Knowledge (XXG)

Charge carrier density

Source đź“ť

1181: 1020: 891: 1029: 688:
In order to simplify the calculation, instead of treating the electrons as fermions, according to the Fermi–Dirac distribution, we instead treat them as a classical non-interacting gas, which is given by the
527: 902: 757: 1698: 190: 1803:, the exact definition of how many "valence electrons" an element should have in elemental form is somewhat arbitrary, but the following table lists the free electron densities given in 1596:
These carrier concentrations will change if these materials are doped. For example, doping pure silicon with a small amount of phosphorus will increase the carrier density of electrons,
750: 1353: 53:, in principle it can depend on position. However, usually carrier concentration is given as a single number, and represents the average carrier density over the whole material. 2355:
Pietro P. Altermatt, Andreas Schenk, Frank Geelhaar, Gernot Heiser (2003). "Reassessment of the intrinsic carrier density in crystalline silicon in view of band-gap narrowing".
1449: 368:
is the number of holes per unit volume in the valence band. To calculate this number for electrons, we start with the idea that the total density of conduction-band electrons,
293: 221: 447: 87:
If the total number of charge carriers is known, the carrier density can be found by simply dividing by the volume. To show this mathematically, charge carrier density is a
684: 1727: 1254: 1852: 1766: 2390: 2341: 1793: 1394: 1289: 1210: 420: 393: 366: 339: 251: 628: 595: 562: 84:
over the energy range of charge carriers in the material (e.g. integrating over the conduction band for electrons, integrating over the valence band for holes).
1825: 133: 113: 1357:
A similar expression can be derived for holes. The carrier concentration can be calculated by treating electrons moving back and forth across the
454: 752:, which is true for semiconductors near room temperature. This approximation is invalid at very low temperatures or an extremely small band-gap. 1641: 2421: 2325: 1213: 690: 138: 2463: 88: 2501: 1176:{\displaystyle n_{0}=2\left({\frac {m^{*}k_{\text{B}}T}{2\pi \hbar ^{2}}}\right)^{3/2}e^{-{\frac {E_{c}-E_{f}}{k_{\text{B}}T}}}} 395:, is just adding up the conduction electron density across the different energies in the band, from the bottom of the band 1366: 1296: 598: 2279:
are often on the same orders of magnitude, but this simple model cannot predict carrier density to very high accuracy.
1401: 19:
This article is about the number of individual electrons or holes per volume. For the electric charge per volume, see
2404:
Rössler, U. (2002). "Gallium arsenide (GaAs), intrinsic carrier concentration, electrical and thermal conductivity".
256: 1015:{\displaystyle g(E)={\frac {1}{2\pi ^{2}}}\left({\frac {2m^{*}}{\hbar ^{2}}}\right)^{\frac {3}{2}}{\sqrt {E-E_{0}}}} 886:{\displaystyle f(E)={\frac {1}{1+e^{\frac {E-E_{f}}{k_{\text{B}}T}}}}\approx e^{-{\frac {E-E_{f}}{k_{\text{B}}T}}}} 633: 1636:. In this case, the carrier density (in this context, also called the free electron density) can be estimated by: 696: 2562: 1609: 1454: 57: 2406:
Group IV Elements, IV-IV and III-V Compounds. Part b – Electronic, Transport, Optical and Other Properties
2310:
Group IV Elements, IV-IV and III-V Compounds. Part b – Electronic, Transport, Optical and Other Properties
307: 2384: 1612:. Doping pure silicon with a small amount of boron will increase the carrier density of holes, so then 2364: 195: 61: 425: 1804: 1362: 1705: 2529: 2521: 2335: 1219: 1830: 1807:, which were calculated using the formula above based on reasonable assumptions about valence, 1744: 2459: 2417: 2321: 2308:
O. Madelung, U. Rössler, M. Schulz (2002). "Germanium (Ge), intrinsic carrier concentration".
1730: 896: 565: 81: 24: 2557: 2513: 2451: 2409: 2372: 2313: 1738: 1503: 1771: 1372: 1267: 1188: 398: 371: 344: 317: 229: 2446:
Gachovska, Tanya K.; Hudgins, Jerry L. (2018). "SiC and GaN Power Semiconductor Devices".
1855: 1800: 1563: 1547: 1531: 1519: 1257: 604: 571: 538: 38: 2368: 2455: 1810: 303: 118: 98: 20: 2537: 630:
which tells us the portion of those states which will actually have electrons in them
2551: 2533: 65: 1453:
The following table lists a few values of the intrinsic carrier concentration for
2288: 2276: 1796: 1633: 1261: 311: 2497: 226:
If the density does not depend on position and is instead equal to a constant
2065: 1989: 1951: 1932: 1471: 341:
is number of electrons per unit volume in the conduction band. For holes,
2413: 2317: 2287:
The density of charge carriers can be determined in many cases using the
2255: 2179: 2122: 1396:
called the intrinsic carrier concentration, which for undoped materials:
92: 77: 46: 2525: 2236: 2141: 2103: 2027: 1970: 1579: 1487: 1358: 532: 50: 2376: 16:
Charge carriers per volume; such as electrons, ions, "holes" or others
2160: 2008: 1894: 1875: 1629: 42: 2517: 1216:
of the electrons in that particular semiconductor, and the quantity
2291:, the voltage of which depends inversely on the carrier density. 1024:
After combination and simplification, these expressions lead to:
2408:. Landolt-Börnstein – Group III Condensed Matter. pp. 1–8. 2312:. Landolt-Börnstein – Group III Condensed Matter. pp. 1–3. 2217: 2084: 2046: 1913: 535:, the density of conduction electrons at any particular energy, 693:. This approximation has negligible effects when the magnitude 2198: 522:{\displaystyle n_{0}=\int _{E_{c}}^{E_{\text{top}}}N(E)\,dE} 2275:
The values for n among metals inferred for example by the
56:
Charge carrier densities involve equations concerning the
23:. For the number of possible states per energy range, see 1693:{\displaystyle n={\frac {N_{\text{A}}Z\rho _{m}}{m_{a}}}} 76:
The carrier density is usually obtained theoretically by
306:, where it is an important quantity for the process of 1833: 1813: 1774: 1747: 1708: 1644: 1404: 1375: 1299: 1270: 1222: 1191: 1032: 905: 760: 699: 636: 607: 597:
or how many conducting states are possible, with the
574: 541: 457: 428: 401: 374: 347: 320: 259: 232: 198: 141: 121: 101: 2502:"On a New Action of the Magnet on Electric Currents" 1620:, and it will be a p-type extrinsic semiconductor. 1846: 1819: 1787: 1760: 1721: 1692: 1443: 1388: 1347: 1283: 1248: 1204: 1175: 1014: 885: 744: 678: 622: 589: 556: 521: 441: 414: 387: 360: 333: 287: 245: 223:is the position-dependent charge carrier density. 215: 184: 127: 107: 2441: 2439: 2437: 2435: 2433: 185:{\displaystyle N=\int _{V}n(\mathbf {r} )\,dV.} 8: 2389:: CS1 maint: multiple names: authors list ( 2340:: CS1 maint: multiple names: authors list ( 1632:, where it can be estimated from the simple 2477: 2475: 1628:The carrier density is also applicable to 745:{\displaystyle |E-E_{f}|\gg k_{\text{B}}T} 1838: 1832: 1812: 1779: 1773: 1752: 1746: 1713: 1707: 1682: 1671: 1658: 1651: 1643: 1435: 1422: 1409: 1403: 1380: 1374: 1369:. The mass action law defines a quantity 1336: 1323: 1304: 1298: 1275: 1269: 1240: 1227: 1221: 1196: 1190: 1159: 1147: 1134: 1127: 1123: 1109: 1105: 1092: 1071: 1061: 1054: 1037: 1031: 1004: 992: 981: 969: 958: 948: 934: 921: 904: 869: 857: 844: 840: 817: 805: 792: 776: 759: 733: 721: 715: 700: 698: 635: 606: 573: 540: 512: 492: 487: 480: 475: 462: 456: 433: 427: 406: 400: 379: 373: 352: 346: 325: 319: 276: 258: 237: 231: 205: 197: 172: 164: 152: 140: 120: 100: 1860: 1459: 1256:is the difference in energy between the 2300: 1089: 966: 2382: 2333: 1608:, the doped silicon will be a n-type 302:The carrier density is important for 7: 1799:. Since metals can display multiple 1768:is the density of the material, and 1348:{\displaystyle E_{g}=2(E_{c}-E_{f})} 115:gives the number of charge carriers 1457:, in order of increasing band gap. 49:, it is measured in m. As with any 2456:10.1016/b978-0-12-811407-0.00005-2 14: 1444:{\displaystyle n_{i}=n_{0}=p_{0}} 206: 165: 2506:American Journal of Mathematics 1870:Carrier density (1/cm) at 300K 1466:Carrier density (1/cm) at 300K 1361:just like the equilibrium of a 288:{\displaystyle N=V\cdot n_{0}.} 216:{\displaystyle n(\mathbf {r} )} 1365:from chemistry, leading to an 1342: 1316: 1264:, which is half the band gap, 915: 909: 770: 764: 722: 701: 691:Maxwell–Boltzmann distribution 673: 667: 661: 655: 646: 640: 617: 611: 584: 578: 551: 545: 509: 503: 442:{\displaystyle E_{\text{top}}} 210: 202: 169: 161: 1: 1854:calculated from experimental 679:{\displaystyle N(E)=g(E)f(E)} 60:, related phenomena like the 1867:Number of valence electrons 1722:{\displaystyle N_{\text{A}}} 253:this equation simplifies to 1827:, and with mass densities, 1249:{\displaystyle E_{c}-E_{f}} 64:, and chemicals bonds like 2579: 2448:Power Electronics Handbook 2357:Journal of Applied Physics 1367:electronic mass action law 18: 1847:{\displaystyle \rho _{m}} 1761:{\displaystyle \rho _{m}} 2450:. Elsevier. p. 98. 1455:intrinsic semiconductors 599:Fermi–Dirac distribution 37:, denotes the number of 1610:extrinsic semiconductor 422:to the top of the band 314:, the electron density, 58:electrical conductivity 1848: 1821: 1789: 1762: 1723: 1694: 1445: 1390: 1349: 1285: 1250: 1206: 1177: 1016: 895:The three-dimensional 887: 746: 680: 624: 591: 564:is the product of the 558: 531:Because electrons are 523: 443: 416: 389: 362: 335: 289: 247: 217: 186: 129: 109: 31:Charge carrier density 1849: 1822: 1790: 1788:{\displaystyle m_{a}} 1763: 1724: 1695: 1446: 1391: 1389:{\displaystyle n_{i}} 1350: 1286: 1284:{\displaystyle E_{g}} 1251: 1207: 1205:{\displaystyle m^{*}} 1178: 1017: 888: 747: 681: 625: 592: 559: 524: 444: 417: 415:{\displaystyle E_{c}} 390: 388:{\displaystyle n_{0}} 363: 361:{\displaystyle p_{0}} 336: 334:{\displaystyle n_{0}} 290: 248: 246:{\displaystyle n_{0}} 218: 187: 130: 110: 35:carrier concentration 2414:10.1007/10832182_196 2318:10.1007/10832182_503 1831: 1811: 1772: 1745: 1706: 1642: 1402: 1373: 1297: 1268: 1220: 1189: 1030: 903: 758: 697: 634: 623:{\displaystyle f(E)} 605: 590:{\displaystyle g(E)} 572: 557:{\displaystyle N(E)} 539: 455: 426: 399: 372: 345: 318: 257: 230: 196: 139: 119: 99: 62:thermal conductivity 2484:Solid State Physics 2369:2003JAP....93.1598A 1805:Ashcroft and Mermin 1363:reversible reaction 499: 2482:Ashcroft, Mermin. 1844: 1817: 1785: 1758: 1719: 1690: 1441: 1386: 1345: 1281: 1246: 1202: 1173: 1012: 883: 742: 676: 620: 587: 554: 519: 471: 439: 412: 385: 358: 331: 285: 243: 213: 182: 125: 105: 2423:978-3-540-42876-3 2377:10.1063/1.1529297 2327:978-3-540-42876-3 2273: 2272: 1820:{\displaystyle Z} 1801:oxidation numbers 1739:valence electrons 1737:is the number of 1731:Avogadro constant 1716: 1688: 1661: 1594: 1593: 1169: 1162: 1099: 1074: 1010: 989: 975: 941: 897:density of states 879: 872: 831: 827: 820: 736: 566:density of states 495: 436: 128:{\displaystyle N} 108:{\displaystyle V} 95:it over a volume 82:density of states 25:density of states 2570: 2542: 2541: 2540:on 27 July 2011. 2536:. Archived from 2494: 2488: 2487: 2479: 2470: 2469: 2443: 2428: 2427: 2401: 2395: 2394: 2388: 2380: 2352: 2346: 2345: 2339: 2331: 2305: 2269: 2267: 2250: 2248: 2231: 2229: 2212: 2210: 2193: 2191: 2174: 2172: 2155: 2153: 2136: 2134: 2117: 2115: 2098: 2096: 2079: 2077: 2060: 2058: 2041: 2039: 2022: 2020: 2003: 2001: 1984: 1982: 1965: 1963: 1946: 1944: 1927: 1925: 1908: 1906: 1889: 1887: 1861: 1853: 1851: 1850: 1845: 1843: 1842: 1826: 1824: 1823: 1818: 1794: 1792: 1791: 1786: 1784: 1783: 1767: 1765: 1764: 1759: 1757: 1756: 1728: 1726: 1725: 1720: 1718: 1717: 1714: 1699: 1697: 1696: 1691: 1689: 1687: 1686: 1677: 1676: 1675: 1663: 1662: 1659: 1652: 1590: 1588: 1574: 1572: 1558: 1556: 1542: 1540: 1526: 1514: 1512: 1504:Gallium Arsenide 1498: 1496: 1482: 1480: 1460: 1450: 1448: 1447: 1442: 1440: 1439: 1427: 1426: 1414: 1413: 1395: 1393: 1392: 1387: 1385: 1384: 1354: 1352: 1351: 1346: 1341: 1340: 1328: 1327: 1309: 1308: 1290: 1288: 1287: 1282: 1280: 1279: 1255: 1253: 1252: 1247: 1245: 1244: 1232: 1231: 1211: 1209: 1208: 1203: 1201: 1200: 1182: 1180: 1179: 1174: 1172: 1171: 1170: 1168: 1164: 1163: 1160: 1153: 1152: 1151: 1139: 1138: 1128: 1118: 1117: 1113: 1104: 1100: 1098: 1097: 1096: 1080: 1076: 1075: 1072: 1066: 1065: 1055: 1042: 1041: 1021: 1019: 1018: 1013: 1011: 1009: 1008: 993: 991: 990: 982: 980: 976: 974: 973: 964: 963: 962: 949: 942: 940: 939: 938: 922: 892: 890: 889: 884: 882: 881: 880: 878: 874: 873: 870: 863: 862: 861: 845: 832: 830: 829: 828: 826: 822: 821: 818: 811: 810: 809: 793: 777: 751: 749: 748: 743: 738: 737: 734: 725: 720: 719: 704: 685: 683: 682: 677: 629: 627: 626: 621: 596: 594: 593: 588: 563: 561: 560: 555: 528: 526: 525: 520: 498: 497: 496: 493: 486: 485: 484: 467: 466: 448: 446: 445: 440: 438: 437: 434: 421: 419: 418: 413: 411: 410: 394: 392: 391: 386: 384: 383: 367: 365: 364: 359: 357: 356: 340: 338: 337: 332: 330: 329: 294: 292: 291: 286: 281: 280: 252: 250: 249: 244: 242: 241: 222: 220: 219: 214: 209: 191: 189: 188: 183: 168: 157: 156: 134: 132: 131: 126: 114: 112: 111: 106: 89:particle density 33:, also known as 2578: 2577: 2573: 2572: 2571: 2569: 2568: 2567: 2563:Charge carriers 2548: 2547: 2546: 2545: 2518:10.2307/2369245 2496: 2495: 2491: 2486:. pp. 4–5. 2481: 2480: 2473: 2466: 2445: 2444: 2431: 2424: 2403: 2402: 2398: 2381: 2354: 2353: 2349: 2332: 2328: 2307: 2306: 2302: 2297: 2285: 2265: 2263: 2246: 2244: 2227: 2225: 2208: 2206: 2189: 2187: 2170: 2168: 2151: 2149: 2132: 2130: 2113: 2111: 2094: 2092: 2075: 2073: 2056: 2054: 2037: 2035: 2018: 2016: 1999: 1997: 1980: 1978: 1961: 1959: 1942: 1940: 1923: 1921: 1904: 1902: 1885: 1883: 1856:crystallography 1834: 1829: 1828: 1809: 1808: 1775: 1770: 1769: 1748: 1743: 1742: 1709: 1704: 1703: 1678: 1667: 1654: 1653: 1640: 1639: 1626: 1586: 1584: 1570: 1568: 1564:Gallium nitride 1554: 1552: 1538: 1536: 1524: 1510: 1508: 1494: 1492: 1478: 1476: 1431: 1418: 1405: 1400: 1399: 1376: 1371: 1370: 1332: 1319: 1300: 1295: 1294: 1271: 1266: 1265: 1258:conduction band 1236: 1223: 1218: 1217: 1192: 1187: 1186: 1155: 1154: 1143: 1130: 1129: 1119: 1088: 1081: 1067: 1057: 1056: 1050: 1049: 1033: 1028: 1027: 1000: 965: 954: 950: 944: 943: 930: 926: 901: 900: 865: 864: 853: 846: 836: 813: 812: 801: 794: 788: 781: 756: 755: 729: 711: 695: 694: 632: 631: 603: 602: 570: 569: 537: 536: 488: 476: 458: 453: 452: 429: 424: 423: 402: 397: 396: 375: 370: 369: 348: 343: 342: 321: 316: 315: 308:chemical doping 300: 272: 255: 254: 233: 228: 227: 194: 193: 148: 137: 136: 135:in that volume 117: 116: 97: 96: 74: 39:charge carriers 28: 17: 12: 11: 5: 2576: 2574: 2566: 2565: 2560: 2550: 2549: 2544: 2543: 2489: 2471: 2464: 2429: 2422: 2396: 2347: 2326: 2299: 2298: 2296: 2293: 2284: 2281: 2271: 2270: 2261: 2258: 2252: 2251: 2242: 2239: 2233: 2232: 2223: 2220: 2214: 2213: 2204: 2201: 2195: 2194: 2185: 2182: 2176: 2175: 2166: 2163: 2157: 2156: 2147: 2144: 2138: 2137: 2128: 2125: 2119: 2118: 2109: 2106: 2100: 2099: 2090: 2087: 2081: 2080: 2071: 2068: 2062: 2061: 2052: 2049: 2043: 2042: 2033: 2030: 2024: 2023: 2014: 2011: 2005: 2004: 1995: 1992: 1986: 1985: 1976: 1973: 1967: 1966: 1957: 1954: 1948: 1947: 1938: 1935: 1929: 1928: 1919: 1916: 1910: 1909: 1900: 1897: 1891: 1890: 1881: 1878: 1872: 1871: 1868: 1865: 1841: 1837: 1816: 1782: 1778: 1755: 1751: 1712: 1685: 1681: 1674: 1670: 1666: 1657: 1650: 1647: 1625: 1622: 1600:. Then, since 1592: 1591: 1582: 1576: 1575: 1566: 1560: 1559: 1550: 1544: 1543: 1534: 1528: 1527: 1522: 1516: 1515: 1506: 1500: 1499: 1490: 1484: 1483: 1474: 1468: 1467: 1464: 1438: 1434: 1430: 1425: 1421: 1417: 1412: 1408: 1383: 1379: 1344: 1339: 1335: 1331: 1326: 1322: 1318: 1315: 1312: 1307: 1303: 1278: 1274: 1243: 1239: 1235: 1230: 1226: 1214:effective mass 1199: 1195: 1167: 1158: 1150: 1146: 1142: 1137: 1133: 1126: 1122: 1116: 1112: 1108: 1103: 1095: 1091: 1087: 1084: 1079: 1070: 1064: 1060: 1053: 1048: 1045: 1040: 1036: 1007: 1003: 999: 996: 988: 985: 979: 972: 968: 961: 957: 953: 947: 937: 933: 929: 925: 920: 917: 914: 911: 908: 877: 868: 860: 856: 852: 849: 843: 839: 835: 825: 816: 808: 804: 800: 797: 791: 787: 784: 780: 775: 772: 769: 766: 763: 741: 732: 728: 724: 718: 714: 710: 707: 703: 675: 672: 669: 666: 663: 660: 657: 654: 651: 648: 645: 642: 639: 619: 616: 613: 610: 586: 583: 580: 577: 553: 550: 547: 544: 518: 515: 511: 508: 505: 502: 491: 483: 479: 474: 470: 465: 461: 432: 409: 405: 382: 378: 355: 351: 328: 324: 304:semiconductors 299: 298:Semiconductors 296: 284: 279: 275: 271: 268: 265: 262: 240: 236: 212: 208: 204: 201: 181: 178: 175: 171: 167: 163: 160: 155: 151: 147: 144: 124: 104: 73: 70: 21:charge density 15: 13: 10: 9: 6: 4: 3: 2: 2575: 2564: 2561: 2559: 2556: 2555: 2553: 2539: 2535: 2531: 2527: 2523: 2519: 2515: 2512:(3): 287–92. 2511: 2507: 2503: 2499: 2493: 2490: 2485: 2478: 2476: 2472: 2467: 2465:9780128114070 2461: 2457: 2453: 2449: 2442: 2440: 2438: 2436: 2434: 2430: 2425: 2419: 2415: 2411: 2407: 2400: 2397: 2392: 2386: 2378: 2374: 2370: 2366: 2362: 2358: 2351: 2348: 2343: 2337: 2329: 2323: 2319: 2315: 2311: 2304: 2301: 2294: 2292: 2290: 2282: 2280: 2278: 2262: 2259: 2257: 2254: 2253: 2243: 2240: 2238: 2235: 2234: 2224: 2221: 2219: 2216: 2215: 2205: 2202: 2200: 2197: 2196: 2186: 2183: 2181: 2178: 2177: 2167: 2164: 2162: 2159: 2158: 2148: 2145: 2143: 2140: 2139: 2129: 2126: 2124: 2121: 2120: 2110: 2107: 2105: 2102: 2101: 2091: 2088: 2086: 2083: 2082: 2072: 2069: 2067: 2064: 2063: 2053: 2050: 2048: 2045: 2044: 2034: 2031: 2029: 2026: 2025: 2015: 2012: 2010: 2007: 2006: 1996: 1993: 1991: 1988: 1987: 1977: 1974: 1972: 1969: 1968: 1958: 1955: 1953: 1950: 1949: 1939: 1936: 1934: 1931: 1930: 1920: 1917: 1915: 1912: 1911: 1901: 1898: 1896: 1893: 1892: 1882: 1879: 1877: 1874: 1873: 1869: 1866: 1863: 1862: 1859: 1857: 1839: 1835: 1814: 1806: 1802: 1798: 1780: 1776: 1753: 1749: 1740: 1736: 1732: 1710: 1700: 1683: 1679: 1672: 1668: 1664: 1655: 1648: 1645: 1637: 1635: 1631: 1623: 1621: 1619: 1615: 1611: 1607: 1603: 1599: 1583: 1581: 1578: 1577: 1567: 1565: 1562: 1561: 1551: 1549: 1546: 1545: 1535: 1533: 1530: 1529: 1523: 1521: 1518: 1517: 1507: 1505: 1502: 1501: 1491: 1489: 1486: 1485: 1475: 1473: 1470: 1469: 1465: 1462: 1461: 1458: 1456: 1451: 1436: 1432: 1428: 1423: 1419: 1415: 1410: 1406: 1397: 1381: 1377: 1368: 1364: 1360: 1355: 1337: 1333: 1329: 1324: 1320: 1313: 1310: 1305: 1301: 1292: 1276: 1272: 1263: 1259: 1241: 1237: 1233: 1228: 1224: 1215: 1197: 1193: 1183: 1165: 1156: 1148: 1144: 1140: 1135: 1131: 1124: 1120: 1114: 1110: 1106: 1101: 1093: 1085: 1082: 1077: 1068: 1062: 1058: 1051: 1046: 1043: 1038: 1034: 1025: 1022: 1005: 1001: 997: 994: 986: 983: 977: 970: 959: 955: 951: 945: 935: 931: 927: 923: 918: 912: 906: 898: 893: 875: 866: 858: 854: 850: 847: 841: 837: 833: 823: 814: 806: 802: 798: 795: 789: 785: 782: 778: 773: 767: 761: 753: 739: 730: 726: 716: 712: 708: 705: 692: 686: 670: 664: 658: 652: 649: 643: 637: 614: 608: 600: 581: 575: 567: 548: 542: 534: 529: 516: 513: 506: 500: 489: 481: 477: 472: 468: 463: 459: 450: 430: 407: 403: 380: 376: 353: 349: 326: 322: 313: 309: 305: 297: 295: 282: 277: 273: 269: 266: 263: 260: 238: 234: 224: 199: 179: 176: 173: 158: 153: 149: 145: 142: 122: 102: 94: 90: 85: 83: 79: 71: 69: 67: 66:covalent bond 63: 59: 54: 52: 48: 44: 40: 36: 32: 26: 22: 2538:the original 2509: 2505: 2492: 2483: 2447: 2405: 2399: 2385:cite journal 2360: 2356: 2350: 2309: 2303: 2286: 2274: 1734: 1701: 1638: 1627: 1617: 1613: 1605: 1601: 1597: 1595: 1452: 1398: 1356: 1293: 1184: 1026: 1023: 894: 754: 687: 530: 451: 301: 225: 86: 75: 55: 34: 30: 29: 2363:(3): 1598. 2289:Hall effect 2283:Measurement 2277:Hall effect 1797:atomic mass 1634:Drude model 1262:Fermi level 312:band theory 93:integrating 78:integrating 72:Calculation 2552:Categories 2498:Edwin Hall 2295:References 2534:107500183 2336:cite book 2066:Manganese 1990:Strontium 1952:Magnesium 1933:Beryllium 1864:Material 1836:ρ 1750:ρ 1669:ρ 1472:Germanium 1463:Material 1330:− 1234:− 1198:∗ 1141:− 1125:− 1090:ℏ 1086:π 1063:∗ 998:− 967:ℏ 960:∗ 932:π 851:− 842:− 834:≈ 799:− 727:≫ 709:− 473:∫ 270:⋅ 150:∫ 2500:(1879). 2256:Antimony 2180:Thallium 2123:Aluminum 1260:and the 533:fermions 310:. Using 47:SI units 2558:Density 2526:2369245 2365:Bibcode 2237:Bismuth 2142:Gallium 2104:Cadmium 2028:Niobium 1971:Calcium 1795:is the 1729:is the 1580:Diamond 1488:Silicon 1359:bandgap 1212:is the 51:density 2532:  2524:  2462:  2420:  2324:  2161:Indium 2009:Barium 1895:Silver 1876:Copper 1858:data. 1702:Where 1630:metals 1624:Metals 1548:4H-SiC 1532:6H-SiC 1520:3C-SiC 192:where 43:volume 2530:S2CID 2522:JSTOR 1616:> 1604:> 1185:Here 91:, so 45:. In 2460:ISBN 2418:ISBN 2391:link 2342:link 2322:ISBN 2264:1.65 2245:1.41 2226:1.32 2218:Lead 2207:1.48 2188:1.05 2169:1.15 2150:1.54 2131:1.81 2112:9.27 2093:1.32 2085:Zinc 2074:1.65 2055:1.70 2047:Iron 2036:5.56 2017:3.15 1998:3.55 1979:4.61 1960:8.61 1941:2.47 1922:5.90 1914:Gold 1903:5.86 1884:8.47 1493:9.65 1477:2.33 899:is: 80:the 41:per 2514:doi 2452:doi 2410:doi 2373:doi 2314:doi 2199:Tin 1585:1.6 1569:1.9 1553:8.2 1537:2.3 1509:2.1 494:top 435:top 2554:: 2528:. 2520:. 2508:. 2504:. 2474:^ 2458:. 2432:^ 2416:. 2387:}} 2383:{{ 2371:. 2361:93 2359:. 2338:}} 2334:{{ 2320:. 2268:10 2260:5 2249:10 2241:5 2230:10 2222:4 2211:10 2203:4 2192:10 2184:3 2173:10 2165:3 2154:10 2146:3 2135:10 2127:3 2116:10 2108:2 2097:10 2089:2 2078:10 2070:2 2059:10 2051:2 2040:10 2032:1 2021:10 2013:2 2002:10 1994:2 1983:10 1975:2 1964:10 1956:2 1945:10 1937:2 1926:10 1918:1 1907:10 1899:1 1888:10 1880:1 1741:, 1733:, 1589:10 1573:10 1557:10 1541:10 1525:10 1513:10 1497:10 1481:10 1291:: 601:, 568:, 449:. 68:. 2516:: 2510:2 2468:. 2454:: 2426:. 2412:: 2393:) 2379:. 2375:: 2367:: 2344:) 2330:. 2316:: 2266:Ă— 2247:Ă— 2228:Ă— 2209:Ă— 2190:Ă— 2171:Ă— 2152:Ă— 2133:Ă— 2114:Ă— 2095:Ă— 2076:Ă— 2057:Ă— 2038:Ă— 2019:Ă— 2000:Ă— 1981:Ă— 1962:Ă— 1943:Ă— 1924:Ă— 1905:Ă— 1886:Ă— 1840:m 1815:Z 1781:a 1777:m 1754:m 1735:Z 1715:A 1711:N 1684:a 1680:m 1673:m 1665:Z 1660:A 1656:N 1649:= 1646:n 1618:n 1614:p 1606:p 1602:n 1598:n 1587:Ă— 1571:Ă— 1555:Ă— 1539:Ă— 1511:Ă— 1495:Ă— 1479:Ă— 1437:0 1433:p 1429:= 1424:0 1420:n 1416:= 1411:i 1407:n 1382:i 1378:n 1343:) 1338:f 1334:E 1325:c 1321:E 1317:( 1314:2 1311:= 1306:g 1302:E 1277:g 1273:E 1242:f 1238:E 1229:c 1225:E 1194:m 1166:T 1161:B 1157:k 1149:f 1145:E 1136:c 1132:E 1121:e 1115:2 1111:/ 1107:3 1102:) 1094:2 1083:2 1078:T 1073:B 1069:k 1059:m 1052:( 1047:2 1044:= 1039:0 1035:n 1006:0 1002:E 995:E 987:2 984:3 978:) 971:2 956:m 952:2 946:( 936:2 928:2 924:1 919:= 916:) 913:E 910:( 907:g 876:T 871:B 867:k 859:f 855:E 848:E 838:e 824:T 819:B 815:k 807:f 803:E 796:E 790:e 786:+ 783:1 779:1 774:= 771:) 768:E 765:( 762:f 740:T 735:B 731:k 723:| 717:f 713:E 706:E 702:| 674:) 671:E 668:( 665:f 662:) 659:E 656:( 653:g 650:= 647:) 644:E 641:( 638:N 618:) 615:E 612:( 609:f 585:) 582:E 579:( 576:g 552:) 549:E 546:( 543:N 517:E 514:d 510:) 507:E 504:( 501:N 490:E 482:c 478:E 469:= 464:0 460:n 431:E 408:c 404:E 381:0 377:n 354:0 350:p 327:0 323:n 283:. 278:0 274:n 267:V 264:= 261:N 239:0 235:n 211:) 207:r 203:( 200:n 180:. 177:V 174:d 170:) 166:r 162:( 159:n 154:V 146:= 143:N 123:N 103:V 27:.

Index

charge density
density of states
charge carriers
volume
SI units
density
electrical conductivity
thermal conductivity
covalent bond
integrating
density of states
particle density
integrating
semiconductors
chemical doping
band theory
fermions
density of states
Fermi–Dirac distribution
Maxwell–Boltzmann distribution
density of states
effective mass
conduction band
Fermi level
bandgap
reversible reaction
electronic mass action law
intrinsic semiconductors
Germanium
Silicon

Text is available under the Creative Commons Attribution-ShareAlike License. Additional terms may apply.

↑