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The JNT uses a simple nanowire of silicon surrounded by an electrically isolated "wedding ring" that acts to gate the flow of electrons through the wire. This method has been described as akin to squeezing a garden hose to gate the flow of water through the hose. The nanowire is heavily n-doped, making it an excellent conductor. Crucially the gate, comprising silicon, is heavily p-doped; and its presence depletes the underlying silicon nanowire thereby preventing carrier flow past the gate.
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has a gate junction, although its gate is electrically insulated from the controlled region.) Junctions are difficult to fabricate, and, because they are a significant source of current leakage, they waste significant power and heat. Eliminating them held the promise of cheaper and denser microchips.
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Kranti, A.; Yan, R.; Lee, C. -W.; Ferain, I.; Yu, R.; Dehdashti
Akhavan, N.; Razavi, P.; Colinge, J. P. (2010). "Junctionless nanowire transistor (JNT): Properties and design guidelines".
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Colinge, J. P.; Kranti, A.; Yan, R.; Lee, C. W.; Ferain, I.; Yu, R.; Dehdashti
Akhavan, N.; Razavi, P. (2011). "Junctionless Nanowire Transistor (JNT): Properties and design guidelines".
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A Junction-Less
Vertical Nano-Wire FET (JLVNFET) manufacturing process was developed in Laboratory for Analysis and Architecture of Systems (LAAS).
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The JNT uses bulk conduction instead of surface channel conduction. The current drive is controlled by doping concentration and not by
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Larrieu, Guilhem; Han, X.-L. (2013). "Vertical nanowire array-based field effect transistors for ultimate scaling".
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Thus the device is turned off not by reverse bias voltage applied to the gate, as in the case of conventional
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but by full depletion of the channel. This depletion is caused due to work-function difference (
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Yu, Ran (2013). "Junctionless nanowire transistor fabricated with high mobility Ge channel".
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2010 Proceedings of the
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Junctionless
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Multiple JLNT devices were manufactured in various labs:
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Germanium has been used instead of silicon nanowires.
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