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windows exposed that act as crystallographic template for the subsequent growth of the GaN layer (Figure 1). The new LEO film grows simultaneously from the GaN windows both vertically and at the same time extends laterally over the mask, forming wings of much lower density of structural defects (mostly treading dislocations). The wings can merge together to form a continuous GaN film, or remain separated by seams. Notably LEO process drastically reduces the defects in the laterally grown areas by filtering them out at the mask interface. LEO can be performed from the liquid phase or the vapor phase, depending on the material and the growth conditions via
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wings of low crystallographic defect density. The material grown laterally between the columns doesn’t touch the underlying seed film thus leaving it suspended without contact with the initial seed layer. The wings can merge to form a continuous film or remain separated by seams. As LEO, Pendeo epitaxy reduces the defects in the film thus avoiding the direct contact with the substrate, eliminating the lattice mismatch and the thermal mismatch stress. Pendeo epitaxy is mainly performed from the vapor phase and initially was mostly used for growing gallium nitride (GaN) structures.
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development of low defect density wide bandgap GaN layers, important for the microelectronics industry, but also for many other epitaxial materials systems (Si, SiC, diamond etc.). Modeling of the LEO and PE processes reveals improved stress/strain characteristics and the concomitant improved device characteristics. The strong microelectronics relevance of PE and PEO technologies to enable low density of dislocations in the layers was documented in numerous inventions and patents
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1361:, Zheleva, Tsvetanka; Thomson, Darren; Smith, Scott; Linthicum, Kevin; Gehrke, Thomas; Davis, Robert, "Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby", published 2001-07-24
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for the subsequent vertical and lateral growth of continuous PE GaN layers enabling two to four orders of magnitude lower density of dislocations. The film grows laterally from the side walls of the columns and extends horizontally over the substrate without touching the initial seed layer, forming
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important in chip manufacturing for development of high-power, high frequency, high temperature electronic devices . LEO and PE are technologies that are not limited to the wide bandgp GaN materials. Conventional epitaxial growth techniques of GaN on SiC, sapphire and Si are known to produce
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Initially PE was developed as an alternative technology and inverted approach to
Lateral Epitaxial Overgrowth (LEO) of GaN on SiC substrate . LEO involves growing a seed GaN layer of the material on the substrate, then etching a patterned mask on the surface of the seed layer, leaving some seed
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Pendeo epitaxy of GaN involves growing a continuous GaN film, commonly with high density of dislocations, as a seed layer on a substrate (SiC, sapphire or Si), then etching away portions from the GaN film (seed layer) thus leaving GaN seed stripes or columns. The subsequent PE layer grows
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In the case of GaN material system, LEO and PE technology was initiated in the late nineties and early 2000s in Prof. R.F. Davis group at NCSU. Numerous groups from US, Japan and Europe participated in the early development of these technologies as well. The PE and LEO is not limited to the
355:, in the order of 10-10 cm. PE and LEO, the latter also referred to epitaxial lateral overgrowth (ELO), are known to enable two to four orders of magnitude lower density of dislocations. Having device layers of low defect density enables improved device characteristics and performance .
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338:(SAG) Techniques, developed in the late 1990s and early 2000s for epitaxial growth of wide bandgap materials: gallium nitride (GaN) on silicon carbide (SiC) substrate. , GaN on sapphire (Al2O3) substrate , and GaN on silicon (Si) substrate .
1399:, Atwater, Jr., Harry A.; Zahler, James M.; Morral, Anna Fontcuberta i; Pinnington, Tom; Olson, Sean, "High efficiency solar cells utilizing wafer bonding and layer transfer to integrate non-lattice matched materials", published 2019-08-06
1437:, Kiyoku, Hiroyuki; Nakamura, Shuji; Kozaki, Tokuya; Iwasa, Naruhito; Chocho, Kazuyuki, "Nitride semiconductor growth method, nitride semiconductor substrate, and nitride semiconductor device", published 2006-08-01
703:
Chichibu, S. F.; Marchand, H.; Minsky, M. S.; Keller, S.; Fini, P. T.; Ibbetson, J. P.; Fleischer, S. B.; Speck, J. S.; Bowers, J. E.; Hu, E.; Mishra, U. K.; DenBaars, S. P.; Deguchi, T.; Sota, T.; Nakamura, S. (1999-03-08).
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1380:, Li, Jizhong; Lochtefeld, Anthony J., "Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication", published 2022-02-15
195:
tags using the button below. This will let reviewers know a new draft has been submitted in their area of interest. For instance, if you wrote about a female astronomer, you would want to add the
1342:, Davis, Robert; Nam, Ok-Hyun; Zheleva, Tsvetanka; Bremser, Michael, "Gallium nitride semiconductor structures including lateral gallium nitride layers", published 2003-05-27
664:
Zheleva, Tsvetanka S.; Smith, Scott A.; Thomson, Darren B.; Gehrke, Thomas; Linthicum, Kevin J.; Rajagopal, Pradeep; Carlson, Eric; Ashmawi, Waeil M.; Davis, Robert F. (1999-12-01).
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Davis, Robert F.; Gehrke, T; Linthicum, K.J.; Rajagopal, P; Roskowski, A.M.; Zheleva, T.; Preble, Edward A.; Zorman, C.A.; Mehregany, M.; Schwarz, U.; Schuck, J.; Grober, R. (2001).
942:
La Via, Francesco; Alquier, Daniel; Giannazzo, Filippo; Kimoto, Tsunenobu; Neudeck, Philip; Ou, Haiyan; Roncaglia, Alberto; Saddow, Stephen E.; Tudisco, Salvatore (June 2023).
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1418:, Li, Jizhong; Lochtefeld, Anthony J., "Light-emitter-based devices with lattice-mismatched semiconductor structures", published 2013-08-06
1456:, Koide, Norikatsu; Winner, Karl; Kuehn, Benjamin, "Method for manufacturing gallium nitride compound semiconductor", published 2004-11-16
1048:
Kum, Hyun; Lee, Doeon; Kong, Wei; Kim, Hyunseok; Park, Yongmo; Kim, Yunjo; Baek, Yongmin; Bae, Sang-Hoon; Lee, Kyusang; Kim, Jeehwan (October 2019).
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simultaneously from the tops and the side walls of the GaN stripes or columns (Figure 2). Thus, the tops and the side walls of these columns act as
895:
Woo, Kelly; Bian, Zhengliang; Noshin, Maliha; Perez
Martinez, Rafael; Malakoutian, Mohamadali; Shankar, Bhawani; Chowdhury, Srabanti (2024-04-01).
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Davis, Robert F.; Gehrke, T.; Linthicum, K. J.; Zheleva, T. S.; Preble, E. A.; Rajagopal, P.; Zorman, C. A.; Mehregany, M. (2001-05-01).
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627:"Review of Pendeo-Epitaxial Growth and Characterization of Thin Films of GaN and AlGaN Alloys on 6H-SiC(0001) and Si(111) Substrates"
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Zheleva, Tsvetanka S.; Smith, Scott A.; Thomson, Darren B.; Linthicum, Kevin J.; Rajagopal, Pradeep; Davis, Robert F. (April 1999).
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753:"Growth of high-quality GaN by low-pressure metal-organic vapour phase epitaxy (LP-MOVPE) from 3D islands and lateral overgrowth"
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Draft's lead section is laden with jargon and unintelligible to layperson readers. Needs to be rewritten before resubmitting. ~
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803:"Pendeo-epitaxial growth of thin films of gallium nitride and related materials and their characterization"
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Zheleva, Tsvetanka S.; Nam, Ok-Hyun; Ashmawi, Waeil M.; Griffin, Jason D.; Davis, Robert F. (2001-02-01).
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1222:"The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes"
706:"Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth"
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Nam, Ok-Hyun; Bremser, Michael D.; Zheleva, Tsvetanka S.; Davis, Robert F. (1997-11-03).
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Zheleva, Tsvetanka S.; Nam, Ok-Hyun; Bremser, Michael D.; Davis, Robert F. (1997-10-27).
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Fig.1 A schematic diagram of the lateral epitaxial overgrowth (LEO) of GaN.
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