909:
resistance at RF frequencies, which would give rise to harmonics and intermodulation products. If the signal is large, then when the PIN diode starts to rectify the signal, the forward current charges the drift region and the device RF impedance is inversely proportional to the signal amplitude. That signal amplitude varying resistance can be used to terminate some predetermined portion of the signal in a resistive network dissipating the energy or to create an impedance mismatch that reflects the incident signal back toward the source. The latter may be combined with an isolator, a device containing a circulator which uses a permanent magnetic field to break reciprocity and a resistive load to separate and terminate the backward traveling wave. When used as a shunt limiter the PIN diode impedance is low over the entire RF cycle, unlike paired rectifier diodes that would swing from a high resistance to a low resistance during each RF cycle clamping the waveform and not reflecting it as completely. The ionization recovery time of gas molecules that permits the creation of the higher power spark gap input protection device ultimately relies on similar physics in a gas.
36:
284:
time, with no effect on the minimum time required to sweep the charge from the I region. Increasing the thickness of the intrinsic region increases the total stored charge, decreases the minimum RF frequency, and decreases the reverse-bias capacitance, but doesn't decrease the forward-bias RF resistance and increases the minimum time required to sweep the drift charge and transition from low to high RF resistance. Diodes are sold commercially in a variety of geometries for specific RF bands and uses.
863:
217:. In other words, the intrinsic "i" region is flooded with charge carriers from the "p" and "n" regions. Its function can be likened to filling up a water bucket with a hole on the side. Once the water reaches the hole's level it will begin to pour out. Similarly, the diode will conduct current once the flooded electrons and holes reach an equilibrium point, where the number of electrons is equal to the number of holes in the intrinsic region.
562:
313:
108:
145:
547:
900:
attenuated result is taken from the isolation port. The advantages of this approach over the bridged-T and pi approaches are (1) complementary PIN diode bias drives are not needed—the same bias is applied to both diodes—and (2) the loss in the attenuator equals the return loss of the terminations, which can be varied over a very wide range.
858:{\displaystyle {\begin{aligned}A&=20\log _{10}\left({\frac {Z_{\mathrm {load} }+Z_{\mathrm {source} }}{Z_{\mathrm {source} }+Z_{\mathrm {diode} }+Z_{\mathrm {load} }}}\right)\\&=20\log _{10}\left({\frac {50\,\Omega +50\,\Omega }{50\,\Omega +497\,\Omega +50\,\Omega }}\right)\\&={15.52}\,\mathrm {dB} \end{aligned}}}
283:
The diode design has some design trade-offs. Increasing the cross-section area of the intrinsic region increases its stored charge reducing its RF on-state resistance while also increasing reverse bias capacitance and increasing the drive current required to remove the charge during a fixed switching
275:
In a PIN diode the depletion region exists almost completely within the intrinsic region. This depletion region is much larger than in a PN diode and almost constant-size, independent of the reverse bias applied to the diode. This increases the volume where electron-hole pairs can be generated by an
960:
is better long-wavelength response of the former. In case of long wavelength irradiation, photons penetrate deep into the cell. But only those electron-hole pairs generated in and near the depletion region contribute to current generation. The depletion region of a PIN structure extends across the
899:
PIN diodes might be used, for example, as the bridge and shunt resistors in a bridged-T attenuator. Another common approach is to use PIN diodes as terminations connected to the 0 degree and -90 degree ports of a quadrature hybrid. The signal to be attenuated is applied to the input port, and the
868:
This attenuation may not be adequate. In applications where higher isolation is needed, both shunt and series elements may be used, with the shunt diodes biased in complementary fashion to the series elements. Adding shunt elements effectively reduces the source and load impedances, reducing the
908:
PIN diodes are sometimes designed for use as input protection devices for high-frequency test probes and other circuits. If the input signal is small, the PIN diode has negligible impact, presenting only a small parasitic capacitance. Unlike a rectifier diode, it does not present a nonlinear
1009:
In modern fiber-optical communications, the speed of optical transmitters and receivers is one of the most important parameters. Due to the small surface of the photodiode, its parasitic (unwanted) capacitance is reduced. The bandwidth of modern pin photodiodes is reaching the microwave and
228:, the electric field extends deeply (almost the entire length) into the region. This electric field helps in speeding up of the transport of charge carriers from the P to the N region, which results in faster operation of the diode, making it a suitable device for high-frequency operation.
241:. At a low-enough frequency, the stored charge can be fully swept and the diode turns off. At higher frequencies, there is not enough time to sweep the charge from the drift region, so the diode never turns off. The time required to sweep the stored charge from a diode junction is its
885:
371:
1218:
Attila Hilt, Gábor Járó, Attila Zólomy, Béatrice Cabon, Tibor
Berceli, Tamás Marozsák: "Microwave Characterization of High-Speed pin Photodiodes", Proc. of the 9th Conference on Microwave Techniques COMITE’97, pp.21-24, Pardubice, Czech Republic, 16-17 Oct.
869:
impedance ratio and increasing the off-state attenuation. However, in addition to the added complexity, the on-state attenuation is increased due to the series resistance of the on-state blocking element and the capacitance of the off-state shunt elements.
236:
The PIN diode obeys the standard diode equation for low-frequency signals. At higher frequencies, the diode looks like an almost perfect (very linear, even for large signals) resistor. The P-I-N diode has a relatively large stored charge adrift in a thick
895:
At high frequencies, the PIN diode appears as a resistor whose resistance is an inverse function of its forward current. Consequently, PIN diode can be used in some variable attenuator designs as amplitude modulators or output leveling circuits.
245:, and it is relatively long in a PIN diode. For a given semiconductor material, on-state impedance, and minimum usable RF frequency, the reverse recovery time is fixed. This property can be exploited; one variety of P-I-N diode, the
256:
The high-frequency resistance is inversely proportional to the DC bias current through the diode. A PIN diode, suitably biased, therefore acts as a variable resistor. This high-frequency resistance may vary over a wide range (from
994:
cells use NIP structure, a variation of the PIN structure. In a NIP structure, an intrinsic CdTe layer is sandwiched by n-doped CdS and p-doped ZnTe; the photons are incident on the n-doped layer, unlike in a PIN diode.
924:
PIN photodiodes are used in fibre optic network cards and switches. As a photodetector, the PIN diode is reverse-biased. Under reverse bias, the diode ordinarily does not conduct (save a small dark current or
542:{\displaystyle {\begin{aligned}Z_{\mathrm {diode} }&={\frac {1}{2\pi fC}}\\&={\frac {1}{2\pi (320\times 10^{6}\,\mathrm {Hz} )(1\times 10^{-12}\,\mathrm {F} )}}\\&=497\,\Omega \end{aligned}}}
976:. They feature fast response times (higher than their p-n counterparts), running into several tens of gigahertz, making them ideal for high speed optical telecommunication applications. Similarly,
567:
376:
224:, the injected carrier concentration is typically several orders of magnitude higher than the intrinsic carrier concentration. Due to this high level injection, which in turn is due to the
65:
1265:
198:(one typical function of a diode), but it makes it suitable for attenuators, fast switches, photodetectors, and high-voltage power electronics applications.
968:
Commercially available PIN photodiodes have quantum efficiencies above 80-90% in the telecom wavelength range (~1500 nm), and are typically made of
280:
devices, such as PIN photodiodes and phototransistors (in which the base-collector junction is a PIN diode), use a PIN junction in their construction.
2139:
961:
intrinsic region, deep into the device. This wider depletion width enables electron-hole pair generation deep within the device, which increases the
1780:
1115:
1697:
1082:
980:
p-i-n photodiodes have even higher quantum efficiencies, but can only detect wavelengths below the bandgap of silicon, i.e. ~1100 nm.
1478:
1258:
1461:
1357:
1158:
87:
346:), although at lower RF frequencies it isn't reasonable to expect switching times in the same order of magnitude as the RF period.
1601:
1328:
1195:
1649:
1448:
1251:
2308:
1133:
1018:
SFH203 and BPW34 are cheap general purpose PIN diodes in 5 mm clear plastic cases with bandwidths over 100 MHz.
249:, exploits the abrupt impedance change at the end of the reverse recovery to create a narrow impulse waveform useful for
2323:
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1432:
48:
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1340:
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69:
1907:
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872:
PIN diode switches are used not only for signal selection, but also component selection. For example, some low-
297:
1181:
2328:
2313:
1918:
1638:
1437:
1032:
973:
238:
187:
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1003:
176:
941:. The reverse-bias field sweeps the carriers out of the region, creating current. Some detectors can use
328:. Under a forward bias of 1 mA (the "on" state), a typical PIN diode will have an RF resistance of about
2156:
2108:
1929:
1745:
1660:
1591:
1427:
1037:
1102:
892:
By changing the bias current through a PIN diode, it is possible to quickly change its RF resistance.
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1150:
Electronic
Inventions and Discoveries: Electronics from Its Earliest Beginnings to the Present Day
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Although RF relays can be used as switches, they switch relatively slowly (on the order of
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2029:
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1514:
335:, making it a good conductor of RF. Consequently, the PIN diode makes a good RF switch.
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1999:
1989:
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1232:
956:. In this case, the advantage of using a PIN structure over conventional semiconductor
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The wide intrinsic region also means the diode will have a low capacitance when
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For example, the capacitance of an "off"-state discrete PIN diode might be
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Under zero- or reverse-bias (the "off" state), a PIN diode has a low
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1103:
http://www.alternatewars.com/WW3/WW3_Documents/ABM_Bell/ABM_Ch8.htm
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29:
194:. The wide intrinsic region makes the PIN diode an inferior
175:
region. The p-type and n-type regions are typically heavily
1182:"Discovery semiconductor 40G InGaAs photodetector modules"
342:). A PIN diode switch can switch much more quickly (e.g.,
205:
and his colleagues in 1950. It is a semiconductor device.
1081:, Watertown, MA: Microsemi Corp., MicroNote Series 701,
149:
The diode may be denoted by "PIN" letters on the diagram
565:
374:
265:
in some cases; the useful range is smaller, though).
948:
The same mechanism applies to the PIN structure, or
2229:
2129:
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1965:
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117:
857:
541:
876:oscillators use them to range-switch inductors.
57:but its sources remain unclear because it lacks
324:. The low capacitance will not pass much of an
1259:
8:
213:A PIN diode operates under what is known as
100:
27:Optical diode invented by Jun-Ichi Nishizawa
1122:. Archived from the original on 2013-10-30.
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1244:
106:
1238:PIN Limiter Diodes in Receiver Protectors
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88:Learn how and when to remove this message
1116:"Microwave Switches: Application Notes"
1064:
990:use PIN structures. On the other hand,
1196:"Si photodiodes | Hamamatsu Photonics"
1125:
556:system, the off-state attenuation is:
99:
880:RF and microwave variable attenuators
7:
1698:Three-dimensional integrated circuit
1147:Dummer, G. W. A. (22 October 2013).
888:An RF microwave PIN diode attenuator
1479:Programmable unijunction transistor
917:The PIN photodiode was invented by
913:Photodetector and photovoltaic cell
201:The PIN photodiode was invented by
1380:Multi-gate field-effect transistor
1099:https://srmsc.org/pdf/004430p0.pdf
1075:MicroNotes: PIN Diode Fundamentals
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25:
1358:Insulated-gate bipolar transistor
1233:The PIN Diode Designers' Handbook
998:A PIN photodiode can also detect
1602:Heterostructure barrier varactor
1329:Chemical field-effect transistor
933:of sufficient energy enters the
143:
34:
1650:Mixed-signal integrated circuit
1088:from the original on 2022-10-09
316:A PIN diode RF microwave switch
512:
484:
481:
453:
357:, the capacitive reactance of
190:is in contrast to an ordinary
1:
1681:Silicon controlled rectifier
1543:Organic light-emitting diode
1433:Diffused junction transistor
937:of the diode, it creates an
921:and his colleagues in 1950.
1485:Static induction transistor
1422:Bipolar junction transistor
1374:MOS field-effect transistor
1346:Fin field-effect transistor
1240:, Skyworks application note
2345:
1692:Static induction thyristor
1048:Parallel optical interface
179:because they are used for
1861:(Hexode, Heptode, Octode)
1613:Hybrid integrated circuit
1456:Light-emitting transistor
1170:– via Google Books.
1132:: CS1 maint: unfit URL (
552:As a series element in a
308:RF and microwave switches
292:PIN diodes are useful as
142:
105:
1908:Backward-wave oscillator
1618:Light emitting capacitor
1474:Point-contact transistor
1444:Junction Gate FET (JFET)
1120:Herley General Microwave
1010:millimeter waves range.
1002:in case it is used as a
943:avalanche multiplication
251:frequency multiplication
43:This article includes a
1919:Crossed-field amplifier
1438:Field-effect transistor
1033:Interconnect bottleneck
1014:Example PIN photodiodes
165:intrinsic semiconductor
72:more precise citations.
2088:Voltage-regulator tube
1655:MOS integrated circuit
1520:Constant-current diode
1496:Unijunction transistor
1004:semiconductor detector
889:
859:
543:
317:
304:, and phase shifters.
276:incident photon. Some
2157:Electrolytic detector
1930:Inductive output tube
1746:Low-dropout regulator
1661:Organic semiconductor
1592:Printed circuit board
1428:Darlington transistor
1275:Electronic components
1101:(transcript version:
1038:Optical communication
887:
860:
544:
315:
253:with high multiples.
243:reverse recovery time
163:with a wide, undoped
112:Layers of a PIN diode
2309:Microwave technology
1975:Beam deflection tube
1644:Metal oxide varistor
1537:Light-emitting diode
1391:Thin-film transistor
1352:Floating-gate MOSFET
1043:Optical interconnect
563:
372:
340:tens of milliseconds
215:high-level injection
173:n-type semiconductor
169:p-type semiconductor
2324:Japanese inventions
1951:Traveling-wave tube
1751:Switching regulator
1587:Printed electronics
1564:Step recovery diode
1341:Depletion-load NMOS
1053:Step recovery diode
247:step recovery diode
102:
2256:Crystal oscillator
2116:Variable capacitor
1791:Switched capacitor
1733:Voltage regulators
1607:Integrated circuit
1491:Tetrode transistor
1469:Pentode transistor
1462:Organic LET (OLET)
1449:Organic FET (OFET)
1000:ionizing radiation
963:quantum efficiency
939:electron-hole pair
919:Jun-ichi Nishizawa
890:
855:
853:
539:
537:
318:
220:When the diode is
203:Jun-Ichi Nishizawa
45:list of references
2319:Power electronics
2291:
2290:
2251:Ceramic resonator
2063:Mercury-arc valve
2015:Video camera tube
1967:Cathode-ray tubes
1727:
1726:
1335:Complementary MOS
1028:Fiber-optic cable
985:amorphous silicon
929:leakage). When a
821:
735:
516:
429:
226:depletion process
167:region between a
153:
152:
137:Electronic symbol
98:
97:
90:
16:(Redirected from
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2145:electrical power
2030:Gas-filled tubes
1914:Cavity magnetron
1741:Linear regulator
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935:depletion region
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239:intrinsic region
188:intrinsic region
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68:this article by
59:inline citations
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2140:audio and video
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1961:
1889:
1870:Photomultiplier
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1723:
1671:Quantum circuit
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1573:
1515:Avalanche diode
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1072:Doherty, Bill,
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1016:
988:thin-film cells
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232:Characteristics
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49:related reading
39:
35:
28:
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22:
18:P-i-n and n-i-p
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5:
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2314:Optical diodes
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2219:Wollaston wire
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2000:Selectron tube
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1990:Magic eye tube
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1559:Schottky diode
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61:
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54:
50:
46:
41:
32:
31:
19:
2038:Cold cathode
2005:Storage tube
1895:Vacuum tubes
1844:Neutron tube
1819:Beam tetrode
1801:Vacuum tubes
1553:
1386:Power MOSFET
1214:
1203:. Retrieved
1199:
1190:
1176:
1164:. Retrieved
1153:. Elsevier.
1149:
1142:
1119:
1110:
1094:
1074:
1067:
1017:
1008:
997:
982:
967:
958:p–n junction
949:
947:
923:
916:
907:
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894:
891:
871:
867:
551:
348:
337:
319:
291:
288:Applications
282:
274:
267:
255:
235:
219:
214:
212:
200:
185:
156:
154:
84:
75:
64:Please help
56:
2204:Transformer
1946:Sutton tube
1786:Charge pump
1639:Memory cell
1569:Zener diode
1531:Laser diode
1414:transistors
1296:transistors
983:Typically,
874:phase-noise
322:capacitance
298:attenuators
294:RF switches
70:introducing
2298:Categories
2276:reed relay
2266:Parametron
2199:Thermistor
2177:resettable
2136:Connector
2097:Adjustable
2073:Nixie tube
2043:Crossatron
2010:Trochotron
1985:Iconoscope
1980:Charactron
1957:X-ray tube
1829:Compactron
1809:Acorn tube
1766:Buck–boost
1687:Solaristor
1549:Photodiode
1526:Gunn diode
1522:(CLD, CRD)
1304:Transistor
1205:2021-03-26
1059:References
954:solar cell
2239:Capacitor
2083:Trigatron
2078:Thyratron
2068:Neon lamp
1995:Monoscope
1875:Phototube
1859:Pentagrid
1824:Barretter
1709:Trancitor
1704:Thyristor
1629:Memristor
1554:PIN diode
1331:(ChemFET)
970:germanium
818:Ω
808:Ω
798:Ω
789:Ω
779:Ω
765:
594:
533:Ω
499:−
491:×
460:×
451:π
420:π
326:RF signal
209:Operation
196:rectifier
192:p–n diode
186:The wide
157:PIN diode
101:PIN diode
78:July 2022
2261:Inductor
2231:Reactive
2209:Varistor
2189:Resistor
2167:Antifuse
2053:Ignitron
2048:Dekatron
1936:Klystron
1925:Gyrotron
1854:Nuvistor
1771:Split-pi
1657:(MOS IC)
1624:Memistor
1382:(MuGFET)
1376:(MOSFET)
1348:(FinFET)
1166:14 April
1128:cite web
1083:archived
1022:See also
904:Limiters
363:497 ohms
128:Invented
2162:Ferrite
2130:Passive
2121:Varicap
2109:digital
2058:Krytron
1880:Tetrode
1865:Pentode
1719:Varicap
1700:(3D IC)
1676:RF CMOS
1580:devices
1354:(FGMOS)
1285:devices
978:silicon
952:, of a
355:320 MHz
171:and an
66:improve
2304:Diodes
2194:Switch
1885:Triode
1849:Nonode
1814:Audion
1694:(SITh)
1578:Other
1545:(OLED)
1507:Diodes
1458:(LET)
1440:(FET)
1412:Other
1360:(IGBT)
1337:(CMOS)
1324:BioFET
1319:BiCMOS
1157:
974:InGaAs
931:photon
554:50 ohm
2271:Relay
2244:types
2182:eFUSE
1953:(TWT)
1941:Maser
1932:(IOT)
1921:(CFA)
1910:(BWO)
1834:Diode
1781:SEPIC
1761:Boost
1714:TRIAC
1683:(SCR)
1646:(MOV)
1620:(LEC)
1539:(LED)
1498:(UJT)
1487:(SIT)
1481:(PUT)
1424:(BJT)
1393:(TFT)
1369:LDMOS
1364:ISFET
1219:1997.
1086:(PDF)
1079:(PDF)
839:15.52
353:. At
263:10 kΩ
259:0.1 Ω
177:doped
161:diode
159:is a
51:, or
2214:Wire
2172:Fuse
1756:Buck
1609:(IC)
1597:DIAC
1533:(LD)
1402:UMOS
1397:VMOS
1314:PMOS
1309:NMOS
1294:MOS
1168:2018
1155:ISBN
1134:link
992:CdTe
359:1 pF
351:1 pF
131:1950
118:Type
1776:Ćuk
972:or
804:497
756:log
585:log
529:497
457:320
361:is
332:ohm
261:to
2300::
2150:RF
1899:RF
1198:.
1130:}}
1126:{{
1118:.
1006:.
945:.
814:50
794:50
785:50
775:50
760:10
752:20
589:10
581:20
502:12
495:10
464:10
365::
330:1
300:,
296:,
272:.
183:.
155:A
55:,
47:,
1901:)
1897:(
1267:e
1260:t
1253:v
1208:.
1184:.
1136:)
1105:)
927:s
925:I
848:B
845:d
835:=
824:)
811:+
801:+
782:+
769:(
749:=
738:)
729:d
726:a
723:o
720:l
715:Z
711:+
705:e
702:d
699:o
696:i
693:d
688:Z
684:+
678:e
675:c
672:r
669:u
666:o
663:s
658:Z
649:e
646:c
643:r
640:u
637:o
634:s
629:Z
625:+
619:d
616:a
613:o
610:l
605:Z
598:(
578:=
571:A
526:=
513:)
509:F
488:1
485:(
482:)
478:z
475:H
468:6
454:(
448:2
444:1
439:=
426:C
423:f
417:2
413:1
408:=
398:e
395:d
392:o
389:i
386:d
381:Z
91:)
85:(
80:)
76:(
62:.
20:)
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