in
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Leaving Intel with other Intel employees in 1981, he founded SEEQ Technology. He developed an improved version of
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63:
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US Patent for
Electrically-programmable and electrically-erasable MOS memory device Patent (Patent # 4,558,344)
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of Atmel from 1984 to 2006. The firm created many embedded EEPROM and flash memory devices, was a pioneer in
249:(EEPROM) that eliminated the lengthy UV exposure cycle using tunneling to both program and erase the memory.
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US Patent for Method of making EPROM cell with reduced programming voltage Patent (Patent # 4,519,849)
143:(born 1950) is a Greek-American computer scientist and engineer, best known for pioneering the use of
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S. Mehrotra, Tsung-Ching Wu, Te-Long Chiu and G. Perlegos, "A 64Kb CMOS EEROM with on-chip ECC,"
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470:"George Perlegos Inventions, Patents and Patent Applications – Justia Patents Search"
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1982 IEEE International Solid-State
Circuits Conference. Digest of Technical Papers
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1984 IEEE International Solid-State
Circuits Conference. Digest of Technical Papers
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1982 IEEE International Solid-State
Circuits Conference. Digest of Technical Papers
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1984 IEEE International Solid-State
Circuits Conference. Digest of Technical Papers
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207:(ASICs). His first assignment there was to design a single-chip calculator using
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US Patent for
Erasable programmable read-only memory Patent (Patent # 3,938,108)
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devices which have been instrumental in the ubiquity of non-volatile memory."
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623:"A 5V-only 16K EEPROM utilizing oxynitride dielectrics and EPROM redundancy"
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W. Ip, Te-Long Chiu, Tsung-Ching Wu and G. Perlegos, "256Kb CMNOS EPROM,"
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in 1975, and from 1975–1978 attended courses there in pursuit of a PhD.
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Gupta, A.; Te-Long Chiu; Chang, M.; Renninger, A.; Perlegos, G. (1982).
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411:"George Perlegos – Charles W. Davidson College of Engineering at SJSU"
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438:"Perlegos, George oral history | 102746703 | Computer History Museum"
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devices to be incorporated in all computers, laptops, cellphones etc
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Invention of the N-channel EPROM, EEPROM, founder and CEO of Atmel
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550:"Flash Memory Lifetime Achievement Award 2017 – George Perlegos"
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Perlegos was born in 1950 to parents Eleni and Pete
Perlegos in
601:"EEPROM (Electrically Erasable Programmable Read-Only Memory)"
699:"Atmel 2004 Flash-Based Microcontroller Chip Product Sheet"
740:"Electronics Industry's Movers & Shakers of 2003"
240:. His first task, to design and develop an N-channel
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American chief executives of manufacturing companies
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Electronics
Industry's Movers & Shakers of 2003
199:In 1972, his first job after San Jose State was at
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369:, San Francisco, CA, USA, 1984, pp. 142–143,
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347:, San Francisco, CA, USA, 1984, pp. 138–139,
223:. At this time Intel had a new project to develop
219:While attending Stanford, Perlegos interviewed at
682:"Atmel 1999 Flash-Based Microcontroller Strategy"
8:
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205:application specific integrated circuits
527:"Remembering the PROM knights of Intel"
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444:. Computer History Museum. 8 July 2013
179:in 1972 with a Bachelor of Science in
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238:semiconductor fabrication processes
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915:San Jose State University alumni
910:People from Arcadia, Peloponnese
865:American people of Greek descent
841:, in the Computer History Museum
328:", Electronic Engineering Times.
201:American Micro Systems Inc (AMI)
839:Oral History of George Perlegos
829:https://www.georgeperlegos.com/
360:doi: 10.1109/ISSCC.1982.1156369
349:doi: 10.1109/ISSCC.1984.1156664
333:Select publications and patents
289:, as well as the world’s first
209:MOS (Metal Oxide Semiconductor)
133:https://www.georgeperlegos.com/
16:Computer scientist and engineer
880:Businesspeople from California
371:doi:10.1109/ISSCC.1984.1156662
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895:American electrical engineers
834:US Patents by George Perlegos
203:, then a leading supplier of
187:in Electrical Engineering at
764:Electronic Engineering Times
230:semiconductor device physics
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900:Stanford University alumni
890:Greek electrical engineers
757:"30 Who Made a Difference"
635:10.1109/ISSCC.1982.1156369
321:", Reed Electronics Group.
277:In 1984, Perlegos founded
247:Electrically Erasable PROM
177:San Jose State University
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64:San Jose State University
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326:30 Who Made a Difference
155:Early life and education
442:www.computerhistory.org
183:. He later completed a
181:Electrical Engineering
175:, and graduated from
111:Electrical Engineering
658:"EDN – The Quiet Man"
554:flashmemorysummit.com
415:engineering.sjsu.edu
293:with on-chip flash.
281:corporation and was
189:Stanford University
75:Stanford University
806:patents.justia.com
782:patents.justia.com
578:patents.justia.com
501:patents.justia.com
474:patents.justia.com
225:nonvolatile memory
297:Honors and awards
221:Intel Corporation
185:Master of Science
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98:Scientific career
29:Γεώργιος Πυρλήκος
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849:Categories
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787:2020-06-15
725:2020-06-05
667:2020-06-05
607:2020-06-05
583:2020-06-15
559:2020-06-05
506:2020-06-15
479:2020-06-15
448:2020-06-05
420:2020-06-05
394:References
173:California
643:26572964
531:EE|TIMES
378:Patents
161:Arcadia
129:Website
41:Arcadia
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308:EEPROM
263:EEPROM
259:EEPROM
236:, and
195:Career
165:Greece
145:EEPROM
104:Fields
45:Greece
760:(PDF)
743:(PDF)
702:(PDF)
685:(PDF)
639:S2CID
304:EPROM
279:Atmel
273:ATMEL
267:FLASH
242:EPROM
215:Intel
149:Atmel
310:and
169:Lodi
37:1950
34:Born
662:EDN
631:doi
287:NVM
283:CEO
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