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The DBG or "dice before grind" process is a way to separate dies without dicing. The separation occurs during the wafer thinning step. The wafers are initially diced using a half-cut dicer to a depth below the final target thickness. Next, the wafer is thinned to the target thickness while mounted
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of a separated chip of 150 μm thickness that was subjected to four laser scans, compare. The topmost defects are the best resolved and it is realized that a single laser pulse causes a defected crystal region that resembles the shape of candle flame. This shape is caused by the rapid melting and
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The size of the die left on the tape may range from 35 mm on a side (very large) to 0.1 mm square (very small). The die created may be any shape generated by straight lines, but they are typically rectangular or square-shaped. In some cases they can be other shapes as well depending on the
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Dicing of silicon wafers may also be performed by a laser-based technique, the so-called stealth dicing process. It works as a two-stage process in which defect regions are firstly introduced into the wafer by scanning the beam along intended cutting lines and secondly an underlying carrier membrane
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frame. Dicing tape has different properties depending on the dicing application. UV curable tapes are used for smaller sizes and non-UV dicing tape for larger die sizes. Dicing saws may use a dicing blade with diamond particles, rotating at 30,000 RPM and cooled with deionized water. Once a wafer
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and falls to ambient temperature again. The laser is typically pulsed by a frequency of about 100 kHz, while the wafer is moved with a velocity of about 1 m/s. A defected region of about 10 μm width is finally inscribed in the wafer, along which preferential fracture occurs under
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on a special adhesive film and then mounted on to a pick-up tape to hold the dies in place until they are ready for the packaging step. The benefit to the DBG process is higher die strength. Alternatively, plasma dicing may be used, which replaces the dicer's saw with
226:. The fracture is performed in the second step and operates by radially expanding the carrier membrane to which the wafer is attached. The cleavage initiates at the bottom and advances to the surface, so a high distortion density must be introduced at the bottom.
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applications. In addition, stealth dicing hardly generates debris and allows for improved exploitation of the wafer surface due to smaller kerf loss compared to wafer saw. Wafer grinding may be performed after this step, to reduce die thickness.
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The DBG process requires a back grinding tape that has the following attributes, 1) strong adhesive force (prevents infiltration of grinding fluid and die dust during grinding), 2) absorption and/or relief of compression stress and
208:. Defect regions of about 10 μm width are inscribed by multiple scans of the laser along the intended dicing lanes, where the beam is focused at different depths of the wafer. The figure displays an optical micrograph of a
122:, are typically about 75 micrometres (0.003 inch) wide. Once a wafer has been diced, the die will stay on the dicing tape until they are extracted by die-handling equipment, such as a
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Standard semiconductor manufacturing uses a "dicing after thinning" approach, where wafers are first thinned before they are diced. The wafer is ground down in a process called
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M. Kumagai; N. Uchiyama; E. Ohmura; R. Sugiura; K. Atsumi; K. Fukumitsu (August 2007). "Advanced Dicing
Technology for Semiconductor Wafer—Stealth Dicing".
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M. Kumagai; N. Uchiyama; E. Ohmura; R. Sugiura; K. Atsumi; K. Fukumitsu (2007). "Advanced Dicing
Technology for Semiconductor Wafer – Stealth Dicing".
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during grinding, 3) suppresses cracking due to contact between dies, 4) adhesive strength that can be greatly reduced through UV irradiation.
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of the irradiated region in the laser beam focus, where the temperature of only some μm small volumes suddenly rises to some 1000 K within
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E. Ohmura; F. Fukuyo; K. Fukumitsu; H. Morita (2006). "Internal modified layer formation mechanism into silicon with nanosecond laser".
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Journal of Vacuum
Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
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663:"Plasma Dicing Solutions of a Variety of Materials: From Silicon Wafers with Metal or Resin Layers, to Compound Semiconductors"
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71:. All methods are typically automated to ensure precision and accuracy. Following the dicing process the individual
233:. Dry dicing methods inevitably have to be applied for the preparation of certain microelectromechanical systems (
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Cross sectional micrograph of cleavage plane after stealth dicing a Si wafer of 150 μm thickness, compare Ref.
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singulation method used. A full-cut laser dicer has the ability to cut and separate in a variety of shapes.
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M. Birkholz; K.-E. Ehwald; M. Kaynak; T. Semperowitsch; B. Holz; S. Nordhoff (2010).
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584:"APX300 : Plasma Dicer - Industrial Devices & Solutions - Panasonic"
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It is the advantage of the stealth dicing process that it does not require a
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188:, the wavelength of which (1064 nm) is well adapted to the electronic
399:"Separation of extremely miniaturized medical sensors by IR laser dicing"
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297:"Die singulation technologies for advanced packaging: A critical review"
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substrate as a "bare die". The areas that have been cut away, called
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has been diced, the pieces left on the dicing tape are referred to as
620:"Example of plasma dicing process | Download Scientific Diagram"
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369:"Wafer Dicing Service | Wafer Backgrinding & Bonding Services"
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Lei, Wei-Sheng; Kumar, Ajay; Yalamanchili, Rao (2012-04-06).
602:"Plasma Dicing of Silicon & III-V (GaAs, InP & GaN)"
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which has a sticky backing that holds the wafer on a thin
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process. It can involve scribing and breaking, mechanical
704:"Plasma Dicing (Dice Before Grind) | Orbotech"
482:IEEE Transactions on Semiconductor Manufacturing
422:IEEE Transactions on Semiconductor Manufacturing
130:, further in the electronics assembly process.
93:During dicing, wafers are typically mounted on
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82:which are then suitable for use in building
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27:Step in manufacture of integrated circuits
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184:The first step operates with a pulsed
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722:http://www.lintec-usa.com/di_dbg.cfm
720:Products for DBG Process (LINTEC)
200:or 1117 nm), so that maximum
61:(normally with a machine called a
53:. Die singulation comes after the
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740:Semiconductor device fabrication
181:is expanded to induce fracture.
39:semiconductor device fabrication
566:"Plasma Dicing | Orbotech"
45:are separated from a finished
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634:"Plasma-Therm: Plasma Dicing"
530:"共通 | DISCO Corporation"
516:"共通 | DISCO Corporation"
546:. Semiconductor Dicing Tapes
544:"Semiconductor Dicing Tapes"
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460:J. Achiev. Mat. Manuf. Eng
343:"Key Wafer Sawing Factors"
137:(BSG) before it is diced.
345:. Optocap. Archived from
78:may be encapsulated into
588:industrial.panasonic.com
204:may well be adjusted by
144:Materials diced include
494:10.1109/TSM.2007.901849
434:10.1109/TSM.2007.901849
373:www.syagrussystems.com
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116:printed circuit board
37:, is the process in
638:www.plasmatherm.com
313:2012JVSTB..30d0801L
158:silicon on sapphire
224:mechanical loading
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135:back side grinding
686:"Resource Center"
403:J. Opto. Adv. Mat
321:10.1116/1.3700230
246:Dice before grind
16:(Redirected from
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488:(3): 259–265.
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349:on 21 May 2013
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231:cooling liquid
215:solidification
210:cleavage plane
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168:Stealth dicing
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33:, also called
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669:. Retrieved
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261:shear stress
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186:Nd:YAG laser
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35:wafer dicing
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18:Wafer dicing
219:nanoseconds
196:(1.11
152:, silicon,
120:die streets
99:sheet metal
95:dicing tape
671:2023-11-19
648:2019-05-26
466:: 381–384.
409:: 479–483.
378:2021-11-20
279:References
202:absorption
128:die sorter
124:die bonder
84:electronic
64:dicing saw
606:SAMCO Inc
329:2166-2746
88:computers
41:by which
734:Category
550:14 April
353:14 April
267:See also
190:band gap
162:ceramics
156:(GaAs),
502:6034954
442:6034954
309:Bibcode
194:silicon
160:(SoS),
150:alumina
90:, etc.
73:silicon
500:
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327:
59:sawing
666:(PDF)
498:S2CID
438:S2CID
146:glass
76:chips
67:) or
47:wafer
552:2013
355:2013
325:ISSN
253:DRIE
235:MEMS
112:dies
108:dice
43:dies
490:doi
430:doi
317:doi
192:of
126:or
110:or
104:die
49:of
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Text is available under the Creative Commons Attribution-ShareAlike License. Additional terms may apply.
