292:
266:(DFT) studies were clouded by band gap errors and overly delocalized defect levels, and more advanced DFT studies refute most of the previous predictions of ferromagnetism. Likewise, it has been shown that for most of the oxide based materials studies for magnetic semiconductors do not exhibit an intrinsic
257:
ZnO and GaN doped by Co and Mn, respectively. These predictions were followed of a flurry of theoretical and experimental studies of various oxide and nitride semiconductors, which apparently seemed to confirm room temperature ferromagnetism in nearly any semiconductor or insulator material heavily
400:
is high enough to prepare the materials in bulk, while some other materials have so low solubility of dopants that to prepare them with high enough dopant concentration thermal nonequilibrium preparation mechanisms have to be employed, e.g. growth of
1340:
Philip, J.; Punnoose, A.; Kim, B. I.; Reddy, K. M.; Layne, S.; Holmes, J. O.; Satpati, B.; LeClair, P. R.; Santos, T. S. (April 2006). "Carrier-controlled ferromagnetism in transparent oxide semiconductors".
1498:
Lany, Stephan; Raebiger, Hannes; Zunger, Alex (2008-06-03). "Magnetic interactions of Cr − Cr and Co − Co impurity pairs in ZnO within a band-gap corrected density functional approach".
114:
0.14 eV), materials scientists generally predict that magnetic semiconductors will only find widespread use if they are similar to well-developed semiconductor materials. To that end,
1751:
Frandsen, Benjamin A.; Gong, Zizhou; Terban, Maxwell W.; Banerjee, Soham; Chen, Bijuan; Jin, Changqing; Feygenson, Mikhail; Uemura, Yasutomo J.; Billinge, Simon J. L. (2016-09-06).
475:
Several examples of proposed ferromagnetic semiconductor materials are listed below. Notice that many of the observations and/or predictions below remain heavily debated.
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67:
properties. If implemented in devices, these materials could provide a new type of control of conduction. Whereas traditional electronics are based on control of
1002:
Dietl, T.; Ohno, H.; Matsukura, F.; Cibert, J.; Ferrand, D. (February 2000). "Zener model description of ferromagnetism in zinc-blende magnetic semiconductors".
956:
Ohno, H.; Shen, A.; Matsukura, F.; Oiwa, A.; Endo, A.; Katsumoto, S.; Iye, Y. (1996-07-15). "(Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs".
1659:
Lee, Y. F.; Wu, F.; Kumar, R.; Hunte, F.; Schwartz, J.; Narayan, J. (2013). "Epitaxial integration of dilute magnetic semiconductor Sr3SnO with Si (001)".
1815:
1814:
Cabot, Andreu; Puntes, Victor F.; Shevchenko, Elena; Yin, Yadong; Balcells, Lluís; Marcus, Matthew A.; Hughes, Steven M.; Alivisatos, A. Paul (2007).
1541:
Martínez-Boubeta, C.; Beltrán, J. I.; Balcells, Ll.; Konstantinović, Z.; Valencia, S.; Schmitz, D.; Arbiol, J.; Estrade, S.; Cornil, J. (2010-07-08).
278:
remains the only semiconductor material with robust coexistence of ferromagnetism persisting up to rather high Curie temperatures around 100–200 K.
1593:
Jambois, O.; Carreras, P.; Antony, A.; Bertomeu, J.; Martínez-Boubeta, C. (2011-12-01). "Resistance switching in transparent magnetic MgO films".
309:
1099:
J. M. D. Coey, P. Stamenov, R. D. Gunning, M. Venkatesan, and K. Paul (2010). "Ferromagnetism in defect-ridden oxides and related materials".
230:
charge carriers. Ever since, ferromagnetic signals have been measured from various semiconductor hosts doped with different transition atoms.
1932:
1219:
408:
Permanent magnetization has been observed in a wide range of semiconductor based materials. Some of them exhibit a clear correlation between
46:
1262:
905:
Munekata, H.; Ohno, H.; von Molnar, S.; Segmüller, Armin; Chang, L. L.; Esaki, L. (1989-10-23). "Diluted magnetic III-V semiconductors".
412:
and magnetization, including the work of T. Story and co-workers where they demonstrated that the ferromagnetic Curie temperature of
356:
433:
375:
1400:
Raebiger, Hannes; Lany, Stephan; Zunger, Alex (2008-07-07). "Control of
Ferromagnetism via Electron Doping in In 2 O 3 : Cr".
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1942:
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would be higher, between 100 and 200 K. However, many of the semiconductor materials studied exhibit a permanent magnetization
122:) have recently been a major focus of magnetic semiconductor research. These are based on traditional semiconductors, but are
335:
242:
showed that a modified Zener model for magnetism well describes the carrier dependence, as well as anisotropic properties of
515:, ferromagnetic at room temperature. The ferromagnetism appears to be mediated by carrier-electrons, in a similar way as the
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31:
671:, with a Curie temperature of 69K. The curie temperature can be more than doubled by doping (e.g. oxygen deficiency, Gd).
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instead of, or in addition to, electronically active elements. They are of interest because of their unique
123:
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1639:"New room-temperature magnetic semiconductor material holds promise for 'spintronics' data-storage devices"
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56:
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have generated huge interest among the scientific community as a strong candidate for the fabrication of
17:
1451:
Kittilstved, Kevin; Schwartz, Dana; Tuan, Allan; Heald, Steve; Chambers, Scott; Gamelin, Daniel (2006).
1148:
43:
Can we build materials that show properties of both ferromagnets and semiconductors at room temperature?
1217:
L. M. C. Pereira (2017). "Experimentally evaluating the origin of dilute magnetism in nanomaterials".
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applications. In particular, ZnO-based DMS with properties such as transparency in visual region and
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1753:"Local atomic and magnetic structure of dilute magnetic semiconductor ( Ba , K ) ( Zn , Mn ) 2 As 2"
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Assadi, M.H.N; Hanaor, D.A.H (2013). "Theoretical study on copper's energetics and magnetism in TiO
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698:: Ferromagnetic semiconductor with tetragonal average structure and orthorhombic local structure.
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transparent MgO films with cation vacancies, combining ferromagnetism and multilevel switching (
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and other metals, which provide only ~50% polarization), which is an important property for
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452:. If there is an insufficient hole concentration in the magnetic semiconductor, then the
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phase of this material has further been predicted to exhibit favorable dilute magnetism.
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Ogale, S.B (2010). "Dilute doping, defects, and ferromagnetism in metal oxide systems".
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1055:"The quest for dilute ferromagnetism in semiconductors: Guides and misguides by theory"
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to the semiconductor host material. A lot of the elusive extrinsic ferromagnetism (or
150:) are among the best candidates for industrial DMS due to their multifunctionality in
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1874:"Epitaxial Growth and Properties of Doped Transition Metal and Complex Oxide Films"
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1696:"Epitaxial Growth and Properties of Doped Transition Metal and Complex Oxide Films"
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Fukumura, T; Toyosaki, H; Yamada, Y (2005). "Magnetic oxide semiconductors".
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The manufacturability of the materials depend on the thermal equilibrium
79:), practical magnetic semiconductors would also allow control of quantum
1453:"Direct Kinetic Correlation of Carriers and Ferromagnetism in Co2+: ZnO"
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605:-doped rutile and iron-doped anatase, ferromagnetic at room temperature
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Ohno, H. (1998). "Making
Nonmagnetic Semiconductors Ferromagnetic".
460:. However, if the hole concentration is high (>~10 cm), then the
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1816:"Vacancy Coalescence during Oxidation of Iron Nanoparticles"
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properties with possible technological applications. Doped
83:(up or down). This would theoretically provide near-total
1170:"Carrier-concentration–induced ferromagnetism in PbSnMnTe"
472:) is observed in thin films or nanostructured materials.
396:
in the base material. E.g., solubility of many dopants in
716:
Furdyna, J.K. (1988). "Diluted magnetic semiconductors".
659:) – Dilute magnetic semiconductor. Can be synthesized an
1168:
Story, T.; Gała̧zka, R.; Frankel, R.; Wolff, P. (1986).
246:. The same theory also predicted that room-temperature
1053:
Alex Zunger, Stephan Lany and Hannes
Raebiger (2010).
448:
in the prototypical magnetic semiconductor, Mn-doped
316:. Unsourced material may be challenged and removed.
102:While many traditional magnetic materials, such as
1543:"Ferromagnetism in transparent thin films of MgO"
218:). These materials exhibited reasonably high
8:
1153:: CS1 maint: multiple names: authors list (
519:ferromagnetism is mediated by carrier-holes.
106:, are also semiconductors (magnetite is a
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432:. The theory proposed by Dietl required
376:Learn how and when to remove this message
18:ZnO-based diluted magnetic semiconductors
1823:Journal of the American Chemical Society
456:would be very low or would exhibit only
226:) that scales with the concentration of
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214:(the latter is commonly referred to as
27:Type of functional semiconducting oxide
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270:ferromagnetism as postulated by Dietl
1220:Journal of Physics D: Applied Physics
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841:
7:
1289:Semiconductor Science and Technology
314:adding citations to reliable sources
63:(or a similar response) and useful
47:(more unsolved problems in physics)
1263:"Muons in Magnetic Semiconductors"
25:
644:, with Curie temperature at 340 K
637:, with Curie temperature at 340 K
290:
301:needs additional citations for
1422:10.1103/PhysRevLett.101.027203
116:dilute magnetic semiconductors
32:Bipolar magnetic semiconductor
1:
1477:10.1103/PhysRevLett.97.037203
1265:. Triumf.info. Archived from
1133:10.1088/1367-2630/12/5/053025
1024:10.1126/science.287.5455.1019
647:Strontium-doped tin dioxide (
238:The pioneering work of Dietl
1933:Semiconductor material types
773:10.1126/science.281.5379.951
663:thin film on a silicon chip.
1872:Chambers, Scott A. (2010).
1694:Chambers, Scott A. (2010).
927:10.1103/PhysRevLett.63.1849
583:), ferromagnetic above 400
262:impurities. However, early
38:Unsolved problem in physics
1959:
1788:10.1103/PhysRevB.94.094102
1595:Solid State Communications
1570:10.1103/PhysRevB.82.024405
1520:10.1103/PhysRevB.77.241201
1319:10.1088/0268-1242/20/4/012
1196:10.1103/PhysRevLett.56.777
854:Journal of Applied Physics
596:, ferromagnetic above 400
191:were the first to measure
29:
1615:10.1016/j.ssc.2011.10.009
428:can be controlled by the
264:Density functional theory
1241:10.1088/1361-6463/aa801f
325:"Magnetic semiconductor"
250:should exist in heavily
1943:Ferromagnetic materials
1661:Applied Physics Letters
1457:Physical Review Letters
1402:Physical Review Letters
1175:Physical Review Letters
958:Applied Physics Letters
907:Physical Review Letters
860:(23): 233913–233913–5.
200:compound semiconductors
57:semiconductor materials
53:Magnetic semiconductors
1899:10.1002/adma.200901867
1721:10.1002/adma.200901867
1102:New Journal of Physics
816:10.1002/adma.200903891
470:phantom ferromagnetism
504:Oxide semiconductors
430:carrier concentration
187:and his group at the
167:light-emitting diodes
138:metal oxides such as
1082:10.1103/Physics.3.53
310:improve this article
195:in transition metal
1890:2010AdM....22..219C
1829:(34): 10358–10360.
1779:2016PhRvB..94i4102F
1712:2010AdM....22..219C
1673:2013ApPhL.103k2101L
1607:2011SSCom.151.1856J
1562:2010PhRvB..82b4405M
1512:2008PhRvB..77x1201L
1469:2006PhRvL..97c7203K
1414:2008PhRvL.101b7203R
1355:2006NatMa...5..298P
1311:2005SeScT..20S.103F
1233:2017JPhD...50M3002P
1188:1986PhRvL..56..777S
1125:2010NJPh...12e3025C
1073:2010PhyOJ...3...53Z
1016:2000Sci...287.1019D
970:1996ApPhL..69..363O
919:1989PhRvL..63.1849M
876:2013JAP...113w3913A
808:2010AdM....22.3125O
765:1998Sci...281..951O
730:1988JAP....64...29F
110:semiconductor with
95:applications, e.g.
1878:Advanced Materials
1700:Advanced Materials
796:Advanced Materials
669:Europium(II) oxide
220:Curie temperatures
59:that exhibit both
1835:10.1021/ja072574a
1757:Physical Review B
1681:10.1063/1.4820770
1601:(24): 1856–1859.
1550:Physical Review B
1500:Physical Review B
1010:(5455): 1019–22.
913:(17): 1849–1852.
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684:aluminium nitride
499:indium antimonide
462:Curie temperature
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308:Please help
303:verification
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52:
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1938:Spintronics
642:tin dioxide
640:Iron-doped
635:tin dioxide
629:Tin dioxide
222:(yet below
210:doped with
132:spintronics
93:spintronics
1927:Categories
1864:2009-11-20
1770:1608.02684
1645:2013-09-17
1624:2445/50485
1579:2445/33086
1273:2010-09-19
724:(4): R29.
703:References
538:zinc oxide
529:zinc oxide
523:Zinc oxide
403:thin films
398:zinc oxide
390:solubility
336:newspapers
185:Hideo Ohno
142:(ZnO) and
140:zinc oxide
81:spin state
30:See also:
1797:2469-9950
1528:1098-0121
1430:0031-9007
1371:1476-1122
1249:126213268
1116:1003.5558
986:0003-6951
935:0031-9007
867:1304.1854
661:epitaxial
555:memristor
480:Manganese
466:extrinsic
366:July 2007
282:Materials
274:To date,
258:doped by
212:manganese
173:doped TiO
108:semimetal
104:magnetite
1908:20217685
1851:13430331
1843:17676738
1730:20217685
1485:16907540
1438:18764222
1387:30009354
1379:16547517
1327:96727752
1204:10033282
1141:55748696
1040:19672003
1032:10669409
943:10040689
892:94599250
832:25307693
824:20535732
590:Chromium
202:such as
169:, while
1916:5415994
1886:Bibcode
1775:Bibcode
1738:5415994
1708:Bibcode
1669:Bibcode
1603:Bibcode
1558:Bibcode
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1060:Physics
1012:Bibcode
1004:Science
966:Bibcode
915:Bibcode
872:Bibcode
804:Bibcode
781:9703503
761:Bibcode
753:Science
726:Bibcode
677:Nitride
622:anatase
620:-doped
613:anatase
611:-doped
592:-doped
581:anatase
571:-doped
511:-doped
482:-doped
446:dopants
416:-doped
392:of the
350:scholar
179:anatase
177:in the
112:bandgap
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618:Nickel
609:Copper
594:rutile
577:rutile
575:(both
569:Cobalt
551:p-type
534:n-type
517:GaMnAs
492:GaMnAs
394:dopant
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276:GaMnAs
272:et al.
252:p-type
244:GaMnAs
240:et al.
234:Theory
228:p-type
216:GaMnAs
171:copper
77:p-type
1912:S2CID
1858:(PDF)
1847:S2CID
1819:(PDF)
1765:arXiv
1734:S2CID
1546:(PDF)
1383:S2CID
1323:S2CID
1297:arXiv
1245:S2CID
1137:S2CID
1111:arXiv
1036:S2CID
888:S2CID
862:arXiv
828:S2CID
649:SrSnO
438:holes
357:JSTOR
343:books
255:doped
197:doped
126:with
124:doped
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1200:PMID
1155:link
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982:ISSN
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820:PMID
777:PMID
603:Iron
579:and
509:iron
486:and
450:GaAs
329:news
206:and
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146:(TiO
89:iron
55:are
1894:doi
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