946:
961:. Physical surface-potential-based formulations are derived for both intrinsic and extrinsic models with finite body doping. The surface potentials at the source and drain ends are solved analytically with poly-depletion and quantum mechanical effects. The effect of finite body doping is captured through a perturbation approach. The analytic surface potential solution agrees closely with the 2-D device simulation results. If the channel doping concentration is low enough to be neglected, computational efficiency can be further improved by a setting a specific flag (COREMOD = 1).
508:). The FinFET is a variation on traditional MOSFETs distinguished by the presence of a thin silicon "fin" inversion channel on top of the substrate, allowing the gate to make two points of contact: the left and right sides of the fin. The thickness of the fin (measured in the direction from source to drain) determines the effective channel length of the device. The wrap-around gate structure provides a better electrical control over the channel and thus helps in reducing the leakage current and overcoming other
486:
766:, which feature tri-gate transistors. Intel has been working on its tri-gate architecture since 2002, but it took until 2011 to work out mass-production issues. The new style of transistor was described on May 4, 2011, in San Francisco. It was announced that Intel's factories were expected to make upgrades over 2011 and 2012 to be able to manufacture the Ivy Bridge CPUs. It was announced that the new transistors would also be used in Intel's
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current. Multigate transistors also provide a better analog performance due to a higher intrinsic gain and lower channel length modulation. These advantages translate to lower power consumption and enhanced device performance. Nonplanar devices are also more compact than conventional planar transistors, enabling higher transistor density which translates to smaller overall microelectronics.
175:
471:
399:
968:, hence the subsequent I–V formulation automatically captures the volume-inversion effect. Analysis of electrostatic potential in the body of MG MOSFETs provided a model equation for short-channel effects (SCE). The extra electrostatic control from the end gates (top/bottom gates) (triple or quadruple-gate) is also captured in the short-channel model.
444:
true double-gate transistor in that (1) both the top and bottom gates provide transistor operation, and (2) the operation of the gates is coupled such that the top gate operation affects the bottom gate operation and vice versa. FlexFET was developed and is manufactured by
American Semiconductor, Inc.
904:
node for its foundry customers. Intel is also developing RibbonFET, a variation of MBCFET "nanoribbon" transistors. Unlike FinFETs, both the width and the number of the sheets can be varied to adjust drive strength or the amount of current the transistor can drive at a given voltage. The sheets often
443:
metal top gate MOSFET and an implanted JFET bottom gate that are self-aligned in a gate trench. This device is highly scalable due to its sub-lithographic channel length; non-implanted ultra-shallow source and drain extensions; non-epi raised source and drain regions; and gate-last flow. FlexFET is a
804:
Intel explains: "The additional control enables as much transistor current flowing as possible when the transistor is in the 'on' state (for performance), and as close to zero as possible when it is in the 'off' state (to minimize power), and enables the transistor to switch very quickly between the
649:
In 2012, Intel started using FinFETs for its future commercial devices. Leaks suggest that Intel's FinFET has an unusual shape of a triangle rather than rectangle, and it is speculated that this might be either because a triangle has a higher structural strength and can be more reliably manufactured
427:
requirements associated with non-planar, vertical transistor structures. In planar double-gate transistors the drain–source channel is sandwiched between two independently fabricated gate/gate-oxide stacks. The primary challenge in fabricating such structures is achieving satisfactory self-alignment
916:
have been the core of integrated circuits for several decades, during which the size of the individual transistors has steadily decreased. As the size decreases, planar transistors increasingly suffer from the undesirable short-channel effect, especially "off-state" leakage current, which increases
920:
In a multigate device, the channel is surrounded by several gates on multiple surfaces. Thus it provides better electrical control over the channel, allowing more effective suppression of "off-state" leakage current. Multiple gates also allow enhanced current in the "on" state, also known as drive
706:
released GPUs using their
Polaris chip architecture and made on 14 nm FinFET in June 2016. The company has tried to produce a design to provide a "generational jump in power efficiency" while also offering stable frame rates for graphics, gaming, virtual reality, and multimedia applications.
582:
avoids using the term when describing their closely related tri-gate architecture. In the technical literature, FinFET is used somewhat generically to describe any fin-based, multigate transistor architecture regardless of number of gates. It is common for a single FinFET transistor to contain
834:
GAAFET, also known as a surrounding-gate transistor (SGT), is similar in concept to a FinFET except that the gate material surrounds the channel region on all sides. Depending on design, gate-all-around FETs can have two or four effective gates. Gate-all-around FETs have been successfully
754:
announced that it was working on similar technology at the
International Conference on Solid State Devices and Materials. No further announcements of this technology were made until Intel's announcement in May 2011, although it was stated at IDF 2011, that they demonstrated a working
240:
on a single transistor. The multiple gates may be controlled by a single gate electrode, wherein the multiple gate surfaces act electrically as a single gate, or by independent gate electrodes. A multigate device employing independent gate electrodes is sometimes called a
899:
A multi-bridge channel FET (MBCFET) is similar to a GAAFET except for the use of nanosheets instead of nanowires. MBCFET is a word mark (trademark) registered in the U.S. to
Samsung Electronics. Samsung plans on mass producing MBCFET transistors at the
890:
As of 2020, Samsung and Intel have announced plans to mass produce GAAFET transistors (specifically MBCFET transistors) while TSMC has announced that they will continue to use FinFETs in their 3 nm node, despite TSMC developing GAAFET transistors.
2212:
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Dozens of multigate transistor variants may be found in the literature. In general, these variants may be differentiated and classified in terms of architecture (planar vs. non-planar design) and the number of channels/gates (2, 3, or 4).
2323:
Singh, N.; Agarwal, A.; Bera, L. K.; Liow, T. Y.; Yang, R.; Rustagi, S. C.; Tung, C. H.; Kumar, R.; Lo, G. Q.; Balasubramanian, N.; Kwong, D. (2006). "High-Performance fully depleted
Silicon Nanowire Gate-All-Around CMOS devices".
2796:
886:
have been demonstrated which allow for improved performance and/or reduced device footprint. The widths of the nanosheets in GAAFETs is controllable which more easily allows for the adjustment of device characteristics.
523:'s Digh Hisamoto, Toru Kaga, Yoshifumi Kawamoto and Eiji Takeda in 1989. In the late 1990s, Digh Hisamoto began collaborating with an international team of researchers on further developing DELTA technology, including
749:
Intel announced this technology in
September 2002. Intel announced "triple-gate transistors" which maximize "transistor switching performance and decreases power-wasting leakage". A year later, in September 2003,
2196:
645:
researchers Masoud
Rostami and Kartik Mohanram demonstrated that FINFETs can have two electrically independent gates, which gives circuit designers more flexibility to design with efficient, low-power gates.
2479:; Takato, Hiroshi; Sunouchi, Kazumasa; Okabe, N.; Nitayama, Akihiro; Hieda, K.; Horiguchi, Fumio (December 1988). "High performance CMOS surrounding gate transistor (SGT) for ultra high density LSIs".
789:
processors. These transistors employ a single gate stacked on top of two vertical gates (a single gate wrapped over three sides of the channel), allowing essentially three times the surface area for
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several fins, arranged side by side and all covered by the same gate, that act electrically as one, to increase drive strength and performance. The gate may also cover the entirety of the fin(s).
2033:
233:
543:, Xuejue Huang, Leland Chang, Nick Lindert, S. Ahmed, Cyrus Tabery, Yang-Kyu Choi, Pushkar Ranade, Sriram Balasubramanian, A. Agarwal and M. Ameen. In 1998, the team developed the first
1710:
858:, Hiroshi Takato, and Kazumasa Sunouchi, who demonstrated a vertical nanowire GAAFET which they called a "surrounding gate transistor" (SGT). Masuoka, best known as the inventor of
2832:
1883:
Hieda, K.; Horiguchi, Fumio; Watanabe, H.; Sunouchi, Kazumasa; Inoue, I.; Hamamoto, Takeshi (December 1987). "New effects of trench isolated transistor using side-wall gates".
344:
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transistor, also known as a triple-gate transistor, is a type of MOSFET with a gate on three of its sides. A triple-gate transistor was first demonstrated in 1987, by a
2192:
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1803:
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2234:
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Hisamoto, D.; Kaga, T.; Kawamoto, Y.; Takeda, E. (December 1989). "A fully depleted lean-channel transistor (DELTA)-a novel vertical ultra thin SOI MOSFET".
2907:
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Dastjerdy, E.; Ghayour, R.; Sarvari, H. (August 2012). "Simulation and analysis of the frequency performance of a new silicon nanowire MOSFET structure".
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than previous transistors. This allows up to 37% higher speed or a power consumption at under 50% of the previous type of transistors used by Intel.
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announced plans to offer a 14-nanometer process technology featuring FinFET three-dimensional transistors in 2014. The next month, the rival company
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Subramanian (5 Dec 2005). "Device and circuit-level analog performance trade-offs: A comparative study of planar bulk FETs versus FinFETs".
2008:
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Wong, H-S.; Chan, K.; Taur, Y. (December 10, 1997). "Self-aligned (Top and bottom) double-gate MOSFET with a 25 nm thick silicon channel".
978:
505:
129:
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2572:"Still Room at the Bottom.(nanometer transistor developed by Yang-kyu Choi from the Korea Advanced Institute of Science and Technology )"
1565:"Still Room at the Bottom.(nanometer transistor developed by Yang-kyu Choi from the Korea Advanced Institute of Science and Technology )"
1520:
3167:
2947:
1423:
532:
316:
1945:
Wong, Hon-Sum (December 1992). "Gate-current injection and surface impact ionization in MOSFET's with a gate induced virtual drain".
1450:; Bokor, J.; King, Tsu-Jae; Anderson, E.; et al. (December 2000). "FinFET-a self-aligned double-gate MOSFET scalable to 20 nm".
3150:
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2887:
2863:
2683:"MBCFET Trademark of Samsung Electronics Co., Ltd. - Registration Number 5495359 - Serial Number 87447776 :: Justia Trademarks"
1962:
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964:
All of the important multi-gate (MG) transistor behavior is captured by this model. Volume inversion is included in the solution of
738:
research team including K. Hieda, Fumio
Horiguchi and H. Watanabe. They realized that the fully depleted (FD) body of a narrow bulk
929:
The primary challenges to integrating nonplanar multigate devices into conventional semiconductor manufacturing processes include:
3290:
3017:
1997:
742:-based transistor helped improve switching due to a lessened body-bias effect. In 1992, a triple-gate MOSFET was demonstrated by
650:
or because a triangular prism has a higher area-to-volume ratio than a rectangular prism, thus increasing switching performance.
516:
124:
1277:"Flexfet: Independently-Double-Gated SOI Transistor With Variable Vt and 0.5V Operation Achieving Near Ideal Subthreshold Slope"
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594:(Taiwan Semiconductor Manufacturing Company). The "Omega FinFET" design is named after the similarity between the Greek letter
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778:
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The first FinFET transistor type was called a "Depleted Lean-channel
Transistor" or "DELTA" transistor, which was first
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demonstrated a "Bulk FinFET" design, which made it possible to mass-produce FinFET devices. They demonstrated dynamic
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61:
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2113:
1322:
494:
862:, later left Toshiba and founded Unisantis Electronics in 2004 to research surrounding-gate technology along with
287:(in its narrow, specific version concerning density scaling, exclusive of its careless historical conflation with
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3162:
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Intel video explaining 3D ("Tri-Gate") chip and transistor design used in 22 nm architecture of Ivy Bridge
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1024:
673:
189:
882:(GAA) FinFET technology. GAAFET transistors may make use of high-k/metal gate materials. GAAFETs with up to 7
827:
are the successor to FinFETs, as they can work at sizes below 7 nm. They were used by IBM to demonstrate
504:(fin field-effect transistor) is a type of non-planar transistor, or "3D" transistor (not to be confused with
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vary from 8 to 50 nanometers in width. The width of the nanosheets is known as Weff, or effective width.
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3618:
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3116:
2826:
2413:
1008:
320:
965:
485:
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Rostami, M.; Mohanram, K. (2011). "Dual-Vth$ Independent-Gate FinFETs for Low Power Logic
Circuits".
378:(VHF) mixers and in sensitive VHF front-end amplifiers. They are available from manufacturers such as
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1985:
1762:"TSMC likely to launch 16 nm FinFET+ process at year-end 2014, and "FinFET Turbo" later in 2015-16"
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676:
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characterized both theoretically and experimentally. They have also been successfully etched onto
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is sometimes used generically to denote any multigate FET with three effective gates or channels.
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FinFETs. They coined the term "FinFET" (fin field-effect transistor) in a December 2000 paper.
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3421:
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2414:"First experimental demonstration of gate-all-around III–V MOSFETs by top-down approach"
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99:
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Lee, Hyunjin; et al. (2006). "Sub-5nm All-Around Gate FinFET for Ultimate Scaling".
2390:
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3688:
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3247:
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Gu, J. J.; Liu, Y. Q.; Wu, Y. Q.; Colby, R.; Gordon, R. G.; Ye, P. D. (December 2011).
2136:
1839:"Samsung and eSilicon Taped Out 14nm Network Processor with Rambus 28G SerDes Solution"
875:
798:
638:
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598:(Ω) and the shape in which the gate wraps around the source/drain structure. It has a
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3708:
3527:
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3322:
2725:"Scaling Down: Intel Boasts RibbonFET and PowerVia as Next IC Design Solution - News"
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1972:
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423:(metal–oxide–semiconductor field-effect transistor) devices, avoiding more stringent
272:
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89:
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1825:"High-performance, high-bandwidth IP platform for Samsung 14LPP process technology"
1671:
1291:
988:
901:
859:
828:
806:
767:
661:
announced start early or "risk" production of 16 nm FinFETs in November 2013.
622:
351:. The primary roadblock to widespread implementation is manufacturability, as both
300:
359:
and patterning. Other complementary strategies for device scaling include channel
355:
and non-planar designs present significant challenges, especially with respect to
17:
2579:
1572:
1129:
Risch, L. "Pushing CMOS Beyond the Roadmap", Proceedings of ESSCIRC, 2005, p. 63.
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3634:
3583:
3489:
3474:
3257:
3219:
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1447:
1034:
1029:
528:
424:
257:(gate-all-around field-effect transistor), which are non-planar transistors, or
2646:"TSMC Plots an Aggressive Course for 3 nm Lithography and Beyond - ExtremeTech"
1598:
805:
two states (again, for performance)." Intel has stated that all products after
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describe their double-gate development efforts as FinFET development, whereas
265:
147:
109:
2355:
1954:
1892:
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IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
1254:
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3397:
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2295:
Novel Compound Semiconductor Nanowires: Materials, Devices, and Applications
1921:
1389:
1090:
958:
883:
575:
556:
544:
291:). Development efforts into multigate transistors have been reported by the
470:
2768:"Samsung's 3-nm Tech Shows Nanosheet Transistor Advantage - IEEE Spectrum"
2172:
2034:"IDF 2011: Intel Looks to Take a Bite Out of ARM, AMD With 3D FinFET Tech"
3949:
3897:
3877:
3855:
3741:
3736:
3624:
3613:
3542:
3312:
2549:
1547:"Intel Announces first 22nm 3D Tri-Gate Transistors, Shipping in 2H 2011"
836:
790:
719:
715:
379:
94:
2932:
2848:
IEEE International Electron Devices Meeting, 2005. IEDM Technical Digest
2750:"Intel to use Nanowire/Nanoribbon Transistors in Volume 'in Five Years'"
2137:"Intel's New Tri-Gate Ivy Bridge Transistors: 9 Things You Need to Know"
3809:
3746:
3568:
3553:
3407:
3364:
3012:
2060:"Intel Releases Ivy Bridge: First Processor with "Tri-Gate" Transistor"
851:
739:
735:
711:
520:
387:
304:
296:
1662:
1481:
957:, is the first standard model for FinFETs. BSIM-CMG is implemented in
562:
In current usage the term FinFET has a less precise definition. Among
3882:
3573:
3537:
3502:
3062:
3034:
3007:
2982:
2797:"Multiple gate field-effect transistors for future CMOS technologies"
1804:"AMD Demonstrates Revolutionary 14nm FinFET Polaris GPU Architecture"
1607:
1045:
629:
Bulk FinFET process. In 2006, a team of Korean researchers from the
501:
479:
463:
453:
420:
269:
250:
2513:
Micro- and Nanoelectronics: Emerging Device Challenges and Solutions
1917:
Micro- and Nanoelectronics: Emerging Device Challenges and Solutions
953:
BSIMCMG106.0.0, officially released on March 1, 2012 by UC Berkeley
850:
A gate-all-around (GAA) MOSFET was first demonstrated in 1988, by a
2782:"Nanosheets: IBM's Path to 5-Nanometer Transistors - IEEE Spectrum"
1591:
2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers
3959:
3870:
3629:
3402:
3195:
3057:
3052:
2429:
2258:
Claeys, C.; Murota, J.; Tao, M.; Iwai, H.; Deleonibus, S. (2015).
1784:"The AMD Radeon RX 480 Preview: Polaris Makes Its Mainstream Mark"
944:
867:
774:
630:
595:
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397:
336:
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29:
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predicted correctly that such devices will be the cornerstone of
3902:
3285:
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3132:
3085:
3023:
1075:
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954:
871:
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to travel. Intel reports that their tri-gate transistors reduce
665:
658:
634:
606:(ps) for the N-type transistor and 0.88 ps for the P-type.
591:
587:
524:
312:
2936:
2707:"Samsung at foundry event talks about 3nm, MBCFET developments"
2193:
Intel to Present on 22-nm Tri-gate Technology at VLSI Symposium
1359:. Springer Science & Business Media. pp. 11 & 39.
419:(layer-by-layer) manufacturing processes to create double-gate
751:
743:
722:
for production of a 14 nm FinFET ASIC in a 2.5D package.
703:
571:
567:
308:
1229:
International Electron Devices Meeting. IEDM Technical Digest
949:
Different FinFET structures, which can be modeled by BSIM-CMG
762:
On April 23, 2012, Intel released a new line of CPUs, termed
2213:"Below 22nm, spacers get unconventional: Interview with ASM"
1986:
High Performance Non-Planar Tri-gate Transistor Architecture
1711:"Globalfoundries looks leapfrog fab rivals with new process"
1275:
Wilson, D.; Hayhurst, R.; Oblea, A.; Parke, S.; Hackler, D.
2235:"Intel's Tri-Gate transistors: everything you need to know"
933:
Fabrication of a thin silicon "fin" tens of nanometers wide
1947:
International Technical Digest on Electron Devices Meeting
1382:
International Technical Digest on Electron Devices Meeting
439:
is a planar, independently double-gated transistor with a
2628:"Where are my GAA-FETs? TSMC to Stay with FinFET for 3nm"
2481:
Technical Digest., International Electron Devices Meeting
936:
Fabrication of matched gates on multiple sides of the fin
415:
A planar double-gate MOSFET (DGMOS) employs conventional
668:
announced that it is nearing implementation of several
555:
process. The following year, they developed the first
547:
FinFETs and successfully fabricated devices down to a
2114:"Transistors go 3D as Intel re-invents the microchip"
2089:"Intel Reinvents Transistors Using New 3-D Structure"
870:(KAIST) and the National Nano Fab Center developed a
633:(KAIST) and the National Nano Fab Center developed a
268:
are one of the several strategies being developed by
2665:"Samsung Announces 3 nm GAA MBCFET PDK, Version 0.1"
3918:
3818:
3785:
3717:
3654:
3582:
3488:
3420:
3266:
3194:
3099:
2981:
2970:
777:for the non-planar transistor architecture used in
699:
16 nm FinFET "Turbo" (estimated in 2015–2016).
586:
A 25 nm transistor operating on just 0.7
249:). The most widely used multi-gate devices are the
27:
MOS field-effect transistor with more than one gate
868:Korea Advanced Institute of Science and Technology
631:Korea Advanced Institute of Science and Technology
1328:Institute of Electrical and Electronics Engineers
866:. In 2006, a team of Korean researchers from the
243:multiple-independent-gate field-effect transistor
234:metal–oxide–semiconductor field-effect transistor
2831:: CS1 maint: DOI inactive as of February 2024 (
1686:"Intel's FinFETs are less fin and more triangle"
493:from 2016, which uses a 16 nm FinFET-based
1158:"Motorola 3N201 Datasheet - Datasheetspdf.com"
2948:
641:device, based on FinFET technology. In 2011,
197:
8:
2292:Ishikawa, Fumitaro; Buyanova, Irina (2017).
1760:Josephine Lien; Steve Shen (31 March 2014).
1736:"TSMC taps ARM's V8 on road to 16 nm FinFET"
2923:Flexfet Transistor (American Semiconductor)
2421:2011 International Electron Devices Meeting
2287:
2285:
1885:1987 International Electron Devices Meeting
1427:. Symposium on VLSI Technology Short Course
759:chip based on this technology at IDF 2009.
2978:
2955:
2941:
2933:
1419:"FinFET: History, Fundamentals and Future"
1279:SOI Conference, 2007 IEEE International
204:
190:
37:
2812:
2428:
2171:
2009:"AMD Details Its Triple-Gate Transistors"
1661:
1606:
1471:
2908:Inverted T-FET (Freescale Semiconductor)
1855:FinFETs and Other Multi-Gate Transistors
1356:FinFETs and Other Multi-Gate Transistors
283:, colloquially referred to as extending
1584:
1582:
1318:"IEEE Andrew S. Grove Award Recipients"
1122:
917:the idle power required by the device.
374:Dual-gate MOSFETs are commonly used in
166:
138:
80:
52:
45:
34:A dual-gate MOSFET and schematic symbol
2824:
2602:"New Transistor Structures At 3nm/2nm"
2108:
2106:
1521:"Intel Silicon Technology Innovations"
1409:
1407:
253:(fin field-effect transistor) and the
2817:(inactive 2024-02-28). Archived from
1860:Springer Science & Business Media
1498:. Amd.com. 2002-09-10. Archived from
1452:IEEE Transactions on Electron Devices
590:was demonstrated in December 2002 by
275:manufacturers to create ever-smaller
7:
3387:Three-dimensional integrated circuit
1182:"3SK45 Datasheet - Alldatasheet.com"
979:Three-dimensional integrated circuit
130:List of semiconductor scale examples
3168:Programmable unijunction transistor
521:Hitachi Central Research Laboratory
428:between the upper and lower gates.
3069:Multi-gate field-effect transistor
2160:"Intel enters the third dimension"
1424:University of California, Berkeley
226:multi-gate field-effect transistor
25:
3047:Insulated-gate bipolar transistor
2918:Tri-Gate transistor (Intel Corp.)
2600:LaPedus, Mark (25 January 2021).
1066:High-electron-mobility transistor
874:transistor, the world's smallest
773:Tri-gate fabrication was used by
637:transistor, the world's smallest
411:Planar double-gate MOSFET (DGMOS)
3291:Heterostructure barrier varactor
3018:Chemical field-effect transistor
1988:; Dr. Gerald Marcyk. Intel, 2002
809:will be based upon this design.
236:(MOSFET) that has more than one
173:
125:Semiconductor device fabrication
3339:Mixed-signal integrated circuit
1004:Extreme ultraviolet lithography
770:chips for low-powered devices.
41:Part of a series of articles on
2578:, 1 April 2006, archived from
2135:Murray, Matthew (4 May 2011).
2011:. Xbitlabs.com. Archived from
1571:, 1 April 2006, archived from
895:Multi-bridge channel (MBC) FET
825:Gate-all-around FETs (GAAFETs)
1:
2890:. UC Berkeley. Archived from
3370:Silicon controlled rectifier
3232:Organic light-emitting diode
3122:Diffused junction transistor
2327:IEEE Electron Device Letters
1019:Very Large Scale Integration
820:Gate-all-around FET (GAAFET)
689:16 nm FinFET (Q4 2014),
3174:Static induction transistor
3111:Bipolar junction transistor
3063:MOS field-effect transistor
3035:Fin field-effect transistor
2399:10.1016/j.physe.2012.07.007
2266:The Electrochemical Society
2036:. DailyTech. Archived from
1523:. Intel.com. Archived from
1144:September 27, 2007, at the
999:Next-generation lithography
349:sub-32 nm technologies
293:Electrotechnical Laboratory
254:
81:Solid-state nanoelectronics
62:Molecular scale electronics
53:Single-molecule electronics
4014:
3381:Static induction thyristor
2423:. pp. 33.2.1–33.2.4.
2261:ULSI Process Integration 9
2233:Dan Grabham (2011-05-06).
2116:. Ars Technica. 5 May 2011
1738:. EE Times. Archived from
1713:. EE Times. Archived from
1688:. EE Times. Archived from
1599:10.1109/VLSIT.2006.1705215
1323:IEEE Andrew S. Grove Award
451:
3550:(Hexode, Heptode, Octode)
3302:Hybrid integrated circuit
3145:Light-emitting transistor
2856:10.1109/IEDM.2005.1609503
2606:Semiconductor Engineering
2439:10.1109/IEDM.2011.6131662
1654:10.1109/TCAD.2010.2097310
746:researcher Hon-Sum Wong.
497:chip manufactured by TSMC
367:-based technologies, and
3597:Backward-wave oscillator
3307:Light emitting capacitor
3163:Point-contact transistor
3133:Junction Gate FET (JFET)
2729:www.allaboutcircuits.com
1955:10.1109/IEDM.1992.307330
1893:10.1109/IEDM.1987.191536
1237:10.1109/IEDM.1997.650416
1025:Neuromorphic engineering
854:research team including
535:research team including
402:Several multigate models
3608:Crossed-field amplifier
3127:Field-effect transistor
2814:10.4103/0256-4602.72582
2510:Brozek, Tomasz (2017).
2489:10.1109/IEDM.1988.32796
2348:10.1109/LED.2006.873381
2199:April 15, 2012, at the
1914:Brozek, Tomasz (2017).
1390:10.1109/IEDM.1989.74182
1071:Field-effect transistor
371:/metal gate materials.
341:Freescale Semiconductor
3777:Voltage-regulator tube
3344:MOS integrated circuit
3209:Constant-current diode
3185:Unijunction transistor
2795:Subramanian V (2010).
2158:Cartwright J. (2011).
1852:Colinge, J.P. (2008).
1353:Colinge, J.P. (2008).
950:
925:Integration challenges
843:, which have a higher
621:) manufactured with a
498:
482:
467:
403:
343:, and others, and the
180:Electronics portal
35:
3846:Electrolytic detector
3619:Inductive output tube
3435:Low-dropout regulator
3350:Organic semiconductor
3281:Printed circuit board
3117:Darlington transistor
2964:Electronic components
2801:IETE Technical Review
2687:trademarks.justia.com
2546:Unisantis Electronics
2173:10.1038/news.2011.274
1806:. AMD. 4 January 2016
1009:Immersion lithography
948:
797:and consume far less
510:short-channel effects
488:
473:
461:
401:
321:Infineon Technologies
33:
3664:Beam deflection tube
3333:Metal oxide varistor
3226:Light-emitting diode
3080:Thin-film transistor
3041:Floating-gate MOSFET
2850:. pp. 898–901.
2483:. pp. 222–225.
1949:. pp. 151–154.
1887:. pp. 736–739.
1527:on September 3, 2011
1384:. pp. 833–836.
1334:on September 9, 2018
1231:. pp. 427–430.
1205:"BF1217WR Datasheet"
1051:Floating-gate MOSFET
1040:Silicon on insulator
984:Semiconductor device
831:process technology.
692:16 nm FinFET+ (
615:random-access memory
365:silicon-on-insulator
67:Molecular logic gate
3640:Traveling-wave tube
3440:Switching regulator
3276:Printed electronics
3253:Step recovery diode
3030:Depletion-load NMOS
2913:Omega FinFET (TSMC)
2650:www.extremetech.com
2552:on 22 February 2007
2391:2012PhyE...45...66D
2340:2006IEDL...27..383S
2058:Miller, Michael J.
1545:Shimpi, Anand Lal.
1464:2000ITED...47.2320H
726:Tri-gate transistor
653:In September 2012,
611:Samsung Electronics
376:very high frequency
333:Samsung Electronics
3945:Crystal oscillator
3805:Variable capacitor
3480:Switched capacitor
3422:Voltage regulators
3296:Integrated circuit
3180:Tetrode transistor
3158:Pentode transistor
3151:Organic LET (OLET)
3138:Organic FET (OFET)
2821:on March 23, 2012.
2582:on 6 November 2012
1924:. pp. 116–7.
1593:. pp. 58–59.
1575:on 6 November 2012
1101:Quantum logic gate
1086:Pentode transistor
1081:Tetrode transistor
1014:Strain engineering
966:Poisson's equation
951:
914:Planar transistors
602:of just 0.39
499:
483:
468:
404:
384:NXP Semiconductors
361:strain engineering
139:Related approaches
36:
18:Trigate transistor
3980:
3979:
3940:Ceramic resonator
3752:Mercury-arc valve
3704:Video camera tube
3656:Cathode-ray tubes
3416:
3415:
3024:Complementary MOS
2754:www.anandtech.com
2748:Cutress, Dr Ian.
2669:www.anandtech.com
2632:www.anandtech.com
2626:Cutress, Dr Ian.
2576:Nanoparticle News
2542:"Company Profile"
2527:978-1-351-83134-5
2448:978-1-4577-0505-2
2309:978-1-315-34072-2
2275:978-1-60768-675-0
2195:(ElectroIQ 2012)
1931:978-1-351-83134-5
1869:978-0-387-71751-7
1618:978-1-4244-0005-8
1569:Nanoparticle News
1551:www.anandtech.com
1482:10.1109/16.887014
1458:(12): 2320–2325.
1417:(June 11, 2012).
1415:Tsu-Jae King, Liu
1366:978-0-387-71751-7
1292:"What is Finfet?"
1246:978-0-7803-4100-5
994:High-Îş dielectric
878:device, based on
864:Tohoku University
845:electron mobility
222:multi-gate MOSFET
214:
213:
16:(Redirected from
4005:
3998:Transistor types
3834:electrical power
3719:Gas-filled tubes
3603:Cavity magnetron
3430:Linear regulator
2979:
2957:
2950:
2943:
2934:
2896:
2895:
2884:
2878:
2877:
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2614:
2612:
2597:
2591:
2590:
2589:
2587:
2568:
2562:
2561:
2559:
2557:
2548:. Archived from
2538:
2532:
2531:
2507:
2501:
2500:
2473:
2467:
2466:
2464:
2463:
2432:
2418:
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2123:
2121:
2110:
2101:
2100:
2098:
2096:
2085:
2079:
2078:
2076:
2075:
2066:. Archived from
2055:
2049:
2048:
2046:
2045:
2030:
2024:
2023:
2021:
2020:
2005:
1999:
1995:
1989:
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1492:
1486:
1485:
1475:
1446:Hisamoto, Digh;
1443:
1437:
1436:
1434:
1432:
1411:
1402:
1401:
1377:
1371:
1370:
1350:
1344:
1343:
1341:
1339:
1330:. Archived from
1314:
1308:
1307:
1305:
1303:
1298:. April 26, 2017
1288:
1282:
1273:
1267:
1266:
1224:
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1215:
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1201:
1195:
1194:
1192:
1191:
1186:
1178:
1172:
1171:
1169:
1168:
1162:Datasheetpdf.com
1154:
1148:
1136:
1130:
1127:
1106:Transistor model
941:Compact modeling
695:
626:
552:
537:Tsu-Jae King Liu
218:multigate device
206:
199:
192:
178:
177:
120:Multigate device
38:
21:
4013:
4012:
4008:
4007:
4006:
4004:
4003:
4002:
3983:
3982:
3981:
3976:
3914:
3829:audio and video
3814:
3781:
3713:
3650:
3578:
3559:Photomultiplier
3484:
3412:
3360:Quantum circuit
3268:
3262:
3204:Avalanche diode
3190:
3102:
3095:
2984:
2973:
2966:
2961:
2904:
2899:
2888:"BSIMCMG Model"
2886:
2885:
2881:
2866:
2845:
2844:
2840:
2823:
2794:
2793:
2789:
2780:
2779:
2775:
2766:
2765:
2761:
2747:
2746:
2742:
2733:
2731:
2723:
2722:
2718:
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2700:
2691:
2689:
2681:
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2662:
2661:
2657:
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2598:
2594:
2585:
2583:
2570:
2569:
2565:
2555:
2553:
2540:
2539:
2535:
2528:
2520:. p. 117.
2509:
2508:
2504:
2475:
2474:
2470:
2461:
2459:
2449:
2416:
2411:
2410:
2406:
2376:
2375:
2371:
2322:
2321:
2317:
2310:
2302:. p. 457.
2291:
2290:
2283:
2276:
2268:. p. 109.
2257:
2256:
2252:
2243:
2241:
2232:
2231:
2227:
2218:
2216:
2211:
2210:
2206:
2201:Wayback Machine
2191:
2187:
2178:
2176:
2157:
2156:
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2133:
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2016:
2007:
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1984:
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1189:
1187:
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1164:
1156:
1155:
1151:
1146:Wayback Machine
1137:
1133:
1128:
1124:
1120:
1115:
1096:Quantum circuit
974:
943:
927:
911:
897:
880:gate-all-around
822:
728:
710:In March 2017,
693:
664:In March 2014,
655:GlobalFoundries
643:Rice University
624:
566:manufacturers,
550:
491:NVIDIA GTX 1070
456:
450:
434:
413:
396:
289:Dennard scaling
277:microprocessors
210:
172:
162:
134:
100:Nanolithography
76:
72:Molecular wires
47:Nanoelectronics
28:
23:
22:
15:
12:
11:
5:
4011:
4009:
4001:
4000:
3995:
3985:
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3937:
3936:
3935:
3924:
3922:
3916:
3915:
3913:
3912:
3911:
3910:
3908:Wollaston wire
3900:
3895:
3890:
3885:
3880:
3875:
3874:
3873:
3868:
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3848:
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3739:
3734:
3729:
3723:
3721:
3715:
3714:
3712:
3711:
3706:
3701:
3696:
3691:
3689:Selectron tube
3686:
3681:
3679:Magic eye tube
3676:
3671:
3666:
3660:
3658:
3652:
3651:
3649:
3648:
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3288:
3283:
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3255:
3250:
3248:Schottky diode
3245:
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3229:
3223:
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3206:
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2915:
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2903:
2902:External links
2900:
2898:
2897:
2894:on 2012-07-21.
2879:
2864:
2838:
2807:(6): 446–454.
2787:
2773:
2759:
2740:
2716:
2711:techxplore.com
2698:
2674:
2663:Cutress, Ian.
2655:
2637:
2618:
2592:
2563:
2533:
2526:
2502:
2477:Masuoka, Fujio
2468:
2447:
2404:
2369:
2334:(5): 383–386.
2315:
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2102:
2080:
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1990:
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1906:
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1862:. p. 12.
1844:
1830:
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1795:
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1727:
1702:
1677:
1648:(3): 337–349.
1632:
1617:
1578:
1556:
1537:
1512:
1496:"AMD Newsroom"
1487:
1473:10.1.1.211.204
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893:
876:nanoelectronic
847:than silicon.
821:
818:
727:
724:
718:announced the
701:
700:
697:
690:
639:nanoelectronic
564:microprocessor
462:A double-gate
452:Main article:
449:
446:
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259:3D transistors
232:) refers to a
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6:
4:
3:
2:
4010:
3999:
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3990:
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3970:mercury relay
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3793:Potentiometer
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3709:Williams tube
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3528:Fleming valve
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3355:Photodetector
3353:
3351:
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3329:
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3324:
3323:Memtransistor
3321:
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2972:Semiconductor
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2865:0-7803-9268-X
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2154:
2151:
2139:. PC Magazine
2138:
2131:
2128:
2115:
2109:
2107:
2103:
2090:
2084:
2081:
2070:on 2019-12-28
2069:
2065:
2061:
2054:
2051:
2040:on 2014-03-10
2039:
2035:
2029:
2026:
2015:on 2014-03-10
2014:
2010:
2004:
2001:
1998:
1994:
1991:
1987:
1982:
1979:
1974:
1970:
1966:
1964:0-7803-0817-4
1960:
1956:
1952:
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1919:
1918:
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1898:
1894:
1890:
1886:
1879:
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1856:
1848:
1845:
1841:. 2017-03-22.
1840:
1834:
1831:
1827:. 2017-03-22.
1826:
1820:
1817:
1805:
1799:
1796:
1785:
1782:Smith, Ryan.
1778:
1775:
1763:
1756:
1753:
1742:on 2012-11-01
1741:
1737:
1731:
1728:
1717:on 2013-02-02
1716:
1712:
1706:
1703:
1692:on 2013-05-31
1691:
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1516:
1513:
1502:on 2010-05-13
1501:
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1297:
1296:Computer Hope
1293:
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962:
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922:
918:
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909:Industry need
908:
906:
903:
894:
892:
888:
885:
881:
877:
873:
869:
865:
861:
857:
856:Fujio Masuoka
853:
848:
846:
842:
838:
832:
830:
826:
819:
817:
815:
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808:
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721:
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680:manufacturing
678:
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584:
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569:
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560:
558:
554:
546:
542:
541:Jeffrey Bokor
538:
534:
530:
526:
522:
518:
513:
511:
507:
506:3D microchips
503:
496:
492:
487:
481:
477:
472:
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455:
447:
445:
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431:
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274:
273:semiconductor
271:
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207:
202:
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193:
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176:
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170:
165:
159:
158:Nanomechanics
156:
154:
153:Nanophotonics
151:
149:
146:
145:
143:
142:
137:
131:
128:
126:
123:
121:
118:
116:
113:
111:
108:
106:
103:
101:
98:
96:
93:
91:
90:Nanocircuitry
88:
87:
85:
84:
79:
73:
70:
68:
65:
63:
60:
59:
57:
56:
51:
48:
44:
40:
39:
32:
19:
3727:Cold cathode
3694:Storage tube
3584:Vacuum tubes
3533:Neutron tube
3508:Beam tetrode
3490:Vacuum tubes
3075:Power MOSFET
3068:
2892:the original
2882:
2847:
2841:
2827:cite journal
2819:the original
2804:
2800:
2790:
2776:
2762:
2753:
2743:
2732:. Retrieved
2728:
2719:
2710:
2701:
2690:. Retrieved
2686:
2677:
2668:
2658:
2649:
2640:
2631:
2621:
2609:. Retrieved
2605:
2595:
2584:, retrieved
2580:the original
2575:
2566:
2554:. Retrieved
2550:the original
2545:
2536:
2512:
2505:
2480:
2471:
2460:. Retrieved
2420:
2407:
2382:
2378:
2372:
2331:
2325:
2318:
2294:
2260:
2253:
2242:. Retrieved
2238:
2228:
2217:. Retrieved
2207:
2188:
2177:. Retrieved
2163:
2153:
2141:. Retrieved
2130:
2118:. Retrieved
2093:. Retrieved
2083:
2072:. Retrieved
2068:the original
2063:
2053:
2042:. Retrieved
2038:the original
2028:
2017:. Retrieved
2013:the original
2003:
1993:
1981:
1946:
1940:
1916:
1909:
1884:
1878:
1854:
1847:
1833:
1819:
1808:. Retrieved
1798:
1787:. Retrieved
1777:
1766:. Retrieved
1755:
1744:. Retrieved
1740:the original
1730:
1719:. Retrieved
1715:the original
1705:
1694:. Retrieved
1690:the original
1680:
1645:
1641:
1635:
1590:
1573:the original
1568:
1559:
1550:
1540:
1529:. Retrieved
1525:the original
1515:
1504:. Retrieved
1500:the original
1490:
1455:
1451:
1448:Hu, Chenming
1441:
1429:. Retrieved
1422:
1381:
1375:
1355:
1348:
1336:. Retrieved
1332:the original
1321:
1312:
1300:. Retrieved
1295:
1286:
1271:
1228:
1222:
1211:. Retrieved
1199:
1188:. Retrieved
1176:
1165:. Retrieved
1161:
1152:
1134:
1125:
989:Clock gating
963:
952:
928:
919:
912:
898:
889:
860:flash memory
849:
833:
824:
823:
813:
811:
807:Sandy Bridge
803:
772:
761:
748:
731:
729:
709:
702:
663:
652:
648:
608:
585:
561:
514:
500:
436:
435:
414:
405:
373:
301:Grenoble INP
281:memory cells
263:
258:
246:
242:
229:
225:
221:
217:
215:
119:
3893:Transformer
3635:Sutton tube
3475:Charge pump
3328:Memory cell
3258:Zener diode
3220:Laser diode
3103:transistors
2985:transistors
2611:23 December
2215:. ELECTROIQ
2064:PC Magazine
1764:. DIGITIMES
1035:3D printing
1030:Bit slicing
533:UC Berkeley
529:Chenming Hu
425:lithography
357:lithography
317:UC Berkeley
285:Moore's law
266:transistors
264:Multi-gate
115:Moore's law
3987:Categories
3965:reed relay
3955:Parametron
3888:Thermistor
3866:resettable
3825:Connector
3786:Adjustable
3762:Nixie tube
3732:Crossatron
3699:Trochotron
3674:Iconoscope
3669:Charactron
3646:X-ray tube
3518:Compactron
3498:Acorn tube
3455:Buck–boost
3376:Solaristor
3238:Photodiode
3215:Gunn diode
3211:(CLD, CRD)
2993:Transistor
2734:2022-09-14
2692:2020-01-16
2462:2015-05-10
2244:2022-01-21
2219:2011-05-04
2179:2015-05-10
2074:2012-04-23
2044:2014-03-10
2019:2014-03-10
1810:2016-01-04
1789:2018-06-03
1768:2014-03-31
1746:2014-03-10
1721:2014-03-10
1696:2014-03-10
1663:1911/72088
1531:2014-03-10
1506:2015-07-07
1213:2023-01-08
1190:2023-01-08
1167:2023-01-08
1118:References
1111:Die shrink
1056:Transistor
955:BSIM Group
884:nanosheets
779:Ivy Bridge
764:Ivy Bridge
604:picosecond
600:gate delay
517:fabricated
148:Nanoionics
110:Nanosensor
3928:Capacitor
3772:Trigatron
3767:Thyratron
3757:Neon lamp
3684:Monoscope
3564:Phototube
3548:Pentagrid
3513:Barretter
3398:Trancitor
3393:Thyristor
3318:Memristor
3243:PIN diode
3020:(ChemFET)
2518:CRC Press
2497:114148274
2430:1112.3573
2385:: 66–71.
2379:Physica E
2356:0741-3106
2300:CRC Press
2239:TechRadar
1973:114058374
1922:CRC Press
1608:10203/698
1468:CiteSeerX
1398:114072236
1255:0163-1918
1091:Memristor
959:Verilog-A
872:3 nm
837:nanowires
812:The term
791:electrons
696:Q4 2014),
683:processes
635:3 nm
609:In 2004,
576:Freescale
557:P-channel
545:N-channel
441:damascene
95:Nanowires
3950:Inductor
3920:Reactive
3898:Varistor
3878:Resistor
3856:Antifuse
3742:Ignitron
3737:Dekatron
3625:Klystron
3614:Gyrotron
3543:Nuvistor
3460:Split-pi
3346:(MOS IC)
3313:Memistor
3071:(MuGFET)
3065:(MOSFET)
3037:(FinFET)
2874:32683938
2364:45576648
2197:Archived
1901:34381025
1627:26482358
1263:20947344
1142:Archived
1139:Table39b
972:See also
814:tri-gate
732:tri-gate
716:eSilicon
672:FinFETs
380:Motorola
3993:MOSFETs
3851:Ferrite
3819:Passive
3810:Varicap
3798:digital
3747:Krytron
3569:Tetrode
3554:Pentode
3408:Varicap
3389:(3D IC)
3365:RF CMOS
3269:devices
3043:(FGMOS)
2974:devices
2586:17 July
2556:17 July
2457:2116042
2387:Bibcode
2336:Bibcode
2095:5 April
2091:. Intel
1672:2225579
1460:Bibcode
852:Toshiba
795:leakage
787:Skylake
783:Haswell
736:Toshiba
720:tapeout
712:Samsung
478:FinFET
437:FlexFET
432:FlexFET
388:Hitachi
305:Hitachi
297:Toshiba
167:Portals
3883:Switch
3574:Triode
3538:Nonode
3503:Audion
3383:(SITh)
3267:Other
3234:(OLED)
3196:Diodes
3147:(LET)
3129:(FET)
3101:Other
3049:(IGBT)
3026:(CMOS)
3013:BioFET
3008:BiCMOS
2872:
2862:
2524:
2495:
2455:
2445:
2362:
2354:
2306:
2272:
2164:Nature
1971:
1961:
1928:
1899:
1866:
1670:
1625:
1615:
1470:
1431:9 July
1396:
1363:
1338:4 July
1302:4 July
1261:
1253:
1243:
1046:MOSFET
1021:(VLSI)
841:InGaAs
677:wafers
674:die-on
625:
574:, and
551:
531:and a
502:FinFET
495:Pascal
480:MOSFET
466:device
464:FinFET
454:FinFET
448:FinFET
421:MOSFET
417:planar
386:, and
369:high-Îş
353:planar
255:GAAFET
251:FinFET
247:MIGFET
230:MuGFET
3960:Relay
3933:types
3871:eFUSE
3642:(TWT)
3630:Maser
3621:(IOT)
3610:(CFA)
3599:(BWO)
3523:Diode
3470:SEPIC
3450:Boost
3403:TRIAC
3372:(SCR)
3335:(MOV)
3309:(LEC)
3228:(LED)
3187:(UJT)
3176:(SIT)
3170:(PUT)
3113:(BJT)
3082:(TFT)
3058:LDMOS
3053:ISFET
2870:S2CID
2493:S2CID
2453:S2CID
2425:arXiv
2417:(PDF)
2360:S2CID
2143:7 May
2120:7 May
1969:S2CID
1897:S2CID
1668:S2CID
1623:S2CID
1394:S2CID
1259:S2CID
1208:(PDF)
1185:(PDF)
1042:(SOI)
799:power
775:Intel
670:16 nm
596:omega
580:Intel
394:Types
337:KAIST
325:Intel
3903:Wire
3861:Fuse
3445:Buck
3298:(IC)
3286:DIAC
3222:(LD)
3091:UMOS
3086:VMOS
3003:PMOS
2998:NMOS
2983:MOS
2860:ISBN
2833:link
2613:2022
2588:2019
2558:2019
2522:ISBN
2443:ISBN
2352:ISSN
2304:ISBN
2270:ISBN
2145:2011
2122:2011
2097:2011
1959:ISBN
1926:ISBN
1864:ISBN
1613:ISBN
1433:2019
1361:ISBN
1340:2019
1304:2019
1251:ISSN
1241:ISBN
1076:JFET
1061:BSIM
902:3 nm
829:5 nm
785:and
768:Atom
757:SRAM
714:and
666:TSMC
659:TSMC
619:DRAM
592:TSMC
588:volt
525:TSMC
489:The
345:ITRS
313:TSMC
279:and
238:gate
105:NEMS
3465:Ćuk
2852:doi
2809:doi
2485:doi
2435:doi
2395:doi
2344:doi
2168:doi
1951:doi
1889:doi
1658:hdl
1650:doi
1603:hdl
1595:doi
1478:doi
1386:doi
1233:doi
839:of
752:AMD
744:IBM
704:AMD
694:cca
572:IBM
568:AMD
527:'s
519:by
476:SOI
474:An
329:AMD
309:IBM
270:MOS
224:or
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3839:RF
3588:RF
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