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The
Schottky-junction is an attempt to increase the efficiency of solar cells by introducing an impurity energy level in the band gap. This impurity can absorb more lower energy photons, which improves the power conversion efficiency of the cell. This type of solar cell allows enhanced light trapping
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layer. Its function as a wide band-gap semiconductor helps planarize the anode surface, and helps maximum photon flux to reach the active layer. In this case, NiO thickness was also measured, and increasing the thickness decreases cell efficiency. In these cells, nickel oxide replaces
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semiconductor, CdSe has many applications in modern technology. Previous experiments using CdSe in solar cells resulted in a power-conversion efficiency of approximately 0.72%. Liang Li et al. propose using single cadmium selenide nanobelts-on-electrodes. This method uses
125:, or EBL, which provides a more efficient synthesis method to developing Schottky junction solar cells. Although this material does not provide a large power-conversion efficiency as of yet, the advent of simpler fabrication methods show promise in
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However, research has shown thin insulating layers between metal and semiconductors improve solar cell performance, generating interest in metal-insulator-semiconductor
Schottky junction solar cells. A thin insulating layer, such as
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of the metal and the conduction band of the semiconductor, an abrupt potential difference is created, instead of the smooth band transition observed across a p-n junction in a standard solar cell, and this is a
150:, resulting in a dramatic increases in performance while still maintaining stability of the cell. Compared to the cadmium selenide cell, nickel dioxide cells provide a power-conversion efficiency to 5.2%.
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Fan, Guifeng; Zhu, Hongwei; Wang, Kunlin; Wei, Jinquan; Li, Xinming; Shu, Qinke; Guo, Ning; Wu, Dehai (2011). "Graphene/Silicon
Nanowire Schottky Junction for Enhanced Light Harvesting".
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layer to prevent photo-current suppression. Sheng S. Li et al. for the first time show that an effective barrier height equal to the band gap energy can be realized if the thickness and
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Luque, Antonio; Martí, Antonio (1997). "Increasing the
Efficiency of Ideal Solar Cells by Photon Induced Transitions at Intermediate Levels".
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471:"p-Type semiconducting nickel oxide as an efficiency-enhancing anode interfacial layer in polymer bulk-heterojunction solar cells"
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Li, Liang; Lu, Hao; Deng, Kaimo (3 Dec 2012). "Single CdSe nanobelts-on-electrodes
Schottky junction solar cells".
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523:
Li, Sheng S. (Feb 1978). "Theoretical analysis of a novel MPN gallium arsenide
Schottky barrier solar cell".
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Irwin, Michael D.; Buchholz, Bruce; Hains, Alexander W.; Chang, Robert P. H.; Marks, Tobin J. (26 Feb 2008).
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applications. Further research is being conducted to increase the efficiency of cadmium selenide cells.
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density of the p-layer as well as the dopant density in the n substrate are properly chosen.
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Proceedings of the Royal
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Schottky junction solar cells can be constructed using many different material types.
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semiconductor layers sandwiched together, forming the source of built-in voltage (a
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Srivatava, S.; et al. (1980). "Efficiency of
Schottky Barrier Solar Cells".
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Proceedings of the
National Academy of Sciences of the United States of America
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and faster carrier transport compared to more conventional photovoltaic cells.
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cell can produce an efficiency of around 22%. This is considered an MIS, or
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poly(3,4-ethylenedioxythiophene) polystyrene sulfonate, or
193:"The Physics and Chemistry of the Schottky Barrier Height"
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When constructing bulk-heterojunction solar cells, p-type
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Pulfrey, David L. (1978). "MIS Solar Cells: A Review".
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Band diagram of p-n junction in standard solar cell
236:. Hoboken, New Jersey: John Wiley & Sons, Inc.
59:). Due to differing energy levels between the
29:Schottky-junction (Schottky-barrier) solar cell
43:necessary for charge separation. Traditional
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566:(2 ed.). Wiley-VCH. pp. 26–38.
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68:. Although vulnerable to higher rates of
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404:ACS Applied Materials & Interfaces
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326:IEEE Transactions on Electron Devices
249:"Theory of the Schottky Barrier Cell"
232:Partain, Larry; Fraas, Lewis (2010).
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247:Landsberg, P.T.; Klimpe, C. (1977).
234:Solar Cells and Their Applications
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444:Journal of Materials Chemistry A
88:by allowing the possibility of
564:Semiconductor Electrochemistry
158:Under the right conditions, a
92:to tunnel through this layer.
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164:metal-insulator-semiconductor
545:10.1016/0038-1101(78)90274-5
389:10.1103/physrevlett.78.5014
16:Schottky barrier solar cell
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562:Memming, Rüdiger (2000).
191:Tung, Raymond T. (2014).
123:electron-beam lithography
31:, an interface between a
525:Solid-State Electronics
496:10.1073/pnas.0711990105
369:Physical Review Letters
346:10.1109/t-ed.1978.19271
311:10.1002/pssa.2210580203
291:Physica Status Solidi A
197:Applied Physics Reviews
84:pair recombination and
66:Schottky height barrier
268:10.1098/rspa.1977.0058
166:, and requires a thin
80:, can reduce rates of
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572:10.1002/9783527613069
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537:1978SSEle..21..435L
487:2008PNAS..105.2783I
381:1997PhRvL..78.5014L
338:1978ITED...25.1308P
303:1980PSSAR..58..343S
209:2014ApPRv...1a1304T
70:thermionic emission
456:10.1039/C2TA00410K
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416:10.1021/am1010354
375:(26): 5014–5017.
332:(11): 1308–1317.
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90:minority carriers
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57:p-n junction
41:band bending
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607:Solar cells
61:Fermi level
45:solar cells
27:In a basic
178:References
148:PEDOT:PSS
601:Category
590:30162712
424:21323376
354:47296128
276:97366390
533:Bibcode
506:2268537
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116:. As a
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49:p-type
35:and a
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252:(PDF)
168:oxide
143:anode
33:metal
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420:PMID
51:and
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