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heterojunctions and high k dielectrics for high voltage transistors. He investigated the key reliability problem relating to the conduction channel breakdown due to high electric fields and related the breakdown mechanism to substrate dislocations. Christou proposed a solution to the reliability problem through the control of traps for electrons and through dislocation density reduction. He applied deep-level transient spectroscopy and investigated the formation of trap centers, as well as the application of x-ray topography to determine the morphology of dislocation clusters.
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conducted research on tunable photonic bandgap devices based on multiple layer perovskite heterostructures that are grown by pulsed laser deposition (PLD) on (001) MgO/GaAs substrates. Christou showed that such superlattices are feasible especially for nonlinear photonic applications. His work resulted in optical modulation at primary and first harmonic frequencies, and provided direct evidence of the non-linear electro-optic effect in such materials
216:
delta doping to ultra- wide bandgap semiconductors and developed the p-Diamond HEMT. He pioneered the development of optical interconnects based on GaAs/Si and InGaAs/Si using molecular beam epitaxy and developed the modeling tools for the optical interconnect design. Christou demonstrated that III-V semiconductors can be grown directly on silicon through interface control, thereby limiting the density of threading dislocations.
31:
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Christou studied metal-semiconductor inter-diffusion and electro-migration and developed the
Failure Physics approach to the design and manufacture compound semiconductor devices and circuits. His research identified failure modes which were validated by the application of advanced characterization
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Christou is known for his research on the transistor back-gating phenomenon, hot electron injection, light-induced sensitivity of HEMTs and 2D conducting channel structures in wide bandgap electronics. Christou, using delta doping techniques he developed for GaAs/AlGaAs HEMTs, extended the use of
135:
Christou has conducted research in basic device physics, solid state electronics, semiconductor materials, radiation effects in microelectronics, radiation hard design methodologies, basic processes of materials degradation, along with degradation of metal microstructure and high pressure induced
254:
Christou's contributions to the field of reliable nitride semiconductors and wide bandgap semiconductors led to enhanced and reliable power electronics performance. His contributions also included vertical high electron mobility transistors based on nitride semiconductors utilizing the AlGaN/GaN
219:
Christou designed and demonstrated the selectively oxidized
Vertical Cavity Surface Emitting Laser (VCSEL) for operation at a wavelength of 1.546 ΞΌm and determined performance limitations due to the effects of Bragg mirror interface grading and layer thickness variations. He also developed
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Christou began his career by investigating shock induced transformations in binary iron alloys and steels and was the first to report on the retention of shock induced phases in Fe-Mn based alloys. His later research is focused on compound semiconductor materials, nitride semiconductors and the
232:
In the 1990s, Christou authored papers and one book on GaAs MMIC Reliability, which introduced new failure mechanism models for electromigration and highlighted a practical model for electromigration and its relationship to microstructure. He also presented procedures for avoiding solid-state
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Christou directed the NSF University-Industry
Cooperative Research Center in Optoelectronic Devices Interconnects and Packaging (COEDIP) from 2002 until 2005. In 1989, Christou established the Microelectronics Research Group (MRG) at the University of Crete and the Foundation for Research and
245:
Christou pioneered UV laser processing of GaAs MBE buffer layers through a technique known as LAMBE (Laser
Assisted Molecular Beam Epitaxy). This new laser assisted MBE growth technology enabled low temperature growth to be realized for GaAs buffer layers as well as GaAs epitaxial layers. He
236:
Later in his career, Christou's research resulted in the development of a model for OLED based flexible display degradation based on the ingress of moisture through the protective barrier films. Christou's research on flexible displays starting in 2010 resulted in the solution of the fatigue
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136:
transformations in steels and iron alloys. His technical contributions include the development of material's surface and interface science and methodologies for achieving reliable high frequency devices, optoelectronic devices and circuits.
237:
degradation problem and the elimination of line-out defects which plagued the flexible display industry. He was the first to publish S-N fatigue curves for graphene and Indium Tin Oxide interconnects.
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process science for such materials, radiation effects in materials and devices, manufacturing science of microwave and millimeter wave electronics, and reliability science of high frequency devices.
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is an
American engineer and scientist, academic professor and researcher. He is a Professor of Materials Science, Professor of Mechanical Engineering and Professor of Reliability Engineering at the
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before joining the
University of Maryland in 1990 as a Professor of Mechanical Engineering. He became a Professor of Materials Engineering in 1993 as well as Professor of Reliability Engineering.
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At the
University of Maryland, Christou chaired the Department of Materials and Nuclear Engineering (1993-2003) and the Materials Science and Engineering Department in 2003.
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A. Georgakilas, P. Panayotatos, J. Stoemenos, J.L. Mourrain and A. Christou, "Achievements and
Limitations in Optimized GaAs Films Grown on Si by Molecular Beam Epitaxy",
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1978β1983 β Navy
Outstanding Service Awards for contributions to solid state electronics, phased array radar and for contributions to reliable microelectronics materials
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as a
Researcher from 1971 until 1976, as a Section Head until 1985 and as a Branch Head of Surface Physics until 1989. He then taught briefly at
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748:"Tunable Photonic Bandgap Devices Based on Pb-La-Zr-Ti-O/Sr-Ti-O Two Dimensional Multi-layers on GaAs Substrates"
783:"Effect of doping on electron traps in metalorganic molecular-beam epitaxial GaxIn1βxP/GaAs heterostructures"
634:"Vertical Cavity Surface Emitting Laser with AlGaInAs/InP Bragg mirrors fabricated for operation at 1.55 ΞΌm"
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2007 β Burgess Memorial Award for Seminal Contributions to Electronic Materials, Packaging and Devices, ASM
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2004 β iNEER Lifetime Achievement Award for Achievement on International Engineering Education and Research
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651:"Effects of Bragg Mirror Interface Grading and Layer Thickness Variations on VCSEL Performance at 1.55 ΞΌm"
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113:
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734:"High resolution x-ray photoemission study of plasma oxidation of indiumβtinβoxide thin film surfaces"
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669:"Failure Modes in GaAs Power FETs: Ohmic Contact Electromigration and Formation of Refractory Oxides"
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2000 β IEEE National Lecturer in Optoelectronic Devices and Device and Materials Reliability Physics
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iNEER Lifetime Achievement Award for Achievement on International Engineering Education and Research
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S. Yang, J.Wu, A. Christou, "Initial Stages of Silver Electrochemical Migration Degradation,"
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2012 β Micro & Nano Scientific Society Award of the MNE Annual Conference, Heraklio Crete.
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N. Papanicolaou, A. Christou and M. Gipe, "Pt and PtSi Schottky Contacts on n-type B-SiC",
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1987 β Centennial Medal for Contributions in Compound Semiconductors, University of Bologna
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1981 β UNESCO Award for Scientific Excellence and Contributions for Scientific Assistance
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620:"Ohmic contacts for group III-V n-type semiconductors using epitaxial germanium films"
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A. Christou, "Solid Phase Formation in AuGeNi and AuGeIn-GaAs Ohmic Contact Systems",
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2001β2012 β IEEE Electron Devices Society Recognition and Contributions Service Award
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1999 β Invention of the Year Award in the Physical Sciences, University of Maryland
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computational simulations to identify the key sensitivities to VCSEL performance.
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techniques such as Auger electron spectroscopy, and the high resolution SEM.
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University of Pennsylvania School of Engineering and Applied Science alumni
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Reliability of Gallium Arsenide Monolithic Microwave Integrated Circuits
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549:"Optoelectronic Devices, Interconnects, and Packaging (COEDIP Center)"
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1967 and received his Doctoral degree in Material Science from the
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Paloura, E. C.; Ginoudi, A.; Kiriakidis, G.; Christou, A. (1991).
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S. Yang, A.Christou, "Failure Model for Silver Electromigration"
518:"MSE Professor Aristos Christou Elevated to IEEE 'Life Fellow'"
577:"1997 IEEE International Symposium on Compound Semiconductors"
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Christou received his bachelor's degree in Physics from
765:"Degradation Mechanisms of GaN Based Microwave Devices"
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Integrating Reliability into Microcircuit Manufacturing
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1991 β Navy Patent Award for Electron Device Inventions
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1999β2002 β IEEE National Lecturer in Electron Devices
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IEEE Transactions of Devices Materials and Reliability
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33rd IEEE International Reliability Physics Symposium
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33rd IEEE International Reliability Physics Symposium
667:Christou, A.; Cohen, E.; MacPherson, A. C. (1981).
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401:, Vol. 71, No. 6, pp. 2679β2701 (March 1992).
332:Electromigration and Electronic Device Degradation
141:Institute of Electrical and Electronics Engineers
59:Navy Patent Awards for Electron Device Inventions
673:19th International Reliability Physics Symposium
704:"Failure mechanism models for electromigration"
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918:University of Maryland, College Park faculty
371:Photonic Materials, Devices and Reliability
358:Reliability of High Temperature Electronics
821:"IEEE FELLOW CITATION TO ARISTOS CHRISTOU"
474:"IEEE Fellow citation to Aristos Christou"
224:Physics of failure in electronic materials
49:Professor, Academic and Research Scientist
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264:1974 β NRL Alan Berman Publication Award
65:Centennial Medal, University of Bolognia
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413:IEEE Trans Materials Device Reliability
879:"Christou Receives IEEE Service Award"
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57:UNESCO Award for Scientific Excellence
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149:Reliability and Quality International
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460:"Aristos Christou β Google Scholar"
273:1985β1986 β Fulbright Scholar Award
923:Columbia College (New York) alumni
408:65 (9), pp. 3526β3530 (1989).
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563:"Microelectronics Research Group"
394:22, 141, pp. 149β157 (1979).
145:Materials Science and Engineering
708:IEEE Transactions on Reliability
702:Young, D.; Christou, A. (1994).
250:Reliable nitride semiconductors
241:Processing technology research
151:and previous co-editor of the
23:Aristos (Aristotelis) Christou
1:
893:"Christou Receives ASM Award"
865:"Invention of the Year Award"
139:Christou is a life fellow of
420:Microelectronics Reliability
143:. He has been the Editor of
211:Device physics and modeling
198:Technology-Hellas (FORTH).
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833:10.1109/RELPHY.1995.513706
486:10.1109/RELPHY.1995.513706
406:Journal of Applied Physics
399:Journal of Applied Physics
233:electromigration failure.
169:University of Pennsylvania
99:University of Pennsylvania
181:Naval Research Laboratory
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681:10.1109/IRPS.1981.362993
585:10.1109/ISCS.1998.711527
422:vol.46 (2006) 1915β1921.
84:Ph.D., Materials Science
827:. 1995. pp. 401β.
787:Applied Physics Letters
480:. 1995. pp. 401β.
392:Solid State Electronics
600:Cite journal requires
579:. September 1997: iβ.
130:University of Maryland
114:University of Maryland
532:"Aristos Christou CV"
675:. pp. 182β187.
933:Fellows of the IEEE
799:1991ApPhL..59.3127P
282:1993 β Fellow, IEEE
189:University of Crete
179:Christou worked at
165:Columbia University
95:Columbia University
74:Academic background
185:Rutgers University
793:(24): 3127β3129.
720:10.1109/24.294986
415:, Vol2, Feb 2007.
385:Selected articles
259:Awards and honors
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63:ASM Burgess Award
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