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The toxicology of AlGaN has not been fully investigated. The AlGaN dust is an irritant to skin, eyes and lungs. The environment, health and safety aspects of aluminium gallium nitride sources (such as
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Shenai-Khatkhate, D. V.; Goyette, R.; DiCarlo, R. L. Jr.; Dripps, G. (2004). "Environment, Health and Safety Issues for
Sources Used in MOVPE Growth of Compound Semiconductors".
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region, where wavelengths down to 250 nm (far UV) were achieved, and some reports down to 222 nm. It is also used in blue
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Noguchi
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163:"222 nm single-peaked deep-UV LED with thin AlGaN quantum well layers"
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Gallium nitride quantum dots and deep UV light emission.
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or (111) Si, almost always with additional GaN layers.
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N can be tailored from 4.3eV (xAl=0) to 6.2eV (xAl=1).
133:sources have been reported recently in a review.
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105:AlGaN layers are commonly grown on
90:AlGaN is often used together with
85:High-electron-mobility transistors
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79:It is also used in detectors of
280:Light-emitting diode materials
222:10.1016/j.jcrysgro.2004.09.007
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64:AlGaN is used to manufacture
83:radiation, and in AlGaN/GaN
117:Safety and toxicity aspects
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202:Journal of Crystal Growth
28:Aluminium gallium nitride
18:Aluminum gallium nitride
167:Physica Status Solidi C
187:10.1002/pssc.200880923
36:semiconductor material
68:operating in blue to
66:light-emitting diodes
38:. It is any alloy of
255:III-V semiconductors
74:semiconductor lasers
260:Aluminium compounds
214:2004JCrGr.272..816S
179:2009PSSCR...6S.459N
265:Gallium compounds
173:(S2): S459–S461.
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81:ultraviolet
70:ultraviolet
249:Categories
241:GaN in AlN
137:References
98:, forming
270:Nitrides
111:sapphire
210:Bibcode
175:Bibcode
127:ammonia
51:bandgap
34:) is a
131:MOVPE
109:, on
53:of Al
32:AlGaN
125:and
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