751:(MD), important behaviors of NEMS devices can be predicted via computational modeling before engaging in experiments. Additionally, combining continuum and MD techniques enables engineers to efficiently analyze the stability of NEMS devices without resorting to ultra-fine meshes and time-intensive simulations. Simulations have other advantages as well: they do not require the time and expertise associated with fabricating NEMS devices; they can effectively predict the interrelated roles of various electromechanical effects; and parametric studies can be conducted fairly readily as compared with experimental approaches. For example, computational studies have predicted the charge distributions and “pull-in” electromechanical responses of NEMS devices. Using simulations to predict mechanical and electrical behavior of these devices can help optimize NEMS device design parameters.
658:
expectedly corresponds with its experimentally verified independence to relative humidity. PDMS’ adhesive forces are also independent of rest time, capable of versatilely performing under varying relative humidity conditions, and possesses a lower coefficient of friction than that of
Silicon. PDMS coatings facilitate mitigation of high-velocity problems, such as preventing sliding. Thus, friction at contact surfaces remains low even at considerably high velocities. In fact, on the microscale, friction reduces with increasing velocity. The hydrophobicity and low friction coefficient of PDMS have given rise to its potential in being further incorporated within NEMS experiments that are conducted at varying relative humidities and high relative sliding velocities.
791:
material, surface films, and lubricant. In comparison to undoped Si or polysilicon films, SiC films possess the lowest frictional output, resulting in increased scratch resistance and enhanced functionality at high temperatures. Hard diamond-like carbon (DLC) coatings exhibit low friction, high hardness and wear resistance, in addition to chemical and electrical resistances. Roughness, a factor that reduces wetting and increases hydrophobicity, can be optimized by increasing the contact angle to reduce wetting and allow for low adhesion and interaction of the device to its environment.
654:
non-fluorescent, biocompatible, and nontoxic. Inherent to polymers, the Young's
Modulus of PDMS can vary over two orders of magnitude by manipulating the extent of crosslinking of polymer chains, making it a viable material in NEMS and biological applications. PDMS can form a tight seal with silicon and thus be easily integrated into NEMS technology, optimizing both mechanical and electrical properties. Polymers like PDMS are beginning to gain attention in NEMS due to their comparatively inexpensive, simplified, and time-efficient prototyping and manufacturing.
795:
nano-materials are determined by using a nano indenter on a material that has undergone fabrication processes. These measurements, however, do not consider how the device will operate in industry under prolonged or cyclic stresses and strains. The theta structure is a NEMS model that exhibits unique mechanical properties. Composed of Si, the structure has high strength and is able to concentrate stresses at the nanoscale to measure certain mechanical properties of materials.
605:
comparison of performance parameters between carbon nanotube (CNT)-based NEMS switches with its counterpart CMOS revealed that CNT-based NEMS switches retained performance at lower levels of energy consumption and had a subthreshold leakage current several orders of magnitude smaller than that of CMOS switches. CNT-based NEMS with doubly clamped structures are being further studied as potential solutions for floating gate nonvolatile memory applications.
821:
demonstrated for diamond, achieving a processing level comparable to that of silicon. The focus is currently shifting from experimental work towards practical applications and device structures that will implement and profit from such novel devices. The next challenge to overcome involves understanding all of the properties of these carbon-based tools, and using the properties to make efficient and durable NEMS with low failure rates.
774:
considered by packaging design to align with the design of the MEMS or NEMS component. Delamination analysis, motion analysis, and life-time testing have been used to assess wafer-level encapsulation techniques, such as cap to wafer, wafer to wafer, and thin film encapsulation. Wafer-level encapsulation techniques can lead to improved reliability and increased yield for both micro and nanodevices.
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618:. Similarly, other changes to the electronic and mechanical attributes of carbon based materials must fully be explored before their implementation, especially because of their high surface area which can easily react with surrounding environments. Carbon nanotubes were also found to have varying conductivities, being either metallic or semiconducting depending on their
209:
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improving yield, scarcity of information, and reproducibility issues have been identified as major challenges to achieving higher levels of reliability for NEMS devices. Such challenges arise during both manufacturing stages (i.e. wafer processing, packaging, final assembly) and post-manufacturing stages (i.e. transportation, logistics, usage).
299:," there are many potential applications of machines at smaller and smaller sizes; by building and controlling devices at smaller scales, all technology benefits. The expected benefits include greater efficiencies and reduced size, decreased power consumption and lower costs of production in electromechanical systems.
550:
factor as high as 2400. The quality factor describes the purity of tone of the resonator's vibrations. Furthermore, it has been theoretically predicted that clamping graphene membranes on all sides yields increased quality numbers. Graphene NEMS can also function as mass, force, and position sensors.
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Adhesion and friction can also be manipulated by nanopatterning to adjust surface roughness for the appropriate applications of the NEMS device. Researchers from Ohio State
University used atomic/friction force microscopy (AFM/FFM) to examine the effects of nanopatterning on hydrophobicity, adhesion,
734:
The emerging field of bio-hybrid systems combines biological and synthetic structural elements for biomedical or robotic applications. The constituting elements of bio-nanoelectromechanical systems (BioNEMS) are of nanoscale size, for example DNA, proteins or nanostructured mechanical parts. Examples
549:
Nanomechanical resonators are frequently made of graphene. As NEMS resonators are scaled down in size, there is a general trend for a decrease in quality factor in inverse proportion to surface area to volume ratio. However, despite this challenge, it has been experimentally proven to reach a quality
478:. This allows fabrication of much smaller structures, albeit often at the cost of limited control of the fabrication process. Furthermore, while there are residue materials removed from the original structure for the top-down approach, minimal material is removed or wasted for the bottom-up approach.
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Reliability provides a quantitative measure of the component's integrity and performance without failure for a specified product lifetime. Failure of NEMS devices can be attributed to a variety of sources, such as mechanical, electrical, chemical, and thermal factors. Identifying failure mechanisms,
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since they can carry high current densities. This is a useful property as wires to transfer current are another basic building block of any electrical system. Carbon nanotubes have specifically found so much use in NEMS that methods have already been discovered to connect suspended carbon nanotubes
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Material properties are size-dependent. Therefore, analyzing the unique characteristics on NEMS and nano-scale material becomes increasingly important to retaining reliability and long-term stability of NEMS devices. Some mechanical properties, such as hardness, elastic modulus, and bend tests, for
636:
Graphene's mechanical and electronic properties have made it favorable for integration into NEMS accelerometers, such as small sensors and actuators for heart monitoring systems and mobile motion capture. The atomic scale thickness of graphene provides a pathway for accelerometers to be scaled down
622:
when processed. Because of this, special treatment must be given to the nanotubes during processing to assure that all of the nanotubes have appropriate conductivities. Graphene also has complicated electric conductivity properties compared to traditional semiconductors because it lacks an energy
803:
To increase reliability of structural integrity, characterization of both material structure and intrinsic stresses at appropriate length scales becomes increasingly pertinent. Effects of residual stresses include but are not limited to fracture, deformation, delamination, and nanosized structural
782:
Assessing the reliability of NEMS in early stages of the manufacturing process is essential for yield improvement. Forms of surface forces, such as adhesion and electrostatic forces, are largely dependent on surface topography and contact geometry. Selective manufacturing of nano-textured surfaces
653:
A study conducted by Ohio State researchers compared the adhesion and friction parameters of a single crystal silicon with native oxide layer against PDMS coating. PDMS is a silicone elastomer that is highly mechanically tunable, chemically inert, thermally stable, permeable to gases, transparent,
640:
By suspending a silicon proof mass on a double-layer graphene ribbon, a nanoscale spring-mass and piezoresistive transducer can be made with the capability of currently produced transducers in accelerometers. The spring mass provides greater accuracy, and the piezoresistive properties of graphene
773:
Packaging challenges often account for 75–95% of the overall costs of MEMS and NEMS. Factors of wafer dicing, device thickness, sequence of final release, thermal expansion, mechanical stress isolation, power and heat dissipation, creep minimization, media isolation, and protective coatings are
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Rest time has been characterized to directly correlate with adhesive force, and increased relative humidity lead to an increase of adhesive forces for hydrophilic polymers. Contact angle measurements and
Laplace force calculations support the characterization of PDMS's hydrophobic nature, which
820:
Key hurdles currently preventing the commercial application of many NEMS devices include low-yields and high device quality variability. Before NEMS devices can actually be implemented, reasonable integrations of carbon based products must be created. A recent step in that direction has been
790:
Due to its large surface area to volume ratio and sensitivity, adhesion and friction can impede performance and reliability of NEMS devices. These tribological issues arise from natural down-scaling of these tools; however, the system can be optimized through the manipulation of the structural
811:
Atomic force microscopy (AFM) and Raman spectroscopy can be used to characterize the distribution of residual stresses on thin films in terms of force volume imaging, topography, and force curves. Furthermore, residual stress can be used to measure nanostructures’ melting temperature by using
604:
A major disadvantage of MEMS switches over NEMS switches are limited microsecond range switching speeds of MEMS, which impedes performance for high speed applications. Limitations on switching speed and actuation voltage can be overcome by scaling down devices from micro to nanometer scale. A
613:
Despite all of the useful properties of carbon nanotubes and graphene for NEMS technology, both of these products face several hindrances to their implementation. One of the main problems is carbon's response to real life environments. Carbon nanotubes exhibit a large change in electronic
529:
Both graphene and diamond exhibit high Young's modulus, low density, low friction, exceedingly low mechanical dissipation, and large surface area. The low friction of CNTs, allow practically frictionless bearings and has thus been a huge motivation towards practical applications of CNTs as
696:
In addition to its inherent properties discussed in the
Materials section, PDMS can be used to absorb chloroform, whose effects are commonly associated with swelling and deformation of the micro-diaphragm; various organic vapors were also gauged in this study. With good aging stability and
681:(SiNWs) to detect chloroform vapor at room temperature. In the presence of chloroform vapor, the PDMS film on the micro-diaphragm absorbs vapor molecules and consequently enlarges, leading to deformation of the micro-diaphragm. The SiNWs implanted within the micro-diaphragm are linked in a
596:
to other nanostructures. This allows carbon nanotubes to form complicated nanoelectric systems. Because carbon based products can be properly controlled and act as interconnects as well as transistors, they serve as a fundamental material in the electrical components of NEMS.
538:, and high-frequency oscillators. Carbon nanotubes and graphene's physical strength allows carbon based materials to meet higher stress demands, when common materials would normally fail and thus further support their use as a major materials in NEMS technological development.
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and friction for hydrophilic polymers with two types of patterned asperities (low aspect ratio and high aspect ratio). Roughness on hydrophilic surfaces versus hydrophobic surfaces are found to have inversely correlated and directly correlated relationships respectively.
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and essentially changes all the rules for how electrons move through a graphene based device. This means that traditional constructions of electronic devices will likely not work and completely new architectures must be designed for these new electronic devices.
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Along with the mechanical benefits of carbon based materials, the electrical properties of carbon nanotubes and graphene allow it to be used in many electrical components of NEMS. Nanotransistors have been developed for both carbon nanotubes as well as graphene.
641:
converts the strain from acceleration to electrical signals for the accelerometer. The suspended graphene ribbon simultaneously forms the spring and piezoresistive transducer, making efficient use of space in while improving performance of NEMS accelerometers.
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Fan, X.; Fischer, A.C.; Forsberg, F.; Lemme, M.C.; Niklaus, F.; Östling, M.; Rödjegård, H.; Schröder, S.; Smith, A.D.; Wagner, S. (September 2019). "Graphene ribbons with suspended masses as transducers in ultra-small nanoelectromechanical accelerometers".
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approaches, in contrast, use the chemical properties of single molecules to cause single-molecule components to self-organize or self-assemble into some useful conformation, or rely on positional assembly. These approaches utilize the concepts of molecular
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Failures arising from high adhesion and friction are of concern for many NEMS. NEMS frequently utilize silicon due to well-characterized micromachining techniques; however, its intrinsic stiffness often hinders the capability of devices with moving parts.
685:, which translates the deformation into a quantitative output voltage. In addition, the micro-diaphragm sensor also demonstrates low-cost processing at low power consumption. It possesses great potential for scalability, ultra-compact footprint, and
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Residual stresses can influence electrical and optical properties. For instance, in various photovoltaic and light emitting diodes (LED) applications, the band gap energy of semiconductors can be tuned accordingly by the effects of residual stress.
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tips. The increased sensitivity achieved by NEMS leads to smaller and more efficient sensors to detect stresses, vibrations, forces at the atomic level, and chemical signals. AFM tips and other detection at the nanoscale rely heavily on NEMS.
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reduces contact area, improving both adhesion and friction performance for NEMS. Furthermore, the implementation of nanopost to engineered surfaces increase hydrophobicity, leading to a reduction in both adhesion and friction.
216:
SiT8008, a programmable oscillator reaching quartz precision with high reliability and low g-sensitivity. The nanoscale transistors and nanoscale mechanical components (on a separate die) are integrated on the same chip
2783:
Loh, O; Wei, X; Ke, C; Sullivan, J; Espinosa, HD (2011). "Robust carbon-nanotube-based nano-electromechanical devices: Understanding and eliminating prevalent failure modes using alternative electrode materials".
414:). Further devices have been described by Stefan de Haan. In 2007, the International Technical Roadmap for Semiconductors (ITRS) contains NEMS memory as a new entry for the Emerging Research Devices section.
3011:
Baek, C. W.; Bhushan, B.; Kim, Y. K.; Li, X.; Takashima, K. (October–November 2003). "Mechanical characterization of micro/nanoscale structures for MEMS/NEMS applications using nanoindentation techniques".
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and thermal treatments, to manufacture devices. While being limited by the resolution of these methods, it allows a large degree of control over the resulting structures. In this manner devices such as
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Zou, M.; Cai, L.; Wang, H.; Yang, D.; Wyrobek, T. (2005). "Adhesion and friction studies of a selectively micro/nano-textured surface produced by UV assisted crystallization of amorphous silicon".
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Bunch, J. S.; Van Der Zande, A. M.; Verbridge, S. S.; Frank, I. W.; Tanenbaum, D. M.; Parpia, J. M.; Craighead, H. G.; McEuen, P. L. (2007). "Electromechanical
Resonators from Graphene Sheets".
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Davari, Bijan; Ting, Chung-Yu; Ahn, Kie Y.; Basavaiah, S.; Hu, Chao-Kun; Taur, Yuan; Wordeman, Matthew R.; Aboelfotoh, O.; Krusin-Elbaum, L.; Joshi, Rajiv V.; Polcari, Michael R. (1987).
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Packaging
410:(VLSI) NEMS device was demonstrated by researchers at IBM. Its premise was an array of AFM tips which can heat/sense a deformable substrate in order to function as a memory device (
895:. Further capabilities of NEMS-based cantilevers have been exploited for the applications of sensors, scanning probes, and devices operating at very high frequency (100 MHz).
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include the facile top-down nanostructuring of thiol-ene polymers to create cross-linked and mechanically robust nanostructures that are subsequently functionalized with proteins.
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are one of the basic building blocks for all electronic devices, so by effectively developing usable transistors, carbon nanotubes and graphene are both very crucial to NEMS.
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Despont, M; Brugger, J.; Drechsler, U.; Dürig, U.; Häberle, W.; Lutwyche, M.; Rothuizen, H.; Stutz, R.; Widmer, R. (2000). "VLSI-NEMS chip for parallel AFM data storage".
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process compatibility. By switching the vapor-absorption polymer layer, similar methods can be applied that should theoretically be able to detect other organic vapors.
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Hermann, S; Ecke, R; Schulz, S; Gessner, T (2008). "Controlling the formation of nanoparticles for definite growth of carbon nanotubes for interconnect applications".
514:. This is mainly because of the useful properties of carbon based materials which directly meet the needs of NEMS. The mechanical properties of carbon (such as large
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3135:"Residual stress, intermolecular force, and frictional properties distribution maps of diamond films for micro-and nano-electromechanical (M/NEMS) applications"
2060:
Yousif, M.Y.A.; Lundgren, P.; Ghavanini, F.; Enoksson, P.; Bengtsson, S. (2008). "CMOS considerations in nanoelectromechanical carbon nanotube-based switches".
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Hisamoto, D.; Kaga, T.; Kawamoto, Y.; Takeda, E. (December 1989). "A fully depleted lean-channel transistor (DELTA)-a novel vertical ultra thin SOI MOSFET".
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A combination of these approaches may also be used, in which nanoscale molecules are integrated into a top-down framework. One such example is the carbon
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Tao, Y.; Boss, J. M.; Moores, B. A.; Degen, C. L. (2014). "Single-crystal diamond nanomechanical resonators with quality factors exceeding one million".
994:
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Chaudhry, A.N.; Billingham, N.C. (2001). "Characterisation and oxidative degradation of a room-temperature vulcanised poly (dimethylsiloxane) rubber".
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585:") angles, and the combination of the rolling angle and radius decides whether the nanotube has a bandgap (semiconducting) or no bandgap (metallic).
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Li, M.; Tang, H.X.; Roukes, M.L. (2007). "Ultra-sensitive NEMS-based cantilevers for sensing, scanned probe and very high-frequency applications".
2201:
Ebbesen, T. W.; Lezec, H. J.; Hiura, H.; Bennett, J. W.; Ghaemi, H. F.; Thio, T. (1996). "Electrical conductivity of individual carbon nanotubes".
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facilitates unambiguous and efficient nanodevice readout. The functionalization of the device's surface using a thin polymer coating with high
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Osborn, W. A., Mclean, M., Smith, D. T., Gerbig, Y. (2017, November). Nanoscale
Strength Measurements and Standards. NIST. Retrieved from
1172:
3511:
3315:
824:
Carbon-based materials have served as prime materials for NEMS use, because of their exceptional mechanical and electrical properties.
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Technical Digest. MEMS 2002 IEEE International
Conference. Fifteenth IEEE International Conference on Micro Electro Mechanical Systems
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PDMS is frequently used within NEMS technology. For instance, PDMS coating on a diaphragm can be used for chloroform vapor detection.
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Collins, PG; Bradley, K; Ishigami, M; Zettl, A (2000). "Extreme oxygen sensitivity of electronic properties of carbon nanotubes".
1644:
Dekker, Cees; Tans, Sander J.; Verschueren, Alwin R. M. (1998). "Room-temperature transistor based on a single carbon nanotube".
670:
116:
2370:
Tambe, N.S.; Bhushan, B. (2005). "Micro/nanotribological characterization of PDMS and PMMA used for BioMEMS/NEMS applications".
2609:"Numerical Analysis of Nanotube Based NEMS Devices — Part II: Role of Finite Kinematics, Stretching and Charge Concentrations"
3308:
2112:
1442:
Tao, Ye; Degen, Christian (2013). "Facile
Fabrication of Single-Crystal-Diamond Nanostructures with Ultrahigh Aspect Ratio".
233:
2649:
Garcia, J. C.; Justo, J. F. (2014). "Twisted ultrathin silicon nanowires: A possible torsion electromechanical nanodevice".
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have shown to be a key platform to design tunable NEMS owing to the availability of active modulation of Young's modulus.
439:
188:
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Keblinski, P.; Nayak, S.; Zapol, P.; Ajayan, P. (2002). "Charge
Distribution and Stability of Charged Carbon Nanotubes".
2745:
Ke, C; Espinosa, HD (2006). "In situ electron microscopy electromechanical characterization of a bistable NEMS device".
2397:
Guo, H.; Lou, L.; Chen, X.; Lee, C. (2012). "PDMS-coated piezoresistive NEMS diaphragm for chloroform vapor detection".
407:
2300:
McDonald, J.C.; Whitesides, G.M. (2002). "Poly (dimethylsiloxane) as a material for fabricating microfluidic devices".
2560:"Numerical Analysis of Nanotube-Based NEMS Devices—Part I: Electrostatic Charge Distribution on Multiwalled Nanotubes"
1597:
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Bhushan, B. (March 2007). "Nanotribology and nanomechanics of MEMS/NEMS and BioMEMS/BioNEMS materials and devices".
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Two complementary approaches to fabrication of NEMS can be found, the top-down approach and the bottom-up approach.
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layers. For top-down approaches, increasing surface area to volume ratio enhances the reactivity of nanomaterials.
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The first silicon dioxide field effect transistors were built by Frosch and Derick in 1957 at Bell Labs. In 1960,
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Barton, R.A.; Ilic, B.; Van Der Zande, A.M.; Whitney, W.S.; McEuen, P.L.; Parpia, J.M.; Craighead, H.G. (2011).
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Huang, X.M.H.; Zorman, C.A.; Mehregany, M.; Roukes, M.L. (2003). "Nanodevice motion at microwave frequencies".
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Computer simulations have long been important counterparts to experimental studies of NEMS devices. Through
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appropriate packaging, the degradation rate of PDMS in response to heat, light, and radiation can be slowed.
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Arab, A.; Feng, Q. (2014). "Reliability research on micro-and nano-electromechanical systems: a review".
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Ekinci, K.L.; Huang, X.M.H.; Roukes, M.L. (2004). "Ultrasensitive nanoelectromechanical mass detection".
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880:
872:
475:
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Shafagh, Reza; Vastesson, Alexander; Guo, Weijin; van der Wijngaart, Wouter; Haraldsson, Tommy (2018).
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up to very high frequencies (VHF). It is incorporation of electronic displacement transducers based on
260:, and a high surface-to-volume ratio useful for surface-based sensing mechanisms. Applications include
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Fowler, J.; Moon, H.; Kim, C.J. (2002). "Enhancement of mixing by droplet-based microfluidics".
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Mamin, H.J.; Rugar, D. (2001). "Sub-attonewton force detection at millikelvin temperatures".
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changes, which can result in failure of operation and physical deterioration of the device.
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differential scanning calorimetry (DSC) and temperature dependent X-ray Diffraction (XRD).
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Introduction to Nanoscale Science and Technology (Nanostructure Science and Technology)
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2111:
Rueckes, T.; Kim, K.; Joselevich, E.; Tseng, G.Y.; Cheung, C.L.; Lieber, C.M. (2000).
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range, leading to low mass, high mechanical resonance frequencies, potentially large
149:
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Van Spengen, W.M. (2003). "MEMS reliability from a failure mechanisms perspective".
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1984:"Direct wiring of carbon nanotubes for integration in nanoelectromechanical systems"
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research team that demonstrated the first MOSFET with a 10 nm oxide thickness.
228:) are a class of devices integrating electrical and mechanical functionality on the
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A die shot (after metallization/ IC interconnect removal) of the digital die of the
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1788:"High, size-dependent quality factor in an array of graphene mechanical resonators"
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2469:"E-Beam Nanostructuring and Direct Click Biofunctionalization of Thiol–Ene Resist"
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from micro to nanoscale while retaining the system's required sensitivity levels.
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2113:"Carbon nanotube-based nonvolatile random access memory for molecular computing"
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Ali, Utku Emre; Modi, Gaurav; Agarwal, Ritesh; Bhaskaran, Harish (2022-03-18).
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3185:"Real-time nanomechanical property modulation as a framework for tunable NEMS"
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570:, metallic), (10,2) CNT (semiconducting) and (10,10) CNT (armchair, metallic)
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3234:
3033:
2805:
2797:
2766:
2758:
2731:
2492:
2321:
2187:
2144:
2089:
2046:
1982:
Bauerdick, S.; Linden, A.; Stampfer, C.; Helbling, T.; Hierold, C. (2006).
1960:
1822:
1711:
1585:
1577:
1522:
1471:
1463:
1417:
1266:"NEMS—emerging products and applications of nano-electromechanical systems"
912:"SiTime SiT8008 - MEMS oscillator : Weekend die-shot : ZeptoBars"
208:
3161:
834:
The global market of NEMS is projected to reach $ 108.88 million by 2022.
1858:
892:
716:
624:
578:
511:
241:
86:
3300:
1738:"Fabrication and performance of graphene nanoelectromechanical systems"
1690:
Westervelt, R. M. (2008). "APPLIED PHYSICS: Graphene Nanoelectronics".
1409:
503:
375:
2635:
2586:
2537:
2313:
2007:
1910:
1875:
1814:
1764:
1362:"Difference Between Top Down and Bottom Up Approach in Nanotechnology"
976:
961:"Surface Protection and Selective Masking during Diffusion in Silicon"
3109:
Nanotechnology research: new nanostructures, nanotubes and nanofibers
2222:
615:
582:
567:
535:
499:
371:
323:
315:
213:
2038:
1324:
Massimiliano Ventra; Stephane Evoy; James R. Heflin (30 June 2004).
2274:
883:
for the targeted species enables NEMS-based cantilevers to provide
677:(PDMS)-coated nanoelectromechanical system diaphragm embedded with
522:
conductivities of carbon based materials allow them to function as
244:, pumps, or motors, and may thereby form physical, biological, and
2883:
Pieters, P. (2005). "Wafer level packaging of micro/nanosystems".
2663:
1665:
1392:
1215:
710:
662:
PDMS-coated piezoresistive nanoelectromechanical systems diaphragm
588:
557:
518:) are fundamental to the stability of NEMS while the metallic and
498:
Many of the commonly used materials for NEMS technology have been
207:
232:. NEMS form the next logical miniaturization step from so-called
686:
383:
339:
3304:
2519:"Static and Dynamic Analysis of Carbon Nanotube-Based Switches"
1209:"The Breakthrough Advantage for FPGAs with Tri-Gate Technology"
2821:
The International Journal of Advanced Manufacturing Technology
374:. The FinFET originates from the research of Digh Hisamoto at
355:
3133:
Gupta, S.; Williams, O. A.; Patel, R. J.; Haenen, K. (2006).
1926:"Approaching the quantum limit of a nanomechanical resonator"
1066:
1987 Symposium on VLSI Technology. Digest of Technical Papers
3062:
Residual stress evaluation and modelling at the micron scale
591:
carbon nanotubes have also been proposed for nanoelectronic
236:, or MEMS devices. NEMS typically integrate transistor-like
2778:
2776:
2607:
Ke, Changhong; Espinosa, Horacio D.; Pugno, Nicola (2005).
1924:
LaHaye, M.D.; Buu, O.; Camarota, B.; Schwab, K.C. (2004).
1143:
International Technical Digest on Electron Devices Meeting
1033:
Handbook of Nanophysics: Nanoelectronics and Nanophotonics
248:. The name derives from typical device dimensions in the
3047:
1304:
1062:"Submicron Tungsten Gate MOSFET with 10 nm Gate Oxide"
2512:
2510:
1120:. Springer Science & Business Media. p. 11.
3405:
3345:
3338:
1736:Barton, R.A.; Parpia, J.; Craighead, H.G. (2011).
2860:Springer Handbook of Experimental Solid Mechanics
2517:Dequesnes, Marc; Tang, Zhi; Aluru, N. R. (2004).
1685:
1683:
1558:Philosophical Transactions of the Royal Society A
1183:Institute of Electrical and Electronics Engineers
1327:Introduction to Nanoscale Science and Technology
2526:Journal of Engineering Materials and Technology
849:Nanoelectromechanical systems mass spectrometer
1612:
1610:
3316:
1437:
1435:
1356:
1354:
1029:"Chapter 13: Metal Nanolayer-Base Transistor"
996:Semiconductor Devices: Physics and Technology
189:
8:
2558:Ke, Changhong; Espinosa, Horacio D. (2005).
1745:Journal of Vacuum Science & Technology B
923:
921:
27:Class of devices for nanoscale functionality
2295:
2293:
1731:
1729:
1373:
1371:
1095:. Symposium on VLSI Technology Short Course
3567:
3342:
3323:
3309:
3301:
1988:Journal of Vacuum Science and Technology B
1544:
1542:
1540:
1087:"FinFET: History, Fundamentals and Future"
196:
182:
29:
3224:
2662:
2273:
1857:
1391:
1281:
581:. When rolled at specific and discrete ("
326:. In 1962, Atalla and Kahng fabricated a
3101:
3099:
2346:Principles and applications of tribology
1117:FinFETs and Other Multi-Gate Transistors
2856:"A brief introduction to MEMS and NEMS"
1173:"IEEE Andrew S. Grove Award Recipients"
903:
855:Nanoelectromechanical-based cantilevers
530:constitutive elements in NEMS, such as
158:
130:
72:
44:
37:
3423:Differential technological development
965:Journal of The Electrochemical Society
887:measurements at room temperature with
2885:5th IEEE Conference on Nanotechnology
2246:"A Nano-Scale Graphene Accelerometer"
1077:
1075:
7:
1314:. Itrs.net. Retrieved on 2012-11-24.
297:There's Plenty of Room at the Bottom
122:List of semiconductor scale examples
3512:Future-oriented technology analysis
1551:"Nanomechanics of carbon nanotubes"
632:Nanoelectromechanical accelerometer
376:Hitachi Central Research Laboratory
3249:"Global Market of NEMS projection"
1092:University of California, Berkeley
861:California Institute of Technology
755:Reliability and Life Cycle of NEMS
390:fabricated FinFET devices down to
370:channel length, starting with the
25:
2442:Polymer Degradation and Stability
1239:Sensors and Actuators A: Physical
959:Frosch, C. J.; Derick, L (1957).
3566:
671:National University of Singapore
165:
117:Semiconductor device fabrication
562:Band structures computed using
33:Part of a series of articles on
2862:. Springer. pp. 203–228.
2384:10.1016/j.ultramic.2005.06.050
2082:10.1088/0957-4484/19/28/285204
442:approach uses the traditional
382:, a group led by Hisamoto and
234:microelectromechanical systems
1:
3539:Technology in science fiction
3378:Nanoelectromechanical systems
3142:Journal of Materials Research
3090:10.1016/S0026-2714(03)00119-7
3026:10.1016/S0304-3991(03)00077-9
2724:10.1103/PhysRevLett.89.255503
2454:10.1016/S0141-3910(01)00139-2
2302:Accounts of Chemical Research
2244:Grolms, M. (September 2019).
2180:10.1126/science.287.5459.1801
1251:10.1016/S0924-4247(99)00254-X
566:approximation for (6,0) CNT (
431:Approaches to miniaturization
422:A key application of NEMS is
295:in his famous talk in 1959, "
222:Nanoelectromechanical systems
3078:Microelectronics Reliability
3065:(PhD). University of Oxford.
2616:Journal of Applied Mechanics
2567:Journal of Applied Mechanics
2399:IEEE Electron Device Letters
1027:Pasa, André Avelino (2010).
408:very-large-scale integration
332:metal–semiconductor junction
18:Nanoelectromechanical system
2986:Microelectronic Engineering
2681:10.1209/0295-5075/108/36006
2137:10.1126/science.289.5476.94
1619:Microelectronic Engineering
1549:Kis, A.; Zettl, A. (2008).
844:Nanoelectromechanical relay
645:Polydimethylsiloxane (PDMS)
614:properties when exposed to
73:Solid-state nanoelectronics
54:Molecular scale electronics
45:Single-molecule electronics
3616:
3544:Technology readiness level
3480:Technological unemployment
3388:Thermal copper pillar bump
3209:10.1038/s41467-022-29117-7
2961:10.1109/MEMSYS.2002.984099
1270:Nanotechnology Perceptions
1178:IEEE Andrew S. Grove Award
760:Reliability and Challenges
704:
280:
3562:
3527:Technological singularity
3487:Technological convergence
2998:10.1016/j.mee.2006.10.059
2955:. IEEE. pp. 97–100.
2930:10.1007/s11249-005-7791-3
2893:10.1109/NANO.2005.1500710
2858:. In Sharpe, W.N. (ed.).
2833:10.1007/s00170-014-6095-x
2284:10.1038/s41928-019-0287-1
1631:10.1016/j.mee.2008.06.019
1283:10.4024/N14HA06.ntp.02.03
932:; Evoy, Stephane (2004).
554:Metallic carbon nanotubes
452:electron-beam lithography
287:History of nanotechnology
2887:. IEEE. pp. 130–3.
2419:10.1109/LED.2012.2195152
2248:. Advanced Science News.
398:channel length in 1998.
3492:Technological evolution
3465:Exploratory engineering
2704:Physical Review Letters
2485:10.1021/acsnano.8b03709
2349:(2nd ed.). Wiley.
1953:10.1126/science.1094419
1891:Applied Physics Letters
1846:Applied Physics Letters
1704:10.1126/science.1156936
1515:10.1126/science.1136836
1151:10.1109/IEDM.1989.74182
1039:. pp. 13–1, 13–4.
930:Ventra, Massimiliano Di
827:Recently, nanowires of
600:CNT-based NEMS switches
424:atomic force microscope
418:Atomic force microscopy
3502:Technology forecasting
3497:Technological paradigm
3470:Proactionary principle
3284:10.1038/nnano.2006.208
2798:10.1002/smll.201001166
2759:10.1002/smll.200600271
1578:10.1098/rsta.2007.2174
1464:10.1002/adma.201301343
1114:Colinge, J.P. (2008).
928:Hughes, James E. Jr.;
863:developed a NEM-based
731:
571:
264:and sensors to detect
218:
172:Electronics portal
3428:Disruptive innovation
3373:Molecular electronics
3332:Emerging technologies
3264:Nature Nanotechnology
3189:Nature Communications
3162:10.1557/jmr.2006.0372
1380:Nature Communications
881:partition coefficient
869:mechanical resonances
859:Researchers from the
714:
669:Researchers from the
561:
476:molecular recognition
281:Further information:
211:
3475:Technological change
3418:Collingridge dilemma
3363:Flexible electronics
3106:Huang, X.J. (2008).
3059:Salvati, E. (2017).
3048:https://www.nist.gov
2854:Crone, W.C. (2008).
2343:Bhushan, B. (2013).
1264:de Haan, S. (2006).
1189:on September 9, 2018
1145:. pp. 833–836.
938:. Berlin: Springer.
829:chalcogenide glasses
675:polydimethylsiloxane
502:based, specifically
346:with a thickness of
59:Molecular logic gate
3532:Technology scouting
3507:Accelerating change
3276:2007NatNa...2..114L
3201:2022NatCo..13.1464A
3154:2006JMatR..21.3037G
2716:2002PhRvL..89y5503K
2673:2014EL....10836006G
2628:2005JAM....72..726K
2579:2005JAM....72..721K
2411:2012IEDL...33.1078G
2215:1996Natur.382...54E
2172:2000Sci...287.1801C
2129:2000Sci...289...94R
2074:2008Nanot..19B5204Y
2000:2006JVSTB..24.3144B
1945:2004Sci...304...74L
1903:2001ApPhL..79.3358M
1868:2004ApPhL..84.4469E
1807:2011NanoL..11.1232B
1757:2011JVSTB..29e0801B
1658:1998Natur.393...49T
1570:2008RSPTA.366.1591K
1564:(1870): 1591–1611.
1507:2007Sci...315..490B
1456:2013AdM....25.3962T
1402:2014NatCo...5.3638T
745:continuum mechanics
406:In 2000, the first
266:chemical substances
3549:Technology roadmap
2262:Nature Electronics
1444:Advanced Materials
1410:10.1038/ncomms4638
1310:2015-12-28 at the
749:molecular dynamics
732:
721:biological machine
707:Biological machine
572:
483:nanotube nanomotor
360:Multi-gate MOSFETs
254:quantum mechanical
219:
131:Related approaches
3582:
3581:
3401:
3400:
3119:978-1-60021-902-3
2918:Tribology Letters
2869:978-0-387-26883-5
2827:(9–12): 1679–90.
2636:10.1115/1.1985435
2587:10.1115/1.1985434
2538:10.1115/1.1751180
2479:(10): 9940–9946.
2356:978-1-118-40301-3
2314:10.1021/ar010110q
2008:10.1116/1.2388965
1911:10.1063/1.1418256
1876:10.1063/1.1755417
1815:10.1021/nl1042227
1765:10.1116/1.3623419
1698:(5874): 324–325.
1625:(10): 1979–1983.
1501:(5811): 490–493.
1337:978-1-4020-7720-3
1085:(June 11, 2012).
1083:Tsu-Jae King, Liu
1068:. pp. 61–62.
977:10.1149/1.2428650
945:978-1-4020-7720-3
891:at less than one
799:Residual stresses
683:Wheatstone bridge
679:silicon nanowires
494:Carbon allotropes
258:zero point motion
206:
205:
16:(Redirected from
3607:
3600:Applied sciences
3570:
3569:
3517:Horizon scanning
3433:Ephemeralization
3343:
3325:
3318:
3311:
3302:
3296:
3295:
3259:
3253:
3252:
3245:
3239:
3238:
3228:
3180:
3174:
3173:
3139:
3130:
3124:
3123:
3112:. Nova Science.
3103:
3094:
3093:
3073:
3067:
3066:
3056:
3050:
3044:
3038:
3037:
3020:(1–4): 481–494.
3008:
3002:
3001:
2981:
2975:
2974:
2948:
2942:
2941:
2913:
2907:
2906:
2880:
2874:
2873:
2851:
2845:
2844:
2816:
2810:
2809:
2780:
2771:
2770:
2742:
2736:
2735:
2699:
2693:
2692:
2666:
2646:
2640:
2639:
2613:
2604:
2598:
2597:
2595:
2589:. Archived from
2564:
2555:
2549:
2548:
2546:
2540:. Archived from
2523:
2514:
2505:
2504:
2464:
2458:
2457:
2437:
2431:
2430:
2394:
2388:
2387:
2378:(1–4): 238–247.
2367:
2361:
2360:
2340:
2334:
2333:
2297:
2288:
2287:
2277:
2256:
2250:
2249:
2241:
2235:
2234:
2223:10.1038/382054a0
2198:
2192:
2191:
2166:(5459): 1801–4.
2155:
2149:
2148:
2108:
2102:
2101:
2057:
2051:
2050:
2022:
2016:
2015:
2010:. Archived from
1979:
1973:
1972:
1930:
1921:
1915:
1914:
1886:
1880:
1879:
1861:
1859:cond-mat/0402528
1841:
1835:
1834:
1792:
1783:
1777:
1776:
1742:
1733:
1724:
1723:
1687:
1678:
1677:
1641:
1635:
1634:
1614:
1605:
1604:
1602:
1596:. Archived from
1555:
1546:
1535:
1534:
1490:
1484:
1483:
1439:
1430:
1429:
1395:
1375:
1366:
1365:
1358:
1349:
1348:
1346:
1344:
1321:
1315:
1302:
1296:
1295:
1285:
1261:
1255:
1254:
1234:
1228:
1227:
1225:
1223:
1213:
1205:
1199:
1198:
1196:
1194:
1185:. Archived from
1169:
1163:
1162:
1138:
1132:
1131:
1111:
1105:
1104:
1102:
1100:
1079:
1070:
1069:
1057:
1051:
1050:
1024:
1018:
1017:
1002:(2nd ed.).
1001:
987:
981:
980:
956:
950:
949:
925:
916:
915:
908:
725:protein dynamics
575:Carbon nanotubes
508:carbon nanotubes
444:microfabrication
412:Millipede memory
395:
256:effects such as
246:chemical sensors
240:with mechanical
198:
191:
184:
170:
169:
112:Multigate device
30:
21:
3615:
3614:
3610:
3609:
3608:
3606:
3605:
3604:
3595:Nanoelectronics
3585:
3584:
3583:
3578:
3558:
3397:
3358:Electronic nose
3334:
3329:
3299:
3261:
3260:
3256:
3247:
3246:
3242:
3182:
3181:
3177:
3148:(12): 3037–46.
3137:
3132:
3131:
3127:
3120:
3105:
3104:
3097:
3075:
3074:
3070:
3058:
3057:
3053:
3045:
3041:
3014:Ultramicroscopy
3010:
3009:
3005:
2983:
2982:
2978:
2971:
2950:
2949:
2945:
2915:
2914:
2910:
2903:
2882:
2881:
2877:
2870:
2853:
2852:
2848:
2818:
2817:
2813:
2782:
2781:
2774:
2744:
2743:
2739:
2701:
2700:
2696:
2648:
2647:
2643:
2611:
2606:
2605:
2601:
2593:
2562:
2557:
2556:
2552:
2544:
2521:
2516:
2515:
2508:
2466:
2465:
2461:
2439:
2438:
2434:
2396:
2395:
2391:
2372:Ultramicroscopy
2369:
2368:
2364:
2357:
2342:
2341:
2337:
2299:
2298:
2291:
2258:
2257:
2253:
2243:
2242:
2238:
2209:(6586): 54–56.
2200:
2199:
2195:
2157:
2156:
2152:
2123:(5476): 94–97.
2110:
2109:
2105:
2059:
2058:
2054:
2039:10.1038/421496a
2024:
2023:
2019:
1981:
1980:
1976:
1939:(5667): 74–77.
1928:
1923:
1922:
1918:
1897:(20): 3358–60.
1888:
1887:
1883:
1852:(22): 4469–71.
1843:
1842:
1838:
1790:
1785:
1784:
1780:
1740:
1735:
1734:
1727:
1689:
1688:
1681:
1652:(6680): 49–52.
1643:
1642:
1638:
1616:
1615:
1608:
1600:
1553:
1548:
1547:
1538:
1492:
1491:
1487:
1441:
1440:
1433:
1377:
1376:
1369:
1360:
1359:
1352:
1342:
1340:
1338:
1323:
1322:
1318:
1312:Wayback Machine
1303:
1299:
1263:
1262:
1258:
1236:
1235:
1231:
1221:
1219:
1211:
1207:
1206:
1202:
1192:
1190:
1171:
1170:
1166:
1140:
1139:
1135:
1128:
1113:
1112:
1108:
1098:
1096:
1081:
1080:
1073:
1059:
1058:
1054:
1047:
1026:
1025:
1021:
1014:
999:
989:
988:
984:
958:
957:
953:
946:
927:
926:
919:
910:
909:
905:
901:
889:mass resolution
857:
840:
818:
801:
780:
771:
762:
757:
741:
709:
703:
664:
647:
634:
611:
602:
556:
516:Young's modulus
496:
491:
433:
420:
404:
393:
334:(M–S junction)
293:Richard Feynman
289:
279:
274:
238:nanoelectronics
202:
164:
154:
126:
92:Nanolithography
68:
64:Molecular wires
39:Nanoelectronics
28:
23:
22:
15:
12:
11:
5:
3613:
3611:
3603:
3602:
3597:
3587:
3586:
3580:
3579:
3577:
3576:
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3560:
3559:
3557:
3556:
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3541:
3536:
3535:
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3524:
3519:
3514:
3509:
3499:
3494:
3489:
3484:
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3467:
3462:
3461:
3460:
3455:
3450:
3445:
3435:
3430:
3425:
3420:
3415:
3409:
3407:
3403:
3402:
3399:
3398:
3396:
3395:
3390:
3385:
3380:
3375:
3370:
3365:
3360:
3355:
3349:
3347:
3340:
3336:
3335:
3330:
3328:
3327:
3320:
3313:
3305:
3298:
3297:
3270:(2): 114–120.
3254:
3240:
3175:
3125:
3118:
3095:
3084:(7): 1049–60.
3068:
3051:
3039:
3003:
2992:(3): 387–412.
2976:
2969:
2943:
2908:
2901:
2875:
2868:
2846:
2811:
2772:
2753:(12): 1484–9.
2737:
2710:(25): 255503.
2694:
2651:Europhys. Lett
2641:
2599:
2596:on 2011-07-13.
2550:
2547:on 2012-12-18.
2506:
2459:
2448:(3): 505–510.
2432:
2405:(7): 1078–80.
2389:
2362:
2355:
2335:
2289:
2268:(9): 394–404.
2251:
2236:
2193:
2150:
2103:
2068:(28): 285204.
2062:Nanotechnology
2052:
2017:
2014:on 2012-03-23.
1974:
1916:
1881:
1836:
1778:
1725:
1679:
1636:
1606:
1603:on 2011-09-27.
1536:
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1450:(29): 3962–7.
1431:
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1276:(3): 267–275.
1256:
1245:(2): 100–107.
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705:Main article:
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3251:. 2012-10-24.
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2033:(6922): 496.
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2018:
2013:
2009:
2005:
2001:
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1993:
1989:
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1978:
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1800:
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1013:0-471-33372-7
1009:
1006:. p. 4.
1005:
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991:Sze, Simon M.
986:
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885:chemisorption
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778:Manufacturing
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590:
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564:tight binding
560:
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520:semiconductor
517:
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472:self-assembly
468:
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461:semiconductor
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150:Nanomechanics
148:
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145:Nanophotonics
143:
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118:
115:
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82:Nanocircuitry
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3458:Robot ethics
3377:
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2859:
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2824:
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2814:
2792:(1): 79–86.
2789:
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2740:
2707:
2703:
2697:
2657:(3): 36006.
2654:
2650:
2644:
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2602:
2591:the original
2570:
2566:
2553:
2542:the original
2529:
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2472:
2462:
2445:
2441:
2435:
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2308:(7): 491–9.
2305:
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2163:
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2012:the original
1991:
1987:
1977:
1936:
1932:
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1894:
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1798:
1795:Nano Letters
1794:
1781:
1748:
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1639:
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1598:the original
1561:
1557:
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1494:
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1383:
1379:
1364:. July 2011.
1341:. Retrieved
1330:. Springer.
1326:
1319:
1300:
1273:
1269:
1259:
1242:
1238:
1232:
1220:. Retrieved
1203:
1191:. Retrieved
1187:the original
1176:
1167:
1142:
1136:
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1109:
1097:. Retrieved
1090:
1065:
1055:
1032:
1022:
995:
985:
968:
964:
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934:
906:
858:
838:Applications
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810:
806:
802:
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781:
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639:
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609:Difficulties
603:
587:
573:
548:
540:
528:
497:
480:
465:
437:
434:
421:
405:
378:in 1989. At
352:Bijan Davari
301:
291:As noted by
290:
268:in the air.
225:
221:
220:
96:
3522:Moore's law
3453:Neuroethics
3448:Cyberethics
3393:Twistronics
3383:Spintronics
3346:Electronics
3195:(1): 1464.
1994:(6): 3144.
1343:24 November
739:Simulations
673:invented a
544:Transistors
524:transistors
388:Chenming Hu
380:UC Berkeley
350:. In 1987,
324:100 nm
107:Moore's law
3589:Categories
3413:Automation
3353:E-textiles
2622:(5): 726.
2573:(5): 721.
2532:(3): 230.
2275:2003.07115
971:(9): 547.
899:References
877:metal film
865:cantilever
729:nanoscales
532:nanomotors
368:20 nm
348:10 nm
344:thin films
338:that used
336:transistor
320:gate oxide
277:Background
140:Nanoionics
102:Nanosensor
3443:Bioethics
3368:Memristor
3217:2041-1723
3170:136894526
2938:135754653
2841:253682814
2689:118792981
2664:1411.0375
1969:262262236
1393:1212.1347
1305:ITRS Home
1292:1660-6795
1159:114072236
1037:CRC Press
489:Materials
467:Bottom-up
457:nanowires
328:nanolayer
312:Bell Labs
250:nanometer
242:actuators
230:nanoscale
87:Nanowires
3292:18654230
3235:35304454
3034:12801705
2806:21104780
2767:17193010
2732:12484896
2501:52271550
2493:30212184
2473:ACS Nano
2427:40641941
2330:41310254
2322:12118988
2188:10710305
2145:10884232
2090:21828728
2047:12556880
1961:15064412
1823:21294522
1773:20385091
1712:18420920
1594:10224625
1586:18192169
1531:17754057
1523:17255506
1472:23798476
1426:20377068
1418:24710311
1386:: 3638.
1308:Archived
993:(2002).
893:attogram
717:ribosome
625:band gap
620:helicity
589:Metallic
579:graphene
536:switches
512:graphene
440:top-down
362:enabled
217:package.
3272:Bibcode
3226:8933423
3197:Bibcode
3150:Bibcode
2712:Bibcode
2669:Bibcode
2624:Bibcode
2575:Bibcode
2407:Bibcode
2231:4332194
2211:Bibcode
2168:Bibcode
2160:Science
2125:Bibcode
2117:Science
2098:2228946
2070:Bibcode
1996:Bibcode
1941:Bibcode
1933:Science
1899:Bibcode
1864:Bibcode
1803:Bibcode
1753:Bibcode
1720:9585810
1692:Science
1674:4403144
1654:Bibcode
1566:Bibcode
1503:Bibcode
1495:Science
1480:5089294
1452:Bibcode
1398:Bibcode
504:diamond
474:and/or
448:optical
364:scaling
354:led an
318:with a
272:History
159:Portals
3438:Ethics
3406:Topics
3339:Fields
3290:
3233:
3223:
3215:
3168:
3116:
3032:
2967:
2936:
2899:
2866:
2839:
2804:
2765:
2730:
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2499:
2491:
2425:
2353:
2328:
2320:
2229:
2203:Nature
2186:
2143:
2096:
2088:
2045:
2027:Nature
1967:
1959:
1831:996449
1829:
1821:
1771:
1718:
1710:
1672:
1646:Nature
1592:
1584:
1529:
1521:
1478:
1470:
1424:
1416:
1334:
1290:
1222:4 July
1218:. 2014
1193:4 July
1157:
1124:
1099:9 July
1043:
1010:
942:
816:Future
616:oxygen
583:chiral
568:zigzag
500:carbon
394:
372:FinFET
366:below
330:-base
316:MOSFET
304:Atalla
214:SiTime
3166:S2CID
3138:(PDF)
2934:S2CID
2837:S2CID
2786:Small
2747:Small
2685:S2CID
2659:arXiv
2612:(PDF)
2594:(PDF)
2563:(PDF)
2545:(PDF)
2522:(PDF)
2497:S2CID
2423:S2CID
2326:S2CID
2270:arXiv
2227:S2CID
2094:S2CID
1965:S2CID
1929:(PDF)
1854:arXiv
1827:S2CID
1791:(PDF)
1769:S2CID
1741:(PDF)
1716:S2CID
1670:S2CID
1601:(PDF)
1590:S2CID
1554:(PDF)
1527:S2CID
1476:S2CID
1422:S2CID
1388:arXiv
1216:Intel
1212:(PDF)
1155:S2CID
1004:Wiley
1000:(PDF)
875:thin
867:with
719:is a
342:(Au)
308:Kahng
3573:List
3288:PMID
3231:PMID
3213:ISSN
3114:ISBN
3030:PMID
2965:ISBN
2897:ISBN
2864:ISBN
2802:PMID
2763:PMID
2728:PMID
2489:PMID
2351:ISBN
2318:PMID
2184:PMID
2141:PMID
2086:PMID
2043:PMID
1957:PMID
1819:PMID
1708:PMID
1582:PMID
1519:PMID
1468:PMID
1414:PMID
1345:2012
1332:ISBN
1288:ISSN
1224:2019
1195:2019
1122:ISBN
1101:2019
1041:ISBN
1008:ISBN
940:ISBN
747:and
687:CMOS
510:and
438:The
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