78:
is harnessed to store, manipulate and read out bits of information, the proposal for valleytronics is to perform similar tasks using the multiple extrema of the band structure, so that the information of 0s and 1s would be stored as different discrete values of the
758:
Wu, Zefei; Zhou, Benjamin T.; Cai, Xiangbin; Cheung, Patrick; Liu, Gui-Bin; Huang, Meizhen; Lin, Jiangxiazi; Han, Tianyi; An, Liheng; Wang, Yuanwei; Xu, Shuigang; Long, Gen; Cheng, Chun; Law, Kam Tuen; Zhang, Fan (2019-02-05).
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114:
413:
1062:
878:"Field-induced polarization of Dirac valleys in bismuth". Zengwei Zhu, Aurélie Collaudin, Benoît Fauqué, Woun Kang and Kamran Behnia.
1041:"Spin valleytronics in silicene: Quantum spin Hall–quantum anomalous Hall insulators and single-valley semimetals". Motohiko Ezawa,
50:, and are known as multivalley semiconductors. Valleytronics is the technology of control over the valley degree of freedom, a
741:"Valley polarization in MoS2 monolayers by optical pumping". Hualing Zeng, Junfeng Dai, Wang Yao, Di Xiao and Xiaodong Cui.
1112:
39:
316:
Culcer, Dimitrie; et al. (2012). "Valley-Based Noise-Resistant
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1117:
477:
Crippa A; et al. (2015). "Valley blockade and multielectron spin-valley Kondo effect in silicon".
86:
Valleytronics may refer to other forms of quantum manipulation of valleys in semiconductors, including
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Rana, N.; Dixit, G. (2023). "All-optical ultrafast valley switching in two-dimensional materials".
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98:. First experimental evidence of valley blockade predicted in Ref. (which completes the set of
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Several theoretical proposals and experiments were performed in a variety of systems, such as
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376:"Universal quantum computing with spin and valley states". Niklas Rohling and Guido Burkard.
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395:"A valley–spin qubit in a carbon nanotube". E. A. Laird, F. Pei & L. P. Kouwenhoven.
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and Pauli spin blockade) has been observed in a single atom doped silicon transistor.
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Takashina, K. (2006). "Valley
Polarization in Si(100) at Zero Magnetic Field".
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A. Rycerz; et al. (2007). "Valley filter and valley valve in graphene".
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have multiple "valleys" in the electronic band structure of the first
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Behnia, Kamran (2012-07-01). "Polarized light boosts valleytronics".
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1063:"Experiments hint at a new type of electronics: valleytronics"
414:"Valley Blockade Quantum Switching in Silicon Nanostructures"
209:
Nebel, Christoph E. (2013). "Electrons dance in diamond".
761:"Intrinsic valley Hall transport in atomically thin MoS2"
74:. While in spintronics the internal degree of freedom of
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Source of the above: Zeng, H., Dai, J., Yao, W., et al.
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16:Experimental area in semiconductors
70:The term was coined in analogy to
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668:10.1103/PhysRevApplied.19.034056
1079:monolayers by optical pumping"
348:10.1103/PhysRevLett.108.126804
1:
927:10.1103/PhysRevLett.96.236801
30:) is an experimental area in
412:Prati, Enrico (2011-10-01).
1075:"Valley polarization in MoS
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721:10.1103/PhysRevB.96.245410
509:10.1103/PhysRevB.92.035424
292:10.1103/PhysRevB.74.155436
40:electronic band structure
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1089:490–493 (August 2012).
897:Physical Review Letters
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318:Physical Review Letters
100:Coulomb charge blockade
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1095:10.1038/nnano.2012.95
1083:Nature Nanotechnology
959:Nature Communications
765:Nature Communications
743:Nature Nanotechnology
615:10.1364/OPTICA.418152
440:10.1166/jnn.2011.4957
397:Nature Nanotechnology
160:Nature Nanotechnology
52:local maximum/minimum
868:doi:10.1038/nmat3694
34:that exploits local
981:2013NatCo...4.2069Y
919:2006PhRvL..96w6801T
831:2018NanoF...2c2001B
713:2017PhRvB..96x5410A
660:2023PhRvP..19c4056R
607:2021Optic...8..422M
554:2007NatPh...3..172R
501:2015PhRvB..92c5424C
340:2012PhRvL.108l6804C
284:2006PhRvB..74o5436G
223:2013NatMa..12..690N
172:2012NatNa...7..488B
96:quantum electronics
88:quantum computation
38:("valleys") in the
1032:, 081304(R)(2007).
989:10.1038/ncomms3069
866:, 760–764 (2013).
135:aluminium arsenide
90:with valley-based
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748:, 490–493 (2012).
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42:. Certain
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107:graphene
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336:Bibcode
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123:bismuth
119:diamond
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