293:
58:, although the two terms are commonly used interchangeably. The requirement that each material be a semiconductor with unequal band gaps is somewhat loose, especially on small length scales, where electronic properties depend on spatial properties. A more modern definition of heterojunction is the interface between any two solid-state materials, including crystalline and amorphous structures of metallic, insulating,
2685:
2391:
285:
2956:. In CdSe the quantum size effect is much more pronounced in the conduction band due to the smaller effective mass than in the valence band, and this is the case with most semiconductors. Consequently, engineering the conduction band offset is typically much easier with nanoscale heterojunctions. For staggered (type II) offset nanoscale heterojunctions,
1125:
936:
1306:
2406:
2112:
2843:
2890:. This enables band offset engineering in nanoscale heterostructures. It is possible to use the same materials but change the type of junction, say from straddling (type I) to staggered (type II), by changing the size or thickness of the crystals involved. The most common nanoscale heterostructure system is
346:
was proposed which guesses that since the valence band is related to anionic states, materials with the same anions should have very small valence band offsets. This however did not explain the data but is related to the trend that two materials with different anions tend to have larger
1801:
942:
1439:
3544:
Ivanov, Sergei A.; Piryatinski, Andrei; Nanda, Jagjit; Tretiak, Sergei; Zavadil, Kevin R.; Wallace, William O.; Werder, Don; Klimov, Victor I. (2007). "Type-II Core/Shell CdS/ZnSe
Nanocrystals: Synthesis, Electronic Structures, and Spectroscopic Properties".
2089:
1945:
760:
2680:{\displaystyle {\frac {df}{dE}}={\frac {1}{m_{w}^{*}}}{\frac {dk}{dE}}\cot({\frac {kl_{w}}{2}})-{\frac {k}{m_{w}^{*}}}\csc ^{2}({\frac {kl_{w}}{2}})\times {\frac {l_{w}}{2}}{\frac {dk}{dE}}+{\frac {1}{m_{b}^{*}}}{\frac {d\kappa }{dE}}\quad \quad (9-2)}
2386:{\displaystyle {\frac {df}{dE}}={\frac {1}{m_{w}^{*}}}{\frac {dk}{dE}}\tan({\frac {kl_{w}}{2}})+{\frac {k}{m_{w}^{*}}}\sec ^{2}({\frac {kl_{w}}{2}})\times {\frac {l_{w}}{2}}{\frac {dk}{dE}}-{\frac {1}{m_{b}^{*}}}{\frac {d\kappa }{dE}}\quad \quad (9-1)}
1131:
275:
production and photodegradation of pollutants in water than single metl oxides. The performance of the heterojuntion can be further improved by incorporation of oxygen vacacies, crystatal facet engineeringor incorporation of carbonaceous materials.
2695:
1595:
315:
at the interface. Semiconductor interfaces can be organized into three types of heterojunctions: straddling gap (type I), staggered gap (type II) or broken gap (type III) as seen in the figure. Away from the junction, the
78:(CVD) technologies in order to precisely control the deposition thickness and create a cleanly lattice-matched abrupt interface. A recent alternative under research is the mechanical stacking of layered materials into
705:
1644:
1120:{\displaystyle \quad \quad -{\frac {\hbar ^{2}}{2m_{w}^{*}}}{\frac {\mathrm {d} ^{2}\psi (z)}{\mathrm {d} z^{2}}}=E\psi (z)\quad \quad {\text{ for }}-{\frac {l_{w}}{2}}<z<+{\frac {l_{w}}{2}}\quad \quad (2)}
2964:
may be on one side of the junction whereas the lowest energy for electrons is on the opposite side. It has been suggested that anisotropic staggered gap (type II) nanoscale heterojunctions may be used for
3411:
Debbar, N.; Biswas, Dipankar; Bhattacharya, Pallab (1989). "Conduction-band offsets in pseudomorphic InxGa1-xAs/Al0.2Ga0.8As quantum wells (0.07â€xâ€0.18) measured by deep-level transient spectroscopy".
535:
1340:
162:
of heterostructure fabrication to catch up with
Kroemer's ideas but now it is the industry standard. It was later discovered that the band gap could be controlled by taking advantage of the
931:{\displaystyle -{\frac {\hbar ^{2}}{2m_{b}^{*}}}{\frac {\mathrm {d} ^{2}\psi (z)}{\mathrm {d} z^{2}}}+V\psi (z)=E\psi (z)\quad \quad {\text{ for }}z<-{\frac {l_{w}}{2}}\quad \quad (1)}
1961:
1817:
616:
in a quantum well, known as BenDanielâDuke boundary condition. According to them, the envelope function in a fabricated quantum well must satisfy a boundary condition which states that
473:
1301:{\displaystyle -{\frac {\hbar ^{2}}{2m_{b}^{*}}}{\frac {\mathrm {d} ^{2}\psi (z)}{\mathrm {d} z^{2}}}+V\psi (z)=E\psi (z)\quad {\text{ for }}z>+{\frac {l_{w}}{2}}\quad \quad (3)}
1482:
1635:
2838:{\displaystyle {\frac {dk}{dE}}={\frac {\sqrt {2m_{w}^{*}}}{2{\sqrt {E}}\hbar }}\quad \quad \quad {\frac {d\kappa }{dE}}=-{\frac {\sqrt {2m_{b}^{*}}}{2{\sqrt {V-E}}\hbar }}}
643:
1331:
750:
606:
2878:. This staggered gap (type II) offset junction was synthesized by Hunter McDaniel and Dr. Moonsub Shim at the University of Illinois in Urbana-Champaign in 2007.
1492:
2930:
crystal phase and are closely lattice matched, core shell growth is preferred. In other systems or under different growth conditions it may be possible to grow
3127:
Okuda, Koji; Okamoto, Hiroaki; Hamakawa, Yoshihiro (1983). "Amorphous Si/Polycrystalline Si
Stacked Solar Cell Having More Than 12% Conversion Efficiency".
581:
across the heterojunction becomes substantial. The quantum well defined in the heterojunction can be treated as a finite well potential with width of
3585:
Robel, IstvĂĄn; Kuno, Masaru; Kamat, Prashant V. (2007). "Size-Dependent
Electron Injection from Excited CdSe Quantum Dots into TiO2Nanoparticles".
2863:
648:
85:
Despite their expense, heterojunctions have found use in a variety of specialized applications where their unique characteristics are critical:
1796:{\displaystyle -{\frac {kA}{m_{w}^{*}}}\sin({\frac {kl_{w}}{2}})=-{\frac {\kappa B}{m_{b}^{*}}}\exp(-{\frac {\kappa l_{w}}{2}})\quad \quad (6)}
3640:
3106:
50:. It is often advantageous to engineer the electronic energy bands in many solid-state device applications, including semiconductor lasers,
578:
100:
thin film (band gap 1.7 eV) in some solar cell architectures. The heterojunction is used to separate charge carriers in a similar way to a
116:. HIT solar cells now hold the record for the most efficient single-junction silicon solar cell, with a conversion efficiency of 26.7%.
3170:
Yamamoto, Kenji; Yoshikawa, Kunta; Uzu, Hisashi; Adachi, Daisuke (2018). "High-efficiency heterojunction crystalline Si solar cells".
3746:
3673:
3532:
3392:
3369:
3314:
227:
147:
3676:. A somewhat dated reference respect to applications, but always a good introduction to basic principles of heterojunction devices.
2992:
363:
2875:
222:
and low reverse gain result. This translates into very good high frequency operation (values in tens to hundreds of GHz) and low
2957:
2927:
79:
1434:{\displaystyle k={\frac {\sqrt {2m_{w}E}}{\hbar }}\quad \quad \kappa ={\frac {\sqrt {2m_{b}(V-E)}}{\hbar }}\quad \quad (4)}
478:
335:, which predicts the band alignment based on the properties of vacuum-semiconductor interfaces (in particular the vacuum
3266:"Interface engineered metal oxide heterojunction nanostructures in photocatalytic CO2 reduction: Progress and prospects"
2938:
215:
2084:{\displaystyle f(E)=-{\frac {k}{m_{w}^{*}}}\cot({\frac {kl_{w}}{2}})+{\frac {\kappa }{m_{b}^{*}}}=0\quad \quad (8)}
1940:{\displaystyle f(E)=-{\frac {k}{m_{w}^{*}}}\tan({\frac {kl_{w}}{2}})-{\frac {\kappa }{m_{b}^{*}}}=0\quad \quad (7)}
292:
105:
75:
430:
397:
is a heuristic for the specific case of junctions between the semiconductor GaAs and the alloy semiconductor Al
379:
3711:
Kurhekar, Anil
Sudhakar (2018). "Thermal annealing improves electrical properties of hetero-junction diode".
2903:
722:
253:
241:
202:
198:
3454:
Conley, J.; Duke, C.; Mahan, G.; Tiemann, J. (1966). "Electron
Tunneling in MetalâSemiconductor Barriers".
178:
which occurs at the interface, another major advantage to their use in semiconductor lasers. Semiconductor
613:
205:
71:
1450:
2945:
in these structures is the conduction band offset. By decreasing the size of CdSe nanocrystals grown on
1606:
321:
3213:
3716:
3691:
3498:
3463:
3420:
3339:
3179:
3136:
2887:
163:
131:
2952:, Robel et al. found that electrons transferred faster from the higher CdSe conduction band into TiO
267:: Using heterojuntions as photocatalyst have demostrated that they exibith better performance in CO
93:
35:
3632:
3195:
3152:
3067:
3033:
2911:
2098:
609:
375:
219:
175:
59:
3014:
Smith, C.G (1996). "Low-dimensional quantum devices". Rep. Prog. Phys. 59 (1996) 235282, pg 244.
2862:
382:). This model agrees well with systems where both materials are closely lattice matched such as
332:
3669:
3636:
3624:
3602:
3562:
3528:
3436:
3388:
3365:
3310:
3306:
3102:
3059:
3051:
2919:
619:
336:
245:
97:
54:
and transistors. The combination of multiple heterojunctions together in a device is called a
2986:
1316:
240:(HEMT) which can operate at significantly higher frequencies (over 500 GHz). The proper
101:
3724:
3699:
3594:
3554:
3506:
3471:
3428:
3347:
3298:
3277:
3246:
3187:
3144:
3094:
3043:
2946:
367:
159:
155:
3330:
J. Tersoff (1984). "Theory of semiconductor heterojunctions: The role of quantum dipoles".
1590:{\displaystyle A\cos({\frac {kl_{w}}{2}})=B\exp(-{\frac {\kappa l_{w}}{2}})\quad \quad (5)}
728:
584:
3682:
2970:
2942:
2926:
in the ZnS shell as suggested by its larger band gap. Since CdSe and ZnS both grow in the
352:
223:
135:
127:
3720:
3695:
3502:
3467:
3424:
3343:
3183:
3140:
3663:
3086:
2966:
570:
2898:(CdSe@ZnS) which has a straddling gap (type I) offset. In this system the much larger
3740:
3703:
3655:
3299:
3199:
3156:
3071:
2961:
2923:
2848:
The difference in effective mass between materials results in a larger difference in
562:
39:
545:
The typical method for measuring band offsets is by calculating them from measuring
311:
The behaviour of a semiconductor junction depends crucially on the alignment of the
284:
2982:
2915:
2849:
713:
574:
566:
550:
348:
317:
296:
167:
47:
3364:
Pallab, Bhattacharya (1997), Semiconductor
Optoelectronic Devices, Prentice Hall,
3382:
1313:
Solution for above equations are well-known, only with different(modified) k and
378:
from the conduction band of one material into the gap of the other (analogous to
3098:
2931:
2907:
2883:
312:
194:
191:
179:
3713:
International
Conference on Renewable Energy Research and Education (Rere-2018)
3680:
R. Tsu; F. Zypman (1990). "New insights in the physics of resonant tunneling".
752:
and center at 0, the equation for the achieved quantum well can be written as:
17:
3489:
Bendaniel, D.; Duke, C. (1966). "Space-Charge
Effects on Electron Tunneling".
3282:
3265:
257:
51:
3432:
3351:
3055:
577:
within the achieved quantum well, understanding variation or mismatch of the
288:
The three types of semiconductor heterojunctions organized by band alignment.
108:(HIT) solar cell structure was first developed in 1983 and commercialised by
3510:
3475:
3237:
Kroemer, H. (1963). "A proposed class of hetero-junction injection lasers".
3093:, vol. 301, Cham: Springer International Publishing, pp. 163â195,
475:
tends to maintain the value 60/40. For comparison, Anderson's rule predicts
171:
113:
3606:
3566:
3250:
3191:
3063:
3440:
700:{\displaystyle {\frac {1}{m^{*}}}{\partial \over {\partial z}}\psi (z)\,}
134:
could be greatly enhanced by heterostructures. By incorporating a smaller
3148:
3024:
Geim, A. K.; Grigorieva, I. V. (2013). "Van der Waals heterostructures".
2899:
43:
3047:
608:. In addition, in 1966, Conley et al. and BenDaniel and Duke reported a
374:
layer at the interface between the two semiconductors which arises from
546:
3728:
3598:
3558:
3659:
387:
371:
151:
3301:
1809:
Dividing (6) by (5), even-parity solution function can be obtained,
27:
Interface between two layers or regions of dissimilar semiconductors
3038:
2874: â sphere) and cadmium sulfide (CdS â rod) taken with a
2861:
291:
283:
214:: When a heterojunction is used as the base-emitter junction of a
123:
109:
2895:
383:
249:
237:
143:
139:
366:
where the conduction band offset is given by the difference in
170:
heterostructures. Furthermore, heterostructures can be used as
3715:. AIP Conference Proceedings. Vol. 1992. p. 040027.
3305:. United States of America: Oxford University Press. pp.
2891:
187:
2934:
structures such as the one seen in the image on the right.
2886:
the band energies are dependent on crystal size due to the
183:
70:
Heterojunction manufacturing generally requires the use of
2989:âa junction involving two types of the same semiconductor.
2866:
Image of a nanoscale heterojunction between iron oxide (Fe
1603:
By taking derivative of (5) and multiplying both sides by
339:). The main limitation is its neglect of chemical bonding.
3085:
Leu, SylvĂšre; Sontag, Detlef (2020), Shah, Arvind (ed.),
3629:
Wave Mechanics Applied to Semiconductor Heterostructures
3264:
Ortiz-Quiñonez, Jose-Luis; Pal, Umapada (October 2024).
320:
can be computed based on the usual procedure of solving
244:
profile and band alignment gives rise to extremely high
158:
with low threshold currents. It took many years for the
92:: Heterojunctions are formed through the interface of a
3087:"Crystalline Silicon Solar Cells: Heterojunction Cells"
130:, a prominent scientist in this field, suggested that
2698:
2409:
2115:
1964:
1820:
1647:
1609:
1495:
1453:
1343:
1319:
1134:
945:
763:
731:
651:
622:
587:
481:
433:
197:
are manufactured using alternating layers of various
327:
Various models exist to predict the band alignment.
530:{\displaystyle \Delta E_{C}/\Delta E_{V}=0.73/0.27}
2960:can occur since there the lowest energy state for
2837:
2679:
2385:
2083:
1939:
1795:
1629:
1589:
1476:
1433:
1325:
1300:
1119:
930:
744:
699:
637:
600:
529:
467:
3652:Heterojunctions and metalâsemiconductor junctions
561:When a heterojunction is formed by two different
3297:Ihn, Thomas (2010). "ch. 5.1 Band engineering".
42:. These semiconducting materials have unequal
8:
307:semiconductor heterojunction at equilibrium.
331:The simplest (and least accurate) model is
2995:âa junction of a metal to a semiconductor.
2101:, taking derivatives of (7) and (8) gives
707:are both continuous in interface regions.
3406:
3404:
3281:
3037:
2816:
2805:
2800:
2790:
2764:
2748:
2737:
2732:
2722:
2699:
2697:
2640:
2632:
2627:
2618:
2595:
2584:
2578:
2560:
2550:
2538:
2526:
2521:
2512:
2494:
2484:
2455:
2447:
2442:
2433:
2410:
2408:
2346:
2338:
2333:
2324:
2301:
2290:
2284:
2266:
2256:
2244:
2232:
2227:
2218:
2200:
2190:
2161:
2153:
2148:
2139:
2116:
2114:
2056:
2051:
2042:
2024:
2014:
1997:
1992:
1983:
1963:
1912:
1907:
1898:
1880:
1870:
1853:
1848:
1839:
1819:
1767:
1757:
1737:
1732:
1718:
1697:
1687:
1670:
1665:
1651:
1646:
1619:
1610:
1608:
1561:
1551:
1518:
1508:
1494:
1463:
1457:
1452:
1393:
1383:
1360:
1350:
1342:
1318:
1276:
1270:
1256:
1210:
1201:
1181:
1176:
1172:
1163:
1158:
1144:
1138:
1133:
1095:
1089:
1066:
1060:
1052:
1023:
1014:
994:
989:
985:
976:
971:
957:
951:
944:
906:
900:
886:
839:
830:
810:
805:
801:
792:
787:
773:
767:
762:
736:
730:
696:
674:
669:
661:
652:
650:
621:
592:
586:
519:
507:
495:
489:
480:
468:{\displaystyle \Delta E_{C}/\Delta E_{V}}
459:
447:
441:
432:
427:As side is varied from 0 to 1, the ratio
3587:Journal of the American Chemical Society
3580:
3578:
3576:
3547:Journal of the American Chemical Society
3384:Properties of Aluminium Gallium Arsenide
1484:even-parity solution can be gained from
142:between two larger band gap layers like
106:Heterojunction with Intrinsic Thin-Layer
3004:
2918:. There is an added bonus of increased
2829:
2755:
1415:
1370:
1141:
954:
770:
569:can be fabricated due to difference in
3650:Feucht, D. Lion; Milnes, A.G. (1970).
7:
3010:
3008:
1953:Similarly, for odd-parity solution,
712:Mathematical details worked out for
3172:Japanese Journal of Applied Physics
3129:Japanese Journal of Applied Physics
1477:{\displaystyle +{\frac {l_{w}}{2}}}
573:. In order to calculate the static
3214:"HJT - Heterojunction Solar Cells"
1630:{\displaystyle {\frac {1}{m^{*}}}}
1202:
1177:
1015:
990:
831:
806:
675:
671:
500:
482:
452:
434:
238:high electron mobility transistors
25:
3525:Introduction to Quantum Mechanics
2910:CdSe core thereby increasing the
228:heterojunction bipolar transistor
725:for a finite well with width of
208:to form lasing heterostructures.
126:was first proposed in 1963 when
96:substrate (band gap 1.1 eV) and
2763:
2762:
2761:
2661:
2660:
2367:
2366:
2071:
2070:
1927:
1926:
1783:
1782:
1577:
1576:
1421:
1420:
1376:
1375:
1288:
1287:
1255:
1107:
1106:
1051:
1050:
947:
946:
918:
917:
885:
884:
3270:Coordination Chemistry Reviews
2958:photoinduced charge separation
2674:
2662:
2572:
2547:
2506:
2481:
2380:
2368:
2278:
2253:
2212:
2187:
2078:
2072:
2036:
2011:
1974:
1968:
1934:
1928:
1892:
1867:
1830:
1824:
1790:
1784:
1779:
1751:
1709:
1684:
1584:
1578:
1573:
1545:
1530:
1505:
1428:
1422:
1411:
1399:
1295:
1289:
1252:
1246:
1234:
1228:
1196:
1190:
1114:
1108:
1047:
1041:
1009:
1003:
925:
919:
881:
875:
863:
857:
825:
819:
693:
687:
632:
626:
370:height. This model includes a
236:: Heterojunctions are used in
80:van der Waals heterostructures
62:and semiconducting materials.
1:
364:metalâsemiconductor junctions
362:model based on more familiar
3704:10.1016/0039-6028(90)90341-5
3523:Griffiths, David J. (2004).
3381:Adachi, Sadao (1993-01-01).
2993:Metalâsemiconductor junction
250:two dimensional electron gas
66:Manufacture and applications
34:is an interface between two
3099:10.1007/978-3-030-46487-5_7
216:bipolar junction transistor
122:: Using heterojunctions in
3763:
3527:(2nd ed.). Prentice Hall.
537:for a GaAs/AlAs junction (
226:. This device is called a
3283:10.1016/j.ccr.2024.215967
2858:Nanoscale heterojunctions
218:, extremely high forward
76:chemical vapor deposition
38:or regions of dissimilar
3747:Semiconductor structures
3433:10.1103/PhysRevB.40.1058
3352:10.1103/PhysRevB.30.4874
638:{\displaystyle \psi (z)}
380:metal-induced gap states
234:Field effect transistors
150:can be confined so that
3511:10.1103/PhysRev.152.683
3476:10.1103/PhysRev.150.466
3239:Proceedings of the IEEE
3091:Solar Cells and Modules
1326:{\displaystyle \kappa }
557:Effective mass mismatch
206:compound semiconductors
3251:10.1109/PROC.1963.2706
3192:10.7567/JJAP.57.08RB20
2937:The driving force for
2879:
2839:
2681:
2387:
2085:
1941:
1797:
1631:
1591:
1478:
1435:
1327:
1302:
1121:
932:
746:
701:
639:
602:
531:
469:
308:
289:
72:molecular beam epitaxy
2865:
2840:
2682:
2388:
2086:
1942:
1798:
1632:
1592:
1479:
1436:
1328:
1303:
1122:
933:
747:
745:{\displaystyle l_{w}}
702:
640:
603:
601:{\displaystyle l_{w}}
532:
470:
295:
287:
280:Energy band alignment
3149:10.1143/JJAP.22.L605
2922:due to the stronger
2888:quantum size effects
2696:
2407:
2113:
1962:
1818:
1645:
1607:
1493:
1451:
1341:
1317:
1132:
943:
761:
729:
723:Schrödinger equation
649:
620:
585:
479:
431:
164:quantum size effects
132:population inversion
3721:2018AIPC.1992d0027K
3696:1990SurSc.228..418T
3503:1966PhRv..152..683B
3468:1966PhRv..150..466C
3425:1989PhRvB..40.1058D
3344:1984PhRvB..30.4874T
3184:2018JaJAP..57hRB20Y
3141:1983JaJAP..22L.605O
3048:10.1038/nature12385
2973:with solar energy.
2969:, specifically for
2906:the surface of the
2810:
2742:
2637:
2531:
2452:
2343:
2237:
2158:
2061:
2002:
1917:
1858:
1742:
1675:
1168:
981:
797:
358:Tersoff proposed a
299:for stradding gap,
246:electron mobilities
212:Bipolar transistors
94:crystalline silicon
3633:Wiley-Interscience
3218:Solar Power Panels
2912:quantum efficiency
2880:
2835:
2796:
2728:
2677:
2623:
2517:
2438:
2383:
2329:
2223:
2144:
2099:numerical solution
2081:
2047:
1988:
1937:
1903:
1844:
1793:
1728:
1661:
1627:
1587:
1474:
1431:
1323:
1298:
1154:
1117:
967:
928:
783:
742:
697:
635:
610:boundary condition
598:
527:
465:
376:electron tunneling
322:Poisson's equation
309:
290:
256:where very little
254:dopant free region
60:fast ion conductor
3729:10.1063/1.5047992
3642:978-0-470-21708-5
3599:10.1021/ja070099a
3559:10.1021/ja068351m
3413:Physical Review B
3332:Physical Review B
3245:(12): 1782â1783.
3108:978-3-030-46485-1
3032:(7459): 419â425.
2920:thermal stability
2833:
2827:
2811:
2782:
2759:
2753:
2743:
2717:
2658:
2638:
2613:
2593:
2570:
2532:
2504:
2473:
2453:
2428:
2364:
2344:
2319:
2299:
2276:
2238:
2210:
2179:
2159:
2134:
2062:
2034:
2003:
1918:
1890:
1859:
1777:
1743:
1707:
1676:
1625:
1571:
1528:
1472:
1418:
1414:
1373:
1369:
1285:
1259:
1217:
1170:
1104:
1075:
1055:
1030:
983:
915:
889:
846:
799:
682:
667:
614:envelope function
344:common anion rule
337:electron affinity
271:photoreduction, H
98:amorphous silicon
16:(Redirected from
3754:
3732:
3707:
3667:
3646:
3611:
3610:
3582:
3571:
3570:
3553:(38): 11708â19.
3541:
3535:
3521:
3515:
3514:
3486:
3480:
3479:
3451:
3445:
3444:
3419:(2): 1058â1063.
3408:
3399:
3398:
3378:
3372:
3362:
3356:
3355:
3338:(8): 4874â4877.
3327:
3321:
3320:
3304:
3294:
3288:
3287:
3285:
3261:
3255:
3254:
3234:
3228:
3227:
3225:
3224:
3210:
3204:
3203:
3167:
3161:
3160:
3135:(9): L605âL607.
3124:
3118:
3117:
3116:
3115:
3082:
3076:
3075:
3041:
3021:
3015:
3012:
2943:conduction bands
2844:
2842:
2841:
2836:
2834:
2832:
2828:
2817:
2809:
2804:
2792:
2791:
2783:
2781:
2773:
2765:
2760:
2758:
2754:
2749:
2741:
2736:
2724:
2723:
2718:
2716:
2708:
2700:
2686:
2684:
2683:
2678:
2659:
2657:
2649:
2641:
2639:
2636:
2631:
2619:
2614:
2612:
2604:
2596:
2594:
2589:
2588:
2579:
2571:
2566:
2565:
2564:
2551:
2543:
2542:
2533:
2530:
2525:
2513:
2505:
2500:
2499:
2498:
2485:
2474:
2472:
2464:
2456:
2454:
2451:
2446:
2434:
2429:
2427:
2419:
2411:
2392:
2390:
2389:
2384:
2365:
2363:
2355:
2347:
2345:
2342:
2337:
2325:
2320:
2318:
2310:
2302:
2300:
2295:
2294:
2285:
2277:
2272:
2271:
2270:
2257:
2249:
2248:
2239:
2236:
2231:
2219:
2211:
2206:
2205:
2204:
2191:
2180:
2178:
2170:
2162:
2160:
2157:
2152:
2140:
2135:
2133:
2125:
2117:
2090:
2088:
2087:
2082:
2063:
2060:
2055:
2043:
2035:
2030:
2029:
2028:
2015:
2004:
2001:
1996:
1984:
1946:
1944:
1943:
1938:
1919:
1916:
1911:
1899:
1891:
1886:
1885:
1884:
1871:
1860:
1857:
1852:
1840:
1802:
1800:
1799:
1794:
1778:
1773:
1772:
1771:
1758:
1744:
1741:
1736:
1727:
1719:
1708:
1703:
1702:
1701:
1688:
1677:
1674:
1669:
1660:
1652:
1636:
1634:
1633:
1628:
1626:
1624:
1623:
1611:
1596:
1594:
1593:
1588:
1572:
1567:
1566:
1565:
1552:
1529:
1524:
1523:
1522:
1509:
1483:
1481:
1480:
1475:
1473:
1468:
1467:
1458:
1440:
1438:
1437:
1432:
1419:
1398:
1397:
1385:
1384:
1374:
1365:
1364:
1352:
1351:
1332:
1330:
1329:
1324:
1307:
1305:
1304:
1299:
1286:
1281:
1280:
1271:
1260:
1257:
1218:
1216:
1215:
1214:
1205:
1199:
1186:
1185:
1180:
1173:
1171:
1169:
1167:
1162:
1149:
1148:
1139:
1126:
1124:
1123:
1118:
1105:
1100:
1099:
1090:
1076:
1071:
1070:
1061:
1056:
1053:
1031:
1029:
1028:
1027:
1018:
1012:
999:
998:
993:
986:
984:
982:
980:
975:
962:
961:
952:
937:
935:
934:
929:
916:
911:
910:
901:
890:
887:
847:
845:
844:
843:
834:
828:
815:
814:
809:
802:
800:
798:
796:
791:
778:
777:
768:
751:
749:
748:
743:
741:
740:
706:
704:
703:
698:
683:
681:
670:
668:
666:
665:
653:
644:
642:
641:
636:
607:
605:
604:
599:
597:
596:
549:energies in the
536:
534:
533:
528:
523:
512:
511:
499:
494:
493:
474:
472:
471:
466:
464:
463:
451:
446:
445:
368:Schottky barrier
224:leakage currents
160:material science
156:room temperature
46:as opposed to a
21:
3762:
3761:
3757:
3756:
3755:
3753:
3752:
3751:
3737:
3736:
3735:
3710:
3683:Surface Science
3679:
3649:
3643:
3625:Bastard, GĂ©rald
3623:
3619:
3617:Further reading
3614:
3584:
3583:
3574:
3543:
3542:
3538:
3522:
3518:
3491:Physical Review
3488:
3487:
3483:
3456:Physical Review
3453:
3452:
3448:
3410:
3409:
3402:
3395:
3380:
3379:
3375:
3363:
3359:
3329:
3328:
3324:
3317:
3296:
3295:
3291:
3263:
3262:
3258:
3236:
3235:
3231:
3222:
3220:
3212:
3211:
3207:
3178:(8S3): 08RB20.
3169:
3168:
3164:
3126:
3125:
3121:
3113:
3111:
3109:
3084:
3083:
3079:
3023:
3022:
3018:
3013:
3006:
3002:
2979:
2971:water splitting
2955:
2950:
2939:charge transfer
2873:
2869:
2860:
2855:
2854:
2812:
2774:
2766:
2744:
2709:
2701:
2694:
2693:
2650:
2642:
2605:
2597:
2580:
2556:
2552:
2534:
2490:
2486:
2465:
2457:
2420:
2412:
2405:
2404:
2356:
2348:
2311:
2303:
2286:
2262:
2258:
2240:
2196:
2192:
2171:
2163:
2126:
2118:
2111:
2110:
2020:
2016:
1960:
1959:
1876:
1872:
1816:
1815:
1763:
1759:
1720:
1693:
1689:
1653:
1643:
1642:
1615:
1605:
1604:
1557:
1553:
1514:
1510:
1491:
1490:
1459:
1449:
1448:
1389:
1356:
1339:
1338:
1315:
1314:
1272:
1258: for
1206:
1200:
1175:
1174:
1150:
1140:
1130:
1129:
1091:
1062:
1054: for
1019:
1013:
988:
987:
963:
953:
941:
940:
902:
888: for
835:
829:
804:
803:
779:
769:
759:
758:
732:
727:
726:
718:
717:
657:
647:
646:
618:
617:
588:
583:
582:
559:
503:
485:
477:
476:
455:
437:
429:
428:
426:
419:
409:
402:
353:conduction band
333:Anderson's rule
282:
274:
270:
136:direct band gap
128:Herbert Kroemer
68:
56:heterostructure
28:
23:
22:
18:Heterostructure
15:
12:
11:
5:
3760:
3758:
3750:
3749:
3739:
3738:
3734:
3733:
3708:
3677:
3664:Academic Press
3647:
3641:
3620:
3618:
3615:
3613:
3612:
3593:(14): 4136â7.
3572:
3536:
3516:
3481:
3446:
3400:
3393:
3373:
3357:
3322:
3315:
3289:
3256:
3229:
3205:
3162:
3119:
3107:
3077:
3016:
3003:
3001:
2998:
2997:
2996:
2990:
2978:
2975:
2967:photocatalysis
2953:
2948:
2871:
2867:
2859:
2856:
2831:
2826:
2823:
2820:
2815:
2808:
2803:
2799:
2795:
2789:
2786:
2780:
2777:
2772:
2769:
2757:
2752:
2747:
2740:
2735:
2731:
2727:
2721:
2715:
2712:
2707:
2704:
2690:
2689:
2688:
2687:
2676:
2673:
2670:
2667:
2664:
2656:
2653:
2648:
2645:
2635:
2630:
2626:
2622:
2617:
2611:
2608:
2603:
2600:
2592:
2587:
2583:
2577:
2574:
2569:
2563:
2559:
2555:
2549:
2546:
2541:
2537:
2529:
2524:
2520:
2516:
2511:
2508:
2503:
2497:
2493:
2489:
2483:
2480:
2477:
2471:
2468:
2463:
2460:
2450:
2445:
2441:
2437:
2432:
2426:
2423:
2418:
2415:
2396:
2395:
2394:
2393:
2382:
2379:
2376:
2373:
2370:
2362:
2359:
2354:
2351:
2341:
2336:
2332:
2328:
2323:
2317:
2314:
2309:
2306:
2298:
2293:
2289:
2283:
2280:
2275:
2269:
2265:
2261:
2255:
2252:
2247:
2243:
2235:
2230:
2226:
2222:
2217:
2214:
2209:
2203:
2199:
2195:
2189:
2186:
2183:
2177:
2174:
2169:
2166:
2156:
2151:
2147:
2143:
2138:
2132:
2129:
2124:
2121:
2095:
2094:
2093:
2092:
2080:
2077:
2074:
2069:
2066:
2059:
2054:
2050:
2046:
2041:
2038:
2033:
2027:
2023:
2019:
2013:
2010:
2007:
2000:
1995:
1991:
1987:
1982:
1979:
1976:
1973:
1970:
1967:
1951:
1950:
1949:
1948:
1936:
1933:
1930:
1925:
1922:
1915:
1910:
1906:
1902:
1897:
1894:
1889:
1883:
1879:
1875:
1869:
1866:
1863:
1856:
1851:
1847:
1843:
1838:
1835:
1832:
1829:
1826:
1823:
1807:
1806:
1805:
1804:
1792:
1789:
1786:
1781:
1776:
1770:
1766:
1762:
1756:
1753:
1750:
1747:
1740:
1735:
1731:
1726:
1723:
1717:
1714:
1711:
1706:
1700:
1696:
1692:
1686:
1683:
1680:
1673:
1668:
1664:
1659:
1656:
1650:
1622:
1618:
1614:
1601:
1600:
1599:
1598:
1586:
1583:
1580:
1575:
1570:
1564:
1560:
1556:
1550:
1547:
1544:
1541:
1538:
1535:
1532:
1527:
1521:
1517:
1513:
1507:
1504:
1501:
1498:
1471:
1466:
1462:
1456:
1445:
1444:
1443:
1442:
1430:
1427:
1424:
1417:
1413:
1410:
1407:
1404:
1401:
1396:
1392:
1388:
1382:
1379:
1372:
1368:
1363:
1359:
1355:
1349:
1346:
1322:
1311:
1310:
1309:
1308:
1297:
1294:
1291:
1284:
1279:
1275:
1269:
1266:
1263:
1254:
1251:
1248:
1245:
1242:
1239:
1236:
1233:
1230:
1227:
1224:
1221:
1213:
1209:
1204:
1198:
1195:
1192:
1189:
1184:
1179:
1166:
1161:
1157:
1153:
1147:
1143:
1137:
1127:
1116:
1113:
1110:
1103:
1098:
1094:
1088:
1085:
1082:
1079:
1074:
1069:
1065:
1059:
1049:
1046:
1043:
1040:
1037:
1034:
1026:
1022:
1017:
1011:
1008:
1005:
1002:
997:
992:
979:
974:
970:
966:
960:
956:
950:
938:
927:
924:
921:
914:
909:
905:
899:
896:
893:
883:
880:
877:
874:
871:
868:
865:
862:
859:
856:
853:
850:
842:
838:
833:
827:
824:
821:
818:
813:
808:
795:
790:
786:
782:
776:
772:
766:
739:
735:
719:
711:
710:
709:
695:
692:
689:
686:
680:
677:
673:
664:
660:
656:
634:
631:
628:
625:
595:
591:
579:effective mass
571:band structure
563:semiconductors
558:
555:
543:
542:
526:
522:
518:
515:
510:
506:
502:
498:
492:
488:
484:
462:
458:
454:
450:
444:
440:
436:
421:
415:
404:
398:
391:
356:
340:
281:
278:
272:
268:
262:
261:
248:by creating a
231:
209:
138:material like
117:
67:
64:
40:semiconductors
32:heterojunction
26:
24:
14:
13:
10:
9:
6:
4:
3:
2:
3759:
3748:
3745:
3744:
3742:
3730:
3726:
3722:
3718:
3714:
3709:
3705:
3701:
3697:
3693:
3689:
3685:
3684:
3678:
3675:
3674:0-12-498050-3
3671:
3665:
3661:
3657:
3656:New York City
3653:
3648:
3644:
3638:
3634:
3630:
3626:
3622:
3621:
3616:
3608:
3604:
3600:
3596:
3592:
3588:
3581:
3579:
3577:
3573:
3568:
3564:
3560:
3556:
3552:
3548:
3540:
3537:
3534:
3533:0-13-111892-7
3530:
3526:
3520:
3517:
3512:
3508:
3504:
3500:
3496:
3492:
3485:
3482:
3477:
3473:
3469:
3465:
3461:
3457:
3450:
3447:
3442:
3438:
3434:
3430:
3426:
3422:
3418:
3414:
3407:
3405:
3401:
3396:
3394:9780852965580
3390:
3386:
3385:
3377:
3374:
3371:
3370:0-13-495656-7
3367:
3361:
3358:
3353:
3349:
3345:
3341:
3337:
3333:
3326:
3323:
3318:
3316:9780199534432
3312:
3308:
3303:
3302:
3293:
3290:
3284:
3279:
3275:
3271:
3267:
3260:
3257:
3252:
3248:
3244:
3240:
3233:
3230:
3219:
3215:
3209:
3206:
3201:
3197:
3193:
3189:
3185:
3181:
3177:
3173:
3166:
3163:
3158:
3154:
3150:
3146:
3142:
3138:
3134:
3130:
3123:
3120:
3110:
3104:
3100:
3096:
3092:
3088:
3081:
3078:
3073:
3069:
3065:
3061:
3057:
3053:
3049:
3045:
3040:
3035:
3031:
3027:
3020:
3017:
3011:
3009:
3005:
2999:
2994:
2991:
2988:
2984:
2981:
2980:
2976:
2974:
2972:
2968:
2963:
2959:
2951:
2944:
2940:
2935:
2933:
2929:
2925:
2921:
2917:
2913:
2909:
2905:
2901:
2897:
2893:
2889:
2885:
2877:
2864:
2857:
2853:
2851:
2846:
2824:
2821:
2818:
2813:
2806:
2801:
2797:
2793:
2787:
2784:
2778:
2775:
2770:
2767:
2750:
2745:
2738:
2733:
2729:
2725:
2719:
2713:
2710:
2705:
2702:
2671:
2668:
2665:
2654:
2651:
2646:
2643:
2633:
2628:
2624:
2620:
2615:
2609:
2606:
2601:
2598:
2590:
2585:
2581:
2575:
2567:
2561:
2557:
2553:
2544:
2539:
2535:
2527:
2522:
2518:
2514:
2509:
2501:
2495:
2491:
2487:
2478:
2475:
2469:
2466:
2461:
2458:
2448:
2443:
2439:
2435:
2430:
2424:
2421:
2416:
2413:
2403:
2402:
2401:
2400:
2399:
2377:
2374:
2371:
2360:
2357:
2352:
2349:
2339:
2334:
2330:
2326:
2321:
2315:
2312:
2307:
2304:
2296:
2291:
2287:
2281:
2273:
2267:
2263:
2259:
2250:
2245:
2241:
2233:
2228:
2224:
2220:
2215:
2207:
2201:
2197:
2193:
2184:
2181:
2175:
2172:
2167:
2164:
2154:
2149:
2145:
2141:
2136:
2130:
2127:
2122:
2119:
2109:
2108:
2107:
2106:
2105:
2104:even parity:
2102:
2100:
2075:
2067:
2064:
2057:
2052:
2048:
2044:
2039:
2031:
2025:
2021:
2017:
2008:
2005:
1998:
1993:
1989:
1985:
1980:
1977:
1971:
1965:
1958:
1957:
1956:
1955:
1954:
1931:
1923:
1920:
1913:
1908:
1904:
1900:
1895:
1887:
1881:
1877:
1873:
1864:
1861:
1854:
1849:
1845:
1841:
1836:
1833:
1827:
1821:
1814:
1813:
1812:
1811:
1810:
1787:
1774:
1768:
1764:
1760:
1754:
1748:
1745:
1738:
1733:
1729:
1724:
1721:
1715:
1712:
1704:
1698:
1694:
1690:
1681:
1678:
1671:
1666:
1662:
1657:
1654:
1648:
1641:
1640:
1639:
1638:
1637:
1620:
1616:
1612:
1581:
1568:
1562:
1558:
1554:
1548:
1542:
1539:
1536:
1533:
1525:
1519:
1515:
1511:
1502:
1499:
1496:
1489:
1488:
1487:
1486:
1485:
1469:
1464:
1460:
1454:
1425:
1408:
1405:
1402:
1394:
1390:
1386:
1380:
1377:
1366:
1361:
1357:
1353:
1347:
1344:
1337:
1336:
1335:
1334:
1333:
1320:
1292:
1282:
1277:
1273:
1267:
1264:
1261:
1249:
1243:
1240:
1237:
1231:
1225:
1222:
1219:
1211:
1207:
1193:
1187:
1182:
1164:
1159:
1155:
1151:
1145:
1135:
1128:
1111:
1101:
1096:
1092:
1086:
1083:
1080:
1077:
1072:
1067:
1063:
1057:
1044:
1038:
1035:
1032:
1024:
1020:
1006:
1000:
995:
977:
972:
968:
964:
958:
948:
939:
922:
912:
907:
903:
897:
894:
891:
878:
872:
869:
866:
860:
854:
851:
848:
840:
836:
822:
816:
811:
793:
788:
784:
780:
774:
764:
757:
756:
755:
754:
753:
737:
733:
724:
715:
708:
690:
684:
678:
662:
658:
654:
629:
623:
615:
611:
593:
589:
580:
576:
575:energy levels
572:
568:
564:
556:
554:
552:
548:
540:
524:
520:
516:
513:
508:
504:
496:
490:
486:
460:
456:
448:
442:
438:
425:
418:
413:
408:
401:
396:
392:
389:
385:
381:
377:
373:
369:
365:
361:
357:
354:
351:offsets than
350:
345:
341:
338:
334:
330:
329:
328:
325:
323:
319:
314:
306:
302:
298:
294:
286:
279:
277:
266:
259:
255:
251:
247:
243:
239:
235:
232:
229:
225:
221:
217:
213:
210:
207:
204:
200:
196:
193:
189:
185:
181:
177:
173:
169:
165:
161:
157:
154:can occur at
153:
149:
145:
141:
137:
133:
129:
125:
121:
118:
115:
111:
107:
103:
99:
95:
91:
88:
87:
86:
83:
81:
77:
73:
65:
63:
61:
57:
53:
49:
45:
41:
37:
33:
19:
3712:
3690:(1â3): 418.
3687:
3681:
3651:
3628:
3590:
3586:
3550:
3546:
3539:
3524:
3519:
3494:
3490:
3484:
3459:
3455:
3449:
3416:
3412:
3383:
3376:
3360:
3335:
3331:
3325:
3300:
3292:
3273:
3269:
3259:
3242:
3238:
3232:
3221:. Retrieved
3217:
3208:
3175:
3171:
3165:
3132:
3128:
3122:
3112:, retrieved
3090:
3080:
3029:
3025:
3019:
2987:pân junction
2983:Homojunction
2936:
2916:luminescence
2884:quantum dots
2881:
2850:ground state
2847:
2691:
2398:odd parity:
2397:
2103:
2096:
1952:
1808:
1602:
1446:
1312:
720:
714:quantum well
567:quantum well
560:
551:luminescence
544:
538:
423:
416:
411:
406:
399:
394:
359:
349:valence band
343:
326:
318:band bending
313:energy bands
310:
304:
300:
297:Band diagram
264:
263:
233:
211:
195:transceivers
190:players and
180:diode lasers
168:quantum well
119:
102:pân junction
89:
84:
69:
55:
48:homojunction
31:
29:
2932:anisotropic
2908:fluorescent
1447:At the z =
410:As. As the
192:fiber optic
90:Solar cells
52:solar cells
3497:(2): 683.
3462:(2): 466.
3276:: 215967.
3223:2022-03-25
3114:2023-04-18
3000:References
2928:zincblende
2904:passivates
2852:energies.
721:Using the
395:60:40 rule
260:can occur.
258:scattering
176:index step
172:waveguides
3200:125265042
3157:121569675
3072:205234832
3056:0028-0836
3039:1307.6718
2830:ℏ
2822:−
2807:∗
2788:−
2771:κ
2756:ℏ
2739:∗
2669:−
2647:κ
2634:∗
2576:×
2545:
2528:∗
2510:−
2479:
2449:∗
2375:−
2353:κ
2340:∗
2322:−
2282:×
2251:
2234:∗
2185:
2155:∗
2058:∗
2045:κ
2009:
1999:∗
1981:−
1914:∗
1901:κ
1896:−
1865:
1855:∗
1837:−
1761:κ
1755:−
1749:
1739:∗
1722:κ
1716:−
1682:
1672:∗
1649:−
1621:∗
1555:κ
1549:−
1543:
1503:
1416:ℏ
1406:−
1378:κ
1371:ℏ
1321:κ
1244:ψ
1226:ψ
1188:ψ
1165:∗
1142:ℏ
1136:−
1058:−
1039:ψ
1001:ψ
978:∗
955:ℏ
949:−
898:−
873:ψ
855:ψ
817:ψ
794:∗
771:ℏ
765:−
685:ψ
676:∂
672:∂
663:∗
624:ψ
553:spectra.
501:Δ
483:Δ
453:Δ
435:Δ
414:in the Al
360:gap state
265:Catalysis
252:within a
114:Panasonic
74:(MBE) or
44:band gaps
3741:Category
3627:(1991).
3607:17373799
3567:17727285
3064:23887427
2977:See also
2941:between
2900:band gap
716:example.
612:for the
355:offsets.
182:used in
148:carriers
3717:Bibcode
3692:Bibcode
3499:Bibcode
3464:Bibcode
3441:9991928
3421:Bibcode
3340:Bibcode
3180:Bibcode
3137:Bibcode
2914:of the
547:exciton
174:to the
3672:
3660:London
3639:
3605:
3565:
3531:
3439:
3391:
3368:
3313:
3198:
3155:
3105:
3070:
3062:
3054:
3026:Nature
2692:where
388:AlGaAs
372:dipole
242:doping
230:(HBT).
152:lasing
124:lasers
120:Lasers
104:. The
36:layers
3196:S2CID
3153:S2CID
3068:S2CID
3034:arXiv
2962:holes
2924:bonds
203:II-VI
199:III-V
110:Sanyo
3670:ISBN
3658:and
3637:ISBN
3603:PMID
3563:PMID
3529:ISBN
3437:PMID
3389:ISBN
3366:ISBN
3311:ISBN
3103:ISBN
3060:PMID
3052:ISSN
2902:ZnS
2896:CdSe
2097:For
1265:>
1084:<
1078:<
895:<
645:and
565:, a
541:=1).
525:0.27
517:0.73
393:The
384:GaAs
220:gain
201:and
186:and
144:AlAs
140:GaAs
3725:doi
3700:doi
3688:228
3595:doi
3591:129
3555:doi
3551:129
3507:doi
3495:152
3472:doi
3460:150
3429:doi
3348:doi
3278:doi
3274:516
3247:doi
3188:doi
3145:doi
3095:doi
3044:doi
3030:499
2947:TiO
2894:on
2892:ZnS
2882:In
2876:TEM
2536:csc
2476:cot
2242:sec
2182:tan
2006:cot
1862:tan
1746:exp
1679:sin
1540:exp
1500:cos
188:DVD
166:in
3743::
3723:.
3698:.
3686:.
3668:,
3662::
3654:.
3635:.
3631:.
3601:.
3589:.
3575:^
3561:.
3549:.
3505:.
3493:.
3470:.
3458:.
3435:.
3427:.
3417:40
3415:.
3403:^
3387:.
3346:.
3336:30
3334:.
3309:.
3307:66
3272:.
3268:.
3243:51
3241:.
3216:.
3194:.
3186:.
3176:57
3174:.
3151:.
3143:.
3133:22
3131:.
3101:,
3089:,
3066:.
3058:.
3050:.
3042:.
3028:.
3007:^
2985:,
2845:.
422:1â
420:Ga
405:1â
403:Ga
342:A
324:.
184:CD
146:,
82:.
30:A
3731:.
3727::
3719::
3706:.
3702::
3694::
3666:.
3645:.
3609:.
3597::
3569:.
3557::
3513:.
3509::
3501::
3478:.
3474::
3466::
3443:.
3431::
3423::
3397:.
3354:.
3350::
3342::
3319:.
3286:.
3280::
3253:.
3249::
3226:.
3202:.
3190::
3182::
3159:.
3147::
3139::
3097::
3074:.
3046::
3036::
2954:2
2949:2
2872:4
2870:O
2868:3
2825:E
2819:V
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2802:b
2798:m
2794:2
2785:=
2779:E
2776:d
2768:d
2751:E
2746:2
2734:w
2730:m
2726:2
2720:=
2714:E
2711:d
2706:k
2703:d
2675:)
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2666:9
2663:(
2655:E
2652:d
2644:d
2629:b
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2607:d
2602:k
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2470:E
2467:d
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2431:=
2425:E
2422:d
2417:f
2414:d
2381:)
2378:1
2372:9
2369:(
2361:E
2358:d
2350:d
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2327:1
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2308:k
2305:d
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2279:)
2274:2
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2254:(
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2208:2
2202:w
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2188:(
2176:E
2173:d
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2137:=
2131:E
2128:d
2123:f
2120:d
2091:.
2079:)
2076:8
2073:(
2068:0
2065:=
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2037:)
2032:2
2026:w
2022:l
2018:k
2012:(
1994:w
1990:m
1986:k
1978:=
1975:)
1972:E
1969:(
1966:f
1947:.
1935:)
1932:7
1929:(
1924:0
1921:=
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1905:m
1893:)
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1878:l
1874:k
1868:(
1850:w
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1828:E
1825:(
1822:f
1803:.
1791:)
1788:6
1785:(
1780:)
1775:2
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1752:(
1734:b
1730:m
1725:B
1713:=
1710:)
1705:2
1699:w
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1685:(
1667:w
1663:m
1658:A
1655:k
1617:m
1613:1
1597:.
1585:)
1582:5
1579:(
1574:)
1569:2
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1559:l
1546:(
1537:B
1534:=
1531:)
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1497:A
1470:2
1465:w
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1455:+
1441:.
1429:)
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1423:(
1412:)
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1403:V
1400:(
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1381:=
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1348:=
1345:k
1296:)
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1290:(
1283:2
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1253:)
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1238:=
1235:)
1232:z
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1191:(
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991:d
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861:z
858:(
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841:2
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812:2
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691:z
688:(
679:z
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630:z
627:(
594:w
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521:/
514:=
509:V
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497:/
491:C
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449:/
443:C
439:E
424:x
417:x
412:x
407:x
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390:.
386:/
305:n
303:-
301:n
273:2
269:2
112:/
20:)
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