1144:
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44:
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Schottky's contributions in surface science/emission electronics and in semiconductor-device theory now form a significant and pervasive part of the background to these subjects. It could possibly be argued that – perhaps because they are in the area of technical physics – they are not as
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from the surface. Owing to the method of its derivation, this interaction is called the "image potential energy" (image PE). Schottky based his work on earlier work by
316:(23 July 1886 – 4 March 1976) was a German physicist who played a major early role in developing the theory of electron and ion emission phenomena, invented the
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along with Erwin
Gerlach. The idea was that a very fine ribbon suspended in a magnetic field could generate electric signals. This led to the invention of the
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When the whole behaviour of such interfaces is examined, it is found that they can act (asymmetrically) as a special form of electronic diode, now called a
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in 1882, and
Schottky was born four years later. The family then moved back to Germany in 1892, where his father took up an appointment at the
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honoring his ground-breaking work on the physical understanding of many phenomena that led to many important technical appliances, among them
1459:
1056:, it was suggested that a similar barrier should exist at the junction of a metal and a semiconductor. Such barriers are now widely known as
850:
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1095:(spontaneous current variations in high-vacuum discharge tubes, called by him the "Schrot effect": literally, the "small shot effect") in
832:(in the absence of any field) of the barrier. This leads to the following expression for the dependence of the barrier energy on distance
1505:
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relating to the image PE for a sphere. Schottky's image PE has become a standard component in simple models of the barrier to motion,
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had filed a claim earlier than either
Armstrong or Schottky, and eventually his patent was recognized in the US and Germany.
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In 1923 Schottky suggested (incorrectly) that the experimental phenomenon then called autoelectronic emission and now called
482:(1923–27). For two considerable periods of time, Schottky worked at the Siemens Research laboratories (1914–19 and 1927–58).
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along with Dr. Erwin
Gerlach in 1924 and later made many significant contributions in the areas of semiconductor devices,
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method of receiving wireless signals. 1962, he was awarded with the Carl-Friedrich-Gauss-Medal. In 1964 he received the
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417:(1851–1935). Schottky had one sister and one brother. His father was appointed professor of mathematics at the
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Pretzfeld Castle, where a
Siemens laboratory was founded in the 1940s for the Schottky research group.
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that may indicate he had invented and patented something similar in
Germany in 1918. The Frenchman
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until 1958. The physicist lived in
Pretzfeld until his death in 1976, where he was also buried.
1394:(in German and English). Fraunhofer Institute for Integrated Systems and Device Technology IISB
1022:. Applying the field causes lowering of the barrier, and thus enhances the emission current in
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374:(also Langmuir-Schottky space charge law) were named after him. He conducted research on
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Sein Leben und Werk bis ins Jahr 1941. Diepholz; Stuttgart; Berlin: GNT-Verlag, 2008.
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776:{\displaystyle {\frac {d^{2}}{dx^{2}}}\Psi (x)={\frac {2m}{\hbar ^{2}}}M(x)\Psi (x).}
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Reinhard W. Serchinger: Walter
Schottky – Atomtheoretiker und Elektrotechniker.
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Schottky, Walter (October 1926). "On the Origin of the Super-Heterodyne Method".
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resulted when the barrier was pulled down to zero. In fact, the effect is due to
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In 1914, Schottky developed the well-known classical formula, written here as
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by using it in the reverse order, but it was not practical until high flux
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Icons of
Invention: The Makers of the Modern World from Gutenberg to Gates
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616:{\displaystyle E_{\rm {int}}(x)=-{\frac {q^{2}}{16\pi \epsilon _{0}{x}}}}
502:
991:; in the case of the metal-vacuum interface, this is sometimes called a
654:), experienced by an electron on approaching a metal surface or a metal–
501:-Werke in the castle of Pretzfeld in 1946 until 1955, then he worked in
666:) is the quantity that appears when the one-dimensional, one-particle,
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939:{\displaystyle M(x)=\;h-eFx-e^{2}/4\pi \epsilon _{0}\epsilon _{r}x\;.}
980:
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265:
1067:. In this context, the metal–semiconductor junction is known as a "
821:
The image PE is usually combined with terms relating to an applied
1142:
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Fraunhofer
Institute for Integrated Systems and Device Technology
836:, measured from the "electrical surface" of the metal, into the
462:, 'About Relative-Theoretical Energetics and Dynamics'.
478:(1919–23). He became a professor of theoretical physics at the
445:
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has now become the standard model for the tunneling barrier.
1014:(SN barrier) has played an important role in the theories of
1510:
1123:
The invention of superheterodyne is usually attributed to
358:(where the depletion layer occurring in it is called the
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are named after him. The Walter Schottky House of the
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in physics at this university in 1912, studying under
271:
Zur relativtheoretischen Energetik und Dynamik (1912)
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This computes the interaction energy between a point
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1099:and his invention of the screen-grid tetrode and a
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Time-symmetric interpretations of quantum mechanics
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1371:(in German). Hessische Biografie. 28 November 2023
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428:Schottky graduated from the Steglitz Gymnasium in
1486:"Walter Schottky - Biography, Facts and Pictures"
1127:. However, Schottky published an article in the
1030:", and the resulting emission regime is called "
638:metal surface, when the charge is at a distance
1075:generally well recognized as they ought to be.
459:Zur relativtheoretischen Energetik und Dynamik
394:, which were important for the development of
8:
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470:Schottky's postdoctoral period was spent at
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370:(a peak value of the heat capacity) and the
1582:Academic staff of the University of Rostock
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1203:, Julius Springer, Berlin, Germany, 1929.
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1171:and the Walter Schottky Building of the
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1187:is located in the Schottky-Street in
7:
1572:Humboldt University of Berlin alumni
525:became available in the late 1930s.
485:His research group moved in 1943 to
1175:Georg-Simon-Ohm-Hochschule NĂĽrnberg
999:has to be taken equal to the local
474:(1912–14). He then lectured at the
442:Frederick William University Berlin
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513:In 1924, Schottky co-invented the
25:
1592:German expatriates in Switzerland
1577:Werner von Siemens Ring laureates
1091:in 1936 for his discovery of the
658:interface from the inside. (This
1256:(in German). Deutsche Biographie
1163:for outstanding achievements in
285:
42:
1506:Biography of Walter H. Schottky
1369:"„Schottky, Friedrich Hermann""
1211:Akademische Verlagsgesellschaft
1567:20th-century German physicists
1183:are also named after him. The
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444:in 1908, and he completed his
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529:Major scientific achievements
243:Siemens Research Laboratories
1229:Schottky junction solar cell
985:metal–semiconductor junction
27:German physicist (1886-1976)
1562:German electrical engineers
1608:
1448:Klooster, John W. (2009),
1427:10.1109/JRPROC.1926.221074
1392:"History of the Institute"
1234:Surface-barrier transistor
955:elementary positive charge
456:, with a thesis entitled:
432:in 1904. He completed his
415:Friedrich Hermann Schottky
1532:Schottky's math genealogy
1454:, ABC-CLIO, p. 414,
1207:Physik der GlĂĽhelektroden
1195:Books written by Schottky
1153:Walter Schottky Institute
1052:Later, in the context of
1043:wave-mechanical tunneling
1012:Schottky–Nordheim barrier
993:Schottky–Nordheim barrier
323:in 1915 while working at
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1547:Semiconductor physicists
1511:Walter Schottky Institut
1349:. Hifi World. April 2008
179:Theory of field emission
1520:German National Library
1347:"Historically Speaking"
1254:"Schottky, Walter Hans"
1179:of Applied Sciences in
1129:Proceedings of the IEEE
1105:Werner von Siemens Ring
1039:field electron emission
1020:field electron emission
808:reduced Planck constant
670:is written in the form
396:copper oxide rectifiers
206:Werner von Siemens Ring
167:Screen-grid vacuum tube
1415:Proceedings of the IRE
1323:University of Maryland
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1169:RWTH Aachen University
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1026:. This is called the "
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799:{\displaystyle \hbar }
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476:University of WĂĽrzburg
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410:Schottky's father was
372:Mott-Schottky equation
249:University of WĂĽrzburg
245:(1912–1914, 1927–1958)
155:Mott–Schottky equation
1161:Walter Schottky Prize
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1054:semiconductor devices
977:relative permittivity
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480:University of Rostock
423:University of Marburg
255:University of Rostock
995:. In many contexts,
983:). In the case of a
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668:Schrödinger equation
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419:University of Zurich
314:Walter Hans Schottky
121:University of Berlin
58:Walter Hans Schottky
1488:. Famous Scientists
1296:1976PhT....29f..63W
1224:Schottky transistor
1165:solid state physics
1097:thermionic emission
1083:He was awarded the
1024:thermionic emission
1016:thermionic emission
987:, this is called a
348:thermionic emission
1516:Walter H. Schottky
1317:Taylord, Leonard.
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519:ribbon loudspeaker
472:University of Jena
333:ribbon loudspeaker
327:, co-invented the
237:University of Jena
187:Solid state ionics
175:Ribbon loudspeaker
159:Mott–Schottky plot
151:Schottky–Mott rule
36:Walter H. Schottky
1461:978-0-313-34743-6
1304:10.1063/1.3023533
1280:"Walter Schottky"
1159:research and the
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966:electric constant
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48:Schottky, c. 1920
16:(Redirected from
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